CN118053951A - GaN-based semiconductor light-emitting chip - Google Patents

GaN-based semiconductor light-emitting chip Download PDF

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Publication number
CN118053951A
CN118053951A CN202410150557.7A CN202410150557A CN118053951A CN 118053951 A CN118053951 A CN 118053951A CN 202410150557 A CN202410150557 A CN 202410150557A CN 118053951 A CN118053951 A CN 118053951A
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type semiconductor
equal
quantum well
blocking layer
function
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Inventor
郑锦坚
李水清
张江勇
蔡鑫
蓝家彬
黄军
张会康
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Anhui Geen Semiconductor Co ltd
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Anhui Geen Semiconductor Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The invention discloses a GaN-based semiconductor light-emitting chip, which is sequentially provided with a substrate, an N-type semiconductor, a quantum well and a P-type semiconductor from bottom to top; an electron blocking layer is arranged between the quantum well and the P-type semiconductor; the quantum well is a periodic structure composed of a well layer and a barrier layer. The invention can prevent electrons from overflowing from the quantum well to the P-type semiconductor, and can not generate non-radiative recombination, thereby improving potential barrier of electrons overflowing to the P-type semiconductor in a high-temperature working state, reducing probability of electrons overflowing to the P-type semiconductor, reducing proportion of non-radiative recombination generated by electron overflow in a high-temperature condition, reducing probability of capturing high-temperature carriers by defects, and improving thermal efficiency attenuation problem and thermal shock and high-temperature and high-humidity stability in a high-temperature condition.

Description

GaN-based semiconductor light-emitting chip
Technical Field
The invention relates to the technical field of semiconductor photoelectric devices, in particular to a GaN-based semiconductor light-emitting chip.
Background
The semiconductor element, particularly the semiconductor light-emitting element, has a wide wavelength range with adjustable range, high light-emitting efficiency, energy conservation, environmental protection, long service life exceeding 10 ten thousand hours, small size, multiple application scenes, strong designability and other factors, has gradually replaced incandescent lamps and fluorescent lamps, grows a light source for common household illumination, and is widely applied to new scenes, such as application fields of indoor high-resolution display screens, outdoor display screens, mini-LEDs, micro-LEDs, mobile phone television backlights, backlight illumination, street lamps, automobile headlamps, daytime running lights, in-car atmosphere lamps, flashlights and the like.
The conventional nitride semiconductor is grown by using a sapphire substrate, and has large lattice mismatch and thermal mismatch, which results in higher defect density and polarization effect, and reduces the luminous efficiency of the semiconductor light emitting element. Meanwhile, under the high temperature condition, the hole ionization efficiency of the traditional nitride semiconductor is far lower than the electron ionization efficiency, so that the hole concentration is lower than the electron concentration by more than 1 order of magnitude, excessive electrons can overflow from the multiple quantum wells to the second conductive semiconductor to generate non-radiative recombination, the hole ionization efficiency is low, so that holes of the second conductive semiconductor are difficult to be effectively injected into the multiple quantum wells, the hole injection efficiency of the multiple quantum wells is low, and the luminous efficiency of the multiple quantum wells is low; the nitride semiconductor structure has non-central symmetry, can generate stronger spontaneous polarization along the direction of the c-axis, and superimposes piezoelectric polarization effects of lattice mismatch to form an intrinsic polarization field; the intrinsic polarization field is along the (001) direction, so that the multiple quantum well layer generates stronger quantum confinement Stark effect, the energy band inclination and the electron hole wave function spatial separation are caused, and the radiation recombination efficiency of electron holes is reduced; the semiconductor light-emitting element has refractive index, dielectric constant and other parameters larger than those of air, so that the total reflection angle of the quantum well emitted light is smaller, and the light extraction efficiency is lower.
Therefore, a semiconductor light emitting chip is needed to improve the problems of thermal efficiency attenuation, cold and hot impact and high temperature and high humidity stability under high temperature conditions.
