CN203950831U - Be grown in the LED epitaxial wafer of Cu substrate - Google Patents
Be grown in the LED epitaxial wafer of Cu substrate Download PDFInfo
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- CN203950831U CN203950831U CN201420289187.7U CN201420289187U CN203950831U CN 203950831 U CN203950831 U CN 203950831U CN 201420289187 U CN201420289187 U CN 201420289187U CN 203950831 U CN203950831 U CN 203950831U
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Abstract
The utility model discloses a kind of LED epitaxial wafer of the Cu of being grown in substrate, comprise Cu substrate, AlN resilient coating, U-GaN thin layer, N-GaN thin layer, InGaN/GaN multiple quantum well layer and P-GaN film, described AlN resilient coating, U-GaN thin layer, N-GaN thin layer, InGaN/GaN multiple quantum well layer and P-GaN film are grown on Cu substrate successively.The utility model adopts low-temperature epitaxy technique epitaxial growth GaN film on metal Cu Novel substrate, has obtained high-quality LED epitaxial wafer; The metal Cu substrate adopting, growth technique is simple, low price, can significantly reduce the manufacturing cost of device; By selecting suitable crystal orientation, the high-quality GaN epitaxial film obtaining on Cu (111) substrate, can increase substantially nitride device as the efficiency of photodetector.
Description
Technical field
The utility model relates to a kind of LED epitaxial wafer, particularly relates to a kind of LED epitaxial wafer of the Cu of being grown in substrate.
Background technology
Light-emitting diode (LED) is as a kind of novel solid lighting source and green light source, have that volume is little, power consumption is low, environmental protection, long service life, high brightness, the outstanding feature such as low in calories and colorful, in fields such as outdoor lighting, commercial lighting and decorative engineerings, all have a wide range of applications.Current, under the increasingly severe background of global warming problem, energy savings, reduce greenhouse gas emission and become the major issue that the whole world is faced jointly.Take low energy consumption, low pollution, low emission is basic low-carbon economy, will become the important directions of economic development.At lighting field, the application of LED luminous product is just attracting common people's sight, and LED, as a kind of novel green light source product, must be the trend of future development, and 21st century take epoch of the novel illumination light source that LED is representative being.But the application cost of present stage LED is higher, and luminous efficiency is lower, these factors all can limit LED greatly to the future development of high-efficient energy-saving environment friendly.
III group-III nitride GaN has extremely excellent character on electricity, optics and acoustics, is subject in recent years extensive concern.GaN is direct band gap material, and sonic transmissions speed is fast, chemistry and Heat stability is good, and thermal conductivity is high, and thermal coefficient of expansion is low, punctures dielectric strength high, is the ideal material of manufacturing efficient LED device.At present, the luminous efficiency of GaN base LED has reached 28% and in further growth now, and this numerical value is far away higher than the luminous efficiency of the lighting systems such as current normally used incandescent lamp (being about 2%) or fluorescent lamp (being about 10%).Data statistics shows, the current electric consumption on lighting of China more than 4,100 hundred million degree, surpasses Britain's whole nation power consumption of a year every year.If replace whole incandescent lamps or partly replace fluorescent lamp with LED, can save the electric consumption on lighting that approaches half, surpass the Three Gorges Projects energy output of the whole year.Therefore the greenhouse gas emission producing because of illumination also can reduce greatly.In addition, compare with fluorescent lamp, GaN base LED is containing poisonous mercury element, and is about 100 times of this type of illuminations useful life.
LED will really realize extensive extensive use, needs further to improve the luminous efficiency of LED chip.Although the luminous efficiency of LED has surpassed fluorescent lamp and incandescent lamp, commercialization LED luminous efficiency or lower than sodium vapor lamp (150lm/W), unit lumens/watt on the high side.At present, the luminous efficiency of LED chip is not high enough, and a main cause is because its Sapphire Substrate causes.Because the lattice mismatch of sapphire and GaN is up to 17%, cause forming in extension GaN thin-film process very high dislocation density, thereby reduced the carrier mobility of material, shorten carrier lifetime, and then affected the performance of GaN base device.Secondly, due to sapphire thermal coefficient of expansion (6.63 * 10 under room temperature
-6/ K) compared with the thermal coefficient of expansion of GaN (5.6 * 10
-6/ K) large, thermal mismatching degree is between the two about-18.4%, and after outer layer growth finishes, device can produce very large compression from epitaxially grown High-temperature cooling to room temperature process, easily causes the be full of cracks of film and substrate.Again, due to sapphire thermal conductivity low (100 ℃ time be 0.25W/cmK), be difficult to the heat producing in chip to discharge in time, cause thermal accumlation, the internal quantum efficiency of device is reduced, finally affect the performance of device.In addition,, because sapphire is insulator, can not make vertical structure semiconductor devices.Therefore there is lateral flow in electric current in device, causes CURRENT DISTRIBUTION inhomogeneous, produces more heat transfer, affected to a great extent electricity and the optical property of GaN base LED device.
