CN104157754B - InGaN/GaN multiple quantum well growing on W substrate and preparation method thereof - Google Patents

InGaN/GaN multiple quantum well growing on W substrate and preparation method thereof Download PDF

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CN104157754B
CN104157754B CN201410317734.2A CN201410317734A CN104157754B CN 104157754 B CN104157754 B CN 104157754B CN 201410317734 A CN201410317734 A CN 201410317734A CN 104157754 B CN104157754 B CN 104157754B
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CN104157754A (en
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李国强
王文樑
刘作莲
杨为家
林云昊
周仕忠
钱慧荣
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South China University of Technology SCUT
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous

Abstract

The invention discloses an InGaN/GaN multiple quantum well growing on a W substrate. The InGaN/GaN multiple quantum well comprises an AlN buffer layer growing on the W substrate, a non-doped GaN layer growing on the AlN buffer layer and an InGaN/GaN multiple quantum well growing on the non-doped GaN layer, wherein the AlN buffer layer is the AlN buffer layer growing at 400-500 DEG C; the non-doped GaN layer is the non-doped GaN layer growing at 500-700 DEG C; the InGaN/GaN multiple quantum well is the InGaN/GaN multiple quantum well growing at 700-800 DEG C. The invention further discloses a preparation method for the InGaN/GaN multiple quantum well growing on the W substrate. The preparation method has the advantages of being simple in growth technics and low in preparation cost, and the prepared InGaN/GaN multiple quantum well is low in defect density, good in crystallization quality and good in photoelectric properties.

Description

InGaN/GaN MQW being grown on W substrate and preparation method thereof
Technical field
The present invention relates to nGaN/GaN MQW and preparation method thereof, be grown in W lining particularly to one InGaN/GaN MQW at the end and preparation method thereof.
Background technology
Light emitting diode (LED) as a kind of novel solid lighting source and green light source, have volume little, Power consumption is low, environmental protection, length in service life, high brightness, the outstanding feature such as low in calories and colorful, in outdoor The fields such as illumination, commercial lighting and decorative engineering all have a wide range of applications.Currently, become at global climate Under the background that warm problem is increasingly severe, save the energy, reduce greenhouse gas emission become the whole world common faced by Major issue.Low-carbon economy based on low energy consumption, low stain, low emission, will become economic development Important directions.At lighting field, the application of LED luminous product is just attract the sight of common people, LED conduct A kind of novel green light source product, the necessarily trend of future development, 21st century will be to be with LED The epoch of the novel illumination light source represented.But the application cost of present stage LED is higher, and luminous efficiency is relatively low, These factors all can significantly limit LED and develop to the direction of high-efficient energy-saving environment friendly.
Group III-nitride GaN is at electricity, optics and acoustically has extremely excellent character, is subject in recent years To extensive concern.GaN is direct band gap material, and sonic transmissions speed is fast, chemically and thermally good stability, Thermal conductivity is high, and thermal coefficient of expansion is low, punctures dielectric strength high, is the preferable material manufacturing efficient LED component Material.At present, the luminous efficiency of GaN base LED has reached 28% and also has further increased, This numerical value is significantly larger than current normally used electric filament lamp (about 2%) or fluorescent lamp (about 10%) etc. and shines The luminous efficiency of bright mode.Data statistics shows, the current electric consumption on lighting of China every year more than 410,000,000,000 degree, Exceed Britain's whole nation power consumption of a year.If replacing whole electric filament lamp with LED or part replacing fluorescent lamp, The electric consumption on lighting close to half can be saved, exceed the generated energy that Three Gorges Projects are annual.The temperature produced because of illumination Therefore room gas discharge also can be substantially reduced.It addition, compared with fluorescent lamp, GaN base LED is without poisonous Mercury element, and be about 100 times of this type of illuminations service life.