Disclosure of Invention
In order to improve the problems of thermal efficiency decay, cold and hot impact and high-temperature and high-humidity stability of a semiconductor light emitting chip under a high-temperature condition, the invention provides a GaN-based semiconductor light emitting chip, comprising:
a substrate, an N-type semiconductor, a quantum well and a P-type semiconductor are sequentially arranged from bottom to top;
An electron blocking layer is arranged between the quantum well and the P-type semiconductor;
the quantum well is a periodic structure composed of a well layer and a barrier layer.
According to the GaN-based semiconductor light-emitting chip, the electron blocking layer is arranged between the quantum well and the P-type semiconductor, so that electrons cannot overflow from the quantum well to the P-type semiconductor and further cannot generate non-radiative recombination, potential barriers of electrons overflowing to the P-type semiconductor in a high-temperature working state are improved, the probability of overflowing to the P-type semiconductor is reduced, the proportion of non-radiative recombination generated due to overflowing of electrons in a high-temperature condition is reduced, the defect capturing probability of high-temperature carriers is reduced, and the thermal efficiency attenuation problem, cold-hot impact and high-temperature high-humidity stability under a high-temperature condition are improved.
In a possible implementation manner of the first aspect, the electron blocking layer is any one or any combination of GaN, inGaN, alN, inN, alInN, alInGaN, alGaN.
In a possible implementation manner of the first aspect, an electron blocking layer is provided between the quantum well and the P-type semiconductor, specifically:
the effective mass of heavy holes of the electron blocking layer is distributed in a first function; the first function is a first one-to-one quadratic function; wherein the quadratic coefficient of the first function is less than 0;
The valence band effective state density of the electron blocking layer is distributed in a second function; the second function is a second unitary quadratic function; wherein the quadratic coefficient of the second function is less than 0;
the peak electron drift rate of the electron blocking layer is distributed in a third function; the third function is a third unitary quadratic function; wherein the quadratic term coefficient of the third function is greater than 0;
And the quadratic term coefficient of the first function is larger than or equal to that of the second function.
In a possible implementation manner of the first aspect, an electron blocking layer is provided between the quantum well and the P-type semiconductor, and the method further includes:
The effective mass of the heavy holes of the quantum well layer is larger than or equal to a first preset value and smaller than or equal to the effective mass of the heavy holes of the P-type semiconductor, and the effective mass of the holes of the electron blocking layer is larger than or equal to the effective mass of the heavy holes of the P-type semiconductor and smaller than or equal to a second preset value.
In a possible implementation manner of the first aspect, an electron blocking layer is provided between the quantum well and the P-type semiconductor, and the method further includes:
The effective state density of the valence band of the P-type semiconductor is larger than or equal to a third preset value and smaller than or equal to the effective state density of the valence band of the electron blocking layer, and the effective state density of the valence band of the quantum well layer is larger than or equal to the effective state density of the valence band of the electron blocking layer and smaller than or equal to a fourth preset value.
In a possible implementation manner of the first aspect, an electron blocking layer is provided between the quantum well and the P-type semiconductor, and the method further includes:
The peak electron drift rate of the electron blocking layer is greater than or equal to a fifth preset value and less than or equal to the peak electron drift rate of the P-type semiconductor, and the peak electron drift rate of the quantum well layer is greater than or equal to the peak electron drift rate of the P-type semiconductor and less than or equal to a sixth preset value.
In a possible implementation manner of the first aspect, a photon energy absorption coefficient of the quantum well layer is greater than or equal to a seventh preset value and less than or equal to a photon energy absorption coefficient of the P-type semiconductor; the photon energy absorption coefficient of the electron blocking layer is larger than or equal to the photon energy absorption coefficient of the P-type semiconductor and smaller than or equal to an eighth preset value;
photon energy absorption coefficients of the electron blocking layer are distributed in a fourth function;
the fourth function is a third quadrant or fourth quadrant curve corresponding function of y= secx.
In a possible implementation manner of the first aspect, an electron blocking layer is provided between the quantum well and the P-type semiconductor, and the method further includes:
The separation energy of the quantum well layer is larger than or equal to a ninth preset value and smaller than or equal to the separation energy of the P-type semiconductor, and the separation energy of the electron blocking layer is larger than or equal to the separation energy of the P-type semiconductor and smaller than or equal to a tenth preset value;
the separation energy of the electron blocking layer is distributed in a fifth function;
the fifth function is y=ln (x+1) -e x.
In one possible implementation manner of the first aspect, the number of periodic structures of the quantum well, which is formed by the well layer and the barrier layer, is greater than or equal to 1 and less than or equal to 50;
The quantum well is any one or any combination of GaN、InGaN、InN、AlInN、AlN、AlInGaN、AlGaN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN、 diamond.
In a possible implementation manner of the first aspect, the N-type semiconductor is any one or any combination of GaN、AlGaN、InGaN、AlInGaN、AlN、InN、AlInN、SiC、Ga2O3、BN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP;
The P-type semiconductor is any one or any combination of GaN、AlGaN、InGaN、AlInGaN、AlN、InN、AlInN、SiC、Ga2O3、BN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP.
In a possible implementation manner of the first aspect, the substrate includes any one of sapphire, silicon, ge, siC, alN, gaN, gaAs, mo, diamond, cu, tiW, inP, a sapphire/SiO 2/SiNx composite substrate, a sapphire/SiN x/SiO2 composite substrate, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, a sapphire/SiN x, a magnesium aluminate spinel MgAl 2O4、MgO、ZnO、ZrB2、LiAlO2, and a LiGaO 2 composite substrate.
Compared with the prior art, the GaN-based semiconductor light-emitting chip is formed by sequentially arranging the substrate, the N-type semiconductor, the quantum well and the P-type semiconductor from bottom to top, and the electron blocking layer is arranged between the quantum well and the P-type semiconductor, so that electrons cannot overflow from the quantum well to the P-type semiconductor and further cannot generate non-radiative recombination, potential barriers for electrons overflowing to the P-type semiconductor in a high-temperature working state are improved, the probability of overflowing to the P-type semiconductor is reduced, the proportion of non-radiative recombination caused by overflowing of electrons in a high-temperature condition is reduced, the defect capturing probability of high-temperature carriers is reduced, and the thermal efficiency attenuation problem, the cold-hot impact and the high-temperature high-humidity stability under the high-temperature condition are improved.
Drawings
Fig. 1 is a schematic structural diagram of a GaN-based semiconductor light emitting chip according to an embodiment of the present invention;
Fig. 2 is a structural SIMS secondary ion mass spectrum diagram of a GaN-based semiconductor light-emitting chip according to an embodiment of the invention;
Fig. 3 is a structural SIMS secondary ion mass spectrum (partial enlarged view) of a GaN-based semiconductor light-emitting chip according to an embodiment of the invention;
FIG. 4 is a TEM transmission electron microscope image of a GaN-based semiconductor light emitting chip according to an embodiment of the present invention;
Fig. 5 is a structural TEM transmission electron microscope (partially enlarged view) of a GaN-based semiconductor light emitting chip according to an embodiment of the invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The GaN-based semiconductor light-emitting chip provided by the embodiment of the invention can improve the problems of thermal efficiency attenuation, cold and hot impact and high-temperature and high-humidity stability of the semiconductor light-emitting chip under the high-temperature condition.
Referring to fig. 1, in an embodiment of the present invention, a schematic structural diagram of a GaN-based semiconductor light emitting chip shown in fig. 1 is provided, where a substrate 100, an N-type semiconductor 101, a quantum well 102 and a P-type semiconductor 104 are sequentially disposed from bottom to top;
an electron blocking layer 103 is arranged between the quantum well 102 and the P-type semiconductor 104;
the quantum well 102 is a periodic structure composed of a well layer and a barrier layer.
In this embodiment, a GaN-based semiconductor light emitting chip is formed by the above composition method, and an electron blocking layer 103 is disposed between the quantum well 102 and the P-type semiconductor 104, so that electrons cannot overflow from the quantum well 102 to the P-type semiconductor 104, and further non-radiative recombination cannot be generated, thereby increasing potential barrier of electrons overflowing to the P-type semiconductor 104 in a high-temperature working state, reducing probability of electrons overflowing to the P-type semiconductor 104, reducing proportion of non-radiative recombination generated due to electron overflow in a high-temperature condition, reducing probability of capturing defects of high-temperature carriers, and improving thermal efficiency attenuation problem and thermal shock and stability of high temperature and high humidity in a high-temperature condition.
Illustratively, the electron blocking layer 103 is any one or any combination of GaN, inGaN, alN, inN, alInN, alInGaN, alGaN.
Illustratively, an electron blocking layer 103 is disposed between the quantum well 102 and the P-type semiconductor 104, specifically:
The effective mass of heavy holes of the electron blocking layer is distributed in a first function; the first function is a first one-to-one quadratic function; wherein the quadratic coefficient of the first function is less than 0; can be expressed as y=ax 2 +bx+c (a < 0);
the valence band effective state density of the electron blocking layer is distributed in a second function; the second function is a second unitary quadratic function; wherein the quadratic coefficient of the second function is less than 0; can be expressed as y=dx 2 +ex+f (D < 0);
The peak electron drift rate of the electron blocking layer is distributed in a third function; the third function is a third unitary quadratic function; wherein the quadratic term coefficient of the third function is greater than 0; can be expressed as y=gx 2 +hx+i (G > 0);
The quadratic term coefficient of the first function is larger than or equal to the quadratic term coefficient of the second function; it can be expressed as D.ltoreq.A < 0 < G.
Illustratively, the quantum well 102 and the P-type semiconductor 104 have an electron blocking layer 103 therebetween, and further include:
The effective mass of the heavy holes of the well layer of the quantum well 102 is larger than or equal to a first preset value and smaller than or equal to the effective mass of the heavy holes of the P-type semiconductor 104, and the effective mass of the holes of the electron blocking layer 103 is larger than or equal to the effective mass of the heavy holes of the P-type semiconductor 104 and smaller than or equal to a second preset value; in practical application, the first preset value is 0.5m 0, and the second preset value is 15m 0.
Illustratively, the quantum well 102 and the P-type semiconductor 104 have an electron blocking layer 103 therebetween, and further include:
The effective state density of the valence band of the P-type semiconductor 104 is greater than or equal to a third preset value and less than or equal to the effective state density of the valence band of the electron blocking layer 103, and the effective state density of the valence band of the well layer of the quantum well 102 is greater than or equal to the effective state density of the valence band of the electron blocking layer 103 and less than or equal to a fourth preset value; in practical application, the third preset value is 1E17, and the fourth preset value is 1E22.
Illustratively, the quantum well 102 and the P-type semiconductor 104 have an electron blocking layer 103 therebetween, and further include:
The peak electron drift rate of the electron blocking layer 103 is greater than or equal to a fifth preset value and less than or equal to the peak electron drift rate of the P-type semiconductor 104, and the peak electron drift rate of the well layer of the quantum well 102 is greater than or equal to the peak electron drift rate of the P-type semiconductor 104 and less than or equal to a sixth preset value; in practical application, the value of the ground five preset values is 1E5 cm/s, and the value of the sixth preset value is 1E9 cm/s.
Illustratively, the photon energy absorption coefficient of the quantum well 102 well layer is greater than or equal to a seventh preset value and less than or equal to the photon energy absorption coefficient of the P-type semiconductor 104; the photon energy absorption coefficient of the electron blocking layer 103 is greater than or equal to the photon energy absorption coefficient of the P-type semiconductor 104 and less than or equal to an eighth preset value;
the photon energy absorption coefficient of the electron blocking layer 103 is distributed as a function;
Wherein the fourth function is a third quadrant or fourth quadrant curve corresponding function of y= secx;
In practical application, the seventh preset value is 1E4 cm -1, and the eighth preset value is 1E8cm -1.
Illustratively, the quantum well 102 and the P-type semiconductor 104 have an electron blocking layer 103 therebetween, and further include:
the separation energy of the well layer of the quantum well 102 is greater than or equal to a ninth preset value and less than or equal to the separation energy of the P-type semiconductor 104, and the separation energy of the electron blocking layer 103 is greater than or equal to the separation energy of the P-type semiconductor 104 and less than or equal to a tenth preset value;
the separation energy of the electron blocking layer 103 is distributed as a fifth function;
the fifth function is y=ln (x+1) -e x;
in practical application, the ninth preset value is 2eV, and the tenth preset value is 20eV.
Illustratively, the number of periodic structures of the quantum well 102, which is a combination of a well layer and a barrier layer, is 1 or more and 50 or less;
The quantum well 102 is any one or any combination of GaN、InGaN、InN、AlInN、AlN、AlInGaN、AlGaN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN、 diamond; in practical applications, the quantum well has a well layer thickness of 5 to 200 a, 10 to 500 a.
Illustratively, the N-type semiconductor 101 is any one or any combination of GaN、AlGaN、InGaN、AlInGaN、AlN、InN、AlInN、SiC、Ga2O3、BN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP; in practical application, the thickness of the N-type semiconductor is 50 a/m or more and 90000 a/m or less.
The P-type semiconductor 104 is any one or any combination of GaN、AlGaN、InGaN、AlInGaN、AlN、InN、AlInN、SiC、Ga2O3、BN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP; in practical applications, the thickness of the P-type semiconductor is 10 a/m or more and 80000 a/m or less.
Illustratively, the substrate 100 includes any one of sapphire, silicon, ge, siC, alN, gaN, gaAs, mo, diamond, cu, tiW, inP, a sapphire/SiO 2/SiNx composite substrate, a sapphire/SiN x/SiO2 composite substrate, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, a sapphire/SiN x, a magnesium aluminate spinel MgAl 2O4、MgO、ZnO、ZrB2、LiAlO2, and a LiGaO 2 composite substrate.
Referring to fig. 2, in the embodiment of the present invention, a structural SIMS secondary ion mass spectrum of a GaN-based semiconductor light emitting chip according to the embodiment shown in fig. 2 is provided, so that actual ion mass spectrum data of a semiconductor laser according to the embodiment of the present invention can be obtained, and if specific embodiment data is required, reference is also made to a structural SIMS secondary ion mass spectrum (partial enlarged view) of a GaN-based semiconductor light emitting chip according to the embodiment shown in fig. 3.
Referring to fig. 4, in an embodiment of the present invention, a TEM transmission electron microscope of a GaN-based semiconductor light emitting chip according to another embodiment shown in fig. 3 is provided, so that actual structural projection data of a semiconductor laser according to an embodiment of the present invention can be obtained, and if necessary, specific embodiment data can be obtained, further referring to fig. 4, which is a TEM transmission electron microscope of a GaN-based semiconductor light emitting chip according to another embodiment of the present invention.
In the embodiment of the invention, the GaN-based semiconductor light-emitting chip is formed by sequentially arranging the substrate, the N-type semiconductor, the quantum well and the P-type semiconductor from bottom to top, and the electron blocking layer is introduced between the quantum well and the P-type semiconductor, so that electrons cannot overflow from the quantum well to the P-type semiconductor and further cannot generate non-radiative recombination, potential barriers for electrons overflowing to the P-type semiconductor in a high-temperature working state are improved, the probability of overflowing to the P-type semiconductor is reduced, the proportion of non-radiative recombination caused by overflowing of electrons in a high-temperature condition is reduced, the defect capturing probability of high-temperature carriers is reduced, and the thermal efficiency attenuation problem and the stability of cold-hot impact and high-temperature high-humidity under the high-temperature condition are improved.
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that changes and modifications may be made without departing from the principles of the invention, such changes and modifications are also intended to be within the scope of the invention.

Claims (10)

1. A GaN-based semiconductor light emitting chip, comprising:
a substrate, an N-type semiconductor, a quantum well and a P-type semiconductor are sequentially arranged from bottom to top;
An electron blocking layer is arranged between the quantum well and the P-type semiconductor;
the quantum well is a periodic structure composed of a well layer and a barrier layer.
2. The GaN-based semiconductor light emitting chip of claim 1 wherein the electron blocking layer is any one or any combination of GaN, inGaN, alN, inN, alInN, alInGaN, alGaN.
3. The GaN-based semiconductor light emitting chip of claim 1, wherein an electron blocking layer is provided between the quantum well and the P-type semiconductor, specifically:
the effective mass of heavy holes of the electron blocking layer is distributed in a first function; the first function is a first one-to-one quadratic function; wherein the quadratic coefficient of the first function is less than 0;
The valence band effective state density of the electron blocking layer is distributed in a second function; the second function is a second unitary quadratic function; wherein the quadratic coefficient of the second function is less than 0;
the peak electron drift rate of the electron blocking layer is distributed in a third function; the third function is a third unitary quadratic function; wherein the quadratic term coefficient of the third function is greater than 0;
And the quadratic term coefficient of the first function is larger than or equal to that of the second function.
4. The GaN-based semiconductor light emitting chip of claim 3 wherein said quantum well and said P-type semiconductor have an electron blocking layer therebetween, further comprising:
The effective mass of the heavy holes of the quantum well layer is larger than or equal to a first preset value and smaller than or equal to the effective mass of the heavy holes of the P-type semiconductor, and the effective mass of the holes of the electron blocking layer is larger than or equal to the effective mass of the heavy holes of the P-type semiconductor and smaller than or equal to a second preset value.
5. The GaN-based semiconductor light emitting chip of claim 3 wherein said quantum well and said P-type semiconductor have an electron blocking layer therebetween, further comprising:
The effective state density of the valence band of the P-type semiconductor is larger than or equal to a third preset value and smaller than or equal to the effective state density of the valence band of the electron blocking layer, and the effective state density of the valence band of the quantum well layer is larger than or equal to the effective state density of the valence band of the electron blocking layer and smaller than or equal to a fourth preset value.
6. The GaN-based semiconductor light emitting chip of claim 3 wherein said quantum well and said P-type semiconductor have an electron blocking layer therebetween, further comprising:
The peak electron drift rate of the electron blocking layer is greater than or equal to a fifth preset value and less than or equal to the peak electron drift rate of the P-type semiconductor, and the peak electron drift rate of the quantum well layer is greater than or equal to the peak electron drift rate of the P-type semiconductor and less than or equal to a sixth preset value.
7. The GaN-based semiconductor light emitting chip of claim 1 wherein the quantum well and the P-type semiconductor have an electron blocking layer therebetween, further comprising:
The photon energy absorption coefficient of the quantum well layer is larger than or equal to a seventh preset value and smaller than or equal to the photon energy absorption coefficient of the P-type semiconductor; the photon energy absorption coefficient of the electron blocking layer is larger than or equal to the photon energy absorption coefficient of the P-type semiconductor and smaller than or equal to an eighth preset value;
photon energy absorption coefficients of the electron blocking layer are distributed in a fourth function;
the fourth function is a third quadrant or fourth quadrant curve corresponding function of y= secx.
8. The GaN-based semiconductor light emitting chip of claim 1 wherein the quantum well and the P-type semiconductor have an electron blocking layer therebetween, further comprising:
The separation energy of the quantum well layer is larger than or equal to a ninth preset value and smaller than or equal to the separation energy of the P-type semiconductor, and the separation energy of the electron blocking layer is larger than or equal to the separation energy of the P-type semiconductor and smaller than or equal to a tenth preset value;
the separation energy of the electron blocking layer is distributed in a fifth function;
the fifth function is y=ln (x+1) -e x.
9. The GaN-based semiconductor light emitting chip of claim 1, wherein the number of periodic structures of the quantum well, which is a combination of a well layer and a barrier layer, is 1 or more and 50 or less;
The quantum well is any one or any combination of GaN、InGaN、InN、AlInN、AlN、AlInGaN、AlGaN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN、 diamond;
The N-type semiconductor is any one or any combination of GaN、AlGaN、InGaN、AlInGaN、AlN、InN、AlInN、SiC、Ga2O3、BN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP;
The P-type semiconductor is any one or any combination of GaN、AlGaN、InGaN、AlInGaN、AlN、InN、AlInN、SiC、Ga2O3、BN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP.
10. The GaN-based semiconductor light emitting chip of claim 1, wherein the substrate comprises any one of sapphire, silicon, ge, siC, alN, gaN, gaAs, mo, diamond, cu, tiW, inP, a sapphire/SiO 2/SiNx composite substrate, a sapphire/SiN x/SiO2 composite substrate, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, a sapphire/SiN x, a magnesium aluminate spinel MgAl 2O4、MgO、ZnO、ZrB2、LiAlO2, and a LiGaO 2 composite substrate.
CN202410150557.7A 2024-02-02 2024-02-02 GaN-based semiconductor light-emitting chip Pending CN118053951A (en)

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