Therefore the material that the urgent heat of finding the high JiangLEDJie rapidly of a kind of thermal conductivity district transmits is out as substrate.And metal Cu is as the backing material of extension nitride, there are four large its unique advantages.The first, metal Cu has very high thermal conductivity, and the thermal conductivity of Cu is 4.19W/cmK, the heat producing in LED chip can be conducted timely, to reduce device Jie district temperature, improve on the one hand the internal quantum efficiency of device, contribute on the other hand to solve device heat dissipation problem.Second, metal Cu can be used as the backing material of the LED device of growing GaN based vertical structure, can directly on substrate, plate cathode material, the upper plating of P-GaN anode material, make electric current almost all vertical currents cross the epitaxial loayer of GaN-base, thereby resistance declines, there is no current crowding, CURRENT DISTRIBUTION is even, and the heat that electric current produces reduces, favourable to the heat radiation of device; In addition, cathode material directly can be plated in metal substrate, not need, by corrosion P-GaN layer and active layer, electrode is connected in to N-GaN layer, take full advantage of like this material of active layer.The 3rd, metal Cu backing material is other substrates relatively, and cheaper can greatly reduce the manufacturing cost of device.The 4th, the light through substrate surface can be reflected in smooth metal Cu surface, thereby improves the light extraction efficiency of LED.Just because of above-mentioned many advantages, metal substrate is now attempted as the epitaxially grown backing material of III group-III nitride.
But metal Cu substrate is at unstable chemcial property, when epitaxial temperature is higher than 620 ℃ time, between the meeting of extension nitride and metal substrate, there is interfacial reaction, had a strong impact on the quality of epitaxial film growth.The people such as the epitaxially grown pioneer researcher of III group-III nitride, famous scientist Akasaki just once attempted directly epitaxial growth nitride on the changeable backing material of chemical property of the traditional MOCVD of application or MBE technology, and at high temperature extension is quite difficult to found that film.How the LED epitaxial wafer at Cu substrate growing high-quality is still a technical problem.
Utility model content
In order to overcome the deficiencies in the prior art, the purpose of this utility model is to provide a kind of LED epitaxial wafer of the Cu of being grown in substrate, and the utility model adopts low-temperature epitaxy technique epitaxial growth GaN film on metal Cu Novel substrate, has obtained high-quality LED epitaxial wafer; The metal Cu substrate adopting, growth technique is simple, low price, can significantly reduce the manufacturing cost of device; By selecting suitable crystal orientation, the high-quality GaN epitaxial film obtaining on Cu (111) substrate, can increase substantially nitride device as the efficiency of photodetector.
For addressing the above problem, the technical scheme that the utility model adopts is as follows:
Be grown in the LED epitaxial wafer of Cu substrate, comprise Cu substrate, AlN resilient coating, U-GaN thin layer, N-GaN thin layer, InGaN/GaN multiple quantum well layer and P-GaN film, described AlN resilient coating, U-GaN thin layer, N-GaN thin layer, InGaN/GaN multiple quantum well layer and P-GaN film are grown on Cu substrate successively.
Preferably, it is epitaxial surface that described Cu substrate be take (111) crystal face, and it is AlN[11-20 that crystal epitaxial orientation closes] //Cu[1-10].
Preferably, described AlN buffer layer thickness is 100nm; Described U-GaN thin layer thickness is 200-350nm; Described N-GaN thin layer thickness is 4000-5000nm; In described InGaN/GaN multiple quantum well layer, InGaN trap layer thickness is 3-5nm, and GaN barrier layer thickness is 10-15nm, and periodicity is 5-10; Described P-GaN film thickness is 300-400nm.
