CN104037291B - A kind of semi-polarity GaN film being grown on patterned silicon substrate and preparation method thereof - Google Patents
A kind of semi-polarity GaN film being grown on patterned silicon substrate and preparation method thereof Download PDFInfo
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- CN104037291B CN104037291B CN201410256346.8A CN201410256346A CN104037291B CN 104037291 B CN104037291 B CN 104037291B CN 201410256346 A CN201410256346 A CN 201410256346A CN 104037291 B CN104037291 B CN 104037291B
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- 239000000758 substrate Substances 0.000 title claims abstract description 97
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 48
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 47
- 239000010703 silicon Substances 0.000 title claims abstract description 46
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 239000013078 crystal Substances 0.000 claims abstract description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
- 238000000137 annealing Methods 0.000 claims description 12
- 229910000069 nitrogen hydride Inorganic materials 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 description 31
- 230000000694 effects Effects 0.000 description 6
- 230000010287 polarization Effects 0.000 description 5
- 230000033228 biological regulation Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000002269 spontaneous effect Effects 0.000 description 4
- 238000005286 illumination Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000005699 Stark effect Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000005431 greenhouse gas Substances 0.000 description 2
- 230000035876 healing Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910001868 water Inorganic materials 0.000 description 2
- 241001062009 Indigofera Species 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 230000005701 quantum confined stark effect Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
The present invention relates to a kind of semi-polarity GaN film being grown on patterned silicon substrate, the semi-polarity GaN film include Si substrates and Si substrates (001) crystal face toward (111) crystal face of Si substrates towards the AlN film layers of epitaxial growth, intermediate layer and epitaxial layer successively.Present invention additionally comprises the preparation method of the GaN film, comprise the following steps：Si substrates are etched pattern treatment and then successively epitaxial AlN layer, intermediate layer and epitaxial layer.The semi-polarity GaN film and preparation method being grown on patterned silicon substrate of the invention, with quality it is high, performance is good, low cost and other advantages.
Description
Technical field
The present invention relates to a kind of semi-polarity GaN film and preparation method thereof, patterned silicon is grown in more particularly, to one kind
Semi-polarity GaN film on substrate and preparation method thereof.
Background technology
Light emitting diode (LED) as a kind of novel solid lighting source and green light source, with small volume, power consumption
The outstanding feature such as low, environmentally friendly, long service life, high brightness, low in calories and colorful, in outdoor lighting, commercial lighting and dress
The fields such as decorations engineering all have a wide range of applications.Currently, under the increasingly severe background of global warming problem, energy is saved
Source, reduction greenhouse gas emission turn into the major issue that the whole world faces jointly.Based on low energy consumption, low stain, low emission
Low-carbon economy, will turn into the important directions of economic development.In lighting field, the application of LED luminous products is just attract common people's
Sight, LED as a kind of new green light source product, the necessarily trend of future development, 21st century will be with LED
The epoch of the novel illumination light source of representative.But the application cost of LED is higher at this stage, and luminous efficiency is relatively low, these factors are all
LED can significantly be limited to develop to the direction of high-efficient energy-saving environment friendly.
III- group-III nitrides GaN is in electricity, optics and acoustically has extremely excellent property, in recent years by extensive
Concern.GaN is direct band gap material, and sonic transmissions speed is fast, chemically and thermally good stability, and thermal conductivity is high, thermal coefficient of expansion
It is low, puncture that dielectric strength is high, it is the ideal material for manufacturing efficient LED component.At present, the luminous efficiency of GaN base LED is present
Through reaching 28% and also further increasing, the numerical value be significantly larger than usually used at present incandescent lamp (about 2%) or
The luminous efficiency of the lighting systems such as fluorescent lamp (about 10%).Data statistics shows that the current electric consumption on lighting of China exists every year
More than 410000000000 degree, more than Britain's whole nation power consumption of a year.If replacing whole incandescent lamps or part substitution fluorescence with LED
Lamp, can save the electric consumption on lighting close to half, the generated energy annual more than Three Gorges Projects.The greenhouse gases produced by illumination are arranged
Therefore put can also substantially reduce.In addition, compared with fluorescent lamp, GaN base LED is free of poisonous mercury element, and service life is about
It is 100 times of such illuminations.
But, due to present GaN base LED, that polar surface is all based on greatly is built-up.Because GaN edges [0001] direction is growth
That is polarized on direction is discontinuous, and interface forms the free electron gas of two dimension, causes very strong internal electric field (magnitude is MV/cm),
Although this requires that the device of high mobility is favourable [10] for some, on polar surface GaN, electronics is with hole barycenter not
Overlap, easily form electric dipole, produce spontaneous polarization field and piezoelectric polarization fields, and then cause quantum to fetter Stark effect
(Quantum-confined Starker Effect, QCSE), causes band curvature, inclines, and separates electronics and hole, carries
The radiation recombination efficiency reduction of son, the luminous efficiency of final influence LED are flowed, and causes the unstable of LED emission wavelengths, light is composed
Existing Red Shift Phenomena, this again limits the development of high-power high efficiency white light LEDs to a certain extent.
Although having the quantum constraint Stark effect that various theoretical methods can overcome polarity effect to cause, from feasibility
From the point of view of analysis, desired effects are not attained by.Such as solved to polarize the energy band inclination for causing with the method for doping shielding, by
In the presence of strong internal electric field, it is desirable to which carrier concentration is more than 1019cm-3, and this is clearly infeasible；Also it has been proposed that using life
Symmetry long is high, do not produce the Cubic structure of spontaneous polarization phenomena with solve problem, but because Emission in Cubic is metastable state, wants
Obtain high-quality Cubic structure film undoubtedly and increase technical difficulty.And nonpolar/semi-polarity side nitride film is because of energy
The influence of the piezoelectricity and spontaneous polarization effect of conventional polar plane nitride LED is prevented effectively from or weakened, increases radiation recombination
Probability, greatly improve the luminous efficiency of device, increasingly paid attention to by scientific research personnel.That generally acknowledges in the world at present is maximally effective
Method, that is, growing nonpolar face or semi-polarity face film, i.e., be not parallel to polar axis by growing the direction of growth
[0001] film in direction, to avoid or weaken the influence of film itself spontaneous polarization effect, and in the feelings without shear stress
Under condition, the influence of piezo-electric effect also will greatly weaken.
In addition, in terms of substrate, it is sapphire and SiC that usual GaN base LED prepares used substrate.But due to indigo plant
Jewel substrate price is higher, causes LED chip price to be at this stage in a level higher.Secondly as sapphire thermal conductivity
Rate is low (being 25W/m.K at 100 DEG C), it is difficult to the heat produced in chip is discharged in time, causes thermal accumlation, reduces device
Internal quantum efficiency so that finally influence device performance.It is for SiC, although in the absence of above-mentioned shortcoming but high
Price constrains its application；In addition, the patent that SiC substrate prepares GaN base LED only rests in a small number of foreign corporations on hand.
Therefore we are in the urgent need to finding a kind of cheap, novel substrate with high heat conductance.
Si substrates are due to ripe preparation technology, crystalline quality high, and cheap price, up to 100W/m.K
Thermal conductivity, become and prepare one of best selection of GaN base LED component substrate.But the huge lattice mismatch between GaN
(16.9%) substantial amounts of threading dislocation and thermal mismatching (54%), can be produced in growth course, or even is produced in temperature-fall period
Introduce Zhang Yinli and crack.Additionally, the alloy congruent melting phenomenon existed between Ga and Si is also easily caused during extension
Generation melt back etching phenomenon occurs, and a large amount of melt back etching holes occurs so as to cause surface, and then cause extension to fail.Problem above
Also exactly restriction Si substrates prepare the subject matter of LED component.
