CN116666513A - Semiconductor ultraviolet light-emitting diode - Google Patents

Semiconductor ultraviolet light-emitting diode Download PDF

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Publication number
CN116666513A
CN116666513A CN202310782298.5A CN202310782298A CN116666513A CN 116666513 A CN116666513 A CN 116666513A CN 202310782298 A CN202310782298 A CN 202310782298A CN 116666513 A CN116666513 A CN 116666513A
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layer
equal
electron
quantum well
doping concentration
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CN202310782298.5A
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Inventor
张江勇
王星河
李水清
蔡鑫
胡志勇
张会康
请求不公布姓名
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Anhui Geen Semiconductor Co ltd
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Anhui Geen Semiconductor Co ltd
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Priority to CN202310782298.5A priority Critical patent/CN116666513A/en
Publication of CN116666513A publication Critical patent/CN116666513A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The application provides a semiconductor ultraviolet light emitting diode, which comprises a substrate, an n-type semiconductor, a superlattice layer, a quantum well layer, an electron blocking layer and a p-type semiconductor which are sequentially arranged from bottom to top, wherein an electron matching layer is arranged between the superlattice layer and the quantum well layer, a hole matching layer is arranged between the quantum well layer and the electron blocking layer, the superlattice layer, the electron matching layer, the quantum well layer and the hole matching layer form an electron hole matching control layer, the electron hole matching control layer has a Si doping concentration variation trend and a Mg doping concentration variation trend, and the superlattice layer has an Al component gradient and a thickness gradient. According to the application, the electron concentration injected into the quantum well layer is controlled, and the hole concentration injected into the quantum well layer is enhanced, so that the matching degree of the electron and hole concentrations in the quantum well layer is improved, the overlapping probability of electron-hole wave functions of the quantum well layer is enhanced, and the quantum efficiency and the luminous efficiency of the semiconductor ultraviolet light emitting diode are improved.

Description

Semiconductor ultraviolet light-emitting diode
Technical Field
The application relates to the field of semiconductor photoelectric devices, in particular to a semiconductor ultraviolet light-emitting diode.
Background
The semiconductor element, especially the semiconductor light-emitting element, has a wide wavelength range with adjustable range, high luminous efficiency, energy saving, environmental protection, long service life exceeding 10 ten thousand hours, small size, multiple application scenes, strong designability and other factors, blue light (with the luminous wavelength of 440-460 nm) and green light (with the luminous wavelength of 520-540 nm) are matched with fluorescent powder to gradually replace incandescent lamps and fluorescent lamps, a light source for common household illumination is grown, and new scenes such as an indoor high-resolution display screen, an outdoor display screen, mini-LEDs, micro-LEDs, mobile TV backlights, backlight illumination, street lamps, automobile headlamps, daytime running lamps, in-car atmosphere lamps, flashlights and other application fields are widely used.
The UVA band of the ultraviolet light-emitting diode (with the light-emitting wavelength of 350-420 nm) can be applied to the application fields of 3D curing, nail beautifying curing, phototherapy, skin treatment, plant illumination and the like. The semiconductor ultraviolet light-emitting diode grows by using a sapphire substrate, and has large lattice mismatch and thermal mismatch, so that higher defect density and polarization effect are caused, and the light-emitting efficiency of the semiconductor light-emitting element is reduced; meanwhile, the nitride semiconductor structure has non-central symmetry, stronger spontaneous polarization can be generated along the direction of the c axis, and piezoelectric polarization effects of lattice mismatch are overlapped to form an intrinsic polarization field; the intrinsic polarization field is along the (001) direction, so that the multiple quantum well layer generates stronger quantum confinement Stark effect, the energy band inclination and the electron hole wave function spatial separation are caused, and the radiation recombination efficiency of electron holes is reduced; the hole ionization efficiency of the semiconductor ultraviolet light emitting diode is far lower than the electron ionization efficiency, so that the hole concentration is more than 2 orders of magnitude lower than the electron concentration, excessive electrons can overflow from the multiple quantum wells to the second conductive type semiconductor to generate non-radiative recombination, the hole ionization efficiency is low, holes of the second conductive type semiconductor are difficult to effectively inject into the multiple quantum wells, the hole injection efficiency is low, and the light emitting efficiency of the multiple quantum wells is low. Unlike traditional semiconductor blue light emitting diode, semiconductor ultraviolet light emitting diode has short wavelength and low In content of quantum well, and can not form quantum limiting effect of In component fluctuation In quantum well region, resulting In weak electron hole local effect of quantum well, further aggravating electron hole mismatch.
Disclosure of Invention
In order to solve one of the technical problems, the application provides a semiconductor ultraviolet light emitting diode.
The embodiment of the application provides a semiconductor ultraviolet light emitting diode, which comprises a substrate, an n-type semiconductor, a superlattice layer, a quantum well layer, an electron blocking layer and a p-type semiconductor which are sequentially arranged from bottom to top, wherein an electron matching layer is arranged between the superlattice layer and the quantum well layer, a hole matching layer is arranged between the quantum well layer and the electron blocking layer, the superlattice layer, the electron matching layer, the quantum well layer and the hole matching layer form an electron hole matching control layer, the electron hole matching control layer has a Si doping concentration change trend and a Mg doping concentration change trend, and the superlattice layer has an Al component gradient and a thickness gradient.
Preferably, the trend of the Si doping concentration in the electron hole matching control layer is: decreasing from the electron matching layer to the superlattice layer, wherein the Si doping decreasing angle is alpha: alpha is more than or equal to 30 and less than or equal to 70, and then the superlattice layer is lifted to the n-type semiconductor direction, and the Si doping lifting angle is beta: beta is more than or equal to 40 and less than or equal to 80, and the direction of the vector sub-well layer of the electron matching layer is reduced, and the reduction angle of Si doping is gamma: gamma is more than or equal to 40 and less than or equal to 80.
Preferably, the electron matching layer has a Si doping concentration peak, and the Si doping concentration at the peak position of the Si doping concentration peak is 5E17cm -3 To 5E18cm -3 。
Preferably, the superlattice layer has a Si doping concentration valley with a Si doping concentration of 1E16cm at a valley position -3 To 1E17cm -3 。
Preferably, the Mg doping concentration variation trend in the electron hole matching control layer is: the direction of the vector sub-well layer is reduced from the hole matching layer, and the reducing angle of the Mg doping concentration is theta: θ is more than or equal to 45 and less than or equal to 90.
Preferably, the hole matching layer has a Mg doping concentration peak, and the Mg doping concentration at the peak position of the Mg doping concentration peak is 8E18cm -3 To 8E19cm -3 。
Preferably, the superlattice layer is GaN/Al x Ga 1-x N/Al y Ga 1-y And a periodic structure consisting of N, wherein the period is p: p is more than or equal to 10 and less than or equal to 30;
the superlattice layer has an Al composition gradient: x is more than or equal to 0.3 and less than or equal to 0.6, y is more than or equal to 1;
the superlattice layer has a thickness gradient: gaN thickness of m, al x Ga 1-x N is N, al y Ga 1-y The thickness of N is k, k is more than or equal to 5 and less than or equal to 20, N is more than or equal to 40 and m is more than or equal to 80.
Preferably, the quantum well layer is a periodic structure consisting of a well layer and a barrier layer, and the quantum well layer period is q: q is more than or equal to 5 and less than or equal to 15;
the well layer is any one or any combination of InGaN, alInGaN, alInN, and the thickness of the well layer is 25-40 angstroms;
the barrier layer is any one or any combination of GaN, alInGaN, alGaN, alN, and the thickness is 80-120 angstroms;
the forbidden bandwidth of the well layer is 3.0eV to 3.5eV, and the quantum well layer emits ultraviolet light with the wavelength of 200nm to 420 nm.
Preferably, the n-type semiconductor, electron blocking layer, p-type semiconductor comprises GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP.
Preferably, the substrate comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesium aluminumSpinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
The beneficial effects of the application are as follows: the application sets an electron matching layer between the superlattice layer and the quantum well layer, sets a hole matching layer between the quantum well layer and the electron blocking layer, and forms the superlattice layer, the electron matching layer, the quantum well layer and the hole matching layer into an electron hole matching control layer. By designing the variation trend of Si doping concentration and Mg doping concentration in the electron hole matching control layer and the Al composition gradient and thickness gradient of the superlattice layer, the electron concentration injected into the quantum well layer and the hole concentration injected into the quantum well layer are further controlled, so that the matching degree of the electron and the hole concentration in the quantum well layer is improved, the overlapping probability of electron hole wave functions of the quantum well layer is enhanced, and the quantum efficiency and the luminous efficiency of the semiconductor ultraviolet light emitting diode are improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute a limitation on the application. In the drawings:
fig. 1 is a schematic structural diagram of a semiconductor ultraviolet light emitting diode according to an embodiment of the present application;
fig. 2 is a SIMS secondary ion mass spectrum of a semiconductor violet-to-ultraviolet light emitting diode according to an embodiment of the present application.
Reference numerals:
100. a substrate, 101, an n-type semiconductor, 102, a superlattice layer, 103, a quantum well layer, 104, an electron blocking layer, 105, a p-type semiconductor, 106, an electron matching layer, 107, a hole matching layer, 108, and an electron hole matching control layer.
Detailed Description
In order to make the technical solutions and advantages of the embodiments of the present application more apparent, the following detailed description of exemplary embodiments of the present application is provided in conjunction with the accompanying drawings, and it is apparent that the described embodiments are only some embodiments of the present application and not exhaustive of all embodiments. It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be combined with each other.
As shown in fig. 1 and 2, the present embodiment proposes a semiconductor ultraviolet light emitting diode including a substrate 100, an n-type semiconductor 101, a superlattice layer 102, a quantum well layer 103, an electron blocking layer 104, and a p-type semiconductor 105, which are disposed in this order from bottom to top. An electron matching layer 106 is disposed between the superlattice layer 102 and the quantum well layer 103, and a hole matching layer 107 is disposed between the quantum well layer 103 and the electron blocking layer 104, wherein the superlattice layer 102, the electron matching layer 106, the quantum well layer 103 and the hole matching layer 107 form an electron hole matching control layer 108.
In this embodiment, the electron matching layer 106 is disposed between the superlattice layer 102 and the quantum well layer 103, the hole matching layer 107 is disposed between the quantum well layer 103 and the electron blocking layer 104, and the superlattice layer 102, the electron matching layer 106, the quantum well layer 103, and the hole matching layer 107 constitute an electron-hole matching control layer 108. The electron hole matching control layer 108 has a trend of Si doping concentration and a trend of Mg doping concentration, and the superlattice layer 102 has an Al composition gradient and a thickness gradient.
Specifically, the Si doping concentration variation trend in the electron-hole matching control layer 108 is expressed as: descending from the electron matching layer 106 toward the superlattice layer 102, ascending from the superlattice layer 102 toward the n-type semiconductor 101, and descending from the electron matching layer 106 toward the quantum well layer 103.
More specifically, as shown in fig. 2, the Si doping concentration decreases from the Si doping concentration peak of the electron matching layer 106 to the Si doping concentration valley of the superlattice layer 102, and then increases from the Si doping concentration valley of the superlattice layer 102 toward the n-type semiconductor 101. Wherein the electron matching layer 106 has a Si doping concentration peak, and the Si doping concentration at the peak position of the Si doping concentration peak is 5E17cm -3 To 5E18cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The superlattice layer 102 has a Si doping concentration valley with a Si doping concentration of 1E16cm at a valley position -3 To 1E17cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The Si doping concentration range in the n-type semiconductor 101 is1E19cm -3 To 5E19cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The Si doping drop angle is α: alpha is more than or equal to 30 and less than or equal to 70, and the Si doping rising angle is beta: beta is more than or equal to 40 and less than or equal to 80.
The trend of the change in the Si doping concentration of the electron matching layer 106 toward the vector sub-well layer 103 is a rapid decrease trend, and decreases to the lowest point of the Si doping concentration at the 4 th to 5 th sub-quantum wells (from the n-type semiconductor 101 toward the p-type semiconductor 105 direction), that is: the Si doping concentration decreases from the Si doping concentration peak of the electron matching layer 106 to the Si doping concentration minimum point of the quantum well layer 103. Wherein the electron matching layer 106 has a Si doping concentration peak, and the Si doping concentration at the peak position of the Si doping concentration peak is 5E17cm -3 To 5E18cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The lowest Si doping concentration point of the quantum well layer 103 is 1E16cm -3 To 5E17cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The Si doping drop angle is γ: gamma is more than or equal to 40 and less than or equal to 80.
The Mg doping concentration variation trend in the electron hole matching control layer 108 is expressed as: descending from the hole matching layer 107 toward the quantum well layer 103.
Specifically, as shown in fig. 2, the Mg doping concentration of the hole matching layer 107 in the vector sub-well layer 103 direction has a steep decrease trend. The Mg doping concentration decreases from the Mg doping concentration peak position of the hole matching layer 107 to the Mg doping concentration lowest point of the quantum well layer 103. Wherein the hole matching layer 107 has a Mg doping concentration peak, and the Mg doping concentration at the peak position of the Mg doping concentration peak is 8E18cm -3 To 8E19cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The minimum Mg doping concentration point of the quantum well layer 103 is 1E16cm -3 To 1E17cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The Mg doping concentration decreasing angle is θ: θ is more than or equal to 45 and less than or equal to 90.
In this embodiment, the superlattice layer 102 is GaN/Al x Ga 1-x N/Al y Ga 1-y And a periodic structure consisting of N, wherein the period is p: p is more than or equal to 10 and less than or equal to 30; it has Al composition gradient and thickness gradient, and is characterized in that:
gradient of Al composition: x is more than or equal to 0.3 and less than or equal to 0.6, y is more than or equal to 1;
thickness gradient: gaN thickness of m, al x Ga 1-x N is N, al y Ga 1-y The thickness of N is k, k is more than or equal to 5 and less than or equal to 20, N is more than or equal to 40 and m is more than or equal to 80.
In this embodiment, an electron matching layer 106 is disposed between the superlattice layer 102 and the quantum well layer 103, a hole matching layer 107 is disposed between the quantum well layer 103 and the electron blocking layer 104, and the superlattice layer 102, the electron matching layer 106, the quantum well layer 103, and the hole matching layer 107 are formed into an electron hole matching control layer 108. By designing the variation trend of Si doping concentration and Mg doping concentration in the electron hole matching control layer 108 and the Al composition gradient and thickness gradient of the superlattice layer 102, the electron concentration injected into the quantum well layer 103 and the hole concentration injected into the quantum well layer 103 are further controlled, so that the matching degree of the electron and hole concentration in the quantum well layer 103 is improved, the overlapping probability of the electron hole wave function of the quantum well layer 103 is enhanced, and the quantum efficiency and the luminous efficiency of the semiconductor ultraviolet light emitting diode are improved.
Further, the quantum well layer 103 has a periodic structure composed of a well layer and a barrier layer, and the quantum well layer 103 has a period of q: q is more than or equal to 5 and less than or equal to 15;
the well layer is any one or any combination of InGaN, alInGaN, alInN, and the thickness of the well layer is 25-40 angstroms;
the barrier layer is any one or any combination of GaN, alInGaN, alGaN, alN, and the thickness is 80-120 m;
the forbidden band width of the well layer is 3.0eV to 3.5eV, and the quantum well layer 103 emits ultraviolet light with a wavelength of 200nm to 420 nm.
The n-type semiconductor 101, the electron blocking layer 104, and the p-type semiconductor 105 include GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP.
The substrate 100 includes sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present application without departing from the spirit or scope of the application. Thus, it is intended that the present application also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.

Claims (10)

1. The ultraviolet light-emitting diode is characterized by comprising a substrate, an n-type semiconductor, a superlattice layer, a quantum well layer, an electron blocking layer and a p-type semiconductor which are sequentially arranged from bottom to top, wherein an electron matching layer is arranged between the superlattice layer and the quantum well layer, a hole matching layer is arranged between the quantum well layer and the electron blocking layer, the superlattice layer, the electron matching layer, the quantum well layer and the hole matching layer form an electron hole matching control layer, the electron hole matching control layer has a Si doping concentration variation trend and a Mg doping concentration variation trend, and the superlattice layer has an Al component gradient and a thickness gradient.
2. The semiconductor ultraviolet light emitting diode of claim 1, wherein the trend of the Si doping concentration in the electron hole matching control layer is: decreasing from the electron matching layer to the superlattice layer, wherein the Si doping decreasing angle is alpha: alpha is more than or equal to 30 and less than or equal to 70, and then the superlattice layer is lifted to the n-type semiconductor direction, and the Si doping lifting angle is beta: beta is more than or equal to 40 and less than or equal to 80, and the direction of the vector sub-well layer of the electron matching layer is reduced, and the reduction angle of Si doping is gamma: gamma is more than or equal to 40 and less than or equal to 80.
3. The semiconductor ultraviolet light emitting diode as recited in claim 2, wherein the electron matching layer has a peak of Si doping concentration at a peak position of 5E17cm -3 To 5E18cm -3 。
4. The semiconductor ultraviolet violet light emitting diode of claim 2, wherein the superlattice layer has a Si doping concentration valley having a Si doping concentration of 1E16cm at a valley position -3 To 1E17cm -3 。
5. The semiconductor ultraviolet light emitting diode of claim 1, wherein the Mg doping concentration in the electron hole matching control layer has a trend of: the direction of the vector sub-well layer is reduced from the hole matching layer, and the reducing angle of the Mg doping concentration is theta: θ is more than or equal to 45 and less than or equal to 90.
6. The semiconductor ultraviolet light emitting diode of claim 5, wherein the hole matching layer has a Mg doping concentration peak with a Mg doping concentration of 8E18cm at a peak position of the Mg doping concentration peak -3 To 8E19cm -3 。
7. The semiconductor ultraviolet light emitting diode of claim 1, wherein the superlattice layer is GaN/Al x Ga 1-x N/Al y Ga 1-y And a periodic structure consisting of N, wherein the period is p: p is more than or equal to 10 and less than or equal to 30;
the superlattice layer has an Al composition gradient: x is more than or equal to 0.3 and less than or equal to 0.6, y is more than or equal to 1;
the superlattice layer has a thickness gradient: gaN thickness of m, al x Ga 1-x N is N, al y Ga 1-y The thickness of N is k, k is more than or equal to 5 and less than or equal to 20, N is more than or equal to 40 and m is more than or equal to 80.
8. The semiconductor ultraviolet light emitting diode of claim 1, wherein the quantum well layer is a periodic structure consisting of a well layer and a barrier layer, the quantum well layer period being q: q is more than or equal to 5 and less than or equal to 15;
the well layer is any one or any combination of InGaN, alInGaN, alInN, and the thickness of the well layer is 25-40 angstroms;
the barrier layer is any one or any combination of GaN, alInGaN, alGaN, alN, and the thickness is 80-120 angstroms;
the forbidden bandwidth of the well layer is 3.0eV to 3.5eV, and the quantum well layer emits ultraviolet light with the wavelength of 200nm to 420 nm.
9. The semiconductor ultraviolet light emitting diode as recited in claim 1, wherein the n-type semiconductor, the electron blocking layer, the p-type semiconductor comprises GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP.
10. The semiconductor ultraviolet light emitting diode of claim 1, wherein the substrate comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
CN202310782298.5A 2023-06-29 2023-06-29 Semiconductor ultraviolet light-emitting diode Pending CN116666513A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310782298.5A CN116666513A (en) 2023-06-29 2023-06-29 Semiconductor ultraviolet light-emitting diode

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Application Number Priority Date Filing Date Title
CN202310782298.5A CN116666513A (en) 2023-06-29 2023-06-29 Semiconductor ultraviolet light-emitting diode

Publications (1)

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CN116666513A true CN116666513A (en) 2023-08-29

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