Compared to existing technology, the beneficial effects of the utility model are:
1, the utility model has been used metal Cu as substrate, with outgrowth AlN resilient coating, can obtain lattice mismatch very low between substrate and GaN epitaxial loayer, is conducive to the GaN film of the low defect of depositing high-quality, has improved greatly the luminous efficiency of LED;
2, the utility model has been used Cu as substrate, and Cu substrate easily obtains, and low price is conducive to reduce production costs;
3, the metal Cu that the utility model preparation employing thermal conductivity is higher is as substrate, can promptly the heat in device be conducted out, improve on the one hand the internal quantum efficiency of device, help on the other hand solve device heat dissipation problem, be conducive to improve the life-span of LED device;
4, the utility model has adopted first grow on the Cu substrate low temperature AI N resilient coating of one deck 100nm of low-temperature epitaxy technology; Can guarantee the stability of Cu substrate at low temperatures, reduce lattice mismatch and violent interfacial reaction that the volatilization of Cu ion causes, thereby lay good basis for next step high-quality epitaxial loayer;
In sum, the utility model technology growth substrate is unconventional, growth technique is unique and simple, have repeatable, epitaxially grown GaN base LED epitaxial wafer defect concentration is low, crystal mass is high, the advantages such as electricity and optical property excellence, can be widely used in the fields such as LED device, semiconductor photo detector, solar cell device, easy to utilize.
Accompanying drawing explanation
Fig. 1 is the LED epitaxial slice structure schematic diagram that is grown in Cu substrate in the utility model;
Fig. 2 is the HRXRD collection of illustrative plates of the LED epitaxial wafer of embodiment 1 preparation in the utility model;
Fig. 3 is the luminescence generated by light collection of illustrative plates of the LED epitaxial wafer of embodiment 1 preparation in the utility model;
Fig. 4 is the electroluminescence collection of illustrative plates of the LED epitaxial wafer of embodiment 1 preparation in the utility model;
Fig. 5 is the HRXRD collection of illustrative plates of the LED epitaxial wafer of embodiment 2 preparations in the utility model;
Fig. 6 is the luminescence generated by light collection of illustrative plates of the LED epitaxial wafer of embodiment 2 preparations in the utility model;
Fig. 7 is the electroluminescence collection of illustrative plates of the LED epitaxial wafer of embodiment 2 preparations in the utility model;
Wherein, 1 is that Cu substrate, 2 is that AlN resilient coating, 3 is that U-GaN thin layer, 4 is that N-GaN thin layer, 5 is that InGaN/GaN multiple quantum well layer 6 is P-GaN film.
Embodiment
Below in conjunction with the drawings and specific embodiments, the utility model is described in further detail.
As shown in Figure 1, for being grown in the LED epitaxial wafer of Cu substrate in the utility model, comprise Cu substrate 1, AlN resilient coating 2, U-GaN thin layer 3, N-GaN thin layer 4, InGaN/GaN multiple quantum well layer 5 and P-GaN film 6, described AlN resilient coating 2, U-GaN thin layer 3, N-GaN thin layer 4, InGaN/GaN multiple quantum well layer 5 and P-GaN film 6 are grown on Cu substrate 1 successively.
In preferred version, it is epitaxial surface that described Cu substrate 1 be take (111) crystal face, and it is AlN[11-20 that crystal epitaxial orientation closes] //Cu[1-10]; Described AlN buffer layer thickness is 100nm; Described U-GaN thin layer thickness is 200-350nm; Described N-GaN thin layer thickness is 4000-5000nm; In described InGaN/GaN multiple quantum well layer, InGaN trap layer thickness is 3-5nm, and GaN barrier layer thickness is 10-15nm, and periodicity is 5-10; Described P-GaN film thickness is 300-400nm.
