CN209859970U - Light-emitting diode and lamp - Google Patents
Light-emitting diode and lamp Download PDFInfo
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- CN209859970U CN209859970U CN201920263680.4U CN201920263680U CN209859970U CN 209859970 U CN209859970 U CN 209859970U CN 201920263680 U CN201920263680 U CN 201920263680U CN 209859970 U CN209859970 U CN 209859970U
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 146
- 239000002184 metal Substances 0.000 claims abstract description 145
- 238000003475 lamination Methods 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 256
- 239000004065 semiconductor Substances 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 12
- 239000012780 transparent material Substances 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 239000011241 protective layer Substances 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- 229910008599 TiW Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 239000011651 chromium Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
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- 239000010948 rhodium Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 241001465382 Physalis alkekengi Species 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QQHSIRTYSFLSRM-UHFFFAOYSA-N alumanylidynechromium Chemical compound [Al].[Cr] QQHSIRTYSFLSRM-UHFFFAOYSA-N 0.000 description 1
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- 230000008859 change Effects 0.000 description 1
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- 238000003892 spreading Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
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Abstract
The utility model discloses a light-emitting diode and a lamp, wherein a first graphical metal layer is formed on one side of the second surface of a light-emitting epitaxial lamination, and a first insulating medium layer is arranged between the first graphical metal layer; a second patterned metal layer formed at least on a surface of the first patterned metal layer remote from the light-emitting epitaxial stack; the electric mobility of the first graphical metal layer is larger than that of the second graphical metal layer; the second graphical metal layer does not cover completely or just in time covers the surface of keeping away from luminous epitaxial stromatolite of first graphical metal layer, utilizes the utility model discloses a light emitting diode of bigger reflection metal area can be made to the transparent insulating medium structure of light emitting diode unit.
Description
Technical Field
The utility model relates to a semiconductor photoelectricity field, concretely relates to light emitting diode structure.
Background
Light emitting diodes are widely used as solid state lighting sources. Compared with the traditional incandescent bulb and fluorescent lamp, the light emitting diode has the advantages of low power consumption, long service life and the like, so the light emitting diode gradually replaces the traditional light source and is applied to various fields such as traffic signs, backlight modules, street lamp illumination, medical equipment and the like. In order to improve the light emitting efficiency of the light emitting diode, a reflective layer is usually disposed below the epitaxial lamination layer, so that light emitted downward from the active layer is reflected back by the reflective layer, thereby increasing the light emitting efficiency.
SUMMERY OF THE UTILITY MODEL
The utility model provides a light emitting diode, its outside that has effectively improved light emitting diode efficiency of getting light.
A light emitting diode comprising:
the light-emitting epitaxial lamination is made of gallium nitride-based epitaxial materials and comprises a first semiconductor layer, an active layer and a second semiconductor layer, wherein the first semiconductor layer is an N-type semiconductor layer, the active layer is a light-emitting quantum well, and the second semiconductor layer is a P-type semiconductor layer and is provided with a corresponding first surface and a corresponding second surface;
the first patterned metal layer is formed on one side of the second surface of the light-emitting epitaxial lamination layer, can be in direct contact with the second surface, and can also be used for constructing a current expansion channel through a preset channel of a first insulating medium layer;
a second patterned metal layer formed at least on a surface of the first patterned metal layer remote from the light-emitting epitaxial stack;
the mobility of the first patterned metal layer is greater than that of the second patterned metal layer, namely the mobility of the metal of the first patterned metal layer is greater than that of the metal of the second patterned metal layer, and the second patterned metal layer plays a role in blocking diffusion of the first patterned metal layer;
the area of the first patterned metal layer under the light-emitting epitaxial stack is greater than or equal to that of the second patterned metal layer, which may also be defined as the second patterned metal layer not completely covering or just covering the surface of the first patterned metal layer away from the light-emitting epitaxial stack. The second patterned metal layer forms an anti-migration effect on the material of the first patterned metal layer together with the first insulating dielectric layer.
