CN106952856A - The preparation method of nitride nano band - Google Patents
The preparation method of nitride nano band Download PDFInfo
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- CN106952856A CN106952856A CN201710063306.5A CN201710063306A CN106952856A CN 106952856 A CN106952856 A CN 106952856A CN 201710063306 A CN201710063306 A CN 201710063306A CN 106952856 A CN106952856 A CN 106952856A
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 118
- 238000002360 preparation method Methods 0.000 title claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 104
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 66
- 239000010703 silicon Substances 0.000 claims abstract description 66
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 65
- 230000012010 growth Effects 0.000 claims abstract description 21
- 230000003628 erosive effect Effects 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 34
- 238000005530 etching Methods 0.000 claims description 16
- 239000000126 substance Substances 0.000 claims description 9
- 239000002127 nanobelt Substances 0.000 claims description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 7
- 238000001039 wet etching Methods 0.000 claims description 7
- 238000000407 epitaxy Methods 0.000 claims description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 6
- 229910002704 AlGaN Inorganic materials 0.000 claims description 3
- 238000003780 insertion Methods 0.000 claims description 3
- 230000037431 insertion Effects 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 2
- 229910021641 deionized water Inorganic materials 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 229910017464 nitrogen compound Inorganic materials 0.000 claims 1
- 150000002830 nitrogen compounds Chemical class 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000009467 reduction Effects 0.000 abstract description 2
- 229910002601 GaN Inorganic materials 0.000 description 11
- 239000000463 material Substances 0.000 description 9
- 229910017083 AlN Inorganic materials 0.000 description 8
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 8
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000002086 nanomaterial Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000010291 electrical method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- -1 hydrofluoric acid Compound Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- Engineering & Computer Science (AREA)
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- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Materials Engineering (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
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Abstract
The invention provides a kind of preparation method of nitride nano band, including：Silicon substrate is etched, patterned silicon substrate is obtained；The growth nitride epitaxial layer on the wall of patterned silicon substrate；To the patterned silicon substrate and nitride epitaxial Rotating fields being sticked together, erosion removal patterned silicon substrate is carried out, nitride nano band is obtained.The present invention, without harsh requirement, can all carry out reduction production cost, using patterned substrate growing nitride, the size of growing nitride is controllable to the crystal orientation of Si substrates on Si (100) and Si (111) substrate.
Description
Technical field
The present invention relates to semi-conducting material preparation field, more particularly to a kind of preparation method of nitride nano band, it is intended to
Obtain the nitride nano band of size and structure-controllable.
Background technology
With the fast development of science and technology, the innovation of integrated circuit technology level, the integrated level of chip is improved constantly, light
The continuous reduction of electronic device features size, the diminution of size brings great challenge to technique.Due to quantum tunneling effect,
Processing line width unconfined can not reduce, and can produce when scantling reaches nanoscale a series of as caused by small size
Problem, therefore nanoscale science and technology is considered as 21 century most promising science and technology, it has promoted material, energy
The dramatic change of the every field such as source, information, environment, raw medical science, agricultural, national defence.
Aluminium nitride, gallium nitride are direct band gap semiconductor material with wide forbidden band, and energy gap is respectively 6.2eV, 3.39eV, nitrogen
Change the materials such as gallium, aluminium nitride and be referred to as third generation semi-conducting material.Because aluminium nitride, gallium nitride have a high thermal conductivity, high-melting-point,
Corrosion-resistant, less electron affinity energy, band-to-band transition launch wavelength can go deep into deep ultraviolet band, can be widely applied to phototube
Part.Meanwhile, the aluminium nitride lattice structure similar to gallium nitride and less lattice mismatch so that gallium nitride and aluminium nitride are heterogeneous
Knot growth has turned into the hot topic during photoelectric device is studied.Compared with single composition structure, nano heterojunction has monopolizing characteristic and permitted
It is multi-functional, thus have more applications.Due to the nano material of low-dimensional have small-size effect, surface and interfacial effect,
The nano effect such as quantum size effect and macro quanta tunnel effect, its light, electricity, chemistry and thermal property are sent out compared with body material
Raw obvious change.In some cases, two-dimension nano materials show more superior performance than corresponding large scale material.It is right
Two-dimension nano materials characteristic and the hot subject that the research of application is in current nano materials research, two-dimension nano materials are in function
Application in device will produce active influence to fields such as electronics, information.
Because the application field of nitride is extremely extensive, therefore the preparation of nitride semi-conductor material seems weight especially
Will.Preparing gallium nitride and the method for aluminum nitride nanometer material at present has a lot, has lot of documents to report and uses chemical vapor deposition
The methods such as method, molecular beam epitaxy, hydride vapour phase epitaxy method and thermal decomposition method；Put with CNT template, direct-current arc
The methods such as electrical method, chemical vapour deposition technique and metal organic chemical vapor deposition prepare aluminum nitride nanometer material.These preparation sides
Fado uses preparation method from bottom to top, and the people prepared using top-to-bottom method is few, and gallium nitride and nitridation
The nano material of aluminium uses different preparation methods.
The content of the invention
It is an object of the invention to provide a kind of method for preparing nitride nano band from top to bottom, added using MOCVD growths
The technique of wet etching, preparation technology is simple, and can realize the preparation of gallium nitride and aluminum nitride nanometer band simultaneously.
To achieve the above object, the invention provides a kind of preparation method of nitride nano band.The nitride nano band
Preparation method, it is characterised in that comprise the following steps：
Silicon substrate is etched, patterned silicon substrate is obtained；
The growth nitride epitaxial layer on the wall of patterned silicon substrate；
The patterned silicon substrate and nitride epitaxial Rotating fields being sticked together are corroded, patterned silicon lining is removed
Bottom, obtains nitride nano band.
Preferably, in the preparation method of nitride nano band of the present invention, silicon substrate is etched, the step of patterned silicon substrate is obtained
In rapid, the etched surface formed on a silicon substrate through over etching is plane.
Preferably, in the preparation method of nitride nano band of the present invention, silicon substrate is Si (100) substrate；Etch silicon substrate,
The step of obtaining patterned silicon substrate includes：Si (100) substrate is subjected to photoetching, and carries out wet etching, the bar of insertion is obtained
Shape groove, wherein, the cross section of bar-shaped trough is in inverted trapezoidal, with left prism and right prism upward.In patterned silicon
On the wall of substrate the step of growth nitride epitaxial layer in, nitride epitaxial layer be grown on the bar-shaped trough left prism and
Right prism.
Preferably, in the preparation method of nitride nano band of the present invention, in wet etching, the etching liquid used is TMAH+
IPA solution.
Preferably, in the preparation method of nitride nano band of the present invention, silicon substrate is silicon (111) substrate；Etch silicon substrate,
The step of obtaining patterned silicon substrate includes：Performed etching on Si (111) substrate, etch micron order groove, obtain figure
Change Si (111) substrate, wherein, the cross section of the micron order groove is rectangle.Nitridation is grown on the wall of patterned silicon substrate
In the step of thing epitaxial layer, nitride epitaxial layer is grown on the bottom surface of the micron order groove.
Preferably, in the preparation method of nitride nano band of the present invention, using metal oxide chemical vapor epitaxy method,
The growth nitride epitaxial layer structure on the wall of patterned silicon substrate.
Preferably, in the preparation method of nitride nano band of the present invention, silicon substrate is that nitride epitaxial layer is AlN extensions
Layer, AlGaN epitaxial layers, InGaN epitaxial layers, the full structures of LED.
Preferably, in the preparation method of nitride nano band of the present invention, nitride epitaxial layer be the full structures of LED, using
Include on the wall of patterned silicon substrate the step of growth nitride epitaxial layer：Growing AIN cushion；Extension n- on the buffer layer
GaN；N group SQWs are grown, wherein in SQW, the content of In components is 15% in InGaN；P- thick one layer of 10nm of growth
GaN, so that extension obtains LED structure.
Preferably, in the preparation method of nitride nano band of the present invention, using wet etching method, to what is be sticked together
Patterned silicon substrate and nitride epitaxial Rotating fields, carry out erosion removal patterned silicon substrate.
Preferably, in the preparation method of nitride nano band of the present invention, in wet etching method, the etchant solution used is
The solution that salpeter solution, hydrofluoric acid solution and deionized water are proportionally made into.
Preferably, in the preparation method of nitride nano band of the present invention, also include before the step of etching silicon substrate：To silicon
Substrate carries out standard RCA clean.
Preferably, in the preparation method of nitride nano band of the present invention, also wrapped after the step of obtaining nitride nano band
Include：Nitride nano band is suctioned out to objective using suction pipe and dried.
From above-mentioned technical proposal as can be seen that the preparation method of nitride nano band of the present invention at least has following beneficial effect
One of fruit：
(1) this method can all be entered to the crystal orientation of Si substrates without harsh requirement on Si (100) and Si (111) substrate
OK；
(2) use of silicon substrate can reduce production cost；
(3) lithographic method of graph substrate is various, dry method wet method；
(4) patterned substrate growing nitride is utilized, because the size of graph substrate is controllable, the size of growing nitride can
Control；
(5) MOCVD epitaxy nitride is utilized, its growth thickness is controllable；
(6) etching process of silicon substrate is ripe, and nitride stable chemical nature, it is not easy to be corroded；
(7) this method can prepare the nitride of the material that can use MOCVD epitaxy of any stable chemical nature
Nanobelt.
Brief description of the drawings
Figure 1A is according to flow chart of the first embodiment of the invention nitride nano with preparation method.
Figure 1B is the nitride nano band according to the nitride nano shown in Figure 1A with preparation method after step S104
Structure chart.
Fig. 2A is according to flow chart of the second embodiment of the invention nitride nano with preparation method.
Fig. 2 B are the nitride nano band according to the nitride nano shown in Fig. 2A with preparation method after step S206
Structure chart.
Fig. 3 A are according to flow chart of the third embodiment of the invention nitride nano with preparation method.
Fig. 3 B are the knot of the nitride nano band according to nitride nano shown in Fig. 3 A with preparation method after step S306
Composition.
【Figure elements symbol description】
1- silicon substrates；2- patterned silicon substrates；3- graphical Si (100) substrate；
4- nitride epitaxial layers；5- nitride nano bands；6-Si (100) substrate；
The left prisms of 7-；The right prisms of 8-；9- bar-shaped troughs；
10-Si (111) substrate；11- wall surfaces；12- graphical Si (111) substrate；
13- micron order grooves；14- upper lefts wall；15- upper right walls；
16- etched surfaces；17- upper wall surfaces.
Embodiment
For the object, technical solutions and advantages of the present invention are more clearly understood, below in conjunction with specific embodiment, and reference
Accompanying drawing, is furtherly described in detail to the present invention.
First, first embodiment
There is provided a kind of preparation method of nitride nano band in first exemplary embodiment of the present invention.Figure 1A
For according to flow chart of the first embodiment of the invention nitride nano with preparation method.As shown in Figure 1A, the present embodiment nitride
The preparation method of nanobelt comprises the following steps：
Step S102, etches silicon substrate 1, obtains patterned silicon substrate 2, the upper wall surface 17 of the patterned silicon substrate 2 has
Etched surface 16.
Step S104, on the etched surface 16 of patterned silicon substrate 2, growth nitride epitaxial layer 4.
Figure 1B is the nitride nano band according to the first nitride nano shown in Figure 1A with preparation method after step S104
Structure chart.As shown in Figure 1B, the upper wall surface 17 of patterned silicon substrate 2 has in etched plane 16, this step, utilizes metal oxygen
Compound Chemical Vapor-Phase Epitaxy method growing nitride nanobelt 5, the growth nitride epitaxial layer 4 on etched plane 16.Nitride
The structure for the stable chemical nature that epitaxial layer 4 can be grown with MOCVD, can be AlN epitaxial layers, AlGaN epitaxial layers, InGaN
The full structure of epitaxial layer, LED.Above-mentioned growing method is used, growth obtains a nitride nano band 5, and the structure of nitride epitaxial layer 4 is
It is sticked together with patterned silicon substrate 2.
Step S106, continues referring to Figure 1B, to patterned silicon substrate 2 and the knot of nitride epitaxial layer 4 being sticked together
Structure row corrodes, and to remove patterned silicon substrate 2, obtains nitride nano band 5.
Step S108, the nitride nano band 5 obtained after corrosion is shifted.
Based on described above, it will be appreciated by persons skilled in the art that using the preparation method of the present embodiment, being served as a contrast to silicon
The crystal orientation at bottom is without harsh requirement, and the lithographic method of graph substrate is various, dry method wet method；Grown using patterned substrate
Nitride, because the size of graph substrate is controllable, the size of growing nitride is controllable.
So far, the preparation method of first embodiment of the invention nitride nano band, introduction is finished.
2nd, second embodiment
There is provided the preparation method of another nitride nano band in second exemplary embodiment of the present invention.Figure
2A is according to flow chart of the second embodiment of the invention nitride nano with preparation method.As shown in Figure 2 A, the present embodiment is nitrogenized
The preparation method of thing nanobelt, comprises the following steps：
Step S202, using Si (100) substrate 6, thickness is 400 μm, is cleaned up with RCA standard cleaning methods.
Step S204, photoetching is carried out by Si (100) substrate 6, and is corroded using TMAH+IPA solution, and obtaining width is
5 μm, depth is the bar-shaped trough 9 of 10 μm of insertion, obtains graphical Si (100) substrate 3.Wherein, the cross section of the bar-shaped trough 9
In inverted trapezoidal.
Step S206, by graphical Si (100) substrate 3 using after RCA standard cleanings, feeding metallo-organic compound is meteorological
In extension (MOCVD) equipment, the left prism 7 of bar-shaped trough 9 is with distinguishing growth nitride epitaxial layer on right prism 8.
Fig. 2 B are the knot of the nitride nano band according to nitride nano shown in Fig. 2A with preparation method after step S206
Composition.As shown in Figure 2 B, the thick AlN cushions of one layer of 330nm, then the n- of the μ m-thick of extension about 3 on the buffer layer are grown first
GaN, then grows 5 groups of SQWs, wherein trap thickness 3nm, and the content for building In components in thickness 17nm, InGaN is 15%.On this basis
P-GaN thick upper one layer of 10nm of growth, extension obtains LED structure.
Step S208, graphical Si (100) substrate 3 is eroded, obtain nitrogen using the mixed solution of nitric acid and hydrofluoric acid
Compound nanobelt 5.Then chemical attack is being carried out to Si substrates using 68% HNO3 and 5M HF mixed solutions；Etching time
For 30 minutes, afterwards by the unlimited number of dilution of its solution polarity.
Step S210, is suctioned out nitride nano band 5 using suction pipe, is dried and be can obtain on the silicon substrate for being put into no etching
The nitride nano band 5 of the full structures of LED.
Nitride nano band is prepared using MOCVD epitaxy nitride, its growth thickness is controllable；The corrosion of Si (100) substrate
Technical maturity, and nitride stable chemical nature, it is not easy to be corroded；The use of Si (100) substrate can reduce production cost.
So far, the preparation method of second embodiment of the invention nitride nano band, introduction is finished.
3rd, 3rd embodiment
There is provided the preparation method of another nitride nano band in the 3rd exemplary embodiment of the present invention.Figure
3A is according to flow chart of the third embodiment of the invention nitride nano with preparation method, the nitride nano band of the present embodiment the 3rd
Preparation method, comprise the following steps：
Step S302：Standard RCA clean is carried out to Si (111) substrate 10.
Step S304：Performed etching on Si (111) substrate 10, etch micron order groove 13, obtain graphical Si
(111) substrate 12.
Wherein, the cross section of the micron order groove 13 is rectangle.
Step S306：Upper left wall 14, upper right using MOCVD in the micron order groove 13 of graphical Si (111) substrate 12
Wall 15 and epitaxial nitride epitaxial layer 4 on wall surface 11.
Fig. 3 B are, according in the band preparation method of nitride nano shown in Fig. 3 A, Si (111) substrate to be used after step S306
The structure chart of 10 growing nitride nanobelts 5.
Step S308：Graphical Si (111) substrate 12 is eroded using the mixed solution of nitric acid and hydrofluoric acid, nitrogen is obtained
Compound nanobelt 5.
Step S310：Nitride nano band 5 is transferred on substrate using suction pipe.
Nitride nano band is prepared using MOCVD epitaxy nitride, its growth thickness is controllable；The dry method of Si (111) substrate
Etching process is ripe, and nitride stable chemical nature, it is not easy to be corroded；The use of Si (111) substrate, which can be reduced, to be produced into
This.
So far, the preparation method of third embodiment of the invention nitride nano band, introduction is finished.
Certainly, according to actual needs, the preparation method for the nitride nano band that the present invention is shown, also comprising other techniques
And step, because the innovation with the present invention is unrelated, here is omitted.
So far, the preparation method of fourth embodiment of the invention nitride nano band, introduction is finished.
It should also be noted that, the demonstration of the parameter comprising particular value can be provided herein, but these parameters are without definite etc.
In corresponding value, but analog value can be similar in acceptable error margin or design constraint.The side mentioned in embodiment
Only it is the direction of refer to the attached drawing such as " on ", " under ", "front", "rear", "left", "right" to term, not for limiting this
The protection domain of invention.
Particular embodiments described above, has been carried out further in detail to the purpose of the present invention, technical scheme and beneficial effect
Describe in detail it is bright, should be understood that the foregoing is only the present invention specific embodiment, be not intended to limit the invention, it is all
Within the spirit and principles in the present invention, any modifications, equivalent substitutions and improvements done etc., should be included in the guarantor of the present invention
Within the scope of shield.
Claims (10)
1. a kind of preparation method of nitride nano band, it is characterised in that including：
Silicon substrate is etched, patterned silicon substrate is obtained；
The growth nitride epitaxial layer on the wall of patterned silicon substrate；
The patterned silicon substrate being sticked together is corroded with nitride epitaxial layer, patterned silicon substrate is removed, obtains nitrogen
Compound nanobelt.
2. the preparation method of nitride nano band according to claim 1, it is characterised in that the etching silicon substrate, is obtained
To in the step of patterned silicon substrate, the etched surface formed on a silicon substrate through over etching is plane.
3. the preparation method of nitride nano band according to claim 1, it is characterised in that the silicon substrate is Si
(100) substrate；
The etching silicon substrate, the step of obtaining patterned silicon substrate includes：Photoetching is carried out to Si (100) substrate and wet method is rotten
Erosion, obtains the bar-shaped trough of insertion, wherein, the cross section of the bar-shaped trough is in inverted trapezoidal, with left prism upward and
Right prism；
It is described on the wall of patterned silicon substrate the step of growth nitride epitaxial layer in, the nitride epitaxial layer is grown on
The left prism and right prism of the bar-shaped trough.
4. the preparation method of nitride nano band according to claim 3, it is characterised in that in the wet etching, adopt
Etching liquid is TMAH+IPA solution.
5. the preparation method of nitride nano band according to claim 1, it is characterised in that the silicon substrate is silicon
(111) substrate；
The etching silicon substrate, the step of obtaining patterned silicon substrate includes：Perform etching, etch on Si (111) substrate
Micron order groove, obtains graphical Si (111) substrate, wherein, the cross section of the micron order groove is rectangle；
It is described on the wall of patterned silicon substrate the step of growth nitride epitaxial layer in, the nitride epitaxial layer is grown on
The bottom surface of the micron order groove.
6. the preparation method of nitride nano band according to any one of claim 1 to 5, it is characterised in that using gold
Belong to Oxide chemical vapor epitaxy method, the growth nitride epitaxial layer structure on the wall of patterned silicon substrate.
7. the preparation method of nitride nano band according to claim 6, it is characterised in that the nitride epitaxial layer is
AlN epitaxial layers, AlGaN epitaxial layers, InGaN epitaxial layers, the full structures of LED.
8. the preparation method of nitride nano band according to claim 7, it is characterised in that the nitride epitaxial layer is
The full structures of LED；
Described utilize includes on the wall of patterned silicon substrate the step of growth nitride epitaxial layer：
Growing AIN cushion；
Extension n-GaN on the buffer layer；
N group SQWs are grown, in the SQW, the content of In components is 15% in InGaN；
P-GaN is grown, LED structure is obtained.
9. the preparation method of nitride nano band according to any one of claim 1 to 5, it is characterised in that using wet
Method lithographic method, to patterned silicon substrate and the nitride epitaxial Rotating fields being sticked together, carries out erosion removal patterned silicon
Substrate；
Wherein, in the wet etching method, the etchant solution used be salpeter solution, hydrofluoric acid solution and deionized water by
The solution being made into according to ratio.
10. the preparation method of nitride nano band according to any one of claim 1 to 5, it is characterised in that：
Also include before the step of etching silicon substrate：Standard RCA clean is carried out to silicon substrate；And/or
It is described the step of obtain nitride nano band after also include：Nitride nano band is suctioned out to objective using suction pipe
Dried.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710063306.5A CN106952856B (en) | 2017-01-26 | 2017-01-26 | Preparation method of nitride nanobelt |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710063306.5A CN106952856B (en) | 2017-01-26 | 2017-01-26 | Preparation method of nitride nanobelt |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106952856A true CN106952856A (en) | 2017-07-14 |
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