CN113257962B - Ultraviolet light-emitting diode with p-i-n type multi-quantum well structure - Google Patents
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- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 230000000903 blocking effect Effects 0.000 claims description 12
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
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- 150000002902 organometallic compounds Chemical class 0.000 description 2
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
- H01L33/0012—Devices characterised by their operation having p-n or hi-lo junctions p-i-n devices
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
The invention discloses an ultraviolet light-emitting diode with a p-i-n type multi-quantum well structure, which is sequentially provided with a substrate, an AlN buffer layer, an n-type AlGaN layer, a p-i-n type multi-quantum well active region, an electron barrier layer, a p-type AlGaN layer, a p-type GaN ohmic contact layer, an n-type electrode arranged on the n-type AlGaN layer and a p-type electrode arranged on the p-type GaN ohmic contact layer from bottom to top. The ultraviolet light-emitting diode with the p-i-n type multi-quantum well structure can improve carrier concentration and injection efficiency, can form an electric field with the direction opposite to that of an original built-in electric field by utilizing the concentration difference of carriers in adjacent areas with different doping concentrations, can weaken the original built-in electric field between a p-type area and an n-type area, and reduce the quantum confinement Stark effect caused by the built-in polarized electric field, so that the radiation recombination efficiency of electrons and holes is improved, and the luminous power of the ultraviolet light-emitting diode is enhanced.
Description
Technical Field
The invention relates to the field of manufacturing of semiconductor photoelectron materials and devices, in particular to an ultraviolet light-emitting diode with a p-i-n type multi-quantum well structure.
Background
The AlGaN-based ultraviolet light emitting diode (UV-LED) has the advantages of low energy consumption, environmental friendliness, adjustable light emitting wavelength and the like, and can be widely applied to the fields of printing ink curing, high-density data information storage, sterilization, disinfection, medical care, water and air purification and the like. Due to the lack of GaN or AlN native substrates, AlGaN-based UV-LEDs are typically grown using foreign substrates such as sapphire, silicon carbide, silicon, and the like. However, due to the large lattice mismatch with the hetero-substrate, the A1 GaN-based UV-LED structure epitaxially grown on the hetero-substrate such as polar c-plane sapphire has strong spontaneous polarization and piezoelectric polarization effects, so that charges are accumulated at the hetero-interface to form a polarization electric field along the growth direction, which is a phenomenon called Quantum Confinement Stark Effect (QCSE). The polarized electric field can cause the conduction band and the valence band edge of a quantum well in the UV-LED to incline, so that the wave functions of electrons and holes are separated in space, the radiation recombination probability of the electrons and the holes is reduced, and the internal quantum efficiency or the luminous efficiency of the UV-LED device is seriously influenced.
In addition, when the Al composition of the p-type AlGaN layer of the AlGaN-based UV-LED increases, the activation efficiency of p-type impurities (such as Mg) becomes low, so that the number of holes injected into the active region decreases, eventually suppressing the light output capability of the UV-LED. In order to alleviate or inhibit the adverse effects of the above two factors on the luminous efficiency and intensity of the UV-LED, the development of new UV-LED structures and their preparation schemes is urgently needed.
Disclosure of Invention
The invention aims to: aiming at the prior art, the ultraviolet light-emitting diode with the p-i-n type multi-quantum well structure is provided, so that the adverse effect of quantum confinement Stark effect is effectively inhibited, and the internal quantum efficiency and the light output power of the UV-LED are improved.
The technical scheme is as follows: an ultraviolet light emitting diode having a p-i-n type multiple quantum well structure, comprising: the GaN-based solar cell comprises a substrate 101, an AlN buffer layer 102, an n-type AlGaN layer 103, a p-i-n type multi-quantum well active region 104, an electron blocking layer 105, a p-type AlGaN layer 106, a p-type GaN ohmic contact layer 107, an n-type electrode 108 arranged on the n-type AlGaN layer 103 and a p-type electrode 109 arranged on the p-type GaN ohmic contact layer 107 which are arranged in sequence from bottom to top.
Further, each quantum barrier in the p-i-n type multiple quantum well active region 104 is sequentially an n-type doped quantum barrier with different doping concentrations, an undoped i-type quantum barrier and a p-type doped quantum barrier with different doping concentrations from bottom to top, that is, the quantum barriers are doped with n according to doping types from bottom to top1-n2-…-nx-i-p1-p2-…-pyA structural arrangement, wherein x and y are the number of n-type doped quantum barriers and p-type doped quantum barriers, respectively; the electron concentration in the n-type doped quantum barrier is reduced from bottom to top along the growth direction, the hole concentration in the p-type doped quantum barrier is increased from bottom to top along the growth direction, and the electron concentration satisfies c (n)1)>c(n2)>c(…)>c(nx) Hole concentration satisfies c (p)1)<c(p2)<c(…)<c(py) The relational expression of (1); and undoped quantum wells are arranged between the quantum barriers.
Further, the number of quantum barriers in the p-i-n type multiple quantum well active region 104 is more than or equal to 6; al component of quantum barrierThe thickness of the quantum barrier is 5-10 nm; wherein the electron concentration range in the n-type doped quantum barrier is 1 × 1017～1×1019cm-3But always less than the electron concentration in the n-type AlGaN layer 103; and the concentration range of holes in the p-type doped quantum barrier is 1 × 1017～1×1019cm-3But always less than the hole concentration in the uppermost p-type doped quantum barrier; the thickness of the uppermost p-type doped quantum barrier is 5-20 nm, and the concentration range of the holes is 4 multiplied by 1017～2×1019cm-3But always lower than the hole concentration in the electron blocking layer 105; the thickness of the undoped quantum well is 2-4 nm.
Further, the electron concentration in the n-type AlGaN layer 103 ranges from 5 × 1017～2×1019cm-3The thickness is 200-5000 nm.
Further, the Al composition of the electron blocking layer 105 is higher than that of the quantum barrier in the p-i-n type multiple quantum well active region 104, and p-type doping is adopted, and the hole concentration range is 5 × 1017～3×1019cm-3But is always higher than the hole concentration in the uppermost p-type doped quantum barrier of the p-i-n type multiple quantum well active region 104, and has a thickness of 10-50 nm.
Further, the AlN buffer layer 102 is grown on a sapphire, silicon carbide, or silicon substrate by using a metal organic compound chemical vapor deposition or molecular beam epitaxy method, and has a thickness of 10 to 3000 nm.
Further, the hole concentration in the p-type AlGaN layer 106 ranges from 5 × 1017～3×1019cm-3The thickness is 50-500 nm; the p-type GaN ohmic contact layer 107 is heavily doped with Mg with a hole concentration in the range of 1 × 1018～4×1019cm-3The thickness is 5 to 200 nm.
Has the advantages that: compared with the UV-LED with the undoped quantum well structure prepared by the prior art as shown in figure 3, the UV-LED with the p-i-n type multi-quantum well structure provided by the invention has the following advantages:
by utilizing the activation of the n-type doped impurity Si and the p-type doped impurity Mg in the p-i-n type multi-quantum well active region 104, the distribution of electrons and holes in the active region can be optimized, and more carriers (electrons and holes) are introduced into the active region, so that the carrier recombination probability in the quantum well of the active region is improved; meanwhile, compared with the existing UV-LED with undoped quantum well structure, after doping a proper amount of Si and Mg impurities in the n-type doped quantum barrier and the p-type doped quantum barrier layer with gradually changing concentrations and activating them to generate electrons and holes, respectively, a carrier concentration difference or a carrier concentration gradient can be established between the adjacent n-type doped quantum barriers, between the n-type and p-type doped quantum barriers and the undoped quantum barrier, between the p-type doped quantum barriers, between the n-type AlGaN layer 103 and the n-type doped quantum barrier 10401 having high electron concentration, between the uppermost p-type doped quantum barrier 10406 and the electron blocking layer 105 to generate an electric field opposite to the original built-in electric field direction, thereby weakening the built-in polarization electric field between the n-type region and the p-type region, as shown in fig. 4, so that the carriers can shield part of polarization charges after being injected into the quantum well region, the inclination degree of an energy band in the multi-quantum well active region is reduced, the coincidence degree of wave functions of electrons and holes is increased, and the radiation recombination of the electrons and the holes is facilitated, so that more photons are generated, and the internal quantum efficiency and the optical output power of the UV-LED are improved.
Drawings
Fig. 1 is a schematic diagram of a UV-LED of the present invention having a p-i-n type multiple quantum well structure, in which: the solar cell comprises a substrate 101, an AlN buffer layer 102, an n-type AlGaN layer 103, a p-i-n type multi-quantum well active region 104, an electron blocking layer 105, a p-type AlGaN layer 106, a p-type GaN ohmic contact layer 107, an n-type electrode 108 and a p-type electrode 109;
fig. 2 is a schematic diagram of a p-i-n type multiple quantum well active region 104 of the present invention, wherein: a high electron concentration n-type doped quantum barrier 10401, a low electron concentration n-type doped quantum barrier 10402, an undoped quantum barrier 10403, a low hole concentration p-type doped quantum barrier 10404, a high hole concentration p-type doped quantum barrier 10405, an endmost p-type doped quantum barrier 10406, 5 undoped quantum wells 104011, 104021, 104031, 104041, 104051;
fig. 3 is a schematic diagram of a multi-quantum well active region of a UV-LED with an undoped multi-quantum well structure prepared in the prior art, wherein: undoped quantum barriers 20401, 20402, 20403, 20404, 20405, the endmost undoped quantum barrier 20406, 5 undoped quantum wells 204011, 204021, 204031, 204041, 204051;
fig. 4 is a schematic diagram of the UV-LED having a p-i-n type multiple quantum well structure of the present invention in which the existing built-in electric field is weakened.
Detailed Description
The invention is further explained below with reference to the drawings.
As shown in fig. 1, the UV-LED having a p-i-n type multiple quantum well structure of the present invention includes a substrate 101, an AlN buffer layer 102, an n-type AlGaN layer 103, a p-i-n type multiple quantum well active region 104, an electron blocking layer 105, a p-type AlGaN layer 106, a p-type GaN ohmic contact layer 107, an n-type electrode 108 provided on the n-type AlGaN layer 103, and a p-type electrode 109 provided on the p-type GaN ohmic contact layer 107, which are arranged in this order from bottom to top.
Each quantum barrier in the p-i-n type multi-quantum well active region 104 is sequentially an n-type doped quantum barrier with different doping concentrations, an undoped i-type quantum barrier and a p-type doped quantum barrier with different doping concentrations from bottom to top, that is, the quantum barriers are doped with n according to doping types from bottom to top1-n2-…-nx-i-p1-p2-…-pyA structural arrangement, wherein x and y are the number of n-type doped quantum barriers and p-type doped quantum barriers, respectively; the electron concentration in the n-type doped quantum barrier is reduced from bottom to top along the growth direction, the hole concentration in the p-type doped quantum barrier is increased from bottom to top along the growth direction, and the electron concentration satisfies c (n)1)>c(n2)>c(…)>c(nx) Hole concentration satisfies c (p)1)<c(p2)<c(…)<c(py) The relational expression of (1); and undoped quantum wells are arranged between the quantum barriers.
The number of quantum barriers in the p-i-n type multi-quantum well active region 104 is more than or equal to 6; the Al component of the quantum barrier is always higher than that of the quantum well, and the thickness of the quantum barrier is 5-10 nm; wherein the electron concentration range in the n-type doped quantum barrier is 1 × 1017～1×1019cm-3But always smaller than the n-type AlGaN layer 103 electron concentration; and the concentration range of holes in the p-type doped quantum barrier is 1 × 1017～1×1019cm-3But always less than the hole concentration in the uppermost p-type doped quantum barrier; the thickness of the uppermost p-type doped quantum barrier is 5-20 nm, and the concentration range of the holes is 4 multiplied by 1017～2×1019cm-3But always lower than the hole concentration in the electron blocking layer 105; the thickness of the undoped quantum well is 2-4 nm.
The electron concentration in the n-type AlGaN layer 103 ranges from 5X 1017～2×1019cm-3The thickness is 200-5000 nm. The Al component of the electron blocking layer 105 is higher than that of the quantum barrier in the p-i-n type multiple quantum well active region 104, p type doping is adopted, and the concentration range of holes is 5 multiplied by 1017～3×1019cm-3But is always higher than the hole concentration in the uppermost p-type doped quantum barrier of the p-i-n type multiple quantum well active region 104, and has a thickness of 10-50 nm. The AlN buffer layer 102 is grown on a sapphire, silicon carbide or silicon substrate by using a metal organic compound chemical vapor deposition or molecular beam epitaxy method, and has a thickness of 10-3000 nm. The hole concentration in the p-type AlGaN layer 106 ranges from 5X 1017～3×1019cm-3The thickness is 50-500 nm; the p-type GaN ohmic contact layer 107 is heavily doped with Mg with a hole concentration in the range of 1 × 1018～4×1019cm-3The thickness is 5 to 200 nm.