According to the utility model discloses, it is preferred, in order to guarantee that the light takes out efficiency, first graphical metal level includes the metal reflection stratum, and second graphical metal level includes the passivation protective layer.
According to the present invention, preferably, the first patterned metal layer includes Ag or Al having a higher mobility, and the second patterned metal layer includes a relatively stable metal having a lower electric mobility, such as Ti, TiW, Ni, Rh, Pt, or Au.
According to the present invention, preferably, the first insulating medium layer includes a DBR or a transparent insulating medium.
According to the present invention, preferably, the surface of the first patterned metal layer remote from the light-emitting epitaxial stack is covered by a second insulating dielectric layer and/or a second patterned metal layer, where the material of the first insulating dielectric layer between the second insulating dielectric layer and the first patterned metal layer may be the same or different.
According to the present invention, preferably, the second insulating medium layer includes a DBR or a transparent insulating medium.
According to the utility model discloses, preferably, the side of second graphical metal level and the side surface of keeping away from first graphical metal level are covered by second dielectric layer, and second dielectric layer constitutes dual barrier effect to the metal of first graphical metal level together with second graphical metal level.
According to the present invention, preferably, the second patterned metal layer is located between the second insulating medium layer and the first patterned metal layer.
According to the present invention, preferably, the light-emitting epitaxial stack has a recess penetrating the active layer from the second semiconductor layer to the first semiconductor layer, the side wall of the recess is covered with the first insulating medium layer and/or the second insulating medium layer, the recess is filled with the third patterned metal layer, and the recess constitutes an electrical connection channel of the light-emitting diode. The short circuit of the circuit is prevented by means of the first insulating dielectric layer.
According to the invention, the recess is preferably filled with a third patterned metal layer having reflective properties.
According to the invention, preferably, the metal of reflective character extends horizontally after filling the recess, covering at least the back side of the second insulating-medium layer.
According to the present invention, preferably, the metal filled in the recess comprises Al or Ag.
According to the utility model discloses, preferably, first graphical metal layer extends to the concave recess lateral wall in the horizontal direction, obtains bigger reflecting area as far as possible.
Preferably, according to the invention, a transparent material layer is provided between the first patterned metal layer and the luminescent epitaxial stack, the combination forming a total reflector.
According to the present invention, preferably, the first patterned metal layer is coated with a transparent material layer.
According to the present invention, preferably, the transparent material layer includes a transparent conductive layer or a transparent insulating layer.
Preferably, according to the present invention, an insulating reflective layer is provided between the first patterned metal layer and the light-emitting epitaxial stack.
Compared with the prior art, the utility model provides a light emitting diode chip, technological effect includes: the utility model provides a LED with higher light efficiency utilizes the utility model relates to a LED of bigger reflection metal area can be made to the transparent insulating medium structure of LED unit.
Simultaneously the utility model also discloses a lamps and lanterns use above-mentioned arbitrary emitting diode chip.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by the practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention, and together with the description serve to explain the invention and not to limit the invention. Furthermore, the drawing figures are for a descriptive summary and are not drawn to scale.
Fig. 1 is a schematic structural diagram of a light emitting diode chip of embodiment 1;
FIG. 2 is a comparative graph of chip test data for example 1;
FIG. 3 is a comparative graph of chip test data of a modified example of example 1;
fig. 4 to 6 are schematic structural views of a light emitting diode chip of embodiment 2;
FIG. 7 is a top view of the light emitting diode chip of example 2;
FIG. 8 is a comparative graph of chip test data for example 2;
fig. 9 and 10 are schematic structural views of a light emitting diode chip of embodiment 2;
fig. 11 to 13 are schematic structural views of a light emitting diode chip of embodiment 3.
The reference numerals in the figures denote the following: 100. the semiconductor device comprises a substrate, 210, a first semiconductor layer, 220, a second semiconductor layer, 230, an active layer, 201, a recess, 202, a side wall, 310, a first electrode, 320, a second electrode, 410, a first patterned metal layer, 420, a second patterned metal layer, 430, a third patterned metal layer, 510, a first insulating medium layer, 520, a second insulating medium layer, 610, a transparent insulating layer, 620, a transparent conducting layer, 630, an insulating reflecting layer, 631 and a through hole.
