CN101937953A - GaN-based light emitting diode and preparation method thereof - Google Patents
GaN-based light emitting diode and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a GaN-based light emitting diode which comprises a substrate, a buffer layer arranged on the substrate, an intrinsic GaN layer directly epitaxially arranged on the buffer layer, an N-type doped GaN epitaxial layer provided with an N-type GaN graphical template structure, an InxGal-xN/AlaInbGa1-a-bN multiple quantum well, an AlyGal-yN or AlyGal-yN/AlaInbGa1-a-bN superlattic electronic blocking layer, a P-type GaN layer, an ITO contact layer, a P-type electrode and an N-type electrode, wherein the N-type GaN graphical substrate, the multiple quantum well, the superlattic electronic blocking layer and the P-type GaN layer are all in a curved surface structure. The invention strengthens the light extraction efficiency of the light emitting diode device, also realizes wide spectrum output of the light emitting diode and promotes the development of white light illumination.
Description
Technical field
The present invention relates to a kind of gallium nitride based light emitting diode, belong to technical field of semiconductors.
Background technology
The semiconductor lighting light-emitting diode has remarkable advantages such as life-span length, energy-conserving and environment-protective, be considered to the revolution of lighting technology again after incandescent lamp, fluorescent lamp, be the focus that semiconductor and lighting field are researched and developed and industry is paid close attention in the world at present, have great application prospect.
Semiconductor material with wide forbidden band gallium nitride (GaN) has excellent physics and chemical characteristic, and indium nitride (InN), aluminium nitride III group-III nitrides such as (AlN) are formed the energy gap of ternary, quaternary alloy and can be regulated continuously between 0.7～6.2eV, and the InAlGaN quaternary alloy of component all is a direct band gap arbitrarily, all has a wide range of applications in fields such as panchromatic demonstration, color laser printing, HIGH-DENSITY OPTICAL STORAGE, optical illumination, optical detection, subsurface communications.In recent years, the research of GaN based light-emitting diode has obtained huge progress, but at high-end demands of applications such as display screen, backlight, illuminations, still needs further to improve its luminous efficiency, to actively promote the development of white-light illuminating technology.
Existing gallium nitride based light emitting diode, its traditional structure is for being substrate with the sapphire, then in a side of Sapphire Substrate, one n type gallium nitride contact layer, an InGaN luminescent layer, a P type gallium nitride contact layer are set respectively successively from top to bottom, at last, on P type gallium nitride contact layer and n type gallium nitride contact layer, a positive electrode and negative electrode are set respectively.Gallium nitride based light emitting diode under this traditional structure, its luminescent layer mainly are with InGaN (In
xGa
1-xN, x=0～1) be multiple quantum trap (Multi-quantum Well) structure of potential well (PotentialWell), electronics and hole discharge photon in the potential well combination.
The GaN light-emitting diode active area of above-mentioned routine is generally planar structure, exist problems such as luminous total reflection loss, and the GaN based light-emitting diode many on sapphire (0001) face extension, the internal polarization electric field has limited the raising of luminous efficiency to the distribution important influence in electronics in the quantum well and hole.Therefore, the GaN based light-emitting diode also is difficult to enter the general illumination field at present, needs further to improve its light extraction efficiency, realizes wide spectrum output simultaneously, to promote the development of white-light illuminating.
Summary of the invention
The object of the invention provides a kind of gallium nitride based light emitting diode and preparation method thereof, with the light extraction efficiency of further raising light-emitting diode, realizes wide spectrum output simultaneously, promotes the development of white-light illuminating.
For achieving the above object, the technical solution used in the present invention is: a kind of gallium nitride based light emitting diode comprises:
One substrate;
Be located at the resilient coating on the substrate;
The direct intrinsic GaN layer of extension on resilient coating;
One N type Doped GaN epitaxial loayer is deposited on the intrinsic GaN layer; Described N type Doped GaN epitaxial loayer is provided with the graphical formwork structure of N type GaN;
One In
xGa
1-xN/Al
aIn
bGa
1-a-bThe N Multiple Quantum Well is grown on the graphical formwork structure of N type GaN;
One Al
yGa
1-yN or Al
yGa
1-yN/Al
aIn
bGa
1-a-bN superlattice electronic barrier layer is grown in In
xGa
1-xN/Al
aIn
bGa
1-a-bOn the N Multiple Quantum Well;
One P type GaN layer is grown in Al
yGa
1-yN or Al
yGa
1-yN/Al
aIn
bGa
1-a-bOn the N superlattice electronic barrier layer;
One ITO contact layer is located on the P type GaN layer;
On ITO contact layer and N type Doped GaN epitaxial loayer, P type electrode and N type electrode are set respectively;
The graphical formwork structure of described N type GaN, In
xGa
1-xN/Al
aIn
bGa
1-a-bN Multiple Quantum Well, Al
yGa
1-yN or Al
yGa
1-yN/Al
aIn
bGa
1-a-bN superlattice electronic barrier layer, and P type GaN layer is curved-surface structure.
