CN117558844A - Semiconductor ultraviolet light emitting chip - Google Patents
Semiconductor ultraviolet light emitting chip Download PDFInfo
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- CN117558844A CN117558844A CN202311528320.XA CN202311528320A CN117558844A CN 117558844 A CN117558844 A CN 117558844A CN 202311528320 A CN202311528320 A CN 202311528320A CN 117558844 A CN117558844 A CN 117558844A
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- quantum well
- ultraviolet light
- light emitting
- emitting chip
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 50
- 238000009826 distribution Methods 0.000 claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 229910052594 sapphire Inorganic materials 0.000 claims description 13
- 239000010980 sapphire Substances 0.000 claims description 13
- 239000002131 composite material Substances 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 11
- 230000000737 periodic effect Effects 0.000 claims description 6
- 229910002704 AlGaN Inorganic materials 0.000 claims description 3
- 229910010093 LiAlO Inorganic materials 0.000 claims description 3
- 229910020068 MgAl Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 238000012885 constant function Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052596 spinel Inorganic materials 0.000 claims description 3
- 239000011029 spinel Substances 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 9
- 238000005191 phase separation Methods 0.000 abstract description 4
- 230000006798 recombination Effects 0.000 abstract description 3
- 238000005215 recombination Methods 0.000 abstract description 3
- 230000010287 polarization Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000005699 Stark effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000001819 mass spectrum Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000001126 phototherapy Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a semiconductor ultraviolet light emitting chip, which sequentially comprises a substrate, an n-type semiconductor, a superlattice layer, a quantum well and a p-type semiconductor from bottom to top, wherein the In/H element proportion distribution of the quantum well has a curve distribution of sine function y=asin (Bx+C) +D, the Al/H element proportion distribution of the quantum well has a curve distribution of cosine function y=ecosn (fx+G) +H, and the C/H element proportion distribution and the O/H element proportion distribution of the quantum well have a curve distribution of sine function y=Isin (Jx+K) +L, wherein: i is less than or equal to E is less than or equal to A, L is less than or equal to D is less than or equal to H. The invention reduces the defect density and phase separation of the quantum well, reduces the V-shaped defect density of the quantum well, and reduces the recombination probability of the SRH and Auger of the quantum well.
Description
Technical Field
The invention relates to the technical field of semiconductor photoelectric devices, in particular to a semiconductor ultraviolet light emitting chip.
Background
The semiconductor element, especially the semiconductor light-emitting element, has a wide wavelength range with adjustable range, high luminous efficiency, energy saving, environmental protection, long service life over 10 ten thousand hours, small size, multiple application scenes, strong designability and other factors, blue light (with the luminous wavelength of 440-460 nm) and green light (with the luminous wavelength of 520-540 nm) are matched with fluorescent powder to gradually replace incandescent lamps and fluorescent lamps, a light source for common household illumination is grown, and new scenes such as an indoor high-resolution display screen, an outdoor display screen, mini-LED, micro-LED, a mobile phone television backlight, backlight illumination, a street lamp, an automobile headlight, a daytime running lamp, an in-car atmosphere lamp, a flashlight and other application fields are widely used.
The UVA band of the ultraviolet light-emitting diode (with the light-emitting wavelength of 350-420 nm) can be applied to the application fields of 3D curing, nail beautifying curing, phototherapy, skin treatment, plant illumination and the like. The semiconductor ultraviolet light-emitting diode grows by using a sapphire substrate, and has large lattice mismatch and thermal mismatch, so that higher defect density and polarization effect are caused, and the light-emitting efficiency of the semiconductor light-emitting element is reduced; meanwhile, the nitride semiconductor structure has non-central symmetry, stronger spontaneous polarization can be generated along the direction of the c axis, and piezoelectric polarization effects of lattice mismatch are overlapped to form an intrinsic polarization field; the intrinsic polarization field is along the (001) direction, so that the multiple quantum well layer generates stronger quantum confinement Stark effect, the energy band inclination and the electron hole wave function spatial separation are caused, and the radiation recombination efficiency of electron holes is reduced; the hole ionization efficiency of the semiconductor ultraviolet light emitting diode is far lower than the electron ionization efficiency, so that the hole concentration is more than 2 orders of magnitude lower than the electron concentration, excessive electrons can overflow from the multiple quantum wells to the second conductive type semiconductor to generate non-radiative recombination, the hole ionization efficiency is low, holes of the second conductive type semiconductor are difficult to effectively inject into the multiple quantum wells, the hole injection efficiency is low, and the light emitting efficiency of the multiple quantum wells is low.
Unlike traditional semiconductor blue light emitting diode, semiconductor ultraviolet light emitting diode has short wavelength and low In content of quantum well, and can not form quantum limiting effect of In component fluctuation In quantum well region, resulting In weak electron hole local effect of quantum well, further aggravating electron hole mismatch.
Disclosure of Invention
The invention provides a semiconductor ultraviolet light emitting chip, which reduces the defect density and phase separation of a quantum well, reduces the V-shaped defect density of the quantum well and reduces the composite probability of the SRH and Auger of the quantum well.
The invention provides a semiconductor ultraviolet light emitting chip, which sequentially comprises a substrate, an n-type semiconductor, a superlattice layer, a quantum well and a p-type semiconductor from bottom to top, wherein the In/H element proportion distribution of the quantum well has a curve distribution of sine function y=asin (Bx+C) +D, the Al/H element proportion distribution of the quantum well has a curve distribution of cosine function y=ecosn (fx+G) +H, and the C/H element proportion distribution and the O/H element proportion distribution of the quantum well have a curve distribution of sine function y=Isin (Jx+K) +L, wherein: i is less than or equal to E is less than or equal to A, L is less than or equal to D is less than or equal to H.
Preferably, the quantum well is a periodic structure consisting of a well layer and a barrier layer, and the quantum well period is q is more than or equal to 1 and less than or equal to 15; the well layer is any one or the combination of any two of InGaN, alInGaN, alInN, gaN, alGaN, and the thickness of the well layer is 10-100 angstroms; the barrier layer is any one or a combination of any two of GaN, alInGaN, alGaN, alN, alInN, and the thickness is 5-200 m.
Preferably, the quantum well emits ultraviolet light with a wavelength of 200-375 nm.
Preferably, the Mg/C element proportional distribution of the quantum well has a first, four-quadrant curve distribution of the function y=cosx/x; the H/Si element proportion distribution of the quantum well has a function of y=sinx/x 2 The first quadrant curve distribution.
Preferably, the Si/H element proportion distribution of the superlattice layer has an approximate y=e x +x curve distribution, al/H element ratio distribution has a function y=arcmotx curve distribution.
Preferably, the C/H element proportion distribution and the O/H element proportion distribution of the superlattice layer have constant function distributions.
Preferably, the superlattice layer is a periodic structure formed by a well layer and a barrier layer, and the period is p: p is more than or equal to 3 and less than or equal to 30.
Preferably, the superlattice layer well layer is any one or any combination of GaN, inGaN, alInGaN, alGaN, alInN, and the thickness of the superlattice well layer is 10-100 angstroms; the superlattice barrier layer is any one or a combination of any two of AlGaN, alN, alInGaN, gaN, alInN, and the thickness of the superlattice barrier layer is 5-800 angstroms.
Preferably, the n-type semiconductor and the p-type semiconductor comprise GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of a plurality of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP.
Preferably, the substrate comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
Compared with the prior art, the semiconductor ultraviolet light emitting chip provided by the embodiment of the invention has the beneficial effects that: the invention reduces the defect density and phase separation of the quantum well, reduces the V-shaped defect density of the quantum well, reduces the composite probability of the quantum well SRH and Auger, and improves the IQE of the ultraviolet light-emitting diode from below 30% to 40-70%.
Drawings
Fig. 1 is a schematic structural diagram of a semiconductor ultraviolet light emitting chip according to an embodiment of the present invention;
FIG. 2 is a SIMS secondary ion mass spectrum of a semiconductor ultraviolet light emitting chip according to an embodiment of the present invention;
fig. 3 is a transmission electron microscope image of a superlattice TEM in a semiconductor ultraviolet light emitting chip structure according to an embodiment of the present invention.
Fig. 4 is a quantum well TEM transmission electron microscope image of a semiconductor ultraviolet light emitting chip structure according to an embodiment of the present invention.
Reference numerals: 100: a substrate; 101: an n-type semiconductor; 102: a superlattice; 103: quantum well, 104: a p-type semiconductor.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In order to solve the above problems, a semiconductor ultraviolet light emitting chip provided in the embodiments of the present application will be described and illustrated in detail by the following specific examples.
Referring to fig. 1-4, the semiconductor ultraviolet light emitting chip provided by the invention sequentially comprises a substrate 100, an n-type semiconductor 101, a superlattice layer 102, a quantum well 103 and a p-type semiconductor 104 from bottom to top, wherein In/H element proportion distribution of the quantum well 103 has a curve distribution of sine function y=asin (bx+c) +d, al/H element proportion distribution of the quantum well 103 has a curve distribution of cosine function y=ecosn (fx+g) +h, and C/H element proportion distribution and O/H element proportion distribution of the quantum well 103 have a curve distribution of sine function y=isin (jx+k) +l, wherein: i is less than or equal to E is less than or equal to A, L is less than or equal to D is less than or equal to H. The quantum well 103 has a periodic structure formed by a well layer and a barrier layer, and the period of the quantum well 103 is q is more than or equal to 1 and less than or equal to 15; the well layer is any one or the combination of any two of InGaN, alInGaN, alInN, gaN, alGaN, and the thickness of the well layer is 10-100 angstroms; the barrier layer is any one or a combination of any two of GaN, alInGaN, alGaN, alN, alInN, and the thickness is 5-200 m. The quantum well 103 emits ultraviolet light having a wavelength of 200 to 375 nm. The invention reduces the defect density and phase separation of the quantum well, reduces the V-shaped defect density of the quantum well, reduces the composite probability of the quantum well SRH and Auger, and improves the IQE of the ultraviolet light-emitting diode from below 30% to 40-70%. The Mg/C element proportional distribution of the quantum well 103 has a first, four-quadrant curve distribution of the function y=cosx/x; H/Si element of the quantum well 103The proportional distribution has a function y=sinx/x 2 The first quadrant curve distribution.
In the present invention, the Si/H element ratio distribution of the superlattice layer 102 has approximately y=e x +x curve distribution, al/H element ratio distribution has a function y=arcmotx curve distribution. The C/H element proportion distribution and the O/H element proportion distribution of the superlattice layer 102 have constant function distributions. The superlattice layer 102 is a periodic structure formed by a well layer and a barrier layer, and the period is p: p is more than or equal to 3 and less than or equal to 30. The superlattice layer 102 well layer is any one or any combination of GaN, inGaN, alInGaN, alGaN, alInN, and the thickness of the superlattice layer well layer is 10-100 angstroms; the superlattice layer is any one or a combination of a plurality of AlGaN, alN, alInGaN, gaN, alInN, and the thickness of the superlattice layer 102 is 5-800A.
In the present invention, the n-type semiconductor 101 and the p-type semiconductor 104 include GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of a plurality of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP. The substrate 100 includes sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
The foregoing is merely a preferred embodiment of the present invention, and it should be noted that modifications and variations could be made by those skilled in the art without departing from the technical principles of the present invention, and such modifications and variations should also be regarded as being within the scope of the invention.
Claims (10)
1. The semiconductor ultraviolet light emitting chip sequentially comprises a substrate (100), an n-type semiconductor (101), a superlattice layer (102), a quantum well (103) and a p-type semiconductor (104) from bottom to top, and is characterized In that In/H element proportion distribution of the quantum well (103) has a curve distribution of sine function y=asin (bx+C) +D, al/H element proportion distribution of the quantum well (103) has a curve distribution of cosine function y=ecosn (fx+G) +H, and C/H element proportion distribution and O/H element proportion distribution of the quantum well (103) have a curve distribution of sine function y=isin (Jx+K) +L, wherein: i is less than or equal to E is less than or equal to A, L is less than or equal to D is less than or equal to H.
2. The semiconductor ultraviolet light emitting chip according to claim 1, wherein the quantum well (103) has a periodic structure composed of a well layer and a barrier layer, and the period of the quantum well (103) is q.1-15; the well layer is any one or the combination of any two of InGaN, alInGaN, alInN, gaN, alGaN, and the thickness of the well layer is 10-100 angstroms; the barrier layer is any one or a combination of any two of GaN, alInGaN, alGaN, alN, alInN, and the thickness is 5-200 m.
3. The semiconductor ultraviolet light emitting chip according to claim 2, wherein the quantum well (103) emits ultraviolet light having a wavelength of 200-375 nm.
4. A semiconductor violet ultraviolet light emitting chip according to claim 1, characterized in that the Mg/C element ratio distribution of the quantum well (103) has a first, four-quadrant curve distribution of the function y = cosx/x; the H/Si element proportion distribution of the quantum well (103) has a function y=sinx/x 2 The first quadrant curve distribution.
5. The semiconductor ultraviolet light emitting chip as set forth in claim 1, wherein the Si/H element ratio distribution of the superlattice layer (102) has a value of approximately y=e x +x curve distribution, al/H element ratio distribution has a function y=arcmotx curve distribution.
6. The semiconductor ultraviolet light emitting chip of claim 1, wherein the C/H element proportion distribution and the O/H element proportion distribution of the superlattice layer (102) have constant function distributions.
7. The semiconductor ultraviolet light emitting chip according to claim 1, wherein the superlattice layer (102) is a periodic structure formed by a well layer and a barrier layer, and the period is p: p is more than or equal to 3 and less than or equal to 30.
8. The semiconductor ultraviolet light emitting chip according to claim 1, wherein the superlattice layer (102) well layer is any one or any combination of GaN, inGaN, alInGaN, alGaN, alInN, and the thickness of the superlattice layer well layer is 10-100 a/m; the superlattice layer is any one or a combination of AlGaN, alN, alInGaN, gaN, alInN, and the thickness of the superlattice layer (102) is 5-800 m.
9. The semiconductor ultraviolet light emitting chip as set forth in claim 1, wherein the n-type semiconductor (101) and the p-type semiconductor (104) comprise GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of a plurality of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP.
10. A semiconductor violet ultraviolet light emitting chip according to claim 1, characterized in that said substrate (100) comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311528320.XA CN117558844A (en) | 2023-11-16 | 2023-11-16 | Semiconductor ultraviolet light emitting chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311528320.XA CN117558844A (en) | 2023-11-16 | 2023-11-16 | Semiconductor ultraviolet light emitting chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117558844A true CN117558844A (en) | 2024-02-13 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311528320.XA Pending CN117558844A (en) | 2023-11-16 | 2023-11-16 | Semiconductor ultraviolet light emitting chip |
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| Country | Link |
|---|---|
| CN (1) | CN117558844A (en) |
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- 2023-11-16 CN CN202311528320.XA patent/CN117558844A/en active Pending
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