CN114497304A - Semiconductor element - Google Patents
Semiconductor element Download PDFInfo
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- CN114497304A CN114497304A CN202210104197.8A CN202210104197A CN114497304A CN 114497304 A CN114497304 A CN 114497304A CN 202210104197 A CN202210104197 A CN 202210104197A CN 114497304 A CN114497304 A CN 114497304A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 107
- 230000000903 blocking effect Effects 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 230000006798 recombination Effects 0.000 claims abstract description 10
- 238000005215 recombination Methods 0.000 claims abstract description 10
- 230000001133 acceleration Effects 0.000 claims abstract description 7
- 229910052594 sapphire Inorganic materials 0.000 claims description 13
- 239000010980 sapphire Substances 0.000 claims description 13
- 230000007423 decrease Effects 0.000 claims description 12
- 239000011777 magnesium Substances 0.000 claims description 11
- 230000000694 effects Effects 0.000 claims description 10
- 239000002131 composite material Substances 0.000 claims description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- 230000005525 hole transport Effects 0.000 claims description 6
- 229910052596 spinel Inorganic materials 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 230000003247 decreasing effect Effects 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 229910002704 AlGaN Inorganic materials 0.000 claims description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 3
- 229910010092 LiAlO2 Inorganic materials 0.000 claims description 3
- 229910010936 LiGaO2 Inorganic materials 0.000 claims description 3
- 229910026161 MgAl2O4 Inorganic materials 0.000 claims description 3
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910007948 ZrB2 Inorganic materials 0.000 claims description 3
- VWZIXVXBCBBRGP-UHFFFAOYSA-N boron;zirconium Chemical compound B#[Zr]#B VWZIXVXBCBBRGP-UHFFFAOYSA-N 0.000 claims description 3
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- -1 magnesium aluminate Chemical class 0.000 claims description 3
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000011029 spinel Substances 0.000 claims description 3
- 125000004429 atom Chemical group 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 12
- 230000001276 controlling effect Effects 0.000 abstract description 3
- 238000003475 lamination Methods 0.000 abstract description 3
- 230000008569 process Effects 0.000 abstract description 3
- 230000005855 radiation Effects 0.000 abstract description 3
- 230000009467 reduction Effects 0.000 abstract description 3
- 230000001105 regulatory effect Effects 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 11
- 230000006872 improvement Effects 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000001819 mass spectrum Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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Abstract
The invention relates to the technical field of semiconductor photoelectric devices, in particular to a semiconductor element which sequentially comprises a substrate, a first conductive type semiconductor, a multi-quantum well, an electron blocking layer and a second conductive type semiconductor from bottom to top, wherein the concentrations of C, O of the second conductive type semiconductor and the electron blocking layer are regulated and controlled by controlling the pressure, temperature, MO source, flow, proportion and the like of N2/H2/NH3 in the lamination process, so that the concentrations of C, O of the second conductive type semiconductor and the electron blocking layer are gradually reduced, the concentration of C, O of the electron blocking layer is lower than the concentration of C, O of the second conductive type semiconductor, and the two form a C, O concentration reduction gradient trend towards the direction of the multi-quantum well; and a hole acceleration potential field towards the direction of the multiple quantum wells is formed, so that the transport capability of holes and the efficiency of injecting the holes into the multiple quantum wells are improved, and the radiation recombination efficiency of the semiconductor light-emitting element is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor photoelectric devices, in particular to a semiconductor element.
Background
The semiconductor element, particularly the semiconductor light-emitting element, has the advantages of wide adjustable wavelength range, high light-emitting efficiency, energy conservation, environmental protection, long service life of more than 10 ten thousand hours, small size, strong designability and the like, can gradually replace incandescent lamps and fluorescent lamps, grow light sources for common family illumination, and can be widely applied to new scenes, such as application fields of indoor high-resolution display screens, outdoor display screens, mobile phone and television backlight illumination, street lamps, car lamps, flashlights and the like. However, the conventional nitride semiconductor is grown using a sapphire substrate, and the lattice mismatch and the thermal mismatch are large, resulting in higher defect density and polarization effect, and reducing the light emitting efficiency of the semiconductor light emitting element; meanwhile, the hole ionization efficiency of the conventional nitride semiconductor is far lower than the electron ionization efficiency, so that the hole concentration is lower than the electron concentration by more than 1 order of magnitude, excessive electrons overflow from the multiple quantum wells to the second conductive semiconductor to generate non-radiative recombination, the hole ionization efficiency is low, so that holes of the second conductive semiconductor are difficult to be effectively injected into the multiple quantum wells, and the hole injection efficiency is low, so that the light emitting efficiency of the multiple quantum wells is low.
Disclosure of Invention
In order to solve the above technical problems, the present invention provides a semiconductor device, wherein C, O concentrations of the second conductivity type semiconductor and the electron blocking layer are gradually decreased, C, O concentration of the electron blocking layer is lower than C, O concentration of the second conductivity type semiconductor, and the two form a C, O concentration gradient decreasing trend towards the multiple quantum well; and a hole acceleration potential field towards the direction of the multiple quantum wells is formed, so that the transport capability of holes and the efficiency of injecting the holes into the multiple quantum wells are improved.
In order to realize the purpose, the invention is realized by adopting the following technical scheme:
the invention provides a semiconductor element, which sequentially comprises a substrate, a first conductive type semiconductor, a multi-quantum well, an electron blocking layer and a second conductive type semiconductor from bottom to top, wherein the C, O concentrations of the second conductive type semiconductor and the electron blocking layer are gradually reduced, the C, O concentration of the electron blocking layer is lower than the C, O concentration of the second conductive type semiconductor, and the two forms a C, O concentration gradient descending trend towards the direction of the multi-quantum well.
In the above embodiment, the second conductivity type semiconductor has a C concentration of 5E19cm-3To 1E17cm-3Gradually decreases, and the O concentration is 5E19cm-3To 5E16cm-3Gradually decreases in the middle; the electron blocking layer has a C concentration of 5E18cm-3To 1E16cm-3Gradually decreases, and the O concentration is 1E18cm-3To 1E16cm-3Gradually decreases in between.
In the above technical solution, the second conductivity type semiconductor and the electron blocking layer form a decreasing C, O concentration gradient toward the multiple quantum well, and the average C, O concentration of the electron blocking layer is at least 1 time lower than the average C, O concentration of the second conductivity type semiconductor, so as to form a hole acceleration potential field toward the multiple quantum well, and improve the hole transport capacity and the hole injection efficiency into the multiple quantum well.
In the above technical solution, the concentration of the upper surface C, O of the second conductivity type semiconductor is greater than 5E18cm-3The higher concentration of the upper surface C, O reduces the interfacial resistance and hole transport capability between the second conductivity type semiconductor and the metal electrode, and achieves good ohmic contact characteristics.
In the above technical solution, the C, O concentration of the interface between the electron blocking layer and the multiple quantum well is less than 1E18cm-3The negative effects of C, O atoms on non-radiative recombination centers and deep-level impurities of the multiple quantum wells are reduced, and the reverse leakage current of the multiple quantum wells is reduced.
In the above technical solution, the concentration of C in the electron blocking layer is less than 5E18cm-3O concentration less than 1E18cm-3The lower C, O concentration reduces the acceptor compensation effect of C, O, which improves the hole ionization effect of the electron blocking layer.
In the above technical solution, the Mg doping concentration of the second conductivity type empty semiconductor is greater than 1E18cm-3The Mg doping concentration of the electron blocking layer is more than 1E18cm-3。
In the above technical solution, the doping concentration of Si in the first conductivity type semiconductor is greater than 1E17cm-3。
In the above technical solution, the first conductivity type semiconductor, the multiple quantum well, the electron blocking layer, and the second conductivity type semiconductor include GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, or any combination thereof.
In the above technical solution, the substrate includes a sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire/SiO 2 composite substratesapphire/AlN composite substrate, sapphire/SiNx and magnesium aluminate spinel MgAl2O4、MgO、ZnO、ZrB2、LiAlO2And LiGaO2Any one of composite substrates.
Compared with the prior art, the invention has the beneficial effects that: the concentration of C, O of the second conductivity type semiconductor and the electron blocking layer is regulated and controlled by controlling the pressure, temperature, MO source, flow rate, proportion and the like of N2/H2/NH3 in the lamination process, so that the concentration of C, O of the second conductivity type semiconductor and the electron blocking layer is gradually reduced, the concentration of C, O of the electron blocking layer is lower than the concentration of C, O of the second conductivity type semiconductor, the concentration gradient of C, O is reduced towards the direction of the multiple quantum wells, a hole acceleration potential field towards the direction of the multiple quantum wells is formed, the transport capacity of holes and the efficiency of injecting the holes into the multiple quantum wells are improved, and the light emitting uniformity is improved due to the improvement of the expanding capacity of the holes, so that the radiation recombination efficiency of the semiconductor light emitting element is improved.
Drawings
FIG. 1 is a schematic structural diagram of a semiconductor device according to an embodiment of the present invention;
FIG. 2 is a SIMS secondary ion mass spectrum of a blue-green semiconductor light emitting device according to an embodiment of the present invention;
FIG. 3 is a SIMS secondary ion mass spectrum of the deep ultraviolet semiconductor light emitting device according to the embodiment of the present invention;
reference numerals: 100: a substrate; 101: a first conductivity type semiconductor; 102: a multiple quantum well; 103: an electron blocking layer; 104: a semiconductor of a second conductivity type.
Detailed Description
The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.
As shown in fig. 1, a semiconductor device according to an embodiment of the present invention includes, in order from bottom to top, a substrate 100, a first conductivity type semiconductor 101, a multiple quantum well 102, an electron blocking layer 103, and a second conductivity type semiconductor 104, wherein the substrate 100 is a substrate on which a nitride semiconductor crystal can be epitaxially grown on a surface, and a substrate satisfying a high transmittance (for example, a transmittance of 50% or more) in a wavelength range of light emitted from a semiconductor light emitting device can be selected and used; the first conductive type semiconductor 101 and the second conductive type semiconductor 104 may be n-type semiconductor layers, the conductive type being n-type; or a p-type semiconductor layer, the conductivity type being p-type; a first conductive type semiconductor 101, a multiple quantum well 102, an electron blocking layer 103, and a second conductive type semiconductor 104 are sequentially stacked on a substrate 100, and the stacked semiconductor layers are stacked by a method such as a metal organic chemical vapor deposition method (MOCVD method), a metal organic vapor phase epitaxy method (MOVPE method), a molecular beam epitaxy method (MBE method), or a hydride vapor phase epitaxy method (HVPE method); the multiple quantum well 102 has a stacked structure in which well layers and barrier layers are alternately stacked; the electron blocking layer 103 can effectively prevent electrons generated by the N-type semiconductor layer from entering the P-type semiconductor layer, thereby avoiding non-radiative recombination of the electrons and holes in the P-type semiconductor layer, avoiding reduction of hole concentration caused by transition of the electrons, and improving the light emitting efficiency of the light emitting diode; wherein the C, O concentrations of the second conductive semiconductor 104 and the electron blocking layer 103 are gradually reduced, and the C, O concentration of the electron blocking layer 103 is lower than the C, O concentration of the second conductive semiconductor 104, so that the concentration of the two forms a C, O concentration gradient descending trend towards the multiple quantum well 102.
The traditional nitride semiconductor grows by using a sapphire substrate, and has large lattice mismatch and thermal mismatch, so that higher defect density and polarization effect are caused, and the luminous efficiency of a semiconductor luminous element is reduced; meanwhile, the hole ionization efficiency of the traditional nitride semiconductor is far lower than the electron ionization efficiency, so that the hole concentration is lower than the electron concentration by more than 1 order of magnitude, excessive electrons overflow from the multiple quantum wells to the second conductive semiconductor to generate non-radiative recombination, the holes of the second conductive semiconductor are difficult to be effectively injected into the multiple quantum wells due to the low hole ionization efficiency, and the light emitting efficiency of the multiple quantum wells is low due to the low hole injection efficiency; the concentration of C, O of the second conductive type semiconductor 104 and the concentration of C, O of the electron blocking layer 103 are regulated and controlled by controlling the pressure, the temperature, the MO source, the flow rate, the proportion and the like of N2/H2/NH3 in the lamination process, so that the concentration of C, O of the second conductive type semiconductor 104 and the concentration of C, O of the electron blocking layer 103 are gradually reduced, the concentration of C, O of the electron blocking layer 103 is lower than the concentration of C, O of the second conductive type semiconductor 104, the concentration gradient descending trend of C, O is formed towards the direction of the multiple quantum well 102, a hole acceleration potential field towards the direction of the multiple quantum well is formed, the transport capacity of holes and the efficiency of injecting the holes into the multiple quantum well are improved, and the light emitting uniformity is improved due to the improvement of the expanding capacity of the holes, and the radiation recombination efficiency of the semiconductor light emitting element is improved. The technical scheme of the invention can be applied to semiconductor light-emitting elements outside various wave bands including but not limited to blue-green light, deep ultraviolet and the like, as shown in figures 2 and 3, SIMS secondary ion mass spectrograms of the blue-green light and deep ultraviolet semiconductor light-emitting elements are respectively shown.
As an improvement of the above technical solution, the C concentration of the second conductivity type semiconductor 104 is 5E19cm-3To 1E17cm-3Gradually decreases, and the O concentration is 5E19cm-3To 5E16cm-3Gradually decreases in the middle; the concentration of C of the electron blocking layer 103 is 5E18cm-3To 1E16cm-3Gradually decreases, and the O concentration is 1E18cm-3To 1E16cm-3Gradually decreases in the middle; the electron blocking layer has a C concentration of less than 5E18cm-3O concentration less than 1E18cm-3The lower C, O concentration reduces the acceptor compensation effect of C, O, which improves the hole ionization effect of the electron blocking layer.
Preferably, the second conductive type semiconductor 104 and the electron blocking layer 103 form a downward C, O concentration gradient toward the multiple quantum well 102, and the average C, O concentration of the electron blocking layer 103 is at least 1 time lower than the average C, O concentration of the second conductive type semiconductor 104, so as to form a hole acceleration potential field toward the multiple quantum well 102, and improve the hole transport capability and the hole injection efficiency into the multiple quantum well.
Further, the concentration of the top surface C, O of the second conductivity type semiconductor 104 is greater than 5E18cm-3The higher concentration of the upper surface C, O reduces the interfacial resistance and hole transport capability between the second conductivity type semiconductor and the metal electrode, and achieves good ohmic contact characteristics.
As an improvement of the above technical solutionThe C, O concentration of the interface of the electron barrier layer 103 and the multiple quantum well 102 is less than 1E18cm-3The negative effects of C, O atoms on the generation of nonradiative recombination centers, deep level impurities, and the reduction of reverse leakage current of multiple quantum wells are mitigated.
As an improvement of the above technical solution, the Mg doping concentration of the second conductive type semiconductor 104 is more than 1E18cm-3The Mg doping concentration of the electron blocking layer 103 is more than 1E18cm-3The concentration of C/O of the second conductive semiconductor is controlled and matched with the doping concentration of Mg, so that the ionization efficiency of a cavity and the solubility of Mg can be improved, the transverse growth rate is improved, the surface of the second conductive semiconductor is flat in growth, and the transverse expansion capability and the ESD resistance capability of the cavity are improved.
As an improvement of the above technical solution, the first conductivity type semiconductor 101 has a Si doping concentration greater than 1E17cm-3Monosilane (SiH4) or disilane (Si2H6) can be used as the Si raw material.
In the present invention, the first conductivity type semiconductor 101, the multiple quantum well 102, the electron blocking layer 103, and the second conductivity type semiconductor 104 include GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, or any combination thereof.
The substrate comprises a sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, IP, sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, sapphire/SiNx and magnesium aluminate spinel MgAl2O4、MgO、ZnO、ZrB2、LiAlO2And LiGaO2Any of the composite substrates.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.
Claims (10)
1. The semiconductor element is characterized by sequentially comprising a substrate, a first conductive type semiconductor, a multi-quantum well, an electron blocking layer and a second conductive type semiconductor from bottom to top, wherein the C, O concentration of the second conductive type semiconductor and the electron blocking layer is gradually reduced, the C, O concentration of the electron blocking layer is lower than the C, O concentration of the second conductive type semiconductor, and the two forms a C, O concentration gradient descending trend towards the direction of the multi-quantum well.
2. The semiconductor device according to claim 1, wherein the second conductivity type semiconductor has a C concentration of 5E19cm-3To 1E17cm-3Gradually decreases, and the O concentration is 5E19cm-3To 5E16cm-3Gradually decreases in the middle; the electron blocking layer has a C concentration of 5E18cm-3To 1E16cm-3Gradually decreases, and the O concentration is 1E18cm-3To 1E16cm-3Gradually decreases in between.
3. The semiconductor device according to claim 1, wherein the second conductivity type semiconductor and the electron blocking layer form a decreasing C, O concentration gradient toward the multiple quantum well, and the average C, O concentration of the electron blocking layer is at least 1 times lower than the average C, O concentration of the second conductivity type semiconductor, thereby forming a hole acceleration potential field toward the multiple quantum well, and improving hole transport capability and hole injection efficiency into the multiple quantum well.
4. The semiconductor device of claim 1, wherein the second conductivity type semiconductor has a top surface C, O concentration greater than 5E18cm-3The interface resistance and the hole transport capability between the second conductivity type semiconductor and the metal electrode are reduced, and good ohmic contact characteristics are realized.
5. The semiconductor device of claim 1 wherein said electron blocking layer and multiple quantum well interface has a C, O concentration of less than 1E18cm-3The negative effects of C, O atoms on the generation of non-radiative recombination centers and deep-level impurities of the multiple quantum wells are reduced, and the negative effects of atoms on the generation of non-radiative recombination centers and deep-level impurities of the multiple quantum wells are reducedLow reverse leakage current of multiple quantum wells.
6. The semiconductor device of claim 1, wherein said electron blocking layer has a C concentration of less than 5E18cm-3O concentration less than 1E18cm-3。
7. The semiconductor device of claim 1, wherein said second conductivity type empty semiconductor has a Mg doping concentration greater than 1E18cm-3The Mg doping concentration of the electron blocking layer is more than 1E18cm-3。
8. The semiconductor device of claim 1, wherein said semiconductor of said first conductivity type has a Si doping concentration greater than 1E17cm-3。
9. The semiconductor element according to claim 1, wherein the first conductivity type semiconductor, the multiple quantum well, the electron blocking layer, and the second conductivity type semiconductor comprise GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, or any combination thereof.
10. The semiconductor device of claim 1, wherein the substrate comprises sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire/SiO 2 composite substrate, sapphire/AlN composite substrate, sapphire/SiNx, magnesium aluminate spinel MgAl2O4、MgO、ZnO、ZrB2、LiAlO2And LiGaO2Any of the composite substrates.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115498083A (en) * | 2022-10-24 | 2022-12-20 | 淮安澳洋顺昌光电技术有限公司 | Light emitting diode epitaxial structure and light emitting diode |
| CN115832138A (en) * | 2023-02-16 | 2023-03-21 | 江西兆驰半导体有限公司 | Light emitting diode epitaxial wafer, preparation method thereof and light emitting diode |
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2022
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115498083A (en) * | 2022-10-24 | 2022-12-20 | 淮安澳洋顺昌光电技术有限公司 | Light emitting diode epitaxial structure and light emitting diode |
| CN115832138A (en) * | 2023-02-16 | 2023-03-21 | 江西兆驰半导体有限公司 | Light emitting diode epitaxial wafer, preparation method thereof and light emitting diode |
| CN115832138B (en) * | 2023-02-16 | 2023-06-02 | 江西兆驰半导体有限公司 | Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode |
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