CN117637940A - Compound semiconductor light-emitting element - Google Patents
Compound semiconductor light-emitting element Download PDFInfo
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- CN117637940A CN117637940A CN202311460951.2A CN202311460951A CN117637940A CN 117637940 A CN117637940 A CN 117637940A CN 202311460951 A CN202311460951 A CN 202311460951A CN 117637940 A CN117637940 A CN 117637940A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 61
- 150000001875 compounds Chemical class 0.000 title claims abstract description 25
- 238000009826 distribution Methods 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 230000004888 barrier function Effects 0.000 claims description 20
- 229910052594 sapphire Inorganic materials 0.000 claims description 13
- 239000010980 sapphire Substances 0.000 claims description 13
- 239000002131 composite material Substances 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910010093 LiAlO Inorganic materials 0.000 claims description 3
- 229910020068 MgAl Inorganic materials 0.000 claims description 3
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910021389 graphene Inorganic materials 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052596 spinel Inorganic materials 0.000 claims description 3
- 239000011029 spinel Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 6
- 230000005428 wave function Effects 0.000 abstract description 4
- 239000000969 carrier Substances 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 230000010287 polarization Effects 0.000 description 5
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000003917 TEM image Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000005699 Stark effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001819 mass spectrum Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention provides a compound semiconductor light-emitting element, which comprises a substrate, an n-type semiconductor layer, a quantum well and a p-type semiconductor layer, wherein the substrate, the n-type semiconductor layer, the quantum well and the p-type semiconductor layer are sequentially arranged from bottom to top, the quantum well comprises a first sub-quantum well, a second sub-quantum well and a third sub-quantum well, the first sub-quantum well, the second sub-quantum well and the third sub-quantum well are sequentially arranged from bottom to top, and the first sub-quantum well, the second sub-quantum well and the third sub-quantum well have different lattice constant distributions. According to the invention, through the multi-layer quantum well structure of the quantum well and setting different lattice constant distribution for the multi-layer quantum well, the lattice mismatch degree of the quantum well can be effectively reduced, the quantum confinement effect of the quantum well on carriers is improved, the overlapping probability of electron hole wave functions is enhanced, and the photoelectric conversion efficiency WPE of the quantum well is improved.
Description
Technical Field
The present application relates to the field of semiconductor optoelectronic devices, and in particular, to a compound semiconductor light emitting element.
Background
The semiconductor element, especially the compound semiconductor light-emitting element, has a wide wavelength range with adjustable range, high light-emitting efficiency, energy saving, environmental protection, long service life exceeding 10 ten thousand hours, small size, multiple application scenes, strong designability and other factors, has gradually replaced incandescent lamps and fluorescent lamps, grows a light source for common household illumination, and is widely applied to new scenes, such as application fields of indoor high-resolution display screens, outdoor display screens, mini-LEDs, micro-LEDs, mobile phone television backlight, backlight illumination, street lamps, automobile headlamps, daytime running lights, in-car atmosphere lamps, flashlights and the like.
The conventional nitride semiconductor grows by using a sapphire substrate, has large lattice mismatch and thermal mismatch, causes higher defect density and polarization effect, generates a non-radiative recombination center, and reduces the luminous efficiency of the compound semiconductor luminous element; meanwhile, the hole ionization efficiency of the traditional nitride semiconductor is far lower than the electron ionization efficiency, so that the hole concentration is over 2 orders of magnitude lower than the electron concentration, excessive electrons can overflow from the multiple quantum wells to the second conductive semiconductor to generate non-radiative recombination, the hole ionization efficiency is low, holes of the second conductive semiconductor are difficult to effectively inject into the multiple quantum wells, the hole injection efficiency is low, and the luminous efficiency of the multiple quantum wells is low; the nitride semiconductor structure has non-central symmetry, can generate stronger spontaneous polarization along the direction of the c-axis, and superimposes piezoelectric polarization effects of lattice mismatch to form an intrinsic polarization field; the intrinsic polarization field makes the multi-quantum well layer generate stronger quantum confinement Stark effect along the (001) direction, so that the energy band inclination and the electron hole wave function spatial separation are caused, the radiation recombination efficiency of electron holes is reduced, and the luminous efficiency of the compound semiconductor luminous element is further influenced.
Disclosure of Invention
In order to solve one of the above technical problems, the present invention provides a compound semiconductor light-emitting element.
The embodiment of the invention provides a compound semiconductor light-emitting element, which comprises a substrate, an n-type semiconductor layer, a quantum well and a p-type semiconductor layer, wherein the substrate, the n-type semiconductor layer, the quantum well and the p-type semiconductor layer are sequentially arranged from bottom to top, the quantum well comprises a first sub-quantum well, a second sub-quantum well and a third sub-quantum well, the first sub-quantum well, the second sub-quantum well and the third sub-quantum well are sequentially arranged from bottom to top, and the first sub-quantum well, the second sub-quantum well and the third sub-quantum well have different lattice constant distributions.
Preferably, the lattice constant distribution of the first sub-quantum well has a profile of the function y=asin (bx+c) +d; the lattice constant distribution of the second sub-quantum well has a profile of a function y=esin (fx+g) +h; the lattice constant distribution of the third sub quantum well has a curve distribution of a function y=icos (jx+k) +l, wherein a.ltoreq.e.ltoreq.i, d.ltoreq.h.ltoreq.l.
Preferably, the first sub-quantum well, the second sub-quantum well and the third sub-quantum well further have different forbidden bandwidth distributions.
Preferably, the first sub-quantum well has a forbidden bandwidth distribution with a curve distribution of function y=mcos (nx+o) +p; the forbidden bandwidth distribution of the second sub quantum well has a curve distribution of a function y=qcos (rx+s) +t; the forbidden bandwidth distribution of the third sub quantum well has a curve distribution of a function y=usin (Vx+W) +Z, wherein M is less than or equal to Q is less than or equal to U, and P is less than or equal to T is less than or equal to Z.
Preferably, the quantum well is composed of any two or more than InGaN, gaN, alGaN, alInGaN, alInN, inN, alN, the quantum well is a periodic structure composed of a well layer and a barrier layer, the number of cycles of the first sub-quantum well is 1 to 10, the number of cycles of the second sub-quantum well is 3 to 20, and the number of cycles of the third sub-quantum well is 3 to 15.
Preferably, the well layer of the first sub quantum well is any one or any combination of InGaN, inN, alInN, alGaN, alInGaN, gaN, and the thickness of the well layer is 10-100 angstroms;
the barrier layer of the first sub-quantum well is any one or any combination of InGaN, gaN, alGaN, alInGaN, alInN, alN, and the thickness of the barrier layer is 10 to 500 angstroms.
Preferably, the well layer of the second sub quantum well is any one or any combination of InGaN, inN, alInN, alGaN, alInGaN, gaN, and the thickness of the well layer is 10-200 a/m;
the barrier layer of the second sub-quantum well is any one or any combination of InGaN, gaN, alGaN, alInGaN, alInN, alN, and the thickness of the barrier layer is 10 to 400 angstroms.
Preferably, the well layer of the third sub quantum well is any one or any combination of InGaN, inN, alInN, alGaN, alInGaN, gaN, and the thickness of the well layer is 10-100 angstroms;
the barrier layer of the third sub-quantum well is any one or any combination of InGaN, gaN, alGaN, alInGaN, alInN, alN, and the thickness of the barrier layer is 10 to 200 angstroms.
Preferably, the n-type semiconductor layer and the p-type semiconductor layer are any one or any combination of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, the thickness of the n-type semiconductor is 50nm to 50000nm, and the thickness of the p-type semiconductor is 5nm to 800nm.
Preferably, the substrate comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, ga 2 O 3 Graphene, BN, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiNx and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
The beneficial effects of the invention are as follows: according to the invention, through the multi-layer quantum well structure of the quantum well and setting different lattice constant distribution for the multi-layer quantum well, the lattice mismatch degree of the quantum well can be effectively reduced, the quantum confinement effect of the quantum well on carriers is improved, the overlapping probability of electron hole wave functions is enhanced, and the photoelectric conversion efficiency WPE of the quantum well is improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute an undue limitation to the application. In the drawings:
fig. 1 is a schematic structural view of a compound semiconductor light-emitting device according to an embodiment of the present invention;
FIG. 2 is a SIMS secondary ion mass spectrum of a compound semiconductor light emitting device according to an embodiment of the present invention;
FIG. 3 is a TEM image of a first sub-quantum well of a compound semiconductor light-emitting device according to an embodiment of the present invention;
fig. 4 is a TEM image of a second sub-quantum well of the compound semiconductor light emitting device according to the embodiment of the present invention.
Reference numerals:
100. a substrate, 101, an n-type semiconductor layer, 102, a quantum well, 103, a p-type semiconductor layer;
102a, first sub-quantum well, 102b, second sub-quantum well, 102c, third sub-quantum well.
Detailed Description
In order to make the technical solutions and advantages of the embodiments of the present application more apparent, the following detailed description of exemplary embodiments of the present application is given with reference to the accompanying drawings, and it is apparent that the described embodiments are only some of the embodiments of the present application and not exhaustive of all the embodiments. It should be noted that, in the case of no conflict, the embodiments and features in the embodiments may be combined with each other.
As shown in fig. 1 to 4, the present embodiment proposes a compound semiconductor light emitting element including a substrate 100, an n-type semiconductor layer 101, a quantum well 102, and a p-type semiconductor layer 103, which are disposed in this order from bottom to top. Wherein the quantum well 102 layer has a multilayer structure.
Specifically, in this embodiment, the compound semiconductor light-emitting element is provided with the substrate 100, the n-type semiconductor layer 101, the quantum well 102, and the p-type semiconductor layer 103 in this order from bottom to top. The quantum well 102 layer has a multilayer structure, specifically a three-layer structure, and is a first sub quantum well 102a, a second sub quantum well 102b, and a third sub quantum well 102c sequentially arranged from bottom to top. Among the first sub quantum well 102a, the second sub quantum well 102b, and the third sub quantum well 102c, the present embodiment sets different lattice constant distributions for them.
The lattice constant is the fundamental structural parameter of the crystalline material and refers to the side length of the unit cell, i.e. the side length of each parallelepiped element. The lattice constant has a direct relationship with the binding energy between atoms. The change in lattice constant reflects the change in the composition, stress state, and the like inside the crystal.
Based on the special effects of the lattice constants, the lattice constant distributions of the first sub-quantum well 102a, the second sub-quantum well 102b, and the third sub-quantum well 102c are designed according to the present embodiment, specifically as follows:
the lattice constant distribution of the first sub-quantum well 102a has a profile of the function y=asin (bx+c) +d;
the lattice constant distribution of the second sub-quantum well 102b has a profile of the function y=esin (fx+g) +h;
the lattice constant distribution of the third sub-quantum well 102c has a curve distribution of the function y=icos (jx+k) +l;
wherein, A is less than or equal to E is less than or equal to I, D is less than or equal to H is less than or equal to L.
In this embodiment, the multi-layer quantum well 102 structure of the quantum well 102 and the setting of different lattice constant distributions for the multi-layer quantum well 102 can effectively reduce the lattice mismatch degree of the quantum well 102, improve the quantum confinement effect of the quantum well 102 on carriers, and enhance the overlapping probability of electron hole wave functions, thereby improving the photoelectric conversion efficiency WPE of the quantum well 102.
Further, in this embodiment, in addition to setting the lattice constant distribution of the first sub-quantum well 102a, the second sub-quantum well 102b, and the third sub-quantum well 102c, the forbidden bandwidths of the first sub-quantum well 102a, the second sub-quantum well 102b, and the third sub-quantum well 102c are set as follows:
the forbidden bandwidth distribution of the first sub-quantum well 102a has a curve distribution of the function y=mcos (nx+o) +p;
the forbidden bandwidth distribution of the second sub-quantum well 102b has a curve distribution of the function y=qcos (rx+s) +t;
the forbidden bandwidth distribution of the third sub-quantum well 102c has a curve distribution of the function y=usin (vx+w) +z;
wherein M is less than or equal to Q is less than or equal to U, P is less than or equal to T is less than or equal to Z.
Forbidden band width
From this, the present embodiment can positively contribute to the improvement of the performance of the semiconductor light emitting element with respect to the setting of the forbidden bandwidth.
Further, in this embodiment, the quantum well 102 is composed of any two or more of InGaN, gaN, alGaN, alInGaN, alInN, inN, alN, the quantum well 102 is a periodic structure composed of a well layer and a barrier layer, the number of cycles of the first sub-quantum well 102a is 1 to 10, the number of cycles of the second sub-quantum well 102b is 3 to 20, and the number of cycles of the third sub-quantum well 102c is 3 to 15.
The well layer of the first sub-quantum well 102a is any one or any combination of InGaN, inN, alInN, alGaN, alInGaN, gaN, and the well layer has a thickness of 10 to 100 a.
The barrier layer of the first sub-quantum well 102a is any one or any combination of InGaN, gaN, alGaN, alInGaN, alInN, alN, and the barrier layer is 10 to 500 a.
The well layer of the second sub-quantum well 102b is any one or any combination of InGaN, inN, alInN, alGaN, alInGaN, gaN, and the well layer has a thickness of 10 to 200 a.
The barrier layer of the second sub-quantum well 102b is any one or any combination of InGaN, gaN, alGaN, alInGaN, alInN, alN, and the barrier layer is 10 to 400 a.
The well layer of the third sub-quantum well 102c is any one or any combination of InGaN, inN, alInN, alGaN, alInGaN, gaN, and the well layer has a thickness of 10 to 100 a.
The third sub-quantum well 102c has a barrier layer of 10 to 200 a m thick, which is any one or any combination of InGaN, gaN, alGaN, alInGaN, alInN, alN.
The n-type semiconductor layer 101 and the p-type semiconductor layer 103 are any one or any combination of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, the thickness of the n-type semiconductor is 50nm to 50000nm, and the thickness of the p-type semiconductor is 5nm to 800nm.
The substrate 100 includes sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, ga 2 O 3 Graphene, BN, sapphire/SiO 2 Composite substrate 100, sapphire/AlN composite substrate 100, sapphire/SiNx, magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any of the composite substrates 100.
It will be apparent to those skilled in the art that various modifications and variations can be made in the present application without departing from the spirit or scope of the application. Thus, if such modifications and variations of the present application fall within the scope of the claims and the equivalents thereof, the present application is intended to cover such modifications and variations.
Claims (10)
1. The compound semiconductor light-emitting element comprises a substrate, an n-type semiconductor layer, a quantum well and a p-type semiconductor layer which are sequentially arranged from bottom to top, and is characterized in that the quantum well comprises a first sub-quantum well, a second sub-quantum well and a third sub-quantum well which are sequentially arranged from bottom to top, and the first sub-quantum well, the second sub-quantum well and the third sub-quantum well have different lattice constant distributions.
2. The compound semiconductor light-emitting element according to claim 1, wherein the lattice constant distribution of the first sub-quantum well has a profile of a function y=asin (bx+c) +d; the lattice constant distribution of the second sub-quantum well has a profile of a function y=esin (fx+g) +h; the lattice constant distribution of the third sub quantum well has a curve distribution of a function y=icos (jx+k) +l, wherein a.ltoreq.e.ltoreq.i, d.ltoreq.h.ltoreq.l.
3. The compound semiconductor light-emitting element according to claim 1, wherein the first sub-quantum well, the second sub-quantum well, and the third sub-quantum well further have different forbidden bandwidth distributions.
4. A compound semiconductor light-emitting element according to claim 3, wherein the first sub-quantum well has a band gap profile having a profile of a function y=mcos (nx+o) +p; the forbidden bandwidth distribution of the second sub quantum well has a curve distribution of a function y=qcos (rx+s) +t; the forbidden bandwidth distribution of the third sub quantum well has a curve distribution of a function y=usin (Vx+W) +Z, wherein M is less than or equal to Q is less than or equal to U, and P is less than or equal to T is less than or equal to Z.
5. The compound semiconductor light-emitting element according to claim 1, wherein the quantum well is composed of any two or more of InGaN, gaN, alGaN, alInGaN, alInN, inN, alN, wherein the quantum well has a periodic structure composed of a well layer and a barrier layer, wherein the number of cycles of the first sub-quantum well is 1 to 10, wherein the number of cycles of the second sub-quantum well is 3 to 20, and wherein the number of cycles of the third sub-quantum well is 3 to 15.
6. The compound semiconductor light-emitting element according to claim 5, wherein the well layer of the first sub-quantum well is any one or any combination of InGaN, inN, alInN, alGaN, alInGaN, gaN, and wherein the well layer has a thickness of 10 to 100 a;
the barrier layer of the first sub-quantum well is any one or any combination of InGaN, gaN, alGaN, alInGaN, alInN, alN, and the thickness of the barrier layer is 10 to 500 angstroms.
7. The compound semiconductor light-emitting element according to claim 5, wherein the well layer of the second sub-quantum well is any one or any combination of InGaN, inN, alInN, alGaN, alInGaN, gaN, and wherein the well layer has a thickness of 10 to 200 a;
the barrier layer of the second sub-quantum well is any one or any combination of InGaN, gaN, alGaN, alInGaN, alInN, alN, and the thickness of the barrier layer is 10 to 400 angstroms.
8. The compound semiconductor light-emitting element according to claim 5, wherein the well layer of the third sub-quantum well is any one or any combination of InGaN, inN, alInN, alGaN, alInGaN, gaN, and wherein the well layer has a thickness of 10 to 100 a;
the barrier layer of the third sub-quantum well is any one or any combination of InGaN, gaN, alGaN, alInGaN, alInN, alN, and the thickness of the barrier layer is 10 to 200 angstroms.
9. The compound semiconductor light-emitting element according to claim 1, wherein the n-type semiconductor layer and the p-type semiconductor layer are any one or any combination of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, wherein the n-type semiconductor has a thickness of 50nm to 50000nm, and wherein the p-type semiconductor has a thickness of 5nm to 800nm.
10. The compound semiconductor light-emitting element according to claim 1, wherein the substrate comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, ga 2 O 3 Graphene, BN, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiNx and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311460951.2A CN117637940A (en) | 2023-11-06 | 2023-11-06 | Compound semiconductor light-emitting element |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311460951.2A CN117637940A (en) | 2023-11-06 | 2023-11-06 | Compound semiconductor light-emitting element |
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| CN117637940A true CN117637940A (en) | 2024-03-01 |
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| CN202311460951.2A Pending CN117637940A (en) | 2023-11-06 | 2023-11-06 | Compound semiconductor light-emitting element |
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