The content of the invention
In order to overcome the shortcoming and deficiency of prior art, figure is grown in using one kind it is an object of the invention to provide one kind
Semi-polarity GaN film on shape silicon substrate and preparation method thereof.
To solve the above problems, the technical solution adopted in the present invention is as follows：
A kind of semi-polarity GaN film being grown on patterned silicon substrate, the semi-polarity GaN film include Si substrates with
And Si substrates (001) crystal face toward (111) crystal face of Si substrates towards AlN film layers of epitaxial growth successively, intermediate layer and
Epitaxial layer；
The intermediate layer is a floor height pressure, the semi-polarity GaN layer of low V/III ratio；
The epitaxial layer is one layer of low pressure, the semi-polarity GaN layer of V/III ratio high；
The Si substrates are patterned silicon substrate, and it is equal, parallel to each other that the patterned silicon substrate is provided with multiple spacing
Triangular groove, parallel to (111) crystal face of Si substrates, i.e. (001) crystal face with Si substrates is in for the side of triangular groove
54.74 ° of angles.In the present invention program, the high pressure, low V/III are than preferably pressure 500-600torr, V/V than being 500-
700；The low pressure, high V/III are than preferably pressure 100-200torr, V/V than being 2000-4000.
In the present invention, preferred scheme is that the triangular groove width on the graphical Si substrates is 1 μm, and depth is
0.707μm。
In the present invention, preferred scheme is that described adjacent triangle groove is closely coupled.
A kind of preparation method of the semi-polarity GaN film being grown on patterned silicon substrate, in turn includes the following steps：
A. Si substrates are taken, multiple triangular grooves is then etched with a si substrate, the wherein side of triangular groove is put down
Row in { 111 } crystal face (race) of Si substrates, i.e., is in 54.74 with (001) crystal face of Si substrates°Angle；
B. in (001) crystal face one layer of AlN film layer of Epitaxial growth of the Si substrates by a step process；
C. in the floor height pressure of AlN film layers Epitaxial growth one, the semi-polarity GaN intermediate layers of low V/V ratio；
D. in the middle of high pressure, the semi-polarity of low V/V ratio one layer of low pressure of GaN layer Epitaxial growth, V/V ratio high half-shadow
Property GaN layer.
In the present invention, preferred scheme is also to include step a1 between a, b step：To be served as a contrast by the Si of a step process
Cleaned, made annealing treatment in bottom.
In the present invention, preferred scheme is specially for the cleaning in a1 steps, annealing process：Rinse is cleaned with deionized water
30 times；Then blown off with nitrogen gun；It is put into reative cell at 1050 DEG C through row high-temperature thermal annealing.
In the present invention, preferred scheme is for the concrete technology of b step：Underlayer temperature is 960-1100 DEG C, in the Si
One layer of Al atomic layer is overlay on substrate, NH is then passed through3By the nitridation of Al atomic layers, extension AlN bufferings on the AlN layers after nitridation
Layer, its thickness is 50-100nm.
In the present invention, preferred scheme is for the concrete technology of step c：Underlayer temperature is 960-1000 DEG C, reaction chamber pressure
Power is 500-600torr, adjusts NH3V/V ratio with TMGa is 500-700.By high pressure, low V/III than mode control
Nucleation density so that nucleated areas are concentrated mainly on (111) face.Ensure that follow-up epitaxial surface is semi-polarity face after healing.
In the present invention, preferred scheme is for the concrete technology of Step d：Underlayer temperature is 1020-1030 DEG C, reaction chamber pressure
Power is 100-200torr, adjusts NH3V/V ratio with TMGa is 2000-4000.High by V/III by low pressure, height promotes GaN thin
Film heals, and obtains semi-polarity face.
In the present invention, gallium source, silicon source, the nitrogen source respectively trimethyl that preferred scheme is used by the epitaxial growth
Gallium, trimethyl aluminium, ammonia.
Compared with prior art, it is an advantage of the invention that：Single-orientated half of extension is difficult to compared to traditional (001) face
Polar GaN film, the present invention is by using silicon (111) face the characteristics of be easy to extension (0002) face GaN, by silicon (111) face
Deflection so that the GaN after healing is oriented to (1-101) face, is that the extension for further realizing semi-polarity LED component has established base
Plinth.Additionally, the masks such as evaporation SiN, SiO are needed using patterned silicon substrate epitaxial semi-polarity GaN film compared to others, this
Invention does not need the step then, simplifies processing step, has saved cost.
Below in conjunction with the accompanying drawings and specific embodiment is described in further detail to the present invention.
Brief description of the drawings
Fig. 1 Fig. 1 is the schematic top plan view of patterned silicon substrate described in present example 1；
Fig. 2 is the schematic cross-section of patterned silicon substrate described in present example 1；
Fig. 3 is the structural representation of semi-polarity GaN film described in present example 1.
1st, patterned silicon substrate；11st, triangular groove；110th, first side；111st, second side；2nd, AlN film layers；3、
Intermediate layer；4th, epitaxial layer.
Specific embodiment
Embodiment 1
With reference to Fig. 1-3.A kind of semi-polarity GaN film being grown on patterned silicon substrate, it is characterised in that：The half-shadow
Property GaN film include Si substrates 1 and Si substrates 1 (001) crystal face toward (111) crystal face of Si substrates 1 towards extension successively
The AlN film layers 2 of growth, intermediate layer 3 and epitaxial layer 4；
The intermediate layer is a floor height pressure, the semi-polarity GaN layer of low V/III ratio；
The epitaxial layer is one layer of low pressure, the semi-polarity GaN layer of V/III ratio high；
The Si substrates are patterned silicon substrate 1, and it is equal, parallel to each other that the patterned silicon substrate is provided with multiple spacing
Triangular groove, (111) crystal face of the side of triangular groove parallel to Si substrates.
Triangular groove width on the Si substrates is 1 μm, and depth is 0.707 μm
The adjacent triangle groove of the graphical Si substrates is closely coupled
The preparation method of growth GaN film on a silicon substrate, comprises the following steps：
Patterned silicon substrate for extension semi-polarity face GaN film includes silicon substrate body 1, in silicon substrate body surface
The triangular groove 11 of etching, triangular groove includes first side 110 and second side 111, and it is with the angle of plane
54.7°。
Substrate is cleaned and made annealing treatment, and the cleaning and annealing process detailed process are：Using the HF solution of high concentration
(HF:H2O=1:1) etched for a long time；Rinse 30 times is cleaned with deionized water again；Finally blown off with nitrogen gun；
It is put into reative cell at 1050 DEG C through row high-temperature thermal annealing.
Underlayer temperature is 1100 DEG C, and one layer of Al atomic layer is overlay on a silicon substrate, is then passed through NH3By Al atomic layer nitrogen
Change.
Underlayer temperature is 1100 DEG C, extension AlN cushions on the AlN layers after the nitridation described in (3), and its thickness is
50nm。
Underlayer temperature is 1000 DEG C, and reaction cavity pressure is 500torr.Regulation NH3V/V ratio with TMGa is 500, extension
GaN intermediate layers.
Underlayer temperature is 1030 DEG C, and reaction cavity pressure is 200torr.Regulation NH3V/V ratio with TMGa is 2000, outward
Prolong GaN layer.
As shown in figure 3, the present embodiment prepares the semi-polarity GaN film being grown on patterned silicon substrate, including it is graphical
Silicon substrate body 1, growth AlN cushions 2 on a silicon substrate, the raw GaN intermediate layers 3 on AlN cushions are grown in GaN
GaN film 4 on intermediate layer.
Embodiment 2
A kind of semi-polarity GaN film being grown on patterned silicon substrate, it is characterised in that：The semi-polarity GaN film
Including Si substrates and Si substrates (001) crystal face toward Si substrates (111) crystal face towards epitaxial growth successively AlN films
Layer, intermediate layer and epitaxial layer；
The intermediate layer is a floor height pressure, the semi-polarity GaN layer of low V/III ratio；
The epitaxial layer is one layer of low pressure, the semi-polarity GaN layer of V/III ratio high；
The Si substrates are patterned silicon substrate, multiple spacing are etched with the patterned silicon substrate equal, mutually equal
Capable triangular groove, (111) crystal face of the side of triangular groove parallel to Si substrates.
The triangular groove width etched on the Si substrates is 1 μm, and depth is 0.707 μm
The adjacent triangle groove that the graphical Si substrate etch goes out is closely coupled
The preparation method of growth GaN film on a si substrate, comprises the following steps：
Patterned silicon substrate for extension semi-polarity face GaN film includes silicon substrate body, in silicon substrate body surface
Two sides of the triangular groove of etching, i.e., itself and the angle of plane are 54.7 °.
Substrate is cleaned and made annealing treatment, and the cleaning and annealing process detailed process are：Using the HF solution of high concentration
(HF:H2O=1:1) etched for a long time；Rinse 30 times is cleaned with deionized water again；Finally blown off with nitrogen gun；
It is put into reative cell at 1050 DEG C through row high-temperature thermal annealing.
Underlayer temperature is 960 DEG C, and one layer of Al atomic layer is overlay on a silicon substrate, is then passed through NH3By the nitridation of Al atomic layers.
Underlayer temperature is 960 DEG C, extension AlN cushions on the AlN layers after the nitridation described in (3), and its thickness is
100nm。
Underlayer temperature is 10200 DEG C, and reaction cavity pressure is 600torr.Regulation NH3V/V ratio with TMGa is 700, outward
Prolong GaN intermediate layers.
Underlayer temperature is 1050 DEG C, and reaction cavity pressure is 100torr.Regulation NH3V/V ratio with TMGa is 4000, outward
Prolong GaN layer.
Above-mentioned implementation method is only the preferred embodiment of the present invention, it is impossible to limit the scope of protection of the invention with this,
The change and replacement of any unsubstantiality that those skilled in the art is done on the basis of of the invention belong to institute of the present invention
Claimed scope.
Claims (8)
1. a kind of semi-polarity GaN film being grown on patterned silicon substrate, it is characterised in that：The semi-polarity GaN film bag
Include Si substrates and Si substrates (001) crystal face toward Si substrates (111) crystal face towards epitaxial growth successively AlN films
Layer, intermediate layer and epitaxial layer；
The intermediate layer is a floor height pressure, the semi-polarity GaN layer of low V/III ratio；
The epitaxial layer is one layer of low pressure, the semi-polarity GaN layer of V/III ratio high；
The Si substrates are patterned silicon substrate, and the patterned silicon substrate is provided with the triangle that spacing is equal, be parallel to each other
Groove, (111) crystal face of the side of triangular groove parallel to Si substrates；Triangular groove width on the Si substrates is 1 μ
M, depth is 0.707 μm；The adjacent triangle groove of the graphical Si substrates is closely coupled.
2. the preparation method of the semi-polarity GaN film being grown on patterned silicon substrate according to claim 1, its feature
It is in turn include the following steps：
A. Si substrates are taken, multiple triangular grooves are then etched on a si substrate, wherein the side of triangular groove parallel to
(111) crystal face of Si substrates；
B. in (001) crystal face one layer of AlN film layer of Epitaxial growth of the Si substrates by a step process；
C. in the floor height pressure of AlN film layers Epitaxial growth one, the semi-polarity GaN intermediate layers of low V/III ratio；
D. in high pressure, one layer of low pressure of semi-polarity GaN intermediate layers Epitaxial growth of low V/III ratio, the semi-polarity of V/III ratio high
GaN layer.
3. the preparation method of the semi-polarity GaN film being grown on patterned silicon substrate according to claim 2, its feature
It is also to include step a1 between a, b step：To be cleaned by the Si substrates of a step process, made annealing treatment.
4. the preparation method of the semi-polarity GaN film being grown on patterned silicon substrate according to claim 3, its feature
It is that cleaning in a1 steps, annealing process are specially：Rinse 30 times is cleaned with deionized water；Then blown with nitrogen gun
Only；It is put into reative cell at 1050 DEG C through row high-temperature thermal annealing.
5. the preparation method of the semi-polarity GaN film being grown on patterned silicon substrate according to claim 2, its feature
The concrete technology for being b step is：Underlayer temperature is 960-1100 DEG C, and one layer of Al atomic layer is overlay on the Si substrates, is connect
And be passed through NH3It is 50-100nm by the nitridation of Al atomic layers, extension AlN cushions on the AlN layers after nitridation, its thickness.
6. the preparation method of the semi-polarity GaN film being grown on patterned silicon substrate according to claim 2, its feature
The concrete technology for being step c is：Underlayer temperature is 960-1000 DEG C, and reaction cavity pressure is 500-600torr, adjusts NH3With
The V/III of TMGa is than being 500-700.
7. the preparation method of the semi-polarity GaN film being grown on patterned silicon substrate according to claim 2, its feature
The concrete technology for being Step d is：Underlayer temperature is 1020-1030 DEG C, and reaction cavity pressure is 100-200torr, adjusts NH3With
The V/III of TMGa is than being 2000-4000.
8. the preparation method of the semi-polarity GaN film being grown on patterned silicon substrate according to claim 2, its feature
It is：Gallium source, silicon source, the nitrogen source that the epitaxial growth is used respectively trimethyl gallium, trimethyl aluminium, ammonia.
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| CN201410256346.8A CN104037291B (en) | 2014-06-10 | 2014-06-10 | A kind of semi-polarity GaN film being grown on patterned silicon substrate and preparation method thereof |
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| CN201410256346.8A CN104037291B (en) | 2014-06-10 | 2014-06-10 | A kind of semi-polarity GaN film being grown on patterned silicon substrate and preparation method thereof |
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| CN108538972A (en) * | 2018-04-28 | 2018-09-14 | 华南理工大学 | Nonpolar ultraviolet LED and its preparation and application on a kind of graphical Si substrates |
| CN109509818B (en) * | 2018-09-25 | 2019-12-10 | 华灿光电(苏州）有限公司 | Epitaxial wafer of light emitting diode and preparation method thereof |
| CN109560172B (en) * | 2018-10-26 | 2020-01-10 | 复旦大学 | Semi-polar gallium-nitrogen epitaxial wafer and preparation method thereof |
| CN114220892B (en) * | 2021-12-17 | 2024-02-09 | 福建中晶科技有限公司 | Strip-shaped composite substrate for LED epitaxy and preparation method and preparation device thereof |
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| CN101397693A (en) * | 2008-10-28 | 2009-04-01 | 厦门乾照光电有限公司 | Method for high quality single crystal indium nitride film growth |
| CN102208497A (en) * | 2011-04-22 | 2011-10-05 | 中山大学 | Preparation method of semi-polarity or nonpolar GaN composite substrate on silicon substrate |
| CN102534769A (en) * | 2012-03-21 | 2012-07-04 | 中国科学院半导体研究所 | Method for growing gallium nitride epitaxial structure on patterned substrate |
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| CN101397693A (en) * | 2008-10-28 | 2009-04-01 | 厦门乾照光电有限公司 | Method for high quality single crystal indium nitride film growth |
| CN102208497A (en) * | 2011-04-22 | 2011-10-05 | 中山大学 | Preparation method of semi-polarity or nonpolar GaN composite substrate on silicon substrate |
| CN102534769A (en) * | 2012-03-21 | 2012-07-04 | 中国科学院半导体研究所 | Method for growing gallium nitride epitaxial structure on patterned substrate |
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