In the technique scheme, described substrate is plane sapphire substrate, graphic sapphire substrate, gallium nitride substrate, silicon carbide substrates or silicon substrate.
Further technical scheme, the graphical formwork structure of described N type GaN is continuous yurt shape, and the distance between the diameter of yurt, height and the adjacent yurt is mated at interval mutually, and its magnitude extends to micron dimension from nanometer scale.
In the technique scheme, the gross thickness of described intrinsic GaN layer and N type Doped GaN epitaxial loayer is 3～7 μ m.This thickness depends on substrate type.
In the technique scheme, described In
xGa
1-xN/Al
aIn
bGa
1-a-bPotential well In in the N Multiple Quantum Well
xGa
1-xThe content x of In is 0.1～0.28 in the N layer, potential well In
xGa
1-xThe thickness of N layer is 1～4nm; Potential barrier Al
aIn
bGa
1-a-bAl content a is 0～0.3 in the N layer, and In content b is 0～0.25, and its thickness is 6～17nm.
In the technique scheme, described In
xGa
1-xN/Al
aIn
bGa
1-a-bThe periodicity of N Multiple Quantum Well is 5～12.
In the technique scheme, described Al
yGa
1-yN or Al
yGa
1-yN/Al
aIn
bGa
1-a-bN superlattice electronic barrier layer Al
yGa
1-yAl content y is 0.1～0.3 among the N, and its thickness is 20～40nm; Al
yGa
1-yN/Al
aIn
bGa
1-a-bAl content a is 0.1～0.3 in the N superlattice, and y is 0.1～0.3, and In content b is 0.1～0.25, and its thickness is 3～8nm.
The present invention asks for protection a kind of preparation method of gallium nitride based light emitting diode simultaneously, may further comprise the steps:
(1) grown buffer layer and intrinsic GaN layer and N type Doped GaN epitaxial loayer on substrate;
(2) adopt reactive ion etching method, holographic exposure method or electron beam exposure method on N type Doped GaN epitaxial loayer, to prepare the graphical formwork structure of N type GaN;
(3) extension In on the graphical formwork structure of N type GaN
xGa
1-xN/Al
aIn
bGa
1-a-bThe N Multiple Quantum Well;
(4) at In
xGa
1-xN/Al
aIn
bGa
1-a-bAl grows on the N Multiple Quantum Well
yGa
1-yN or Al
yGa
1-yN/Al
aIn
bGa
1-a-bN superlattice electronic barrier layer;
(5) at Al
yGa
1-yN or Al
yGa
1-yN/Al
aIn
bGa
1-a-bPreparation P type GaN layer on the N superlattice electronic barrier layer;
(6) evaporation or sputtering ITO contact layer;
(7) adopt the method for photoetching and evaporation or sputter to prepare N type electrode and P type electrode respectively;
The graphical formwork structure of described N type GaN, In
xGa
1-xN/Al
aIn
bGa
1-a-bN Multiple Quantum Well, Al
yGa
1-yN or Al
yGa
1-yN/Al
aIn
bGa
1-a-bN superlattice electronic barrier layer, and P type GaN layer is curved-surface structure.
In the technique scheme, described In
xGa
1-xN/Al
aIn
bGa
1-a-bPotential well In in the N Multiple Quantum Well
xGa
1-xThe content x of In is 0.1～0.28 in the N layer, potential well In
xGa
1-xThe thickness of N layer is 1～4nm; Potential barrier Al
aIn
bGa
1-a-bAl content a is 0～0.3 in the N layer, and In content b is 0～0.25, and its thickness is 6～17nm, described In
xGa
1-xN/Al
aIn
bGa
1-a-bThe periodicity of N Multiple Quantum Well is 5～12.
Working mechanism of the present invention is as follows: introduce graphical active area structure, can reduce or eliminate the quantum limit Stark effect that polarization field causes in semi-polarity or non-polar plane growing InGaN quantum well on the one hand, improve internal quantum efficiency and increase active area and can utilize area, strengthen the light extraction efficiency of LED device; Be combined with the difference of In growth rate on different crystal faces in the source region on the other hand, realize the wide spectrum output of LED device.
Because the employing of technique scheme, compared with prior art, the present invention has following advantage:
1. the present invention is provided with the graphical formwork structure of N type GaN on N type Doped GaN epitaxial loayer, and with In
xGa
1-xN/Al
aIn
bGa
1-a-bN Multiple Quantum Well, Al
yGa
1-yN or Al
yGa
1-yN/Al
aIn
bGa
1-a-bN superlattice electronic barrier layer, and P type GaN layer all is set to curved-surface structure, help to reduce or eliminate the quantum limit Stark effect that polarization field causes in the light-emitting diode, improve internal quantum efficiency and increase active area and can utilize area, strengthen the light extraction efficiency of LED device, realize the wide spectrum output of light-emitting diode simultaneously, promote the development of white-light illuminating.
2. the present invention combines the preparation of the graphical formwork structure of N type GaN with the MOCVD growth technology, the graphical active area structure GaN based light-emitting diode of invention helps further to improve the electro-optical efficiency of LED device, and its wide spectral characteristic also has important significance for theories and realistic meaning for white-light illuminating.
3. graphical active area array of the present invention has bigger surface area, helps the raising of LED device unit are luminous intensity and light extraction efficiency, can realize the wide spectrum output of LED device simultaneously again; Can be implemented in the active area structure of growing simultaneously on the non-polar plane of GaN or the semi-polarity face by graphical active area structure, reduce the influence of polarized electric field quantum well radiation efficient.
Description of drawings
Fig. 1 is the structural representation of the embodiment of the invention one.
Wherein: 1, substrate; 2, resilient coating; 31, intrinsic GaN layer; 32, N type Doped GaN epitaxial loayer 32; 4, In
xGa
1-xN/Al
aIn
bGa
1-a-bThe N Multiple Quantum Well; 5, superlattice electronic barrier layer; 6, P type GaN layer; 7, ITO contact layer; 8, P type electrode; 9, N type electrode.
Embodiment
Below in conjunction with drawings and Examples the present invention is further described:
Embodiment one
Referring to shown in Figure 1, a kind of gallium nitride based light emitting diode, its preparation method may further comprise the steps:
(1) substrate 1 as plane sapphire substrate, graphic sapphire substrate, gallium nitride substrate, silicon carbide substrates or silicon substrate on grown buffer layer 2 and intrinsic GaN layer 31 and N type Doped GaN epitaxial loayer 32; The gross thickness of intrinsic GaN layer and N type Doped GaN epitaxial loayer is 3～7 μ m, specifically depends on substrate type;
(2) adopt reactive ion etching method, holographic exposure method or electron beam exposure method on N type Doped GaN epitaxial loayer, to prepare the graphical formwork structure of N type GaN; The graphical formwork structure of this N type GaN is continuous yurt shape, and the distance between the diameter of yurt, height and the adjacent yurt is mated at interval mutually, and its magnitude extends to micron dimension from nanometer scale;
(3) extension In on the graphical formwork structure of N type GaN
xGa
1-xN/Al
aIn
bGa
1-a-bN Multiple Quantum Well 4; Described In
xGa
1-xN/Al
aIn
bGa
1-a-bPotential well In in the N Multiple Quantum Well
xGa
1-xThe content x of In is 0.1～0.28 in the N layer, potential well In
xGa
1-xThe thickness of N layer is 1～4nm; Potential barrier Al
aIn
bGa
1-a-bAl content a is 0～0.3 in the N layer, and In content b is 0～0.25, and its thickness is 6～17nm, described In
xGa
1-xN/Al
aIn
bGa
1-a-bThe periodicity of N Multiple Quantum Well is 5～12;
(4) at In
xGa
1-xN/Al
aIn
bGa
1-a-bAl grows on the N Multiple Quantum Well
yGa
1-yN or Al
yGa
1-yN/Al
aIn
bGa
1-a-bN superlattice electronic barrier layer 5;
(5) at Al
yGa
1-yN or Al
yGa
1-yN/Al
aIn
bGa
1-a-bPreparation P type GaN layer 6 on the N superlattice electronic barrier layer;
(6) evaporation or sputtering ITO contact layer 7;
(7) adopt the method for photoetching and evaporation or sputter to prepare N type electrode 9 and P type electrode 8 respectively;
The graphical formwork structure of described N type GaN, In
xGa
1-xN/Al
aIn
bGa
1-a-bN Multiple Quantum Well, Al
yGa
1-yN or Al
yGa
1-yN/Al
aIn
bGa
1-a-bN superlattice electronic barrier layer, and P type GaN layer is the curved-surface structure of continuous yurt shape.
Claims (9)
1. a gallium nitride based light emitting diode is characterized in that, comprising:
One substrate;
Be located at the resilient coating on the substrate;
The direct intrinsic GaN layer of extension on resilient coating;
One N type Doped GaN epitaxial loayer is deposited on the intrinsic GaN layer; Described N type Doped GaN epitaxial loayer is provided with the graphical formwork structure of N type GaN;
One In
xGa
1-xN/Al
aIn
bGa
1-a-bThe N Multiple Quantum Well is grown on the graphical formwork structure of N type GaN;
One Al
yGa
1-yN or Al
yGa
1-yN/Al
aIn
bGa
1-a-bN superlattice electronic barrier layer is grown in In
xGa
1-xN/Al
aIn
bGa
1-a-bOn the N Multiple Quantum Well;
-P type GaN layer is grown in Al
yGa
1-yN or Al
yGa
1-yN/Al
aIn
bGa
1-a-bOn the N superlattice electronic barrier layer;
One ITO contact layer is located on the P type GaN layer;
On ITO contact layer and N type Doped GaN epitaxial loayer, P type electrode and N type electrode are set respectively;
The graphical formwork structure of described N type GaN, In
xGa
1-xN/Al
aIn
bGa
1-a-bN Multiple Quantum Well, Al
yGa
1-yN or Al
yGa
1-yN/Al
aIn
bGa
1-a-bN superlattice electronic barrier layer, and P type GaN layer is curved-surface structure.
2. gallium nitride based light emitting diode according to claim 1 is characterized in that: described substrate is plane sapphire substrate, graphic sapphire substrate, gallium nitride substrate, silicon carbide substrates or silicon substrate.
3. gallium nitride based light emitting diode according to claim 1, it is characterized in that: the graphical formwork structure of described N type GaN is continuous yurt shape, distance between the diameter of yurt, height and the adjacent yurt is mated at interval mutually, and its magnitude extends to micron dimension from nanometer scale.
4. gallium nitride based light emitting diode according to claim 1 is characterized in that: the gross thickness of described intrinsic GaN layer and N type Doped GaN epitaxial loayer is 3～7 μ m.
5. gallium nitride based light emitting diode according to claim 1 is characterized in that: described In
xGa
1-xN/Al
aIn
bGa
1-a-bPotential well In in the N Multiple Quantum Well
xGa
1-xThe content x of In is 0.1～0.28 in the N layer, potential well In
xGa
1-xThe thickness of N layer is 1～4nm; Potential barrier Al
aIn
bGa
1-a-bAl content a is 0～0.3 in the N layer, and In content b is 0～0.25, and its thickness is 6～17nm.
6. gallium nitride based light emitting diode according to claim 1 is characterized in that: described In
xGa
1-xN/Al
aIn
bGa
1-a-bThe periodicity of N Multiple Quantum Well is 5～12.
7. gallium nitride based light emitting diode according to claim 1 is characterized in that: described Al
yGa
1-yN or Al
yGa
1-yN/Al
aIn
bGa
1-a-bN superlattice electronic barrier layer Al
yGa
1-yAl content y is 0.1～0.3 among the N, and its thickness is 20～40nm; Al
yGa
1-yN/Al
aIn
bGa
1-a-bAl content a is 0.1～0.3 in the N superlattice, and y is 0.1～0.3, and In content b is 0.1～0.25, and its thickness is 3～8nm.
8. the preparation method of a gallium nitride based light emitting diode is characterized in that, may further comprise the steps:
(1) grown buffer layer and intrinsic GaN layer and N type Doped GaN epitaxial loayer on substrate;
(2) adopt reactive ion etching method, holographic exposure method or electron beam exposure method on N type Doped GaN epitaxial loayer, to prepare the graphical formwork structure of N type GaN;
(3) extension In on the graphical formwork structure of N type GaN
xGa
1-xN/Al
aIn
bGa
1-a-bThe N Multiple Quantum Well;
(4) at In
xGa
1-xN/Al
aIn
bGa
1-a-bAl grows on the N Multiple Quantum Well
yGa
1-yN or Al
yGa
1-yN/Al
aIn
bGa
1-a-bN superlattice electronic barrier layer;
(5) at Al
yGa
1-yN or Al
yGa
1-yN/Al
aIn
bGa
1-a-bPreparation P type GaN layer on the N superlattice electronic barrier layer;
(6) evaporation or sputtering ITO contact layer;
(7) adopt the method for photoetching and evaporation or sputter to prepare N type electrode and P type electrode respectively;
The graphical formwork structure of described N type GaN, In
xGa
1-xN/Al
aIn
bGa
1-a-bN Multiple Quantum Well, Al
yGa
1-yN or Al
yGa
1-yN/Al
aIn
bGa
1-a-bN superlattice electronic barrier layer, and P type GaN layer is curved-surface structure.
9. the preparation method of gallium nitride based light emitting diode according to claim 8 is characterized in that: described In
xGa
1-xN/Al
aIn
bGa
1-a-bPotential well In in the N Multiple Quantum Well
xGa
1-xThe content x of In is 0.1～0.28 in the N layer, potential well In
xGa
1-xThe thickness of N layer is 1～4nm; Potential barrier Al
aIn
bGa
1-a-bAl content a is 0～0.3 in the N layer, and In content b is 0～0.25, and its thickness is 6～17nm, described In
xGa
1-xN/Al
aIn
bGa
1-a-bThe periodicity of N Multiple Quantum Well is 5～12.
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