CN103441196A - Luminous element and manufacturing method for same - Google Patents
Luminous element and manufacturing method for same Download PDFInfo
- Publication number
- CN103441196A CN103441196A CN2013103099508A CN201310309950A CN103441196A CN 103441196 A CN103441196 A CN 103441196A CN 2013103099508 A CN2013103099508 A CN 2013103099508A CN 201310309950 A CN201310309950 A CN 201310309950A CN 103441196 A CN103441196 A CN 103441196A
- Authority
- CN
- China
- Prior art keywords
- layer
- barrier layer
- electrical semiconductor
- light
- barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Led Devices (AREA)
Abstract
The invention relates to a luminous element and a manufacturing method for the luminous element. The luminous element at least comprises a first electrical property semiconductor layer, a second electrical property semiconductor layer and an active layer. The active layer is located between the first electrical property semiconductor layer and the second electrical property semiconductor layer. The active layer comprises a multi-quantum well structure which is formed by a plurality of barrier layers and a plurality of well layers in a staggering-piling mode. Each barrier layer comprises at least one secondary barrier layer. The element can increase the probability of the combination of holes and electrons, and the luminous efficiency is improved.
Description
The application is to be dividing an application of on December 21st, 2009 and the denomination of invention Chinese invention patent application 200910260838.3 that is " light-emitting component and manufacture method thereof " the applying date.
Technical field
The present invention relates to light-emitting component, especially a kind of light-emitting diode with multiple quantum trap structure.
Background technology
Light-emitting diode (Light Emitting Diode, LED) owing to thering is the advantages such as volume is little, the life-span is long, driving voltage is low, power consumption is low, reaction speed is fast, vibration strength is good, be widely used in as in the fields such as automobile, computer, communication and consumption electronic product.
Generally speaking, light-emitting diode tool active layer (active layer), be placed in two kinds of bond course (p-type& that difference is electrical; N-type cladding layers) between.When the electrode in two bond courses tops applies drive current, active layer can be injected in the electronics of two bond courses and hole, in active layer in conjunction with and emit light, its light tool omni-directional, can be in each surface ejaculation of light-emitting diode.Usually, active layer can be single quantum well structure layer (SQW) or multiple quantum trap structure layer (MQW).With single quantum well structure layer (SQW), compare, multiple quantum trap structure layer (MQW) has preferred photoelectric conversion efficiency, even when electric current is very little, it still can see through many barrier layers and the stacking little gap structure formed of trap layer, by current conversion, is light.
Yet the multiple quantum trap structure layer easily is subject to the impact of charge carrier overflow and piezoelectric field effect, makes electronics, hole be difficult to effectively be limited in multiple quantum trap structure carry out combination, thereby make the luminous efficiency of light-emitting diode be difficult to promote.
Summary of the invention
The present invention proposes a kind of light-emitting component, comprises the N-shaped bond course; The p-type bond course; And active layer, between N-shaped bond course and p-type bond course.Active layer is to be staggeredly stacked and the multiple quantum trap structure that forms by a plurality of barrier layers and a plurality of trap layer.
The light-emitting component that the present invention proposes comprises a kind of multiple quantum trap structure, at barrier layer doped p type impurity to increase the hole number, wherein the barrier layer doping content the closer to the N-shaped bond course is lower, barrier layer doping content the closer to the p-type bond course is higher, to form the barrier layer structure of tool gradual change type doping content.
The present invention proposes a kind of multiple quantum trap structure, and wherein the p-type impurity in the barrier layer doping can be magnesium, and doping content is 1 * 10
16～5 * 10
17/ cm
3.
The present invention proposes a kind of multiple quantum trap structure, and wherein barrier layer is comprised of gallium nitride (GaN), and the trap layer is by InGaN (In
xga
1-xn, 0<x<1) institute forms.
The present invention proposes a kind of multiple quantum trap structure, and wherein every one deck barrier layer comprises at least one time barrier layer, and every one deck barrier layer is comprised of InGaN (InGaN), and inferior barrier layer is comprised of gallium nitride (GaN).In inferior barrier layer doped p type impurity to increase the hole number.The p-type impurity of its doping can be magnesium, and doping content is 1 * 10
16～5 * 10
17/ cm
3.
The present invention proposes a kind of light-emitting component, at least comprises: the first electrical semiconductor layer; The second electrical semiconductor layer; And active layer, between this first electrical semiconductor layer and this second electrical semiconductor layer, and this active layer comprises by a plurality of barrier layers and a plurality of trap layer and being staggeredly stacked and the multiple quantum trap structure that forms, wherein the plurality of barrier layer comprises respectively barrier layer at least one time.
The present invention proposes a kind of manufacture method of light-emitting component, and its step comprises:
The first electrical semiconductor layer is provided; The growth active layer is on this first electrical semiconductor layer; And grow up the second electrical semiconductor layer on this active layer; Wherein this active layer comprises stacking a plurality of barrier layers interlaced with each other and a plurality of trap layer, and the plurality of barrier layer comprises respectively barrier layer at least one time.
The accompanying drawing explanation
The preferred embodiments of the present invention will be aided with following accompanying drawing and do more detailed description in the comment of execution mode:
Fig. 1 describes the schematic diagram of the epitaxial structure 1 of the embodiment of the present invention one.
Fig. 2 describes the schematic diagram of the epitaxial structure 2 of the embodiment of the present invention two.
Fig. 3 describes the schematic diagram of the epitaxial structure 3 of the embodiment of the present invention three.
Description of reference numerals
1,2,3: epitaxial structure
10: the growth substrate
20: resilient coating
30:n type bond course
40: active layer
40A: barrier layer
40B: trap layer
40a: inferior barrier layer
40a
1, 40a
2,,, 40a
n: inferior barrier layer
50:p type bond course
Embodiment
First embodiment of the invention discloses about a kind of light-emitting component that comprises active layer.Its active layer is be staggeredly stacked and formed multiple quantum trap structure by a plurality of barrier layers and a plurality of trap layer, wherein in barrier layer doped p type impurity to increase the hole number, and the barrier layer doping content the closer to the N-shaped bond course is lower, barrier layer doping content the closer to the p-type bond course is higher, to form the barrier layer structure of tool gradual change type doping content.More detailed and complete for the narration that makes the present embodiment, can coordinate the accompanying drawing of Fig. 1, with reference to following description.
Fig. 1 discloses the first embodiment of the epitaxial structure that meets light-emitting component of the present invention, and epitaxial structure 1 comprises that growth substrate 10, resilient coating 20 are formed on growth substrate 10, N-shaped bond course (cladding layer) 30 is formed on resilient coating 20, active layer (active layer) 40 is formed on N-shaped bond course 30 and p-type bond course 50 is formed on active layer 40.The method that forms epitaxial structure 1 comprises provides growth substrate 10; Then, on growth substrate 10 with Metalorganic chemical vapor deposition method (Metal-Organic Chemical Vapor Deposition) epitaxial growth resilient coating 20 under the first growth condition, after the growth that completes resilient coating 20, growth N-shaped bond course 30 under the second growth condition.In completing N-shaped bond course 30, grow up, growth active layer 40 under the 3rd growth condition, and under the 4th growth condition growth p-type bond course 50 to form the epitaxial structure of light-emitting component.Wherein, the lattice constant of resilient coating 20, between N-shaped bond course 30 and growth substrate 10, can improve the extension quality and reduce lattice defect.In definition of the present invention, " growth condition " word is to comprise that at least one processing parameter setting value is selected from temperature, pressure and gas flow, reaches the group that other processing parameter setting values form.The active layer 40 of wherein growing up under one of the 3rd growth condition is by a plurality of barrier layer 40A
1, 40A
2,,, 40A
n(n>1) and a plurality of trap layer 40B are staggeredly stacked and the multiple quantum trap structure that forms.In the present embodiment, barrier layer 40A wherein
1, 40A
2,,, 40A
ngallium nitride (GaN), consisted of, trap layer 40B is by InGaN (In
xga
1-xn, 0<x<1) institute forms.Adulterate the p-type impurity of magnesium (Mg) for example to increase the hole number in barrier layer, and the barrier layer doping content the closer to N-shaped bond course 30 is lower, barrier layer doping content the closer to p-type bond course 50 is higher, to form the barrier layer structure of tool gradual change type doping content, its doping content scope is between being 1 * 10
16～5 * 10
17/ cm
3between.This kind of multiple quantum trap structure at least can reach following effect: 1. the barrier layer doping content the closer to the p-type bond course is higher, can increase the efficiency that quantum well is injected in hole.2. the barrier layer doping content the closer to the N-shaped bond course is lower, for electronics, can cause the effect stopped, avoids a large amount of electronics overflows to the p side.
