CN116130564B - Semiconductor light-emitting diode - Google Patents
Semiconductor light-emitting diode Download PDFInfo
- Publication number
- CN116130564B CN116130564B CN202310221371.1A CN202310221371A CN116130564B CN 116130564 B CN116130564 B CN 116130564B CN 202310221371 A CN202310221371 A CN 202310221371A CN 116130564 B CN116130564 B CN 116130564B
- Authority
- CN
- China
- Prior art keywords
- layer
- type semiconductor
- quantum well
- semiconductor layer
- well layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 131
- 238000009792 diffusion process Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 230000008859 change Effects 0.000 claims abstract description 5
- 230000004888 barrier function Effects 0.000 claims description 15
- 230000000737 periodic effect Effects 0.000 claims description 7
- 230000003247 decreasing effect Effects 0.000 claims description 5
- 230000007423 decrease Effects 0.000 claims 1
- 239000000969 carrier Substances 0.000 abstract description 3
- 230000007704 transition Effects 0.000 abstract description 3
- 239000011777 magnesium Substances 0.000 description 11
- 230000010287 polarization Effects 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000005428 wave function Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 229910010936 LiGaO2 Inorganic materials 0.000 description 1
- 229910026161 MgAl2O4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000005699 Stark effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- -1 magnesium aluminate Chemical class 0.000 description 1
- 238000001819 mass spectrum Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention provides a semiconductor light-emitting diode, which comprises a substrate, a first n-type semiconductor layer, a second n-type semiconductor layer, a third n-type semiconductor layer, a superlattice layer, a shallow quantum well layer, a quantum well layer and a p-type semiconductor layer which are sequentially arranged from bottom to top; the Si/O concentration ratio among the first n-type semiconductor layer, the second n-type semiconductor layer and the third n-type semiconductor layer is distributed in a U shape, and the Si/O concentration ratio among the second n-type semiconductor layer, the third n-type semiconductor layer and the superlattice layer is distributed in a U shape; the Mg concentration of the P-type semiconductor layer is distributed in a peak shape, the Mg/H concentration ratio in the P-type semiconductor layer changes to the quantum well direction, and the change trend of the Mg/H concentration ratio is changed from less than or equal to 1 to more than or equal to 1. The invention changes the concentration difference of electron and hole carriers of diffusion drift transition in the quantum well layer into less than or equal to 2 orders of magnitude so as to improve the luminous efficiency of the semiconductor light-emitting diode.
Description
Technical Field
The present disclosure relates to the field of semiconductor optoelectronic devices, and more particularly, to a semiconductor light emitting diode.
Background
The semiconductor element, particularly the semiconductor light-emitting element, has a wide wavelength range with adjustable range, high light-emitting efficiency, energy conservation, environmental protection, long service life exceeding 10 ten thousand hours, small size, multiple application scenes, strong designability and other factors, has gradually replaced incandescent lamps and fluorescent lamps, grows a light source for common household illumination, and is widely applied to new scenes, such as application fields of indoor high-resolution display screens, outdoor display screens, mini-LEDs, micro-LEDs, mobile phone television backlights, backlight illumination, street lamps, automobile headlamps, daytime running lights, in-car atmosphere lamps, flashlights and the like.
The conventional nitride semiconductor grows by using a sapphire substrate, has large lattice mismatch and thermal mismatch, causes higher defect density and polarization effect, and reduces the luminous efficiency of the semiconductor luminous element; meanwhile, the hole ionization efficiency of the traditional nitride semiconductor is far lower than the electron ionization efficiency, so that the hole concentration is over 2 orders of magnitude lower than the electron concentration, excessive electrons can overflow from the multiple quantum wells to the second conductive semiconductor to generate non-radiative recombination, the hole ionization efficiency is low, holes of the second conductive semiconductor are difficult to effectively inject into the multiple quantum wells, the hole injection efficiency is low, and the luminous efficiency of the multiple quantum wells is low; the nitride semiconductor structure has non-central symmetry, can generate stronger spontaneous polarization along the direction of the c-axis, and superimposes piezoelectric polarization effects of lattice mismatch to form an intrinsic polarization field; the intrinsic polarization field makes the multi-quantum well layer generate stronger quantum confinement Stark effect along the (001) direction, so that the energy band inclination and the electron hole wave function spatial separation are caused, the radiation recombination efficiency of electron holes is reduced, and the luminous efficiency of the semiconductor luminous element is further influenced.