Embodiment 1
The preparation method who is grown in the LED epitaxial wafer of Cu substrate, comprises the following steps:
1) substrate with and the choosing of crystal orientation: adopt Cu substrate, (111) face of take is epitaxial surface, and crystal epitaxial orientation closes and is: AlN[11-20] //Cu[1-10];
2) substrate surface polishing, cleaning and annealing in process: first, Cu substrate surface is carried out to polishing with diamond mud, coordinate observation by light microscope substrate surface, until do not have after cut, then adopt the method for chemico-mechanical polishing to carry out polishing; Secondly, Cu substrate is put into ultrasonic cleaning 5min under deionized water room temperature, remove Cu substrate surface pickup particle, more successively through acetone, ethanol washing, remove surface organic matter, with high-purity drying nitrogen, dry up; Finally, Cu substrate being put into pressure is 2 * 10
-10in the growth room of the UHV-PLD of Torr, high-temperature process 1h in 550 ℃ of air, is then cooled to room temperature.
3) in step 2) carry out successively the epitaxial growth of AlN resilient coating, U-GaN thin layer, N-GaN thin layer, InGaN/GaN multiple quantum well layer and P-GaN film on Cu substrate after processing, described in obtaining, be grown in the LED epitaxial wafer of Cu substrate.
The epitaxial growth of AlN resilient coating: Cu (111) substrate 10 temperature are down to 550 ℃, and chamber pressure is 10 * 10
-3torr, V/III ratio are 50, with energy, are 3.0J/cm
2and repetition rate KrF excimer laser (λ=248nm, t=20ns) the PLD ablation AlN target (99.99%) that is 20Hz, when depositing Al N resilient coating, the internal pressure N of growth room
2(99.9999%) remain on 10 * 10
-3torr, the low temperature AI N resilient coating of the 100nm that grows under speed of growth 0.6ML/s condition;
U-GaN thin layer adopts PLD epitaxial growth, underlayer temperature is risen to 700 ℃, at chamber pressure 4 * 10
-3under Torr, V/III value 40, speed of growth 0.8ML/s condition, with energy, be 3.0J/cm
2and repetition rate KrF excimer laser (λ=248nm, t=20ns) PLD that is 20Hz for ablation target Ga (99.9999%) and radio frequency plasma free-radical generator be used as nitrogenous source and on AlN resilient coating, react and generate the U-GaN thin layer that thickness is 200nm.
N-GaN thin layer adopts PLD epitaxial growth, and the thickness of its epitaxial loayer is 5000nm, and the concentration of its charge carrier is 1 * 10
19cm
-3.Growth conditions is that temperature is down to 500 ℃, at chamber pressure 4 * 10
-3under Torr, V/III value 40, speed of growth 0.8ML/s condition, with energy, be 3.0J/cm
2and repetition rate KrF excimer laser (λ=248nm, t=20ns) PLD that is 20Hz for ablation target Ga (99.9999%) and radio frequency plasma free-radical generator be used as nitrogenous source and on N-GaN thin layer, react and generate N-GaN thin layer.
InGaN/GaN multiple quantum well layer adopts MBE epitaxial growth, and temperature rises to 750 ℃, at chamber pressure 4 * 10
-5under Torr, V/III value 40, speed of growth 0.6ML/s condition, with energy, be 3.0J/cm
2and the repetition rate KrF excimer laser (λ=248nm that is 20Hz, t=20ns) for PLD ablation, target Ga (99.9999%) and radio frequency plasma free-radical generator are used as nitrogenous source reaction and generate InGaN/GaN multiple quantum well layer, wherein InGaN trap layer is 3nm, building layer is 13nm, 7 periodicities of growing, thickness is 112nm.
P-GaN film adopts PLD epitaxial growth, and temperature is down to 500 ℃, at chamber pressure 4 * 10
-10under Torr, V/III value 40, speed of growth 0.8ML/s condition, with energy, be 3.0J/cm
2and the repetition rate KrF excimer laser (λ=248nm that is 20Hz, t=20ns) for PLD ablation, target Ga (99.9999%) and radio frequency plasma free-radical generator are used as nitrogenous source and on InGaN/GaN multiple quantum well layer, react and generate P-GaN film, thickness is 350nm, and its carrier concentration is 2 * 10
16cm
-3, last electron beam evaporation forms ohmic contact, makes the LED epitaxial wafer that is grown in Cu substrate.
Fig. 2 is the HRXRD collection of illustrative plates of the LED epitaxial wafer prepared of the present embodiment, from X ray swing curve, can see, half-peak breadth (FWHM) value of the X ray swing curve of GaN (0002), lower than 0.06 degree, demonstrates very high crystal property.
Fig. 3 is the luminescence generated by light collection of illustrative plates of the LED epitaxial wafer prepared of the present embodiment, from luminescence generated by light, can see, photoluminescence wavelength is at 442nm, and FWHM is 22.5nm, demonstrates good photoelectric properties.
Fig. 4 is the electroluminescence collection of illustrative plates of the LED epitaxial wafer prepared of the present embodiment, and emission wavelength is 432nm as seen from the figure, and FWHM is 22nm, has demonstrated the excellent electric property of the utility model LED device.
Prepared by the present embodiment is grown in LED epitaxial wafer on metal Cu substrate for the preparation of semiconductor photo detector: be grown on the AlN film on metal Cu the substrate non-Doped GaN of epitaxial growth, the N-type successively at the present embodiment, prepared are mixed the GaN that silicon GaN, P type mix magnesium, and last electron beam evaporation forms ohmic contact and schottky junction.Wherein N-type is mixed silicon GaN thickness and is about 3 μ m, and the concentration of its charge carrier is 1 * 10
19cm
-3; Non-Doped GaN thickness is about 200nm, and its carrier concentration is 2.2 * 10
16cm
-3; The GaN degree that P type is mixed magnesium is about 1.5 μ m.The prepared photodetector of the present embodiment is under 1V bias voltage, and dark current is only 66pA, and device is under 1V bias voltage, in the maximum of 361nm place responsiveness, has reached 0.91A/W.
Prepared by the present embodiment is grown in LED epitaxial wafer on metal Cu substrate for the preparation of solar cell device: that at the present embodiment, prepares is grown on the AlN film on metal Cu substrate the non-Doped GaN of epitaxial growth, In successively
xga
1-xn resilient coating, N-type are mixed silicon In
xga
1-xn, P type are mixed the In of magnesium
xga
1-xn, last electron beam evaporation forms ohmic contact and schottky junction.Wherein growth has the In of component gradient
xga
1-xthe value of N resilient coating x can be adjustable between 0-0.2, and the N-type of then growing is mixed silicon In
xga
1-xn, the thickness of epitaxial loayer is about 5 μ m, and the concentration of its charge carrier is 1 * 10
19cm
-3.Then In grows
xga
1-xn multiple quantum well layer, thickness is about 300nm, and periodicity is 20, wherein In
0.2ga
0.8n trap layer is 3nm, In
0.08ga
0.92it is 10nm that N builds layer.The P type In of regrowth Mg doping
xga
1-xn layer, thickness is about 200nm, and its carrier concentration is 2 * 10
16cm
-3, last electron beam evaporation forms ohmic contact.Pass through at N on this basis
2under atmosphere, anneal, improved carrier concentration and the mobility of P type InGaN film; Be prepared into InGaN solar cell device.
Testing result shows, is no matter character or in application, the correlated results of the LED that the application Sapphire Substrate that is all better than having reported at present obtains, has a good application prospect.
Embodiment 2
The preparation method who is grown in the LED epitaxial wafer of Cu substrate, comprises the following steps:
1) substrate with and the choosing of crystal orientation: adopt Cu substrate, (111) face of take is epitaxial surface, and crystal epitaxial orientation closes and is: AlN[11-20] //Cu[1-10];
2) substrate surface polishing, cleaning and annealing in process: first, Cu substrate surface is carried out to polishing with diamond mud, coordinate observation by light microscope substrate surface, until do not have after cut, then adopt the method for chemico-mechanical polishing to carry out polishing; Secondly, Cu substrate is put into ultrasonic cleaning 4min under deionized water room temperature, remove Cu substrate surface pickup particle, more successively through acetone, ethanol washing, remove surface organic matter, with high-purity drying nitrogen, dry up; Finally, Cu substrate being put into pressure is 2 * 10
-10in the growth room of the UHV-PLD of Torr, high-temperature process 2h in 650 ℃ of air, is then cooled to room temperature.
3) in step 2) carry out successively the epitaxial growth of AlN resilient coating, U-GaN thin layer, N-GaN thin layer, InGaN/GaN multiple quantum well layer and P-GaN film on Cu substrate after processing, described in obtaining, be grown in the LED epitaxial wafer of Cu substrate.