Second embodiment of the invention discloses about a kind of light-emitting component that comprises active layer.Its active layer is to be staggeredly stacked and the multiple quantum trap structure that forms by a plurality of barrier layers and a plurality of trap layer, and wherein every one deck barrier layer comprises barrier layer at least one time, has the light-emitting component of inferior barrier layer with formation.More detailed and complete for the narration that makes the present embodiment, can coordinate the accompanying drawing of Fig. 2, with reference to following description.Fig. 2 discloses the second embodiment of the epitaxial structure that meets light-emitting component of the present invention, and epitaxial structure 2 compares with epitaxial structure 1, and except active layer (active layer) 40 structure differences, all the other each layer of structures are identical with growth condition.The active layer 40 of wherein growing up under the 3rd two growth conditions is to be staggeredly stacked and the multiple quantum trap structure that forms by a plurality of barrier layer 40A and a plurality of trap layer 40B, and wherein every one deck barrier layer 40A comprises barrier layer 40a at least one time.In the present embodiment, the material that forms barrier layer 40A is InGaN (InGa N), and the material that forms time barrier layer 40a is gallium nitride (Ga N), and the material that forms the trap layer is InGaN (In
xga
1-xn, 0<x<1).Design this kind of multiple quantum trap structure and can reduce the band curvature phenomenon that between barrier layer and trap layer, polarization charge causes, and can increase the joint efficiency of electron hole in quantum well.
Third embodiment of the invention discloses about a kind of light-emitting component that comprises active layer.Its active layer is to be staggeredly stacked and the multiple quantum trap structure that forms by a plurality of barrier layers and a plurality of trap layer, wherein every one deck barrier layer comprises barrier layer at least one time, and adulterate the p-type impurity of magnesium for example to increase the hole number in inferior barrier layer, form the light-emitting component with doped p type impurity time barrier layer.More detailed and complete for the narration that makes the present embodiment, can coordinate the accompanying drawing of Fig. 3, with reference to following description.Fig. 3 discloses the 3rd embodiment of the epitaxial structure that meets light-emitting component of the present invention, and epitaxial structure 3 compares with epitaxial structure 2, and except active layer (active layer) 40 structure differences, all the other each layer of structures are identical with growth condition.The active layer 40 of wherein growing up under the 3rd three growth conditions is to be staggeredly stacked and the multiple quantum trap structure that forms by a plurality of barrier layer 40A and a plurality of trap layer 40B, and wherein every one deck barrier layer 40A comprises barrier layer 40a at least one time
1, 40a
2,,, 40a
n(n>1).In the present embodiment, the material that forms barrier layer 40A is InGaN (InGaN), forms time barrier layer 40a
1, 40a
2,,, 40a
nmaterial be gallium nitride (GaN), and for example p-type impurity of magnesium adulterates, wherein doping content can be identical or lower the closer to the inferior barrier layer doping content of N-shaped bond course 30, inferior barrier layer doping content the closer to p-type bond course 50 is higher, to form the inferior barrier layer structure of tool gradual change type doping content, its doping content scope is between being 1 * 10
16～5 * 10
17/ cm
3between.The material that forms the trap layer is InGaN (In
xga
1-xn, 0<x<1).Design this kind of multiple quantum trap structure and can reduce the band curvature phenomenon that between barrier layer and trap layer, polarization charge causes, and can increase the joint efficiency of electron hole in quantum well.
Above-mentioned all embodiment, wherein, the material of described resilient coating, N-shaped bond course, p-type bond course and active layer comprises the III-V compounds of group, for example the material of gallium nitride series or gallium phosphide series.Described growth substrate is for example to comprise that at least one material is selected from the group that sapphire, carborundum, gallium nitride and aluminium nitride form.Described resilient coating, N-shaped bond course and p-type bond course can be the single or multiple lift structure, are for example superlattice structure.In addition, described epitaxial light emission structure of the present invention is not limited to grow up on described growth substrate with pattern of growth, and other generation types for example directly engage with juncture or are engaged to heat conduction or electrically-conductive backing plate also belongs to scope of the present invention by medium.
Although the present invention discloses as above with preferred embodiment; so it is not in order to limit the present invention; any persons of ordinary skill in the technical field of the present invention; without departing from the spirit and scope of the present invention; when being used for a variety of modifications and variations, so protection scope of the present invention defines and is as the criterion when looking appended claim.
Claims (10)
1. a light-emitting component at least comprises:
The first electrical semiconductor layer;
The second electrical semiconductor layer; And
Active layer, between this first electrical semiconductor layer and this second electrical semiconductor layer, and this active layer comprises by a plurality of barrier layers and a plurality of trap layer and being staggeredly stacked and the multiple quantum trap structure that forms, wherein the plurality of barrier layer comprises respectively barrier layer at least one time.
2. light-emitting component as claimed in claim 1, wherein this first electrical semiconductor layer is N-shaped, this second electrical semiconductor layer is p-type.
3. light-emitting component as claimed in claim 1, wherein this at least one barrier layer is comprised of gallium nitride, and the plurality of barrier layer is comprised of InGaN, and the plurality of trap layer is by InGaN In
xga
1-xn forms, 0<x<1.
4. light-emitting component as claimed in claim 1, wherein this barrier layer doped p type impurity.
5. light-emitting component as claimed in claim 1, wherein the doping content of each this barrier layer in the plurality of barrier layer can be identical.
6. light-emitting component as claimed in claim 1, wherein the impurity concentration of this barrier layer is lower the closer to this first electrical semiconductor layer concentration, higher the closer to this second electrical semiconductor layer concentration.
7. light-emitting component as claimed in claim 1, the wherein doping content of respectively this barrier layer in the plurality of barrier layer gradual change between this first electrical semiconductor and this second electrical semiconductor layer.
8. the manufacture method of a light-emitting component, its step comprises:
The first electrical semiconductor layer is provided;
The growth active layer is on this first electrical semiconductor layer; And
Grow up the second electrical semiconductor layer on this active layer;
Wherein this active layer comprises stacking a plurality of barrier layers interlaced with each other and a plurality of trap layer, and the plurality of barrier layer comprises respectively barrier layer at least one time.
9. manufacture method as claimed in claim 8, wherein the doping content of respectively this barrier layer in the plurality of barrier layer can be identical.
10. manufacture method as claimed in claim 8, the wherein doping content of respectively this barrier layer in the plurality of barrier layer gradual change between this first electrical semiconductor and this second electrical semiconductor layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310309950.8A CN103441196B (en) | 2009-12-21 | 2009-12-21 | Light-emitting component and its manufacture method |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910260838 CN102104094B (en) | 2009-12-21 | 2009-12-21 | Light-emitting component and manufacturing method thereof |
| CN201310309950.8A CN103441196B (en) | 2009-12-21 | 2009-12-21 | Light-emitting component and its manufacture method |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200910260838 Division CN102104094B (en) | 2009-12-21 | 2009-12-21 | Light-emitting component and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103441196A true CN103441196A (en) | 2013-12-11 |
| CN103441196B CN103441196B (en) | 2017-03-01 |
Family
ID=44156735
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310309950.8A Active CN103441196B (en) | 2009-12-21 | 2009-12-21 | Light-emitting component and its manufacture method |
| CN 200910260838 Active CN102104094B (en) | 2009-12-21 | 2009-12-21 | Light-emitting component and manufacturing method thereof |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200910260838 Active CN102104094B (en) | 2009-12-21 | 2009-12-21 | Light-emitting component and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN103441196B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112436078A (en) * | 2020-10-31 | 2021-03-02 | 扬州大学 | GaN-based LED epitaxial structure capable of improving luminous efficiency |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102299223A (en) * | 2011-09-19 | 2011-12-28 | 厦门乾照光电股份有限公司 | Epitaxial structure of light-emitting diode and manufacturing method thereof |
| CN103545406A (en) * | 2012-07-16 | 2014-01-29 | 展晶科技(深圳)有限公司 | Multi-quantum well structure and light-emitting diode |
| CN104253181A (en) * | 2013-06-26 | 2014-12-31 | 南通同方半导体有限公司 | LED (Light Emitting Diode) epitaxy structure with multiple barrier layers |
| CN104157760A (en) * | 2014-08-06 | 2014-11-19 | 湘能华磊光电股份有限公司 | Epitaxial wafer of LED (Light Emitting Diode) and manufacturing method thereof |
| CN104266143B (en) * | 2014-09-15 | 2015-10-28 | 潘凡峰 | The anti-explosion LED electricity-saving lamp used under a kind of adverse circumstances |
| CN111223764B (en) * | 2020-03-18 | 2023-06-30 | 湘能华磊光电股份有限公司 | LED epitaxial growth method for improving radiation recombination efficiency |
| CN113257962B (en) * | 2021-05-11 | 2022-06-24 | 东南大学 | Ultraviolet light-emitting diode with p-i-n type multi-quantum well structure |
| WO2023082092A1 (en) * | 2021-11-10 | 2023-05-19 | 重庆康佳光电技术研究院有限公司 | Semiconductor epitaxial structure, application thereof, and manufacturing method therefor |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6586762B2 (en) * | 2000-07-07 | 2003-07-01 | Nichia Corporation | Nitride semiconductor device with improved lifetime and high output power |
| TWI234915B (en) * | 2002-11-18 | 2005-06-21 | Pioneer Corp | Semiconductor light-emitting element and method of manufacturing the same |
| KR100764433B1 (en) * | 2006-04-06 | 2007-10-05 | 삼성전기주식회사 | Nitride semiconductor device |
-
2009
- 2009-12-21 CN CN201310309950.8A patent/CN103441196B/en active Active
- 2009-12-21 CN CN 200910260838 patent/CN102104094B/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112436078A (en) * | 2020-10-31 | 2021-03-02 | 扬州大学 | GaN-based LED epitaxial structure capable of improving luminous efficiency |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102104094B (en) | 2013-08-21 |
| CN102104094A (en) | 2011-06-22 |
| CN103441196B (en) | 2017-03-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102104094B (en) | Light-emitting component and manufacturing method thereof | |
| JP5048076B2 (en) | Method of manufacturing light emitting diode including current spreading layer | |
| US9257599B2 (en) | Semiconductor light emitting device including hole injection layer | |
| CN106057989B (en) | A kind of production method of the epitaxial wafer of GaN base light emitting | |
| US8294178B2 (en) | Light emitting device using compound semiconductor | |
| KR100604406B1 (en) | Nitride semiconductor device | |
| CN104919604A (en) | Nitride semiconductor light-emitting element | |
| JP2017135426A (en) | Nitride semiconductor structure and semiconductor light-emitting device | |
| CN104810442A (en) | Light emitting diode epitaxial wafer and growth method thereof | |
| WO2016072150A1 (en) | Nitride semiconductor light-emitting element | |
| KR20050021237A (en) | Light-emitting device and manufacturing method thereof | |
| US7902562B2 (en) | Light emitting diode device that includes a three dimensional cloud structure and manufacturing method thereof | |
| CN103489973A (en) | Semiconductor light emitting structure | |
| CN108550670B (en) | Nitride semiconductor structure and semiconductor light emitting element | |
| KR101903361B1 (en) | Nitride semiconductor light emitting device and manufacturing method thereof | |
| TWI384657B (en) | Nitirde semiconductor light emitting diode device | |
| US9105763B2 (en) | Light emitting diode chip and manufacturing method thereof | |
| EP2548233B1 (en) | Light-emitting device with heterophase boundaries | |
| KR101744931B1 (en) | Semiconductor Light Emitting Device and Manufacturing Method Thereof | |
| CN205900578U (en) | Light emitting diode epitaxial wafer | |
| KR20120079730A (en) | Light emitting device and method for manufacturing the same | |
| CN217933825U (en) | Semiconductor epitaxial structure and LED chip | |
| KR101198357B1 (en) | Light emission Diode and Manufacturing Method of the same | |
| TWI420696B (en) | Light-emitting device and the manufacturing method thereof | |
| KR20120138050A (en) | Nitride based light emitting device using buffer layer with super lattice structure and method of manufacturing the nitride based light emitting device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |