CN204067419U - The package structure for LED of high-cooling property - Google Patents
The package structure for LED of high-cooling property Download PDFInfo
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- CN204067419U CN204067419U CN201420379732.1U CN201420379732U CN204067419U CN 204067419 U CN204067419 U CN 204067419U CN 201420379732 U CN201420379732 U CN 201420379732U CN 204067419 U CN204067419 U CN 204067419U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9212—Sequential connecting processes
- H01L2224/92142—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92144—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
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Abstract
A kind of package structure for LED of high-cooling property, it comprises a P type substrate, one light-emitting diode and one first conductive layer, this P type substrate comprises the first through hole that a N-type doped region and is formed at this N-type doped region, Zener diode is formed between this N-type doped region and this P type substrate, this light-emitting diode comprises a pair should the positive pole of the first through hole and a negative pole be connected with this P type electrical property of substrate, and this light-emitting diode is fixedly installed on this P type substrate side and covers this first through hole, this first conductive layer is arranged at this first through hole inner edge and is electrically connected with this positive pole.Because the first conductive layer in this first through hole is directly connected in this light-emitting diode, not only save the setting of wire, and directly can dispel the heat with this P type substrate, and then improving radiating effect.
Description
Technical field
The utility model relates to a kind of encapsulating structure, particularly relates to a kind of package structure for LED of high-cooling property.
Background technology
Light-emitting diode (Light Emitting Diode, LED) be that one sends monochromatic semiconductor light-emitting elements by electronics is combined with electric hole, the wavelength of its light sent and color with its semiconductor material kind adopted and the element impurity of mixing relevant, such as, adopt the light-emitting diode of GaAs (GaAs) that infrared ray or ruddiness can only be sent.
The bulb used with tradition is compared with fluorescent lamp, the luminous efficiency of light-emitting diode is better, the life-span is longer, not cracky and high reliability, therefore light-emitting diode also replaces conventional bulb gradually, becomes illumination light-emitting, even the light emitting source main flow of display backlight plate.
But light-emitting diode also faces some problems to be broken through in use.Light-emitting diode electric energy converts the energy conversion efficiency of luminous energy to, can by the impact of hot environment rapid decline, not only wastes power, light-emitting diode itself also can produce more heat and make temperature increase further, and then cause vicious circle, the life-span of light-emitting diode is declined.Moreover the specified reverse breakdown voltage value of light-emitting diode is general lower, therefore adds that a little reverse voltage just may cause the damage of light-emitting diode, therefore, in order to address this problem, generally light-emitting diode and pressurizer can be electrically connected, prevent light-emitting diode impaired by this.
The pressurizer the most often used is at present Zener diode, utilizes the characteristic of Zener diode, connects with light-emitting diode with Zener diode, can prevent light-emitting diode from suffering to cause during reverse voltage impaired.
No. I427817th, TaiWan, China patent announcement discloses a kind of package structure for LED and preparation method thereof, it comprises the upper substrate that has an installing hole, one to be arranged in this installing hole and to have the light-emitting diode of at least one pair of through hole, one infrabasal plate be connected with this upper substrate, multiplely be arranged at the first electrode between this first substrate with this second substrate and multiple Zener diode be arranged between this first substrate and this corresponding electrode, those Zener diodes utilize the mode of doping to be arranged on this first substrate, get rid of the restriction in shape that can cause when Zener diode is arranged by this, and be used in the mode of filled conductive material in this through hole, increase the thermal diffusivity of light-emitting diode.
Although solve the restriction of Zener diode on arranging in this case, and promote the thermal diffusivity of light-emitting diode, only this case just must can complete preparation by two substrates, and complicated preparation process and comparatively complicated structure still can cause the rising of cost of manufacture.
Utility model content
The utility model main purpose, is the thermal diffusivity promoting package structure for LED.
Another object of the utility model, is to reduce cost needed for LED package.
For reaching above-mentioned purpose, the utility model provides a kind of package structure for LED of high-cooling property, and it comprises:
One P type substrate, this P type substrate comprises a N-type doped region, and one is formed at this N-type doped region and the first through hole of this P type substrate through, forms Zener diode between this N-type doped region and this P type substrate;
One is fixedly installed on this P type substrate side and covers the light-emitting diode of this first through hole, and this light-emitting diode comprises a pair should the positive pole of the first through hole and a negative pole be connected with this P type electrical property of substrate; And
One is arranged at this first through hole inner edge and the first conductive layer be electrically connected with the positive pole of this light-emitting diode.
The package structure for LED of above-mentioned high-cooling property, wherein the material of this first conductive layer is selected from nickel, titanium, gold or aluminium.
The package structure for LED of above-mentioned high-cooling property, wherein more comprises one and is filled in the first conductive filler layer in this first through hole.
The package structure for LED of above-mentioned high-cooling property, wherein the material of this first conductive filler layer is selected from copper, silver or aluminium.
The package structure for LED of above-mentioned high-cooling property, wherein more comprise one second conductive layer, and this P type substrate more comprise a pair should second through hole of negative pole of light-emitting diode, this second conductive layer is arranged at the inner edge of this second through hole and is electrically connected with this negative pole.
The package structure for LED of above-mentioned high-cooling property, wherein the material of this second conductive layer is selected from nickel, titanium, gold or aluminium.
The package structure for LED of above-mentioned high-cooling property, wherein more comprises one and is filled in the second conductive filler layer in this second through hole.
The package structure for LED of above-mentioned high-cooling property, wherein the material of this second conductive filler layer is selected from copper, silver or aluminium.
The package structure for LED of above-mentioned high-cooling property, wherein more comprises a reflector and be arranged between this P type substrate and this light-emitting diode and is arranged at associated layer between this reflector and this light-emitting diode.
In sum, the utility model has features:
One, form this N-type doped region owing to directly adulterating on this P type substrate, direct this Zener diode formed on this P type substrate in order to voltage stabilizing, directly dispels the heat by this P type substrate, and then promotes the thermal diffusivity of this package structure for LED by this.
Two, the positive pole of this light-emitting diode is directly electrically connected with the first conductive layer be arranged in this first through hole, this light-emitting diode directly can be dispelled the heat by this first through hole, and then promote the thermal diffusivity of this package structure for LED.
Three, be fixedly installed on this P type substrate by this light-emitting diode, cost required when making can be reduced further.
Below in conjunction with the drawings and specific embodiments, the utility model is described in detail, but not as to restriction of the present utility model.
Accompanying drawing explanation
Fig. 1 is structure cross-sectional schematic of the present utility model;
Fig. 2 is P type substrate plan structure schematic diagram of the present utility model.
Embodiment
Relevant detailed description of the present utility model and technology contents, the existing accompanying drawing that just coordinates is described as follows:
Refer to shown in Fig. 1 and Fig. 2, the utility model provides a kind of package structure for LED of high-cooling property, it comprises a P type substrate 10, one light-emitting diode 20, one first conductive layer 30, one reflector 40 and an associated layer 50, this reflector 40 is arranged at the side of this P type substrate 10, and this associated layer 50 is arranged at the side of this reflector 40 away from this P type substrate 10, this P type substrate 10 comprises a N-type doped region 11 and and is formed at this N-type doped region 11 and this P type substrate 10 through, first through hole 12 of this reflector 40 and this associated layer 50, and form Zener diode between this N-type doped region 11 and this P type substrate 10, this light-emitting diode 20 comprises a pair should the positive pole 21 and one and the negative pole 22 that is electrically connected of this P type substrate 10 of the first through hole 12, and this light-emitting diode 20 is fixedly installed on this P type substrate 10 by this associated layer 50 and covers this first through hole 12, and this first conductive layer 30 is arranged at this first through hole 12 inner edge and be electrically connected to each other with the positive pole 21 of this light-emitting diode 20.This light-emitting diode 20 is fixedly installed on this P type substrate 10 by this associated layer 50, and the positive pole 21 of this light-emitting diode 20 is electrically connected with the first conductive layer 30 be covered in this first through hole 12, can reach the encapsulating structure arranged without wire by this; And this light-emitting diode 20 can directly dispel the heat with this first through hole 12 by this P type substrate 10, improves the thermal diffusivity of this package structure for LED further.
In order to further heat radiation, this package structure for LED more comprises one second conductive layer 31, this P type substrate 10 more comprises a pair should second through hole 13 of negative pole 22 of light-emitting diode 20, this second conductive layer 31 is arranged at the inner edge of this second through hole 13 and is covered on this negative pole 22, and this second conductive layer 31 is electrically connected with this negative pole 22; In addition, this first conductive layer 30 is identical with the material of this second conductive layer 31, and can be nickel, titanium, gold or aluminium.
Illustrate further, this package structure for LED more comprises a first conductive filler layer 60 and be filled in this first through hole 12 and is filled in the second conductive filler layer 61 in this second through hole 12, and this first conductive filler layer 60 is copper, silver or aluminium with the material of this second conductive filler layer 61.
In addition, the manufacture method of this package structure for LED, first prepare this P type substrate 10, this P type substrate 10 carries out adulterating being formed this N-type doped region 11 use form this Zener diode between this N-type doped region 11 and this P type substrate 10, after sequentially on this P type substrate 10, form this reflector 40 and this associated layer 50, and formation runs through this P type substrate 10 in this N-type doped region 11, first through hole 12 of this reflector 40 and this associated layer 50 and run through this P type substrate 10 outside this N-type doped region 11, this second through hole 13 of this reflector 40 and this associated layer 50, continuing is fixedly installed on this P type substrate 10 by this light-emitting diode 20, and make this first through hole 12 and this second through hole 13 respectively to should the positive pole 21 of light-emitting diode 20 and negative pole 22, continue in the mode of sputter respectively at being formed in this first through hole 12 and this second through hole 13 and this first conductive layer 30 that this positive pole 21 is electrically connected and this second conductive layer 31 of being electrically connected with this negative pole 22, finally insert this first conductive filler layer 60 and this second conductive filler layer 61 with plating mode respectively in this first through hole 12 and this second through hole 13, complete the making of the package structure for LED of this high-cooling property.
In sum, the utility model has features:
One, form this N-type doped region owing to directly adulterating on this P type substrate, direct this Zener diode formed on this P type substrate in order to voltage stabilizing, directly dispels the heat by this P type substrate, and then promotes the thermal diffusivity of this package structure for LED by this.
Two, the positive pole of this light-emitting diode and negative pole are electrically connected with the first conductive layer be arranged in this first through hole and the second conductive layer be arranged in this second through hole respectively, this light-emitting diode directly can be dispelled the heat by this first through hole and this second through hole, and then promote the thermal diffusivity of this package structure for LED.
Three, this package structure for LED be first to have this N-type doped region, this P type substrate of this first through hole and this second through hole is fixedly connected with this light-emitting diode, continue with sputtering way this first through hole with form this first conductive layer and this second conductive layer of being connected with this light-emitting diode in this second through hole, simplify the manufacturing process of light-emitting diode by this, and then the cost needed for reducing.
Certainly; the utility model also can have other various embodiments; when not deviating from the utility model spirit and essence thereof; those of ordinary skill in the art are when making various corresponding change and distortion according to the utility model, but these change accordingly and are out of shape the protection range that all should belong to the claim appended by the utility model.
Claims (9)
1. a package structure for LED for high-cooling property, is characterized in that, comprises:
One P type substrate, this P type substrate comprises a N-type doped region, and one is formed at this N-type doped region and the first through hole of this P type substrate through, forms Zener diode between this N-type doped region and this P type substrate;
One is fixedly installed on this P type substrate side and covers the light-emitting diode of this first through hole, and this light-emitting diode comprises a pair should the positive pole of the first through hole and a negative pole be connected with this P type electrical property of substrate; And
One is arranged at this first through hole inner edge and the first conductive layer be electrically connected with the positive pole of this light-emitting diode.
2. the package structure for LED of high-cooling property according to claim 1, is characterized in that, the material of this first conductive layer is selected from nickel, titanium, gold or aluminium.
3. the package structure for LED of high-cooling property according to claim 1, is characterized in that, more comprises one and is filled in the first conductive filler layer in this first through hole.
4. the package structure for LED of high-cooling property according to claim 3, is characterized in that, the material of this first conductive filler layer is selected from copper, silver or aluminium.
5. the package structure for LED of high-cooling property according to claim 1, it is characterized in that, more comprise one second conductive layer, and this P type substrate more comprise a pair should second through hole of negative pole of light-emitting diode, this second conductive layer is arranged at the inner edge of this second through hole and is electrically connected with this negative pole.
6. the package structure for LED of high-cooling property according to claim 5, is characterized in that, the material of this second conductive layer is selected from nickel, titanium, gold or aluminium.
7. the package structure for LED of high-cooling property according to claim 5, is characterized in that, more comprises one and is filled in the second conductive filler layer in this second through hole.
8. the package structure for LED of high-cooling property according to claim 7, is characterized in that, the material of this second conductive filler layer is selected from copper, silver or aluminium.
9. the package structure for LED of high-cooling property according to claim 1, it is characterized in that, more comprise a reflector and be arranged between this P type substrate and this light-emitting diode and be arranged at associated layer between this reflector and this light-emitting diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420379732.1U CN204067419U (en) | 2014-07-10 | 2014-07-10 | The package structure for LED of high-cooling property |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420379732.1U CN204067419U (en) | 2014-07-10 | 2014-07-10 | The package structure for LED of high-cooling property |
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| Publication Number | Publication Date |
|---|---|
| CN204067419U true CN204067419U (en) | 2014-12-31 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420379732.1U Expired - Fee Related CN204067419U (en) | 2014-07-10 | 2014-07-10 | The package structure for LED of high-cooling property |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113130730A (en) * | 2020-01-16 | 2021-07-16 | 深圳市聚飞光电股份有限公司 | Light emitting device packaging method and light emitting device |
-
2014
- 2014-07-10 CN CN201420379732.1U patent/CN204067419U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113130730A (en) * | 2020-01-16 | 2021-07-16 | 深圳市聚飞光电股份有限公司 | Light emitting device packaging method and light emitting device |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141231 Termination date: 20160710 |