CN104205367A - Near UV light emitting device - Google Patents
Near UV light emitting device Download PDFInfo
- Publication number
- CN104205367A CN104205367A CN201380017852.5A CN201380017852A CN104205367A CN 104205367 A CN104205367 A CN 104205367A CN 201380017852 A CN201380017852 A CN 201380017852A CN 104205367 A CN104205367 A CN 104205367A
- Authority
- CN
- China
- Prior art keywords
- layer
- light
- emitting device
- gan
- density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 claims description 99
- 239000012535 impurity Substances 0.000 claims description 28
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- 229910002704 AlGaN Inorganic materials 0.000 claims description 11
- 238000010276 construction Methods 0.000 claims description 5
- 229910002601 GaN Inorganic materials 0.000 description 72
- 239000000758 substrate Substances 0.000 description 13
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 11
- 230000031700 light absorption Effects 0.000 description 9
- 229910052738 indium Inorganic materials 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 230000004087 circulation Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- -1 InGaN Inorganic materials 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- 241000083879 Polyommatus icarus Species 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229940044658 gallium nitrate Drugs 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
- G02B5/3033—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state in the form of a thin sheet or foil, e.g. Polaroid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Led Devices (AREA)
Abstract
Disclosed herein is an ultraviolet (UV) light emitting device. The light emitting device includes an n-type contact layer including a GaN layer; a p-type contact layer including a GaN layer; and an active layer of a multi-quantum well structure disposed between the n-type contact layer and the p-type contact layer, the active area configured to emit near ultraviolet light at wavelengths of 365 nm to 309 nm.
Description
Technical field
The present invention relates to a kind of inorganic semiconductor light-emitting device, more specifically, relate to a kind of near ultraviolet light-emitting device.
Background technology
Conventionally, gallium nitride-based semiconductor has been widely used in the indigo plant/green light-emitting diode or laser diode as the light source of full color display, traffic lights, ordinary lamps and optical communication instrument.Particularly, InGaN (InGaN) compound semiconductor is because its narrow band gap has caused sizable concern.
This gallium nitride-based compound semiconductor is utilized in the various fields of the light source such as large scale natural daylight panel display apparatus, back light unit, traffic lights, indoor illumination light fitting, high intensity light source, high resolution output system and optical communication etc.For the light-emitting device of launching black light, be applied to forge distinguish, resin solidification and ultraviolet process, and can be combined to realize with fluorescent material versicolor visible ray.
Black light refers to that wave-length coverage is at the ultraviolet light of about 320nm to 390nm.Gallium nitride (GaN) has the band gap of about 3.42eV, and this is corresponding at the luminous energy at about 365nm place with wavelength.Therefore the light-emitting device that, comprises InGaN trap layer can be the black light of 365nm or longer (that is, wavelength is 365nm to 390nm) for emission wavelength according to indium content.
Because the light producing in trap layer is launched into outside through barrier layer and contact layer, therefore a plurality of semiconductor layers are positioned on the path on light propagation institute edge, and because these semiconductor layers cause occurring light absorption.Particularly, when the band gap of semiconductor layer is less than or is similar to the band gap of trap layer, there is serious light loss.Particularly, must control owing to occupying the N-shaped contact layer of most of thickness of light-emitting device and the light absorption that p-type contact layer causes.
Therefore,, in the near ultraviolet light-emitting device in association area, barrier layer, N-shaped contact layer and p-type contact layer and electronic barrier layer are formed by the AlGaN with the band gap larger than the band gap of InGaN.Yet, owing to being difficult to make the relative heavy back growth of AlGaN in the good crystallinity that guarantees AlGaN, therefore the electrical characteristics of near ultraviolet light-emitting device and optical characteristics be not as electrical characteristics and the optical characteristics of blue-light-emitting device, and near ultraviolet light-emitting device is with than the high sell at competitive of blueness/green emitting device.
Summary of the invention
[technical problem]
An aspect of of the present present invention is to improve light output and the light extraction efficiency of gallium nitrate based near ultraviolet light-emitting device.
Another aspect of the present invention is to provide a kind of near ultraviolet light-emitting device that can easily manufacture.
[technical scheme]
According to an aspect of the present invention, a kind of light-emitting device comprises: N-shaped contact layer, comprises GaN layer; P-type contact layer, comprises GaN layer; The active layer of multi-quantum pit structure, is arranged between N-shaped contact layer and p-type contact layer.The black light that the active region emission wavelength of multi-quantum pit structure is 365nm to 309nm.
The active region of multi-quantum pit structure can comprise barrier layer and trap layer.Barrier layer can be formed by AlGaN.Because barrier layer comprises In, therefore can alleviate the lattice mismatch between trap layer and barrier layer.
In addition, the first barrier layer of the most close N-shaped contact layer can comprise than the Al of other barrier layer many 10%～20%.The first barrier layer is formed by the lattice parameter AlInGaN lower than other barrier layer, thereby improves the light output of light-emitting device.At this, the metal element content that precentagewise represents be in gallium nitride based layer every kind of metal ingredient with respect to the component of the total amount of metal ingredient.The Al content of the gallium nitride based layer in other words, being represented by AlxInyGazN is by representing according to the % of 100 * x/ (x+y+z).
Trap layer can be formed and the emission wavelength black light that is 375nm to 390nm by InGaN, the barrier layer except the first barrier layer can by comprise 15% to 25% Al and 1% or the AlInGaN of In still less form.In addition, the first barrier layer can by comprise 30% to 40% Al and 1% or the AlInGaN of In still less form.
In certain embodiments, p-type contact layer can comprise lower high density doped layer, upper high density doped layer and be arranged in high density doped layer and lower high density doped layer between low-density doped layer.In addition, low-density doped layer is than upper high density doped layer and lower high density doping bed thickness.The relatively thick thickness of low-density doped layer can be for the light absorption that prevents from being caused by p-type contact layer.
In addition, N-shaped contact layer can comprise lower gallium nitride layer, upper gallium nitride layer and be arranged in gallium nitride layer and lower gallium nitride layer between the intermediate layer of sandwich construction.Be inserted into the intermediate layer with sandwich construction in the mid portion of N-shaped contact layer and can improve the crystalline quality of the epitaxial loayer on N-shaped contact layer.Particularly, the intermediate layer of sandwich construction can have AlInN and GaN replaces stacking structure each other.
Light-emitting device can also comprise: superlattice layer, between N-shaped contact layer and active region; Electron injecting layer, between superlattice layer and active region.Here, electron injecting layer has the N-shaped impurity doping density than superlattice floor height.Electron injecting layer is injected in active region electronics efficiently, thereby improves illumination effect.
In a certain embodiment, superlattice layer can have the structure of InGaN/InGaN repeatedly stacking, and electron injecting layer can be formed by GaN or InGaN.Here, each layer that InGaN/InGaN represents to form in the circulation layer of superlattice layer is formed by InGaN.Here, each layer in these layers is without the need for the In of same amount.
Unadulterated GaN layer can be arranged between N-shaped contact layer and superlattice layer.Unadulterated GaN layer can be in abutting connection with N-shaped contact layer, and can recover the crystalline quality that may worsen because of impurity of N-shaped contact layer.
In addition, light-emitting device can also comprise: low-density GaN layer, be arranged between unadulterated GaN layer and superlattice layer, and with than the low density of N-shaped contact layer doped with N-shaped impurity; High density GaN layer, is arranged between low-density GaN layer and superlattice layer, and with than the density of low-density GaN floor height doped with N-shaped impurity.
It being understood that describe, in general terms above and detailed description are below all exemplary with indicative, and be intended to provide the further explanation to the present invention for required protection.
[beneficial effect]
In near ultraviolet light-emitting device in association area, N-shaped contact layer is formed by AlGaN.Owing to occupying the contact layer of the most of thickness except substrate of nearly UV light-emitting device, by AlGaN, formed, therefore can prevent the light loss being caused by light absorption, but because the crystalline quality of the epitaxial loayer in nearly UV light-emitting device is low, be therefore difficult to improve light output or light extraction efficiency.According to embodiment, due to most of in N-shaped contact layer and p-type contact layer or all formed by gallium nitride, therefore can improve the crystalline quality of active region.Therefore, according to the light-emitting device of embodiment, can by the light loss that prevents from being caused by light absorption, improve light exports.
In addition,, because the first barrier layer comprises the aluminium amount more than other barrier layer, therefore according to the light-emitting device of embodiment, can there is the light output of further improvement.In addition, near ultraviolet light-emitting device can reduce the light loss being caused by light absorption by strengthening the crystalline quality of N-shaped contact layer and p-type contact layer.
Accompanying drawing explanation
Fig. 1 is according to the cutaway view of the light-emitting device of one exemplary embodiment of the present invention;
Fig. 2 is according to the cutaway view of the multi-quantum pit structure of the light-emitting device of exemplary embodiment of the present invention;
Fig. 3 describes the figure with the relation of the Al content of the first barrier layer of the multi-quantum pit structure of light-emitting device according to the light output of exemplary embodiment of the present invention; And
Fig. 4 describes the figure with the relation of the thickness of the first barrier layer of the multi-quantum pit structure of light-emitting device according to the light output of exemplary embodiment of the present invention.
Embodiment
Hereinafter, describe with reference to the accompanying drawings exemplary embodiment of the present invention in detail.The mode of explanation provides the following examples by way of example, with handle, to of the present invention, understand and offers those skilled in the art thoroughly.Therefore, the invention is not restricted to the following examples, and can realize in every way.It should be noted, accompanying drawing is not accurate ratio, and clear for what describe, some sizes of having exaggerated in the accompanying drawings such as width, length, thickness etc.In whole specification and accompanying drawing, same Reference numeral is indicated same element.
Fig. 1 is according to the cutaway view of the light-emitting device of one exemplary embodiment of the present invention, and Fig. 2 is according to the cutaway view of the multi-quantum pit structure of the light-emitting device of exemplary embodiment of the present invention.
With reference to Fig. 1, according to the light-emitting device of an embodiment, comprise N-shaped contact layer 27, active region 39 and p-type contact layer 43.In addition, light-emitting device can comprise substrate 21, nucleating layer 23, resilient coating 25, unadulterated GaN layer 29, low-density GaN layer 31, high density GaN layer 33, superlattice layer 35, electron injecting layer 37, electronic barrier layer 41 or delta doped layer 45.
Substrate 21 is the substrates for growing GaN based semiconductor, comprises sapphire substrates, carborundum (SiC) substrate or the spinel based end, but is not limited to this.For example, substrate 21 can be the sapphire substrates (PSS) of patterning.
Nucleating layer 23 can be formed by (Al, Ga) N under the temperature range of 400 ℃ to 600 ℃, with grown buffer layer 25 in substrate 21.Nucleating layer 23 is formed by GaN or AlN.Nucleating layer 23 can form the thickness of about 25nm.Substrate 21 is grown at relative high temperature with the resilient coating 25 between N-shaped contact layer 27, with the defect of alleviating such as dislocation, occurs.For example, resilient coating 25 can be formed by unadulterated GaN, and can have the thickness of about 1.5 μ m.
N-shaped contact layer 27 can be the semiconductor layer of Doped n-type impurity, the GaN based semiconductor of the Si that for example adulterates, and can form the thickness of about 3 μ m.N-shaped contact layer 27 can comprise GaN layer, and can have single or multiple lift structure.For example, as shown, N-shaped contact layer 27 can comprise lower GaN layer 27a, intermediate layer 27b and upper GaN layer 27c.Here, intermediate layer 27b can be formed by AlInN, or can have wherein AlInN and GaN and carry out alternately stacking sandwich construction (comprising superlattice structure) with for example about 10 circulations.Lower GaN layer 27a and upper GaN layer 27c can form for example similar thickness of about 1.5 μ m.Intermediate layer 27b can form than lower GaN layer 27a and the little thickness of upper GaN layer 27c.For example, intermediate layer 27b can have the thickness of about 80nm.Compare with the situation that single GaN layer is grown continuously with the relative high thickness of about 3mm, intermediate layer 27b is inserted in the mid portion of N-shaped contact layer 27.
Like this, can improve the crystalline quality of epitaxial loayer (particularly, being formed on the active region 39 on N-shaped contact layer 27).The scope that is doped to the doping density of the Si in N-shaped contact layer 27 can be 2 * 10
18/ cm
3to 2 * 10
19/ cm
3, or be 1 * 10
18/ cm
3to 2 * 10
19/ cm
3.Particularly, lower GaN layer 27a and upper GaN layer 27c can be with high density doped with Si impurity, and intermediate layer 27b can with the Si impurity phase with upper GaN layer 27c with or lower density doped with Si impurity, or intermediate layer 27b can be not intended to the impurity doped with Si.Due to lower GaN layer 27a and upper GaN layer 27c with high density doped with Si impurity, therefore can reduce the resistance of N-shaped contact layer 27.The electrode of contact N-shaped contact layer 27 also can contact GaN layer 27c.
Unadulterated GaN layer 29 can be formed by the GaN doped with impurity not, can form the little thickness than upper GaN layer 27c.For example, unadulterated GaN layer 29 can have the thickness of 80nm to 300nm.Because N-shaped contact layer 27 is doped with N-shaped impurity, so N-shaped contact layer 27 has residual stress and low crystalline quality.Therefore,, when growing another epitaxial loayer on N-shaped contact layer 27, be difficult to the epitaxial loayer that growth has well-crystallized quality.Yet because unadulterated GaN layer 29 is not doped with any impurity, therefore unadulterated GaN layer 29 plays for recovering the effect of recovery layer of the crystalline quality of N-shaped contact layer 27.Therefore, unadulterated GaN layer 29 can directly be formed on N-shaped contact layer 27 with in abutting connection with N-shaped contact layer 27.In addition, because unadulterated GaN layer 29 has the resistivity higher than N-shaped contact layer 27, the electronics that is therefore incorporated into active layer 39 from N-shaped contact layer 27 can be dispersed in N-shaped contact layer 27 equably through before unadulterated GaN layer 29.
Low-density GaN layer 31 is arranged on unadulterated GaN layer 29, and has the N-shaped impurity doping density lower than N-shaped contact layer 27.For example, low-density GaN layer 31 can have 5 * 10
17/ cm
3to 5 * 10
18/ cm
3the Si doping density of scope, and can form than the little thickness of unadulterated GaN layer 29.For example, low-density GaN layer 31 can have the thickness of 50nm to 150nm.High density GaN layer 33 is arranged on low-density GaN layer 31, and has the N-shaped impurity doping density higher than low-density GaN layer 31.High density GaN layer 33 can have the Si doping density similar to the Si doping density of N-shaped contact layer 27.High density GaN layer 33 can have the thickness less than low-density GaN layer 31.For example, high density GaN layer 33 can have the thickness of about 30nm.
Can in chamber, come growing n-type contact layer 27, unadulterated GaN floor 29, low-density GaN floor 31 and high density GaN floor 33 continuously by metal source gas is fed to.The organo metallic material that comprises Al, Ga and In such as trimethyl aluminium (TMA), trimethyl gallium (TMD) and/or trimethyl indium (TME) is used as metal source gas.Silane SiH
4can be used as the source gas of Si.These layers can for example grown at first temperature of 1050 ℃ to 1150 ℃.
Superlattice layer 35 is arranged on high density GaN layer 33.Can by by have an InGaN layer of different component and the 2nd InGaN layer alternately stacking about 30 circulations form superlattice layer 35, wherein, each InGaN layer has the thickness of 20nm.The indium content of trap layer 39w in the indium content specific activity region 39 of the one InGaN layer and the 2nd InGaN layer is low.Superlattice layer 35 can be formed by the unadulterated layer that is not intended to any impurity of doping.Because superlattice layer 35 is formed by unadulterated layer, therefore can reduce the current leakage of light-emitting device.
Electron injecting layer 37 has the N-shaped impurity doping density higher than superlattice layer 35.In addition, electron injecting layer 37 can have the N-shaped impurity doping density substantially the same with N-shaped contact layer 27.For example, the scope of N-shaped impurity doping density can be 1 * 10
19/ cm
3to 5 * 10
19/ cm
3, or be 1 * 10
19/ cm
3to 3 * 10
19/ cm
3.Due to high density doping electron injecting layer 37, therefore can promote electronic injection in active region 39.Electron injecting layer 37 can form the thickness similar to high density doped layer 33 or the thickness less than high density doped layer 33.For example, electron injecting layer 37 can have the thickness of 20nm.In addition, electron injecting layer 37 can be grown at the pressure of about 300 holders and the temperature of about 820 ℃ to 850 ℃.
Active region 39 is arranged on electron injecting layer 37.Fig. 2 is the cutaway view of the amplification of active region 39.
With reference to Fig. 2, active region 39 has and comprises each other alternately stacking barrier layer 39b and the multi-quantum pit structure of trap layer 39w.Trap layer 39w have can transmitting boundary the component of the black light that is 365nm to 390nm.For example, trap layer 39w can be formed by for example InGaN or AlInGaN.Here, the In content of trap layer 39w is determined according to ultraviolet light wavelength.For example, the scope of the In content of trap layer 39w can be about 2% to 5% molar percentage (therefore, the scope of Ga content is about 95% to 98%).Run through this description, according to molar percentage, represent equally the content of the compound in various layers.Each trap layer in trap layer 39w can have approximately
extremely
thickness.Under the pressure of about 300 holders, the lower growth trap of the temperature that trap layer 39w can be high in the temperature of the trap layer than common blue LED (for example, 800 ℃ to 820 ℃) layer 39w.Like this, trap layer can have the crystalline quality of improvement.
Barrier layer 39b can be formed than the gallium nitride-based semiconductor with gap length of trap layer by band gap.For example, barrier layer can be formed by GaN, InGaN, AlGaN or AlInGaN.Particularly, because barrier layer 39b can be formed by AlInGaN, therefore, the barrier layer 39b that comprises In can be alleviated the lattice mismatch between trap layer 39w and barrier layer 39b.
In addition, barrier layer 39b can grow under than the slightly high growth temperature of the growth temperature of trap layer 39w.For example, under the pressure of about 300 holders, barrier layer 39b can grow at the temperature of about 820 ℃ to 850 ℃.
The most close electron injecting layer 37 in barrier layer 39b1,39b, 39bn or the first barrier layer 39b1 of N-shaped contact layer 27 have the Al content than other potential barrier floor height.For example, the first barrier layer 39b1 can comprise many Al of 10% to 20% than other barrier layer 39b.For example, when other barrier layer 39b, 39bn comprise about 20% Al, the first barrier layer 39b1 can comprise about Al of 30% to 40%.Barrier layer 39b1,39b, 39bn comprise about 1% or indium still less.Particularly, when trap layer 39b formed to launch the black light of 375nm to 390nm by InGaN, barrier layer 39b except the first barrier layer 39b1 and 39bn can by comprise 15% to 25% Al and about 1% or the AlInGaN of In still less form, the first barrier layer 39b can by comprise 30% to 40% Al and 1% or the AlInGaN of In still less form.
Conventionally, in light-emitting device, barrier layer forms and has identical component.Yet in the present embodiment, the first barrier layer 39b1 comprises many Al of 10% to 20% than other barrier layer 39b.Electron injecting layer 37 or N-shaped contact layer 27 are formed by GaN.The difference that can launch between the trap layer 39w of black light and the band gap of GaN is relative little.Therefore, the first barrier layer 39b1 forms has the large band gap than other barrier layer 39b, thereby charge carrier is limited in active region 39.Particularly, when using AlInGaN barrier layer, the translational speed in hole reduces significantly, thereby can improve the overflow probability of electronics.In this case, although can think, increase the thickness of electronic barrier layer 41 to prevent overflowing of electronics, the increase of the thickness of electronic barrier layer 41 restriction hole is injected in active region efficiently.
Therefore, the first barrier layer 39b1 forms has the band gap wider than other barrier layer (approximately 0.5eV or higher), effectively to prevent overflowing of electronics by reducing the translational speed of electronics.Yet, when the Al content of the first barrier layer 39b1 has improved about 20% or more, between the first barrier layer 39b1 and electron injecting layer 37, there will be lattice mismatch, and the lattice mismatch between the first barrier layer 39b1 and trap layer 39w can become seriously, thereby reduce the crystalline quality of active region 39.
The first barrier layer can have and the essentially identical thickness of other barrier layer except most end barrier layer, or it is (for example, about to have the thickness larger than other barrier layer except the first barrier layer
), wherein, the most close electronic barrier layer 41 of most end barrier layer or p-type contact layer 43.For example, the first barrier layer can have
extremely
thickness, particularly, can have approximately
thickness.
Active region 39 can be in abutting connection with electron injecting layer 37.The barrier layer of active region 39 and quantum well layer can be formed by unadulterated layer, to improve the crystalline quality of active layer, and the some parts of active region or all can be doped with impurity to reduce forward voltage.
Refer again to Fig. 1, p-type contact layer 43 can be arranged on active region 39, and electronic barrier layer 41 can be arranged between active region 39 and p-type contact layer 43.Electronic barrier layer 41 can be formed by AlGaN or AlInGaN, to alleviate the lattice mismatch between p-type contact layer and active region 39.Electronic barrier layer 41 can comprise 36% Al and 3% In.Electronic barrier layer 41 can be with 5 * 10
19/ cm
3to 2 * 10
20/ cm
3doping density doped with the p-type impurity of for example Mg.
P-type contact layer 43 can comprise lower high density doped layer 43a, low-density doped layer 43b and upper high density doped layer 43c.Lower high density doped layer 43a and upper high density doped layer 43c can be with 5 * 10
19/ cm
3to 2 * 10
20/ cm
3doping density doped with the p-type impurity of for example Mg.Low-density doped layer 43b has than lower high density doped layer 43a and the low doping density of upper high density doped layer 43c, and low-density doped layer 43b is arranged between lower high density doped layer 43a and upper high density doped layer 43c.Low-density doped layer 43b can for example, at its growing period interrupt source gas Mg (, Cp
2the growth of getting off of the situation of supply Mg).
At the growing period of low-density doped layer 43b, can utilize N
2gas replaces utilizing H2 to reduce impurity content as vector gas.Low-density doped layer 43b forms than upper high density doped layer 43c and the large thickness of lower high density doped layer 43a.For example, low-density doped layer 43b can form the thickness of about 60nm, and each in upper high density doped layer 43c and lower high density doped layer 43a can form the thickness of 10nm.As a result, p-type contact layer 43 has improved crystalline quality and has had the impurity density reducing, thereby prevents or reduce the loss of the black light causing due to p-type contact layer 43.
Delta doped layer 45 can be arranged on p-type contact layer 43 to reduce ohmic contact resistance.Delta doped layer 45 with high density doped with p-type or N-shaped impurity, to reduce the Ohmic resistance between electrode and p-type contact layer 43.Delta doped layer 45 can form approximately
extremely
thickness.
Can be by the epitaxial loayer patterning in substrate 21 being manufactured to the light-emitting device of transversary or flip chip structure.In addition, can manufacture by removing substrate 21 light-emitting device of vertical structure.
Experimental example 1
In order to check that light output, according to the variation of the Al content in the first barrier layer 39b of the most close N-shaped contact layer 27, the Al content in the first barrier layer, carrys out grown epitaxial layer by MOCVD under identical condition.Fig. 3 is the figure that describes light output and the relation of the Al content of the first barrier layer.Barrier layer except the first barrier layer has identical component.Utilize atom-probe to measure the Al content of each barrier layer, other barrier layer comprises about 20% Al.
With reference to Fig. 3, when the Al of the first barrier layer content is during than the Al content of other barrier layer high 14%, light-emitting device has relatively high light output.On the other hand, when the first barrier layer does not comprise Al, light-emitting device has relatively low light output.In addition, when the first barrier layer comprises about 47% aluminium (the Al content than other barrier layer is high by 27%), light-emitting device sample has the light output fewer than other light-emitting device sample, in described other light-emitting device sample, the first barrier layer has the identical Al content with other barrier layer.
Experimental example 2
In order to check that light output changes according to the light of the thickness of the first barrier layer 39b of the most close N-shaped contact layer 27, except the thickness of the first barrier layer, carrys out grown epitaxial layer by MOCVD under identical condition.Fig. 4 is the figure that describes light output and the relation of the thickness of the first barrier layer.All barrier layers except the most end barrier layer of the first barrier layer and the most close p-type contact layer 43 form approximately
thickness, most end barrier layer forms approximately
relatively thick thickness.In addition, the first barrier layer has about 34% Al content, and other barrier layer has about 20% Al content.
With reference to Fig. 4, when the first barrier layer has identical with other barrier layer
thickness time, light-emitting device has the output of relatively high light.On the other hand, when the first barrier layer has
thickness time, light-emitting device has the output of relatively low light, even at the first barrier layer, has
the situation of thick thickness under, light-emitting device has relatively low light output.
In near ultraviolet light-emitting device in association area, N-shaped contact layer is formed by AlGaN.Owing to occupying the contact layer of the most of thickness except substrate of nearly UV light-emitting device, by AlGaN, formed, therefore can prevent the light loss being caused by light absorption, but because the epitaxial loayer crystalline quality in nearly UV light-emitting device is low, be therefore difficult to improve light output or light extraction efficiency.According to embodiment, due to the most of of N-shaped contact layer and p-type contact layer or all formed by gallium nitride, therefore can improve the crystalline quality of active region.The light that therefore, can have by the light loss that prevents from being caused by light absorption an improvement according to the light-emitting device of embodiment is exported.
In addition, the amount because the first barrier layer comprises the Al more than other barrier layer, therefore can have the light output of further improvement according to the light-emitting device of embodiment.In addition, near ultraviolet light-emitting device can reduce the light loss being caused by light absorption by strengthening the crystalline quality of N-shaped and p-type contact layer.
It will be apparent to one skilled in the art that in the situation that not departing from the spirit or scope of the present invention, can make in the present invention various modifications and distortion.Therefore, the invention is intended to contain modification and distortion that the present invention is made, as long as they fall into the scope of claim and equivalent thereof.
Claims (12)
1. a light-emitting device, comprising:
N-shaped contact layer, comprises GaN layer;
P-type contact layer, comprises GaN layer; And
Active region, comprises the multi-quantum pit structure being arranged between N-shaped contact layer and P type contact layer, and active region is constructed to the black light that emission wavelength is 365nm to 309nm.
2. light-emitting device as claimed in claim 1, wherein, the active region of multi-quantum pit structure comprises barrier layer and trap layer, and barrier layer comprises AlGaN, and the first barrier layer of the most close N-shaped contact layer comprises than many 2% to 4% the Al of other barrier layer.
3. light-emitting device as claimed in claim 2, wherein:
Trap layer comprises InGaN, and the emission wavelength black light that is 375nm to 390nm; Barrier layer except the first barrier layer comprises and comprises 15% to 25% Al and 1% or the AlInGaN of In still less.
4. light-emitting device as claimed in claim 3, wherein, the first barrier layer comprises and comprises 30% to 40% Al and 1% or the AlInGaN of In still less.
5. light-emitting device as claimed in claim 1, wherein, p-type contact layer comprises:
The first high density doped layer;
The second high density doped layer; And
Low-density doped layer, is arranged between the first high density doped layer and the second high density doped layer.
6. light-emitting device as claimed in claim 5, wherein, low-density doped layer is than the first high density doped layer and the second high density doping bed thickness.
7. light-emitting device as claimed in claim 1, wherein, N-shaped contact layer comprises:
The one GaN layer;
The 2nd GaN layer; And
Intermediate layer, comprise sandwich construction and be arranged on a GaN layer and the 2nd GaN layer between.
8. light-emitting device as claimed in claim 7, wherein, intermediate layer comprises and replaces stacking AlInN and GaN layer.
9. light-emitting device as claimed in claim 1, described light-emitting device also comprises:
Superlattice layer, is arranged between N-shaped contact layer and active region; And
Electron injecting layer, is arranged between superlattice layer and active region, and electron injecting layer comprises the N-shaped impurity doping density than superlattice floor height.
10. light-emitting device as claimed in claim 9, wherein, superlattice layer comprises the InGaN/InGaN structure of sequence stack, electron injecting layer comprises GaN or InGaN.
11. light-emitting devices as claimed in claim 9, described light-emitting device also comprises the unadulterated GaN layer being arranged between N-shaped contact layer and superlattice layer.
12. light-emitting devices as claimed in claim 11, described light-emitting device also comprises:
Low-density GaN layer, is arranged between unadulterated GaN layer and superlattice layer, low-density GaN layer with than the low density of N-shaped contact layer doped with N-shaped impurity; And
High density GaN layer, is arranged between low-density GaN layer and superlattice layer, high density GaN layer with than the density of low-density GaN floor height doped with N-shaped impurity.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2012-0032195 | 2012-03-29 | ||
| KR20120032195 | 2012-03-29 | ||
| KR10-2013-0025989 | 2013-03-12 | ||
| KR1020130025989A KR101997020B1 (en) | 2012-03-29 | 2013-03-12 | Near uv light emitting device |
| PCT/KR2013/002647 WO2013147552A1 (en) | 2012-03-29 | 2013-03-29 | Near uv light emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104205367A true CN104205367A (en) | 2014-12-10 |
| CN104205367B CN104205367B (en) | 2017-06-16 |
Family
ID=49632874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201380017852.5A Active CN104205367B (en) | 2012-03-29 | 2013-03-29 | Near ultraviolet light-emitting device |
Country Status (3)
| Country | Link |
|---|---|
| JP (2) | JP6484551B2 (en) |
| KR (1) | KR101997020B1 (en) |
| CN (1) | CN104205367B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110581204A (en) * | 2019-08-28 | 2019-12-17 | 映瑞光电科技(上海)有限公司 | GaN-based light emitting diode epitaxial structure and preparation method thereof |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102160070B1 (en) * | 2013-10-28 | 2020-09-25 | 서울바이오시스 주식회사 | Near uv light emitting device |
| DE102016112294A1 (en) | 2016-07-05 | 2018-01-11 | Osram Opto Semiconductors Gmbh | Semiconductor layer sequence |
| DE102016117477A1 (en) | 2016-09-16 | 2018-03-22 | Osram Opto Semiconductors Gmbh | Semiconductor layer sequence |
| DE102017104370A1 (en) * | 2017-03-02 | 2018-09-06 | Osram Opto Semiconductors Gmbh | Semiconductor body |
| FR3076399B1 (en) * | 2017-12-28 | 2020-01-24 | Aledia | OPTOELECTRONIC DEVICE COMPRISING THREE-DIMENSIONAL LIGHT EMITTING DIODES |
| JP6927112B2 (en) * | 2018-03-27 | 2021-08-25 | 豊田合成株式会社 | Manufacturing method of semiconductor devices |
| CN111403564A (en) * | 2020-03-31 | 2020-07-10 | 厦门乾照半导体科技有限公司 | Infrared light-emitting diode epitaxial structure, chip and manufacturing method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003046127A (en) * | 2001-05-23 | 2003-02-14 | Sanyo Electric Co Ltd | Nitride semiconductor light-emitting element |
| CN1484880A (en) * | 2001-11-05 | 2004-03-24 | ���ǻ�ѧ��ҵ��ʽ���� | Semiconductor element |
| US20110017976A1 (en) * | 2008-03-27 | 2011-01-27 | Nitek, Inc | Ultraviolet light emitting diode/laser diode with nested superlattice |
| US20110140079A1 (en) * | 2008-08-12 | 2011-06-16 | Wooree Lst Co., Ltd | Semiconductor Light Emitting Device |
| US20110253974A1 (en) * | 2008-11-20 | 2011-10-20 | Mitsubishi Chemical Corporation | Nitride semiconductor |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09232629A (en) * | 1996-02-26 | 1997-09-05 | Toshiba Corp | Semiconductor element |
| JP3551101B2 (en) * | 1999-03-29 | 2004-08-04 | 日亜化学工業株式会社 | Nitride semiconductor device |
| JP4161603B2 (en) | 2001-03-28 | 2008-10-08 | 日亜化学工業株式会社 | Nitride semiconductor device |
| JP3946541B2 (en) * | 2002-02-25 | 2007-07-18 | 三菱電線工業株式会社 | LIGHT EMITTING DEVICE, LIGHTING DEVICE USING THE SAME, AND METHOD FOR MANUFACTURING AND DESIGNING THE LIGHT EMITTING DEVICE |
| JP4385746B2 (en) * | 2003-11-28 | 2009-12-16 | 三菱化学株式会社 | Nitride semiconductor device manufacturing method |
| KR101017396B1 (en) * | 2008-08-20 | 2011-02-28 | 서울옵토디바이스주식회사 | Light emitting diode having modulation doped layer |
| JP5330040B2 (en) * | 2009-03-17 | 2013-10-30 | 株式会社東芝 | Semiconductor device, semiconductor device, semiconductor wafer, and semiconductor crystal growth method |
| WO2011083940A2 (en) * | 2010-01-05 | 2011-07-14 | 서울옵토디바이스주식회사 | Light-emitting diode and method for manufacturing same |
-
2013
- 2013-03-12 KR KR1020130025989A patent/KR101997020B1/en active IP Right Grant
- 2013-03-29 JP JP2015503124A patent/JP6484551B2/en active Active
- 2013-03-29 CN CN201380017852.5A patent/CN104205367B/en active Active
-
2017
- 2017-12-15 JP JP2017241150A patent/JP6587673B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003046127A (en) * | 2001-05-23 | 2003-02-14 | Sanyo Electric Co Ltd | Nitride semiconductor light-emitting element |
| CN1484880A (en) * | 2001-11-05 | 2004-03-24 | ���ǻ�ѧ��ҵ��ʽ���� | Semiconductor element |
| US20110017976A1 (en) * | 2008-03-27 | 2011-01-27 | Nitek, Inc | Ultraviolet light emitting diode/laser diode with nested superlattice |
| US20110140079A1 (en) * | 2008-08-12 | 2011-06-16 | Wooree Lst Co., Ltd | Semiconductor Light Emitting Device |
| US20110253974A1 (en) * | 2008-11-20 | 2011-10-20 | Mitsubishi Chemical Corporation | Nitride semiconductor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110581204A (en) * | 2019-08-28 | 2019-12-17 | 映瑞光电科技(上海)有限公司 | GaN-based light emitting diode epitaxial structure and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20130111294A (en) | 2013-10-10 |
| KR101997020B1 (en) | 2019-07-08 |
| JP6587673B2 (en) | 2019-10-09 |
| JP2015511776A (en) | 2015-04-20 |
| CN104205367B (en) | 2017-06-16 |
| JP2018074173A (en) | 2018-05-10 |
| JP6484551B2 (en) | 2019-03-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9911898B2 (en) | Ultraviolet light-emitting device | |
| KR102246648B1 (en) | Ultra violet light emitting diode | |
| US6881602B2 (en) | Gallium nitride-based semiconductor light emitting device and method | |
| CN104205367A (en) | Near UV light emitting device | |
| US10177273B2 (en) | UV light emitting device | |
| KR100931509B1 (en) | Nitride semiconductor light emitting device and manufacturing method | |
| US9224913B2 (en) | Near UV light emitting device | |
| US10164150B2 (en) | Near UV light emitting device | |
| US9312447B2 (en) | Near UV light emitting device | |
| US8759815B2 (en) | Nitride based semiconductor light emitting device | |
| CN204179101U (en) | Black light emitter | |
| KR20140002910A (en) | Near uv light emitting device | |
| CN114497304A (en) | Semiconductor element | |
| KR101198759B1 (en) | Nitride light emitting device | |
| KR101876576B1 (en) | Nitride semiconductor light emitting device and method for fabricating the same | |
| KR102302320B1 (en) | Light emitting device | |
| KR102315594B1 (en) | Light emitting device and lighting system | |
| KR101922934B1 (en) | Nitride semiconductor light emitting device | |
| KR101144370B1 (en) | Nitride semiconductor LED | |
| CN116666513A (en) | Semiconductor ultraviolet light-emitting diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant |