CN117712248A - Semiconductor light-emitting element - Google Patents
Semiconductor light-emitting element Download PDFInfo
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- CN117712248A CN117712248A CN202410010256.4A CN202410010256A CN117712248A CN 117712248 A CN117712248 A CN 117712248A CN 202410010256 A CN202410010256 A CN 202410010256A CN 117712248 A CN117712248 A CN 117712248A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 229910052594 sapphire Inorganic materials 0.000 claims description 17
- 239000010980 sapphire Substances 0.000 claims description 17
- 239000002131 composite material Substances 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 7
- 229910010093 LiAlO Inorganic materials 0.000 claims description 4
- 229910020068 MgAl Inorganic materials 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 230000000737 periodic effect Effects 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052596 spinel Inorganic materials 0.000 claims description 4
- 239000011029 spinel Substances 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 230000010287 polarization Effects 0.000 description 5
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000005699 Stark effect Effects 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001819 mass spectrum Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
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Abstract
The invention provides a semiconductor light-emitting element, which comprises a substrate, an n-type semiconductor layer, a quantum well layer and a p-type semiconductor layer which are sequentially arranged from bottom to top, wherein the quantum well layer comprises a first sub-quantum well layer and a second sub-quantum well layer, and the first sub-quantum well layer and the second sub-quantum well layer have In element distribution, al element distribution, si doping concentration distribution, mg doping concentration distribution, C element distribution, H element distribution and O element distribution characteristics. The invention can improve the ratio of WPE photoelectric conversion efficiency and thermal state cold state efficiency of the quantum well layer.
Description
Technical Field
The present disclosure relates to the field of semiconductor optoelectronic devices, and more particularly, to a semiconductor light emitting device.
Background
The semiconductor element, particularly the semiconductor light-emitting element, has a wide wavelength range with adjustable range, high light-emitting efficiency, energy conservation, environmental protection, long service life exceeding 10 ten thousand hours, small size, multiple application scenes, strong designability and other factors, has gradually replaced incandescent lamps and fluorescent lamps, grows a light source for common household illumination, and is widely applied to new scenes, such as application fields of indoor high-resolution display screens, outdoor display screens, mini-LEDs, micro-LEDs, mobile phone television backlights, backlight illumination, street lamps, automobile headlamps, daytime running lights, in-car atmosphere lamps, flashlights and the like.
The conventional nitride semiconductor grows by using a sapphire substrate, has large lattice mismatch and thermal mismatch, causes higher defect density and polarization effect, generates a non-radiative recombination center, and reduces the luminous efficiency of the semiconductor luminous element; meanwhile, the hole ionization efficiency of the traditional nitride semiconductor is far lower than the electron ionization efficiency, so that the hole concentration is lower than the electron concentration by more than 2 orders of magnitude, excessive electrons can overflow from the multiple quantum well layer to the second conductive semiconductor to generate non-radiative recombination, the hole ionization efficiency is low, holes of the second conductive semiconductor are difficult to be effectively injected into the multiple quantum well layer, the hole injection efficiency of the multiple quantum well layer is low, and the luminous efficiency of the multiple quantum well layer is low; the nitride semiconductor structure has non-central symmetry, can generate stronger spontaneous polarization along the direction of the c-axis, and superimposes piezoelectric polarization effects of lattice mismatch to form an intrinsic polarization field; the intrinsic polarization field makes the multi-quantum well layer generate stronger quantum confinement Stark effect along the (001) direction, so that the energy band inclination and the electron hole wave function spatial separation are caused, the radiation recombination efficiency of electron holes is reduced, and the luminous efficiency of the semiconductor luminous element is further influenced.
Disclosure of Invention
In order to solve one of the above problems, the present invention provides a semiconductor light emitting device.
The embodiment of the invention provides a semiconductor light-emitting element, which comprises a substrate, an n-type semiconductor layer, a quantum well layer and a p-type semiconductor layer which are sequentially arranged from bottom to top, wherein the quantum well layer comprises a first sub-quantum well layer and a second sub-quantum well layer, and the first sub-quantum well layer and the second sub-quantum well layer have In element distribution, al element distribution, si doping concentration distribution, mg doping concentration distribution, C element distribution, H element distribution and O element distribution characteristics.
Preferably, the In element distribution of the first sub-quantum well layer and the second sub-quantum well layer is In sine function or cosine function curve distribution.
Preferably, the Al element distribution combination of the first sub-quantum well layer and the second sub-quantum well layer is a function y= (e) x +e -x )/(e x -e -x ) Is a first quadrant curve distribution of (c).
Preferably, the Si doping concentration of the first sub-quantum well layer is distributed in a double-break-point nonlinear broken-line function curve, and the Si doping concentration of the second sub-quantum well layer is distributed in a function y=x+m/e x (m>0) Is distributed in the third quadrant of the graph.
Preferably, the Mg doping concentration profile combination of the first sub-quantum well layer and the second sub-quantum well layer is distributed as a function y=arc cosx curve.
Preferably, the combination of the C element concentration distribution and the O element concentration distribution of the first sub-quantum well layer and the second sub-quantum well layer is in a y=arc cotx curve distribution.
Preferably, the combination of the H element concentration distribution of the first sub-quantum well layer and the second sub-quantum well layer is an exponential function y=a x (0<a<1) A curve distribution.
Preferably, the first sub quantum well layer and the second sub quantum well layer are both periodic structures consisting of a well layer and a barrier layer, and the number of periods of the first sub quantum well layer is k: k is more than or equal to 1 and less than or equal to 15; the cycle number of the second sub quantum well layer is t: t is more than or equal to 1 and less than or equal to 15;
the barrier layer thickness of the first sub quantum well layer and the second sub quantum well layer is 10 to 300 meter, and the well layer thickness is 10 to 100 meter;
the first sub-quantum well layer and the second sub-quantum well layer are composed of any two or more than two kinds of InGaN, gaN, alGaN, alInGaN, alInN, alN.
Preferably, the n-type semiconductor layer and the p-type semiconductor layer are any one or any combination of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, the thickness of the n-type semiconductor layer is 50nm to 50000nm, and the thickness of the p-type semiconductor layer is 10nm to 500nm.
Preferably, the substrate comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
The beneficial effects of the invention are as follows: according to the invention, the quantum well layer In the semiconductor light-emitting element is arranged to be of a double-layer structure, and In element distribution, al element distribution, si doping concentration distribution, mg doping concentration distribution, C element distribution, H element distribution and O element distribution In the first sub-quantum well layer and the second sub-quantum well layer are specially designed, so that the WPE photoelectric conversion efficiency of the quantum well layer is improved, the WPE photoelectric conversion efficiency is improved from 60-70% to 70-90%, and the ratio of thermal state to cold state efficiency is improved from 80-90% to 90-99%.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute an undue limitation to the application. In the drawings:
fig. 1 is a schematic structural view of a semiconductor light emitting device according to embodiment 1 of the present invention;
fig. 2 is a schematic structural diagram of a semiconductor light emitting device according to embodiment 2 of the present invention;
fig. 3 is a SIMS secondary ion mass spectrum of a semiconductor light-emitting element according to embodiment 2 of the present invention;
fig. 4 is a transmission electron microscope TEM image of a quantum well layer of the semiconductor light emitting device according to embodiment 2 of the present invention.
Reference numerals:
100. a substrate, 101, an n-type semiconductor layer, 102, a quantum well layer, 103, a p-type semiconductor layer;
102a, a first sub-quantum well layer, 102b, a second sub-quantum well layer.
Detailed Description
In order to make the technical solutions and advantages of the embodiments of the present application more apparent, the following detailed description of exemplary embodiments of the present application is given with reference to the accompanying drawings, and it is apparent that the described embodiments are only some of the embodiments of the present application and not exhaustive of all the embodiments. It should be noted that, in the case of no conflict, the embodiments and features in the embodiments may be combined with each other.
Example 1
As shown In fig. 1, the present embodiment proposes a semiconductor light emitting element including a substrate 100, an n-type semiconductor layer 101, a quantum well layer 102, and a p-type semiconductor layer 103, which are disposed In this order from bottom to top, wherein the quantum well layer 102 has In element distribution, al element distribution, si doping concentration distribution, mg doping concentration distribution, C element distribution, H element distribution, and O element distribution characteristics.
Specifically, in this embodiment, the semiconductor light-emitting element is provided with a substrate 100, an n-type semiconductor layer 101, a quantum well layer 102, and a p-type semiconductor layer 103 in this order from bottom to top. The quantum well layer 102 is composed of any two or more of InGaN, gaN, alGaN, alInGaN, alInN, alN. The quantum well layer 102 has a periodic structure composed of a well layer and a barrier layer. In this embodiment, the quantum well layer 102 also has specific In element distribution, al element distribution, si doping concentration distribution, mg doping concentration distribution, C element distribution, H element distribution, and O element distribution characteristics. The element distribution characteristics can effectively improve the performance of the semiconductor light-emitting element.
Further, the n-type semiconductor layer 101 and the p-type semiconductor layer 103 are any one or any combination of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN. Wherein the thickness of the n-type semiconductor layer 101 is 50nm to 50000nm. The thickness of the p-type semiconductor layer 103 is 10nm to 500nm.
The substrate 100 includes sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate 100, sapphire/AlN composite substrate 100, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any of the composite substrates 100.
Example 2
As shown in fig. 2 to 4, the present embodiment proposes a semiconductor light emitting element including a substrate 100, an n-type semiconductor layer 101, a quantum well layer 102, and a p-type semiconductor layer 103, which are sequentially disposed from bottom to top, wherein the quantum well layer 102 specifically further includes a first sub-quantum well layer 102a and a second sub-quantum well layer 102b.
Specifically, in this embodiment, the semiconductor light-emitting element is provided with a substrate 100, an n-type semiconductor layer 101, a quantum well layer 102, and a p-type semiconductor layer 103 in this order from bottom to top. The quantum well layer 102 is a double-layer structure and is composed of a first sub-quantum well layer 102a and a second sub-quantum well layer 102b, wherein the first sub-quantum well layer 102a is located below the second sub-quantum well layer 102b. The first sub-quantum well layer 102a and the second sub-quantum well layer 102b have In element distribution, al element distribution, si doping concentration distribution, mg doping concentration distribution, C element distribution, H element distribution, and O element distribution characteristics.
More specifically, in the present embodiment, in element distribution, al element distribution, si doping concentration distribution, mg doping concentration distribution, C element distribution, H element distribution, and O element distribution of the first sub-quantum well layer 102a and the second sub-quantum well layer 102b In the semiconductor light emitting element are as follows:
in element distribution:
the In element distribution of the first sub quantum well layer 102a and the second sub quantum well layer 102b is In sine function or cosine function curve distribution;
for example, the distribution of In elements In the first sub-quantum well layer 102a is y=asin (bx+c) +d, and the distribution of In elements In the second sub-quantum well layer 102b is y=esin (fx+g) +h, where: a is less than or equal to E, and D is less than or equal to H.
Distribution of Al element:
al element distribution combinations of the first sub-quantum well layer 102a and the second sub-quantum well layer 102b are a function y= (e) x +e -x )/(e x -e -x ) Is a first quadrant curve distribution of (c).
Si doping concentration profile:
the Si doping concentration of the first sub quantum well layer 102a is distributed in a double-break nonlinear broken line function curve;
the Si doping concentration of the second sub-quantum well layer 102b is a function y=x+m/e x (m>0) Is distributed in the third quadrant of the graph.
Mg doping concentration profile:
the Mg doping concentration profile combination of the first sub-quantum well layer 102a and the second sub-quantum well layer 102b is a profile of a function y=arc cosx.
Concentration distribution of C element:
the combination of the C element concentration distribution of the first sub-quantum well layer 102a and the second sub-quantum well layer 102b is in a y=arc cotx curve distribution.
Concentration distribution of O element:
the combination of the O element concentration distribution of the first sub-quantum well layer 102a and the second sub-quantum well layer 102b is in a y=arc cotx curve distribution.
Concentration distribution of H element:
the combination of the H element concentration profiles of the first sub-quantum well layer 102a and the second sub-quantum well layer 102b is an exponential function y=a x (0<a<1) A curve distribution.
In the present embodiment, the quantum well layer 102 In the semiconductor light emitting element is configured as a double-layer structure, and the In element distribution, the Al element distribution, the Si doping concentration distribution, the Mg doping concentration distribution, the C element distribution, the H element distribution, and the O element distribution In the first sub-quantum well layer 102a and the second sub-quantum well layer 102b are specifically designed, so that the WPE photoelectric conversion efficiency of the quantum well layer is improved, the WPE photoelectric conversion efficiency is improved from 60 to 70% to 90%, and the thermal state cold state efficiency ratio is improved from 80 to 90% to 90 to 99%.
Further, the first sub-quantum well layer 102a and the second sub-quantum well layer 102b are both periodic structures composed of a well layer and a barrier layer, and the number of periods of the first sub-quantum well layer 102a is k: k is more than or equal to 1 and less than or equal to 15; the number of cycles of the second sub-quantum well layer 102b is t: t is more than or equal to 1 and less than or equal to 15. The barrier layer thickness of the first sub-quantum well layer 102a and the second sub-quantum well layer 102b is 10 to 300 a/m, and the well layer thickness is 10 to 100 a/m.
The first sub-quantum well layer 102a and the second sub-quantum well layer 102b are composed of any two or more kinds of InGaN, gaN, alGaN, alInGaN, alInN, alN.
The n-type semiconductor layer 101 and the p-type semiconductor layer 103 are any one or any combination of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN. The thickness of the n-type semiconductor layer 101 is 50nm to 50000nm. The thickness of the p-type semiconductor layer 103 is 10nm to 500nm.
The substrate 100 includes sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
It will be apparent to those skilled in the art that various modifications and variations can be made in the present application without departing from the spirit or scope of the application. Thus, if such modifications and variations of the present application fall within the scope of the claims and the equivalents thereof, the present application is intended to cover such modifications and variations.
Claims (10)
1. The semiconductor light-emitting element comprises a substrate, an n-type semiconductor layer, a quantum well layer and a p-type semiconductor layer which are sequentially arranged from bottom to top, and is characterized In that the quantum well layer comprises a first sub-quantum well layer and a second sub-quantum well layer, and the first sub-quantum well layer and the second sub-quantum well layer have In element distribution, al element distribution, si doping concentration distribution, mg doping concentration distribution, C element distribution, H element distribution and O element distribution characteristics.
2. The semiconductor light-emitting element according to claim 1, wherein In element distribution of the first sub-quantum well layer and the second sub-quantum well layer is In a sine function or cosine function curve distribution.
3. The semiconductor light emitting element according to claim 1, wherein Al element distribution combinations of the first and second sub-quantum well layers are a function y= (e) x +e -x )/(e x -e -x ) Is a first quadrant curve distribution of (c).
4. The semiconductor light emitting device of claim 1 wherein the Si doping concentration of the first sub-quantum well layer is distributed as a double-break nonlinear polyline function curve and the Si doping concentration of the second sub-quantum well layer is distributed as a function y = x + m/e x (m>0) Is distributed in the third quadrant of the graph.
5. The semiconductor light emitting element of claim 1 wherein the combination of Mg doping concentration profiles of the first and second sub-quantum well layers is a function y = arc cosx profile.
6. The semiconductor light-emitting element according to claim 1, wherein a combination of C element concentration distribution and O element concentration distribution of the first sub-quantum well layer and the second sub-quantum well layer is in a y=arc cotx curve distribution.
7. The semiconductor light emitting device according to claim 1, wherein a combination of H element concentration profiles of the first and second sub-quantum well layers is an exponential function y=a x (0<a<1) A curve distribution.
8. The semiconductor light-emitting device according to claim 1, wherein the first sub-quantum well layer and the second sub-quantum well layer each have a periodic structure composed of a well layer and a barrier layer, and wherein the number of cycles of the first sub-quantum well layer is k: k is more than or equal to 1 and less than or equal to 15; the cycle number of the second sub quantum well layer is t: t is more than or equal to 1 and less than or equal to 15;
the barrier layer thickness of the first sub quantum well layer and the second sub quantum well layer is 10 to 300 meter, and the well layer thickness is 10 to 100 meter;
the first sub-quantum well layer and the second sub-quantum well layer are composed of any two or more than two kinds of InGaN, gaN, alGaN, alInGaN, alInN, alN.
9. The semiconductor light-emitting element according to claim 1, wherein the n-type semiconductor layer and the p-type semiconductor layer are any one or any combination of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, wherein the n-type semiconductor layer has a thickness of 50nm to 50000nm, and wherein the p-type semiconductor layer has a thickness of 10nm to 500nm.
10. The semiconductor light emitting element of claim 1 wherein the substrate comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410010256.4A CN117712248A (en) | 2024-01-04 | 2024-01-04 | Semiconductor light-emitting element |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410010256.4A CN117712248A (en) | 2024-01-04 | 2024-01-04 | Semiconductor light-emitting element |
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| CN117712248A true CN117712248A (en) | 2024-03-15 |
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| CN202410010256.4A Pending CN117712248A (en) | 2024-01-04 | 2024-01-04 | Semiconductor light-emitting element |
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