CN104205367B - Near ultraviolet light-emitting device - Google Patents
Near ultraviolet light-emitting device Download PDFInfo
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- CN104205367B CN104205367B CN201380017852.5A CN201380017852A CN104205367B CN 104205367 B CN104205367 B CN 104205367B CN 201380017852 A CN201380017852 A CN 201380017852A CN 104205367 B CN104205367 B CN 104205367B
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- 230000004888 barrier function Effects 0.000 claims description 99
- 239000012535 impurity Substances 0.000 claims description 26
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- 238000010276 construction Methods 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 4
- 238000005036 potential barrier Methods 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 description 73
- 239000000758 substrate Substances 0.000 description 14
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 13
- 229910002704 AlGaN Inorganic materials 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 229910052738 indium Inorganic materials 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 230000004087 circulation Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- -1 InGaN Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
- G02B5/3033—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state in the form of a thin sheet or foil, e.g. Polaroid
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
It is disclosed that a kind of ultraviolet (UV) light-emitting device.The light-emitting device includes：N-contact layer, including GaN layer；P type contact layer, including GaN layer；The active region of multi-quantum pit structure, is arranged between n-contact layer and P type contact layer, and active region is configured to the black light that launch wavelength is 365nm to 390nm.
Description
Technical field
The present invention relates to a kind of inorganic semiconductor light-emitting device, more particularly, to a kind of near ultraviolet light-emitting device.
Background technology
Generally, gallium nitride-based semiconductor has been widely used in as full color display, traffic lights, ordinary lamps and light
In the blue green light emitting diode or laser diode of the light source of communication instrument.Specifically, InGaN (InGaN) compound half
Conductor causes sizable concern due to its narrow band gap.
This gallium nitride-based compound semiconductor is in such as large scale natural light panel display apparatus, back light unit
In the various fields of light source, traffic lights, indoor illumination light fitting, high intensity light source, high resolution output system and optic communication etc.
To utilization.Light-emitting device for launching black light be applied to forgery distinguish, resin solidification and ultraviolet treatment, and energy
It is enough to be combined to realize the visible ray of shades of colour with fluorescent material.
Black light refers to ultraviolet light of the wave-length coverage in about 320nm to 390nm.Gallium nitride (GaN) has about
The band gap of 3.42eV, this luminous energy with wavelength at about 365nm is corresponding.Therefore, including InGaN well layer light-emitting device
Can be the black light of 365nm or longer (that is, wavelength is 365nm to 390nm) for launch wavelength according to indium content.
Because the light produced in well layer is launched into outside through barrier layer and contact layer, therefore multiple semiconductor layers are located at
On path along light propagation, and cause light absorbs due to these semiconductor layers.Specifically, when the band of semiconductor layer
Gap be less than or similar to well layer band gap when, there is serious light loss.Specifically, it is necessary to which control is due to occupying light-emitting device
Light absorbs caused by the n-contact layer and P type contact layer of most of thickness.
Therefore, near ultraviolet light-emitting device in the related art, barrier layer, n-contact layer and P type contact layer and electricity
Sub- barrier layer is formed by the AlGaN with the big band gap of the band gap than InGaN.However, due to being difficult in the good of guarantee AlGaN
Grow with making AlGaN relative thicks while crystallinity, therefore the electrical characteristics and optical characteristics of near ultraviolet light-emitting device are not so good as blueness
The electrical characteristics and optical characteristics of light-emitting device, and near ultraviolet light-emitting device goes out with the price higher than blueness/green light emitting device
Sell.
The content of the invention
【Technical problem】
Light output and light extraction efficiency it is an aspect of the invention to improve gallium nitride base near ultraviolet light-emitting device.
It is another aspect of the invention to provide a kind of near ultraviolet light-emitting device that can be easily manufactured.
【Technical scheme】
According to an aspect of the present invention, a kind of light-emitting device includes：N-contact layer, including GaN layer；P type contact layer,
Including GaN layer；The active layer of multi-quantum pit structure, is arranged between n-contact layer and P type contact layer.Multi-quantum pit structure
Active region launch wavelength is the black light of 365nm to 309nm.
