WO2005038889A1 - The method for allngan epitaxial growth on silicon substrate - Google Patents

The method for allngan epitaxial growth on silicon substrate Download PDF

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Publication number
WO2005038889A1
WO2005038889A1 PCT/KR2004/002670 KR2004002670W WO2005038889A1 WO 2005038889 A1 WO2005038889 A1 WO 2005038889A1 KR 2004002670 W KR2004002670 W KR 2004002670W WO 2005038889 A1 WO2005038889 A1 WO 2005038889A1
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Prior art keywords
thin film
silicon substrate
allngan
porous silicon
gaι
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PCT/KR2004/002670
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French (fr)
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Eun Hyun Park
Soo Kun Jeon
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Epivalley Co., Ltd.
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Publication of WO2005038889A1 publication Critical patent/WO2005038889A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/0203—Making porous regions on the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02513—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

Definitions

  • the silicon substrate is in a favorable condition for mass production of AllnGaN-based thin film because its manufacturing technique has been completely developed.
  • There is a technical problem in the growth of AllnGaN-based thin film on the silicon substrate because of considerably severe lattice mismatch between the silicon substrate and AllnGaN-based thin film and structural difference between crystals of the silicon substrate and AllnGaN-based thin film. Accordingly, when AllnGaN-based thin film is grown on the silicon substrate, the grown AllnGaN-based thin film is cracked or a large amount of crystal defects are generated in the thin film.
  • the porous silicon layer absorbs chemicals very well when etched. Accordingly, the AllnGaN-based thin film formed on the porous silicon layer can be easily separated from the silicon substrate b y c hemically etching the porous silicon layer or applying a mechanical force to the porous silicon layer.
  • This thin film separating technique is a very important technique for improving external quantum efficiency of a light-emitting device such as LED. It is very difficult to separate the AllnGaN-based thin film formed on the conventional sapphire substrate or SiC substrate from the substrate and this difficulty acts as an obstacle to improve the external quantum efficiency. However, the AllnGaN-based thin film formed on the porous silicon substrate can be easily separated so that external quantum efficiency of LED can be maximized.
  • Embodiment 1 As shown in FIG. 1 , a porous silicon layer 11 having pores 12 in a predetermined thickness is formed on the surface of the silicon substrate 10 by using a typical pore-making method such as anodizing.
  • the silicon substrate can be any o ne of (100), (111) and (110) silicon wafers. Preferably, (100) or (111) wafer is used as the silicon substrate 10.
  • Embodiment 3 An Al x ln y Ga ⁇ - x- yN thin film is grown on the porous silicon substrate 10, as described in the first embodiment, to construct a device structure A. Then, the Al x ln y Ga ⁇ - ⁇ -y N thin film is separated from the silicon substrate 10 by chemically etching the porous silicon layer 11 or applying a mechanical force to the porous silicon layer 11 , to obtain a light-emitting device such as LED and LD or an electronic device.

Abstract

The present invention relates to a method of growing an AllnGaN-based thin film on a silicon substrate, comprising a first step of making the surface of the silicon substrate on which an AIxInyGa1-x-yN (0≤x≤1, 0≤y≤1, 0≤(x+y)≤1) thin film will be grown porous, to form a porous silicon layer, and a second step of growing the AIxInyGa1-x-yN (0≤x≤1, 0≤y≤1, 0≤(x+y)≤1) thin film on the porous silicon layer, thereby AIxInyGa1-x-yN thin film having considerably reduced crack or lattice defect can be formed on the silicon substrate.

