CN206422089U - The GaN film of growth on a glass substrate - Google Patents
The GaN film of growth on a glass substrate Download PDFInfo
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- CN206422089U CN206422089U CN201621450923.8U CN201621450923U CN206422089U CN 206422089 U CN206422089 U CN 206422089U CN 201621450923 U CN201621450923 U CN 201621450923U CN 206422089 U CN206422089 U CN 206422089U
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Abstract
The utility model discloses the GaN film of growth on a glass substrate, including aluminum metal layer growth on a glass substrate, it is grown in the silver metal layer on aluminum metal layer, it is grown in the AlN cushions on silver metal layer, the GaN cushions on AlN cushions are grown in, the GaN film on GaN cushions is grown in.GaN film defect concentration of the present utility model is low, crystalline quality is good, and electrical and optical property is good.
Description
Technical field
The utility model is related to GaN film, more particularly to grows GaN film on a glass substrate.
Background technology
Light emitting diode (LED) is as a kind of novel solid lighting source and green light source, with small volume, power consumption
Low, environmentally friendly, service life length, high brightness, low in calories and colorful etc. outstanding feature, in outdoor lighting, commercial lighting and dress
The fields such as decorations engineering all have a wide range of applications.Currently, under global warming the problem increasingly background of sternness, energy is saved
Source, reduction greenhouse gas emission turn into the major issue that the whole world is faced jointly.Based on low energy consumption, low stain, low emission
Low-carbon economy, by the important directions as economic development.In lighting field, the application of LED luminous products is just attract common people's
Sight, LED is as a kind of new green light source product, the necessarily trend of future development.But LED is applied at this stage
This is higher, and luminous efficiency is relatively low, and these factors can all limit LED significantly and develop to the direction of high-efficient energy-saving environment friendly.
Group III-nitride GaN is in electricity, optics and acoustically has extremely excellent property, in recent years by extensive
Concern.GaN is direct band gap material, and sonic transmissions speed is fast, and chemically and thermally stability is good, and thermal conductivity is high, thermal coefficient of expansion
It is low, puncture dielectric strength height, be the ideal material for manufacturing efficient LED component.At present, GaN base LED luminous efficiency is present
Through reaching 28% and also further increasing, the numerical value be significantly larger than usually used incandescent lamp (about 2%) at present or
The luminous efficiency of the lighting systems such as fluorescent lamp (about 10%).
LED will really realize extensive extensively using, it is necessary to which the further luminous efficiency for improving LED chip, is reduced simultaneously
The price of LED chip.Although LED luminous efficiency alreadys exceed fluorescent lamp and incandescent lamp, commercialization LED luminous efficiencies are also
Be less than sodium vapor lamp (150lm/W), unit lumens/watt it is on the high side.Current most of GaN base LED be all based on sapphire and
Epitaxial growth is carried out in SiC substrate, large-sized sapphire and SiC substrate are expensive, cause LED manufacturing costs high.Therefore
A kind of cheap backing material is urgently found applied to epitaxial growth GaN film.
Utility model content
In order to overcome the disadvantages mentioned above and deficiency of prior art, the purpose of this utility model is that providing one kind is grown in glass
GaN film on glass substrate, defect concentration is low, crystalline quality is good, and electrical and optical property is good.
The purpose of this utility model is achieved through the following technical solutions：
The GaN film of growth on a glass substrate, including aluminum metal layer on a glass substrate is grown, it is grown in aluminum metal
Silver metal layer on layer, is grown in the AlN cushions on silver metal layer, is grown in the GaN cushions on AlN cushions, growth
GaN film on GaN cushions.
The thickness of the aluminum metal layer is 150~200 μm.
The silver metal layer thickness is 100~300nm.
The AlN buffer layer thicknesses are 5~50nm.
The thickness of the GaN cushions is 50~80nm.
The degree of the GaN film is 200~300nm.
The preparation method of the GaN film of described growth on a glass substrate, comprises the following steps：
(1) glass substrate surface is polished, cleaned；
(2) growth of aluminum metal layer：In molecular beam epitaxy system, under the conditions of underlayer temperature is 400~600 DEG C, sink
Product thickness is 150~200 μm of aluminum metal layer；
(3) growth of silver metal layer：In molecular beam epitaxy system, using the electron beam evaporation in molecular beam epitaxy system
Function, under the conditions of underlayer temperature is 400~600 DEG C, the deposit silver metal layer on obtained aluminum metal layer；
(4) growth of AlN cushions：Underlayer temperature is 450~550 DEG C, is 4.0~7.2 × 10 in the pressure of reative cell- 5Pa, the speed of growth be 0.2~0.8ML/s under conditions of, the deposited metal aluminium film on silver metal layer, then using nitrogen etc. from
Body component is nitrogenized to the metal aluminium film, and the power in plasmon source is 300~450W, and nitrogen flow is 1~5sccm,
Nitridation time is 10~50 minutes, obtains AlN films；
(5) GaN buffers layer epitaxially grown：Underlayer temperature is 450~550 DEG C, reative cell pressure for 6.0~7.2 ×
10-5Pa, line are under conditions of 50~60, speed of growth is 0.4~0.6ML/s, to be grown on AlN cushions than V/III values
GaN cushions；
(6) epitaxial growth of GaN film：Using molecular beam epitaxial growth technique, underlayer temperature is 500~600 DEG C, anti-
The pressure for answering room is 4.0~5.0 × 10-5Pa, line are that 30~40, speed of growth is 0.6~0.8ML/s conditions than V/III values
Under, grow GaN film on GaN cushions.
Step (1) polishing, be specially：
Glass substrate surface is polished with diamond mud first, coordinates observation by light microscope substrate surface, directly
It is processed by shot blasting to after no cut, then using the method for chemically mechanical polishing.
Step (1) cleaning, be specially：
Glass substrate is put into deionized water and is cleaned by ultrasonic at room temperature 3~5 minutes, glass substrate surface pickup is removed
Grain, then acetone, ethanol washing are sequentially passed through, surface organic matter is removed, is dried up with drying nitrogen.
Compared with prior art, the utility model has advantages below and beneficial effect：
(1) the utility model can effectively reduce the formation of dislocation, prepare high-quality GaN film, favorably improve load
The radiation recombination efficiency of son is flowed, nitride device such as semiconductor laser, light emitting diode and solar-electricity can be increased substantially
The performance in pond.
(2) GaN film of growth of the present utility model on a glass substrate, after glass substrate removal is carried out, aluminium gold
Category layer, which has, is used as supporting layer, conduction, the function of heat conduction；Silver metal layer has the function that light is launched.It is being previously deposited aluminium gold
The growth of GaN film is carried out on category, silver metal layer, to prepare low cost, high heat conduction, highly conductive, high luminescence energy photoelectric device
Lay a good foundation.
(3) the utility model uses glass as substrate, and glass substrate is readily available, cheap, advantageously reduces life
Produce cost.
(4) silver metal layer of the present utility model can be as speculum, can be significantly if preparing luminescent device using the GaN
Degree improves luminous efficiency；If preparing solar cell using the GaN, absorptivity can be improved, the photoelectricity for improving solar cell turns
Change efficiency.
Brief description of the drawings
Fig. 1 is GaN prepared by embodiment 1 schematic cross-section.
Fig. 2 is the XRD spectrum of GaN film (0002) prepared by embodiment 1.
Fig. 3 is the XRD spectrum of GaN film (10-12) prepared by embodiment 1.
Embodiment
With reference to embodiment, the utility model is described in further detail, but embodiment of the present utility model
Not limited to this.
Embodiment 1
As shown in figure 1, the GaN film of the growth of the present embodiment on a glass substrate, including be grown in glass substrate 10
Aluminum metal layer 11, be grown in the silver metal layer 12 on aluminum metal layer, be grown in the AlN cushions 13 on silver metal layer 12, it is raw
The long GaN cushions 14 on AlN cushions 13, are grown in the GaN film 15 on GaN cushions 14.
The preparation method of the GaN film of the growth of the present embodiment on a glass substrate, comprises the following steps：
(1) selection of substrate：Using common glass substrate；
(2) substrate surface polishing, cleaning treatment；
The substrate surface polishing, be specially：
Glass substrate surface is polished with diamond mud first, coordinates observation by light microscope substrate surface, directly
It is processed by shot blasting to after no cut, then using the method for chemically mechanical polishing；
The cleaning, be specially：
Glass substrate is put into deionized water and is cleaned by ultrasonic at room temperature 3 minutes, glass substrate surface pickup particle is removed,
Acetone, ethanol washing are sequentially passed through again, are removed surface organic matter, are dried up with high-purity drying nitrogen；
(3) growth of aluminum metal layer：In molecular beam epitaxy system, under the conditions of underlayer temperature is 400 DEG C, deposit thickness
For 150 μm of aluminium lamination；
(4) growth of silver metal layer：In molecular beam epitaxy system, using the electron beam evaporation in molecular beam epitaxy system
Function, under the conditions of underlayer temperature is 400 DEG C, deposit thickness is the silver metal layer of 100nm thickness on aluminum metal layer；
(5) growth of AlN cushions：Underlayer temperature is 500 DEG C, is 4.0 × 10 in the pressure of reative cell-5Pa, growth speed
Spend under conditions of 0.2ML/s, deposit thickness is 10nm metal aluminium film on silver metal layer, then using nitrogen plasmon
Source is nitrogenized to the metal aluminium film, and the power in nitrogen plasmon source is 300W, and nitrogen flow is 1.5sccm, nitridation time
For 10 minutes, AlN films are obtained；
(6) GaN buffers layer epitaxially grown：Underlayer temperature is 500 DEG C, is 6.0 × 10 in the pressure of reative cell-5Pa, line
It is that under conditions of the 50, speed of growth is 0.4ML/s, growth thickness buffers for 50nm GaN on AlN cushions than V/III values
Layer；
(7) epitaxial growth of GaN film：Using molecular beam epitaxial growth technique, underlayer temperature is 500 DEG C, in reative cell
Pressure be 4.0 × 10-5Pa, line are 30, under the conditions of speed of growth 0.6ML/s than V/III values, in obtained GaN cushions
Upper growth thickness is 200nm GaN film.
Fig. 2,3 be GaN film manufactured in the present embodiment XRD spectrum, from X-ray swing curve it can be seen that, GaN
(0002) half-peak breadth (FWHM) value of X-ray swing curve is less than 231.1arcsec, and GaN (10-12) half-value width is
253.2arcsec；Show that epitaxial growth on a glass substrate has gone out high-quality GaN film.
The GaN film of growth manufactured in the present embodiment on a glass substrate is used to prepare LED：Manufactured in the present embodiment
The n-type of epitaxial growth Si doping mixes silicon GaN, In successively in the GaN film of growth on a glass substratexGa1-xN/GaN Multiple-quantums
Well layer, the p-type of Mg doping mix the GaN layer of magnesium, last electron beam evaporation formation Ohmic contact.Prepare on a glass substrate
GaN base LED component, its n-type GaN thickness is about 5 μm, and the concentration of its carrier is 1 × 1019cm-3；InxGa1-xN/GaN volumes
The thickness of sub- well layer is about 160nm, and periodicity is 10, wherein InxGa1-xN well layer is 3nm, and GaN barrier layer is 13nm, and p-type mixes magnesium
GaN layer thickness be about 300nm, the concentration of its carrier is 3 × 1017cm-3.Under 20mA operating current, LED component
Optical output power is 4.3mW, and cut-in voltage value is 3.18V.
The GaN film of growth manufactured in the present embodiment on a glass substrate is used to prepare photodetector：In this implementation
Epitaxial growth n-type mixes silicon GaN, undoped GaN, p-type and mixes magnesium successively in the GaN film of growth prepared by example on a glass substrate
GaN, last electron beam evaporation formation Ohmic contact and schottky junction.It is about 3 μm that wherein n-type, which mixes silicon GaN thickness, its carrier
Concentration is 1 × 1019cm-3；Undoped GaN thickness is about 200nm, and its carrier concentration is 2.2 × 1016cm-3；P-type mixes magnesium
GaN thickness is about 1.5 μm.Photodetector prepared by the present embodiment is under 1V biass, and dark current is only 65pA, and device
Under 1V biass, the maximum of responsiveness has reached 0.92A/W at 361nm.
