CN117691013A - Semiconductor light-emitting element - Google Patents

Semiconductor light-emitting element Download PDF

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Publication number
CN117691013A
CN117691013A CN202311487592.XA CN202311487592A CN117691013A CN 117691013 A CN117691013 A CN 117691013A CN 202311487592 A CN202311487592 A CN 202311487592A CN 117691013 A CN117691013 A CN 117691013A
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Prior art keywords
layer
equal
electron
well
electron tunneling
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Inventor
郑锦坚
李水清
蓝家彬
张会康
黄军
胡志勇
王星河
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Anhui Geen Semiconductor Co ltd
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Anhui Geen Semiconductor Co ltd
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Priority to CN202311487592.XA priority Critical patent/CN117691013A/en
Publication of CN117691013A publication Critical patent/CN117691013A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The invention discloses a semiconductor light-emitting element, which sequentially comprises a substrate, an n-type semiconductor, a quantum well and a p-type semiconductor from bottom to top, wherein at least one electron tunneling layer is arranged between the quantum well and the n-type semiconductor; the electron tunneling layer is in a superlattice structure formed by a well layer and a barrier layer, and the Philips ionization degree a of the well layer of the electron tunneling layer is more than or equal to the Philips ionization degree b of the barrier layer; the breakdown field strength c of the well layer of the electron tunneling layer is larger than or equal to the breakdown field strength d of the barrier layer; the thermal conductivity e of the well layer of the electron tunneling layer is smaller than or equal to the thermal conductivity f of the barrier layer; and the electron affinity energy g of the well layer of the electron tunneling layer is more than or equal to the electron affinity energy h of the barrier layer. The invention improves the electron tunneling capability, enhances the two-dimensional and three-dimensional expansion migration capability of electrons, controls the concentration and the speed of electron injection into the quantum well, and inhibits the overflow of holes to the n-type semiconductor, thereby improving the ESD and thermal state efficiency of the semiconductor light-emitting element and reducing the voltage and the resistance.

Description

Semiconductor light-emitting element
Technical Field
The invention relates to the technical field of semiconductor photoelectric devices, in particular to a semiconductor light-emitting element.
Background
The semiconductor element, particularly the semiconductor light-emitting element, has a wide wavelength range with adjustable range, high light-emitting efficiency, energy conservation, environmental protection, long service life exceeding 10 ten thousand hours, small size, multiple application scenes, strong designability and other factors, has gradually replaced incandescent lamps and fluorescent lamps, grows a light source for common household illumination, and is widely applied to new scenes, such as application fields of indoor high-resolution display screens, outdoor display screens, mini-LEDs, micro-LEDs, mobile phone television backlights, backlight illumination, street lamps, automobile headlamps, daytime running lights, in-car atmosphere lamps, flashlights and the like.
The conventional nitride semiconductor grows by using a sapphire substrate, has large lattice mismatch and thermal mismatch, causes higher defect density and polarization effect, and reduces the luminous efficiency of the semiconductor luminous element; meanwhile, the hole ionization efficiency of the traditional nitride semiconductor is far lower than the electron ionization efficiency, so that the hole concentration is over 1 order of magnitude lower than the electron concentration, excessive electrons can overflow from the multiple quantum wells to the second conductive semiconductor to generate non-radiative recombination, the hole ionization efficiency is low, holes of the second conductive semiconductor are difficult to effectively inject into the multiple quantum wells, the hole injection efficiency is low, and the luminous efficiency of the multiple quantum wells is low; the nitride semiconductor structure has non-central symmetry, can generate stronger spontaneous polarization along the direction of the c-axis, and superimposes piezoelectric polarization effects of lattice mismatch to form an intrinsic polarization field; the intrinsic polarization field is along the (001) direction, so that the multiple quantum well layer generates stronger quantum confinement Stark effect, the energy band inclination and the electron hole wave function spatial separation are caused, and the radiation recombination efficiency of electron holes is reduced; the semiconductor light-emitting element has refractive index, dielectric constant and other parameters larger than those of air, so that the total reflection angle of the quantum well emitted light is smaller, and the light extraction efficiency is lower.
Disclosure of Invention
The invention provides a semiconductor light-emitting element, which improves the electron tunneling capability, enhances the two-dimensional and three-dimensional expansion migration capability of electrons, controls the concentration and the speed of electron injection into a quantum well, and inhibits the overflow of holes to an n-type semiconductor, thereby improving the ESD and thermal state efficiency of the semiconductor light-emitting element and reducing the voltage and the resistance.
The invention provides a semiconductor light-emitting element, which sequentially comprises a substrate, an n-type semiconductor, a quantum well and a p-type semiconductor from bottom to top, wherein at least one electron tunneling layer is arranged between the quantum well and the n-type semiconductor; the electron tunneling layer is in a superlattice structure formed by a well layer and a barrier layer, and the Philips ionization degree a of the well layer of the electron tunneling layer is more than or equal to the Philips ionization degree b of the barrier layer; the breakdown field strength c of the well layer of the electron tunneling layer is larger than or equal to the breakdown field strength d of the barrier layer; the thermal conductivity e of the well layer of the electron tunneling layer is smaller than or equal to the thermal conductivity f of the barrier layer; the electron affinity energy g of the trap layer of the electron tunneling layer is larger than or equal to the electron affinity energy h of the barrier layer; the electron effective mass i of the well layer of the electron tunneling layer is smaller than or equal to the electron effective mass j of the barrier layer.
Preferably, the philips ionization profile of the electron tunneling layer has a profile of a function y=asin (bx+c); the breakdown field intensity distribution of the electron tunneling layer has a curve distribution of a function y=dsin (ex+f); the thermal conductivity profile of the electron tunneling layer has a profile of function y=gcos (hx+i); the electron affinity energy distribution of the electron tunneling layer has a curve distribution of a function y=jsin (kx+l); the electron effective mass distribution of the electron tunneling layer has a profile of a function y=mcos (nx+p).
Preferably, the philips ionization degree distribution, the breakdown field strength distribution, the electron affinity energy distribution and the electron effective mass distribution of the electron tunneling layer have the following relationship: a is more than or equal to D is more than or equal to J is more than or equal to M is more than or equal to G.
Preferably, the electron tunneling layer is AlInGaN, alInN, alGaN, alN, inN, inGaN, gaN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 Any one or any combination of a plurality of BN.
Preferably, the well layer of the electron tunneling layer is GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of a plurality of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, and the thickness is 5 to 400 meter; the barrier layer of the electron tunneling layer is GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or a combination of any two or more of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, and the thickness is 10 to 800 meter.
Preferably, the quantum well is a periodic structure consisting of a well layer and a barrier layer, and the period number is 1-30; the well layer of the quantum well is GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of a plurality of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, and the thickness of the well layer is 5-100 angstroms; the barrier layer of the quantum well is GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of a plurality of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, and the thickness of the barrier layer is 10 to 600 Emi.
Preferably, the n-type semiconductor and the p-type semiconductor comprise GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of a plurality of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP; the thickness of the n-type semiconductor is 5-80000 a m; the thickness of the p-type semiconductor is 5-9000 angstroms.
Preferably, the substrate comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
Preferably, the Phillips ionization degree of the well layer of the quantum well is k, the Phillips ionization degree of the n-type semiconductor layer is l, and the Phillips ionization degree of the well layer of the quantum well, the electron tunneling layer and the n-type semiconductor layer have the following relationship that l is more than or equal to 0.4 and less than or equal to b is more than or equal to k and less than or equal to a and less than or equal to 0.6; the breakdown field intensity of the well layer of the quantum well is m, the breakdown field intensity of the n-type semiconductor layer is q, the breakdown field intensities of the well layer, the electron tunneling layer and the n-type semiconductor layer of the quantum well are in the following relation that 1E6 is more than or equal to q, d is more than or equal to m and less than or equal to c is more than or equal to 1E7 (V/cm), the electron affinity of the well layer of the quantum well is r, the electron affinity of the n-type semiconductor layer is s, and the electron affinity of the well layer, the electron tunneling layer and the n-type semiconductor layer of the quantum well are in the following relation that h is more than or equal to 0.1 and less than or equal to r is more than or equal to g and less than or equal to 6; the effective mass of electrons of the well layer of the quantum well is t, the electron affinity of the n-type semiconductor layer is u, and the effective mass of electrons of the well layer, the electron tunneling layer and the n-type semiconductor layer of the quantum well have the following relationship that i is more than or equal to 0.01 and less than or equal to t and less than or equal to j and less than or equal to u and less than or equal to 1.
Compared with the prior art, the semiconductor light-emitting element provided by the embodiment of the invention has the beneficial effects that: the invention improves the electron tunneling capability, enhances the two-dimensional and three-dimensional expansion migration capability of electrons, controls the concentration and the speed of electron injection into a quantum well, and inhibits the overflow of holes to an n-type semiconductor, thereby improving the ESD and thermal state efficiency of a semiconductor light-emitting element, reducing the voltage and the resistance, improving the ESD passing rate from more than 2KV90% to more than 8KV95%, improving the thermal state efficiency from 50-70% to 70-90%, and reducing the voltage from 3.0-3.1V to 2.8-2.95V.
Drawings
Fig. 1 is a schematic structural view of a semiconductor light emitting element according to an embodiment of the present invention;
fig. 2 is a structural SIMS secondary ion mass spectrum of a semiconductor light-emitting element according to an embodiment of the present invention;
FIG. 3 is a TEM image of an electron blocking layer and a p-type semiconductor of a semiconductor light emitting element according to an embodiment of the present invention;
reference numerals: 100: substrate, 101: n-type semiconductor, 102: quantum well, 103: p-type semiconductor, 104: an electron tunneling layer;
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In order to solve the above-described problems, a semiconductor light emitting element provided in the embodiments of the present application will be described and illustrated in detail by the following specific examples.
Referring to fig. 1-3, the semiconductor light emitting device provided by the present invention includes, in order from bottom to top, a substrate 100, an n-type semiconductor 101, a quantum well 102, and a p-type semiconductor 103, where at least one electron tunneling layer 104 is provided between the quantum well 102 and the n-type semiconductor 101; the electron tunneling layer 104 is AlInGaN, alInN, alGaN, alN, inN, inGaN, gaN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 Any one or any combination of a plurality of BN. The electron tunneling layer 104 is a superlattice structure formed by a well layer and a barrier layer, and the philips ionization degree a of the well layer of the electron tunneling layer 104 is greater than or equal to the philips ionization degree b of the barrier layer; the breakdown field strength c of the well layer of the electron tunneling layer 104 is greater than or equal to the breakdown field strength d of the barrier layer; the thermal conductivity e of the well layer of the electron tunneling layer 104 is less than or equal to the thermal conductivity f of the barrier layer; the electron affinity g of the well layer of the electron tunneling layer 104 is greater than or equal to the electron affinity h of the barrier layer; the electron effective mass i of the well layer of the electron tunneling layer 104 is less than or equal to the electron effective mass j of the barrier layer.
The philips ionization profile of the electron tunneling layer 104 has a profile of a function y=asin (bx+c); the breakdown field strength distribution of the electron tunneling layer 104 has a profile of a function y=dsin (ex+f); the thermal conductivity profile of the electron tunneling layer 104 has a profile of a function y=gcos (hx+i); the electron affinity profile of the electron tunneling layer 104 has a profile of a function y=jsin (kx+l); the electron effective mass distribution of the electron tunneling layer 104 has a profile of a function y=mcos (nx+p). The philips ionization degree distribution, breakdown field strength distribution, electron affinity distribution, and electron effective mass distribution of the electron tunneling layer 104 have the following relationship: a is more than or equal to D is more than or equal to J is more than or equal to M is more than or equal to G.
The well layer of the electron tunneling layer 104 is GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of a plurality of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, and the thickness is 5 to 400 meter; the barrier layer of the electron tunneling layer 104 is GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or a combination of any two or more of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, and the thickness is 10 to 800 meter.
The quantum well 102 is a periodic structure formed by a well layer and a barrier layer, and the period number is 1-30; the well layer of the quantum well 102 is GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of a plurality of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, and the thickness of the well layer is 5-100 angstroms; the barrier layer of the quantum well 102 is GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of a plurality of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, and the thickness of the barrier layer is 10 to 600 Emi.
The Phillips ionization degree of the well layer of the quantum well 102 is k, the Phillips ionization degree of the n-type semiconductor layer 101 is l, and the Phillips ionization degrees of the well layer of the quantum well 102, the electron tunneling layer 104 and the n-type semiconductor layer 101 have the following relationship that l is more than or equal to 0.4 and less than or equal to b is more than or equal to k and less than or equal to a and less than or equal to 0.6; the breakdown field strength of the well layer of the quantum well 102 is m, the breakdown field strength of the n-type semiconductor layer 101 is q, the well layer of the quantum well 102, the electron tunneling layer 104 and the breakdown field strength of the n-type semiconductor layer 101 have the following relationship that 1E6 is more than or equal to q is more than or equal to d is more than or equal to m is less than or equal to c is less than or equal to 1E7 (V/cm), the electron affinity of the well layer of the quantum well 102 is r, the electron affinity of the n-type semiconductor layer 101 is s, and the well layer of the quantum well 102, the electron tunneling layer 104 and the electron affinity of the n-type semiconductor layer 101 have the following relationship that h is more than or equal to 0.1 and less than or equal to r is less than or equal to g is less than or equal to 6; the effective mass of electrons in the well layer of the quantum well 102 is t, the affinity of electrons in the n-type semiconductor layer 101 is u, and the effective mass of electrons in the well layer of the quantum well 102, the electron tunneling layer 104 and the n-type semiconductor layer 101 have the following relationship that i is more than or equal to 0.01 and less than or equal to t and less than or equal to j and less than or equal to u and less than or equal to 1.
In the present invention, the n-type semiconductor 101 and the p-type semiconductor 103 include GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of a plurality of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP; the thickness of the n-type semiconductor 101 is 5 to 80000 a; the thickness of the p-type semiconductor 103 is 5 to 9000 angstroms. The substrate 100 includes sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
The invention improves the ESD and thermal state efficiency of the semiconductor light-emitting element, reduces the voltage and the resistance, improves the ESD passing rate from more than 2KV90% to more than 8KV95%, improves the thermal state efficiency from 50-70% to 70-90%, and reduces the voltage from 3.0-3.1V to 2.8-2.95V.
The foregoing is merely a preferred embodiment of the present invention, and it should be noted that modifications and variations could be made by those skilled in the art without departing from the technical principles of the present invention, and such modifications and variations should also be regarded as being within the scope of the invention.

Claims (10)

1. The semiconductor light-emitting element comprises a substrate (100), an n-type semiconductor (101), a quantum well (102) and a p-type semiconductor (103) from bottom to top, and is characterized in that at least one electron tunneling layer (104) is arranged between the quantum well (102) and the n-type semiconductor (101); the electron tunneling layer (104) is in a superlattice structure formed by a well layer and a barrier layer, and the electron affinity g of the well layer of the electron tunneling layer (104) is more than or equal to the electron affinity h of the barrier layer; the electron effective mass i of the well layer of the electron tunneling layer (104) is less than or equal to the electron effective mass j of the barrier layer.
2. The semiconductor light emitting element according to claim 1, wherein a philips ionization degree a of a well layer of the electron tunneling layer (104) is equal to or greater than a philips ionization degree b of a barrier layer; the breakdown field strength c of the well layer of the electron tunneling layer (104) is larger than or equal to the breakdown field strength d of the barrier layer; the thermal conductivity e of the well layer of the electron tunneling layer (104) is less than or equal to the thermal conductivity f of the barrier layer.
3. A semiconductor light emitting element according to claim 1, characterized in that the philips ionization degree distribution of the electron tunneling layer (104) has a profile of function y = Asin (bx+c); the breakdown field strength distribution of the electron tunneling layer (104) has a profile of a function y=dsin (ex+f); the thermal conductivity profile of the electron tunneling layer (104) has a functional y=gcos (hx+i) profile; the electron affinity profile of the electron tunneling layer (104) has a profile of a function y=jsin (kx+l); the electron effective mass distribution of the electron tunneling layer (104) has a profile of a function y=mcos (nx+p).
4. A semiconductor light emitting element according to claim 2, characterized in that the philips ionization degree distribution, breakdown field strength distribution, electron affinity energy distribution, electron effective mass distribution of the electron tunneling layer (104) have the following relation: a is more than or equal to D is more than or equal to J is more than or equal to M is more than or equal to G.
5. A semiconductor light emitting device according to claim 1, wherein the electron tunneling layer (104) is AlInGaN, alInN, alGaN, alN, inN, inGaN, gaN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, AlGaP、InGaP、SiC、Ga 2 O 3 Any one or any combination of a plurality of BN.
6. A semiconductor light emitting device according to claim 5, wherein the well layer of the electron tunneling layer (104) is GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of a plurality of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, and the thickness is 5 to 400 meter; the barrier layer of the electron tunneling layer (104) is GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or a combination of any two or more of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, and the thickness is 10 to 800 meter.
7. The semiconductor light emitting device according to claim 1, wherein the quantum well (102) has a periodic structure composed of a well layer and a barrier layer, and the number of periods is 1 to 30; the well layer of the quantum well (102) is GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of a plurality of materials selected from BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, al InP, alGaP and InGaP, and the thickness of the well layer is 5-100 a/m; the barrier layer of the quantum well (102) is GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of a plurality of the materials of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, al InAs and AlInP, alGaP, inGaP, and the thickness of the barrier layer is 10-600 Emi.
8. A semiconductor light emitting element according to claim 1, wherein the n-type semiconductor (101) and the p-type semiconductor (103) comprise GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 、BN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、Any one or any combination of a plurality of InGaP; the thickness of the n-type semiconductor (101) is 5-80000 a m; the thickness of the p-type semiconductor (103) is 5-9000 angstroms.
9. A semiconductor light emitting element according to claim 1, characterized in that the substrate (100) comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
10. The semiconductor light emitting device according to claim 1, wherein the philips ionization degree of the well layer of the quantum well (102) is k, the philips ionization degree of the n-type semiconductor layer (101) is l, and the philips ionization degrees of the well layer of the quantum well (102), the electron tunneling layer (104) and the n-type semiconductor layer (101) have the following relationship that 0.4.ltoreq.l.ltoreq.b.ltoreq.k.ltoreq.a.ltoreq.0.6; the breakdown field intensity of a well layer of the quantum well (102) is m, the breakdown field intensity of an n-type semiconductor layer (101) is q, the breakdown field intensities of the well layer of the quantum well (102), an electron tunneling layer (104) and the n-type semiconductor layer (101) have the following relation that 1E6 is more than or equal to q and less than or equal to m and less than or equal to c and less than or equal to 1E7 (V/cm), the electron affinity of the well layer of the quantum well (102) is r, the electron affinity of the n-type semiconductor layer (101) is s, and the electron affinity of the well layer of the quantum well (102), the electron tunneling layer (104) and the n-type semiconductor layer (101) have the following relation that h is more than or equal to 1 and less than or equal to m and less than or equal to c and less than or equal to 1E7 (V/cm); the effective mass of electrons of the well layer of the quantum well (102) is t, the electron affinity of the n-type semiconductor layer (101) is u, and the effective mass of electrons of the well layer of the quantum well (102), the electron tunneling layer (104) and the n-type semiconductor layer (101) has the following relationship that i is more than or equal to 0.01 and less than or equal to t is more than or equal to j is more than or equal to u is less than or equal to 1.
CN202311487592.XA 2023-11-09 2023-11-09 Semiconductor light-emitting element Pending CN117691013A (en)

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