CN111341900A - Novel LED lamp bead capable of preventing electromigration - Google Patents
Novel LED lamp bead capable of preventing electromigration Download PDFInfo
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- CN111341900A CN111341900A CN202010334167.7A CN202010334167A CN111341900A CN 111341900 A CN111341900 A CN 111341900A CN 202010334167 A CN202010334167 A CN 202010334167A CN 111341900 A CN111341900 A CN 111341900A
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- 239000011324 bead Substances 0.000 title claims abstract description 71
- 238000003466 welding Methods 0.000 claims abstract description 94
- 229910052751 metal Inorganic materials 0.000 claims abstract description 37
- 239000002184 metal Substances 0.000 claims abstract description 35
- 229910000679 solder Inorganic materials 0.000 claims abstract description 12
- 239000007787 solid Substances 0.000 claims description 13
- 239000000084 colloidal system Substances 0.000 claims description 4
- 229910021645 metal ion Inorganic materials 0.000 abstract description 21
- 230000005012 migration Effects 0.000 abstract description 17
- 238000013508 migration Methods 0.000 abstract description 17
- 238000009413 insulation Methods 0.000 abstract description 3
- 230000005684 electric field Effects 0.000 description 21
- 230000009471 action Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a novel LED lamp bead capable of preventing electromigration, which comprises a lamp bead bracket, a metal functional area communicated with a power supply and a blue-green die bonding functional area which are independently arranged, wherein the metal functional area comprises a blue lamp secondary welding functional area, a green lamp secondary welding functional area, a red lamp electrode functional area and a wafer common polarity secondary welding functional area, the power supplies connected with the blue lamp secondary welding functional area, the green lamp secondary welding functional area and the red lamp electrode functional area are the same electrical pole, the power supply connected with the wafer common polarity secondary welding functional area is the other electrical pole, the red lamp electrode functional area is provided with the red die bonding functional area, the blue lamp secondary welding functional area, the green lamp secondary welding functional area, the red lamp electrode functional area and the wafer common polarity secondary welding functional area are arranged around the blue-green die bonding functional area, an insulation gap is arranged between the blue-green lamp secondary welding functional area and the wafer common polarity secondary welding functional area, and solder masks are arranged between the blue-green lamp secondary welding functional area, the green lamp secondary welding functional area and the wafer common polarity secondary welding functional area, effectively prevent the metal ion migration between the metal functional areas.
Description
[ technical field ] A method for producing a semiconductor device
The invention relates to the technical field of LED lighting, in particular to a novel LED lamp bead capable of preventing electromigration.
[ background of the invention ]
Along with the requirement of people on high definition of the display screen, the development of products with small spacing between the display screen is rapid, and the spacing is smaller. However, the quality problems such as electromigration and the like generally exist in the current small-spacing products. Electromigration phenomenon mainly shows the metal ion migration between the metal functional areas in the LED lamp bead support.
In the existing LED lamp bead in the current market, a solid crystal area of an RGB wafer on a support is generally a whole and is conducted with a bottom pin. When the power is on, any two electrically different metal functional regions are equivalent to two electrodes of an electric field, and the electric field is formed by adding a dielectric medium between the two electrodes. And the lamp pearl of present booth apart from product, owing to overall dimension restriction and the regional area requirement of inside solid brilliant bonding wire, leads to two metal function district spaced apart distance also to be limited, is less than 200um usually. As can be seen from E ═ U/D, the electric field intensity E increases as the distance D between the two electrodes is closer. When water vapor (particularly water vapor containing halogen element ions such as chloride ions) permeates into the LED lamp bead, metal elements such as Cu and Ag of the support are easily electrolyzed into metal ions under the action of an electric field, and the metal ions at the electrode of the support can migrate along the direction of the electric field. The higher the electric field intensity is, the higher the metal ion migration is accelerated, so that the abnormity of electric leakage or short circuit of the lamp bead is caused.
[ summary of the invention ]
The invention aims to provide a novel LED lamp bead capable of preventing electromigration, and solves the problem of electric leakage or short circuit of the lamp bead caused by metal ion migration between metal functional regions in an LED lamp bead support.
In order to solve the above problems, the present invention provides the following technical solutions:
a novel LED lamp bead capable of preventing electromigration comprises a lamp bead support, a metal functional area which is arranged on the front face of the lamp bead support and is communicated with a power supply, and a blue-green die bonding functional area which is arranged on the front face of the lamp bead support and is independently provided for installing and fixing a blue lamp wafer and a green lamp wafer, wherein the metal functional area comprises a blue lamp secondary welding functional area, a green lamp secondary welding functional area, a red lamp electrode functional area and a wafer common polarity secondary welding functional area, the power supplies connected with the blue lamp secondary welding functional area, the green lamp secondary welding functional area and the red lamp electrode functional area are the same electrical polarity, the power supply connected with the wafer common polarity secondary welding functional area is the other electrical polarity, the red lamp electrode functional area is provided with a red die bonding functional area for installing and fixing a red lamp wafer, the blue lamp secondary welding functional area, the green lamp secondary welding functional area, the red lamp electrode functional area and the wafer common polarity secondary welding functional area are arranged around the blue-green die bonding functional area, and an insulation channel gap is arranged between the blue-green die bonding functional area, solder masks are arranged among the blue-green die bonding functional area, the blue lamp secondary welding functional area, the green lamp secondary welding functional area and the wafer public polarity secondary welding functional area.
The novel LED lamp bead capable of preventing electromigration is characterized in that the blue lamp secondary welding functional area and the green lamp secondary welding functional area are arranged on the same side of the blue-green die bonding functional area, the wafer public polarity secondary welding functional area is arranged on the other side of the blue-green die bonding functional area, and the red die bonding functional area on the red lamp electrode functional area is arranged above the blue-green die bonding functional area and is linearly arranged with the blue-green die bonding functional area.
The novel LED lamp bead capable of preventing electromigration is characterized in that through holes are formed in the connection positions of the blue lamp secondary welding functional area, the green lamp secondary welding functional area, the red lamp electrode functional area and the wafer common polarity secondary welding functional area and the power supply, and solder masks are arranged around the through holes.
The novel LED lamp bead capable of preventing electromigration is characterized in that pins electrically connected with the corresponding metal functional areas through the through holes are arranged on the back of the lamp bead support, and the pins comprise a first pin electrically connected with a blue lamp secondary welding functional area, a second pin electrically connected with a green lamp secondary welding functional area, a third pin electrically connected with a red lamp electrode functional area and a fourth pin electrically connected with a wafer common polarity secondary welding functional area.
The novel LED lamp bead capable of preventing electromigration is characterized in that the metal functional area and the blue-green die bonding functional area are two groups, the blue lamp secondary welding functional area is fixedly connected into a whole and shares a through hole, and the green lamp secondary welding functional area is fixedly connected into a whole and shares a through hole.
The novel LED lamp bead capable of preventing electromigration is characterized in that the back surface of the lamp bead support is respectively connected with two third pins of the red lamp electrode functional area through the through hole in an electric connection mode to form a whole.
The novel LED lamp bead capable of preventing electromigration is characterized in that ink is filled among the first pin, the second pin, the third pin and the fourth pin at the back of the lamp bead support.
The novel LED lamp bead capable of preventing electromigration is characterized in that the thickness of the resistance welding layer is 10-20 μm, and the width is more than or equal to 50 μm.
According to the novel LED lamp bead capable of preventing electromigration, the front face of the lamp bead support further comprises a blue lamp wafer, a green lamp wafer and a red lamp wafer, the blue lamp wafer, the green lamp wafer and the red lamp wafer are electrically connected with the wafer common polarity secondary welding functional area through welding wires, and the blue lamp wafer and the green lamp wafer are respectively electrically connected with the blue lamp secondary welding functional area and the green lamp secondary welding functional area through welding wires.
According to the novel LED lamp bead capable of preventing electromigration, the front surface of the lamp bead support is covered with a layer of colloid which can completely cover the metal functional area, the blue-green die bonding functional area, the blue lamp wafer, the green lamp wafer and the red lamp wafer.
Compared with the prior art, the invention has the following advantages:
the novel LED lamp bead capable of preventing electromigration is used for installing and fixing a blue-green die bonding functional area of a blue lamp wafer and a green lamp wafer, is independently arranged, is not connected with any metal functional area communicated with a power supply, avoids the blue-green die bonding functional area from becoming an electrode of an electric field, greatly widens the distance between the wafer common polarity die bonding functional area and the blue lamp die bonding functional area as well as the green lamp die bonding functional area due to a special structure, weakens the electric field strength from the source, and effectively prevents metal ions from migrating under the action of the electric field; simultaneously, blue-green solid brilliant functional zone and the blue lamp on every side weld the functional zone two, green lamp welds the functional zone two and the wafer public polarity welds the functional zone between all be equipped with the solder mask, can effectively block the route of metal ion migration between the functional zone, play duplicate protection's effect, avoid effectively because of the condition emergence of lamp pearl electric leakage or short circuit that metal ion migration caused between the inside metal functional zone of lamp pearl support, improved the quality and the safety in utilization of LED lamp pearl.
[ description of the drawings ]
Fig. 1 is a schematic front structure view of a lamp bead support according to a first embodiment of the present invention.
Fig. 2 is a schematic front structure view of the bead support of the first embodiment of the present invention after a wafer is mounted thereon.
Fig. 3 is a schematic view of a back structure of a lamp bead support according to a first embodiment of the present invention.
Fig. 4 is a schematic front structure view of a lamp bead support according to a second embodiment of the invention.
Fig. 5 is a schematic front view of a lamp bead support according to a second embodiment of the present invention after a wafer is mounted thereon.
Fig. 6 is a schematic view of a back structure of a lamp bead support according to a second embodiment of the invention.
Fig. 7 is a cross-sectional view of a lamp bead support according to a second embodiment of the invention.
[ detailed description ] embodiments
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, belong to the scope of the present invention.
The first embodiment is as follows: referring to fig. 1 to 3, the present embodiment provides a novel LED lamp bead for preventing electromigration.
As shown in fig. 1, the present embodiment includes a lamp bead support 1, a metal functional area 3 disposed on the front surface of the lamp bead support 1 and connected to a power supply, and a blue-green die-bonding functional area 4 disposed on the front surface of the lamp bead support 1 and independently configured for mounting and fixing a blue lamp chip and a green lamp chip, where the metal functional area 3 includes a blue lamp secondary welding functional area 31, a green lamp secondary welding functional area 32, a red lamp electrode functional area 33, and a chip common polarity secondary welding functional area 34, where the power supplies connected to the blue lamp secondary welding functional area 31, the green lamp secondary welding functional area 32, and the red lamp electrode functional area 33 are the same electrical polarity, the power supply connected to the chip common polarity secondary welding functional area 34 is the other electrical polarity, and if the power supplies connected to the blue lamp secondary welding functional area 31, the green lamp secondary welding functional area 32, and the red lamp electrode functional area 33 are the positive polarity, the power supply connected to the chip common polarity secondary welding functional area 34 is the negative polarity, if the power supply connected with the blue lamp secondary welding functional area 31, the green lamp secondary welding functional area 32 and the red lamp electrode functional area 33 is a negative electrode, the power supply connected with the wafer common polarity secondary welding functional area 34 is a positive electrode; the red lamp electrode functional area 33 is provided with a red die bonding functional area 331 for installing and fixing a red lamp wafer, the blue lamp secondary welding functional area 31, the green lamp secondary welding functional area 32, the red lamp electrode functional area 33 and the wafer common polarity secondary welding functional area 34 are arranged around the blue-green die bonding functional area 4, and an insulation channel gap is arranged between the blue-green die bonding functional area 4 and the blue-green die bonding functional area 4, so that the blue-green die bonding functional area 4 forms a unique isolated island and is not connected with any metal functional area which is conducted with a power supply, the blue-green die bonding functional area 4 is prevented from becoming an electrode of an electric field, the special structure of the red-green die bonding functional area greatly widens the distance between the wafer common polarity secondary welding functional area 34 and the blue lamp secondary welding functional area 31 and the green lamp secondary welding functional area 32, the electric field intensity is weakened from the source, and metal ion migration under the action of the electric field is effectively prevented.
Simultaneously, blue-green solid brilliant functional zone 4 and the blue lamp on every side weld functional zone 31, green lamp two weld functional zone 32 and wafer public polarity two weld the functional zone 34 between all be equipped with solder mask 5, blue lamp two weld functional zone 31, green lamp two weld functional zone 32, red lamp electrode functional zone 33 and wafer public polarity two weld functional zone 34 and power junction all be equipped with through-hole 6, through-hole 6 all be equipped with solder mask 5 around, solder mask 5 can effectively block the route of metal ion migration between the functional zone, play the effect of dual protection, avoid effectively because of the condition emergence of the lamp pearl electric leakage or the short circuit that metal ion migration caused between the inside metal functional zone of lamp pearl support, improved the quality and the safety in utilization of LED lamp pearl.
Preferably, the thickness of the solder mask layer 5 in this embodiment is 10-20 μm, and the width is greater than or equal to 50 μm, which is beneficial to blocking the metal ion migration path between the functional regions and obtaining a better blocking effect.
Further, the blue lamp two welding functional area 31 and the green lamp two welding functional area 32 are arranged on the same side of the blue-green die bonding functional area 4, the wafer public polarity two welding functional area 34 is arranged on the other side of the blue-green die bonding functional area 4, the red die bonding functional area 331 on the red lamp electrode functional area 33 is arranged above the blue-green die bonding functional area 4 and is linearly arranged with the blue-green die bonding functional area 4, so that the distance between an anode electric field and a cathode electric field is enlarged, and metal ion migration under the action of the electric field is effectively prevented.
As shown in fig. 3, the back of the lamp bead support 1 is provided with pins 7 electrically connected to the corresponding metal functional regions 3 through the through holes 6, and the pins 7 include a first pin 71 electrically connected to the blue lamp second welding functional region 31, a second pin 72 electrically connected to the green lamp second welding functional region 32, a third pin 73 electrically connected to the red lamp electrode functional region 33, and a fourth pin 74 electrically connected to the wafer common polarity second welding functional region 34. The pin at the back of the lamp bead support 1 is only electrically connected with the corresponding metal functional area 3 and is not connected with the blue-green solid crystal functional area 4, so that the blue-green solid crystal functional area 4 is ensured not to become an electrode in an electric field and to generate metal ion migration with the metal functional area 3 around, and the condition of lamp bead electric leakage or short circuit caused by metal ion migration between the metal functional areas inside the lamp bead support is effectively avoided.
As shown in fig. 2, the front surface of the lamp bead support 1 further includes a blue lamp wafer 21, a green lamp wafer 22 and a red lamp wafer 23, the blue lamp wafer 21, the green lamp wafer 22 and the red lamp wafer 23 are all electrically connected to a wafer common polarity dual-bonding functional region 34 through bonding wires, and the blue lamp wafer 21 and the green lamp wafer 22 are respectively electrically connected to the blue lamp dual-bonding functional region 31 and the green lamp dual-bonding functional region 32 through bonding wires. Blue lamp wafer 21, green lamp wafer 22 only pass through the bonding wire and link to each other with metal function area 3, thereby further ensure that blue-green solid brilliant function area 4 can not become an electrode in the electric field and take place metal ion migration with metal function area 3 around, improved the quality and the safety in utilization of LED lamp pearl.
Further, the through holes 6 are filled with printing ink, the front surface of the lamp bead support 1 is covered with a layer of colloid 8 which can completely cover the metal functional area 3, the blue-green die bond functional area 4, the blue lamp wafer 21, the green lamp wafer 22 and the red lamp wafer 23, as shown in fig. 7, the colloid is beneficial to preventing water vapor from permeating into the LED lamp beads, and metal elements such as Cu and Ag of the support are electrolyzed into metal ions under the action of an electric field to generate metal migration.
Example two: referring to fig. 4 to 7, the embodiment provides a novel LED lamp bead for preventing electromigration.
The difference between the first embodiment and the second embodiment lies in that the metal functional area 3 and the blue-green die bonding functional area 4 are both two groups, as shown in fig. 4 and 5, because the two blue lamp secondary welding functional areas 31 are fixedly connected into a whole and share one through hole 6, and the two green lamp secondary welding functional areas 32 are fixedly connected into a whole and share one through hole 6, the number of corresponding pins is reduced from eight to six, and the cost of lamp bead mounting at an application end is effectively saved; meanwhile, in order to facilitate the control of an application end, the two blue lamp two-welding functional areas 31 on the front surface of the lamp bead support are electrically conducted into a whole through the through hole 6, the two green lamp two-welding functional areas 32 are electrically conducted into a whole through the through hole 6, so that only one blue lamp two-welding functional area 31 or one green lamp two-welding functional area 32 needs to be electrified, the other blue lamp two-welding functional area 31 or the other green lamp two-welding functional area 32 can be electrified, as shown in fig. 6, the back surface of the lamp bead support 1 is respectively and electrically connected with the two red lamp electrode functional areas 33 through the two third pins 73 electrically connected with the through hole 6, and the two red lamp electrode functional areas 33 can be electrified; in addition, two sets of metal functional areas 3 and the blue-green die bonding functional area 4 are combined to form a two-in-one LED lamp bead, ink is filled among the first pin 71, the second pin 72, the third pin 73 and the fourth pin 74 at the back of the lamp bead support 1, the filled ink can effectively prevent the short circuit between the part of the conductive connection of the two third pins 73 and the first pin 71 and the second pin 72 when tin is applied to the application end, and the safety of the LED lamp bead is improved.
The novel LED lamp bead capable of preventing electromigration is used for installing and fixing a blue-green die bonding functional area of a blue lamp wafer and a green lamp wafer, is independently arranged, is not connected with any metal functional area communicated with a power supply, avoids the blue-green die bonding functional area from becoming an electrode of an electric field, greatly widens the distance between the wafer common polarity die bonding functional area and the blue lamp die bonding functional area as well as the green lamp die bonding functional area due to a special structure, weakens the electric field strength from the source, and effectively prevents metal ions from migrating under the action of the electric field; simultaneously, blue-green solid brilliant functional zone and the blue lamp on every side weld the functional zone two, green lamp welds the functional zone two and the wafer public polarity welds the functional zone between all be equipped with the solder mask, can effectively block the route of metal ion migration between the functional zone, play duplicate protection's effect, avoid effectively because of the condition emergence of lamp pearl electric leakage or short circuit that metal ion migration caused between the inside metal functional zone of lamp pearl support, improved the quality and the safety in utilization of LED lamp pearl.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (10)
1. The utility model provides a prevent electromigration's novel LED lamp pearl which characterized in that: including lamp pearl support (1), locate lamp pearl support (1) openly and the metal function district (3) of intercommunication power and locate lamp pearl support (1) openly and independently set up blue-green solid brilliant function area (4) that are used for installing fixed blue lamp wafer and green lamp wafer, metal function district (3) including blue lamp two weld function area (31), green lamp two weld function area (32), red lamp electrode function area (33) and wafer public polarity two weld function area (34), blue lamp two weld function area (31), green lamp two weld function area (32), red lamp electrode function area (33) the power of connecting be same electric pole, wafer public polarity two weld function area (34) the power of connecting be another electric pole, red lamp electrode function area (33) on be equipped with red solid brilliant function area (331) that are used for installing fixed red lamp wafer, blue lamp two weld function area (31), Two function areas (32) of welding of green light, red light electrode function area (33) and two function areas (34) of welding of wafer public polarity are located blue-green solid brilliant function area (4) around and with blue-green solid brilliant function area (4) between be equipped with insulating channel clearance, blue-green solid brilliant function area (4) and two function areas (31) of welding of blue light on every side, two function areas (32) of welding of green light and two function areas (34) of welding of wafer public polarity between all be equipped with solder mask (5).
2. The electromigration-resistant novel LED lamp bead as set forth in claim 1, wherein: the blue lamp secondary welding functional area (31) and the green lamp secondary welding functional area (32) are arranged on the same side of the blue-green die bonding functional area (4), the wafer public polarity secondary welding functional area (34) is arranged on the other side of the blue-green die bonding functional area (4), and the red die bonding functional area (331) on the red lamp electrode functional area (33) is arranged above the blue-green die bonding functional area (4) and is linearly arranged with the blue-green die bonding functional area (4).
3. The electromigration-resistant novel LED lamp bead as set forth in claim 1, wherein: the blue lamp secondary welding functional area (31), the green lamp secondary welding functional area (32), the red lamp electrode functional area (33) and the joint of the wafer public polarity secondary welding functional area (34) and a power supply are provided with through holes (6), and a solder mask layer (5) is arranged around each through hole (6).
4. The electromigration-resistant novel LED lamp bead as set forth in claim 3, wherein: the back of the lamp bead support (1) is provided with pins (7) which are electrically connected with the corresponding metal functional area (3) through holes (6), and the pins (7) comprise first pins (71) which are electrically connected with a blue lamp secondary welding functional area (31), second pins (72) which are electrically connected with a green lamp secondary welding functional area (32), third pins (73) which are electrically connected with a red lamp electrode functional area (33) and fourth pins (74) which are electrically connected with a wafer common polarity secondary welding functional area (34).
5. The electromigration-resistant novel LED lamp bead as set forth in claim 4, wherein: the metal functional area (3) and the blue-green die bonding functional area (4) are both two groups, the two blue lamp secondary welding functional areas (31) are fixedly connected into a whole and share one through hole (6), and the two green lamp secondary welding functional areas (32) are fixedly connected into a whole and share one through hole (6).
6. The electromigration-resistant novel LED lamp bead as set forth in claim 5, wherein: the back of the lamp bead support (1) is respectively connected with two third pins (73) of the red lamp electrode functional areas (33) through the through holes (6) in an electric connection mode to form a whole.
7. The electromigration-resistant novel LED lamp bead as set forth in claim 6, wherein: ink is filled among the first pin (71), the second pin (72), the third pin (73) and the fourth pin (74) on the back of the lamp bead support (1).
8. The electromigration-resistant novel LED lamp bead as set forth in claim 1, wherein: the thickness of the solder mask layer (5) is 10-20 μm, and the width is more than or equal to 50 μm.
9. The electromigration-resistant novel LED lamp bead as set forth in any one of claims 1 to 8, wherein: the front surface of the lamp bead support (1) further comprises a blue lamp wafer (21), a green lamp wafer (22) and a red lamp wafer (23), the blue lamp wafer (21), the green lamp wafer (22) and the red lamp wafer (23) are electrically connected with a wafer common polarity secondary welding functional area (34) through bonding wires, and the blue lamp wafer (21) and the green lamp wafer (22) are respectively electrically connected with a blue lamp secondary welding functional area (31) and a green lamp secondary welding functional area (32) through bonding wires.
10. The electromigration-resistant novel LED lamp bead as set forth in claim 9, wherein: the front surface of the lamp bead support (1) is covered with a layer of colloid (8) which can completely cover the metal functional area (3), the blue-green die bonding functional area (4), the blue lamp wafer (21), the green lamp wafer (22) and the red lamp wafer (23).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010334167.7A CN111341900B (en) | 2020-04-24 | 2020-04-24 | Prevent LED lamp pearl of electromigration |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010334167.7A CN111341900B (en) | 2020-04-24 | 2020-04-24 | Prevent LED lamp pearl of electromigration |
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| CN111341900A true CN111341900A (en) | 2020-06-26 |
| CN111341900B CN111341900B (en) | 2021-07-02 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023193315A1 (en) * | 2022-04-06 | 2023-10-12 | 厦门强力巨彩光电科技有限公司 | Full-color lamp bead, drive circuit, lamp panel and display module for led display screen |
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| CN206758433U (en) * | 2017-03-24 | 2017-12-15 | 永林电子有限公司 | A kind of four pin common cathode three-color LED encapsulating structures |
| CN207517722U (en) * | 2017-11-15 | 2018-06-19 | 安徽三安光电有限公司 | A kind of semiconductor light-emitting elements |
| CN209859970U (en) * | 2019-03-01 | 2019-12-27 | 厦门三安光电有限公司 | Light-emitting diode and lamp |
| CN209785933U (en) * | 2019-05-31 | 2019-12-13 | 广东长利光电科技有限公司 | Double-color non-polar two-pin LED lamp bead |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023193315A1 (en) * | 2022-04-06 | 2023-10-12 | 厦门强力巨彩光电科技有限公司 | Full-color lamp bead, drive circuit, lamp panel and display module for led display screen |
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| CN111341900B (en) | 2021-07-02 |
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Address after: 343000 No.288, Nantang Road, Jinggangshan economic and Technological Development Zone, Ji'an City, Jiangxi Province Patentee after: JIAN MULINSEN PHOTOELECTRICITY Co.,Ltd. Country or region after: China Address before: 343000 No.288, Nantang Road, Jinggangshan economic and Technological Development Zone, Ji'an City, Jiangxi Province Patentee before: Ji'an Mulinsen Display Co.,Ltd. Country or region before: China |