The GaN film of growth manufactured in the present embodiment on a glass substrate is used to prepare InGaN solar cells：At this
Growth has the In of component gradient successively in the GaN film of growth prepared by embodiment on a glass substratexGa1-xN cushions, n
Type mixes silicon InxGa1-xN, InxGa1-xN multiple quantum well layers, p-type mixes the In of magnesiumxGa1-xN layers, last electron beam evaporation forms ohm and connect
Touch, wherein 0<x≤0.2.Wherein, n-type mixes silicon InxGa1-xN thickness is about 5 μm, and the concentration of its carrier is 1 × 1019cm-3；
InxGa1-xN multiple quantum well layers, thickness is about 300nm, and periodicity is 20, wherein In0.2Ga0.8N well layer is 3nm, In0.08Ga0.92N
Barrier layer is 10nm.The electricity conversion of the solar cell that this technique is prepared at room temperature is 9.1%, and short-circuit photocurrent is close
Spend for 35mA/cm2。
Embodiment 2
The preparation method of the GaN film of the growth of the present embodiment on a glass substrate, comprises the following steps：
(1) selection of substrate：Using common glass substrate；
(2) substrate surface polishing, cleaning treatment；
The substrate surface polishing, be specially：
Glass substrate surface is polished with diamond mud first, coordinates observation by light microscope substrate surface, directly
It is processed by shot blasting to after no cut, then using the method for chemically mechanical polishing；
The cleaning, be specially：
Glass substrate is put into deionized water and is cleaned by ultrasonic at room temperature 5 minutes, glass substrate surface pickup particle is removed,
Acetone, ethanol washing are sequentially passed through again, are removed surface organic matter, are dried up with high-purity drying nitrogen；
(3) growth of aluminum metal layer：In molecular beam epitaxy system, under the conditions of underlayer temperature is 600 DEG C, deposit thickness
For 200 μm of aluminum metal layer；
(4) growth of silver metal layer：In molecular beam epitaxy system, using the electron beam evaporation in molecular beam epitaxy system
Function, under the conditions of underlayer temperature is 600 DEG C, deposit thickness is the silver metal layer of 300nm thickness on aluminum metal layer；
(5) growth of AlN cushions：Underlayer temperature is 550 DEG C, is 7.2 × 10 in the pressure of reative cell-5Pa, growth speed
Spend under conditions of 0.2ML/s, deposit thickness is 20nm metal aluminium film on silver metal layer, then using nitrogen plasmon
Source is nitrogenized to the metal aluminium film, and nitrogen plasmon power is 300W, and nitrogen flow is 1.5sccm, and nitridation time is 20
Minute, obtain AlN films；
(6) GaN buffers layer epitaxially grown：Underlayer temperature is 550 DEG C, is 5.0 × 10 in the pressure of reative cell-5Pa, line
It is under conditions of the 50, speed of growth is 0.4ML/s, in the GaN cushions that AlN buffer growths thickness is 50nm than V/III values；
(7) epitaxial growth of GaN film：Using molecular beam epitaxial growth technique, underlayer temperature is 600 DEG C, in reative cell
Pressure be 4.0 × 10-5Pa, line are 30, under the conditions of speed of growth 0.6ML/s than V/III values, are grown on GaN cushions
Thickness is 200nm GaN film.
The GaN film test result of growth manufactured in the present embodiment on a glass substrate is similar to embodiment, herein no longer
Repeat.
Above-described embodiment is the utility model preferably embodiment, but embodiment of the present utility model is not by described
The limitation of embodiment, it is other it is any without departing from Spirit Essence of the present utility model with made under principle change, modify, replace
Generation, combination, simplification, should be equivalent substitute mode, are included within protection domain of the present utility model.
Claims (6)
1. the GaN film of growth on a glass substrate, it is characterised in that including aluminum metal layer growth on a glass substrate, raw
The long silver metal layer on aluminum metal layer, is grown in the AlN cushions on silver metal layer, and the GaN being grown on AlN cushions delays
Layer is rushed, the GaN film on GaN cushions is grown in.
2. the GaN film of growth according to claim 1 on a glass substrate, it is characterised in that the aluminum metal layer
Thickness is 150~200 μm.
3. the GaN film of growth according to claim 1 on a glass substrate, it is characterised in that the silver metal thickness
Spend for 100~300nm.
4. the GaN film of growth according to claim 1 on a glass substrate, it is characterised in that the AlN buffers thickness
Spend for 5~50nm.
5. the GaN film of growth according to claim 1 on a glass substrate, it is characterised in that the GaN cushions
Thickness is 50~80nm.
6. the GaN film of growth according to claim 1 on a glass substrate, it is characterised in that the degree of the GaN film
For 200~300nm.
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| CN201621450923.8U CN206422089U (en) | 2016-12-27 | 2016-12-27 | The GaN film of growth on a glass substrate |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106601887A (en) * | 2016-12-27 | 2017-04-26 | 华南理工大学 | GaN film growing on glass substrate and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106601887A (en) * | 2016-12-27 | 2017-04-26 | 华南理工大学 | GaN film growing on glass substrate and preparation method thereof |
| CN106601887B (en) * | 2016-12-27 | 2018-12-11 | 华南理工大学 | The GaN film and preparation method thereof of growth on a glass substrate |
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