CN204067413U - The InGaN/GaN Multiple Quantum Well of growth on W substrate - Google Patents
The InGaN/GaN Multiple Quantum Well of growth on W substrate Download PDFInfo
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- CN204067413U CN204067413U CN201420369200.XU CN201420369200U CN204067413U CN 204067413 U CN204067413 U CN 204067413U CN 201420369200 U CN201420369200 U CN 201420369200U CN 204067413 U CN204067413 U CN 204067413U
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Abstract
The utility model discloses the InGaN/GaN Multiple Quantum Well of growth on W substrate, comprise the AlN resilient coating of growth on W substrate, grow the undoped GaN layer on AlN resilient coating, grow the InGaN/GaN Multiple Quantum Well in undoped GaN layer; Described AlN resilient coating is the AlN resilient coating 400 ~ 500 DEG C of growths; Described undoped GaN layer is the undoped GaN layer 500 ~ 700 DEG C of growths; Described InGaN/GaN Multiple Quantum Well is the InGaN/GaN Multiple Quantum Well 700 ~ 800 DEG C of growths.InGaN/GaN Multiple Quantum Well defect concentration of the present utility model is low, crystalline quality good, and photoelectric properties are good.
Description
Technical field
The utility model relates to nGaN/GaN Multiple Quantum Well, particularly the InGaN/GaN Multiple Quantum Well of a kind of growth on W substrate.
Background technology
Light-emitting diode (LED) is as a kind of novel solid lighting source and green light source, have that volume is little, power consumption is low, environmental protection, long service life, high brightness, the outstanding feature such as low in calories and colorful, all have a wide range of applications in fields such as outdoor lighting, commercial lighting and decorative engineerings.Current, under the background that global warming problem is increasingly severe, energy savings, reduce greenhouse gas emission become the whole world common faced by major issue.Low-carbon economy based on low energy consumption, low stain, low emission, will become the important directions of economic development.At lighting field, the application of LED luminous product is just attract the sight of common people, LED as a kind of novel green light source product, the trend of necessarily future development, the epoch that 21st century will be the novel illumination light source taking LED as representative.But the application cost of present stage LED is higher, and luminous efficiency is lower, these factors all can limit the future development of LED to high-efficient energy-saving environment friendly greatly.
Group III-nitride GaN is at electricity, optics and acoustically have extremely excellent character, is subject to extensive concern in recent years.GaN is direct band gap material, and sonic transmissions speed is fast, and chemistry and Heat stability is good, thermal conductivity is high, and thermal coefficient of expansion is low, punctures dielectric strength high, is the ideal material manufacturing efficient LED component.At present, the luminous efficiency of GaN base LED has reached 28% and in further growth now, and this numerical value is far away higher than the luminous efficiency of the lighting systems such as current normally used incandescent lamp (being about 2%) or fluorescent lamp (being about 10%).Data statistics shows, the current electric consumption on lighting of China, every year more than 4,100 hundred million degree, exceedes Britain's whole nation power consumption of a year.If replace whole incandescent lamp with LED or partly replace fluorescent lamp, the electric consumption on lighting close to half can be saved, exceed the energy output of the Three Gorges Projects whole year.The greenhouse gas emission produced because of illumination also can reduce therefore and greatly.In addition, compared with fluorescent lamp, GaN base LED not containing poisonous mercury element, and is about 100 times of this type of illuminations useful life.
LED will really realize extensive extensive use, needs the luminous efficiency improving LED chip further.Although the luminous efficiency of LED has exceeded fluorescent lamp and incandescent lamp, commercialization LED luminous efficiency still lower than sodium vapor lamp (150lm/W), unit lumens/watt on the high side.At present, the luminous efficiency of LED chip is not high enough, and main cause causes due to its Sapphire Substrate.Because the lattice mismatch of sapphire and GaN is up to 17%, causes forming very high dislocation density in extension GaN film process, thus reduce the carrier mobility of material, shorten carrier lifetime, and then have impact on the performance of GaN base device.Secondly, due to the Thermal sapphire coefficient of expansion (6.63 × 10 under room temperature
-6/ K) compared with the thermal coefficient of expansion (5.6 × 10 of GaN
-6/ K) large, thermal mismatching degree is between the two about-18.4%, and after outer layer growth terminates, device can produce very large compression from epitaxially grown High-temperature cooling to room temperature process, easily causes the be full of cracks of film and substrate.Again, due to sapphire thermal conductivity low (being 0.25W/cmK when 100 DEG C), being difficult to the heat produced in chip to discharge in time, causing thermal accumlation, the internal quantum efficiency of device is reduced, finally affect the performance of device.In addition, because sapphire is insulator, vertical structure semiconductor devices can not be made.Therefore there is lateral flow in the devices in electric current, causes CURRENT DISTRIBUTION uneven, produces more heat transfer, have impact on electricity and the optical property of GaN base LED component to a great extent.
Therefore in the urgent need to finding material that a kind of thermal conductivity heat that is high, that rapidly LED can be saved district transmits out as substrate.And metal W is as the backing material of epitaxial nitride, there is the advantage of three its uniquenesses large.The first, metal W has very high thermal conductivity, and the thermal conductivity of W is 1.74W/cmK, the heat produced in LED chip can be conducted timely, to reduce the joint district temperature of device, improve the internal quantum efficiency of device on the one hand, contribute on the other hand solving device heat dissipation problem.Second, metal W can as the backing material of the LED component of growing GaN based vertical structure, directly can plate cathode material on substrate, P-GaN plates anode material, makes electric current almost all flow vertically through the epitaxial loayer of GaN-base, thus resistance declines, there is no current crowding, homogeneous current distribution, the heat that electric current produces reduces, favourable to the heat radiation of device; In addition, by cathode material direct plating on the metallic substrate, can not need, by corrosion P-GaN layer and active layer, electrode is connected in N-GaN layer, take full advantage of the material of active layer like this.3rd, metal W backing material is other substrates relatively, and cheaper, greatly can reduce the manufacturing cost of device.Just because of above-mentioned many advantages, metal substrate is now used as the epitaxially grown backing material of group III-nitride by trial.
But, when epitaxial temperature is higher than 600 DEG C time, there is interfacial reaction between epitaxial nitride meeting and metal substrate, had a strong impact on the quality of epitaxial film growth in metal W substrate at high temperature unstable chemcial property.The people such as the epitaxially grown pioneer researcher of group III-nitride, famous scientist Akasaki just once attempted traditional MOCVD or the MBE technology of application directly at the backing material Epitaxial growth nitride that chemical property is changeable, and at high temperature extension is quite difficult to found that film.
Utility model content
In order to overcome the above-mentioned shortcoming of prior art with not enough, the purpose of this utility model is the InGaN/GaN Multiple Quantum Well providing a kind of growth on W substrate, and defect concentration is low, crystalline quality good, and photoelectric properties are good.
The purpose of this utility model is achieved through the following technical solutions:
The InGaN/GaN Multiple Quantum Well of growth on W substrate, comprises the AlN resilient coating of growth on W substrate, grows the undoped GaN layer on AlN resilient coating, grow the InGaN/GaN Multiple Quantum Well in undoped GaN layer; Described AlN resilient coating is the AlN resilient coating 400 ~ 500 DEG C of growths; Described undoped GaN layer is the undoped GaN layer 500 ~ 700 DEG C of growths; Described InGaN/GaN Multiple Quantum Well is the InGaN/GaN Multiple Quantum Well 700 ~ 800 DEG C of growths.
Described W substrate with (110) face for epitaxial surface.
The thickness of described AlN resilient coating is 80 ~ 100nm; The thickness of described undoped GaN layer is 2 ~ 4 μm; Described InGaN/GaN quantum well is the InGaN well layer/GaN barrier layer in 7 ~ 10 cycles, and wherein the thickness of InGaN well layer is 2 ~ 3nm; The thickness of GaN barrier layer is 10 ~ 13nm.
Compared with prior art, the utility model has the following advantages and beneficial effect:
(1) the utility model employs metal W as substrate, the AlN that can obtain island with outgrowth AlN resilient coating provides nucleating center for the high-quality GaN film of extension, be conducive to the GaN film of the low defect of depositing high-quality, be expected to the luminous efficiency greatly improving LED.
(2) the utility model employs W as substrate, and W substrate easily obtains, low price, is conducive to reducing production cost.
(3) the utility model adopts the method that MBE and PLD combines, and grows the high-quality GaN base film of low temperature, prepares high-quality great power LED epitaxial wafer.Application MBE grows active layer, and the extension of other layers then adopts the PLD technology of low temperature, just can complete the growth of film so at a lower temperature, avoids high-temperature interface reaction, for the film preparing the low defect of high-quality provides guarantee.
(4) the utility model has prepared high-quality InGaN/GaN Multiple Quantum Well, can as the LED component of growing GaN based vertical structure, electric current is made almost all to flow vertically through the epitaxial loayer of GaN-base, thus resistance declines, do not have current crowding, homogeneous current distribution, the heat that electric current produces reduces, to the favourable radiation recombination efficiency that improve charge carrier of the heat radiation of device, the efficiency of nitride device as semiconductor laser, light-emitting diode and solar cell can be increased substantially.
(5) metal W that the utility model preparation employing thermal conductivity is higher is as substrate, can promptly by the heat conduction in device out, improve the internal quantum efficiency of device on the one hand, help on the other hand solve device heat dissipation problem, be conducive to the life-span of improving LED component.
(6) the utility model have employed the low temperature AI N resilient coating that low temperature epitaxial techniques first grows one deck 80 ~ 100nm on W substrate.The stability of W substrate can be ensured at low temperatures, the lattice mismatch that the volatilization reducing W ion causes and violent interfacial reaction, thus lay good basis for next step high-quality epitaxial loayer.
(7) the utility model can be widely used in the fields such as semiconductor laser, light-emitting diode and solar cell, easy to utilize.
Accompanying drawing explanation
Fig. 1 is the interface schematic diagram of the InGaN/GaN Multiple Quantum Well on the W substrate of embodiment 1 of the present utility model preparation.
Fig. 2 is the XRD collection of illustrative plates of the undoped GaN film (GaN (0002)) of embodiment 1 of the present utility model preparation.
Fig. 3 is the PL collection of illustrative plates of the InGaN/GaN Multiple Quantum Well of embodiment 1 of the present utility model preparation.
Fig. 4 is the EL collection of illustrative plates of the InGaN/GaN Multiple Quantum Well of embodiment 1 of the present utility model preparation.
Embodiment
Below in conjunction with embodiment, the utility model is described in further detail, but execution mode of the present utility model is not limited thereto.
Embodiment 1
The preparation method of the InGaN/GaN Multiple Quantum Well of growth on W substrate of the present embodiment, it comprises the following steps:
(1) the choosing of substrate and its crystal orientation: epitaxial substrate adopts W substrate, with (110) face for epitaxial surface, the crystalline epitaxial orientation relationship selected: AlN (0001) //W (110), AlN [11-20] //W [001].Lattice mismatch between metal W (0001) substrate and AlN (0001) is lower, ensure that the Lattice Matching between substrate and extension, can grow high-quality AlN film.
(2) substrate surface polishing, cleaning and annealing in process:
Described substrate surface polishing, is specially:
First W substrate surface diamond mud is carried out polishing, coordinate observation by light microscope, until after substrate table do not have cut face to face, then adopt the method for chemico-mechanical polishing to carry out polishing again to substrate, reach requirement.
Described substrate surface polishing, is specially:
Substrate W being placed on pressure is 2 × 10
-10in the growth room of the ultravacuum PLD of Torr, at 850 DEG C, high-temperature baking 1h is to remove the pollutant of substrate surface.Then air cooling is to room temperature.This annealing in process can make substrate obtain the surface of atomically flating.
Described cleaning, is specially:
Substrate to be put under deionized water room temperature ultrasonic cleaning 3 minutes, remove W substrate surface pickup particle, more successively through persalt, acetone, ethanol washing, remove surface organic matter; The high-purity drying nitrogen of substrate after cleaning dries up.
(3) epitaxial growth of AlN resilient coating: underlayer temperature is risen to 400 DEG C, chamber pressure is 1 × 10
-5torr, V/III than be 50, the speed of growth is 0.4ML/s; Be 1.3J/cm with energy
2and repetition rate is that under the condition of the KrF excimer laser (λ=248nm, t=20ns) of 30Hz, growth thickness is the AlN resilient coating of 80nm.
(4) epitaxial growth of undoped GaN layer: adopt PLD epitaxial growth, underlayer temperature is risen to 500 DEG C, at chamber pressure 4 × 10
-5under Torr, V/III value 40, speed of growth 0.6ML/s condition, growing GaN film.On the GaN resilient coating that step (3) obtains, growth thickness is the undoped GaN film of 2 μm.
(5) epitaxial growth of InGaN/GaN Multiple Quantum Well: adopt MBE to grow Multiple Quantum Well, at chamber pressure 3 × 10
-5under Torr, V/III value 30, speed of growth 0.4ML/s condition, growing InGaN/GaN Multiple Quantum Well on the N-shaped Doped GaN film that step (4) obtains; Described InGaN/GaN quantum well is the InGaN well layer/GaN barrier layer in 7 cycles, and wherein the thickness of InGaN well layer is the thickness of 2nm, GaN barrier layer is 10nm.
As shown in Figure 1, the InGaN/GaN Multiple Quantum Well of growth on metal W substrate prepared by the present embodiment, comprise the AlN resilient coating 11 of growth on metal W substrate 10, grow the undoped GaN layer 12 on AlN resilient coating 11, grow the InGaN/GaN quantum well 13 in undoped GaN layer 12.
Fig. 2 is the XRD collection of illustrative plates of undoped GaN film prepared by the present embodiment.Can see from X ray swing curve, the FWHM value of GaN is lower than 0.1 °; Show to have gone out the high-quality undoped GaN film of high-quality at W (0001) face Epitaxial growth.
Fig. 3 is the PL collection of illustrative plates of InGaN/GaN Multiple Quantum Well prepared by the present embodiment.From figure, test shows that the photoluminescence wavelength of GaN is 22.5nm at 462nm, FWHM, demonstrates good photoelectric properties.
Fig. 4 is the EL collection of illustrative plates of LED prepared by the present embodiment.Emission wavelength is 463nm, FWHM is as seen from the figure 22nm, demonstrates excellent electric property.
Embodiment 2
The preparation method of the InGaN/GaN Multiple Quantum Well of growth on W substrate of the present embodiment, it comprises the following steps:
(1) the choosing of substrate and its crystal orientation: epitaxial substrate adopts W substrate, with (110) face for epitaxial surface, the crystalline epitaxial orientation relationship selected: AlN (0001) //W (110), AlN [11-20] //W [001].Lattice mismatch between metal W (0001) substrate and AlN (0001) is lower, ensure that the Lattice Matching between substrate and extension, can grow high-quality AlN film.
(2) substrate surface polishing, cleaning and annealing in process:
Described substrate surface polishing, is specially:
First W substrate surface diamond mud is carried out polishing, coordinate observation by light microscope, until after substrate table do not have cut face to face, then adopt the method for chemico-mechanical polishing to carry out polishing again to substrate, reach requirement.
Described substrate surface polishing, is specially:
Substrate W being placed on pressure is 2 × 10
-10in the growth room of the ultravacuum PLD of Torr, at 950 DEG C, high-temperature baking 2h is to remove the pollutant of substrate surface.Then air cooling is to room temperature.This annealing in process can make substrate obtain the surface of atomically flating.
Described cleaning, is specially:
Substrate to be put under deionized water room temperature ultrasonic cleaning 5 minutes, remove W substrate surface pickup particle, more successively through persalt, acetone, ethanol washing, remove surface organic matter; The high-purity drying nitrogen of substrate after cleaning dries up.
(3) epitaxial growth of AlN resilient coating: underlayer temperature is risen to 500 DEG C, chamber pressure is 3 × 10
-5torr, V/III than be 60, the speed of growth is 0.6ML/s; Be 1.3J/cm with energy
2and repetition rate is that under the condition of the KrF excimer laser (λ=248nm, t=20ns) of 30Hz, growth thickness is the GaN resilient coating of 100nm.
(4) epitaxial growth of undoped GaN layer: adopt PLD epitaxial growth, underlayer temperature is risen to 700 DEG C, at chamber pressure 5 × 10
-5under Torr, V/III value 60, speed of growth 0.8ML/s condition, growing GaN film.On the GaN resilient coating that step (3) obtains, growth thickness is the undoped GaN film of 4 μm.
(5) epitaxial growth of InGaN/GaN Multiple Quantum Well: adopt MBE to grow Multiple Quantum Well, at chamber pressure 5 × 10
-5under Torr, V/III value 60, speed of growth 0.6ML/s condition, growing InGaN/GaN Multiple Quantum Well on the N-shaped Doped GaN film that step (4) obtains; Described InGaN/GaN quantum well is the InGaN well layer/GaN barrier layer in 10 cycles, and wherein the thickness of InGaN well layer is the thickness of 3nm, GaN barrier layer is 13nm.
No matter the InGaN/GaN Multiple Quantum Well of growth on W substrate prepared by the present embodiment is on photoelectric property, or all has extraordinary performance at defect concentration, crystalline quality, and test data is close with embodiment 1, does not repeat them here.
Above-described embodiment is the utility model preferably execution mode; but execution mode of the present utility model is not limited by the examples; change, the modification done under other any does not deviate from Spirit Essence of the present utility model and principle, substitute, combine, simplify; all should be the substitute mode of equivalence, be included within protection range of the present utility model.
Claims (3)
1. the InGaN/GaN Multiple Quantum Well of growth on W substrate, is characterized in that, comprises the AlN resilient coating of growth on W substrate, grows the undoped GaN layer on AlN resilient coating, grow the InGaN/GaN Multiple Quantum Well in undoped GaN layer; Described AlN resilient coating is the AlN resilient coating 400 ~ 500 DEG C of growths; Described undoped GaN layer is the undoped GaN layer 500 ~ 700 DEG C of growths; Described InGaN/GaN Multiple Quantum Well is the InGaN/GaN Multiple Quantum Well 700 ~ 800 DEG C of growths.
2. the InGaN/GaN Multiple Quantum Well of growth according to claim 1 on W substrate, is characterized in that, described W substrate with (110) face for epitaxial surface.
3. the InGaN/GaN Multiple Quantum Well of growth according to claim 1 on W substrate, is characterized in that, the thickness of described AlN resilient coating is 80 ~ 100nm; The thickness of described undoped GaN layer is 2 ~ 4 μm; Described InGaN/GaN quantum well is the InGaN well layer/GaN barrier layer in 7 ~ 10 cycles, and wherein the thickness of InGaN well layer is 2 ~ 3nm; The thickness of GaN barrier layer is 10 ~ 13nm.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104157754A (en) * | 2014-07-03 | 2014-11-19 | 华南理工大学 | InGaN/GaN multiple quantum well growing on W substrate and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104157754A (en) * | 2014-07-03 | 2014-11-19 | 华南理工大学 | InGaN/GaN multiple quantum well growing on W substrate and preparation method thereof |
| CN104157754B (en) * | 2014-07-03 | 2017-01-11 | 华南理工大学 | InGaN/GaN multiple quantum well growing on W substrate and preparation method thereof |
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