Description

THE METHOD FOR AIInGaN EPITAXIAL GROWTH ON SILICON SUBSTRATE
[Technical Field] The present invention relates to a method of growing an
AllnGaN-based thin film on a silicon substrate and, more particularly, to a method of growing a strain-alleviated AllnGaN-based thin film with high quality using a silicon substrate having a porous silicon layer.
[Background Art] In general, a sapphire substrate or a SiC substrate is used for growing an AllnGaN-based thin film thereon. Although techniques of growing the AllnGaN-based thin film on the sapphire substrate or SiC substrate reach maturity, there is a difficulty in mass production of AllnGaN-based thin film because the sapphire substrate and SiC substrate are expensive and difficult to be processed. In the case of silicon substrate, however, even a tens-inch silicon wafer with high quality can be fabricated and its cost is remarkably cheaper than the sapphire substrate or SiC substrate. Owing to these advantages, studies on the growth of AllnGaN-based thin film on the silicon substrate have been carried out. The silicon substrate is in a favorable condition for mass production of AllnGaN-based thin film because its manufacturing technique has been completely developed. However, there is a technical problem in the growth of AllnGaN-based thin film on the silicon substrate because of considerably severe lattice mismatch between the silicon substrate and AllnGaN-based thin film and structural difference between crystals of the silicon substrate and AllnGaN-based thin film. Accordingly, when AllnGaN-based thin film is grown on the silicon substrate, the grown AllnGaN-based thin film is cracked or a large amount of crystal defects are generated in the thin film. To overcome this, a technique of interposing an AIGaN layer between the silicon substrate and AllnGaN-based thin film to improve the quality of the AllnGaN-based thin film has b een studied. However, there still remain many p roblems in overcoming lattice mismatch of approximately 17%.
[Disclosure] [Technical Problem] Accordingly, the present invention has been made to solve the above-mentioned problems and it is an object of the present invention is to propose a method of growing an AllnGaN-based thin film on a silicon substrate having a porous silicon layer thereon such that the porous silicon layer absorbs strain caused by lattice mismatch between the AllnGaN-based thin film and the silicon substrate, to thereby obtain a high-quality AllnGaN-based thin film. [Technical Solution] The porous s ilicon I ayer i s formed o n t he s ilicon s ubstrate, g enerally using anodizing the silicon substrate in hydrogen fluoride (HF) solution to form a porous silicon substrate (Referring to FIG. 1), which is a mature technology in a typical Silicon processing technology. The porous silicon substrate formed in this manner has plenty of deep pores with a size of several angstroms to several hundred angstroms. Due to these pores, the porous silicon substrate has a property like that of sponge and thus it has a structure capable of absorbing external strain. When the AllnGaN-based thin film is grown on the porous silicon substrate, strain caused by lattice mismatch between the silicon substrate and
AllnGaN-based thin film is absorbed by the porous silicon and thus crack-free AllnGaN-based thin film with high quality can be formed on the silicon substrate. The AllnGaN-based thin film grown on the porous silicon substrate is continuously grown to be bonded to the porous silicon layer such that a flattened AllnGaN-based thin film is formed as shown in FIG. 2. Here, the growth temperature of AllnGaN-based thin film can be 300°C
to 1300°C. Introducing a conventional low-temperature buffer concept, a low-temperature b uffer I ayer i s formed o n t he p orous silicon s ubstrate b y 1 0 anstroms to 1000 angstroms at a temperature of 300°C to 1000°C and then AllnGaN-based thin film is formed thereon, but the AllnGaN-based thin film can be directly formed on the porous silicon substrate without the low-temperature buffer layer. The AllnGaN-based thin film grown in this manner can be used for light-emitting devices including LED and LD and electronic devices. The porous silicon layer formed on the silicon substrate is weaker than the silicon substrate in structure because of plenty of pores. Furthermore, the porous silicon layer absorbs chemicals very well when etched. Accordingly, the AllnGaN-based thin film formed on the porous silicon layer can be easily separated from the silicon substrate b y c hemically etching the porous silicon layer or applying a mechanical force to the porous silicon layer. This thin film separating technique is a very important technique for improving external quantum efficiency of a light-emitting device such as LED. It is very difficult to separate the AllnGaN-based thin film formed on the conventional sapphire substrate or SiC substrate from the substrate and this difficulty acts as an obstacle to improve the external quantum efficiency. However, the AllnGaN-based thin film formed on the porous silicon substrate can be easily separated so that external quantum efficiency of LED can be maximized. [Advantageous Effects] The method of growing an AlχlnyGaι-x-yN thin film on the silicon substrate having the porous silicon layer according to the present invention has the following advantages. (1) The porous silicon layer absorbs strain caused by lattice mismatch between the silicon substrate and the AlxlnyGaι-χ-yN thin film and thus AlxlnyGai-x-yN thin film having considerably reduced crack or lattice defect can be formed on the silicon substrate. (2) The AlxlnyGai-x-yN thin film can be easily separated from the silicon substrate by chemically etching the porous silicon layer or applying a mechanical force to the porous silicon layer. (3) The silicon substrate is much cheaper than the conventional sapphire substrate or SiC substrate. Also, high techniques of manufacturing the silicon substrate can fabricate a large-size silicon substrate with high quality, thus, mass production of the AlxlnyGaι.x-yN thin film is facilitated.
[Description of Drawings] Further objects and advantages of the invention can be more fully understood from the following detailed description taken in conjunction with the accompanying drawings, in which: FIGs. 1 and 2 show a method of growing AllnGaN-based thin film on a silicon layer having a porous silicon layer according to an embodiment of the present invention; FIG. 3 shows another embodiment of the present invention; FIG. 4 shows another embodiment of the present invention; and FIG. 5 shows another embodiment of the present invention.
[Mode for Invention] A method of growing an AllnGaN-based thin film on a silicon substrate having a porous silicon layer according to the present invention will now be explained in detail with reference to the attached drawings. Embodiment 1 As shown in FIG. 1 , a porous silicon layer 11 having pores 12 in a predetermined thickness is formed on the surface of the silicon substrate 10 by using a typical pore-making method such as anodizing. Here, the silicon substrate can be any o ne of (100), (111) and (110) silicon wafers. Preferably, (100) or (111) wafer is used as the silicon substrate 10. In addition, an N-doped or P-doped silicon wafer having doping concentration of 1x1015 to 1x1020 is used as the silicon substrate. It is preferable that the porous silicon layer has a thickness of 0.01 to 100μm. Referring to FIG. 2, an AllnGaN-based thin film 13 is grown on the silicon substrate 10 having the porous silicon layer 11 with pores 12. Here, AlxlnyGaι.x-yN (0<x<1, 0≤y≤1, 0≤(x+y)≤1) is used for the AllnGaN-based thin film. In the growth of AlxlnyGaι.x.yN thin film, a low-temperature buffer is formed by 10 to 1000 angstroms at a temperature of 300°C to 1000°C and
AlχlnyGaι-x-yN is grown thereon at a temperature higher than 1000°C, which is used in the conventional method of growing a GaN-based thin film on the sapphire substrate. Otherwise, AlxlnyGaι-χ-yN can be directly grown on the porous silicon substrate at a temperature higher than 1000°C to form a high-quality AlxlnyGaι-x-yN thin film. Embodiment 2 The high-quality AlxlnyGaι-x-yN thin film is formed on the porous silicon substrate 10 to construct an LED (light emitting diode) as shown in FIG. 3. Specifically, a buffer layer 100, an undoped-GaN layer 200, an N-type GaN layer 300, a MQW (multi-quantum wells) layer 400 (an example of an active layer g enerating photons using recombination of electrons and holes), and a P-type GaN layer 500 are sequentially deposited on the silicon substrate 10 having the porous silicon layer 11 using MOCVD. Then, an n-type electrode 600, a transparent electrode 700, a p-type electrode 800 and a SiNx passivation layer 900 are sequentially formed. In addition, light-emitting diodes having various structures can be formed on the porous silicon substrate 10, which can be understood by those skilled in the art. Furthermore, electronic devices such as HBT (heterojunction bipolar transistor), HEMT (high electron mobility transistor), FET (field effect transistor) and so on can be formed on the porous silicon substrate using the method of the first embodiment. Embodiment 3 An AlxlnyGaι-x-yN thin film is grown on the porous silicon substrate 10, as described in the first embodiment, to construct a device structure A. Then, the AlxlnyGaι-χ-yN thin film is separated from the silicon substrate 10 by chemically etching the porous silicon layer 11 or applying a mechanical force to the porous silicon layer 11 , to obtain a light-emitting device such as LED and LD or an electronic device. FIG. 4 shows an example of separating the device structure A from the silicon substrate 10 using a chemical etching method, and FIG. 5 shows an example of applying a mechanical force B to the porous silicon layer 11 to form crack so as to separate the device structure A from the silicon substrate 10. For chemical etching, a chemical material such as sulfuric acid, phosphoric acid, nitric acid, chromic acid, hydrogen peroxide solution, hydrofluoric acid, KOH, EDP can be used. While the present invention has been described with reference to the particular illustrative embodiments, it is not to be restricted by the embodiments but only by the appended claims. It is to be appreciated that those skilled in the art can change or modify the embodiments without departing from the scope and spirit of the present invention.

Claims

1. A method of growing an AllnGaN-based thin film on a silicon substrate, comprising: a first step of making the surface of the silicon substrate on which an AlxlnyGaι-x-yN (O≤x≤l , O≤y≤l , 0≤(x+y)≤1) thin film will be grown porous, to form a porous silicon layer; and, a second step of growing the AlxlnyGaι-x-yN (O≤x≤l, O≤y≤l, 0≤(x+y)≤1) thin film on the porous silicon layer.
2. The method as claimed in claim 1, wherein the porous silicon layer is formed to a thickness of 0.01 μm to 100μm.
3. The method as claimed in claim 1 , wherein the second step comprises the steps of: growing a first AlxlnyGaι-x-yN (0≤x≤1, 0≤y≤1 , 0≤(x+y)≤1) thin film on the porous silicon layer at a first temperature; and growing a second AlxlnyGaι-x-yN (0≤x≤1, 0≤y≤1 , 0≤(x+y)≤1) thin film on
the first AlxlnyGa1-x.yN (0≤x≤1 , 0≤y≤1, 0≤(x+y)≤1) thin film at a second temperature higher than the first temperature.
4. The method as claimed in claim 3, wherein the first temperature ranges from 300°C to 1000°C and the second temperature is higher than
1000°C.
5. The method as claimed in claim 1, wherein the AlxlnyGaι-x-yN (O≤x≤l ,
O≤y≤l , 0≤(x+y)≤1 ) thin film is grown at a temperature higher than 1000°C.
6. The method as claimed in claim 1 , further comprising a third step of separating the AlxlnyGaι-χ.yN (O≤x≤l, O≤y≤l, 0≤(x+y)≤1) thin film formed on the porous silicon layer from the silicon substrate.
7. The method as claimed in claim 6, wherein the AlxlnyGaι-x-yN (O≤x≤l ,
O≤y≤l , 0≤(x+y)≤1) thin film is separated from the silicon substrate using chemical etching.
8. The m ethod as claimed i n claim 1 . wherein i n the second step, a plurality of AlxlnyGaι-x-yN (O≤x≤l, O≤y≤l, 0≤(x+y)≤1) thin films having different compositions are grown and the plurality of AlχlnyGaι-x-yN (O≤x≤l, O≤y≤l ,
0≤(x+y)≤1) thin films include an active layer generating photons using recombination of electrons and holes.
PCT/KR2004/002670 2003-10-18 2004-10-18 The method for allngan epitaxial growth on silicon substrate WO2005038889A1 (en)

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Cited By (6)

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WO2010112980A1 (en) * 2009-04-02 2010-10-07 Philips Lumileds Lighting Company, Llc Iii-nitride light emitting device including porous semiconductor layer
US7928448B2 (en) 2007-12-04 2011-04-19 Philips Lumileds Lighting Company, Llc III-nitride light emitting device including porous semiconductor layer
CN102420274A (en) * 2011-10-15 2012-04-18 徐州师范大学 White light emission device based on ultraviolet light excitation and preparation method thereof
CN102644112A (en) * 2011-02-17 2012-08-22 中国科学院合肥物质科学研究院 Alumina photonic crystal heterojunction and preparation method thereof
CN105244430A (en) * 2014-06-30 2016-01-13 五邑大学 White light-emitting diode and manufacturing method thereof
US9543470B2 (en) 2013-08-06 2017-01-10 Samsung Electronics Co., Ltd. Semiconductor light emitting device

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CN102231414A (en) * 2011-06-03 2011-11-02 王楚雯 Formation method of LED

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JPH11177119A (en) * 1997-12-15 1999-07-02 Fuji Electric Co Ltd Photodiode and its manufacture
KR20020076198A (en) * 2001-03-27 2002-10-09 닛본 덴기 가부시끼가이샤 Semiconductor substrate made of group iii nitride, and process for manufacture thereof

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JPH04223330A (en) * 1990-12-25 1992-08-13 Univ Nagoya Method of growing compound semiconductor single crystal on a single crystal silicon substrate
JPH06177037A (en) * 1992-10-09 1994-06-24 Fujitsu Ltd Silicon substrate compound semiconductor device
JPH11177119A (en) * 1997-12-15 1999-07-02 Fuji Electric Co Ltd Photodiode and its manufacture
KR20020076198A (en) * 2001-03-27 2002-10-09 닛본 덴기 가부시끼가이샤 Semiconductor substrate made of group iii nitride, and process for manufacture thereof

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7928448B2 (en) 2007-12-04 2011-04-19 Philips Lumileds Lighting Company, Llc III-nitride light emitting device including porous semiconductor layer
US9385265B2 (en) 2007-12-04 2016-07-05 Lumileds Llc III-nitride light emitting device including porous semiconductor
US10090435B2 (en) 2007-12-04 2018-10-02 Lumileds Llc III-nitride light emitting device including porous semiconductor
US10672949B2 (en) 2007-12-04 2020-06-02 Lumileds Llc Light emitting device including porous semiconductor
WO2010112980A1 (en) * 2009-04-02 2010-10-07 Philips Lumileds Lighting Company, Llc Iii-nitride light emitting device including porous semiconductor layer
CN102644112A (en) * 2011-02-17 2012-08-22 中国科学院合肥物质科学研究院 Alumina photonic crystal heterojunction and preparation method thereof
CN102644112B (en) * 2011-02-17 2014-12-17 中国科学院合肥物质科学研究院 Alumina photonic crystal heterojunction and preparation method thereof
CN102420274A (en) * 2011-10-15 2012-04-18 徐州师范大学 White light emission device based on ultraviolet light excitation and preparation method thereof
US9543470B2 (en) 2013-08-06 2017-01-10 Samsung Electronics Co., Ltd. Semiconductor light emitting device
CN105244430A (en) * 2014-06-30 2016-01-13 五邑大学 White light-emitting diode and manufacturing method thereof

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