The epitaxial growth of AlN resilient coating: Cu (111) substrate 10 temperature are down to 550 ℃, and chamber pressure is 10 * 10
-3torr, V/III ratio are 60, with energy, are 3.0J/cm
2and repetition rate KrF excimer laser (λ=248nm, t=20ns) the PLD ablation AlN target (99.99%) that is 20Hz, when depositing Al N resilient coating, the internal pressure N of growth room
2(99.9999%) remain on 10 * 10
-3torr, the low temperature AI N resilient coating of the 100nm that grows under speed of growth 0.6ML/s condition;
U-GaN thin layer adopts PLD epitaxial growth, underlayer temperature is risen to 700 ℃, at chamber pressure 3.5 * 10
-3under Torr, V/III value 40, speed of growth 0.75ML/s condition, with energy, be 3.0J/cm
2and repetition rate KrF excimer laser (λ=248nm, t=20ns) PLD that is 20Hz for ablation target Ga (99.9999%) and radio frequency plasma free-radical generator be used as nitrogenous source and on AlN resilient coating, react and generate the U-GaN thin layer that thickness is 300nm.
N-GaN thin layer adopts PLD epitaxial growth, and the thickness of its epitaxial loayer is 4500nm, and the concentration of its charge carrier is 1 * 10
19cm
-3.Growth conditions is that temperature is down to 500 ℃, at chamber pressure 4 * 10
-4under Torr, V/III value 40, speed of growth 0.8ML/s condition, with energy, be 3.0J/cm
2and repetition rate KrF excimer laser (λ=248nm, t=20ns) PLD that is 20Hz for ablation target Ga (99.9999%) and radio frequency plasma free-radical generator be used as nitrogenous source and on N-GaN thin layer, react and generate N-GaN thin layer.
InGaN/GaN multiple quantum well layer adopts MBE epitaxial growth, and temperature rises to 750 ℃, at chamber pressure 1 * 10
-5under Torr, V/III value 40, speed of growth 0.6ML/s condition, growing InGaN/GaN multiple quantum well layer, wherein InGaN trap layer is 3nm, building layer is 13nm, 7 periodicities of growing, thickness is 112nm.
P-GaN film adopts PLD epitaxial growth, and temperature is down to 500 ℃, at chamber pressure 3.5 * 10
-5under Torr, V/III value 40, speed of growth 0.7ML/s condition, with energy, be 3.0J/cm
2and the repetition rate KrF excimer laser (λ=248nm that is 20Hz, t=20ns) for PLD ablation, target Ga (99.9999%) and radio frequency plasma free-radical generator are used as nitrogenous source and on InGaN/GaN multiple quantum well layer, react and generate P-GaN film, thickness is 400nm, and its carrier concentration is 2 * 10
16cm
-3, last electron beam evaporation forms ohmic contact, makes the LED epitaxial wafer that is grown in Cu substrate.
Fig. 5 is the HRXRD collection of illustrative plates of the LED epitaxial wafer prepared of the present embodiment, from X ray swing curve, can see, half-peak breadth (FWHM) value of the X ray swing curve of GaN (0002), lower than 0.06 degree, demonstrates very high crystal property.
Fig. 6 is the luminescence generated by light collection of illustrative plates of the LED epitaxial wafer prepared of the present embodiment, from luminescence generated by light, can see, photoluminescence wavelength is at 442nm, and FWHM is 22.5nm, demonstrates good photoelectric properties.
Fig. 7 is the electroluminescence collection of illustrative plates of the LED epitaxial wafer prepared of the present embodiment, and emission wavelength is 432nm as seen from the figure, and FWHM is 22nm, has demonstrated the excellent electric property of the utility model LED device.
Prepared by the present embodiment is grown in LED epitaxial wafer on metal Cu substrate for the preparation of semiconductor photo detector: be grown on the AlN film on metal Cu the substrate non-Doped GaN of epitaxial growth, the N-type successively at the present embodiment, prepared are mixed the GaN that silicon GaN, P type mix magnesium, and last electron beam evaporation forms ohmic contact and schottky junction.Wherein P type is mixed silicon GaN thickness and is about 3 μ m, and the concentration of its charge carrier is 1 * 10
19cm
-3; Non-Doped GaN thickness is about 200nm, and its carrier concentration is 2.2 * 10
16cm
-3; The GaN degree that P type is mixed magnesium is about 1.5 μ m.The prepared photodetector of the present embodiment is under 1V bias voltage, and dark current is only 66pA, and device is under 1V bias voltage, in the maximum of 361nm place responsiveness, has reached 0.91A/W.
Prepared by the present embodiment is grown in LED epitaxial wafer on metal Cu substrate for the preparation of solar cell device: that at the present embodiment, prepares is grown on the AlN film on metal Cu substrate the non-Doped GaN of epitaxial growth, In successively
xga
1-xn resilient coating, N-type are mixed silicon In
xga
1-xn, P type are mixed the In of magnesium
xga
1-xn, last electron beam evaporation forms ohmic contact and schottky junction.Wherein growth has the In of component gradient
xga
1-xthe value of N resilient coating x can be adjustable between 0-0.2, and the N-type of then growing is mixed silicon In
xga
1-xn, the thickness of epitaxial loayer is about 5 μ m, and the concentration of its charge carrier is 1 * 10
19cm
-3.Then In grows
xga
1-xn multiple quantum well layer, thickness is about 300nm, and periodicity is 20, wherein In
0.2ga
0.8n trap layer is 3nm, In
0.08ga
0.92it is 10nm that N builds layer.The P type In of regrowth Mg doping
xga
1-xn layer, thickness is about 200nm, and its carrier concentration is 2 * 10
16cm
-3, last electron beam evaporation forms ohmic contact.Pass through at N on this basis
2under atmosphere, anneal, improved carrier concentration and the mobility of P type InGaN film; Be prepared into InGaN solar cell device.
Testing result shows, is no matter character or in application, the correlated results of the LED epitaxial wafer that the application Sapphire Substrate that is all better than having reported at present obtains, has a good application prospect.
To one skilled in the art, can make other various corresponding changes and deformation according to technical scheme described above and design, and within these all changes and deformation all should belong to the protection range of the utility model claim.
Claims (2)
1. be grown in the LED epitaxial wafer of Cu substrate, it is characterized in that, comprise Cu substrate, AlN resilient coating, U-GaN thin layer, N-GaN thin layer, InGaN/GaN multiple quantum well layer and P-GaN film, described AlN resilient coating, U-GaN thin layer, N-GaN thin layer, InGaN/GaN multiple quantum well layer and P-GaN film are grown on Cu substrate successively.
2. the LED epitaxial wafer that is grown in Cu substrate as claimed in claim 1, is characterized in that, described AlN buffer layer thickness is 100nm; Described U-GaN thin layer thickness is 200-350nm; Described N-GaN thin layer thickness is 4000-5000nm; In described InGaN/GaN multiple quantum well layer, InGaN trap layer thickness is 3-5nm, and GaN barrier layer thickness is 10-15nm, and periodicity is 5-10; Described P-GaN film thickness is 300-400nm.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103996758A (en) * | 2014-05-30 | 2014-08-20 | 广州市众拓光电科技有限公司 | LED epitaxial wafer growing on Cu substrate and preparing method and application of LED epitaxial wafer |
| CN106057640A (en) * | 2016-05-27 | 2016-10-26 | 清华大学 | Semiconductor structure and method for preparing semiconductor structure |
| CN109545921A (en) * | 2018-12-13 | 2019-03-29 | 广东工业大学 | A kind of LED chip, LED epitaxial wafer and preparation method thereof |
| CN111009467A (en) * | 2019-12-06 | 2020-04-14 | 华南理工大学 | GaN rectifier based on Cu substrate base and preparation method thereof |
-
2014
- 2014-05-30 CN CN201420289187.7U patent/CN203950831U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103996758A (en) * | 2014-05-30 | 2014-08-20 | 广州市众拓光电科技有限公司 | LED epitaxial wafer growing on Cu substrate and preparing method and application of LED epitaxial wafer |
| CN106057640A (en) * | 2016-05-27 | 2016-10-26 | 清华大学 | Semiconductor structure and method for preparing semiconductor structure |
| CN109545921A (en) * | 2018-12-13 | 2019-03-29 | 广东工业大学 | A kind of LED chip, LED epitaxial wafer and preparation method thereof |
| CN111009467A (en) * | 2019-12-06 | 2020-04-14 | 华南理工大学 | GaN rectifier based on Cu substrate base and preparation method thereof |
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