CN203339206U - InGaN/GaN multi-quantum well growing on La(0.3)Sr(1.7)AlTaO6 substrate - Google Patents
InGaN/GaN multi-quantum well growing on La(0.3)Sr(1.7)AlTaO6 substrate Download PDFInfo
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- CN203339206U CN203339206U CN2013203126623U CN201320312662U CN203339206U CN 203339206 U CN203339206 U CN 203339206U CN 2013203126623 U CN2013203126623 U CN 2013203126623U CN 201320312662 U CN201320312662 U CN 201320312662U CN 203339206 U CN203339206 U CN 203339206U
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Abstract
The utility model discloses an InGaN/GaN multi-quantum wells growing on a La(0.3)Sr(1.7)AlTaO6 substrate. The InGaN/GaN multi-quantum well comprises a GaN buffer layer growing on the La(0.3)Sr(1.7)AlTaO6 substrate, a non-doped GaN layer growing on the GaN buffer layer and an InGaN/GaN quantum well growing on the non-doped GaN layer. According to the InGaN/GaN multi-quantum well prepared in the utility model, the photoluminescence peak position is 441 nm, the half-peak width is 24.3 nm, and good optical performance is displayed. Compared to the prior art, the InGaN/GaN multi-quantum well is advantageous in that the growth technology is simple, preparation cost is low, the crystallization quality of the prepared InGaN/GaN multi-quantum well is good, and the optical performance is good.
Description
Technical field
The utility model relates to the InGaN/GaN Multiple Quantum Well, particularly is grown in strontium aluminate tantalum lanthanum (La
0.3sr
1.7alTaO
6, be called for short LSAT) and InGaN/GaN Multiple Quantum Well on substrate.
Background technology
Light-emitting diode (LED) is as a kind of novel solid lighting source and green light source, have that volume is little, power consumption is low, environmental protection, long service life, high brightness, the outstanding feature such as low in calories and colorful, in fields such as outdoor lighting, commercial lighting and decorative engineerings, all have a wide range of applications.Current, in the global warming problem under increasingly severe background, energy savings, reduce greenhouse gas emission and become the major issue that the whole world is faced jointly.Take low energy consumption, low pollute, low emission is basic low-carbon economy, will become the important directions of economic development.At lighting field, the application of LED luminous product is just attracting common people's sight, and LED, as a kind of novel green light source product, must be the trend of future development, and 21st century will be to take epoch of the novel illumination light source that LED is representative.But the application cost of present stage LED is higher, and luminous efficiency is lower, these factors all can limit the future development of LED to high-efficient energy-saving environment friendly greatly.
III hi-nitride semiconductor material GaN has extremely excellent character on electricity, optics and acoustics, is subject in recent years extensive concern.GaN is the direct band gap material, and sonic transmissions speed is fast, chemistry and Heat stability is good, and thermal conductivity is high, and thermal coefficient of expansion is low, punctures dielectric strength high, is the ideal material of manufacturing efficient LED device.At present, the luminous efficiency of GaN base LED has reached 28% and in further growth now, and this numerical value is far away higher than the luminous efficiency of the lighting systems such as current normally used incandescent lamp (being about 2%) or fluorescent lamp (being about 10%).Data statistics shows, China surpasses Britain's whole nation power consumption of a year at current electric consumption on lighting every year more than 4,100 hundred million degree.If replace whole incandescent lamps or partly replace fluorescent lamp with LED, can save the electric consumption on lighting that approaches half, surpass the Three Gorges Projects energy output of the whole year.Therefore the greenhouse gas emission produced because of illumination also can reduce greatly.In addition, with fluorescent lamp, compare, GaN base LED is containing poisonous mercury element, and is about 100 times of this type of illuminations useful life.
LED will really realize extensive extensive use, needs further to improve the luminous efficiency of LED chip.Although the luminous efficiency of LED has surpassed fluorescent lamp and incandescent lamp, commercialization LED luminous efficiency or lower than sodium vapor lamp (150lm/W), unit lumens/watt on the high side.At present, the luminous efficiency of LED chip is not high enough, and a main cause is because its Sapphire Substrate causes.Up to 17%, cause in extension GaN thin-film process forming very high dislocation density due to the lattice mismatch of sapphire and GaN, thereby reduced the carrier mobility of material, shortened carrier lifetime, and then affected the performance of GaN base device.Secondly, due to sapphire thermal coefficient of expansion (6.63 * 10 under room temperature
-6k
-1) than the thermal coefficient of expansion of GaN (5.6 * 10
-6k
-1) large, thermal mismatching degree between the two is about-18.4%, and after outer layer growth finishes, device can produce very large compression from epitaxially grown High-temperature cooling to room temperature process, easily causes the be full of cracks of film and substrate.Again, due to sapphire thermal conductivity low (being 25W/m.K during 100 ° of C), be difficult to the heat produced in chip is discharged in time, cause thermal accumlation, the internal quantum efficiency of device is reduced, finally affect the performance of device.Therefore the urgent backing material of finding a kind of Lattice Matching and matched coefficients of thermal expansion is applied to epitaxial growth GaN film.
