CN106505135B - The InGaN/GaN multiple quantum wells and preparation method thereof of growth on a glass substrate - Google Patents
The InGaN/GaN multiple quantum wells and preparation method thereof of growth on a glass substrate Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 239000000872 buffer Substances 0.000 claims abstract description 36
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 27
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 30
- 229910052757 nitrogen Inorganic materials 0.000 claims description 15
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- 238000001451 molecular beam epitaxy Methods 0.000 claims description 12
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- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
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- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 4
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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Abstract
The invention discloses the InGaN/GaN multiple quantum wells of growth on a glass substrate, including growing aluminum metal layer on a glass substrate, the silver metal layer being grown on aluminum metal layer, the AlN buffer layer being grown on silver metal layer, the GaN buffer layer being grown on AlN buffer layer, the undoped GaN layer being grown on GaN buffer layer, the InGaN/GaN Quantum Well being grown in undoped GaN layer.The invention also discloses the preparation methods of the InGaN/GaN multiple quantum wells of above-mentioned growth on a glass substrate.The present invention has growth technique simple, the cheap advantage of preparation cost, and the InGaN/GaN multiple quantum wells defect concentration prepared is low, crystalline quality is good, and electrical and optical property is good.
Description
Technical field
The present invention relates to InGaN/GaN multiple quantum wells and preparation methods, in particular to grow on a glass substrate
InGaN/GaN multiple quantum wells and preparation method.
Background technique
Light emitting diode (LED) is used as a kind of novel solid lighting source and green light source, has small in size, power consumption
Low, environmentally friendly, long service life, high brightness, the low in calories and outstanding features such as colorful, in outdoor lighting, commercial lighting and dress
The fields such as decorations engineering all have a wide range of applications.Currently, under the increasingly severe background of global warming problem, energy is saved
The major issue that greenhouse gas emission faces jointly as the whole world is reduced in source.Based on low energy consumption, low pollution, low emission
Low-carbon economy will become the important directions of economic development.Just attract common people's in the application of lighting area, LED luminous product
Sight, LED is as a kind of novel green light source product, the necessarily trend of future development.But LED is applied at this stage
This is higher, and luminous efficiency is lower, these factors can all limit LED significantly and develop to the direction of high-efficient energy-saving environment friendly.
Group III-nitride GaN is in electricity, optics and acoustically with extremely excellent property, in recent years by extensive
Concern.GaN is direct band gap material, and sonic transmissions speed is fast, and chemical and thermal stability is good, and thermal conductivity is high, thermal expansion coefficient
Low, it is the ideal material for manufacturing efficient LED component that breakdown dielectric strength is high.Currently, the luminous efficiency of GaN base LED is now
Reached 28% and also further increased, the numerical value be significantly larger than usually used incandescent lamp (about 2%) at present or
The luminous efficiency of the lighting methods such as fluorescent lamp (about 10%).
LED will really realize extensive extensive use, need to further increase the luminous efficiency of LED chip, reduce simultaneously
The price of LED chip.Although the luminous efficiency of LED alreadys exceed fluorescent lamp and incandescent lamp, commercialization LED luminous efficiency is also
Be less than sodium vapor lamp (150lm/W), unit lumens/watt it is on the high side.Current most of GaN base LED be all based on sapphire and
Epitaxial growth is carried out in SiC substrate, large-sized sapphire and SiC substrate are expensive, cause LED manufacturing cost high.Therefore
It urgently finds the cheap substrate material of one kind and is applied to epitaxial growth GaN film and InGaN/GaN multiple quantum wells.
It is well known that the InGaN/GaN multiple quantum wells of preparation high quality is the base of high-effect high-quality GaN base LED epitaxial wafer
Therefore plinth prepares high quality InGaN/GaN multiple quantum wells in cheap glass substrate and has been a hot spot of research and difficult
Point.
Summary of the invention
In order to overcome the disadvantages mentioned above and deficiency of the prior art, the purpose of the present invention is to provide one kind to be grown in glass lined
InGaN/GaN multiple quantum wells on bottom has the advantages of defect concentration is low, crystalline quality is good, good luminescence property.
Another object of the present invention is to provide the preparations of the InGaN/GaN multiple quantum wells of above-mentioned growth on a glass substrate
Method.
The purpose of the present invention is achieved through the following technical solutions:
The InGaN/GaN multiple quantum wells of growth on a glass substrate, it is raw including growing aluminum metal layer on a glass substrate
The silver metal layer on aluminum metal layer is grown, the AlN buffer layer being grown on silver metal layer, the GaN being grown on AlN buffer layer delays
Layer is rushed, the undoped GaN layer being grown on GaN buffer layer, the InGaN/GaN Quantum Well being grown in undoped GaN layer.