Disclosure of Invention
In order to solve one of the above problems, the present invention provides a semiconductor light emitting diode.
The embodiment of the invention provides a semiconductor light-emitting diode, which comprises a substrate, a first n-type semiconductor layer, a second n-type semiconductor layer, a third n-type semiconductor layer, a superlattice layer, a shallow quantum well layer, a quantum well layer and a p-type semiconductor layer which are sequentially arranged from bottom to top;
the Si/O concentration ratio among the first n-type semiconductor layer, the second n-type semiconductor layer and the third n-type semiconductor layer is distributed in a U shape, and the Si/O concentration ratio among the second n-type semiconductor layer, the third n-type semiconductor layer and the superlattice layer is distributed in a U shape;
the Mg concentration of the P-type semiconductor layer is distributed in a peak shape, the Mg/H concentration ratio in the P-type semiconductor layer changes to the quantum well direction, and the change trend of the Mg/H concentration ratio is changed from less than or equal to 1 to more than or equal to 1.
Preferably, the ratio of the electron diffusion drift carrier concentration to the hole diffusion drift carrier concentration in the quantum well layer is x: x is more than or equal to 5 and less than or equal to 50.
Preferably, the quantum well layer is a periodic structure composed of a well layer and a barrier layer, and the number of cycles of the quantum well layer is y: y is more than or equal to 5 and less than or equal to 20, and the thickness of the well layer of the quantum well layer is a: 30-40 a, and the barrier layer thickness b of the quantum well layer is as follows: b is more than or equal to 80 and less than or equal to 120.
Preferably, the shallow quantum well layer is a periodic structure composed of a well layer and a barrier layer, and the number of periods of the shallow quantum well layer is z: z is more than or equal to 1 and less than or equal to 30, and the thickness of the well layer of the shallow quantum well layer is c: c is more than or equal to 10 and less than or equal to 40, and the barrier layer thickness d of the shallow quantum well layer is as follows: d is more than or equal to 60 and less than or equal to 120.
Preferably, the superlattice layer is a periodic structure composed of a well layer and a barrier layer, and the number of periods of the superlattice layer is k: k is more than or equal to 1 and less than or equal to 6, and the thickness of the well layer of the superlattice layer is c: c is more than or equal to 10 and less than or equal to 40, and the barrier layer thickness d of the superlattice layer is as follows: d is more than or equal to 80 and less than or equal to 300.
Preferably, the Si/O concentration ratio of the first n-type semiconductor layer, the second n-type semiconductor layer, the third n-type semiconductor layer, and the superlattice layer is 1 or more.
Preferably, the C/O concentration ratio of the third n-type semiconductor layer, the superlattice layer, and the p-type semiconductor layer is greater than or equal to 1, and the C/O concentration ratio of the first n-type semiconductor layer, the second n-type semiconductor layer, the shallow quantum well layer, and the quantum well layer is less than or equal to 1.
Preferably, the C/O concentration ratio among the third n-type semiconductor layer, the superlattice layer, the shallow quantum well layer, the quantum well layer and the p-type semiconductor layer is distributed in a U shape.
Preferably, the Al content of the p-type semiconductor layer is distributed in a V-shape, the V-shaped lowest point of the Al content is near the peak-shaped highest point of the Mg concentration, and the Al content of the quantum well layer, the shallow quantum well layer and the superlattice layer sequentially has a gradient decreasing trend.