In this embodiment, as shown in fig. 2, the p-i-n type multiple quantum well active region 104 includes a high electron concentration n type doped quantum barrier 10401, a low electron concentration n type doped quantum barrier 10402, an undoped quantum barrier 10403, a low hole concentration p type doped quantum barrier 10404, a high hole concentration p type doped quantum barrier 10405, a topmost p type doped quantum barrier 10406, and 5 undoped quantum wells 104011, 104021, 104031, 104041, 104051 between the quantum barriers.
Wherein the high electron concentration n-type doped quantum barrier 10401, the low electron concentration n-type doped quantum barrier 10402, the undoped quantum barrier 10403, the low hole concentration p-type doped quantum barrier 10404 and the high hole concentration p-type doped quantum barrier 10405 are all made of Al0.55Ga0.45N with a thickness of 8 nm; 5 undoped quantum wells are all made of Al0.4Ga0.6N, the thickness of which is 3 nm; the uppermost p-type doped quantum barrier 10406 is still set to Al0.55Ga0.45N, the thickness of which is 8 nm. The n-type quantum barrier is doped with Si, and the p-type quantum barrier is doped with Mg; the electron concentration of the high electron concentration n-type doped quantum barrier 10401 is 3 × 1018cm-3The electron concentration of the low electron concentration n-type doped quantum barrier 10402 is 1.5 × 1018cm-3The low hole concentration p-type doped quantum barrier 10404 has a hole concentration of 3 × 1017cm-3The hole concentration of the high-hole-concentration p-type doped quantum barrier 10405 is 6 × 1017cm-3The hole concentration of the uppermost p-type doped quantum barrier 10406 is 1 × 1018cm-3。
The substrate 101 is a c-plane sapphire substrate, and an AlN buffer layer 102 with a thickness of 50nm is epitaxially grown thereon. The n-type AlGaN layer 103 is Si-doped n-Al0.55Ga0.45N layer with thickness of 2000nm and electron concentration of 6X 1018cm-3. The electron blocking layer 105 is Mg-doped p-Al0.65Ga0.35N layer with thickness of 10nm and hole concentration of 2 × 1018cm-3. The p-type AlGaN layer 106 is Mg-doped p-Al0.5Ga0.5N layer with thickness of 50nm and hole concentration of 3 × 1018cm-3. The p-type GaN ohmic contact layer 107 is a Mg-doped p-GaN layer with a thickness of 150nm and a hole concentration of 5 × 1018cm-3. The n-type electrode 108 is a Ti/Au ohmic contact electrode, and the p-type electrode 109 is a Ni/Au ohmic contact electrode.
Fig. 4 is a schematic diagram of the UV-LED with p-i-n type multiple quantum well structure provided in this embodiment to weaken the built-in electric field. Usually, a built-in polarization electric field pointing from an n-type region to a p-type region exists in the AlGaN-based UV-LED, and the existence of the electric field can cause quantum confinement Stark effect, so that the energy band of a multiple quantum well in an active region is inclined, the wave functions of electrons and holes are separated in space, the radiation recombination probability of the electrons and the holes is reduced, and meanwhile, the injection of the electrons and the holes into the active region and the radiation recombination are not facilitated. If the invention is adoptedThe p-i-n type multiple quantum well active region structure of (1) is characterized in that after appropriate amounts of Si and Mg impurities are doped in n-type doped quantum barriers 10401 and 10402 and p-type doped quantum barriers 10404 and 10405 at two ends of a multiple quantum well in a concentration gradient manner respectively to enable the impurities to be activated to generate electrons and holes, a carrier concentration difference or a carrier concentration gradient is formed inside an UV-LED active region, so that an electric field E opposite to the original built-in electric field direction is formed between the adjacent n-type doped quantum barriers 10401 and 10402, between the p-type doped quantum barriers 10404 and 10405, between the n-type doped quantum barrier and the p-type doped quantum barrier 10403, between the n-type AlGaN layer 103 and the n-type doped quantum barrier 10401 with high electron concentration, and between the p-type doped quantum barrier 10406 at the tail end and the electron barrier 1051、E2、E3. The electric fields weaken or even completely offset the original built-in electric field, so that the negative influence of quantum-limited stark effect can be effectively eliminated, the inclination degree of quantum well energy bands is reduced, the radiation recombination probability of electrons and holes is increased, and the injection of the electrons and the holes into an active region is promoted, thereby increasing the concentration of carriers in 5 undoped quantum wells 104011, 104021, 104031, 104041 and 104051 in the active region, further increasing the radiation recombination probability of the electrons and the holes, and improving the internal quantum efficiency and the luminous power of the UV-LED.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and amendments can be made without departing from the principle of the present invention, and these modifications and amendments should also be considered as the protection scope of the present invention.
Claims (6)
1. An ultraviolet light emitting diode having a p-i-n type multiple quantum well structure, comprising: the GaN-based light-emitting diode comprises a substrate (101), an AlN buffer layer (102), an n-type AlGaN layer (103), a p-i-n type multi-quantum well active region (104), an electron blocking layer (105), a p-type AlGaN layer (106), a p-type GaN ohmic contact layer (107), an n-type electrode (108) arranged on the n-type AlGaN layer (103) and a p-type electrode (109) arranged on the p-type GaN ohmic contact layer (107), which are arranged in sequence from bottom to top;
each of the p-i-n type multiple quantum well active regions (104)The quantum barrier comprises an n-type doped quantum barrier, an undoped i-type quantum barrier and a p-type doped quantum barrier with different doping concentrations from bottom to top in sequence, namely the quantum barrier is doped with n according to the doping type from bottom to top1-n2-…-nx-i-p1-p2-…-pyStructural arrangement, wherein x and y are the number of n-type doped quantum barriers and p-type doped quantum barriers, respectively; the electron concentration in the n-type doped quantum barrier is reduced from bottom to top along the growth direction, the hole concentration in the p-type doped quantum barrier is increased from bottom to top along the growth direction, and the electron concentration satisfies c (n)1)>c(n2)>c(…)>c(nx) Hole concentration satisfies c (p)1)<c(p2)<c(…)<c(py) The relational expression of (1); and undoped quantum wells are arranged between the quantum barriers.
2. The uv led having a p-i-n type multiple quantum well structure according to claim 1, wherein the number of quantum barriers in the p-i-n type multiple quantum well active region (104) is 6 or more; the Al component of the quantum barrier is always higher than that of the quantum well, and the thickness of the quantum barrier is 5-10 nm; wherein the electron concentration range in the n-type doped quantum barrier is 1 × 1017～1×1019cm-3But always less than the electron concentration in the n-type AlGaN layer (103); and the concentration range of holes in the p-type doped quantum barrier is 1 × 1017～1×1019cm-3But always less than the hole concentration in the uppermost p-type doped quantum barrier; the thickness of the uppermost p-type doped quantum barrier is 5-20 nm, and the concentration range of the holes is 4 multiplied by 1017～2×1019cm-3But always lower than the hole concentration in the electron blocking layer (105); the thickness of the undoped quantum well is 2-4 nm.
3. The uv led with p-i-n type multiple quantum well structure according to claim 2, wherein the electron concentration in the n-type AlGaN layer (103) is in the range of 5 x 1017～2×1019cm-3The thickness is 200-5000 nm.
4. The uv led having p-i-n type multiple quantum well structure according to any one of claims 1 to 3, wherein the Al composition of the electron blocking layer (105) is higher than the Al composition of the quantum barrier in the p-i-n type multiple quantum well active region (104), and p-type doping is used, and the hole concentration ranges from 5 x 1017～3×1019cm-3But is always higher than the hole concentration in the uppermost p-type doped quantum barrier of the p-i-n type multiple quantum well active region (104), and has a thickness of 10-50 nm.
5. The UV LED with p-i-n type multiple quantum well structure according to any of claims 1-3, wherein the AlN buffer layer (102) is grown on the sapphire, silicon carbide, silicon substrate by using MOCVD or MOE method, and has a thickness of 10-3000 nm.
6. The ultraviolet light-emitting diode having a p-i-n type multiple quantum well structure according to any one of claims 1 to 3, characterized in that the hole concentration in the p-type AlGaN layer (106) is in the range of 5 x 1017～3×1019cm-3The thickness is 50-500 nm; the p-type GaN ohmic contact layer (107) is heavily doped with Mg with a hole concentration in the range of 1 × 1018～4×1019cm-3The thickness is 5 to 200 nm.
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| CN104332544B (en) * | 2014-10-24 | 2017-04-19 | 西安神光皓瑞光电科技有限公司 | Epitaxial growth method for improving LED lighting efficiency |
| CN108682719A (en) * | 2018-04-24 | 2018-10-19 | 河源市众拓光电科技有限公司 | A kind of multiple quantum well layer, LED epitaxial structure and preparation method thereof |
| CN112366256B (en) * | 2020-09-30 | 2021-12-07 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and manufacturing method thereof |
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