CN105932121A - Three-dimensional LED epitaxial structure and preparation method thereof - Google Patents
Three-dimensional LED epitaxial structure and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 25
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 32
- 239000012159 carrier gas Substances 0.000 claims description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 14
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 12
- 229910052733 gallium Inorganic materials 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- 239000002073 nanorod Substances 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 abstract description 3
- 239000011258 core-shell material Substances 0.000 abstract description 2
- 238000003491 array Methods 0.000 abstract 5
- 239000010410 layer Substances 0.000 description 88
- 230000006798 recombination Effects 0.000 description 7
- 238000005215 recombination Methods 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 238000000605 extraction Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 230000005699 Stark effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000005701 quantum confined stark effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
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Abstract
The invention relates to the field of a semiconductor, and discloses an LED epitaxial structure. The LED epitaxial structure comprises a substrate and porous SiNx layers laminated on the substrate, and further comprises n-type GaN nano rod arrays formed in apertures of the SiNx layers, multi-quantum well layers which are successively laminated and wrap each surface of the GaN nano rod arrays, and a P-type GaN layer. The GaN nano rod arrays, the multi-quantum well layer wrapping each surface of the GaN nano rod arrays, and the P-type GaN layer form a three-dimensional core shell structure, the specific surface area is large, compared to a thin film material, more photons can be generated under the same current density, and the internal quantum efficiency of the LED epitaxial structure is improved. At the same time, a patterned substrate is unnecessary for growth of the GaN nano rod arrays, and the technical cost is low. The preparation method of the three-dimensional LED epitaxial structure is simple, is easy to implement and low in technical cost and can effectively guarantee the product yield.
Description
Technical field
The present invention relates to technical field of semiconductors, be specifically related to a kind of three-dimensional LED epitaxial structure and system thereof
Preparation Method.
Background technology
GaN base LED, as novel energy-conserving light source, is expected to the population for the whole world up to 1,500,000,000 and sends to light
Bright, but it wants to substitute general lighting comprehensively, and real comes into huge numbers of families, in addition it is also necessary to reduce further
Cost, improves luminous intensity and luminous efficiency.These are required for novel high-performance GaN base LED
Based on epitaxial structure research and development, thus carry out the research of GaN base New LED epitaxial structure and there is important meaning
Justice.
In recent years, GaN base LED has fully achieved industrialization process, but up to the present, produces
The LED epitaxial structure of industry is mostly based on two dimension GaN film, and along with to high-power, high
Brightness and the increasing day by day of white light LEDs demand, also expose increasing problem:
First, owing to there is bigger lattice mismatch and thermal mismatching coefficient, in the GaN of growth with substrate
The a large amount of dislocations existed form non-radiative recombination center, thus suppress internal quantum efficiency.Second, GaN base
Polarization is relatively suppressed, in making InGaN/GaN multi-quantum well active region present in semi-conducting material
Define built in field, create quantum confined Stark effect, i.e. make InGaN/GaN quantum
Trap energy band run-off the straight, causes electronics and hole to be spatially separating, and reduces electron-hole wave function
Overlapping, Carrier recombination probability reduces, and reduces internal quantum efficiency.3rd, due to auger recombination, current-carrying
Son leakage, carrier local, the reasons such as hole injection efficiency is low, along with the increase of Injection Current, its
Light efficiency can decline to a great extent, the most so-called efficiency rapid drawdown problem.4th, owing to existing due to each functional layer
Between exist total reflection, the light extraction efficiency of GaN base film LED is the most relatively low.5th, film LED
Emission wavelength is more single, is difficult to be directly realized by the colour light-emitting of single structure.
To this end, Chinese patent literature CN104112802A discloses outside a kind of AlGaInP light emitting diode
Prolonging sheet, its structure is: n-GaAs substrate Epitaxial growth n-GaAs nanometer rods core after patterning
Layer, then on n-GaAs nanometer rods sidewall successively epitaxial growth n-InAlP limiting layer,
(AlxGa1-x)0.5In0.5P/(AlyGa1-y)0.5In0.5P multiple quantum well active layer, p-InAlP limiting layer, p-GaP
Cover layer.Its preparation method is: use the method for metal organic chemical vapor deposition (MOCVD) to exist
The each layer of n-GaAs substrate Epitaxial growth.Above-mentioned epitaxial slice structure strengthens the restriction of carrier and can press down
The carrier processed recombination probability in interface and scattering probability.LED active region layer is grown in nanometer rods circle
Cylindrical surface, adds light-emitting area, can be greatly improved luminous efficiency.Semiconductor nanorods non-flat
The geometry in face can increase light extraction efficiency, and according to quantum constraint effect, straight by changing nanometer rods
Footpath, it is possible to achieve multicolor luminous.But, said structure have employed the higher patterned substrate of cost, with
Time this structure and preparation be primarily suitable for GaAs base red-light LED, its multicolor luminous can only be by changing
The diameter becoming nanometer rods realizes, it is impossible to realizes multicolor luminous in single nanometer rods, thus is difficulty with
The white light emission of LED.
Summary of the invention
To this end, to be solved by this invention be that existing LED epitaxial structure preparation cost is high, be difficult to realize
Multicolor luminous, the problem of white light emission.
For solving above-mentioned technical problem, the technical solution used in the present invention is as follows:
A kind of three-dimensional LED epitaxial structure of the present invention, is arranged on described including substrate and stacking
Porous SiN on substratexLayer；Also include being formed at described SiNxN-shaped GaN nanometer rods in layer hole
Array, stacks gradually the multiple quantum well layer and P being coated on the described each surface of GaN nanometer stick array
Type GaN layer.
Alternatively, described SiNxLayer is amorphous Si NxLayer, thickness is 5nm～15nm, and aperture is 50
Nm～300nm.
Alternatively, described GaN nanometer stick array is the GaN nanometer stick array of Si doping, and height is 2
μm～3 μm, a diameter of 50nm～300nm.
Alternatively, described GaN nanometer stick array has (0001) polar surface and/or (1-101) of nano-scale
Semi-polarity face and/or (1-100) non-polar plane.
Alternatively, described multiple quantum well layer is InGaN/GaN multiple quantum well layer, InGaN well layer thickness
For 2nm～5nm, GaN barrier layer thickness is 10nm～15nm, and the cycle is 5～10.
Alternatively, described multiple quantum well layer has (0001) polar surface and/or (1-101) half of nano-scale
Polar surface and/or (1-100) non-polar plane.
Alternatively, also including the AlN layer being formed directly on described substrate, thickness is 0nm～5nm；
Described p-type GaN layer is the p-type GaN layer of Mg doping, and thickness is 30nm～100nm.
The preparation method of three-dimensional LED epitaxial structure of the present invention, comprises the steps:
S1, on substrate formed porous SiNxLayer；
S2, at described SiNxLayer hole forms N-shaped GaN nanometer stick array；
S3, on the described each surface of GaN nanometer stick array formed multiple quantum well layer；
S4, on described multiple quantum well layer formed p-type GaN layer.
Alternatively, the step of formation AlN layer it is additionally included on described substrate before described step S1.
Alternatively, in described step S1, described SiNxThe growing method of layer is: silicon source is SiH4, nitrogen
Source is NH4, carrier gas be H2, growth temperature is 980 DEG C～1040 DEG C, and pressure is 133mbar growth
100s～200s；Close silicon source, at NH4Anneal under atmosphere 400s～600s；
In described step S2, the growing method of described GaN nanometer stick array is: with TMGa be gallium source,
SiH4For silicon source, NH3For nitrogen source, H2For carrier gas, growth temperature is 1020 DEG C～1070 DEG C, and pressure is
600mbar, V/III ratio is 10～200, grows 3600s-4800s；
In described step S3, the growing method of described multiple quantum well layer is: using TEGa as gallium source,
NH3As nitrogen source, N2As carrier gas, growth temperature is 800 DEG C～860 DEG C, and chamber pressure is
400mbar, grows 30s-60s, obtains GaN barrier layer；With TEGa be gallium source, TMIn be indium source,
NH3For nitrogen source, N2For carrier gas, growth temperature is 720 DEG C～780 DEG C, and chamber pressure is 400mbar,
Growth 30s-60s, obtains InGaN well layer；
In described step S4, the growing method of described p-type GaN layer is: using TEGa as gallium source,
NH3As nitrogen source, H2As carrier gas, growth temperature is 800 DEG C～860 DEG C, and chamber pressure is
400mbar, grows 30-60s.
The technique scheme of the present invention has the advantage that compared to existing technology
1, a kind of three-dimensional LED epitaxial structure described in the embodiment of the present invention, sets including substrate and stacking
Put porous SiN over the substratexLayer；Also include being formed at described SiNxN-shaped GaN in layer hole
Nanometer stick array, stacks gradually the MQW being coated on the described each surface of GaN nanometer stick array
Layer and p-type GaN layer.Described GaN nanometer stick array with cladding each of which surface multiple quantum well layer,
P-type GaN layer constitutes spatial nuclei shell structure, and specific surface area is big, compares thin-film material, at identical electricity
More number of photons can be produced under current density, improve the internal quantum efficiency of described LED epitaxial structure.
Meanwhile, the growth of described GaN nanometer rods is without patterned substrate, and process costs is low.
2, a kind of three-dimensional LED epitaxial structure described in the embodiment of the present invention, described GaN nanometer rods battle array
Row and core shell structure thereof have (0001) polar surface of nano-scale and/or (1-101) semi-polarity face and/
Or (1-100) non-polar plane, can effectively contain Stark effect, reduce polarized electric field, promote electronics
-hole-recombination probability, improves the internal quantum efficiency of LED epitaxial structure.
3, a kind of three-dimensional LED epitaxial structure described in the embodiment of the present invention, described porous SiNxLayer is not
But can be as the growth templates of described GaN nanometer stick array, additionally it is possible to effectively reduce the position of this structure
Dislocation density and the continued growth of dislocation, thus reduce the non-radiative recombination center of active area, improve LED
The internal quantum efficiency of epitaxial structure.
4, a kind of three-dimensional LED epitaxial structure described in the embodiment of the present invention, described GaN nanometer rods battle array
Arrange good periodic structure and can also further enhance the light extraction efficiency of LED epitaxial structure.
5, a kind of three-dimensional LED epitaxial structure described in the embodiment of the present invention, described InGaN/GaN is many
Quantum well layer, as luminous active area, has (0001) polar surface, (1-101) semi-polarity face and (1-100)
Non-polar plane, these different masks have different In content and trap thick, it is possible to be directly realized by full color
Luminous.
6, the preparation method of the three-dimensional LED epitaxial structure described in the embodiment of the present invention, comprises the steps:
S1, on substrate formed porous SiNxLayer；S2, at described SiNxLayer hole forms N-shaped GaN
Nanometer stick array；S3, on the described each surface of GaN nanometer stick array formed multiple quantum well layer；S4、
Described multiple quantum well layer is formed p-type GaN layer.The preparation method of described three-dimensional LED epitaxial structure
Simple easily enforcement, not only process costs is low, and can effectively ensure that product yield.
Accompanying drawing explanation
In order to make present disclosure be more likely to be clearly understood, being embodied as below according to the present invention
Example also combines accompanying drawing, and the present invention is further detailed explanation, wherein
Fig. 1 is the LED epitaxial structure structural representation described in the embodiment of the present invention；
In figure, reference is expressed as: 1-substrate, 2-AlN layer, 3-SiNxLayer, 4-GaN nanometer rods battle array
Row, 5-multiple quantum well layer, 6-P type GaN layer.
Detailed description of the invention
In order to make the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing to this
The embodiment of invention is described in further detail.
The present invention can be embodied in many different forms, and should not be construed as limited to set forth herein
Embodiment.On the contrary, it is provided that these embodiments so that the disclosure will be thorough and complete, and will be
The design of the present invention is fully conveyed to those skilled in the art, and the present invention will only be defined by the appended claims.
In the accompanying drawings, for clarity, layer and the size in region and relative size can be exaggerated.It is to be understood that
Be, when element such as layer, region or substrate be referred to as " being formed at " or " being arranged on " another element " on "
Time, this element can be arranged directly on another element described, or can also there is intermediary element.Phase
Instead, when element is referred to as on " being formed directly into " or " being set directly at " another element, do not exist
Intermediary element.
Embodiment
The present embodiment provides a kind of three-dimensional LED epitaxial structure, as it is shown in figure 1, include substrate 1 and
Stacking arranges porous SiN on substrate 1xLayer 3；Also include being formed at SiNxN-shaped in layer hole
GaN nanometer stick array 4, stacks gradually the volume being coated on each surface of GaN nanometer stick array 4
Sub-well layer 5 and p-type GaN layer 6.
GaN nanometer stick array 4 and the multiple quantum well layer 5 on each of which outer surface, p-type GaN layer 6
The spatial nuclei shell structure constituted, specific surface area is big.Compare thin-film material, under identical current density
More number of photons can be produced, improve the internal quantum efficiency of LED epitaxial structure.
Porous SiNxLayer 3 is not only able to the growth templates as GaN nanometer stick array 4, additionally it is possible to have
Effect reduces dislocation density and the continued growth of dislocation of this structure, thus reduces the non-radiative recombination of active area
Center, improves the internal quantum efficiency of LED epitaxial structure.
The periodic structure that GaN nanometer stick array 4 is good can also further enhance LED epitaxial structure
Light extraction efficiency.
As one embodiment of the present of invention, in the present embodiment, LED epitaxial structure also includes direct shape
Becoming AlN layer 2 on substrate 1, thickness is 2nm；AlN layer 2 fusing point is high, surface-active is low, makees
The film quality of the SiNx layer 3 being formed thereon can be effectively improved for cushion.As the present invention's
Convertible embodiment, AlN layer 2 thickness can also be 0nm～5nm, all can realize the mesh of the present invention
, belong to protection scope of the present invention.
As one embodiment of the present of invention, in the present embodiment, SiNxLayer 3 is amorphous Si NxLayer,
Thickness is 10nm, and aperture is 100nm.As the convertible embodiment of the present invention, SiNxLayer 3 thickness
Can also be 5nm～15nm, aperture can also be 50nm～300nm, all can realize the present invention's
Purpose, belongs to protection scope of the present invention.
As one embodiment of the present of invention, in the present embodiment, GaN nanometer stick array 4 adulterates for Si
GaN nanometer stick array, height be 2.5 μm, a diameter of 100nm.Convertible as the present invention
Embodiment, GaN nanometer stick array 4 can also be highly 2 μm～3 μm, and diameter can also be 50nm
～300nm, all can realize the purpose of the present invention, belong to protection scope of the present invention.
As one embodiment of the present of invention, in the present embodiment, multiple quantum well layer 5 is InGaN/GaN
Multiple quantum well layer, InGaN well layer thickness be 4nm, GaN barrier layer thickness be 12nm, the cycle is 8；
As the convertible embodiment of the present invention, in multiple quantum well layer 5, InGaN well layer thickness can also be
2nm～5nm, GaN barrier layer thickness can also be 10nm～15nm, and the cycle is 5～10 all can to realize this
The purpose of invention, belongs to protection scope of the present invention.
As one embodiment of the present of invention, in the present embodiment, GaN nanometer stick array 4 has nanometer chi
Very little (0001) polar surface, (1-101) semi-polarity face, (1-100) non-polar plane；Multiple quantum well layer 5
There is (0001) polar surface of nano-scale and/or (1-101) semi-polarity face and/or (1-100) is nonpolar
Face.Multiple quantum well layer 5 that GaN nanometer stick array 4 is coated with on each outer surface, p-type GaN layer 6
The spatial nuclei shell structure constituted has (0001) polar surface and/or (1-101) semi-polarity face of nano-scale
And/or (1-100) non-polar plane, can effectively contain Stark effect, reduce polarized electric field, promote
Electron-hole recombination probability, improves the internal quantum efficiency of LED epitaxial structure.
InGaN/GaN multiple quantum well layer 5, as luminous active area, has (0001) polar surface, (1-101)
Semi-polarity face and (1-100) non-polar plane, these different masks have different In content and trap thick, energy
Enough it is directly realized by colour light-emitting.
As one embodiment of the present of invention, in the present embodiment, the P that p-type GaN layer 6 is adulterated for Mg
Type GaN layer, thickness is 60nm；As the convertible embodiment of the present invention, thickness can also be
30nm～100nm, all can realize the purpose of the present invention, belong to protection scope of the present invention.
The preparation method of three-dimensional LED epitaxial structure, comprises the steps:
S1, the AlN layer 2 that formation stacking is arranged on substrate 1, porous SiNxLayer 3.
Substrate 1 selects commercial Sapphire Substrate, with NH3For nitrogen source, H2For carrier gas, it is 1050 in temperature
DEG C, pressure be to nitrogenize 90s under the conditions of 100mbar, form AlN layer 2 on substrate 1.
With SiH4For silicon source, NH4For nitrogen source, H2For carrier gas, growth temperature is 980 DEG C～1040 DEG C,
Pressure is that 133mbar grows 100s～200s；Close silicon source, at NH4Anneal under atmosphere 400s～600s,
Obtain porous SiNxLayer 3.As one embodiment of the present of invention, in the present embodiment, growth temperature is
1000 DEG C, growth time be 150s, annealing time is 500s.
S2, at SiNxLayer 3 hole form N-shaped GaN nanometer stick array 4；
Particularly as follows: with TMGa for gallium source, SiH4For silicon source, NH3For nitrogen source, H2For carrier gas, life
Long temperature is 1020 DEG C～1070 DEG C, and pressure is 600mbar, and V/III ratio is 10～200, growth
3600s-4800s。
As one embodiment of the present of invention, in the present embodiment, growth temperature is 1000 DEG C, growth time
Between be 4000s.
S3, on each outer surface of GaN nanometer stick array 4 formed multiple quantum well layer 5；
Particularly as follows: using TEGa as gallium source, NH3As nitrogen source, N2As carrier gas, growth temperature
Being 800 DEG C～860 DEG C, chamber pressure is 400mbar, grows 30s-60s, obtains GaN barrier layer；
As one embodiment of the present of invention, in the present embodiment, growth temperature is 830 DEG C, growth time is 50s.
With TEGa be gallium source, TMIn is for indium source, NH3For nitrogen source, N2For carrier gas, growth temperature is
720 DEG C～780 DEG C, chamber pressure is 400mbar, grows 30s-60s, obtains InGaN well layer；Make
For one embodiment of the present of invention, in the present embodiment, growth temperature is 750 DEG C, growth time is 50s.
S4, on multiple quantum well layer 5 formed p-type GaN layer 6.
Particularly as follows: using TEGa as gallium source, NH3As nitrogen source, H2As carrier gas, growth temperature
Being 800 DEG C～860 DEG C, chamber pressure is 400mbar, grows 30s-60s；As the present invention one
Embodiment, in the present embodiment, growth temperature is 830 DEG C, growth time is 50s.
The preparation method of three-dimensional LED epitaxial structure is the most easily implemented, and not only process costs is low, Er Qieneng
Product yield is enough effectively ensured.
Obviously, above-described embodiment is only for clearly demonstrating example, and not to embodiment
Restriction.For those of ordinary skill in the field, can also do on the basis of the above description
Go out change or the variation of other multi-form.Here without also all of embodiment being given thoroughly
Lift.And the obvious change thus extended out or variation still in protection scope of the present invention it
In.
Claims (10)
1. a three-dimensional LED epitaxial structure, it is characterised in that: include that substrate and stacking are arranged on described
Porous SiN on substratexLayer；Also include being formed at described SiNxN-shaped GaN nanometer rods in layer hole
Array, stacks gradually the multiple quantum well layer and p-type GaN being coated on described GaN nanometer stick array outer wall
Layer.
Three-dimensional LED epitaxial structure the most according to claim 1, it is characterised in that: described SiNxLayer
For amorphous Si NxLayer, thickness is 5nm～15nm, and aperture is 50nm～300nm.
Three-dimensional LED epitaxial structure the most according to claim 1 and 2, it is characterised in that: described GaN
Nanometer stick array is the GaN nanometer stick array of Si doping, and height is 2 μm～3 μm, a diameter of 50nm
～300nm.
4. according to the three-dimensional LED epitaxial structure described in any one of claim 1-3, it is characterised in that: institute
State GaN nanometer stick array have (0001) polar surface of nano-scale and/or (1-101) semi-polarity face and/or
(1-100) non-polar plane.
5. according to the three-dimensional LED epitaxial structure described in any one of claim 1-4, it is characterised in that: institute
Stating multiple quantum well layer is InGaN/GaN multiple quantum well layer, and InGaN well layer thickness is 2nm～5nm, GaN
Barrier layer thickness is 10nm～15nm, and the cycle is 5～10.
6. according to the three-dimensional LED epitaxial structure described in any one of claim 1-5, it is characterised in that: institute
State multiple quantum well layer have (0001) polar surface of nano-scale and/or (1-101) semi-polarity face and/or
(1-100) non-polar plane.
7. according to the three-dimensional LED epitaxial structure described in any one of claim 1-6, it is characterised in that: also
Including the AlN layer being formed directly on described substrate, thickness is 0nm～5nm；Described p-type GaN layer
For the p-type GaN layer of Mg doping, thickness is 30nm～100nm.
8. a preparation method for the three-dimensional LED epitaxial structure described in any one of claim 1-7, it is special
Levy and be, comprise the steps:
S1, on substrate formed porous SiNxLayer；
S2, at described SiNxLayer hole forms N-shaped GaN nanometer stick array；
S3, on the described each surface of GaN nanometer stick array formed multiple quantum well layer；
S4, on described multiple quantum well layer formed p-type GaN layer.
The preparation method of three-dimensional LED epitaxial structure the most according to claim 8, it is characterised in that
The step forming AlN layer it is additionally included on described substrate before described step S1.
The preparation method of three-dimensional LED epitaxial structure the most according to claim 8 or claim 9, its feature exists
In, in described step S1, described SiNxThe growing method of layer is: silicon source is SiH4, nitrogen source be NH4、
Carrier gas is H2, growth temperature is 980 DEG C～1040 DEG C, and pressure is that 133mbar grows 100s～200s；Close
Close silicon source, at NH4Anneal under atmosphere 400s～600s；
In described step S2, the growing method of described GaN nanometer stick array is: with TMGa be gallium source,
SiH4For silicon source, NH3For nitrogen source, H2For carrier gas, growth temperature is 1020 DEG C～1070 DEG C, and pressure is
600mbar, V/III ratio is 10～200, grows 3600s-4800s；
In described step S3, the growing method of described multiple quantum well layer is: using TEGa as gallium source, NH3
As nitrogen source, N2As carrier gas, growth temperature is 800 DEG C～860 DEG C, and chamber pressure is 400mbar,
Growth 30s-60s, obtains GaN barrier layer；With TEGa be gallium source, TMIn is for indium source, NH3For nitrogen source,
N2For carrier gas, growth temperature is 720 DEG C～780 DEG C, and chamber pressure is 400mbar, grows 30s-60s,
Obtain InGaN well layer；
In described step S4, the growing method of described p-type GaN layer is: using TEGa as gallium source, NH3
As nitrogen source, H2As carrier gas, growth temperature is 800 DEG C～860 DEG C, and chamber pressure is 400mbar,
Growth 30s-60s.
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