The aluminum metal layer is with a thickness of 150~200 μm.
The silver metal layer with a thickness of 100~300nm.
The AlN buffer layer with a thickness of 5~50nm.
The GaN buffer layer with a thickness of 50~80nm.
The undoped GaN layer with a thickness of 200~300nm.
The InGaN/GaN Quantum Well is the InGaN well layer/GaN barrier layer in 7~10 periods, wherein the thickness of InGaN well layer
Degree is 2~3nm；GaN barrier layer with a thickness of 10~13nm.
The preparation method of the InGaN/GaN multiple quantum wells of the growth on a glass substrate, comprising the following steps:
(1) glass substrate surface polishing, cleaning treatment；
(2) growth of aluminum metal layer: being 400~600 DEG C of conditions in glass substrate temperature in molecular beam epitaxy system
Under, aluminum metal layer；
(3) growth of silver metal layer: in molecular beam epitaxy system, using the electron beam evaporation in molecular beam epitaxy system
Function, under the conditions of underlayer temperature is 400~600 DEG C, deposit silver metal layer；
(4) growth of AlN buffer layer: underlayer temperature is 450~550 DEG C, is 4.0~7.2 × 10 in the pressure of reaction chamber- 5Pa, the speed of growth are deposited metal aluminium film under conditions of 0.2~0.8ML/s, then using nitrogen plasmon source to the metal
Aluminium film is nitrogenized, and the power in plasmon source is 300~450W, and nitrogen flow is 1~5sccm, and nitridation time is 10~
50 minutes, AlN film is obtained, the growth for carrying out subsequent GaN buffer layer is conducive to；
(5) GaN buffer layer epitaxially grown: underlayer temperature be 450~550 DEG C, reaction chamber pressure be 6.0~7.2 ×
10-5GaN buffer layer is grown under conditions of Pa, line ratio V/III value are 50~60, the speed of growth is 0.4~0.6ML/s；450
~550 DEG C of grown buffer layers can effectively make GaN in the surface AlN forming core, while provide enough growths for epitaxial growth
Energy；
(6) epitaxial growth of undoped GaN layer: using molecular beam epitaxial growth technique, and underlayer temperature is 500~600 DEG C,
It is 4.0~5.0 × 10 in the pressure of reaction chamber-5Pa, line ratio V/III value are 30~40, the speed of growth is 0.6~0.8ML/s
Under the conditions of, undoped GaN layer is grown on GaN buffer layer；
(7) epitaxial growth of InGaN/GaN multiple quantum wells: use molecular beam epitaxial growth technique, underlayer temperature be 750~
850 DEG C, be 4.0~5.0 × 10 in the pressure of reaction chamber-5Pa, line ratio V/III value are 30~40, the speed of growth be 0.4~
Under the conditions of 0.6ML/s, InGaN/GaN multiple quantum wells is grown in undoped GaN layer.
Step (1) described polishing, specifically:
Glass substrate surface is polished with diamond mud first, cooperates optical microphotograph sem observation substrate surface, directly
It is processed by shot blasting to after no scratch, then using the method for chemically mechanical polishing.
Step (1) described cleaning, specifically:
Glass substrate is put into deionized water and is cleaned by ultrasonic at room temperature 3~5 minutes, glass substrate surface pickup is removed
Grain, then successively pass through acetone, ethanol washing, surface organic matter is removed, is dried up with drying nitrogen.
Compared with prior art, the present invention has the following advantages and beneficial effects:
(1) the InGaN/GaN multiple quantum wells of growth of the invention on a glass substrate, can effectively reduce the shape of dislocation
At, high quality InGaN/GaN multi-quantum-well film is prepared, the radiation recombination efficiency of carrier is favorably improved, it can be significantly
Improve the luminous efficiency of nitride device such as semiconductor laser, light emitting diode and solar battery.
(2) the InGaN/GaN multiple quantum wells of growth of the invention on a glass substrate removes it carrying out glass substrate
Afterwards, aluminum metal layer has as supporting layer, conduction, thermally conductive function；Silver metal layer has the function of light transmitting.It sinks in advance
The growth of InGaN/GaN multi-quantum-well film is carried out in product aluminum metal, silver metal layer, is led for preparation low cost, high thermal conductivity, height
Electricity, high luminescence energy photoelectric device are laid a good foundation.
(3) present invention uses glass as substrate, and glass substrate is easy to get, cheap, advantageously reduces and is produced into
This.