LED really to realize extensive extensively application, needs to improve further the luminous efficiency of LED chip. Although the luminous efficiency of LED alreadys more than daylight lamp and electric filament lamp, but commercialization LED luminous efficiency Less than sodium vapor lamp (150lm/W), unit lumens/watt on the high side.At present, the luminous efficiency of LED chip is inadequate Height, one is primarily due to what its Sapphire Substrate caused.Lattice mismatch due to sapphire Yu GaN Up to 17%, form the highest dislocation density during causing extension GaN film, thus reduce material Carrier mobility, shortens carrier lifetime, and then have impact on the performance of GaN base device.Next, by The Thermal sapphire coefficient of expansion (6.63 × 10 at room temperature-6/K) thermal coefficient of expansion (5.6 × 10 of relatively GaN-6/K) Greatly, thermal mismatching degree between the two is about-18.4%, and after outer layer growth terminates, device is from epitaxially grown height Temperature is cooled to room temperature process can produce the biggest compressive stress, is easily caused the be full of cracks of thin film and substrate.Again, Due to sapphire thermal conductivity low (being 0.25W/cmK when 100 DEG C), be difficult to the heat produced in chip and Time discharge, cause thermal accumlation, make the internal quantum efficiency of device reduce, the final performance affecting device.This Outward, it is insulator due to sapphire, it is impossible to make vertical structure semiconductor devices.Therefore electric current is in the devices There is horizontal mobility, cause CURRENT DISTRIBUTION uneven, produce more heat transfer, largely have impact on GaN base The electrical and optical properties of LED component.
Therefore in the urgent need to finding that a kind of thermal conductivity is high, heat that LED can save district rapidly passes out Material as substrate.And metal W is as the backing material of epitaxial nitride, there is the excellent of three its uniquenesses big Gesture.First, metal W has the highest thermal conductivity, and the thermal conductivity of W is 1.74W/cmK, can be by LED The heat produced in chip transfers out timely, to reduce the joint district temperature of device, on the one hand improves device Internal quantum efficiency, on the other hand contributes to solving device heat dissipation problem.Second, metal W can be as growth The backing material of the LED component of GaN base vertical stratification, directly can plate cathode material, P-GaN on substrate Upper plating anode material so that electric current almost all flows vertically through the epitaxial layer of GaN-base, thus resistance declines, Not having current crowding, homogeneous current distribution, the heat that electric current produces reduces, and the heat radiation to device is favourable；Separately Outward, can by cathode material direct plating on the metallic substrate, it is not necessary to by corrosion P-GaN layer and active layer Electrode is connected in N-GaN layer, so takes full advantage of the material of active layer.3rd, metal W backing material Other substrates, cheaper, can greatly reduce the manufacturing cost of device relatively.Just because of it is above-mentioned all Many advantages, metal substrate has been attempted as the epitaxially grown backing material of group III-nitride.
But metal W substrate at high temperature unstable chemcial property, when epitaxial temperature is higher than 600 DEG C when, There is interfacial reaction between epitaxial nitride meeting and metal substrate, have a strong impact on the quality of epitaxial film growth. Group III-nitride epitaxially grown pioneer researcher, famous scientist Akasaki et al. the most once attempted application and passed MOCVD or the MBE technology of system is directly in the backing material Epitaxial growth nitridation that chemical property is changeable Thing, found that thin film at high temperature extension is extremely difficult.
Summary of the invention
In order to overcome the disadvantages mentioned above of prior art with not enough, it is an object of the invention to provide one and be grown in InGaN/GaN MQW on W substrate, has growth technique simple, the advantage that preparation cost is cheap, And the InGaN/GaN MQW defect concentration of preparation is low, crystalline quality good, photoelectric properties are good.
The present invention also aims to provide the system of the above-mentioned InGaN/GaN MQW being grown on W substrate Preparation Method.
The purpose of the present invention is achieved through the following technical solutions:
The InGaN/GaN MQW being grown on W substrate, delays including the AlN being grown on W substrate Rush layer, the undoped GaN layer being grown on AlN cushion, it is grown in undoped GaN layer InGaN/GaN MQW；Described AlN cushion is the AlN cushion 400～500 DEG C of growths；Institute Stating undoped GaN layer is the undoped GaN layer 500～700 DEG C of growths；Described InGaN/GaN volume Sub-trap is the InGaN/GaN MQW 700～800 DEG C of growths.