The active region of multi-quantum pit structure may include barrier layer and well layer.Barrier layer can be formed by AlGaN.Due to gesture
Barrier layer includes In, therefore, it is possible to alleviate the lattice mismatch between well layer and barrier layer.
In addition, the first barrier layer near n-contact layer can include more than other barrier layers 10%~20% Al.The
One barrier layer is formed by the lattice parameter AlInGaN lower than other barrier layers, so as to improve the light output of light-emitting device.Here,
The metal element content that precentagewise is represented is total amount of every kind of metal ingredient relative to metal ingredient in gallium nitride based layer
Component.In other words, by AlxInyGazThe Al content of the gallium nitride based layer that N is represented by according to the % of 100 × x/ (x+y+z) come table
Show.
Well layer can be formed the black light of the simultaneously a length of 375nm to 390nm of transmitted wave by InGaN, except the first barrier layer
Outside barrier layer can be formed by the AlInGaN of the In comprising 15% to 25% Al and 1% or less.In addition, the first gesture
Barrier layer can be formed by the AlInGaN of the In comprising 30% to 40% Al and 1% or less.
In certain embodiments, P type contact layer can include lower high density doped layer, upper high density doped layer and be arranged in
Low-density doped layer between upper high density doped layer and lower high density doped layer.In addition, low-density doped layer is than upper high density
Doped layer and lower high density doping thickness.The thickness of the relative thick of low-density doped layer can be used for preventing from being drawn by P type contact layer
The light absorbs for rising.
Additionally, n-contact layer may include lower gallium nitride layer, upper gallium nitride layer and be arranged in gallium nitride layer with lower gallium nitride
The intermediate layer of the sandwich construction between layer.The intermediate layer with sandwich construction being inserted into the center section of n-contact layer can
To improve the crystalline quality of the epitaxial layer in n-contact layer.Specifically, the intermediate layer of sandwich construction can have AlInN and
The structure of GaN stackings alternating with each other.
Light-emitting device can also include：Superlattice layer, between n-contact layer and active region；Electron injecting layer, position
Between superlattice layer and active region.Here, electron injecting layer has the p-type impurity doping density than superlattices floor height.Electricity
Sub- implanted layer causes that electronics is efficiently injected into active region, so as to improve illumination effect.
In a certain embodiment, superlattice layer can have the structure of InGaN/InGaN repeatedly stackings, and electron injecting layer can be with
Formed by GaN or InGaN.Here, InGaN/InGaN represent constitute superlattice layer circulation layer in each layer by InGaN shapes
Into.Here, each layer in these layers need not have the In of same amount.
The GaN layer of undoped p can be arranged between n-contact layer and superlattice layer.The GaN layer of undoped p can abut n
Type contact layer, it is possible to recover the crystalline quality that the possibility of n-contact layer deteriorates by impurity.
Additionally, light-emitting device can also include：Low-density GaN layer, be arranged in the GaN layer of undoped p and superlattice layer it
Between, and with the density lower than n-contact layer doped with p-type impurity；High density GaN layer, is arranged in low-density GaN layer and superlattices
Between layer, and with the density higher than low-density GaN layer doped with p-type impurity.
It is to be understood that overall description and detailed description below above is all exemplary and explanatory, and anticipate
The present invention for required protection is explained further providing.
【Beneficial effect】
In near ultraviolet light-emitting device in the related art, n-contact layer is formed by AlGaN.Lighted due to occupying nearly UV
The contact layer of the most of thickness in addition to substrate of device is formed by AlGaN, therefore, it is possible to the light for preventing from being caused by light absorbs
Loss, but because the crystalline quality of the epitaxial layer in nearly UV light-emitting devices is low, therefore, it is difficult to improve light output or light extraction effect
Rate.According to embodiment, due to n-contact layer and P type contact layer in largely or entirely formed by gallium nitride, therefore, it is possible to change
The crystalline quality of kind active region.Therefore, the light-emitting device according to embodiment can be by the light loss that prevents from being caused by light absorbs
Lose to improve light output.
Further, since the first barrier layer includes the aluminum amount more than other barrier layers, therefore according to the light-emitting device of embodiment
There can be the light output for further improving.Additionally, near ultraviolet light-emitting device can be by strengthening n-contact layer and p-type contact
The crystalline quality of layer is reduced by light loss caused by light absorbs.
Brief description of the drawings
Fig. 1 is the sectional view of the light-emitting device of an exemplary embodiment of the invention；
Fig. 2 is the sectional view of the multi-quantum pit structure of the light-emitting device of exemplary embodiment of the invention；
Fig. 3 is describe the light output of exemplary embodiment of the invention and the multi-quantum pit structure of light-emitting device the
The figure of the relation of the Al content of one barrier layer；And
Fig. 4 is describe the light output of exemplary embodiment of the invention and the multi-quantum pit structure of light-emitting device the
The figure of the relation of the thickness of one barrier layer.
Specific embodiment
Hereinafter, exemplary embodiment of the invention is described in detail with reference to the accompanying drawings.By way of illustration
The following examples are given, those skilled in the art are supplied to thoroughly understanding of the invention with.Therefore, the present invention is not limited
In the following examples, and can realize in a variety of ways.It should be noted that the not accurate ratio of accompanying drawing, and be
Description it is clear, exaggerate some sizes of width, length, thickness etc. in the accompanying drawings.In entire disclosure and accompanying drawing
In, same reference indicates same element.
Fig. 1 is the sectional view of the light-emitting device of an exemplary embodiment of the invention, and Fig. 2 is of the invention
The sectional view of the multi-quantum pit structure of the light-emitting device of exemplary embodiment.
Reference picture 1, the light-emitting device according to one embodiment includes n-contact layer 27, active region 39 and P type contact layer
43.Additionally, light-emitting device may include substrate 21, nucleating layer 23, the GaN layer 29 of cushion 25, undoped p, low-density GaN layer 31,
High density GaN layer 33, superlattice layer 35, electron injecting layer 37, electronic barrier layer 41 or delta doped layer 45.
Substrate 21 is the substrate for growing GaN base semiconductor layer, including sapphire substrates, carborundum (SiC) substrate or
Spinelle substrate, but not limited to this.For example, substrate 21 can be the sapphire substrates (PSS) of patterning.
Nucleating layer 23 can be formed under 400 DEG C to 600 DEG C of temperature range by (Al, Ga) N, be grown with substrate 21
Cushion 25.Nucleating layer 23 is formed by GaN or AlN.Nucleating layer 23 can be formed be of about 25nm thickness.Substrate 21 and N-shaped
Cushion 25 between contact layer 27 grows at relatively high temperature, occurs with the defect for alleviating such as dislocation.For example, buffering
Layer 25 can be formed by the GaN of undoped p, and may have about 1.5 μm of thickness.
N-contact layer 27 can be the semiconductor layer of doping p-type impurity, the GaN base semiconductor layer of the Si that for example adulterates, and can
It is of about 3 μm of thickness with formation.N-contact layer 27 can include GaN layer, and can have single or multiple lift structure.For example, such as
Shown, n-contact layer 27 may include lower GaN layer 27a, intermediate layer 27b and upper GaN layer 27c.Here, intermediate layer 27b can be with
Formed by AlInN, or the sandwich construction that can be alternately stacked with such as about 10 circulations with wherein AlInN and GaN
(including superlattice structure).Lower GaN layer 27a and upper GaN layer 27c are formed as such as about 1.5 μm of similar thickness.Intermediate layer
27b is formed as than lower GaN layer 27a and the small thickness of upper GaN layer 27c.For example, intermediate layer 27b may have about the thickness of 80nm
Degree.Compared with the situation that single GaN layer is continuously grown with the thickness relatively high of about 3mm, intermediate layer 27b is inserted into N-shaped
In the center section of contact layer 27.
