CN101604715A - Gallium nitride LED chip and preparation method thereof - Google Patents
Gallium nitride LED chip and preparation method thereof Download PDFInfo
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- CN101604715A CN101604715A CNA2008101115897A CN200810111589A CN101604715A CN 101604715 A CN101604715 A CN 101604715A CN A2008101115897 A CNA2008101115897 A CN A2008101115897A CN 200810111589 A CN200810111589 A CN 200810111589A CN 101604715 A CN101604715 A CN 101604715A
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Abstract
The present invention discloses a kind of gallium nitride LED chip, comprise Sapphire Substrate, n type gallium nitride, active area, P type gallium nitride, transparency conducting layer from the bottom up successively, be formed on the P electrode on the transparency conducting layer, and be formed on the lip-deep N electrode that n type gallium nitride exposes, wherein, the fringe region of described P type gallium nitride is not covered by transparency conducting layer, and this fringe region that is not covered by transparency conducting layer is a Cutting Road.The present invention also discloses a kind of manufacture method of gallium nitride LED chip, may further comprise the steps: the surface alignment at the P of epitaxial wafer type gallium nitride goes out to need etched zone; Etching should the zone, until exposing n type gallium nitride; Make transparency conducting layer on the surface of P type gallium nitride, but the fringe region that exposes P type gallium nitride is as Cutting Road; On transparency conducting layer, make the P electrode, and on the n type gallium nitride that exposes, make the N electrode, to form light-emitting diode chip for backlight unit; Epitaxial wafer is cut into a plurality of chips.
Description
Technical field
The invention belongs to technical field of semiconductors, particularly a kind of gallium nitride LED chip and preparation method thereof.
Background technology
Good characteristics such as gallium nitride (GaN) based light-emitting diode (LED) has that volume is little, resistance to impact good, reliability is high, response speed is fast, energy-conservation, environmental protection, thus its use will be more and more widely.But the luminous efficiency of gallium nitride based light emitting diode is also lower at present, therefore uses at current its and also is subjected to certain limitation.
Fig. 1 is the structural representation of gallium nitride based LED epitaxial slice.As shown in Figure 1, the structure of this epitaxial wafer is followed successively by from the bottom up: Sapphire Substrate 1, n type gallium nitride 2, active area 3, and P type gallium nitride 4.Because Sapphire Substrate 1 is insulating material, therefore P electrode and N electrode can't be produced on the upper and lower surface of Sapphire Substrate 1, can only make P electrode and N electrode with one side.Shown in Fig. 2,3, on P type gallium nitride 4, transparency conducting layer 5 is set, on transparency conducting layer 5, make P electrode 6.And in order to make the N electrode, prior art is the down dry ecthing of part surface zone from P type gallium nitride 4, to expose n type gallium nitride 2, makes N electrode 7 then on these n type gallium nitride that exposes 2 surfaces.Etching when need making N electrode 7 regional, simultaneously also from the down dry ecthing of edge of P type gallium nitride 4, to form Cutting Road, as shown in Figure 3, this Cutting Road is formed on the edge of this n type gallium nitride that exposes 2, and the epitaxial wafer that is used for will finishing in the later stage chip manufacturing is divided into a plurality of independently chips.When forming this Cutting Road, the active area at epitaxial wafer edge (being PN junction) loses owing to etched, thereby can not get effective utilization, thereby has reduced the luminous efficiency of light-emitting diode chip for backlight unit.
Summary of the invention
In view of this, main purpose of the present invention is to provide a kind of gallium nitride LED chip and preparation method thereof, keeping more PN junction zone, thereby improves the luminous efficiency of light-emitting diode chip for backlight unit.
For achieving the above object, technical scheme of the present invention is achieved in that
A kind of gallium nitride LED chip, comprise Sapphire Substrate, n type gallium nitride, active area, P type gallium nitride, transparency conducting layer from the bottom up successively, be formed on the P electrode on the transparency conducting layer, and be formed on the lip-deep N electrode that n type gallium nitride exposes, wherein, the fringe region of P type gallium nitride is not covered by transparency conducting layer, and this fringe region that is not covered by transparency conducting layer is a Cutting Road.
A kind of manufacture method of gallium nitride LED chip may further comprise the steps successively:
A) provide gallium nitride based LED epitaxial slice, the structure of epitaxial wafer is followed successively by from the bottom up: Sapphire Substrate, n type gallium nitride, active area, and P type gallium nitride, surface alignment at the P of described epitaxial wafer type gallium nitride goes out to need etched zone, and also cooks up the crystal grain of the unsegregated pre-making chip of a plurality of one;
B) from the P type gallium nitride surface of each crystal grain need etched zone of etching step described in a) down, until exposing n type gallium nitride;
C) make transparency conducting layer on the surface of the not etched P type of each crystal grain gallium nitride, the surface area of the surface area ratio P type gallium nitride of this transparency conducting layer is little, with the fringe region that exposes P type gallium nitride as Cutting Road;
D) on the transparency conducting layer of each crystal grain, make the P electrode, and on the n type gallium nitride that exposes of each crystal grain, make the N electrode, to form light-emitting diode chip for backlight unit;
E) fringe region with the P type gallium nitride of unsegregated chip chamber is that Cutting Road cuts into a plurality of chips with epitaxial wafer, and each chip includes a pair of P electrode and N electrode.
Preferably, before step a), described gallium nitride based LED epitaxial slice is carried out surface treatment, make the adhesive force of epitaxial wafer surface cleaning, and reduce the resistance on surface with raising epitaxial wafer surface.
In the step a); orienting needs the concrete operations in etched zone to be: at the superficial growth protection mask layer of P type gallium nitride; surface coated photoresist at this protection mask layer; then photoresist is exposed; develop then and remove the photoresist that is exposed part; thereby the protection mask that exposes its below, and exposed protection mask is crystal grain and needs etched zone, last wet etching is removed protection mask exposed on each crystal grain.
Preferably, in the step d), the P electrode is formed on the edge of transparency conducting layer, and electric current is spread better.
Preferably, in the step d), the N electrode is produced on the central area of the n type gallium nitride that exposes.If the N electrode is produced on the n type gallium nitride that exposes in the inner part, then because spacing is too small, follow-uply on the N electrode, carry out bonding wire when encapsulation because the routing skew may make the PN junction conducting on every side of N electrode cause the hidden danger of electric leakage, if the N electrode is produced on the n type gallium nitride that exposes in the outer part, cutting damage N electrode easily when bursting apart epitaxial wafer then, and then influence that it is electrical.
Preferably, the distance between the side of the n type gallium nitride that each side of N electrode is adjacent is 8～30 μ m, if distance between the two is too small, then the possibility increase of electric leakage takes place in follow-up bonding wire encapsulation process the PN junction around the N electrode; If between the two distance is excessive, the more active area 3 that just meaned etching also just means and has lost more light source, thereby causes the waste of light source.
As can be seen from the above technical solutions, the whole fringe region of not etching of the present invention crystal grain with the edge that exposes n type gallium nitride as Cutting Road, and only with the edge of the P type gallium nitride that exposes as Cutting Road, and only etch away the zone of the n type gallium nitride that needs making N electrode, therefore under identical chip size, keep more active area (being PN junction), electronics and hole have been had more in conjunction with chance, thereby improved the luminous efficiency of light-emitting diode chip for backlight unit.
Description of drawings
Fig. 1 is the structural representation of gallium nitride based LED epitaxial slice;
Fig. 2 is the schematic perspective view of the gallium nitride LED chip of prior art making;
Fig. 3 is the vertical view of the gallium nitride LED chip of prior art making;
Fig. 4 is the making flow chart of gallium nitride LED chip of the present invention;
Fig. 5 exposes the schematic diagram of protecting mask after the single crystal grain photoetching on the epitaxial wafer of the present invention;
Fig. 6 makes the schematic diagram of the Cutting Road that forms in the gallium nitride LED chip process for the present invention;
The schematic perspective view of the gallium nitride LED chip that Fig. 7 the present invention makes;
Fig. 8 is the vertical view of the gallium nitride LED chip of the present invention's making;
Encapsulation multiplying power comparison diagram after the gallium nitride LED chip that Fig. 9 makes respectively for the embodiment of the invention three and prior art encapsulates.
Embodiment
In order to understand purpose of the present invention better, further specify content of the present invention below by embodiment and in conjunction with relevant drawings.
Embodiment one
With reference to Fig. 1, Fig. 4 to Fig. 8, the manufacture method of gallium nitride LED chip of the present invention, undertaken by following steps:
1) provide gallium nitride based LED epitaxial slice, as shown in Figure 1, the structure of this epitaxial wafer is followed successively by from the bottom up: Sapphire Substrate 1, n type gallium nitride 2, active area 3, and P type gallium nitride 4.Preferably, at first epitaxial wafer is carried out surface treatment: epitaxial wafer is soaked in acetone and the aqueous isopropanol in regular turn, being aided with supersonic oscillations simultaneously cleans, with pollutants such as the organic substance of removing the epitaxial wafer surface attachment, greases, dry up the moisture that is attached to the epitaxial wafer surface at last with this epitaxial wafer of deionized water rinsing, and with nitrogen.Surface treatment is in order to make the epitaxial wafer surface cleaning improving the adhesive force on epitaxial wafer surface, and reduces the resistance on surface.
2) protect mask layer 11 in the superficial growth of P type gallium nitride 4; Utilize micro-photographing process to orient each crystal grain then and need etched zone; specifically; surface coated photoresist 12 at protection mask layer 11; then photoresist 12 is exposed, develop then and remove the photoresist 12 that is exposed part, thereby expose the protection mask 110 of its below; as shown in Figure 5; the protection mask 110 that should expose is crystal grain and needs etched zone, when orienting the zone that needs etching, has also cooked up the crystal grain of the unsegregated pre-making chip of a plurality of one.
3) wet etching is removed protection mask 110 exposed on each crystal grain, exposes the P type gallium nitride 4 of its below, removes undeveloped photoresist 12 then.P type gallium nitride 4 zones that should expose are needs etched zone.
4) from P type gallium nitride 4 surfaces of each crystal grain etching step 3 down) described in the etched zone of need; until exposing n type gallium nitride; remove P type gallium nitride 4 surperficial remaining protection mask layers 11 then, and n type gallium nitride 2 zones that this exposes are the zone that makes the N electrode.Because therefore operating procedure can not fully accurately can etch away the n type gallium nitride 2 of a part in the dry ecthing operating process of reality.
5) make transparency conducting layer 5 on the not etched P type of each crystal grain gallium nitride 4 surfaces, because compared with prior art, the present invention has kept more P type gallium nitride 4, therefore the also corresponding increase of area of the transparency conducting layer of making among the present invention 5, thereby under identical chip size, can increase light-emitting area.The shape of this transparency conducting layer 5 is similar to the shape of P type gallium nitride 4, but the surface area of its surface area ratio P type gallium nitride 4 is little, with the fringe region that exposes P type gallium nitride 4 as Cutting Road 40, as shown in Figure 6.
6) on the transparency conducting layer 5 of each crystal grain, make P electrode 6, on the n type gallium nitride that exposes 2 of each crystal grain, make N electrode 7, so far finished the making of light-emitting diode chip for backlight unit.Specifically, P electrode 6 can be produced on the edge of transparency conducting layer 5, electric current is spread better.In addition, the shape of N electrode 7 is similar to the shape in these n type gallium nitride that exposes 2 zones, and the surface area of N electrode is less than the surface area of this n type gallium nitride that exposes 2, N electrode 7 can be produced on the central area of this n type gallium nitride that exposes 2 thus, if N electrode 7 is produced on the n type gallium nitride 2 that exposes in the inner part, then because spacing is too small, follow-uply on N electrode 7, carry out bonding wire when encapsulation because the routing skew may make N electrode 7 PN junction conducting on every side cause the hidden danger of electric leakage, if N electrode 7 is produced on the n type gallium nitride 2 that exposes in the outer part, cutting damage N electrode 7 easily when bursting apart epitaxial wafer then, and then influence that it is electrical.
7) utilize to grind, cutting technique, be Cutting Road 40 with the fringe region of the P type gallium nitride of unsegregated chip chamber, epitaxial wafer is cut into a plurality of independently chips, each chip includes a pair of P electrode 6 and N electrode 7, as Fig. 7, shown in Figure 8.Preferably, after N electrode 7 is positioned at the central area of this n type gallium nitride that exposes 2, distance D between the side of the n type gallium nitride 2 that each side of N electrode 7 is adjacent is 8～30 μ m, its main cause is, if distance between the two is too small, then the possibility increase of electric leakage takes place in the PN junction around the N electrode 7 in follow-up bonding wire encapsulation process; If between the two distance is excessive, the more active area 3 that just meaned etching also just means and has lost more light source, thereby causes the waste of light source.In the present embodiment, distance D is 8 μ m.
Embodiment two
In the present embodiment, the distance D between the side of the n type gallium nitride 2 that each side of N electrode 7 is adjacent is 30 μ m, and all the other operations are identical with embodiment one.
Embodiment three
In the present embodiment, the distance D between the side of the n type gallium nitride 2 that each side of N electrode 7 is adjacent is 15 μ m, and all the other operations are identical with embodiment one.
Shown in Fig. 7,8, gallium nitride LED chip by said method making of the present invention, comprise Sapphire Substrate 1, n type gallium nitride 2, active area 3, P type gallium nitride 4, transparency conducting layer 5 from the bottom up successively, be formed on the P electrode 6 on the transparency conducting layer 5, and be formed on the lip-deep N electrode 7 that n type gallium nitride 2 exposes, wherein, the fringe region of P type gallium nitride 4 is not covered by transparency conducting layer 5, and this zone is as Cutting Road.Wherein, P electrode 6 is formed on the edge of transparency conducting layer 5, and N electrode 7 is formed on the central area of the n type gallium nitride 2 that exposes.
Luminous efficiency for the ease of the gallium nitride LED chip that contrasts of the present invention and prior art made, gallium nitride based LED epitaxial slice is divided into identical two halves, half is made of the embodiment of the invention three described methods, second half is made of prior art, all is made into the gallium nitride LED chip of same size.Table 1 is the naked brilliant electrical parameter of being made by embodiment three of testing of each gallium nitride LED chip, and table 2 is the contrast of the electrical parameter mean value of the mean value of each electrical parameter in the table 1 and the naked brilliant test of gallium nitride LED chip that prior art is made.
Table 1
Table 2
By the light intensity data of table 1, table 2 as can be known, the light intensity Iv high approximately 6.42% of the gallium nitride LED chip made than prior art of the light intensity Iv of the gallium nitride LED chip made of the present invention.
Encapsulation multiplying power comparison diagram after the gallium nitride LED chip that Fig. 9 makes respectively for the embodiment of the invention three and prior art encapsulates.The encapsulation multiplying power is meant the ratio of the light intensity of the axial light that light intensity on all directions that record after the light-emitting diode chip for backlight unit encapsulation and naked crystalline substance record.After the gallium nitride LED chip of choosing the different light intensity grade is packaged into gallium nitride based light emitting diode, the encapsulation multiplying power that compares the gallium nitride LED chip of the present invention and prior art, as shown in Figure 7, at 240-250mcd, 260-270mcd, 270-280mcd, on these four light intensity grades of 280-290mcd, the encapsulation multiplying power of gallium nitride LED chip of the present invention is respectively 9.09,8.74,8.84,8.75, and the encapsulation multiplying power of the gallium nitride LED chip of prior art is respectively 7.66,7.75,7.88,7.92, by above data more as can be known, the encapsulation multiplying power of gallium nitride LED chip of the present invention has improved more than 10% than prior art.
The above is preferred embodiment of the present invention only, is not to be used to limit protection scope of the present invention.
Claims (10)
1, a kind of gallium nitride LED chip, comprise Sapphire Substrate, n type gallium nitride, active area, P type gallium nitride, transparency conducting layer from the bottom up successively, be formed on the P electrode on the transparency conducting layer, and be formed on the lip-deep N electrode that n type gallium nitride exposes, it is characterized in that, the fringe region of described P type gallium nitride is not covered by transparency conducting layer, and this fringe region that is not covered by transparency conducting layer is a Cutting Road.
2, gallium nitride LED chip according to claim 1 is characterized in that, described P electrode is formed on the edge of described transparency conducting layer.
3, gallium nitride LED chip according to claim 1 and 2 is characterized in that, described N electrode is formed on the central area of the described n type gallium nitride that exposes.
4, gallium nitride LED chip according to claim 3 is characterized in that, the distance between the side of the n type gallium nitride that each side of described N electrode is adjacent is 8～30 μ m.
5, a kind of manufacture method of gallium nitride LED chip is characterized in that, this method may further comprise the steps successively:
A) provide gallium nitride based LED epitaxial slice, the structure of described epitaxial wafer is followed successively by from the bottom up: Sapphire Substrate, n type gallium nitride, active area, and P type gallium nitride, surface alignment at the P of described epitaxial wafer type gallium nitride goes out to need etched zone, and also cooks up the crystal grain of the unsegregated pre-making chip of a plurality of one;
B) from the P type gallium nitride surface of each crystal grain need etched zone of etching step described in a) down, until exposing n type gallium nitride;
C) make transparency conducting layer on the surface of the not etched P type of each crystal grain gallium nitride, the surface area of the surface area ratio P type gallium nitride of described transparency conducting layer is little, with the fringe region that exposes P type gallium nitride as Cutting Road;
D) on the described transparency conducting layer of each crystal grain, make the P electrode, and on the described n type gallium nitride that exposes of each crystal grain, make the N electrode, to form light-emitting diode chip for backlight unit;
E) fringe region with the P type gallium nitride of unsegregated chip chamber is that Cutting Road cuts into a plurality of chips with epitaxial wafer, and each chip includes a pair of P electrode and N electrode.
6, the manufacture method of gallium nitride LED chip according to claim 5 is characterized in that, before step a), described gallium nitride based LED epitaxial slice is carried out surface treatment.
7, the manufacture method of gallium nitride LED chip according to claim 5; it is characterized in that; in the step a); orienting needs the concrete operations in etched zone to be: at the superficial growth protection mask layer of P type gallium nitride; surface coated photoresist at described protection mask layer; then described photoresist is exposed; develop then and remove the photoresist that is exposed part; thereby the protection mask that exposes its below; described exposed protection mask is crystal grain and needs etched zone, and last wet etching is removed protection mask exposed on each crystal grain.
8, the manufacture method of gallium nitride LED chip according to claim 5 is characterized in that, in the step d), described P electrode is formed on the edge of transparency conducting layer.
According to the manufacture method of each described gallium nitride LED chip in the claim 5 to 8, it is characterized in that 9, in the step d), described N electrode is produced on the central area of the described n type gallium nitride that exposes.
10, the manufacture method of gallium nitride LED chip according to claim 9 is characterized in that, the distance between the side of the n type gallium nitride that described each side of N electrode is adjacent is 8～30 μ m.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101872823A (en) * | 2010-06-07 | 2010-10-27 | 厦门市三安光电科技有限公司 | Gallium nitride-based light-emitting diode (LED) with distributed Bragg reflectors on side walls and preparation method thereof |
| CN101882659A (en) * | 2010-06-28 | 2010-11-10 | 亚威朗光电(中国)有限公司 | Light-emitting diode chip and method for manufacturing same |
| CN101950783A (en) * | 2010-08-23 | 2011-01-19 | 厦门市三安光电科技有限公司 | Manufacturing process of gallium nitride based high-brightness LED chips |
| CN102738326A (en) * | 2011-04-06 | 2012-10-17 | 南通同方半导体有限公司 | GaN based light emitting diode structure and manufacturing method thereof |
| CN105870276A (en) * | 2016-06-13 | 2016-08-17 | 南昌凯迅光电有限公司 | ITO (Indium Tin Oxide)-structure LED (Light Emitting Diode) chip and cutting method thereof |
| CN105895652A (en) * | 2015-02-17 | 2016-08-24 | 新世纪光电股份有限公司 | High-Voltage Light Emitting Diode And Manufacturing Method Thereof |
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2008
- 2008-06-10 CN CNA2008101115897A patent/CN101604715A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101872823A (en) * | 2010-06-07 | 2010-10-27 | 厦门市三安光电科技有限公司 | Gallium nitride-based light-emitting diode (LED) with distributed Bragg reflectors on side walls and preparation method thereof |
| CN101882659A (en) * | 2010-06-28 | 2010-11-10 | 亚威朗光电(中国)有限公司 | Light-emitting diode chip and method for manufacturing same |
| CN101950783A (en) * | 2010-08-23 | 2011-01-19 | 厦门市三安光电科技有限公司 | Manufacturing process of gallium nitride based high-brightness LED chips |
| CN102738326A (en) * | 2011-04-06 | 2012-10-17 | 南通同方半导体有限公司 | GaN based light emitting diode structure and manufacturing method thereof |
| CN105895652A (en) * | 2015-02-17 | 2016-08-24 | 新世纪光电股份有限公司 | High-Voltage Light Emitting Diode And Manufacturing Method Thereof |
| CN105870276A (en) * | 2016-06-13 | 2016-08-17 | 南昌凯迅光电有限公司 | ITO (Indium Tin Oxide)-structure LED (Light Emitting Diode) chip and cutting method thereof |
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Open date: 20091216 |