Described W substrate with (110) face as epitaxial surface.
The thickness of described AlN cushion is 80～100nm；The thickness of described undoped GaN layer is 2～4 μm； Described InGaN/GaN SQW is the InGaN well layer/GaN barrier layer, wherein InGaN in 7～10 cycles The thickness of well layer is 2～3nm；The thickness of GaN barrier layer is 10～13nm.
The preparation method of the InGaN/GaN MQW being grown on W substrate, comprises the following steps:
(1) the choosing of substrate and its crystal orientation: (110) face using W substrate is epitaxial surface, outside crystal Prolong orientation relationship: AlN [11-20] //W [001]；Lattice between metal W (0001) substrate and AlN (0001) loses Degree of joining is relatively low, it is ensured that the Lattice Matching between substrate and extension, can grow high-quality AlN cushion.
(2) substrate is carried out surface finish, cleans and make annealing treatment.
(3) epitaxial growth of AlN cushion: temperature is 400～500 DEG C, chamber pressure is 1～3 × 10-5 Torr, V/III ratio are 50～60, the speed of growth is 0.4～0.6ML/s；With KrF excimer laser ablation AlN Target；At W Grown AlN cushion；At 400～500 DEG C of grown buffer layers, can effectively press down Interfacial reaction between substrate processed and thin film, provides abundant growth energy for epitaxial growth simultaneously.
(4) epitaxial growth of undoped GaN layer: using PLD technology epitaxial growth, underlayer temperature is 500～700 DEG C, at chamber pressure 4～5 × 10-5Torr, V/III value 40～60, the speed of growth 0.6～0.8ML/s Under conditions of, the AlN cushion that step (3) obtains grows undoped GaN layer.
(5) epitaxial growth of InGaN/GaN MQW: use MBE to grow MQW, in reaction Chamber pressure 3～5.0 × 10-5Under the conditions of Torr, V/III value 30～40, the speed of growth 0.4～0.6ML/s, in step (4) InGaN/GaN MQW is grown in the undoped GaN layer obtained.
Step (2) described surface finish, particularly as follows:
W substrate surface diamond mud is polished, coordinates observation by light microscope substrate surface, directly After not having cut, then the method for chemically mechanical polishing is used to be processed by shot blasting.
Step (2) described cleaning, particularly as follows:
W substrate is put in deionized water under room temperature ultrasonic cleaning 3～5 minutes, removes W substrate surface and glue Dirty granule, then sequentially pass through hydrochloric acid, acetone, washing with alcohol, remove surface organic matter, use high-purity dry nitrogen Air-blowing is done.
Step (2) described annealing, particularly as follows:
It is 2 × 10 that W substrate is placed on pressure-10In the growth room of the UHV-PLD of Torr, at 850～950 DEG C Lower high-temperature baking 1～2h is to remove the pollutant of substrate surface, and then air cooling is to room temperature.
The energy of described KrF excimer laser PLD is 1.3J/cm2, repetition rate is 30Hz, and wavelength is 248nm。
Described AlN cushion for 80～100nm；Described undoped GaN layer layer thickness is 2～4 μm；Institute State InGaN well layer that InGaN/GaN SQW is 7～10 cycles/GaN barrier layer, wherein InGaN trap The thickness of layer is 2～3nm；The thickness of GaN barrier layer is 10～13nm.80～100nm thick AlN cushions The center of forming core is provided, lays the foundation for following epitaxial growth high-quality GaN thin film.
Compared with prior art, the present invention has the following advantages and beneficial effect:
(1) present invention uses metal W as substrate, island can be obtained with outgrowth AlN cushion AlN be that the high-quality GaN film of extension provides nucleating center, beneficially depositing high-quality low defect GaN film, is expected to greatly improve the luminous efficiency of LED.
(2) present invention uses W to be readily available as substrate, W substrate, low price, be conducive to fall Low production cost.
(3) present invention uses the method that MBE and PLD combines, and grows the high-quality GaN base of low temperature Thin film, prepares high-quality great power LED epitaxial wafer.Application MBE grows active layer, other layers Extension then uses the PLD technology of low temperature, the most just can complete the growth of thin film, keep away Exempt from high-temperature interface reaction, provide guarantee for preparing the thin film of the low defect of high-quality.
(4) present invention has prepared high-quality InGaN/GaN MQW, can be as growth GaN The LED component of based vertical structure so that electric current almost all flows vertically through the epitaxial layer of GaN-base, thus electric Resistance declines, and does not has current crowding, homogeneous current distribution, and the heat that electric current produces reduces, the heat radiation to device Favorably improve the radiation recombination efficiency of carrier, can increase substantially nitride device such as semiconductor laser, Light emitting diode and the efficiency of solaode.
(5) present invention prepares the higher metal W of employing thermal conductivity as substrate, it is possible to promptly by device Interior heat conducts out, on the one hand improves the internal quantum efficiency of device, on the other hand helps solve device scattered Heat problem, is conducive to improving the life-span of LED component.
(6) present invention employs low temperature epitaxial techniques on W substrate, first grow one layer 80～100nm low Temperature AlN cushion.Can guarantee that the stability of W substrate, the volatilization of minimizing W ion cause at low temperatures Lattice mismatch and violent interfacial reaction, thus the high-quality epitaxial layer for next step lays good basis.
(7) the composite can be widely applied to the fields such as semiconductor laser, light emitting diode and solaode, Easy to utilize.
Accompanying drawing explanation
Fig. 1 is that the interface of the InGaN/GaN MQW on the W substrate of embodiments of the invention 1 preparation shows It is intended to.
Fig. 2 is the XRD figure of the undoped GaN film (GaN (0002)) of embodiments of the invention 1 preparation Spectrum.
Fig. 3 is the PL collection of illustrative plates of the InGaN/GaN MQW of embodiments of the invention 1 preparation.
Fig. 4 is the EL collection of illustrative plates of the InGaN/GaN MQW of embodiments of the invention 1 preparation.
Detailed description of the invention
Below in conjunction with embodiment, the present invention is described in further detail, but embodiments of the present invention are not It is limited to this.
Embodiment 1
The preparation method of the InGaN/GaN MQW being grown on W substrate of the present embodiment, it include with Lower step:
(1) the choosing of substrate and its crystal orientation: epitaxial substrate uses W substrate, with (110) face as epitaxial surface, The crystalline epitaxial orientation relationship selected: AlN (0001) //W (110), AlN [11-20] //W [001].Metal W (0001) lattice mismatch between substrate and AlN (0001) is relatively low, it is ensured that the lattice between substrate and extension Join, high-quality AlN thin film can be grown.
(2) substrate surface polishes, cleans and make annealing treatment:
Described substrate surface polishes, particularly as follows:
First W substrate surface diamond mud is polished, coordinates observation by light microscope, until lining After end table does not has cut face to face, then the method for chemically mechanical polishing is used substrate to be processed by shot blasting again, Reach requirement.
Described substrate surface polishes, particularly as follows:
It is 2 × 10 that substrate W is placed on pressure-10In the growth room of ultravacuum PLD of Torr, at 850 DEG C High-temperature baking 1h is to remove the pollutant of substrate surface.Then air cooling is to room temperature.This annealing can make substrate Obtain the surface of atomically flating.
Described cleaning, particularly as follows:
Place the substrate in deionized water ultrasonic cleaning 3 minutes under room temperature, remove W substrate surface pickup granule, Sequentially pass through hydrochloric acid, acetone, washing with alcohol again, remove surface organic matter；Substrate after cleaning is with high-purity dry Dry nitrogen dries up.
(3) epitaxial growth of AlN cushion: underlayer temperature rises to 400 DEG C, chamber pressure is 1 × 10-5 Torr, V/III ratio are 50, the speed of growth is 0.4ML/s；It is 1.3J/cm with energy2And repetition rate is Under conditions of the KrF excimer laser (λ=248nm, t=20ns) of 30Hz, growth thickness is the AlN of 80nm Cushion.
(4) epitaxial growth of undoped GaN layer: use PLD epitaxial growth, underlayer temperature is risen to 500 DEG C, at chamber pressure 4 × 10-5Under the conditions of Torr, V/III value 40, speed of growth 0.6ML/s, raw Long GaN film.On the GaN cushion that step (3) obtains, growth thickness is undoped GaN of 2 μm Thin film.
(5) epitaxial growth of InGaN/GaN MQW: use MBE to grow MQW, in reaction Chamber pressure 3 × 10-5Under the conditions of Torr, V/III value 30, speed of growth 0.4ML/s, obtain in step (4) N-shaped doping GaN film on grow InGaN/GaN MQW；Described InGaN/GaN SQW is 7 InGaN well layer/GaN the barrier layer in individual cycle, wherein the thickness of InGaN well layer is 2nm, GaN barrier layer Thickness is 10nm.
As it is shown in figure 1, the InGaN/GaN MQW being grown on metal W substrate prepared by the present embodiment, Including the AlN cushion 11 being grown on metal W substrate 10, it is grown in the undoped on AlN cushion 11 GaN layer 12, the InGaN/GaN SQW 13 being grown in undoped GaN layer 12.
Fig. 2 is the XRD figure spectrum of undoped GaN film prepared by the present embodiment.From X-ray swing curve In it will be seen that the FWHM value of GaN is less than 0.1 °；Show to go out at W (0001) face Epitaxial growth High-quality high-quality undoped GaN film.
Fig. 3 is the PL collection of illustrative plates of InGaN/GaN MQW prepared by the present embodiment.Test from figure and show The photoluminescence wavelength of GaN is 22.5nm at 462nm, FWHM, demonstrates good photoelectric properties.
Fig. 4 is the EL collection of illustrative plates of LED prepared by the present embodiment.Emission wavelength is 463 as seen from the figure Nm, FWHM are 22nm, demonstrate the electric property of excellence.
Embodiment 2
The preparation method of the InGaN/GaN MQW being grown on W substrate of the present embodiment, it include with Lower step:
(1) the choosing of substrate and its crystal orientation: epitaxial substrate uses W substrate, with (110) face as epitaxial surface, The crystalline epitaxial orientation relationship selected: AlN (0001) //W (110), AlN [11-20] //W [001].Metal W (0001) lattice mismatch between substrate and AlN (0001) is relatively low, it is ensured that the lattice between substrate and extension Join, high-quality AlN thin film can be grown.
(2) substrate surface polishes, cleans and make annealing treatment:
Described substrate surface polishes, particularly as follows:
First W substrate surface diamond mud is polished, coordinates observation by light microscope, until lining After end table does not has cut face to face, then the method for chemically mechanical polishing is used substrate to be processed by shot blasting again, Reach requirement.
Described substrate surface polishes, particularly as follows:
It is 2 × 10 that substrate W is placed on pressure-10In the growth room of ultravacuum PLD of Torr, at 950 DEG C High-temperature baking 2h is to remove the pollutant of substrate surface.Then air cooling is to room temperature.This annealing can make substrate Obtain the surface of atomically flating.
Described cleaning, particularly as follows:
Place the substrate in deionized water ultrasonic cleaning 5 minutes under room temperature, remove W substrate surface pickup granule, Sequentially pass through hydrochloric acid, acetone, washing with alcohol again, remove surface organic matter；Substrate after cleaning is with high-purity dry Dry nitrogen dries up.
(3) epitaxial growth of AlN cushion: underlayer temperature rises to 500 DEG C, chamber pressure is 3 × 10-5 Torr, V/III ratio are 60, the speed of growth is 0.6ML/s；It is 1.3J/cm with energy2And repetition rate is Under conditions of the KrF excimer laser (λ=248nm, t=20ns) of 30Hz, growth thickness is 100nm's GaN cushion.
(4) epitaxial growth of undoped GaN layer: use PLD epitaxial growth, underlayer temperature is risen to 700 DEG C, at chamber pressure 5 × 10-5Under the conditions of Torr, V/III value 60, speed of growth 0.8ML/s, raw Long GaN film.On the GaN cushion that step (3) obtains, growth thickness is undoped GaN of 4 μm Thin film.
(5) epitaxial growth of InGaN/GaN MQW: use MBE to grow MQW, in reaction Chamber pressure 5 × 10-5Under the conditions of Torr, V/III value 60, speed of growth 0.6ML/s, obtain in step (4) N-shaped doping GaN film on grow InGaN/GaN MQW；Described InGaN/GaN SQW is 10 InGaN well layer/GaN the barrier layer in individual cycle, wherein the thickness of InGaN well layer is 3nm, GaN barrier layer Thickness is 13nm.
The InGaN/GaN MQW that prepared by the present embodiment be grown on W substrate is either at photoelectric property On, or at defect concentration, crystalline quality, all there is extraordinary performance, test data and embodiment 1 phase Closely, do not repeat them here.
Above-described embodiment is the present invention preferably embodiment, but embodiments of the present invention are not by described reality Execute the restriction of example, the change made under other any spirit without departing from the present invention and principle, modification, Substitute, combine, simplify, all should be the substitute mode of equivalence, within being included in protection scope of the present invention.

Claims (4)

1. the preparation method of the InGaN/GaN MQW being grown on W substrate, it is characterised in that bag Include following steps:
(1) the choosing of substrate and its crystal orientation: (110) face using W substrate is epitaxial surface, outside crystal Prolong orientation relationship: AlN [11-20] //W [001]；
(2) substrate is carried out surface finish, cleans and make annealing treatment；
(3) epitaxial growth of AlN cushion: temperature is 400～500 DEG C, chamber pressure is 1～3 × 10-5 Torr, V/III ratio are 50～60, the speed of growth is 0.4～0.6ML/s；With KrF excimer laser ablation AlN Target；At W Grown AlN cushion；
(4) epitaxial growth of undoped GaN layer: using PLD technology epitaxial growth, underlayer temperature is 500～700 DEG C, at chamber pressure 4～5 × 10-5Torr, V/III value 40～60, the speed of growth 0.6～0.8ML/s Under the conditions of, the AlN cushion that step (3) obtains grows undoped GaN layer；
(5) epitaxial growth of InGaN/GaN MQW: use MBE to grow MQW, in reaction Chamber pressure 3～5.0 × 10-5Under conditions of Torr, V/III value 30～40, the speed of growth 0.4～0.6ML/s, in step Suddenly InGaN/GaN MQW is grown in the undoped GaN layer that (4) obtain.
The preparation of the InGaN/GaN MQW being grown on W substrate the most according to claim 1 Method, it is characterised in that step (2) described surface finish, particularly as follows:
W substrate surface diamond mud is polished, coordinates observation by light microscope substrate surface, directly After not having cut, then the method for chemically mechanical polishing is used to be processed by shot blasting.
The preparation of the InGaN/GaN MQW being grown on W substrate the most according to claim 1 Method, it is characterised in that the energy of described KrF excimer laser PLD is 1.3J/cm2, repetition rate is 30Hz, wavelength is 248nm.
The preparation of the InGaN/GaN MQW being grown on W substrate the most according to claim 1 Method, it is characterised in that described AlN cushion for 80～100nm；Described undoped GaN layer thickness Degree is 2～4 μm；Described InGaN/GaN SQW is the InGaN well layer/GaN barrier layer in 7～10 cycles, Wherein the thickness of InGaN well layer is 2～3nm；The thickness of GaN barrier layer is 10～13nm.
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