Detailed Description
The following detailed description of the led chip and the method for manufacturing the led chip will be made in conjunction with the schematic drawings, and before further describing the present invention, it should be understood that the present invention is not limited to the following specific embodiments, since specific embodiments can be modified. It is also to be understood that the embodiments are presented by way of illustration, not of limitation, since the scope of the invention is defined by the appended claims. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art.
Referring to fig. 1, in a first embodiment of the present invention, a light emitting diode is provided, using a metal substrate 100, such as Au (gold), having a light emitting epitaxial stack comprising a first semiconductor layer 210, a second semiconductor layer 220 and an active layer 230 therebetween, having corresponding first and second surfaces; the first semiconductor layer 210 is an N-type semiconductor layer, the first electrode 310 electrically connected to the first semiconductor layer 210 is a conductive substrate 100 for supporting the light emitting epitaxial stack, the second electrode 320 electrically connected to the second semiconductor layer 220, and the second electrode 320 is electrically connected to the second semiconductor layer 220 through an electrical connection material, in this embodiment, the electrical connection material is a first patterned metal layer and a second patterned metal layer, that is, the first patterned metal layer and the second patterned metal layer have openings or slots, and the electrical connection means electrical conduction, not necessarily direct contact, but electrical conduction through a conductive material, such as ITO, IZO, and the like.
A first patterned metal layer 410 formed on the second surface of the light-emitting epitaxial stack, and a first insulating dielectric layer 510 having insulating property, such as SiO, between the first patterned metal layer 4102(silicon dioxide) or SiN (silicon nitride), i.e., the first patterned metal layer 410 is patterned at intervals by the first insulating dielectric layer 510, and the first insulating dielectric layer 510 functions to suppress electromigration to some extent.
The second patterned metal layer 420 is formed at least on the surface of the first patterned metal layer 410 away from the light-emitting epitaxial stack, in this embodiment, on the lower surface of the first patterned metal layer 410.
The material electron mobility of the first patterned metal layer 410 is greater than that of the second patterned metal layer 420, and generally, the metal electron mobility can be higher or lower by comparing the effective valence number of the metal, the larger the absolute value of the effective valence number of the metal is, the higher the metal electron mobility is, and the material of the first patterned metal layer 410, such as Ag (silver) or Al (aluminum), has a more active characteristic and is easy to migrate in a chip; the second patterned metal layer 420 may be a relatively stable metal or alloy material such as Ti (titanium), TiW (titanium tungsten), Rh (rhodium), Pt (platinum), or Au (gold) as a passivation protective layer. The first patterned metal layer 410 acts as a mirror, and the area of the mirror is larger than or equal to the area of the second patterned metal layer 420, where the second patterned metal layer 420 mainly refers to the area under the light emitting area of the light emitting epitaxial stack, and the second patterned metal layer does not completely cover or just covers the surface of the first patterned metal layer away from the light emitting epitaxial stack, regardless of the area of the second patterned metal layer 420 located on the window platform of the second electrode 320.
The surface of the first patterned metal layer 410 away from the light-emitting epitaxial stack, i.e., the lower surface of the first patterned metal layer 410, is covered by the second insulating dielectric layer 520 or the second patterned metal layer 420, or both, respectively, covering a portion of the lower surface. The sides of the second patterned metal layer 420 and the surfaces away from the first patterned metal layer 410 are covered by a second insulating dielectric layer 520. The second patterned metal layer 420 is located between the second insulating dielectric layer 520 and the first patterned metal layer 410.