As everyone knows, preparing high-quality InGaN/GaN Multiple Quantum Well is the basis of high-effect high-quality GaN base LED epitaxial wafer, so on Novel substrate, epitaxial growth prepares focus and the difficult point that high-quality InGaN/GaN Multiple Quantum Well is research always.
The utility model content
For the above-mentioned shortcoming that overcomes prior art, with not enough, the purpose of this utility model is to provide the InGaN/GaN Multiple Quantum Well be grown on strontium aluminate tantalum lanthanum substrate, has that defect concentration is low, crystalline quality good, the advantage that luminescent properties is good.
The purpose of this utility model is achieved through the following technical solutions:
Be grown in the InGaN/GaN Multiple Quantum Well on strontium aluminate tantalum lanthanum substrate, comprise and be grown in La
0.3sr
1.7alTaO
6gaN resilient coating on substrate, be grown in the non-Doped GaN layer on the GaN resilient coating, is grown in the InGaN/GaN quantum well on non-Doped GaN layer.
Described La
0.3sr
1.7alTaO
6substrate take (111) face partially 0.5～1 °, (100) direction be epitaxial surface.
The thickness of described GaN resilient coating is 50～80nm; Thickness 200～the 300nm of non-Doped GaN layer; The InGaN trap layer that described InGaN/GaN quantum well is 7～10 cycles/GaN builds layer, and wherein the thickness of InGaN trap layer is 2～3nm; The thickness that GaN builds layer is 10～13nm.
Be grown in the preparation method of the InGaN/GaN Multiple Quantum Well on strontium aluminate tantalum lanthanum substrate, comprise the following steps:
(1) substrate with and the choosing of crystal orientation: adopt La
0.3sr
1.7alTaO
6substrate, take (111) face partially 0.5～1 °, (100) direction be epitaxial surface, crystal epitaxial orientation pass is: (0001) face of GaN is parallel to La
0.3sr
1.7alTaO
6(111) face, GaN (0001) //La
0.3sr
1.7alTaO
6(111).La
0.3sr
1.7alTaO
6(111) direction has the six side symmetry identical with GaN, the La of Emission in Cubic
0.3sr
1.7alTaO
6(111) lattice parameter is
thereby six sides' La
0.3sr
1.7alTaO
6(111) lattice parameter
this numerical value is just approximate is the lattice parameter of GaN
twice, lattice mismatch is low to moderate 0.1%, has guaranteed the Lattice Matching between substrate and extension; Due to GaN and La
0.3sr
1.7alTaO
6lattice mismatch is little, La
0.3sr
1.7alTaO
6thermal coefficient of expansion be 5.8 * 10
-6k
-1, the thermal coefficient of expansion of GaN is 5.6 * 10
-6k
-1, the thermal mismatching degree is low to moderate 3.6%, and so low thermal mismatching degree is unfavorable for the formation of stress, contributes to grow high quality GaN film by MOCVD.
(2) substrate surface polishing, cleaning and annealing in process, the detailed process of described annealing is: substrate is put into to annealing chamber, under 800～900 ° of C in air atmosphere to La
0.3sr
1.7alTaO
6substrate carries out annealing in process, and within 3～5 hours, then air cooling is to room temperature, and annealing in process can make substrate obtain the surface of atomically flating.
(3) GaN resilient coating epitaxial growth: underlayer temperature is adjusted to 450～550 ° of C, at the pressure of reative cell, is 6.0～7.2 * 10
-5growing GaN resilient coating under the condition that Pa, V/III value are 50～60, the speed of growth is 0.4～0.6ML/s; At 450～550 ° of C grown buffer layers, can effectively suppress the interfacial reaction between substrate and film, provide abundant growth energy for epitaxial growth simultaneously.
(4) epitaxial growth of non-Doped GaN layer: adopting molecular beam epitaxial growth technique, substrate is remained on to 500-600 ° of C, is 4.0～5.0 * 10 at the pressure of reative cell
-5under Pa, V/III value 30～40, the speed of growth 0.6～0.8ML/s condition, the non-Doped GaN layer of growth on the GaN resilient coating obtained in step (3).
(5) epitaxial growth of InGaN/GaN Multiple Quantum Well: adopt molecular beam epitaxial growth technique, growth temperature is 750～850 ° of C, at the pressure of reative cell, is 4.0～5.0 * 10
-5pa, V/III value are 30～40, the speed of growth is under 0.4～0.6ML/s condition, growing InGaN/GaN Multiple Quantum Well on the non-Doped GaN layer obtained in step (4).
The thickness of described GaN resilient coating is 50～80nm, and the GaN resilient coating that 50～80nm is thick can provide the center of forming core, for grow high quality GaN film by MOCVD next lays the foundation.
Thickness 200～the 300nm of described non-Doped GaN layer, when GaN thickness reaches 200-300nm, the stress of epitaxial loayer is discharged fully, for epitaxial growth high-quality N-shaped Doped GaN film next lays the foundation.
The InGaN trap layer that described InGaN/GaN quantum well is 7～10 cycles/GaN builds layer, and wherein the thickness of InGaN trap layer is 2～3nm; The thickness that GaN builds layer is 10～13nm.
Described substrate surface polishing is specially:
At first by La
0.3sr
1.7alTaO
6substrate surface carries out polishing with diamond mud, coordinates the observation by light microscope substrate surface, until after there is no cut, then adopt the method for chemico-mechanical polishing to carry out polishing.
Described cleaning is specially:
By La
0.3sr
1.7alTaO
6substrate is put under the deionized water room temperature ultrasonic cleaning 3～5 minutes, removes La
0.3sr
1.7alTaO
6substrate surface pickup particle, then, successively through persalt, acetone, ethanol washing, remove surface organic matter, with high-purity drying nitrogen, dry up.
Compared with prior art, the utlity model has following advantage and beneficial effect:
(1) the utility model has been used La
0.3sr
1.7alTaO
6as substrate, La
0.3sr
1.7alTaO
6substrate easily obtains, and low price is conducive to reduce production costs.
(2) the utility model has been used La
0.3sr
1.7alTaO
6as substrate, can be easier to obtain island GaN for the growing GaN resilient coating, for the GaN film of the low defect of next step depositing high-quality, to lay the groundwork, the high-quality GaN film is conducive to the epitaxial growth of later stage high-quality InGaN/GaN Multiple Quantum Well; High-quality InGaN/GaN film, because half-peak breadth numerical value is little, dislocation density is low, is conducive to improve the radiation recombination efficiency of charge carrier, can increase substantially the luminous efficiency of nitride device as semiconductor laser, light-emitting diode and solar cell.
(3) growth technique of the present utility model is unique and simple, has repeatability.
The accompanying drawing explanation
Fig. 1 is the schematic cross-section of the prepared high-quality InGaN/GaN Multiple Quantum Well of the utility model.
Fig. 2 is the XRD resolution chart of the prepared InGaN/GaN Multiple Quantum Well of the utility model.
Fig. 3 is the PL spectrum resolution chart that is grown in the InGaN/GaN Multiple Quantum Well on strontium aluminate tantalum lanthanum substrate prepared by the utility model.
Embodiment
Below in conjunction with embodiment, the utility model is described in further detail, but execution mode of the present utility model is not limited to this.
Embodiment 1
Be grown in the preparation method of the InGaN/GaN Multiple Quantum Well on strontium aluminate tantalum lanthanum substrate, comprise the following steps:
(1) substrate with and the choosing of crystal orientation: adopt La
0.3sr
1.7alTaO
6substrate, take (111) face partially 0.5 °, (100) direction be epitaxial surface, crystal epitaxial orientation pass is: (0001) face of GaN is parallel to La
0.3sr
1.7alTaO
6(111) face, GaN (0001) //La
0.3sr
1.7alTaO
6(111);
(2) substrate surface polishing, cleaning and annealing in process:
Described substrate surface polishing is specially: at first by La
0.3sr
1.7alTaO
6substrate surface carries out polishing with diamond mud, coordinates the observation by light microscope substrate surface, until after there is no cut, then adopt the method for chemico-mechanical polishing to carry out polishing;
Described cleaning is specially: by La
0.3sr
1.7alTaO
6substrate is put under the deionized water room temperature ultrasonic cleaning 3 minutes, removes La
0.3sr
1.7alTaO
6substrate surface pickup particle, then, successively through persalt, acetone, ethanol washing, remove surface organic matter, with high-purity drying nitrogen, dry up;
The detailed process of described annealing is: substrate is put into to annealing chamber, under 800 ° of C in air atmosphere to La
0.3sr
1.7alTaO
6substrate carry out annealing in process 3 hours then air cooling to room temperature;
(3) GaN resilient coating epitaxial growth: underlayer temperature is adjusted to 450～550 ° of C, at the pressure of reative cell, is 6.0 * 10
-5the GaN resilient coating of growth 50nm under the condition that Pa, V/III value are 50, the speed of growth is 0.4ML/s;
(4) epitaxial growth of non-Doped GaN layer: adopting molecular beam epitaxial growth technique, substrate is remained on to 500 ° of C, is 4.0 * 10 at the pressure of reative cell
-5pa, V/III value are 30, the speed of growth is under the 0.6ML/s condition, the non-Doped GaN layer of growth 200nm on the GaN resilient coating obtained in step (3);
(5) epitaxial growth of InGaN/GaN Multiple Quantum Well: adopt molecular beam epitaxial growth technique, growth temperature is 750 ° of C, the pressure 4.0 * 10 of reative cell
-5under Pa, V/III value 30, speed of growth 0.4ML/s condition, the non-Doped GaN layer growth InGaN/GaN Multiple Quantum Well obtained in step (4), the InGaN trap layer that described InGaN/GaN quantum well is 7 cycles/GaN builds layer, and wherein the thickness of InGaN trap layer is 2nm; The thickness that GaN builds layer is 10nm.
Fig. 1 is the prepared schematic cross-section that is grown in the InGaN/GaN Multiple Quantum Well on strontium aluminate tantalum lanthanum substrate of the utility model, comprises as shown in the figure and is grown in La
0.3sr
1.7alTaO
6gaN resilient coating 12 on substrate 11, be grown in the non-Doped GaN layer 13 on GaN resilient coating 12, is grown in the InGaN/GaN quantum well 14 on non-Doped GaN layer 13.
Fig. 2 is the XRD resolution chart of the InGaN/GaN Multiple Quantum Well for preparing of the present embodiment; The XRD resolution chart that is grown in the InGaN/GaN Multiple Quantum Well on strontium aluminate tantalum lanthanum substrate (111) face prepared by the utility model.Test obtains InGaN/GaN quantum well satellites, and its highest peak is GaN, and its half-peak breadth (FWHM) is worth lower than 0.1 °, and the side, left and right is followed successively by first order satellites, second level satellites ..., the quantum well trap layer 3nm finally calculated, build layer 13nm.Show no matter nonpolar InGaN/GaN Multiple Quantum Well prepared by the utility model is in defect concentration or at crystalline quality, all has extraordinary performance.
Fig. 3 is the PL spectrum resolution chart that is grown in the InGaN/GaN Multiple Quantum Well on strontium aluminate tantalum lanthanum substrate prepared by the utility model.As seen from the figure, temperature be under 293K PL spectrum test to obtain the glow peak wavelength be 441nm, half-peak breadth is 24.3nm.Show that InGaN/GaN film prepared by the utility model has extraordinary optical property.
Embodiment 2
Be grown in the preparation method of the InGaN/GaN Multiple Quantum Well on strontium aluminate tantalum lanthanum substrate, comprise the following steps:
(1) substrate with and the choosing of crystal orientation: adopt La
0.3sr
1.7alTaO
6substrate, take (111) face partially 1 °, (100) direction be epitaxial surface, crystal epitaxial orientation pass is: (0001) face of GaN is parallel to La
0.3sr
1.7alTaO
6(111) face, GaN (0001) //La
0.3sr
1.7alTaO
6(111);
(2) substrate surface polishing, cleaning and annealing in process:
Described substrate surface polishing is specially: at first by La
0.3sr
1.7alTaO
6substrate surface carries out polishing with diamond mud, coordinates the observation by light microscope substrate surface, until after there is no cut, then adopt the method for chemico-mechanical polishing to carry out polishing;
Described cleaning is specially: by La
0.3sr
1.7alTaO
6substrate is put under the deionized water room temperature ultrasonic cleaning 5 minutes, removes La
0.3sr
1.7alTaO
6substrate surface pickup particle, then, successively through persalt, acetone, ethanol washing, remove surface organic matter, with high-purity drying nitrogen, dry up;
The detailed process of described annealing is: substrate is put into to annealing chamber, under 900 ° of C in air atmosphere to La
0.3sr
1.7alTaO
6substrate carry out annealing in process 5 hours then air cooling to room temperature;
(3) GaN resilient coating epitaxial growth: underlayer temperature is adjusted to 550 ° of C, at the pressure of reative cell, is 7.2 * 10
-5the GaN resilient coating of growth 80nm under the condition that Pa, V/III value are 60, the speed of growth is 0.6ML/s;
(4) epitaxial growth of non-Doped GaN layer: adopting molecular beam epitaxial growth technique, substrate is remained on to 600 ° of C, is 5.0 * 10 at the pressure of reative cell
-5pa, V/III value are 40, the speed of growth is under the 0.8ML/s condition, the non-Doped GaN layer of the 200～300nm that grows on the GaN resilient coating obtained in step (3);
(5) epitaxial growth of InGaN/GaN Multiple Quantum Well: adopt molecular beam epitaxial growth technique, growth temperature is 850 ° of C, the pressure 5.0 * 10 of reative cell
-5under Pa, V/III value 40, speed of growth 0.6ML/s condition, the non-Doped GaN layer growth InGaN/GaN Multiple Quantum Well obtained in step (4), the InGaN trap layer that described InGaN/GaN quantum well is 10 cycles/GaN builds layer, and wherein the thickness of InGaN trap layer is 3nm; The thickness that GaN builds layer is 13nm.
InGaN/GaN Multiple Quantum Well on strontium aluminate tantalum lanthanum substrate prepared by the present embodiment has extraordinary optical property, and test data is close with embodiment 1, does not repeat them here.
Above-described embodiment is preferably execution mode of the utility model; but execution mode of the present utility model is not limited by the examples; other any do not deviate from change, the modification done under Spirit Essence of the present utility model and principle, substitutes, combination, simplify; all should be equivalent substitute mode, within being included in protection range of the present utility model.
Claims (3)
1. be grown in the InGaN/GaN Multiple Quantum Well on strontium aluminate tantalum lanthanum substrate, it is characterized in that, comprise and be grown in La
0.3sr
1.7alTaO
6gaN resilient coating on substrate, be grown in the non-Doped GaN layer on the GaN resilient coating, is grown in the InGaN/GaN quantum well on non-Doped GaN layer.
2. the InGaN/GaN Multiple Quantum Well be grown on strontium aluminate tantalum lanthanum substrate according to claim 1, is characterized in that described La
0.3sr
1.7alTaO
6substrate take (111) face partially 0.5～1 °, (100) direction be epitaxial surface.
3. the InGaN/GaN Multiple Quantum Well be grown on strontium aluminate tantalum lanthanum substrate according to claim 1, is characterized in that, the thickness of described GaN resilient coating is 50～80nm; Thickness 200～the 300nm of non-Doped GaN layer; The InGaN trap layer that described InGaN/GaN quantum well is 7～10 cycles/GaN builds layer, and wherein the thickness of InGaN trap layer is 2～3nm; The thickness that GaN builds layer is 10～13nm.
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|---|---|---|---|
| CN2013203126623U CN203339206U (en) | 2013-05-31 | 2013-05-31 | InGaN/GaN multi-quantum well growing on La(0.3)Sr(1.7)AlTaO6 substrate |
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|---|---|---|---|
| CN2013203126623U CN203339206U (en) | 2013-05-31 | 2013-05-31 | InGaN/GaN multi-quantum well growing on La(0.3)Sr(1.7)AlTaO6 substrate |
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| CN2013203126623U Expired - Fee Related CN203339206U (en) | 2013-05-31 | 2013-05-31 | InGaN/GaN multi-quantum well growing on La(0.3)Sr(1.7)AlTaO6 substrate |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103296159A (en) * | 2013-05-31 | 2013-09-11 | 华南理工大学 | InGaN/GaN multiple quantum well growing on La0.3Sr1.7AlTaO6 substrate and manufacturing method of InGaN/GaN multiple quantum well |
-
2013
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103296159A (en) * | 2013-05-31 | 2013-09-11 | 华南理工大学 | InGaN/GaN multiple quantum well growing on La0.3Sr1.7AlTaO6 substrate and manufacturing method of InGaN/GaN multiple quantum well |
| CN103296159B (en) * | 2013-05-31 | 2015-09-16 | 华南理工大学 | Grow the InGaN/GaN Multiple Quantum Well on strontium aluminate tantalum lanthanum substrate and preparation method |
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Granted publication date: 20131211 Termination date: 20190531 |