(4) silver metal of the invention can be used as reflecting mirror, if preparing photophore using the InGaN/GaN multiple quantum wells
Part can increase substantially luminous efficiency；If preparing solar cell using the InGaN/GaN multi-quantum-well film, light can be improved
Absorptivity improves the photoelectric conversion efficiency of solar cell.
(5) present invention uses glass substrate, has the advantages that easily remove, then the InGaN/ after removing glass substrate
Electrode is made on GaN multi-quantum-well film, so as to be conducive to prepare the InGaN/GaN multi-quantum pit structure light of vertical structure
Electrical part.
(6) then the present invention carries out nitrogen treatment using one layer of metal aluminium film is deposited on silver metal layer, forms AlN
Layer, is conducive to the growth of subsequent GaN, InGaN/GaN Multiple-quantum can not directly be grown in amorphous glass substrate by overcoming
The technical problem of trap；Using low temperature (450~550 DEG C) epitaxy technology, first one layer of GaN of epitaxial growth is buffered on AlN buffer layer
Layer can obtain island GaN by growing GaN buffer layer, do for the undoped GaN film of next step depositing high-quality low defect
Place mat；The undoped GaN film of high quality is conducive to the epitaxial growth of later period high quality InGaN/GaN multiple quantum wells；High quality
InGaN/GaN multi-quantum-well film, since half-peak breadth numerical value is small, dislocation density is low, is conducive to the radiation recombination for improving carrier
Efficiency can increase substantially the luminous efficiency of nitride device, be expected to prepare the device of efficient LED.
(7) growth technique of the invention is unique and simple and easy, has repeatability.
(8) present invention can go out glass substrate resistant to high temperature by mixing different compositional modulations.
Detailed description of the invention
Fig. 1 is the schematic cross-section of InGaN/GaN multiple quantum wells prepared by embodiment 1.
Fig. 2 is the PL spectrum test chart of InGaN/GaN multiple quantum wells prepared by embodiment 1.
Specific embodiment
Below with reference to embodiment, the present invention is described in further detail, embodiments of the present invention are not limited thereto.
Embodiment 1
It is the section signal of the InGaN/GaN multiple quantum wells of growth manufactured in the present embodiment on a glass substrate shown in Fig. 1
Figure, as shown in the figure including the aluminum metal layer 11 being grown in glass substrate 10, the silver metal layer 12 being grown on aluminum metal layer 11,
It is slow to be grown in GaN for the AlN buffer layer 13 being grown on silver metal layer 12, the GaN buffer layer 14 being grown on AlN buffer layer 13
The undoped GaN layer 15 on layer 14 is rushed, the InGaN/GaN multiple quantum wells 16 being grown in undoped GaN layer 15.
The preparation method of the InGaN/GaN multiple quantum wells of the growth of the present embodiment on a glass substrate, comprising the following steps:
(1) selection of substrate: common glass substrate is used；
(2) substrate surface polishing, cleaning treatment；
The substrate surface polishing, specifically:
Glass substrate surface is polished with diamond mud first, cooperates optical microphotograph sem observation substrate surface, directly
It is processed by shot blasting to after no scratch, then using the method for chemically mechanical polishing；
The cleaning, specifically:
Glass substrate is put into deionized water and is cleaned by ultrasonic at room temperature 3 minutes, glass substrate surface pickup particle is removed,
Successively pass through acetone, ethanol washing again, remove surface organic matter, is dried up with high-purity drying nitrogen；
(3) growth of aluminum metal layer: in molecular beam epitaxy system, under the conditions of underlayer temperature is 400 DEG C, deposition thickness
For 150 μm of aluminum metal layer；
(4) growth of silver metal layer: in molecular beam epitaxy system, using the electron beam evaporation in molecular beam epitaxy system
Function, under the conditions of underlayer temperature is 400 DEG C, deposition thickness is the silver metal layer of 100nm thickness；
(5) growth of AlN buffer layer: underlayer temperature is 500 DEG C, is 4.0 × 10 in the pressure of reaction chamber-5Pa, growth speed
The metal aluminium film that deposition thickness is 10nm under conditions of degree is 0.2ML/s, then using nitrogen plasmon source to the metallic aluminium
Film is nitrogenized, and the power in nitrogen plasmon source is 300W, and nitrogen flow 1.5sccm, nitridation time is 10 minutes, is obtained
AlN film；
(6) GaN buffers layer epitaxially grown: underlayer temperature is 500 DEG C, is 6.0 × 10 in the pressure of reaction chamber-5Pa, line
The GaN buffer layer that growth thickness is 50nm under conditions of than V/III value be 50, the speed of growth is 0.4ML/s；
(7) epitaxial growth of undoped GaN layer: molecular beam epitaxial growth technique is used, underlayer temperature is 500 DEG C, anti-
The pressure for answering room is 4.0 × 10-5Under the conditions of Pa, line ratio V/III value are 30, speed of growth 0.6ML/s, obtained in step (4)
GaN buffer layer on growth thickness be 200nm undoped GaN film.