In order to meet the requirement of high current density, a uniformly distributed current channel is constructed in the chip, the light-emitting epitaxial lamination layer is provided with a recess 201 penetrating from the second semiconductor layer 220 to the first semiconductor layer 210, the side wall 202 of the recess 201 is covered with a first insulating medium layer 510, in some cases, the sidewalls 202 are covered with a second insulating dielectric layer 520 over the first insulating dielectric layer 510, as distinguished from the first insulating dielectric layer 510, in the present embodiment, the first insulating dielectric layer 510 and the second insulating dielectric layer 520 are made of, for example, silicon dioxide or silicon nitride, in the present embodiment, silicon nitride, and the third patterned metal layer 430 filled in the recess 201 and having reflective characteristics, for example comprising Al (aluminum), Ag (silver) or Cr (chromium), the recesses 201 constitute electrical connection channels for the light emitting diode, and in operation the current is uniformly distributed in the light emitting epitaxial stack through the recesses 201.
The first patterned metal layer 410 extends to the recess sidewall 202 in the horizontal direction, so as to increase the reflection area of the metal reflector as much as possible, the arrow in the figure is a light path, light is emitted to the reflector of the first patterned metal layer 410 near the recess, and is reflected to the position of the recess where the third patterned metal layer 430 is filled to reflect light again and emit light from the light-emitting surface, so as to achieve the effect of enhancing the light extraction efficiency.
Referring to FIG. 2, which is a comparison of experimental data for brightness using the mirror design with enlarged first patterned metal layer 410 of example one and the conventional mirror design, each triangle represents the brightness or forward voltage V of a conventional core particlefEach square represents the brightness or the forward voltage of the embodiment, the forward voltage is the use voltage, the abscissa is the wavelength, and the experiment shows that the first embodiment of the present invention does not change the use voltage V basically in the led structurefUnder the condition (2), the brightness Lop of the LED is improved by more than 1 percent on average.
In one embodiment, the dielectric 500 covered by the recess sidewall 202 is a reflective material such as DBR, and a distributed bragg reflector is constructed by replacing silicon oxide with DBR to reduce the light loss caused by absorption of silicon oxide, and the DBR and the reflective third patterned metal layer 430 form a total reflection mirror structure.
In some variations of the first embodiment, the first dielectric layer 510, such as SiO, covers the recess sidewalls 2022Or SiN or DBR reflective layer, the third patterned metal layer 430 filled in the recess 201 for electrical connection is a reflective metal, the reflective metal includes, for example, Ag (silver), Al (aluminum), Cr (chromium), or AlCr (aluminum chromium alloy), the reflective metal and the medium form a total reflector ODR, light is emitted to the reflector near the recess sidewall 202, reflected to the reflective metal material in the recess, and then reflected again to emit light from the light emitting surface.
In these variant embodiments, due to the presence of the transparent first insulating dielectric layer 510 and the second insulating dielectric layer 520, such as silicon dioxide or silicon nitride, a portion of light is transmitted to the substrate through the insulating medium and absorbed by the substrate 100, resulting in light loss, and in order to solve the above problem, the present modified embodiment is designed to select a reflective metal as the third patterned metal layer 430 filling the recess 201, after filling the recess 201 with the third patterned metal layer 430, the third patterned metal layer continues to extend in the horizontal direction on the surface of the second insulating dielectric layer 520, and at least substantially covers or completely covers the entire area under the light-emitting epitaxial stack, so as to achieve the effect of improving the reflected light by covering the entire surface with the reflective metal, as shown in fig. 3, in the figure, Z is the test data of the filling metal with the whole surface covered with the reflection, and in the figure, Y is the test data of the conventional structure, so that the brightness of the modified embodiment is obviously improved.
In the second embodiment of the present invention, the difference from the first embodiment is that a transparent material layer is provided between the first patterned metal layer 410 and the light-emitting epitaxial stack, and the transparent material layer is, for example, a transparent insulating layer, a transparent conductive layer, or a combination thereof.
Referring to fig. 4, specifically, in some modified embodiments of the second embodiment, a transparent insulating layer 610 is taken as an example of the transparent material layer, that is, the transparent insulating layer 610 functioning as a current blocking layer is disposed between the first patterned metal layer 410 and the second semiconductor layer 220, and the first patterned metal layer 410 covers the transparent insulating layer 610 and is electrically contacted to the second semiconductor layer 220 through the trench of the transparent insulating layer 610.
Referring to fig. 5, the transparent insulating layer 610 is designed to be a porous structure, and the transparent insulating layer 610 plays a role of current spreading by constructing a current path, thereby avoiding the problem of current concentration. In the above modified embodiment, the transparent insulating layer 610 is designed to be patterned, for example, the transparent insulating layer 610 with holes is designed, and the metal of the first patterned metal layer 410 penetrates into the holes to contact with the second semiconductor layer 220.
Referring to fig. 6 and 7, a transparent conductive layer 620 is disposed between the transparent insulating layer 610 and the second semiconductor layer 220 based on the above-described design of the porous transparent insulating layer 610.
Referring to fig. 8, from experimental data, the brightness of the structure where the first patterned metal layer 410 and the porous transparent insulating layer 610 in combination with the transparent conductive layer 620 are in contact with the second semiconductor layer 220 is averagely improved by more than 9% compared with the non-porous design, which greatly improves the chip brightness, and the forward voltage under the working condition is reduced by nearly 1% due to the good current distribution characteristic.
Referring to fig. 9, in some variations of the second embodiment, the first insulating dielectric layer 510 and the second insulating dielectric layer 520 may be made of the same material or different materials, and taking the transparent material layer as the transparent conductive layer 620 as an example, and the transparent conductive layer 620 is ITO as an example, when the light emitting diode operates, current is uniformly distributed in the light emitting epitaxial stack layer through the transparent conductive layer 620, and the transparent conductive layer 620 is beneficial to improving current distribution and improving ohmic contact effect.
Referring to fig. 10, in some variations of the second embodiment, the transparent material layer is composed of a transparent insulating layer 610 and a transparent conductive layer 620, the transparent conductive layer 620 is adjacent to the first patterned metal layer 410, the transparent insulating layer 610 is located between the transparent conductive layer 620 and the second semiconductor layer 220, the transparent insulating layer 610 has a plurality of holes 611, and the transparent conductive layer 620 is in contact with the second semiconductor layer 220 through the holes 611.
Referring to fig. 11, in a third embodiment of the present invention, an insulating reflective layer 630 is included between the first patterned metal layer 410 and the light emitting epitaxial stack, the insulating reflective layer 630 is made of a material such as DBR, and a total reflection mirror is formed by using the reflective action of the DBR and the first patterned metal layer 410, the insulating reflective layer 630 has a plurality of through holes 631 or trenches, and the first patterned metal layer 410 contacts the second semiconductor layer 220 through the through holes 631 or trenches.
Referring to fig. 12, in some variations of the third embodiment, a transparent conductive material is disposed between the insulating reflective layer 630 and the first patterned metal layer 410, and a transparent conductive layer 620 composed of the transparent conductive material is in contact with the second semiconductor layer 220 through a via 631 or a trench on the DBR, similar to the design of the second embodiment. The first patterned metal layer 410 is electrically connected to the second semiconductor layer 220 through the transparent conductive layer 620.
Referring to fig. 13, in some variations of the third embodiment, a porous insulating reflective layer 630 is provided, a transparent conductive layer 620 is provided between the insulating reflective layer 630 and the second semiconductor layer 220, the first patterned metal layer 410 fills the holes of the insulating reflective layer 630, and the metal is connected to the transparent conductive layer 620 through the holes.
However, the above description is only a preferred embodiment of the present invention, and the scope of the present invention should not be limited thereby, and all the simple equivalent changes and modifications made according to the claims and the contents of the patent specification should be included in the scope of the present invention.
Claims (19)
1. A light emitting diode comprising:
a light emitting epitaxial stack comprising a first semiconductor layer, an active layer and a second semiconductor layer having corresponding first and second surfaces;
the first patterned metal layers are formed on one side of the second surface of the light-emitting epitaxial lamination, and a first insulating medium layer is arranged between the first patterned metal layers;
a second patterned metal layer formed at least on a surface of the first patterned metal layer remote from the light-emitting epitaxial stack;
the electric mobility of the first graphical metal layer is larger than that of the second graphical metal layer;
wherein the second patterned metal layer does not completely cover or just covers the surface of the first patterned metal layer away from the light-emitting epitaxial stack.
2. The light-emitting diode of claim 1, wherein the first patterned metal layer comprises a metal reflective layer and the second patterned metal layer comprises a passivation protective layer.
3. The led of claim 1, wherein the first patterned metal layer comprises Ag or Al and the second patterned metal layer comprises Ti, TiW, Ni, Rh, Pt or Au.
4. The light-emitting diode of claim 1, wherein the first insulating medium layer comprises a DBR or a transparent insulating medium.
5. A light emitting diode according to claim 1 wherein the surface of the first patterned metal layer remote from the light emitting epitaxial stack is covered with a second dielectric layer and/or a second patterned metal layer.
6. A light-emitting diode according to claim 5, wherein the second insulating medium layer comprises a DBR or a transparent insulating medium.
7. The light-emitting diode of claim 5, wherein the side surfaces of the second patterned metal layer and the surface away from the first patterned metal layer are provided with a second insulating dielectric layer.
8. The light-emitting diode of claim 5, wherein the second patterned metal layer is disposed between the second dielectric layer and the first patterned metal layer.
9. A light-emitting diode according to claim 5, wherein the light-emitting epitaxial stack has a recess extending from the second semiconductor layer to the first semiconductor layer, the sidewall of the recess is covered with the first insulating dielectric layer and/or the second insulating dielectric layer, the recess is filled with the third patterned metal layer, and the recess forms an electrical connection channel of the light-emitting diode.
10. The light-emitting diode of claim 9, wherein the third patterned metal layer is a reflective metal.
11. The light-emitting diode of claim 9, wherein the third patterned metal layer extends horizontally after filling the recess to cover at least a backside of the second insulating dielectric layer.
12. The led of claim 9, wherein the third patterned metal layer comprises Al or Ag.
13. The light-emitting diode of claim 9, wherein the first patterned metal layer extends horizontally to the sidewalls of the recess.
14. The light-emitting diode of claim 1, wherein a transparent material layer is disposed between the first patterned metal layer and the light-emitting epitaxial stack.
15. The light-emitting diode of claim 14, wherein the first patterned metal layer encapsulates the transparent material layer.
16. The light-emitting diode according to claim 14, wherein the transparent material layer comprises a transparent conductive layer or a transparent insulating layer.
17. The light-emitting diode of claim 1, wherein the first patterned metal layer and the light-emitting epitaxial stack have an insulating reflective layer therebetween.
18. A light emitting diode according to claim 1 wherein the light emitting epitaxial stack is of gallium nitride based epitaxial material.
19. A luminaire comprising the light-emitting diode according to any one of claims 1 to 18.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920263680.4U CN209859970U (en) | 2019-03-01 | 2019-03-01 | Light-emitting diode and lamp |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920263680.4U CN209859970U (en) | 2019-03-01 | 2019-03-01 | Light-emitting diode and lamp |
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| Publication Number | Publication Date |
|---|---|
| CN209859970U true CN209859970U (en) | 2019-12-27 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920263680.4U Active CN209859970U (en) | 2019-03-01 | 2019-03-01 | Light-emitting diode and lamp |
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| CN (1) | CN209859970U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111341900A (en) * | 2020-04-24 | 2020-06-26 | 吉安市木林森显示器件有限公司 | Novel LED lamp bead capable of preventing electromigration |
-
2019
- 2019-03-01 CN CN201920263680.4U patent/CN209859970U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111341900A (en) * | 2020-04-24 | 2020-06-26 | 吉安市木林森显示器件有限公司 | Novel LED lamp bead capable of preventing electromigration |
| CN111341900B (en) * | 2020-04-24 | 2021-07-02 | 吉安市木林森显示器件有限公司 | Prevent LED lamp pearl of electromigration |
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