Preferably, the In content of the quantum well layer, the shallow quantum well layer and the superlattice layer sequentially has a gradient decreasing trend.
The beneficial effects of the invention are as follows: according to the invention, the first n-type semiconductor layer, the second n-type semiconductor layer, the third n-type semiconductor layer, the superlattice layer and the quantum well layer form a diffusion drift carrier balance structure by designing Si/O concentration proportion distribution among the first n-type semiconductor layer, the second n-type semiconductor layer, the third n-type semiconductor layer and the superlattice layer and Mg/H concentration proportion change in the P-type semiconductor layer. The concentration difference of electron and hole carriers of diffusion drift transition in the quantum well layer of the structure is changed from more than 2 number levels of a conventional light-emitting diode to less than or equal to 2 number levels, so that the overlapping probability and the distribution uniformity of electron and hole wave functions of the quantum well layer are improved, the radiation recombination probability and the luminous efficiency of electrons and holes in the quantum well layer are improved, and the luminous efficiency of a semiconductor light-emitting diode is further improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute an undue limitation to the application. In the drawings:
fig. 1 is a schematic structural diagram of a semiconductor light emitting diode according to an embodiment of the present invention;
FIG. 2 is a SIMS secondary ion mass spectrum of a semiconductor light emitting diode according to an embodiment of the present invention;
fig. 3 is a partial enlarged view of fig. 2.
Reference numerals:
100. a substrate, 101, a first n-type semiconductor layer, 102, a second n-type semiconductor layer, 103, a third n-type semiconductor layer, 104, a superlattice layer, 105, a shallow quantum well layer, 106, a quantum well layer, 107, a p-type semiconductor layer.
Detailed Description
In order to make the technical solutions and advantages of the embodiments of the present application more apparent, the following detailed description of exemplary embodiments of the present application is given with reference to the accompanying drawings, and it is apparent that the described embodiments are only some of the embodiments of the present application and not exhaustive of all the embodiments. It should be noted that, in the case of no conflict, the embodiments and features in the embodiments may be combined with each other.
As shown in fig. 1 to 3, the present embodiment proposes a semiconductor light emitting diode including a substrate 100, a first n-type semiconductor layer 101, a second n-type semiconductor layer 102, a third n-type semiconductor layer 103, a superlattice layer 104, a shallow quantum well layer 105, a quantum well layer 106, and a p-type semiconductor layer 107, which are disposed in this order from bottom to top.
Specifically, as shown in fig. 2 and 3, in the present embodiment, the Si/O concentration ratio between the first n-type semiconductor layer 101, the second n-type semiconductor layer 102, and the third n-type semiconductor layer 103 is in a U-shaped distribution, the Si/O concentration ratio between the second n-type semiconductor layer 102, the third n-type semiconductor layer 103, and the superlattice layer 104 is in a U-shaped distribution, and two sets of Si/O concentration ratios form a double U-shaped distribution structure; the Mg concentration of the p-type semiconductor layer 107 is spike-like in distribution, and the Mg/H concentration ratio in the p-type semiconductor layer 107 changes toward the quantum well direction, with the trend of the Mg/H concentration ratio change from less than or equal to 1 to greater than or equal to 1.
The present embodiment makes the first n-type semiconductor layer 101, the second n-type semiconductor layer 102, the third n-type semiconductor layer 103, the superlattice layer 104, and the quantum well layer 106 constitute a diffusion drift carrier balance structure by designing the Si/O concentration ratio distribution between the first n-type semiconductor layer 101, the second n-type semiconductor layer 102, the third n-type semiconductor layer 103, and the superlattice layer 104, and the Mg/H concentration ratio variation in the p-type semiconductor layer 107. The concentration difference of the electron and hole carriers of the diffusion drift transition in the quantum well layer 106 of the structure is changed from more than 2 number levels of the conventional light emitting diode to 2 orders of magnitude or less, and the ratio of the electron diffusion drift carrier concentration to the hole diffusion drift carrier concentration in the quantum well layer 106 is x: x is more than or equal to 5 and less than or equal to 50, so that the overlapping probability and the distribution uniformity of the electron and hole wave functions of the quantum well layer 106 are improved, the radiation recombination probability and the luminous efficiency of the electron and the hole in the quantum well layer 106 are improved, and the luminous efficiency of the semiconductor light-emitting diode is further improved.
Further, in the present embodiment, the quantum well layer 106, the shallow quantum well layer 105, and the superlattice layer 104 are each periodic structures composed of a well layer and a barrier layer. The number of cycles of the quantum well layer 106 is y: y is more than or equal to 5 and less than or equal to 20, and the thickness of the well layer of the quantum well layer 106 is a:30 a.ltoreq.40 a.ltoreq.m, barrier layer thickness b of the quantum well layer 106: b is more than or equal to 80 and less than or equal to 120. The number of cycles of the shallow quantum well layer 105 is z: z is more than or equal to 1 and less than or equal to 30, and the well layer thickness of the shallow quantum well layer 105 is c: barrier layer thickness d of shallow quantum well layer 105 is 10 a.ltoreq.c.ltoreq.40 a.m: d is more than or equal to 60 and less than or equal to 120. The number of cycles of the superlattice layer 104 is k: k is more than or equal to 1 and less than or equal to 6, and the thickness of the well layer of the superlattice layer 104 is c: the barrier layer thickness d of the superlattice layer 104 is 10 Emi.ltoreq.c.ltoreq.40 Emi: d is more than or equal to 80 and less than or equal to 300.
Further, the Si/O concentration ratio of the first n-type semiconductor layer 101, the second n-type semiconductor layer 102, the third n-type semiconductor layer 103, and the superlattice layer 104 is 1 or more. The C/O concentration ratio of the third n-type semiconductor layer 103, the superlattice layer 104, and the p-type semiconductor layer 107 is greater than or equal to 1, and the C/O concentration ratio of the first n-type semiconductor layer 101, the second n-type semiconductor layer 102, the shallow quantum well layer 105, and the quantum well layer 106 is less than or equal to 1. The C/O concentration ratio among the third n-type semiconductor layer 103, the superlattice layer 104, the shallow quantum well layer 105, the quantum well layer 106, and the p-type semiconductor layer 107 is in a U-shaped distribution. The C/O concentration ratio among the third n-type semiconductor layer 103, the second n-type semiconductor layer 102, and the first n-type semiconductor layer 101 is in a single Z-type distribution.
Meanwhile, in this embodiment, the Al content of the p-type semiconductor layer 107 is in V-type distribution, and the V-type lowest point of the Al content is near the peak-like highest point of the Mg concentration, and the Al content of the quantum well layer 106, the shallow quantum well layer 105, and the superlattice layer 104 sequentially has a gradient decreasing trend. The In content of the quantum well layer 106, the shallow quantum well layer 105, and the superlattice layer 104 sequentially has a gradient decreasing trend.
In this embodiment, the first n-type semiconductor layer 101, the second n-type semiconductor layer 102, the third n-type semiconductor layer 103, the shallow quantum well layer 105, the quantum well layer 106, and the p-type semiconductor layer 107 are any one or any combination of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga O3 and BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP.
The substrate 100 includes any one of sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, sapphire/SiNx, magnesium aluminate spinel MgAl2O4, mgO, znO, zrB2, liAlO2, and LiGaO2 composite substrates.
It will be apparent to those skilled in the art that various modifications and variations can be made in the present application without departing from the spirit or scope of the application. Thus, if such modifications and variations of the present application fall within the scope of the claims and the equivalents thereof, the present application is intended to cover such modifications and variations.
Claims (10)
1. A semiconductor light-emitting diode is characterized by comprising a substrate, a first n-type semiconductor layer, a second n-type semiconductor layer, a third n-type semiconductor layer, a superlattice layer, a shallow quantum well layer, a quantum well layer and a p-type semiconductor layer which are sequentially arranged from bottom to top;
the Si/O concentration ratio among the first n-type semiconductor layer, the second n-type semiconductor layer and the third n-type semiconductor layer is distributed in a U shape, and the Si/O concentration ratio among the second n-type semiconductor layer, the third n-type semiconductor layer and the superlattice layer is distributed in a U shape;
the Mg concentration of the p-type semiconductor layer is distributed in a peak shape, the Mg/H concentration ratio in the p-type semiconductor layer changes to the quantum well direction, and the change trend of the Mg/H concentration ratio is changed from less than or equal to 1 to more than or equal to 1.
2. The semiconductor light emitting diode of claim 1, wherein a ratio of electron diffusion drift carrier concentration to hole diffusion drift carrier concentration in the quantum well layer is x, 5.ltoreq.x.ltoreq.50.
3. The semiconductor light-emitting diode according to claim 1 or 2, wherein the quantum well layer has a periodic structure composed of a well layer and a barrier layer, the number of cycles of the quantum well layer is y, 5.ltoreq.y.ltoreq.20, the well layer thickness of the quantum well layer is a, 30.ltoreq.a.ltoreq.40 meter, and the barrier layer thickness b, 80.ltoreq.b.ltoreq.120 meter of the quantum well layer.
4. The semiconductor light-emitting diode according to claim 1, wherein the shallow quantum well layer has a periodic structure composed of a well layer and a barrier layer, wherein the number of periods of the shallow quantum well layer is z, z is 1-30, the thickness of the well layer of the shallow quantum well layer is c, c is 10-40 a, and d is 60-120 a.
5. The semiconductor light-emitting diode according to claim 1, wherein the superlattice layer has a periodic structure composed of a well layer and a barrier layer, the number of periods of the superlattice layer is k, 1-6, the thickness of the well layer of the superlattice layer is c, 10-40 a, and the thickness of the barrier layer of the superlattice layer d, 80-300 a.
6. The semiconductor light-emitting diode according to claim 1, wherein Si/O concentration ratios of the first n-type semiconductor layer, the second n-type semiconductor layer, the third n-type semiconductor layer, and the superlattice layer are each 1 or more.
7. The semiconductor light-emitting diode according to claim 1, wherein a C/O concentration ratio of the third n-type semiconductor layer, the superlattice layer, and the p-type semiconductor layer is greater than or equal to 1, and a C/O concentration ratio of the first n-type semiconductor layer, the second n-type semiconductor layer, the shallow quantum well layer, and the quantum well layer is less than or equal to 1.
8. The semiconductor light emitting diode according to claim 1 or 7, wherein a C/O concentration ratio among the third n-type semiconductor layer, the superlattice layer, the shallow quantum well layer, the quantum well layer, and the p-type semiconductor layer is in a U-shape distribution.
9. The semiconductor light-emitting diode according to claim 1, wherein the Al content of the p-type semiconductor layer is distributed in a V-shape, and a V-shape lowest point of the Al content is near a peak-like highest point of the Mg concentration, and the Al content of the quantum well layer, the shallow quantum well layer, and the superlattice layer is in a gradient decreasing trend in this order.
10. The semiconductor light emitting diode of claim 1, wherein the In content of the quantum well layer, the shallow quantum well layer, and the superlattice layer sequentially decreases In a gradient.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310221371.1A CN116130564B (en) | 2023-03-09 | 2023-03-09 | Semiconductor light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310221371.1A CN116130564B (en) | 2023-03-09 | 2023-03-09 | Semiconductor light-emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116130564A CN116130564A (en) | 2023-05-16 |
| CN116130564B true CN116130564B (en) | 2023-12-19 |
Family
ID=86304734
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310221371.1A Active CN116130564B (en) | 2023-03-09 | 2023-03-09 | Semiconductor light-emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116130564B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1802757A (en) * | 2003-10-15 | 2006-07-12 | Lg伊诺特有限公司 | Nitride semiconductor light emitting device |
| CN218069879U (en) * | 2022-05-17 | 2022-12-16 | 江西兆驰半导体有限公司 | Light-emitting diode epitaxial wafer and light-emitting diode |
| CN115483324A (en) * | 2022-09-23 | 2022-12-16 | 厦门士兰明镓化合物半导体有限公司 | Semiconductor light emitting element and method for manufacturing the same |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100662191B1 (en) * | 2004-12-23 | 2006-12-27 | 엘지이노텍 주식회사 | Nitride semiconductor LED and fabrication method thereof |
| JP6001446B2 (en) * | 2012-12-28 | 2016-10-05 | 株式会社東芝 | Semiconductor light emitting device and manufacturing method thereof |
| JP6573076B2 (en) * | 2016-02-01 | 2019-09-11 | パナソニック株式会社 | UV light emitting device |
| CN116190510A (en) * | 2023-03-09 | 2023-05-30 | 安徽格恩半导体有限公司 | Semiconductor light-emitting diode |
| CN116230819A (en) * | 2023-03-09 | 2023-06-06 | 安徽格恩半导体有限公司 | Semiconductor light-emitting diode |
-
2023
- 2023-03-09 CN CN202310221371.1A patent/CN116130564B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1802757A (en) * | 2003-10-15 | 2006-07-12 | Lg伊诺特有限公司 | Nitride semiconductor light emitting device |
| CN218069879U (en) * | 2022-05-17 | 2022-12-16 | 江西兆驰半导体有限公司 | Light-emitting diode epitaxial wafer and light-emitting diode |
| CN115483324A (en) * | 2022-09-23 | 2022-12-16 | 厦门士兰明镓化合物半导体有限公司 | Semiconductor light emitting element and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN116130564A (en) | 2023-05-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN116190510A (en) | Semiconductor light-emitting diode | |
| CN116230819A (en) | Semiconductor light-emitting diode | |
| CN114843384A (en) | Epitaxial structure of light emitting diode and preparation method thereof | |
| CN116632128A (en) | Semiconductor light-emitting element | |
| CN219371055U (en) | Semiconductor light-emitting diode | |
| CN114497304A (en) | Semiconductor element | |
| CN117637939A (en) | Semiconductor light-emitting element of Mini-Micro LED | |
| CN116526296A (en) | Semiconductor ultraviolet light-emitting diode | |
| CN116666509A (en) | Semiconductor light-emitting diode | |
| CN116130564B (en) | Semiconductor light-emitting diode | |
| CN219917198U (en) | Semiconductor light-emitting diode | |
| CN114497334A (en) | Semiconductor light-emitting element with hot carrier cooling layer | |
| CN220065727U (en) | Semiconductor light-emitting element | |
| CN219677771U (en) | Semiconductor ultraviolet light-emitting diode | |
| CN117525227A (en) | Gallium nitride-based semiconductor light-emitting chip | |
| CN117410404A (en) | Semiconductor light-emitting chip with three-dimensional hole air layer | |
| CN116581218A (en) | Semiconductor light-emitting element | |
| CN117374180A (en) | Gallium nitride-based semiconductor light-emitting element | |
| CN117637940A (en) | Compound semiconductor light-emitting element | |
| CN117712248A (en) | Semiconductor light-emitting element | |
| CN117525228A (en) | Semiconductor ultraviolet, ultraviolet and deep ultraviolet light-emitting diode | |
| CN117613160A (en) | Gallium nitride-based semiconductor light-emitting element | |
| CN117976789A (en) | Gallium nitride-based semiconductor light-emitting element | |
| CN116682906A (en) | Semiconductor light-emitting element | |
| CN116469975A (en) | Semiconductor light-emitting element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |