CN203250787U - Light-emitting diode with scattering structure and lighting system - Google Patents
Light-emitting diode with scattering structure and lighting system Download PDFInfo
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- CN203250787U CN203250787U CN 201320199874 CN201320199874U CN203250787U CN 203250787 U CN203250787 U CN 203250787U CN 201320199874 CN201320199874 CN 201320199874 CN 201320199874 U CN201320199874 U CN 201320199874U CN 203250787 U CN203250787 U CN 203250787U
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Abstract
The utility model discloses a light-emitting diode with a scattering structure and a lighting system. The light-emitting diode with the scattering structure at least comprises a substrate, an epitaxial layer which is arranged on the substrate and comprises a P-type layer, a light-emitting region and an N-type layer, a P electrode which is located on the P-type layer. The light-emitting diode with the scattering structure is characterized in that the scattering structure is formed between the P electrode and the epitaxial layer and is composed of a coarsened light-transmitting layer and a first reflection layer; the geometric size of the scattering structure is not larger than the size of the P electrode at a vertical direction; the lower surface of the coarsened light-transmitting layer, which contacts with the epitaxial layer, is in a coarsened state; and the upper surface of the coarsened light-transmitting layer, which contacts with the first reflection layer, is in a flat state. According to the light-emitting diode with the scattering structure of the utility model, the coarsened light-transmitting layer and the first reflection layer are additionally arranged between the epitaxial layer and the P electrode, such that the scattering structure can be formed, as a result, light emitted from a light-emitting layer can be extracted effectively, and light absorption of the P electrode can be decreased, and therefore, light emitting efficiency can be improved. The light-emitting diode with the scattering structure can be applied to the lighting system.
Description
Technical field
The utility model relates to a kind of light-emitting diode and illuminator, especially relates to a kind of light-emitting diode and illuminator with diffusing structure.
Background technology
Light-emitting diode (English is Light Emitting Diode, is called for short LED) is a kind of light emitting semiconductor device, is widely used in indicator light, display screen etc.White light LEDs is the third generation electric light source after incandescent lamp and fluorescent lamp, has become the target that all over the world light source and light fixture research institution are competitively developed, made great efforts to obtain, and is the star industry of following lighting field.The energy consumption of white light LEDs only is 1/8 of incandescent lamp, 1/2 of fluorescent lamp, and its life-span is 100,000 hours, and illumination is " putting things right once and for all " for average family.Also can realize simultaneously mercurylessly, reclaim easily, this is significant for environmental protection and energy savings.
The external quantum efficiency of LED determines by internal quantum efficiency and light extraction efficiency, and through effort for many years, nowadays internal quantum efficiency is near 100%, the limited space of lifting, so light extraction efficiency depends on the luminous efficiency of LED to a great extent.For this reason, the research that improves the LED luminous efficiency is comparatively active, major technique has the graph substrate of employing technology, distributed current barrier layer (also claiming current barrier layer), distributed Bragg reflecting layer (the English Distributed Bragg Reflector of being is called for short DBR) structure, transparent substrates, surface coarsening, photonic crystal technology etc.
Referring to Fig. 1, in conventional formal dress light emitting diode construction, comprise substrate 100, from lower to upper stacking N-type layer 101, luminous zone 102, P type layer 103, current extending 104, P electrode 105 and be arranged on N electrode 106 on N-type layer 101 exposed surface.Because P electrode 106(is generally the Cr/Pt/Au material) light there is absorption, so that the part light that luminescent layer sends fails to emit, cause light loss, affect the luminous efficiency of chip.
Summary of the invention
The utility model provides a kind of LED with diffusing structure, it forms diffusing structure by set up alligatoring photic zone and reflector between the epitaxial loayer of LED and P electrode, can effectively take out the light that luminescent layer sends, reduce the extinction phenomenon of P electrode, thereby increase light extraction efficiency.
The disclosed a kind of light-emitting diode with diffusing structure of the utility model comprises: substrate; Epitaxial loayer is positioned on the described substrate, and wherein epitaxial loayer comprises P type layer, luminous zone and N-type layer; The P electrode is positioned on the P type layer; It is characterized in that: a diffusing structure is formed between described P electrode and the described epitaxial loayer, consisted of by alligatoring photic zone and the first reflector, its physical dimension is not more than the size of P electrode in vertical direction, the lower surface that wherein said alligatoring photic zone contacts with epitaxial loayer is the alligatoring shape, and described alligatoring photic zone is flat with the upper surface that described the first reflector contacts.
In certain embodiments, described light-emitting diode also comprises in the second reflector under the substrate or the second reflector between substrate and epitaxial loayer.
In certain embodiments, described alligatoring photic zone can be selected the low-refraction material, such as SiO
2Or Al
2O
3Deng dielectric, also can select the electric conducting materials such as ITO, in addition, the euphotic refractive index of alligatoring is as far as possible less than the refractive index of P type layer.
In certain embodiments, described alligatoring photic zone can also mix scattering diluent or have the material of scattering process.
In certain embodiments, described the first reflector can be distributed Bragg reflecting layer or metallic reflector.
In certain embodiments, described the second reflector can be distributed Bragg reflecting layer or metallic reflector or comprehensive reflector.
In certain embodiments, described distributed Bragg reflecting layer is comprised of the high index of refraction that replaces and low refractive index material layer, and the high index of refraction layer material is selected from TiO, TiO
2, Ti
3O
5, Ti
2O
3, Ta
2O
5, ZrO
2One of or aforesaid combination in any, the low-refraction layer material is selected from SiO
2, SiN
x, Al
2O
3One of or aforesaid combination in any.
In certain embodiments, described metallic reflector can be selected Al or Ag or Ni.
In certain embodiments, described substrate can be selected GaP or GaAs or Al
2O
3Perhaps SiC or Si.
The invention also discloses a kind of illuminator, it has comprised any one characteristics of the light-emitting diode of described a kind of diffusing structure.
Compared with prior art, the beneficial effects of the utility model are:
(1) the utility model is by setting up alligatoring photic zone and reflector between the epitaxial loayer of LED and P electrode, form diffusing structure, so that the light of the part that luminescent layer sends is through the just from the side outgoing of primary event of diffusing structure, also can be so that another part want the light of directive P electrode through the backward upper outgoing of the double reflection in the second reflector originally, and then the light that promotes chip takes out efficient;
(2) the alligatoring photic zone that is comprised of dielectric has the effect of current blocking concurrently, and the electric current that reduces the chip electrode below gathers, and has further improved the luminous efficiency of chip; The alligatoring photic zone that is comprised of conducting medium has the effect of current spread concurrently, both can improve light emission rate, can reduce operating voltage again.
Other features and advantages of the utility model will be set forth in the following description, and, partly from specification, become apparent, perhaps understand by implementing the utility model.The purpose of this utility model and other advantages can realize and obtain by specifically noted structure in specification, claims and accompanying drawing.
Although describe the utility model in connection with some exemplary enforcements and using method hereinafter, it will be appreciated by those skilled in the art that and be not intended to the utility model is limited to these embodiment.Otherwise, be intended to cover all substitutes, correction and the equivalent that are included in the defined spirit of the present utility model of appending claims and the scope.
Description of drawings
Accompanying drawing is used to provide a further understanding of the present invention, and consists of the part of specification, is used from explanation the present invention with inventive embodiment one, does not consist of the restriction to invention.In addition, the accompanying drawing data are to describe summary, are not to draw in proportion.
Fig. 1 is known formal dress light emitting diode construction schematic diagram.
Fig. 2 is the utility model embodiment 1 disclosed generalized section with light-emitting diode of diffusing structure.
Fig. 3 is the utility model embodiment 2 disclosed generalized sections with light-emitting diode of diffusing structure.
Fig. 4 is the utility model embodiment 3 disclosed generalized sections with light-emitting diode of diffusing structure.
Fig. 5 is the utility model embodiment 4 disclosed generalized sections with light-emitting diode of diffusing structure.
Fig. 6 is the utility model embodiment 5 disclosed generalized sections with light-emitting diode of diffusing structure.
Parts symbol description among the figure:
100: substrate; 101:N type layer; 102: the luminous zone; 103:P type layer; 104: metallic reflector; 105: current extending; The 106:P electrode; The 107:N electrode;
200: substrate; 201:N type layer; 202: the luminous zone; 203:P type layer; 204: the alligatoring photic zone; The 205:P electrode; The 206:N electrode; 207: the first reflector; 208: the second reflector;
300: substrate; 301:N type layer; 302: the luminous zone; 303:P type layer; 304: the alligatoring photic zone; The 305:P electrode; The 306:N electrode; 307: the first reflector;
400: substrate; 401:N type layer; 402: the luminous zone; 403:P type layer; 404: the alligatoring photic zone; The 405:P electrode; The 406:N electrode; 407: the first reflector;
500: substrate; 501:P type layer; 502: the luminous zone; 503:N type layer; 504: the alligatoring photic zone; The 505:N electrode; 506: the second reflector; 507: the first reflector; The 508:P electrode;
600: substrate; 601:N type layer; 602: the luminous zone; 603:P type layer; 604: the alligatoring photic zone; The 605:P electrode; The 606:N electrode; 607: the first reflector.
Embodiment
Describe embodiments of the present invention in detail below with reference to drawings and Examples, how the application technology means solve technical problem to the present invention whereby, and the implementation procedure of reaching technique effect can fully understand and implements according to this.Need to prove, only otherwise consist of conflict, each embodiment among the present invention and each feature among each embodiment can mutually combine, and formed technical scheme is all within protection scope of the present invention.In concrete designs with in making, the LED structure that the utility model proposes will modify its part-structure and size within the specific limits according to the needs of application and manufacturing process enforcement, and choosing of material carried out accommodation.
The disclosed a kind of invention diode with diffusing structure of following each embodiment comprises: substrate, epitaxial loayer, diffusing structure and first, second electrode.
Specifically, substrate can select material can select gallium phosphide (GaP) or GaAs (GaAs) or sapphire (Al
2O
3) or carborundum (SiC) or silicon chip (Si) etc.For the LED device of horizontal structure, select the insulating properties material; And for the LED device of vertical stratification, then select conductive material.
Epitaxial loayer can be formed on the surface of substrate by epitaxial growth, at least comprise the first type semiconductor layer (such as the N-type layer), luminescent layer and Second-Type semiconductor layer (such as P type layer) on to descending, also can comprise resilient coating, electronic barrier layer, current extending etc.Need to prove, in fact the first type semiconductor layer and Second-Type semiconductor layer are comparatively speaking, and it has opposite is P type layer such as the first type semiconductor layer electrically, and then correspondingly, the Second-Type semiconductor layer is the N-type layer.Similarly, the electrode definition that is connected with the first type semiconductor layer is the first electrode, and the electrode definition that is connected with the Second-Type semiconductor layer is the second electrode.
Diffusing structure is positioned between the second electrode (such as the P electrode) and the P type layer, consisted of by alligatoring photic zone and the first reflector, the size of diffusing structure is set according to the shape of P electrode, its physical dimension is not more than the size of P electrode in vertical direction, the lower surface that wherein said alligatoring photic zone contacts with described epitaxial loayer is the alligatoring shape, and is flat with the upper surface that described the first reflector contacts.In some preferred embodiments, distributed Bragg reflecting layer (DBR) or metallic reflector are selected in the first reflector in the diffusing structure; The alligatoring photic zone is selected the low-refraction insulating medium layer, and it has the effect of current blocking concurrently, and the electric current that reduces the chip electrode below gathers, and has further improved the luminous efficiency of chip; The alligatoring photic zone is selected the conducting medium of low-refraction, then has the effect of current spread concurrently, can both can improve light emission rate, can reduce operating voltage again.
The P electrode is used to luminescent layer to provide electric current to inject.For the LED device of horizontal structure, but P type layer and the luminescent layer of etching part expose the N-type layer, and the N electrode is formed on the exposed N-type layer surface.For the LED device of vertical stratification, N electrode (can select metallic reflector) then is produced on the back side of conductive substrates.
In some preferred embodiments, described light-emitting diode also comprises in the second reflector under the substrate or the second reflector between substrate and epitaxial loayer.
More details below in conjunction with embodiment 1 ~ 5 and 2 ~ 6 pairs of implementations of the present invention of accompanying drawing explain.
Embodiment 1
A kind of light-emitting diode with diffusing structure as shown in Figure 2 comprises: Sapphire Substrate 200, N-type layer 201, luminous zone 202, P type layer 203, alligatoring photic zone 204, the first reflector 207, the second reflector 208, P electrode 205 and N electrode 206.
Specifically, in the above-mentioned light emitting diode construction, the bottom is the second reflector 208; Sapphire Substrate 200 is positioned on the second reflector 208; N-type layer 201 is formed on the Sapphire Substrate 200; Luminous zone 202 is formed on the N-type layer 201; P type layer 203 is formed on the luminous zone 202; Alligatoring photic zone 204 is formed in 203 layers on the P type layer, and wherein the alligatoring photic zone is the alligatoring shape with the lower surface that P type layer 203 contacts, and this interface can be a random alligatoring face, and upper surface flushes with P type layer 203, this interface CMP burnishing surface of can being advisable; The first reflector 207 is formed on the alligatoring photic zone, and size is slightly larger than the euphotic upper surface area of alligatoring; P electrode 205, be formed on the first reflector 207 and P electrode area size suitable with the first reflector 207 sizes; The N-type layer is formed on the exposed N-type layer 201, and wherein the alligatoring photic zone is selected SiO
2Insulating medium layer, the Al metallic reflector is selected in the first reflector 207, and comprehensive reflector is selected in the second reflector 208.
The refractive index of setting alligatoring photic zone 204 is n
1, the refractive index of P type layer 203 is n
2, the critical angle of then reflecting total reflection is θ c=arcsin (n
1/ n
2), when incidence angle θ〉during θ c, total reflection occurs at the interface.According to the Snell law, total reflection can occur in close the dredging to light of light, and n1＜n2 in the present embodiment then works as incidence angle θ〉θ c, total reflection can occur at the euphotic roughed interface of alligatoring, in addition, P electrode below also is provided with the first reflector of high reflectance, the diffusing structure that so consists of, performance ODR effect, so that the just from the side outgoing of primary event of the light of the part that luminescent layer sends process diffusing structure, thereby avoid being absorbed by the P electrode, increase the bright dipping probability.Moreover, because the second reflector 208 that substrate below arranges, meeting so that the light that a part is wanted directive P electrode originally through the double reflection in the second reflector after more upwards outgoing, and then the light taking-up efficient of lifting chip.
The above-mentioned alligatoring photic zone that is comprised of dielectric also has the effect of current blocking concurrently, and the electric current that reduces the chip electrode below gathers, and has further improved the luminous efficiency of chip.
Embodiment 2
As shown in Figure 3, the present embodiment discloses a kind of light-emitting diode with diffusing structure of vertical stratification.At the present embodiment, adopt Si as substrate 300, N electrode 306 is formed at the back side of substrate, has consisted of the LED device architecture of vertical stratification.Compare with embodiment 1, different is that the first reflector 307 is formed on the alligatoring photic zone 304, and size is suitable with the euphotic upper surface area of alligatoring; P electrode 305 is formed on the first reflector 307 and with it and envelopes, and avoids the reflective metals such as Al, Ag easily oxidized, and namely P electrode area size is more bigger than the first reflector 207 sizes.
Lower surface (alligatoring face) design of above-mentioned alligatoring photic zone 304, be scattered out in the time of can making the most of low-angle light in P electrode below arrive alligatoring face, avoid being blocked by electrode and absorbing, shooting angle and path also change simultaneously, significantly reduce light and return the possibility that is absorbed by MQW along former road, thereby improve light extraction efficiency.
Embodiment 3
As shown in Figure 4, the present embodiment discloses a kind of light-emitting diode with diffusing structure of vertical stratification.At the present embodiment, adopt GaP as substrate 400, select metallic reflector to be formed at the back side of substrate as N electrode 406, consisted of the LED device architecture of vertical stratification.Compare with embodiment 1, different is that alligatoring photic zone 404 is selected the ITO conducting medium of tool low-refraction, the diffusing structure that forms with the first reflector 407 like this, and in conjunction with N electrode (serving as the second reflector) 406, its mechanism of action is similar to Example 1, repeats no more.In addition, the alligatoring photic zone that is comprised of conducting medium has the effect of current spread concurrently, both can improve light emission rate, can reduce operating voltage again.
Embodiment 4
As shown in Figure 5, the present embodiment discloses a kind of light-emitting diode with diffusing structure of vertical stratification.At the present embodiment, adopt Si as substrate 500, P electrode 508 is formed at the back side of substrate, has consisted of the LED device architecture of vertical stratification.Compare with embodiment 1, different is, also is provided with the second reflector 506 between substrate 500 and epitaxial loayer, and epitaxial loayer comprises from bottom to up: P type layer, luminescent layer and N-type layer.Alligatoring photic zone 504 is selected the low-refraction insulating medium layer, the diffusing structure that is formed by alligatoring photic zone 504 and the first reflector 507, and in conjunction with the second reflector 506, its mechanism of action is similar to Example 1, repeats no more.
Embodiment 5
As shown in Figure 6, the present embodiment discloses a kind of light-emitting diode with diffusing structure of vertical stratification.At the present embodiment, adopt silicon as substrate 600, select metallic reflector to be formed at the back side of substrate as N electrode 606, consisted of the LED device architecture of vertical stratification.Compare with embodiment 2, different is that distributed Bragg reflecting layer is selected in the first reflector 607; Alligatoring photic zone 604 mixes scattering diluent equably, further strengthens its scattering process.Alligatoring photic zone 604 is selected the low-refraction insulating medium layer, the diffusing structure that is formed by alligatoring photic zone 604 and the first reflector 607, and in conjunction with N electrode (serving as the second reflector) 606, its mechanism of action is similar to Example 1, repeats no more.
The light-emitting diode chip for backlight unit of the various embodiments described above can be applicable to the fields such as various display systems, illuminator, automobile tail light.
Claims (9)
1. the light-emitting diode with diffusing structure comprises: substrate; Epitaxial loayer is positioned on the described substrate, and wherein epitaxial loayer comprises the first type semiconductor layer, luminous zone and Second-Type semiconductor layer from top to bottom successively; The first electrode is positioned on the first type semiconductor layer; It is characterized in that: the diffusing structure that is made of alligatoring photic zone and the first reflector is formed between described the first electrode and the described epitaxial loayer, its physical dimension is not more than the size of the first electrode in vertical direction, the lower surface that wherein said alligatoring photic zone contacts with epitaxial loayer is the alligatoring shape, and described alligatoring photic zone is flat with the upper surface that the first reflector contacts.
2. a kind of light-emitting diode with diffusing structure according to claim 1, it is characterized in that: described light-emitting diode also comprises in the second reflector under the substrate or the second reflector between substrate and epitaxial loayer.
3. a kind of light-emitting diode with diffusing structure according to claim 1, it is characterized in that: described alligatoring photic zone is low-refraction insulating medium layer or low-refraction conducting medium layer.
4. a kind of light-emitting diode with diffusing structure according to claim 1, it is characterized in that: the euphotic refractive index of described alligatoring is less than the refractive index of Second-Type semiconductor layer.
5. a kind of light-emitting diode with diffusing structure according to claim 1, it is characterized in that: distributed Bragg reflecting layer or metallic reflector are selected in described the first reflector.
6. a kind of light-emitting diode with diffusing structure according to claim 2, it is characterized in that: distributed Bragg reflecting layer or metallic reflector or comprehensive reflector are selected in described the second reflector.
7. according to claim 5 or 6 described a kind of light-emitting diodes with diffusing structure, it is characterized in that: described metallic reflector is selected Al or Ag or Ni.
8. a kind of light-emitting diode with diffusing structure according to claim 1, it is characterized in that: described substrate is selected GaP or GaAs or Al
2O
3Perhaps SiC or Si.
9. illuminator, it is characterized in that: it comprises described any one light-emitting diode of a series of aforementioned claims 1 ~ 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320199874 CN203250787U (en) | 2013-04-19 | 2013-04-19 | Light-emitting diode with scattering structure and lighting system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320199874 CN203250787U (en) | 2013-04-19 | 2013-04-19 | Light-emitting diode with scattering structure and lighting system |
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| Publication Number | Publication Date |
|---|---|
| CN203250787U true CN203250787U (en) | 2013-10-23 |
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ID=49377209
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109768138A (en) * | 2018-12-28 | 2019-05-17 | 华灿光电（浙江）有限公司 | A kind of light-emitting diode chip for backlight unit and preparation method thereof |
-
2013
- 2013-04-19 CN CN 201320199874 patent/CN203250787U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109768138A (en) * | 2018-12-28 | 2019-05-17 | 华灿光电（浙江）有限公司 | A kind of light-emitting diode chip for backlight unit and preparation method thereof |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20131023 |