CN102104094A - Light-emitting component and manufacturing method thereof - Google Patents
Light-emitting component and manufacturing method thereof Download PDFInfo
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- CN102104094A CN102104094A CN 200910260838 CN200910260838A CN102104094A CN 102104094 A CN102104094 A CN 102104094A CN 200910260838 CN200910260838 CN 200910260838 CN 200910260838 A CN200910260838 A CN 200910260838A CN 102104094 A CN102104094 A CN 102104094A
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Abstract
The invention relates to a light-emitting component and a manufacturing method thereof. The light-emitting component contains an n-shaped bound layer, a p-shaped bound layer and an active layer, wherein the active layer is positioned between the n-shaped bound layer and the p-shaped bound layer and in a multiple-quantum well structure formed by piling multiple barrier layers and multiple well layers in a stagger way; the barrier layers are doped with p-shaped impurities to increase the number of cavities, the barrier layers which are closer to the n-shaped bound layer have lower doping concentration, and the barrier layers which are closer to the p-shaped bound layer have higher doping concentration so as to form a barrier layer structure with gradual change type doping concentration. The light-emitting component can enhance the combination probability of the cavities and electrons, thereby enhancing the light-emitting efficiency.
Description
Technical field
The present invention relates to light-emitting component, especially a kind of light-emitting diode with multiple quantum trap structure.
Background technology
Light-emitting diode (Light Emitting Diode, LED) owing to have advantages such as volume is little, the life-span is long, driving voltage is low, power consumption is low, reaction speed is fast, vibration strength is good, be widely used in as in the fields such as automobile, computer, communication and consumption electronic product.
Generally speaking, light-emitting diode tool active layer (active layer) places two kinds of bond course (p-type that difference is electrical; N-type cladding layers) between.When the electrode in two bond courses tops applied drive current, active layer can be injected in the electronics of two bond courses and hole, in active layer in conjunction with and emit light, its light tool omni-directional can be in each surface ejaculation of light-emitting diode.Usually, active layer can be single quantum well structure layer (SQW) or multiple quantum trap structure layer (MQW).(SQW) compares with single quantum well structure layer, and multiple quantum trap structure layer (MQW) has preferred photoelectric conversion efficiency, even when electric current is very little, it still can see through many barrier layers and the trap layer piles up the little gap structure that forms, and is light with current conversion.
Yet the multiple quantum trap structure layer is subjected to the influence of charge carrier overflow and piezoelectric field effect easily, makes electronics, hole be difficult to be limited to effectively carry out combination in the multiple quantum trap structure, thereby makes the luminous efficiency of light-emitting diode be difficult to promote.
Summary of the invention
The present invention proposes a kind of light-emitting component, comprises n type bond course; P type bond course; And active layer, between n type bond course and p type bond course.Active layer is to be staggeredly stacked and the multiple quantum trap structure that forms by a plurality of barrier layers and a plurality of trap layer.
The light-emitting component that the present invention proposes comprises a kind of multiple quantum trap structure, at barrier layer doped p type impurity to increase the hole number, wherein the barrier layer doping content the closer to n type bond course is low more, barrier layer doping content the closer to p type bond course is high more, to form the barrier layer structure of tool gradual change type doping content.
The present invention proposes a kind of multiple quantum trap structure, wherein can be magnesium in barrier layer doped p type impurity, and doping content is 1 * 10
16～5 * 10
17/ cm
3
The present invention proposes a kind of multiple quantum trap structure, and wherein barrier layer is made up of gallium nitride (GaN), and the trap layer is by InGaN (In
xGa
1-xN, 0＜x＜1) form.
The present invention proposes a kind of multiple quantum trap structure, and wherein each layer barrier layer comprises at least one time barrier layer, and each layer barrier layer be made up of InGaN (InGaN), and inferior barrier layer is made up of gallium nitride (GaN).In inferior barrier layer doped p type impurity to increase the hole number.Its doped p type impurity can be magnesium, and doping content is 1 * 10
16～5 * 10
17/ cm
3
Description of drawings
The preferred embodiments of the present invention will be aided with following accompanying drawing and do more detailed description in the comment of execution mode:
Fig. 1 describes the schematic diagram of the epitaxial structure 1 of the embodiment of the invention one.
Fig. 2 describes the schematic diagram of the epitaxial structure 2 of the embodiment of the invention two.
Fig. 3 describes the schematic diagram of the epitaxial structure 3 of the embodiment of the invention three.
Description of reference numerals
1,2,3: epitaxial structure
10: the growth substrate
20: resilient coating
30:n type bond course
40: active layer
40A: barrier layer
40B: trap layer
40a: inferior barrier layer
40a
1, 40a
2,,, 40a
n: inferior barrier layer
50:p type bond course
Embodiment
First embodiment of the invention discloses about a kind of light-emitting component that comprises active layer.Its active layer is to be staggeredly stacked and to be formed multiple quantum trap structure by a plurality of barrier layers and a plurality of trap layer, wherein in barrier layer doped p type impurity to increase the hole number, and the barrier layer doping content the closer to n type bond course is low more, barrier layer doping content the closer to p type bond course is high more, to form the barrier layer structure of tool gradual change type doping content.More detailed and complete for the narration that makes present embodiment, can cooperate the accompanying drawing of Fig. 1, with reference to following description.
Fig. 1 discloses first embodiment of the epitaxial structure that meets light-emitting component of the present invention, and epitaxial structure 1 comprises that growth substrate 10, resilient coating 20 are formed on the growth substrate 10, n type bond course (claddinglayer) 30 is formed on the resilient coating 20, active layer (active layer) 40 is formed on the n type bond course 30 and p type bond course 50 is formed on the active layer 40.The method that forms epitaxial structure 1 comprises provides growth substrate 10; Then, on the growth substrate 10 with Metalorganic chemical vapor deposition method (Metal-Organic Chemical Vapor Deposition) epitaxial growth resilient coating 20 under first growth condition, after the growth of finishing resilient coating 20, growth n type bond course 30 under second growth condition.Grow up in finishing n type bond course 30, growth active layer 40 under the 3rd growth condition, and under the 4th growth condition growth p type bond course 50 to form the epitaxial structure of light-emitting component.Wherein, the lattice constant of resilient coating 20 can improve the extension quality and reduce lattice defect between n type bond course 30 and growth substrate 10.In definition of the present invention, " growth condition " speech is to comprise that at least one processing parameter setting value is selected from temperature, pressure and gas flow, reaches the group that other processing parameter setting values are formed.Wherein the active layer 40 of growing up down in one of the 3rd growth condition is by a plurality of barrier layer 40A
1, 40A
2,,, 40A
n(n＞1) and a plurality of trap layer 40B are staggeredly stacked and the multiple quantum trap structure that forms.In present embodiment, barrier layer 40A wherein
1, 40A
2,,, 40A
n(GaN) formed by gallium nitride, and trap layer 40B is by InGaN (In
xGa
1-xN, 0＜x＜1) form.Mix the p type impurity of magnesium (Mg) for example to increase the hole number in barrier layer, and the barrier layer doping content the closer to n type bond course 30 is low more, barrier layer doping content the closer to p type bond course 50 is higher, forming the barrier layer structure of tool gradual change type doping content, its doping content scope is between being 1 * 10
16～5 * 10
17/ cm
3Between.This kind multiple quantum trap structure can reach following effect at least: 1. the barrier layer doping content the closer to p type bond course is high more, can increase the efficient that quantum well is injected in the hole.2. the barrier layer doping content the closer to n type bond course is low more, can cause the effect that stops for electronics, avoids a large amount of electronics overflows to the p side.
Second embodiment of the invention discloses about a kind of light-emitting component that comprises active layer.Its active layer is to be staggeredly stacked and the multiple quantum trap structure that forms by a plurality of barrier layers and a plurality of trap layer, and wherein each layer barrier layer comprises at least one time barrier layer, has the light-emitting component of inferior barrier layer with formation.More detailed and complete for the narration that makes present embodiment, can cooperate the accompanying drawing of Fig. 2, with reference to following description.Fig. 2 discloses second embodiment of the epitaxial structure that meets light-emitting component of the present invention, and epitaxial structure 2 compares with epitaxial structure 1, and except active layer (active layer) 40 structure differences, all the other each layer structures are identical with growth condition.Wherein the active layer 40 of growing up down in the 3rd two growth conditions is to be staggeredly stacked and the multiple quantum trap structure that forms by a plurality of barrier layer 40A and a plurality of trap layer 40B, and wherein each layer barrier layer 40A comprises at least one inferior barrier layer 40a.In present embodiment, the material that forms barrier layer 40A is InGaN (InGaN), and the material that forms time barrier layer 40a is gallium nitride (GaN), and the material that forms the trap layer is InGaN (In
xGa
1-xN, 0＜x＜1).Design this kind multiple quantum trap structure and can reduce the band curvature phenomenon that polarization charge caused between barrier layer and the trap layer, and can increase the joint efficiency of electron hole in quantum well.
Third embodiment of the invention discloses about a kind of light-emitting component that comprises active layer.Its active layer is to be staggeredly stacked and the multiple quantum trap structure that forms by a plurality of barrier layers and a plurality of trap layer, wherein each layer barrier layer comprises at least one time barrier layer, and mix the p type impurity of magnesium for example to increase the hole number in inferior barrier layer, form light-emitting component with doped p type impurity time barrier layer.More detailed and complete for the narration that makes present embodiment, can cooperate the accompanying drawing of Fig. 3, with reference to following description.Fig. 3 discloses the 3rd embodiment of the epitaxial structure that meets light-emitting component of the present invention, and epitaxial structure 3 compares with epitaxial structure 2, and except active layer (active layer) 40 structure differences, all the other each layer structures are identical with growth condition.Wherein the active layer 40 of growing up down in the 3rd three growth conditions is to be staggeredly stacked and the multiple quantum trap structure that forms by a plurality of barrier layer 40A and a plurality of trap layer 40B, and wherein each layer barrier layer 40A comprises at least one inferior barrier layer 40a
1, 40a
2,,, 40a
n(n＞1).In present embodiment, the material that forms barrier layer 40A is InGaN (InGaN), forms time barrier layer 40a
1, 40a
2,,, 40a
nMaterial be gallium nitride (GaN), and for example p type impurity of magnesium mixes, wherein doping content can be identical or low more the closer to the inferior barrier layer doping content of n type bond course 30, inferior barrier layer doping content the closer to p type bond course 50 is higher, forming the inferior barrier layer structure of tool gradual change type doping content, its doping content scope is between being 1 * 10
16～5 * 10
17/ cm
3Between.The material that forms the trap layer is InGaN (In
xGa
1-xN, 0＜x＜1).Design this kind multiple quantum trap structure and can reduce the band curvature phenomenon that polarization charge caused between barrier layer and the trap layer, and can increase the joint efficiency of electron hole in quantum well.
Above-mentioned all embodiment, wherein, the material of described resilient coating, n type bond course, p type bond course and active layer comprises the III-V compounds of group, for example the material of gallium nitride series or gallium phosphide series.Described growth substrate for example is to comprise that at least a material is selected from the group that sapphire, carborundum, gallium nitride and aluminium nitride are formed.Described resilient coating, n type bond course and p type bond course can be the single or multiple lift structure, for example are superlattice structure.In addition, described epitaxial light emission structure of the present invention is not limited to grow up on the described growth substrate with pattern of growth, and other generation types for example directly engage with juncture or are engaged to heat conduction or electrically-conductive backing plate also belongs to scope of the present invention by medium.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; any persons of ordinary skill in the technical field of the present invention; without departing from the spirit and scope of the present invention; when can being used for a variety of modifications and variations, so protection scope of the present invention defines and is as the criterion when looking appended claim.
Claims (17)
1. light-emitting component comprises at least:
The first electrical semiconductor layer;
The second electrical semiconductor layer; And
Active layer, between this first electrical semiconductor layer and this second electrical semiconductor layer, and this active layer is to be staggeredly stacked and to be formed multiple quantum trap structure by a plurality of barrier layers and a plurality of trap layer, wherein this barrier layer doped p type impurity is to increase the hole number, and the doping content of this p type impurity is low more the closer to this first electrical semiconductor layer concentration, high more the closer to this second electrical semiconductor layer concentration, to form the barrier layer structure of tool gradual change type doping content.
2. light-emitting component as claimed in claim 1, wherein this first electrical semiconductor layer is a n type bond course, this second electrical semiconductor layer is a p type bond course.
3. light-emitting component as claimed in claim 1, wherein this p type impurity can be magnesium, and the doping content of this p type impurity is 1 * 10 in the barrier layer structure of this tool gradual change type doping content
16～5 * 10
17/ cm
3Between.
4. light-emitting component as claimed in claim 1, wherein this barrier layer is made up of gallium nitride, and this trap layer is by InGaN (In
xGa
1-xN, 0＜x＜1) form.
5. light-emitting component comprises at least:
The first electrical semiconductor layer;
The second electrical semiconductor layer; And
Active layer, between this first electrical semiconductor layer and this second electrical semiconductor layer, and this active layer is to be staggeredly stacked and to be formed multiple quantum trap structure by a plurality of barrier layers and a plurality of trap layer, wherein this each layer barrier layer comprises at least one time barrier layer.
6. light-emitting component as claimed in claim 5, wherein this first electrical semiconductor layer is a n type bond course, this second electrical semiconductor layer is a p type bond course.
7. light-emitting component as claimed in claim 5, wherein this time barrier layer is made up of gallium nitride, and this barrier layer is made up of InGaN, and this trap layer is by InGaN (In
xGa
1-xN, 0＜x＜1) form.
8. light-emitting component as claimed in claim 5, wherein this time barrier layer doped p type impurity to be increasing the hole number, and this p type impurity can be magnesium.
9. light-emitting component as claimed in claim 8, wherein this time barrier layer doped p type impurity concentration can be identical.
10. light-emitting component as claimed in claim 8, wherein this time barrier layer doped p type impurity concentration is low more the closer to this first electrical semiconductor layer concentration, high more the closer to this second electrical semiconductor layer concentration, with the inferior barrier layer structure of formation tool gradual change type doping content, and the doping content of this p type impurity is 1 * 10 in the inferior barrier layer structure of this tool gradual change type doping content
16～5 * 10
17/ cm
3Between.
11. the manufacture method of a light-emitting component, its step comprises:
Substrate is provided;
In growth resilient coating under first growth condition on this substrate;
The first electrical semiconductor layer grow up down on this resilient coating in second growth condition;
The growth active layer is on this first electrical semiconductive layer under one of the 3rd growth condition; And
The second electrical semiconductor layer grow up down on this active layer in the 4th growth condition;
Wherein this active layer is to be staggeredly stacked and to be formed multiple quantum trap structure by a plurality of barrier layers and a plurality of trap layer, and this barrier layer doped p type impurity, its p type doping impurity concentration of barrier layer the closer to this first electrical semiconductor layer is low more, its p type doping impurity concentration of barrier layer the closer to this second electrical semiconductor layer is high more, to form the barrier layer structure of tool gradual change type doping content.
12. manufacture method as claimed in claim 11, wherein this growth condition comprises that at least one processing parameter setting value is selected from temperature, pressure and gas flow, reaches the group that other processing parameter setting values are formed.
13. the manufacture method of a light-emitting component, its step comprises:
Substrate is provided;
In growth resilient coating under first growth condition on this substrate;
The first electrical semiconductor layer grow up down on this resilient coating in second growth condition;
In growth active layer under the 3rd two growth conditions on this first electrical semiconductor layer; And
The second electrical semiconductor layer grow up down on this active layer in the 4th growth condition;
Wherein this active layer is to be staggeredly stacked and to be formed multiple quantum trap structure by a plurality of barrier layers and a plurality of trap layer, and this each layer barrier layer comprises at least one time barrier layer.
14. manufacture method as claimed in claim 13, wherein this growth condition comprises that at least one processing parameter setting value is selected from temperature, pressure and gas flow, reaches the group that other processing parameter setting values are formed.
15. the manufacture method of a light-emitting component, its step comprises:
Substrate is provided;
In growth resilient coating under first growth condition on this substrate;
The first electrical semiconductor layer grow up down on this resilient coating in second growth condition;
In growth active layer under the 3rd three growth conditions on this first electrical semiconductor layer; And
The second electrical semiconductor layer grow up down on this active layer in the 4th growth condition;
Wherein this active layer is to be staggeredly stacked and to be formed multiple quantum trap structure by a plurality of barrier layers and a plurality of trap layer; This each layer barrier layer comprises at least one time barrier layer, but and this time barrier layer impurity.
16. manufacture method as claimed in claim 15, but wherein this time barrier layer doped p type impurity to increase the hole number.
17. manufacture method as claimed in claim 15, wherein this growth condition comprises that at least one processing parameter setting value is selected from temperature, pressure and gas flow, reaches the group that other processing parameter setting values are formed.
Priority Applications (2)
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| CN201310309950.8A CN103441196B (en) | 2009-12-21 | 2009-12-21 | Light-emitting component and its manufacture method |
| CN 200910260838 CN102104094B (en) | 2009-12-21 | 2009-12-21 | Light-emitting component and manufacturing method thereof |
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| CN102299223A (en) * | 2011-09-19 | 2011-12-28 | 厦门乾照光电股份有限公司 | Epitaxial structure of light-emitting diode and manufacturing method thereof |
| CN103545406A (en) * | 2012-07-16 | 2014-01-29 | 展晶科技(深圳)有限公司 | Multi-quantum well structure and light-emitting diode |
| CN104157760A (en) * | 2014-08-06 | 2014-11-19 | 湘能华磊光电股份有限公司 | Epitaxial wafer of LED (Light Emitting Diode) and manufacturing method thereof |
| CN104253181A (en) * | 2013-06-26 | 2014-12-31 | 南通同方半导体有限公司 | LED (Light Emitting Diode) epitaxy structure with multiple barrier layers |
| CN104266143A (en) * | 2014-09-15 | 2015-01-07 | 潘凡峰 | Anti-explosion light-emitting diode (LED) energy saving lamp used under severe environment |
| CN111223764A (en) * | 2020-03-18 | 2020-06-02 | 湘能华磊光电股份有限公司 | LED epitaxial growth method for improving radiation recombination efficiency |
| CN113257962A (en) * | 2021-05-11 | 2021-08-13 | 东南大学 | Ultraviolet light-emitting diode with p-i-n type multi-quantum well structure |
| WO2023082092A1 (en) * | 2021-11-10 | 2023-05-19 | 重庆康佳光电技术研究院有限公司 | Semiconductor epitaxial structure, application thereof, and manufacturing method therefor |
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Family Cites Families (3)
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|---|---|---|---|---|
| US6586762B2 (en) * | 2000-07-07 | 2003-07-01 | Nichia Corporation | Nitride semiconductor device with improved lifetime and high output power |
| TWI234915B (en) * | 2002-11-18 | 2005-06-21 | Pioneer Corp | Semiconductor light-emitting element and method of manufacturing the same |
| KR100764433B1 (en) * | 2006-04-06 | 2007-10-05 | 삼성전기주식회사 | Nitride semiconductor device |
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2009
- 2009-12-21 CN CN 200910260838 patent/CN102104094B/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102299223A (en) * | 2011-09-19 | 2011-12-28 | 厦门乾照光电股份有限公司 | Epitaxial structure of light-emitting diode and manufacturing method thereof |
| CN103545406A (en) * | 2012-07-16 | 2014-01-29 | 展晶科技(深圳)有限公司 | Multi-quantum well structure and light-emitting diode |
| CN104253181A (en) * | 2013-06-26 | 2014-12-31 | 南通同方半导体有限公司 | LED (Light Emitting Diode) epitaxy structure with multiple barrier layers |
| CN104157760A (en) * | 2014-08-06 | 2014-11-19 | 湘能华磊光电股份有限公司 | Epitaxial wafer of LED (Light Emitting Diode) and manufacturing method thereof |
| CN104266143A (en) * | 2014-09-15 | 2015-01-07 | 潘凡峰 | Anti-explosion light-emitting diode (LED) energy saving lamp used under severe environment |
| CN104266143B (en) * | 2014-09-15 | 2015-10-28 | 潘凡峰 | The anti-explosion LED electricity-saving lamp used under a kind of adverse circumstances |
| CN111223764A (en) * | 2020-03-18 | 2020-06-02 | 湘能华磊光电股份有限公司 | LED epitaxial growth method for improving radiation recombination efficiency |
| CN111223764B (en) * | 2020-03-18 | 2023-06-30 | 湘能华磊光电股份有限公司 | LED epitaxial growth method for improving radiation recombination efficiency |
| CN113257962A (en) * | 2021-05-11 | 2021-08-13 | 东南大学 | Ultraviolet light-emitting diode with p-i-n type multi-quantum well structure |
| WO2023082092A1 (en) * | 2021-11-10 | 2023-05-19 | 重庆康佳光电技术研究院有限公司 | Semiconductor epitaxial structure, application thereof, and manufacturing method therefor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103441196A (en) | 2013-12-11 |
| CN103441196B (en) | 2017-03-01 |
| CN102104094B (en) | 2013-08-21 |
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