In such manner, it is possible to improve the crystalline of epitaxial layer (specifically, being formed in the active region 39 in n-contact layer 27)
Amount.The doping density of the Si being doped in n-contact layer 27 may range from 2 × 1018/cm3To 2 × 1019/cm3, Huo Zhewei
1×1018/cm3To 2 × 1019/cm3.Specifically, lower GaN layer 27a and upper GaN layer 27c can with high density doped with Si impurity,
And intermediate layer 27b can be with the same or relatively low density of the Si impurities phases with upper GaN layer 27c doped with Si impurity, or centre
Layer 27b can be not intended to doped with Si impurity.Due to lower GaN layer 27a and upper GaN layer 27c with high density doped with Si impurity, because
This can reduce the resistance of n-contact layer 27.The electrode for contacting n-contact layer 27 can also contact GaN layer 27c.
The GaN that the GaN layer 29 of undoped p can have impurity by undoped p is formed, and is formed as smaller than upper GaN layer 27c thick
Degree.For example, the GaN layer 29 of undoped p can have the thickness of 80nm to 300nm.Because n-contact layer 27 is doped with p-type impurity,
So n-contact layer 27 has residual stress and low crystalline quality.Therefore, when growing another epitaxial layer in n-contact layer 27
When, it is difficult to epitaxial layer of the growth with well-crystallized quality.However, because the GaN layer 29 of undoped p is not doped with any miscellaneous
Matter, therefore the GaN layer 29 of undoped p plays a part of the retrieving layer of the crystalline quality for recovering n-contact layer 27.Therefore, not
The GaN layer 29 of doping can be directly formed in n-contact layer 27 to abut n-contact layer 27.Further, since undoped p
GaN layer 29 has the resistivity higher than n-contact layer 27, therefore the electronics for being incorporated into active layer 39 from n-contact layer 27 can
It was uniformly dispersed in before the GaN layer 29 through undoped p in n-contact layer 27.
Low-density GaN layer 31 is arranged in the GaN layer 29 of undoped p, and is mixed with the p-type impurity lower than n-contact layer 27
Miscellaneous density.For example, low-density GaN layer 31 can have 5 × 1017/cm3To 5 × 1018/cm3The Si doping densities of scope, and can shape
As the small thickness of the GaN layer 29 than undoped p.For example, low-density GaN layer 31 can have the thickness of 50nm to 150nm.It is highly dense
Degree GaN layer 33 is arranged in low-density GaN layer 31, and with the p-type impurity doping density higher than low-density GaN layer 31.It is highly dense
Degree GaN layer 33 can have the Si doping density similar to the Si doping densities of n-contact layer 27.High density GaN layer 33 can have
There is the thickness smaller than low-density GaN layer 31.For example, high density GaN layer 33 may have about the thickness of 30nm.
Can by by metal source gas be fed in room come the GaN layer 29 of continuously growing n-type contact layer 27, undoped p,
Low-density GaN layer 31 and high density GaN layer 33.Such as trimethyl aluminium (TMA), trimethyl gallium (TMD) and/or trimethyl indium
(TME) the organo metallic material including Al, Ga and In is used as metal source gas.Silane SiH4Can be used as the source gas of Si.This
A little layers can grow at a first temperature of such as 1050 DEG C to 1150 DEG C.
Superlattice layer 35 is arranged in high density GaN layer 33.Can be by by the first InGaN layer with different component and
Two InGaN layers are alternately stacked about 30 circulations to form superlattice layer 35, wherein, each InGaN layer has the thickness of 20nm
Degree.The indium content of the well layer 39w in the indium content specific activity region 39 of the first InGaN layer and the second InGaN layer is low.Superlattice layer
35 can be formed by the layer for being not intended to the undoped p of doping any impurity.Because superlattice layer 35 is formed by the layer of undoped p,
Therefore, it is possible to reduce the current leakage of light-emitting device.
Electron injecting layer 37 has the p-type impurity doping density higher than superlattice layer 35.In addition, electron injecting layer 37 can have
There is the p-type impurity doping density substantially the same with n-contact layer 27.For example, p-type impurity doping density may range from 1
×1019/cm3To 5 × 1019/cm3, or be 1 × 1019/cm3To 3 × 1019/cm3.Due to high density doping electron injecting layer
37, therefore, it is possible to promote electron injection in active region 39.Electron injecting layer 37 can be formed as and high density doped layer 33
Similar thickness or the thickness smaller than high density doped layer 33.For example, electron injecting layer 37 can have the thickness of 20nm.Additionally,
Electron injecting layer 37 can grow at a temperature of the pressure of about 300 supports and about 820 DEG C to 850 DEG C.
Active region 39 is arranged on electron injecting layer 37.Fig. 2 is the sectional view of the amplification of active region 39.
Reference picture 2, active region 39 has includes the Multiple-quantum of the barrier layer 39b for stacking alternating with each otherly and well layer 39w
Well structure.Well layer 39w have can transmitting boundary for 365nm to 390nm black light component.For example, well layer 39w can be with
Formed by such as InGaN or AlInGaN.Here, the In contents of well layer 39w determine according to the wavelength of ultraviolet light.For example, well layer
The In contents of 39w may range from about 2% to 5% molar percentage (therefore, the scope of Ga contents be of about 95% to
98%).Through this description, the content of the compound in various layers is represented also according to molar percentage.It is every in well layer 39w
Individual well layer can have aboutExtremelyThickness.Under the pressure of about 300 supports, well layer 39w can be than normal blue
Well layer 39w is grown at the temperature of the well layer of color light emitting diode temperature (for example, 800 DEG C to 820 DEG C) high.So, well layer can
With with the crystalline quality for improving.
Barrier layer 39b can be formed by the band gap gallium nitride-based semiconductor wider than the band gap of well layer.For example, barrier layer can
Formed with by GaN, InGaN, AlGaN or AlInGaN.Specifically, because barrier layer 39b can be formed by AlInGaN, therefore,
Barrier layer 39b comprising In can alleviate the lattice mismatch between well layer 39w and barrier layer 39b.
Additionally, barrier layer 39b can grow under the slightly higher growth temperature of the growth temperature than well layer 39w.For example, big
Under the pressure of about 300 supports, barrier layer 39b can grow at a temperature of about 820 DEG C to 850 DEG C.
The first barrier layer 39b1 near electron injecting layer 37 or n-contact layer 27 in barrier layer 39b has than it
The Al content of its potential barrier floor height.For example, the first barrier layer 39b1 can be included 10% to 20% more than other barrier layers 39b
Al.For example, when other barrier layers 39b, 39bn include about 20% Al, the first barrier layer 39b1 can include about 30%
To 40% Al.Barrier layer 39b includes about 1% or less indium.Specifically, formed to launch by InGaN as well layer 39w
During the black light of 375nm to 390nm, barrier layer 39b and 39bn in addition to the first barrier layer 39b1 can be by comprising 15%
AlInGaN to 25% Al and about 1% or less In is formed, and the first barrier layer 39b1 can be by comprising 30% to 40%
The AlInGaN of In of Al and 1% or less formed.
Generally, barrier layer is formed as with identical component in light-emitting device.However, in the present embodiment, the first potential barrier
Layer 39b1 includes more than other barrier layers 39b 10% to 20% Al.Electron injecting layer 37 or n-contact layer 27 are formed by GaN.
The difference that can launch between the well layer 39w of black light and the band gap of GaN is relative little.Therefore, the first barrier layer 39b1 shapes
As with the band gap bigger than other barrier layers 39b, so as to carrier is limited in active region 39.Specifically, when using
During AlInGaN barrier layers, the translational speed in hole is significantly decreased, so as to the overflow probability of electronics can be improved.In such case
Under, although it is believed that increase the thickness of electronic barrier layer 41 to prevent the spilling of electronics, but the thickness of electronic barrier layer 41
Increase limitation hole be efficiently injected into active region.
Therefore, the first barrier layer 39b1 is formed as the band gap (about 0.5eV or higher) for having than other potential barrier slice widths, with
By the spilling for reducing the translational speed of electronics effectively to prevent electronics.However, when the Al content of the first barrier layer 39b1 is carried
When high about 20% or more, occur lattice mismatch between the first barrier layer 39b1 and electron injecting layer 37, and the
Lattice mismatch between one barrier layer 39b1 and well layer 39w can become serious, so as to reduce the crystalline quality of active region 39.
First barrier layer can have the thickness essentially identical with other barrier layers in addition to most end barrier layer, or have
The thickness bigger than other barrier layers in addition to the first barrier layer is (for example, about), wherein, most end barrier layer is near electricity
Sub- barrier layer 41 or P type contact layer 43.For example, the first barrier layer can haveExtremelyThickness, specifically, can have
AboutThickness.
Active region 39 can abut electron injecting layer 37.The barrier layer and quantum well layer of active region 39 can be by undoped ps
Layer formed, to improve the crystalline quality of active layer, some parts of active region or all can be doped with impurity reducing
Forward voltage.
Fig. 1 is referred again to, P type contact layer 43 may be arranged on active region 39, and electronic barrier layer 41 may be arranged at active region
Between domain 39 and P type contact layer 43.Electronic barrier layer 41 can be formed by AlGaN or AlInGaN, with alleviate P type contact layer with
Lattice mismatch between active region 39.Electronic barrier layer 41 can include the In of 36% Al and 3%.Electronic barrier layer 41 can be with
With 5 × 1019/cm3To 2 × 1020/cm3Doping density doped with such as Mg n-type impurity.
P type contact layer 43 may include lower high density doped layer 43a, low-density doped layer 43b and upper high density doped layer
43c.Lower high density doped layer 43a and upper high density doped layer 43c can be with 5 × 1019/cm3To 2 × 1020/cm3Doping it is close
Spend the n-type impurity doped with such as Mg.Low-density doped layer 43b has than lower high density doped layer 43a and the doping of upper high density
The layer low doping densities of 43c, low-density doped layer 43b be arranged in lower high density doped layer 43a and upper high density doped layer 43c it
Between.Low-density doped layer 43b can be in its growth period interrupt source gas Mg (for example, Cp2Mg next life in the case of supply)
It is long.
In the growth period of low-density doped layer 43b, it is possible to use N2Gas replaces utilizing H as vector gas2To reduce
Impurity content.Low-density doped layer 43b is formed as than upper high density doped layer 43c and the big thickness of lower high density doped layer 43a.
For example, low-density doped layer 43b can be formed be of about 60nm thickness, upper high density doped layer 43c and lower high density are adulterated
Each in layer 43a can be formed as the thickness of 10nm.As a result, P type contact layer 43 improves crystalline quality and has what is reduced
Impurity density, so as to prevent or reduce due to the loss of black light caused by P type contact layer 43.
Delta doped layer 45 can be arranged in P type contact layer 43 to reduce ohmic contact resistance.Delta doped layer
45 with high density doped with p-type or p-type impurity, to reduce the Ohmic resistance between electrode and P type contact layer 43.Delta adulterates
Layer 45 can form and be of aboutExtremelyThickness.
Can be by the way that the extension pattern layers in substrate 21 to be manufactured the luminous dress of transversary or flip chip structure
Put.Furthermore it is possible to manufacture the light-emitting device of vertical structure by removing substrate 21.
Experimental example 1
In order to check the change of Al content of the light output in the first barrier layer 39b1 near n-contact layer 27,
In addition to the Al content in the first barrier layer, at identical conditions by MOCVD come grown epitaxial layer.Fig. 3 is to describe light
The figure of the relation of the Al content of output and the first barrier layer.Barrier layer in addition to the first barrier layer has identical component.Profit
The Al content of each barrier layer is measured with atom-probe, other barrier layers include about 20% Al.
Reference picture 3, when the Al content of the first barrier layer it is higher than the Al content of other barrier layers 14% when, light-emitting device has
Light output relatively high.On the other hand, when the first barrier layer does not include Al, light-emitting device has relatively low light output.Separately
Outward, when the first barrier layer, comprising about 47% aluminium, (during 27%) higher than the Al content of other barrier layers, light-emitting device sample has
There is the light output fewer than other light-emitting device samples, in described other light-emitting device samples, the first barrier layer has and other
The identical Al content of barrier layer.
Experimental example 2
In order to check that light output changes according to the light of the thickness of the first barrier layer 39b1 near n-contact layer 27, remove
Outside the thickness of the first barrier layer, at identical conditions by MOCVD come grown epitaxial layer.Fig. 4 be describe light output with
The figure of the relation of the thickness of the first barrier layer.Except the first barrier layer and near P type contact layer 43 most end barrier layer in addition to
All barrier layers formed be of aboutThickness, most end barrier layer formed be of aboutRelative thick thickness.This
Outward, the first barrier layer has about 34% Al content, and other barrier layers have about 20% Al content.
Reference picture 4, when the first barrier layer has and other barrier layer identicalsThickness when, light-emitting device has phase
To light output high.On the other hand, when the first barrier layer hasThickness when, light-emitting device has relatively low light defeated
Go out, or even have in the first barrier layerThick thickness in the case of, light-emitting device has relatively low light output.
In near ultraviolet light-emitting device in the related art, n-contact layer is formed by AlGaN.Lighted due to occupying nearly UV
The contact layer of the most of thickness in addition to substrate of device is formed by AlGaN, therefore, it is possible to the light for preventing from being caused by light absorbs
Loss, but because the epitaxial layer crystalline quality in nearly UV light-emitting devices is low, therefore, it is difficult to improve light output or light extraction efficiency.Root
According to embodiment, due to largely or entirely being formed by gallium nitride for n-contact layer and P type contact layer, therefore, it is possible to improve activity
The crystalline quality in region.Therefore, the light-emitting device according to embodiment can be had by preventing by light loss caused by light absorbs
There is the light output of improvement.
Further, since amount of first barrier layer comprising the Al more than other barrier layers, therefore according to the luminous dress of embodiment
Putting can have the light output for further improving.Additionally, near ultraviolet light-emitting device can be by strengthening the knot of N-shaped and P type contact layer
Crystalloid amount is reduced by light loss caused by light absorbs.
It will be apparent to one skilled in the art that without departing from the spirit or scope of the present invention, can be at this
Various modification can be adapted in invention and deformation.Therefore, the invention is intended to cover the modification and variation made to the present invention, as long as they
Fall into the scope of claim and its equivalent.
Claims (11)
1. a kind of light-emitting device, including：
N-contact layer, including GaN layer；
P type contact layer, including GaN layer；And
Active region, including form the barrier layer and trap of the multi-quantum pit structure being arranged between n-contact layer and p-type contact layer
Layer, barrier layer includes Al, and active region is configured to the black light that launch wavelength is 375nm to 390nm,
Wherein, the first barrier layer of barrier layer is disposed closest to n-contact layer, and the first barrier layer is comprising more than other barrier layers
10% to 20% Al simultaneously has than other potential barrier slice widths at least band gap of 0.5eV.
2. light-emitting device as claimed in claim 1, wherein：
Barrier layer in addition to the first barrier layer includes the AlInGaN of the In comprising 15% to 25% Al and 1% or less.
3. light-emitting device as claimed in claim 2, wherein, the first barrier layer include comprising 30% to 40% Al and 1% or
The AlInGaN of less In.
4. light-emitting device as claimed in claim 1, wherein, P type contact layer includes：
First high density doped layer；
Second high density doped layer；And
Low-density doped layer, is arranged between the first high density doped layer and the second high density doped layer.
5. light-emitting device as claimed in claim 4, wherein, low-density doped layer is highly denser than the first high density doped layer and second
Degree doping thickness.
6. light-emitting device as claimed in claim 1, wherein, n-contact layer includes：
First GaN layer；
Second GaN layer；And
Intermediate layer, including sandwich construction and be arranged between the first GaN layer and the second GaN layer.
7. light-emitting device as claimed in claim 6, wherein, intermediate layer includes the AlInN and the GaN layer that are alternately stacked.
8. light-emitting device as claimed in claim 1, the light-emitting device also includes：
Superlattice layer, is arranged between n-contact layer and active region；And
Electron injecting layer, is arranged between superlattice layer and active region, and electron injecting layer includes more miscellaneous than the N-shaped of superlattices floor height
Matter doping density,
Wherein, active region adjoining electron injecting layer.
9. light-emitting device as claimed in claim 8, wherein, superlattice layer includes the InGaN/InGaN structures of order stacking, electricity
Sub- implanted layer includes GaN or InGaN.
10. light-emitting device as claimed in claim 8, the light-emitting device also includes being arranged on n-contact layer and superlattice layer
Between undoped p GaN layer.
11. light-emitting devices as claimed in claim 10, the light-emitting device also includes：
Low-density GaN layer, is arranged between the GaN layer of undoped p and superlattice layer, and low-density GaN layer is with lower than n-contact layer
Density doped with p-type impurity；And
High density GaN layer, is arranged between low-density GaN layer and superlattice layer, and high density GaN layer is with higher than low-density GaN layer
Density doped with p-type impurity.
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| KR1020130025989A KR101997020B1 (en) | 2012-03-29 | 2013-03-12 | Near uv light emitting device |
| PCT/KR2013/002647 WO2013147552A1 (en) | 2012-03-29 | 2013-03-29 | Near uv light emitting device |
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| DE102016112294A1 (en) | 2016-07-05 | 2018-01-11 | Osram Opto Semiconductors Gmbh | Semiconductor layer sequence |
| DE102016117477A1 (en) * | 2016-09-16 | 2018-03-22 | Osram Opto Semiconductors Gmbh | Semiconductor layer sequence |
| DE102017104370A1 (en) | 2017-03-02 | 2018-09-06 | Osram Opto Semiconductors Gmbh | Semiconductor body |
| FR3076399B1 (en) * | 2017-12-28 | 2020-01-24 | Aledia | OPTOELECTRONIC DEVICE COMPRISING THREE-DIMENSIONAL LIGHT EMITTING DIODES |
| JP6927112B2 (en) * | 2018-03-27 | 2021-08-25 | 豊田合成株式会社 | Manufacturing method of semiconductor devices |
| CN110581204A (en) * | 2019-08-28 | 2019-12-17 | 映瑞光电科技(上海)有限公司 | GaN-based light emitting diode epitaxial structure and preparation method thereof |
| CN111403564A (en) * | 2020-03-31 | 2020-07-10 | 厦门乾照半导体科技有限公司 | Infrared light-emitting diode epitaxial structure, chip and manufacturing method thereof |
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| JP3946541B2 (en) * | 2002-02-25 | 2007-07-18 | 三菱電線工業株式会社 | LIGHT EMITTING DEVICE, LIGHTING DEVICE USING THE SAME, AND METHOD FOR MANUFACTURING AND DESIGNING THE LIGHT EMITTING DEVICE |
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| US8563995B2 (en) * | 2008-03-27 | 2013-10-22 | Nitek, Inc. | Ultraviolet light emitting diode/laser diode with nested superlattice |
| KR100957750B1 (en) * | 2008-08-12 | 2010-05-13 | 우리엘에스티 주식회사 | Light generating device |
| KR101017396B1 (en) * | 2008-08-20 | 2011-02-28 | 서울옵토디바이스주식회사 | Light emitting diode having modulation doped layer |
| JP5453780B2 (en) * | 2008-11-20 | 2014-03-26 | 三菱化学株式会社 | Nitride semiconductor |
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