CN203910838U - GaN film grown on Si substrate - Google Patents
GaN film grown on Si substrate Download PDFInfo
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- CN203910838U CN203910838U CN201420307702.XU CN201420307702U CN203910838U CN 203910838 U CN203910838 U CN 203910838U CN 201420307702 U CN201420307702 U CN 201420307702U CN 203910838 U CN203910838 U CN 203910838U
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- Prior art keywords
- gan
- substrate
- stepping
- layer
- resilient coating
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- 239000000758 substrate Substances 0.000 title claims abstract description 66
- 239000011248 coating agent Substances 0.000 claims description 53
- 238000000576 coating method Methods 0.000 claims description 53
- 239000013078 crystal Substances 0.000 claims description 20
- 230000000694 effects Effects 0.000 abstract description 4
- 230000008646 thermal stress Effects 0.000 abstract description 2
- 230000035515 penetration Effects 0.000 abstract 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 95
- 229910002601 GaN Inorganic materials 0.000 description 87
- 239000010408 film Substances 0.000 description 33
- 238000002360 preparation method Methods 0.000 description 7
- 239000011777 magnesium Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 238000010792 warming Methods 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000009514 concussion Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000005431 greenhouse gas Substances 0.000 description 2
- 238000002017 high-resolution X-ray diffraction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses a GaN film grown on a Si substrate. The Si substrate, an AlN nucleating layer, an AlxGa(1-x)N stepping buffer layer, an AlN interposed layer, a GaN nucleating layer and a GAN film are included, wherein the AlN nucleating layer, AlxGa(1-x)N stepping buffer layer, AlN interposed layer, GaN nucleating layer and GaN film are successively grown on the Si substrate, and x ranges from 0 to 1. Due to bottom layer effects of the AlN nucleating layer, AlxGa(1-x)N stepping buffer layer, AlN interposed layer and GaN nucleating layer the problem that penetration dislocation frequently occurs when the GaN film is grown on the Si substrate is solved, and structure of the GaN film grown on the Si substrate is more stable, and the technical problem that mismatch of thermal stress causes cracks of the GaN film is overcome.
Description
Technical field
The utility model relates to GaN film, particularly relates to the GaN film on a kind of Si of being grown in substrate.
Background technology
Light-emitting diode (LED) is as a kind of novel solid lighting source and green light source, have that volume is little, power consumption is low, environmental protection, long service life, high brightness, the outstanding feature such as low in calories and colorful, all have a wide range of applications in fields such as outdoor lighting, commercial lighting and decorative engineerings.Under the increasingly severe background of global warming problem, energy savings, reduce greenhouse gas emission and become the major issue that the whole world is faced jointly, taking low energy consumption, low pollution, low emission as basic low-carbon economy, will become the important directions of economic development.At lighting field, the application of LED luminous product is just attracting common people's sight, and LED, as a kind of novel green light source product, must be the trend of future development, and 21st century is by the epoch that are the novel illumination light source taking LED as representative.But the application cost of present stage LED is higher, and luminous efficiency is lower, these factors all can limit the future development of LED to high-efficient energy-saving environment friendly greatly.
III-group-III nitride GaN (gallium nitride) has extremely excellent character on electricity, optics and acoustics, is subject in recent years extensive concern.GaN is direct band gap material, and sonic transmissions speed is fast, chemistry and Heat stability is good, and thermal conductivity is high, and thermal coefficient of expansion is low, punctures dielectric strength high, is the ideal material of manufacturing efficient LED device.At present, the luminous efficiency of GaN base LED has reached 28% and in further growth now, and this numerical value is far away higher than the luminous efficiency of the lighting systems such as current normally used incandescent lamp (being about 2%) or fluorescent lamp (being about 10%).Data statistics shows, the current electric consumption on lighting of China more than 4,100 hundred million degree, exceedes Britain's whole nation power consumption of a year every year.If with LED replace whole incandescent lamps or part replace fluorescent lamp, can save the electric consumption on lighting that approaches half, exceed the Three Gorges Projects energy output of the whole year.Therefore the greenhouse gas emission producing because of illumination also can reduce greatly.In addition, compared with fluorescent lamp, GaN base LED is containing poisonous mercury element, and is about 100 times of this type of illuminations useful life.
Conventionally GaN base LED prepares used substrate for sapphire and SiC.But because Sapphire Substrate price is higher, cause present stage LED chip price in a higher level.Secondly, due to sapphire thermal conductivity low (100 DEG C time be 25W/m.K), be difficult to the heat producing in chip to discharge in time, cause thermal accumlation, reduced the internal quantum efficiency of device, thereby finally affected the performance of device.For SiC, although there is not above-mentioned shortcoming, fancy price has restricted its application; In addition, the foreign corporation that the patent that SiC substrate is prepared GaN base LED only rests in minority on hand.Therefore we are a kind of cheap in the urgent need to finding, and have the Novel substrate of high heat conductance.
Si substrate is owing to having ripe preparation technology, and high crystalline quality, and cheap price, up to the thermal conductivity of 100W/m.K, become one of best selection of preparation GaN base LED device substrate.But and huge lattice mismatch (16.9%) and thermal mismatching (54%) between GaN, can in growth course, produce a large amount of threading dislocations, even in temperature-fall period, produce and introduce Zhang Yinli and crack.This restricts the subject matter that Si substrate is prepared LED device just.
Utility model content
In order to overcome the deficiencies in the prior art, the purpose of this utility model is to provide the GaN film on a kind of Si of being grown in substrate, the utility model has solved the problem that produces a large amount of threading dislocations in Si Grown GaN thin-film process, make to be grown in GaN membrane structure on Si substrate more stable, overcome thermal stress mismatch and cause the technical problem of crackle to GaN film.
For addressing the above problem, the technical scheme that the utility model adopts is as follows:
Be grown in the GaN film on Si substrate, comprise Si substrate, AlN nucleating layer, Al
xga
1-xn stepping resilient coating, AlN insert layer, GaN nucleating layer and GaN film, described AlN nucleating layer, Al
xga
1-xn stepping resilient coating, AlN insert layer, GaN nucleating layer and GaN film are grown on Si substrate successively, and wherein, x is 0-1.
Preferably, described Si substrate is taking (111) crystal face as epitaxial surface, and crystal epitaxial orientation closes and is: GaN (0001) crystal face is parallel to Si (111) crystal face, and described AlN nucleating layer is grown on Si (111) crystal face.
Preferably, described Al
xga
1-xn stepping resilient coating comprises Al
0.75ga
0.25n stepping resilient coating, Al
0.5ga
0.5n stepping resilient coating and Al
0.25ga
0.75n stepping resilient coating, described Al
0.75ga
0.25n stepping resilient coating, Al
0.5ga
0.5n stepping resilient coating and Al
0.25ga
0.75n stepping resilient coating is grown between AlN nucleating layer and AlN insert layer from top to bottom successively.
Preferably, described AlN nucleating layer thickness is 10～100nm, described Al
0.75ga
0.25the thickness of N stepping resilient coating is 50～120nm, described Al
0.5ga
0.5the thickness of N stepping resilient coating is 100～200nm, described Al
0.25ga
0.75the thickness of N stepping resilient coating is 150～300nm, and described AlN insert layer thickness is 10～50nm, and described GaN nucleating layer thickness is 200～500nm, and described GaN film thickness is 1～2 μ m.
Compared to existing technology, the beneficial effects of the utility model are:
1, the utility model utilizes AlN nucleating layer, Al
xga
1-xthe bottom effect of N stepping resilient coating, AlN insert layer, GaN nucleating layer, solve the problem that produces a large amount of threading dislocations in upper growing GaN thin-film process, make to be grown in GaN membrane structure on Si substrate more stable, meanwhile, overcome the temperature difference and cause the technical problem of crackle to GaN film;
2, the utility model uses Si as substrate, and Si substrate easily obtains, and low price is conducive to reduce production costs; And the heat conduction of Si, good conductivity, be conducive to Si electronic device and GaN base electron device and optical element is integrated in chip piece and the LED of the high-power vertical stratification of preparation;
3, the utility model uses the thick AlN nucleating layer of 20～50nm can completely cut off Si and NH
3reaction forms SiN
xaffect forming core, can completely cut off in addition Si and directly contact with Ga, thereby avoided the high temperature eutectic reaction etched substrate of Si～Ga, for grow high quality GaN film by MOCVD next lays the foundation;
4, three layers of Al that the utility model uses
xga
1-xn stepping resilient coating and AlN insert layer, can effectively alleviate the tensile stress causing because of lattice mismatch huge between GaN and Si and thermal mismatching, can play in addition the effect of filter threading dislocation, promotes the crystal mass of GaN epitaxial film; Than the upper mocvd method epitaxial deposition GaN epitaxial film that adopts of same Si, can obtain high-quality GaN epitaxial film;
5, the thickness of the utility model AlN insert layer is 10～50nm, can play and Al
xga
1-xthe effect that N stepping resilient coating is identical, but can introduce larger compression, promote the quality of epitaxial film simultaneously;
6, in the utility model, GaN nucleating layer, for the high-quality GaN epitaxial film of further growth provides nuclearing centre, ensures the high-quality of later stage GaN film.
Brief description of the drawings
Fig. 1 is that the utility model is grown in GaN membrane structure on Si substrate with intention;
Fig. 2 is high-resolution X-ray diffraction swing curve (RCXRD) collection of illustrative plates that is grown in the GaN film GaN (0002) on Si substrate prepared by the utility model embodiment 1;
Fig. 3 is high-resolution X-ray diffraction swing curve (RCXRD) collection of illustrative plates that is grown in the GaN film GaN (10-12) on Si substrate prepared by the utility model embodiment 1;
Wherein, 1 is Si substrate, and 2 is AlN nucleating layer, and 3 is Al
0.75ga
0.25n stepping resilient coating, 4 is Al
0.5ga
0.5n stepping resilient coating, 5 is Al
0.25ga
0.75n stepping resilient coating, 6 is AlN insert layer, and 7 is GaN nucleating layer, and 8 is GaN film.
Embodiment
Below in conjunction with the drawings and specific embodiments, the utility model is described in further detail.
As shown in Figure 1, for the utility model is grown in GaN membrane structure on Si substrate with intention, comprise Si substrate 1, AlN nucleating layer 2, Al
xga
1-xn stepping resilient coating, AlN insert layer 6, GaN nucleating layer 7 and GaN film 8, in preferred version, Al
xga
1-xn stepping resilient coating comprises Al
0.75ga
0.25n stepping resilient coating 3, Al
0.5ga
0.5n stepping resilient coating 4 and Al
0.25ga
0.75n stepping resilient coating 5, described Si substrate 1 is taking (111) crystal face as epitaxial surface, crystal epitaxial orientation closes: GaN (0001) crystal face is parallel to Si (111) crystal face, and described AlN nucleating layer 2 is grown on Si substrate 1 (111) crystal face, Al
0.75ga
0.25n stepping resilient coating 3, Al
0.5ga
0.5n stepping resilient coating 4, Al
0.25ga
0.75n stepping resilient coating 5, AlN insert layer 6, GaN nucleating layer 7, GaN film 8 are grown on AlN nucleating layer 2 successively.
Embodiment 1
Be grown in the preparation of the GaN film on Si substrate, comprise the following steps:
(1) substrate with and the choosing of crystal orientation: adopt Si substrate, using (111) face as template is as epitaxial surface, crystal epitaxial orientation closes: (0001) face of GaN is parallel to (111) face of Si, i.e. GaN (0001) //Si (111).
(2) substrate cleans and annealing in process: the HF solution (HF:H that adopts high concentration
2o=1:1 (v:v)) Si substrate is carried out to long ultrasonic concussion cleaning; Use again washed with de-ionized water rinse 30 times; Finally blown off by nitrogen gun; Put into the inherent 1050 DEG C of H of reative cell
2under environment, carry out the high temperature anneal, remove the remaining O element of Si substrate surface.
(3) AlN nucleating layer epitaxial growth: Si underlayer temperature is adjusted to 1030 DEG C is 50torr at the pressure of reative cell; Then first pass into TMAl, flow velocity is 200sccm, spreads two to three layers of Al atomic layer, isolated Si substrate and NH
3contact, prevents from producing SiN
x, continue 1 minute, then pass into TMAl and NH simultaneously
3, NH
3flow is 28slm, maintains V/III 1000, growth rate 2nm/min, the thick AlN nucleating layer of growth 60nm.
(4) Al
xga
1-xthe epitaxial growth of N stepping resilient coating: keep Si substrate at 1030 DEG C, chamber pressure is 50Torr, NH
3flow be 10slm, the flow of TMAl is under 250sccm condition, changing the flow of TMGa is 8sccm, growth rate 3nm/min, the thick Al of 120nm grows on the AlN nucleating layer obtaining in step (3)
0.75ga
0.25n stepping resilient coating; Then change TMGa flow to 26sccm, keep other conditions constant, growth rate 6nm/min, at Al
0.75g
0.25the thick Al of 150nm grows on N stepping resilient coating
0.5ga
0.5n stepping resilient coating; Then continue to change TMGa flow to 70sccm, keep other conditions constant, growth rate 10nm/min, at Al
0.5ga
0.5the thick Al of 300nm grows on N stepping resilient coating
0.25ga
0.75n stepping resilient coating.
(5) epitaxial growth of AlN insert layer: grown after AlGaN resilient coating, Si substrate is warming up to 1040 DEG C, changes TMAl flow to 200sccm, changes NH
3flow is to 28slm, and chamber pressure remains on 50torr, the about 30nmAlN insert layer of growing.
(6) epitaxial growth of GaN nucleating layer: improve chamber pressure to 500torr, Si underlayer temperature is reduced to 1000 DEG C, maintains V/III 3000, and growth rate is 0.9 μ m/h, the about 200nm GaN nucleating layer of growing.
(7) epitaxial growth of GaN film: reduce chamber pressure to 150torr, Si underlayer temperature is increased to 1030 DEG C, maintains V/III 4000, and growth rate is 3 μ m/h, and the approximately 1.5 μ m GaN that grow, must be grown in the GaN film on Si substrate.
Fig. 2～3rd, the X ray swing curve collection of illustrative plates of prepared by the present embodiment the be grown in GaN film on Si substrate, from X ray swing curve, can see, the half-peak breadth (FWHM) of the X ray swing curve of GaN (0002) is worth lower than 440arcsec, and the half-peak breadth value of GaN (10-12) is 580arcsec; Show that epitaxial growth has gone out high-quality GaN film on Si (111) substrate.
Prepared by the present embodiment is grown in GaN film on Si substrate for the preparation of LED: for preparing at the present embodiment is grown on the GaN film on Si substrate N-shaped GaN, the In of epitaxial growth Si doping successively
xga
1-xthe p-type of N multiple quantum well layer, Mg doping is mixed the GaN layer of magnesium, and last electron beam evaporation forms ohmic contact.The GaN base LED device preparing on Si substrate, the thickness of its N-shaped GaN is about 1 μ m, and the concentration of its charge carrier is 4 × 10
18cm
- 3; In
xga
1-xthe thickness of N/GaN multiple quantum well layer is about 160nm, and periodicity is 10, wherein In
xga
1-xn trap layer is 3nm, and it is 13nm that GaN builds layer, and the GaN layer thickness that p-type is mixed magnesium is about 150nm, and the concentration of its charge carrier is 3 × 10
17cm
-3.Under the operating current of 20mA, the optical output power of LED device is 4.02mW, and cut-in voltage value is 3.494V.
Embodiment 2
Be grown in the preparation of the GaN film on Si substrate, comprise the following steps:
(1) substrate with and the choosing of crystal orientation: adopt Si substrate, using (111) face as template epitaxial surface, crystal epitaxial orientation closes: (0001) face of GaN is parallel to (111) face of Si, i.e. GaN (0001) //Si (111).
(2) substrate cleans and annealing in process: the HF solution (HF:H that adopts high concentration
2o=1:1) Si substrate being carried out to long ultrasonic concussion cleans; Use again washed with de-ionized water rinse 30 times; Finally blown off by nitrogen gun; Put into the inherent 1050 DEG C of H of reative cell
2under environment, carry out the high temperature anneal, remove the remaining O element of Si substrate surface.
(3) AlN nucleating layer epitaxial growth: Si underlayer temperature is adjusted to 960 DEG C is 100torr at the pressure of reative cell; Then first pass into TMAl, flow velocity is 250sccm, spreads two to three layers of Al atomic layer, isolated Si substrate and NH
3contact, prevents from producing SiN
x, continue 1 minute, then pass into TMAl and NH simultaneously
3, NH
3flow is 25slm, maintains V/III 2000, growth rate 0.6nm/min, the thick AlN nucleating layer of growth 30nm.
(4) Al
xga
1-xthe epitaxial growth of N stepping resilient coating: keep 1060 DEG C of Si underlayer temperatures, chamber pressure is 100Torr, NH
3flow be 10slm, the flow of TMAl is under 250sccm condition, changing the flow of TMGa is 5sccm, growth rate 2.5nm/min, the thick Al of 90nm grows on the AlN nucleating layer obtaining in step (3)
0.75ga
0.25n stepping resilient coating; Then change TMGa to 20sccm, keep other conditions constant, growth rate 4nm/min, at Al
0.75g
0.25the thick Al of 120nm grows on N stepping resilient coating
0.5ga
0.5n stepping resilient coating; Then continue to change TMGa flow to 65sccm, keep other conditions constant, growth rate 8nm/min is at Al
0.5ga
0.5the thick Al of 200nm grows on N stepping resilient coating
0.25ga
0.75n stepping resilient coating.
(5) epitaxial growth of AlN insert layer: grown after AlGaN resilient coating, Si substrate is warming up to 1070 DEG C.Change TMAl flow to 150sccm, change NH
3flow is to 25slm, and chamber pressure remains on 100torr, and growth rate is 0.6nm/min, at Al
0.25ga
0.75the about 10nm AlN insert layer of growing on N stepping resilient coating.
(6) epitaxial growth of GaN nucleating layer: improve chamber pressure to 450torr, Si underlayer temperature is reduced to 1030 DEG C, maintains V/III 3000, and growth rate is 0.8 μ m/h, the about 200nm GaN nucleating layer of growing in AlN insert layer.
(7) epitaxial growth of GaN film: reduce chamber pressure to 220torr, Si underlayer temperature is increased to 1060 DEG C, maintains V/III 1200, and growth rate is 3.5 μ m/h, at the GaN nucleating layer approximately 1.5 μ m GaN that grow.
Prepared by the present embodiment is grown in GaN film on Si substrate for the preparation of LED: the N-shaped of epitaxial growth Si doping successively that is grown on the GaN film on Si substrate of preparing at the present embodiment is mixed SiGaN, In
xga
1-xthe p-type of N multiple quantum well layer, Mg doping is mixed the GaN layer of magnesium, and last electron beam evaporation forms ohmic contact.The GaN base LED device preparing on Si substrate, the thickness of its N-shaped GaN is about 1.5 μ m, and the concentration of its charge carrier is 4 × 10
18cm
-3; In
xga
1-xthe thickness of N/GaN multiple quantum well layer is about 160nm, and periodicity is 10, wherein In
xga
1-xn trap layer is 3nm, and it is 13nm that GaN builds layer, and the GaN layer thickness that p-type is mixed magnesium is about 150nm, and the concentration of its charge carrier is 3 × 10
17cm
-3.Under the operating current of 20mA, the optical output power of LED device is 3.3mW, and cut-in voltage value is 3.18V.
To one skilled in the art, can be according to technical scheme described above and design, make other various corresponding changes and deformation, and within these all changes and deformation all should belong to the protection range of the utility model claim.
Claims (4)
1. be grown in the GaN film on Si substrate, it is characterized in that, comprise Si substrate, AlN nucleating layer, Al
xga
1-xn stepping resilient coating, AlN insert layer, GaN nucleating layer and GaN film, described AlN nucleating layer, Al
xga
1-xn stepping resilient coating, AlN insert layer, GaN nucleating layer and GaN film are grown on Si substrate successively, and wherein, x is 0-1.
2. the GaN film being grown on Si substrate as claimed in claim 1, it is characterized in that, described Si substrate is taking (111) crystal face as epitaxial surface, crystal epitaxial orientation closes: GaN (0001) crystal face is parallel to Si (111) crystal face, and described AlN nucleating layer is grown on Si (111) crystal face.
3. the GaN film being grown on Si substrate as claimed in claim 1, is characterized in that described Al
xga
1-xn stepping resilient coating comprises Al
0.75ga
0.25n stepping resilient coating, Al
0.5ga
0.5n stepping resilient coating and Al
0.25ga
0.75n stepping resilient coating, described Al
0.75ga
0.25n stepping resilient coating, Al
0.5ga
0.5n stepping resilient coating and Al
0.25ga
0.75n stepping resilient coating is grown between AlN nucleating layer and AlN insert layer from top to bottom successively.
4. the GaN film being grown on Si substrate as claimed in claim 1, is characterized in that, described AlN nucleating layer thickness is 10～100nm, described Al
0.75ga
0.25the thickness of N stepping resilient coating is 50～120nm, described Al
0.5ga
0.5the thickness of N stepping resilient coating is 100～200nm, described Al
0.25ga
0.75the thickness of N stepping resilient coating is 150～300nm, and described AlN insert layer thickness is 10～50nm, and described GaN nucleating layer thickness is 200～500nm, and described GaN film thickness is 1～2 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420307702.XU CN203910838U (en) | 2014-06-10 | 2014-06-10 | GaN film grown on Si substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420307702.XU CN203910838U (en) | 2014-06-10 | 2014-06-10 | GaN film grown on Si substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203910838U true CN203910838U (en) | 2014-10-29 |
Family
ID=51785089
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| Country | Link |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104037284A (en) * | 2014-06-10 | 2014-09-10 | 广州市众拓光电科技有限公司 | GaN thin film growing on Si substrate and preparation method and applications thereof |
| CN106952856A (en) * | 2017-01-26 | 2017-07-14 | 中国科学院半导体研究所 | The preparation method of nitride nano band |
| JP7450081B1 (en) | 2023-02-28 | 2024-03-14 | 日機装株式会社 | Nitride semiconductor light emitting device |
-
2014
- 2014-06-10 CN CN201420307702.XU patent/CN203910838U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104037284A (en) * | 2014-06-10 | 2014-09-10 | 广州市众拓光电科技有限公司 | GaN thin film growing on Si substrate and preparation method and applications thereof |
| CN106952856A (en) * | 2017-01-26 | 2017-07-14 | 中国科学院半导体研究所 | The preparation method of nitride nano band |
| JP7450081B1 (en) | 2023-02-28 | 2024-03-14 | 日機装株式会社 | Nitride semiconductor light emitting device |
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