(8) molecular beam epitaxial growth technique, underlayer temperature 750 epitaxial growth of InGaN/GaN multiple quantum wells: are used
DEG C, the pressure of reaction chamber is 4.0 × 10-5Under the conditions of Pa, line ratio V/III value are 30, the speed of growth is 0.6ML/s, in step
(5) the undoped GaN layer growth InGaN/GaN multiple quantum wells obtained, the InGaN/GaN Quantum Well is the InGaN in 7 periods
Well layer/GaN barrier layer, wherein InGaN well layer with a thickness of 2nm；GaN barrier layer with a thickness of 10nm.
Fig. 2 is the PL spectrum test chart of the InGaN/GaN multiple quantum wells of growth manufactured in the present embodiment on a glass substrate, by
Figure is it is found that it is 453nm, half-peak breadth 23.3nm that temperature, which is that the test of PL spectrum obtains glow peak wavelength under 293K,.Show system of the present invention
Standby InGaN/GaN multi-quantum-well film has extraordinary optical property.
Embodiment 2
The preparation method of the InGaN/GaN multiple quantum wells of the growth of the present embodiment on a glass substrate, comprising the following steps:
(1) selection of substrate: common glass substrate is used；
(2) substrate surface polishing, cleaning treatment；
The substrate surface polishing, specifically:
Glass substrate surface is polished with diamond mud first, cooperates optical microphotograph sem observation substrate surface, directly
It is processed by shot blasting to after no scratch, then using the method for chemically mechanical polishing；
The cleaning, specifically:
Glass substrate is put into deionized water and is cleaned by ultrasonic at room temperature 5 minutes, glass substrate surface pickup particle is removed,
Successively pass through acetone, ethanol washing again, remove surface organic matter, is dried up with high-purity drying nitrogen；
(3) growth of aluminum metal layer: in molecular beam epitaxy system, under the conditions of underlayer temperature is 600 DEG C, deposition thickness
For 200 μm of aluminum metal layer；
(4) growth of silver metal layer: in molecular beam epitaxy system, using the electron beam evaporation in molecular beam epitaxy system
Function, under the conditions of underlayer temperature is 600 DEG C, deposition thickness is the silver metal layer of 300nm thickness；
(5) growth of AlN buffer layer: underlayer temperature is 550 DEG C, is 7.2 × 10 in the pressure of reaction chamber-5Pa, growth speed
The metal aluminium film that deposition thickness is 20nm under conditions of degree is 0.2ML/s, then using nitrogen plasmon source to the metallic aluminium
Film is nitrogenized, and nitrogen plasmon power is 300W, and nitrogen flow 1.5sccm, nitridation time is 20 minutes, obtains AlN
Film.
(6) GaN buffers layer epitaxially grown: underlayer temperature is 550 DEG C, is 6.0 × 10 in the pressure of reaction chamber-5Pa, line
The GaN buffer layer that growth thickness is 50nm under conditions of than V/III value be 50, the speed of growth is 0.4ML/s；
(7) epitaxial growth of undoped GaN layer: molecular beam epitaxial growth technique is used, underlayer temperature is 600 DEG C, anti-
The pressure for answering room is 4.0 × 10-5Under the conditions of Pa, line ratio V/III value are 30, speed of growth 0.6ML/s, obtained in step (4)
GaN buffer layer on growth thickness be 200nm undoped GaN film.
(8) molecular beam epitaxial growth technique, underlayer temperature 850 epitaxial growth of InGaN/GaN multiple quantum wells: are used
DEG C, the pressure of reaction chamber is 4.0 × 10-5Under the conditions of Pa, line ratio V/III value are 30, the speed of growth is 0.6ML/s, in step
(5) the undoped GaN layer growth InGaN/GaN multiple quantum wells obtained, the InGaN/GaN Quantum Well is the InGaN in 7 periods
Well layer/GaN barrier layer, wherein InGaN well layer with a thickness of 2nm；GaN barrier layer with a thickness of 10nm.
InGaN/GaN multiple quantum wells in glass substrate manufactured in the present embodiment is either in electrical properties, optical property
On, or in defect concentration, crystalline quality all there is extraordinary performance, test data is close with embodiment 1, no longer superfluous herein
It states.
The above embodiment is a preferred embodiment of the present invention, but embodiments of the present invention are not by the embodiment
Limitation, other any changes, modifications, substitutions, combinations, simplifications made without departing from the spirit and principles of the present invention,
It should be equivalent substitute mode, be included within the scope of the present invention.
Claims (9)
1. the preparation method of the InGaN/GaN multiple quantum wells of growth on a glass substrate, which comprises the following steps:
(1) glass substrate surface polishing, cleaning treatment；
(2) it the growth of aluminum metal layer: in molecular beam epitaxy system, under the conditions of glass substrate temperature is 400~600 DEG C, sinks
Product aluminum metal layer；
(3) growth of silver metal layer: in molecular beam epitaxy system, using the electron beam evaporation function in molecular beam epitaxy system
Can, under the conditions of underlayer temperature is 400~600 DEG C, deposit silver metal layer；
(4) growth of AlN buffer layer: underlayer temperature is 450~550 DEG C, is 4.0~7.2 × 10 in the pressure of reaction chamber-5Pa、
The speed of growth is deposited metal aluminium film under conditions of 0.2~0.8ML/s, then thin to the metallic aluminium using nitrogen plasmon source
Film is nitrogenized, and the power in plasmon source is 300~450W, and nitrogen flow is 1~5sccm, and nitridation time is 10~50 points
Clock obtains AlN film, is conducive to the growth for carrying out subsequent GaN buffer layer；
(5) GaN buffers layer epitaxially grown: underlayer temperature is 450~550 DEG C, is 6.0~7.2 × 10 in the pressure of reaction chamber- 5GaN buffer layer is grown under conditions of Pa, line ratio V/III value are 50~60, the speed of growth is 0.4~0.6ML/s；450~
550 DEG C of grown buffer layers can effectively make GaN in the surface AlN forming core, while enough growth energy are provided for epitaxial growth
Amount；
(6) epitaxial growth of undoped GaN layer: molecular beam epitaxial growth technique is used, underlayer temperature is 500~600 DEG C, anti-
The pressure for answering room is 4.0~5.0 × 10-5Pa, line ratio V/III value are 30~40, the speed of growth is 0.6~0.8ML/s condition
Under, undoped GaN layer is grown on GaN buffer layer；
(7) epitaxial growth of InGaN/GaN multiple quantum wells: using molecular beam epitaxial growth technique, and underlayer temperature is 750~850
DEG C, it is 4.0~5.0 × 10 in the pressure of reaction chamber-5Pa, line ratio V/III value are 30~40, the speed of growth be 0.4~
Under the conditions of 0.6ML/s, InGaN/GaN multiple quantum wells is grown in undoped GaN layer.
2. the preparation method of the InGaN/GaN multiple quantum wells of growth according to claim 1 on a glass substrate, feature
It is, step (1) described polishing, specifically:
Glass substrate surface is polished with diamond mud first, cooperates optical microphotograph sem observation substrate surface, until not having
After having scratch, then the method for using chemically mechanical polishing is processed by shot blasting.
3. the preparation method of the InGaN/GaN multiple quantum wells of growth according to claim 1 on a glass substrate, feature
It is, step (1) described cleaning, specifically:
Glass substrate is put into deionized water and is cleaned by ultrasonic at room temperature 3~5 minutes, glass substrate surface pickup particle is removed,
Successively pass through acetone, ethanol washing again, removes surface organic matter, dried up with drying nitrogen.
4. the preparation method of the InGaN/GaN multiple quantum wells of growth according to claim 1 on a glass substrate, feature
It is, the aluminum metal layer is with a thickness of 150~200 μm.
5. the preparation method of the InGaN/GaN multiple quantum wells of growth according to claim 1 on a glass substrate, feature
Be, the silver metal layer with a thickness of 100~300nm.
6. the preparation method of the InGaN/GaN multiple quantum wells of growth according to claim 1 on a glass substrate, feature
Be, the AlN buffer layer with a thickness of 5~50nm.
7. the preparation method of the InGaN/GaN multiple quantum wells of growth according to claim 1 on a glass substrate, feature
Be, the GaN buffer layer with a thickness of 50~80nm.
8. the preparation method of the InGaN/GaN multiple quantum wells of growth according to claim 1 on a glass substrate, feature
Be, the undoped GaN layer with a thickness of 200~300nm.
9. the preparation method of the InGaN/GaN multiple quantum wells of growth according to claim 1 on a glass substrate, feature
It is, the InGaN/GaN Quantum Well is the InGaN well layer/GaN barrier layer in 7~10 periods, wherein the thickness of InGaN well layer
For 2~3nm；GaN barrier layer with a thickness of 10~13nm.
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