CN117727847A - Semiconductor ultraviolet light-emitting diode - Google Patents
Semiconductor ultraviolet light-emitting diode Download PDFInfo
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- CN117727847A CN117727847A CN202311528324.8A CN202311528324A CN117727847A CN 117727847 A CN117727847 A CN 117727847A CN 202311528324 A CN202311528324 A CN 202311528324A CN 117727847 A CN117727847 A CN 117727847A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 51
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- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052596 spinel Inorganic materials 0.000 claims description 3
- 239000011029 spinel Substances 0.000 claims description 3
- 229910002704 AlGaN Inorganic materials 0.000 claims 2
- 229910010093 LiAlO Inorganic materials 0.000 claims 1
- 229910020068 MgAl Inorganic materials 0.000 claims 1
- 238000002347 injection Methods 0.000 abstract description 5
- 239000007924 injection Substances 0.000 abstract description 5
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Abstract
The invention discloses a semiconductor ultraviolet light-emitting diode, which sequentially comprises a substrate, an n-type semiconductor, a superlattice layer, a quantum well and a p-type hole expansion layer from bottom to top, wherein In element distribution of the p-type hole expansion layer has a function of y=a x ‑a ‑x Curve distribution; the p-type hole expansion layer Al element distribution has a function y= (a) x ‑1)/(a x +1) profile; the Mg doping concentration profile of the p-type hole expansion layer has a function y=log b (m-x)/(m+x) curve distribution. The invention improves the transverse and longitudinal expansion capability of ionized holes, increases the transportation and injection efficiency of holes, and improves the ESD passing rate of the semiconductor ultraviolet light-emitting diode from below 60% to above 90% of the 8KV ESD passing rate.
Description
Technical Field
The invention relates to the technical field of semiconductor photoelectric devices, in particular to a semiconductor ultraviolet light emitting diode.
Background
The semiconductor element, especially the semiconductor light-emitting element, has a wide wavelength range with adjustable range, high luminous efficiency, energy saving, environmental protection, long service life over 10 ten thousand hours, small size, multiple application scenes, strong designability and other factors, blue light (with the luminous wavelength of 440-460 nm) and green light (with the luminous wavelength of 520-540 nm) are matched with fluorescent powder to gradually replace incandescent lamps and fluorescent lamps, a light source for common household illumination is grown, and new scenes such as an indoor high-resolution display screen, an outdoor display screen, mini-LED, micro-LED, a mobile phone television backlight, backlight illumination, a street lamp, an automobile headlight, a daytime running lamp, an in-car atmosphere lamp, a flashlight and other application fields are widely used.
The UVA band of the ultraviolet light-emitting diode (with the light-emitting wavelength of 350-420 nm) can be applied to the application fields of 3D curing, nail beautifying curing, phototherapy, skin treatment, plant illumination and the like. The semiconductor ultraviolet light-emitting diode grows by using a sapphire substrate, and has large lattice mismatch and thermal mismatch, so that higher defect density and polarization effect are caused, and the light-emitting efficiency of the semiconductor light-emitting element is reduced; meanwhile, the nitride semiconductor structure has non-central symmetry, stronger spontaneous polarization can be generated along the direction of the c axis, and piezoelectric polarization effects of lattice mismatch are overlapped to form an intrinsic polarization field; the intrinsic polarization field is along the (001) direction, so that the multiple quantum well layer generates stronger quantum confinement Stark effect, the energy band inclination and the electron hole wave function spatial separation are caused, and the radiation recombination efficiency of electron holes is reduced; the hole ionization efficiency of the semiconductor ultraviolet light emitting diode is far lower than the electron ionization efficiency, so that the hole concentration is more than 2 orders of magnitude lower than the electron concentration, excessive electrons can overflow from the multiple quantum wells to the second conductive type semiconductor to generate non-radiative recombination, the hole ionization efficiency is low, holes of the second conductive type semiconductor are difficult to effectively inject into the multiple quantum wells, the hole injection efficiency is low, and the light emitting efficiency of the multiple quantum wells is low.
Unlike traditional semiconductor blue light emitting diode, semiconductor ultraviolet light emitting diode has short wavelength and low I n content of quantum well, and can not form quantum limiting effect of I n component fluctuation in quantum well region, resulting in weak electron hole local effect of quantum well, further aggravating electron hole mismatch.
Disclosure of Invention
The invention provides a semiconductor ultraviolet light-emitting diode, which improves the transverse and longitudinal expansion capacity of ionized holes, increases the transportation and injection efficiency of the holes, and improves the ESD passing rate of the semiconductor ultraviolet light-emitting diode from below 60% to above 90% of the 8KV ESD passing rate.
The invention provides a semiconductor ultraviolet light-emitting diode, which sequentially comprises a substrate, an n-type semiconductor, a superlattice layer, a quantum well and a p-type hole expansion layer from bottom to top,
the p-type hole expansion layer I n element distribution has a function y=a x -a -x Curve distribution;
the p-type hole expansion layer Al element distribution has a function y= (a) x -1)/(a x +1)(a>1) Curve distribution;
the Mg doping concentration profile of the p-type hole expansion layer has a function
y＝l og b (m-x)/(m+x)(b>1,m>0) The distribution of the curve is such that,
the p-type hole expansion layer H element distribution has a cubic function y=e×x 3 +f*x 2 +gx+h distribution, discriminant of cubic function Δ= 4 (f 2 -3e x g) is greater than 0 and e<0 distribution;
the p-type hole expansion layer O element distribution has a cubic function y=e×x 3 +f*x 2 +gx+h distribution, discriminant of cubic function Δ= 4 (f 2 -3e g) is equal to or less than 0 and e<0 distribution;
the distribution of the C element of the p-type hole expansion layer is provided with a nonlinear broken line function curve distribution with four broken points.
Preferably, the p-type hole expansion layer is any one or a combination of any several of Al GaN, al N, inGaN, alInGaN, gaN and AlInN, and the thickness is 10-1000 m.
Preferably, the p-type hole extension layer and quantum well Mg doping concentration profile in combination has a function y=x 2 -e x A curve distribution.
Preferably, the Mg doping concentration of the p-type hole expansion layer decreases toward the quantum well, and the decreasing angle is ρ: 45-90 DEG rho; the H element of the p-type hole expansion layer is distributed in a descending trend towards the quantum well direction, and the descending angle is psi: the psi is more than or equal to 40 and less than or equal to 85 degrees; the O element distribution of the p-type hole expansion layer is in a descending trend towards the quantum well direction, and the descending angle is theta: θ is more than or equal to 40 and less than or equal to 85 degrees; the Si doping concentration distribution of the p-type hole expansion layer is in a descending trend towards the quantum well direction, and the descending angle is delta: delta is more than or equal to 40 and less than or equal to 85 degrees; the I n element of the p-type hole expansion layer is distributed towards the quantum well direction in a descending trend, and the descending angle is upsilon: v is more than or equal to 50 and less than or equal to 90 degrees; the C element distribution peak position of the p-type hole expansion layer is in a descending trend towards the quantum well direction, and the descending angle is phi: phi is more than or equal to 40 and less than or equal to 80 degrees; the Al element distribution of the p-type hole expansion layer is in a descending trend towards the surface direction, and the descending angle is kappa: and the variation angles of Mg doping concentration distribution, si doping concentration distribution, I n element distribution, al element distribution, C element distribution, O element distribution and H element distribution of the p-type hole expansion layer are equal to or more than 15 degrees and equal to or less than 70 degrees, and have the following relation: and kappa phi is less than or equal to theta is less than or equal to delta is less than or equal to rho is less than or equal to v.
Preferably, the distribution of the H element of the quantum well is in a decreasing trend towards the superlattice layer, and the decreasing angle is α: alpha is more than or equal to 45 and less than or equal to 90 degrees; the Mg doping concentration distribution of the quantum well is in a descending trend towards the superlattice layer direction, and the descending angle is beta: beta is more than or equal to 40 and less than or equal to 85 degrees; al element distribution of the superlattice layer is in a descending trend towards the n-type semiconductor direction, and the descending angle is gamma: gamma is more than or equal to 35 and less than or equal to 80 degrees; the Si doping concentration distribution of the superlattice layer is in a descending trend towards the quantum well direction, and the descending angle is 30-sigma-75 degrees; the change angles of the H element distribution, the Mg doping concentration distribution, the Si doping concentration distribution and the Al element distribution of the quantum well and the superlattice layer have the following relations: sigma is less than or equal to gamma is less than or equal to beta is less than or equal to alpha.
Preferably, the p-type hole extension layer has the following relationship with the angles of variation of the Al element distribution, I n element distribution, H element distribution, C element distribution, O element distribution, si doping concentration distribution and Mg doping concentration distribution of the quantum well and the superlattice layer: sigma gamma is less than or equal to kappa is less than or equal to phi is less than or equal to beta is less than or equal to alpha is less than or equal to theta is less than or equal to delta is less than or equal to rho.
Preferably, the superlattice layer is a periodic structure formed by a well layer and a barrier layer, and the period is p: p is more than or equal to 5 and less than or equal to 30; the superlattice layer well layer is any one or a combination of any two of GaN, inGaN and AlInGaN, and the thickness of the superlattice layer well layer is 20-100 angstroms; the superlattice layer is any one or the combination of any two of Al GaN, al N, al I nGaN and GaN, and the thickness of the superlattice layer is 5-60 Emeter; the thickness of the well layer of the superlattice layer is larger than or equal to the thickness of the barrier layer of the superlattice layer.
Preferably, the quantum well is a periodic structure consisting of a well layer and a barrier layer, and the quantum well period is q is more than or equal to 3 and less than or equal to 15; the well layer is any one or the combination of any several of InGaN, alInGaN, alInN and GaN, and the thickness of the well layer is 50-150 meter; the barrier layer is any one or a combination of more than one of GaN, al I N GaN, al GaN and Al N, and the thickness is 5-200 m; the thickness of the barrier layer of the quantum well is larger than or equal to that of the well layer of the quantum well; the quantum well emits ultraviolet light with the wavelength of 360-375 nm.
Preferably, the N-type semiconductor and the p-type hole expansion layer comprise GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or a combination of any several of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP and AlGaP.
Preferably, the substrate comprises sapphire, silicon, ge, si C, A/N, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/A/L N composite substrate, sapphire/Si N x MgA l of magnesia-alumina spinel 2 O 4 、MgO、ZnO、ZrB 2 、LiA l O 2 And Li GaO 2 Any one of the composite substrates.
Compared with the prior art, the semiconductor ultraviolet light emitting diode provided by the embodiment of the invention has the beneficial effects that: the invention improves the transverse and longitudinal expansion capability of ionized holes, increases the transportation and injection efficiency of holes, and improves the ESD passing rate of the semiconductor ultraviolet light-emitting diode from below 60% to above 90% of the 8KV ESD passing rate.
Drawings
FIG. 1 is a schematic diagram of a semiconductor ultraviolet LED according to an embodiment of the present invention;
FIG. 2 is a SIMS secondary ion mass spectrum of a semiconductor ultraviolet light emitting diode according to an embodiment of the present invention;
fig. 3 is a SIMS secondary ion mass spectrum (Si doping concentration variation angle and Mg doping concentration variation angle) of a semiconductor violet-ultraviolet light emitting diode according to an embodiment of the present invention.
Fig. 4 is a TEM transmission electron microscope image of a p-type hole expansion layer in a semiconductor ultraviolet light emitting diode structure according to an embodiment of the present invention.
Fig. 5 is a transmission electron microscope image of a superlattice TEM in a semiconductor ultraviolet light emitting diode structure according to an embodiment of the invention.
Fig. 6 is a quantum well TEM transmission electron microscope image of a semiconductor ultraviolet light emitting diode structure according to an embodiment of the present invention.
Reference numerals: 100: a substrate; 101: an n-type semiconductor; 102: a superlattice; 103: quantum well, 104: a p-type hole expansion layer.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In order to solve the above problems, a semiconductor ultraviolet light emitting diode provided in the embodiments of the present application will be described and illustrated in detail by the following specific examples.
Referring to FIGS. 1-6, the present invention providesThe semiconductor ultraviolet light emitting diode comprises a substrate 100, an n-type semiconductor 101, a superlattice layer 102, a quantum well 103 and a p-type hole expansion layer 104 from bottom to top, wherein the element distribution of the p-type hole expansion layer 104I n has a function y=a x -a -x Curve distribution; the p-type hole expansion layer 104A l element distribution has a function y= (a) x -1)/(a x +1)(a>1) Curve distribution; the Mg doping concentration profile of the p-type hole expansion layer 104 has a function y=ilog b (m-x)/(m+x)(b>1,m>0) A profile, the p-type hole expansion layer 104H element profile having a cubic function y=e×x 3 +f*x 2 +gx+h distribution, discriminant of cubic function Δ= 4 (f 2 -3e x g) is greater than 0 and e<0 distribution; the p-type hole expansion layer 104O element distribution has a cubic function y=e×x 3 +f*x 2 +gx+h distribution, discriminant of cubic function Δ= 4 (f 2 -3e g) is equal to or less than 0 and e<0 distribution; the p-type hole extension layer 104C element profile has a nonlinear polyline function profile with four break points. The invention improves the transverse and longitudinal expansion capability of ionized holes, increases the transportation and injection efficiency of holes, and improves the ESD passing rate of the semiconductor ultraviolet light-emitting diode from below 60% to above 90% of the 8KV ESD passing rate.
The p-type hole expansion layer 104 is any one or a combination of any several of Al GaN, al N, I N GaN, al I N GaN, gaN and Al I N N, and the thickness is 10-1000 m. The p-type hole expansion layer 104 and the quantum well 103Mg doping concentration profile in combination have a function y=x 2 -e x A curve distribution.
The Mg doping concentration of the p-type hole expansion layer 104 decreases toward the quantum well 103, and the decreasing angle is ρ: 45-90 DEG rho; the distribution of the H element in the p-type hole expansion layer 104 is in a downward trend towards the quantum well 103, and the downward angle is ψ: the psi is more than or equal to 40 and less than or equal to 85 degrees; the O element distribution of the p-type hole expansion layer 104 is in a downward trend toward the quantum well 103, and the downward angle is θ: θ is more than or equal to 40 and less than or equal to 85 degrees; the Si doping concentration distribution of the p-type hole expansion layer 104 decreases toward the quantum well 103, and the decreasing angle is δ: delta is more than or equal to 40 and less than or equal to 85 degrees; the I n element of the p-type hole expansion layer 104 is distributed towards the quantum well 103 in a descending trend, and the descending angle is v: v is more than or equal to 50 and less than or equal to 90 degrees; the peak position of the C element distribution of the p-type hole expansion layer 104 is in a downward trend toward the quantum well 103, and the downward angle is phi: phi is more than or equal to 40 and less than or equal to 80 degrees; the Al element distribution of the p-type hole expansion layer 104 is in a decreasing trend towards the surface direction, and the decreasing angle is κ: 15.ltoreq.κ.ltoreq.70°, the variation angles of Mg doping concentration distribution, si doping concentration distribution, I n element distribution, al element distribution, C element distribution, O element distribution and H element distribution of the p-type hole expanding layer 104 have the following relationship: and kappa phi is less than or equal to theta is less than or equal to delta is less than or equal to rho is less than or equal to v.
The distribution of H element in the quantum well 103 is in a downward trend toward the superlattice layer 102, and the downward angle is α: alpha is more than or equal to 45 and less than or equal to 90 degrees; the Mg doping concentration distribution of the quantum well 103 decreases toward the superlattice layer 102, and the decreasing angle is β: beta is more than or equal to 40 and less than or equal to 85 degrees; the Al element distribution of the superlattice layer 102 is in a downward trend toward the n-type semiconductor 101, and the downward angle is γ: gamma is more than or equal to 35 and less than or equal to 80 degrees; the Si doping concentration distribution of the superlattice layer 102 is in a descending trend towards the quantum well 103, and the descending angle is 30-sigma-75 degrees; the angles of variation of the H element distribution, mg doping concentration distribution, si doping concentration distribution, and Al element distribution of the quantum well 103 and superlattice layer 102 have the following relationship: sigma is less than or equal to gamma is less than or equal to beta is less than or equal to alpha.
In contrast to the above-mentioned decreasing angle, the p-type hole extension layer 104 has the following relationship with the changing angles of the quantum well 103, al element distribution, I n element distribution, H element distribution, C element distribution, O element distribution, si doping concentration distribution, mg doping concentration distribution of the superlattice layer 102: sigma gamma is less than or equal to kappa is less than or equal to phi is less than or equal to beta is less than or equal to alpha is less than or equal to theta is less than or equal to delta is less than or equal to rho.
In the present invention, the superlattice layer 102 is a periodic structure formed by a well layer and a barrier layer, and the period is p: p is more than or equal to 5 and less than or equal to 30; the superlattice layer 102 well layer is any one or a combination of any two of GaN, inGaN and AlInGaN, and the thickness of the superlattice layer 102 well layer is 20-100 angstroms; the superlattice layer 102 barrier layer is any one or a combination of any two of Al GaN, al N, al I nGaN and GaN, and the thickness of the superlattice layer 102 barrier layer is 5-60 Emeter; the thickness of the well layer of the superlattice layer 102 is equal to or greater than that of the superlattice layerBarrier layer thickness of layer 102. The quantum well 103 has a periodic structure formed by a well layer and a barrier layer, and the period of the quantum well 103 is q is more than or equal to 3 and less than or equal to 15; the well layer is any one or the combination of any several of InGaN, alInGaN, alInN and GaN, and the thickness of the well layer is 50-150 meter; the barrier layer is any one or a combination of more than one of GaN, al I N GaN, al GaN and Al N, and the thickness is 5-200 m; the thickness of the barrier layer of the quantum well 103 is greater than or equal to the thickness of the well layer of the quantum well 103; the quantum well 103 emits ultraviolet light having a wavelength of 360 to 375 nm. The N-type semiconductor 101 and the p-type hole expansion layer 104 include GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or a combination of any several of BN, gaAs, gaP, inP, al GaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, al GaP and InGaP. The substrate 100 includes sapphire, silicon, ge, si C, A/N, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/A/L N composite substrate, sapphire/Si N x MgA l of magnesia-alumina spinel 2 O 4 、MgO、ZnO、ZrB 2 、LiA l O 2 And Li GaO 2 Any one of the composite substrates.
The foregoing is merely a preferred embodiment of the present invention, and it should be noted that modifications and variations could be made by those skilled in the art without departing from the technical principles of the present invention, and such modifications and variations should also be regarded as being within the scope of the invention.
Claims (10)
1. The semiconductor ultraviolet light-emitting diode sequentially comprises a substrate (100), an n-type semiconductor (101), a superlattice layer (102), a quantum well (103) and a p-type hole expansion layer (104) from bottom to top, wherein the Mg doping concentration distribution of the p-type hole expansion layer (104) has a function of y=log b (m-x)/(m+x)(b>1,m>0) A curve distribution.
2. The semiconductor ultraviolet light emitting diode as recited in claim 1, wherein the p-type hole expansion layer (104) Al element distribution has a function y= (a) x -1)/(a x +1)(a>1) A curve distribution.
3. A semiconductor violet-light ultraviolet light emitting diode according to claim 1, characterized In that said p-type hole expansion layer (104) In element distribution has a function y = a x -a -x A curve distribution.
4. A semiconductor ultraviolet light emitting diode according to claim 1, wherein the p-type hole expansion layer (104) H element distribution has a cubic function y=e x 3 +f*x 2 +gx+h distribution, discriminant of cubic function Δ= 4 (f 2 -3e x g) is greater than 0 and e<0 distribution; the p-type hole expansion layer (104) O element distribution has a cubic function y=e×x 3 +f*x 2 +gx+h distribution, discriminant of cubic function Δ= 4 (f 2 -3e g) is equal to or less than 0 and e<0 distribution; the p-type hole expansion layer (104) C element distribution has a nonlinear broken line function curve distribution with four break points.
5. The semiconductor ultraviolet light emitting diode according to claim 1, wherein the p-type hole expansion layer (104) is any one or a combination of any several of AlGaN, alN, inGaN, alInGaN, gaN and Al InN, and has a thickness of 10 to 1000 a.
6. A semiconductor violet ultraviolet light emitting diode according to claim 1, characterized in that the p-type hole expansion layer (104) and the quantum well (103) Mg doping concentration profile in combination have a function y = x 2 -e x A curve distribution.
7. The semiconductor ultraviolet light emitting diode according to claim 1, wherein the Mg doping concentration of the p-type hole expansion layer (104) decreases toward the quantum well (103) by an angle ρ: 45-90 DEG rho; the H element distribution of the p-type hole expansion layer (104) is in a descending trend towards the quantum well (103), and the descending angle is psi: the psi is more than or equal to 40 and less than or equal to 85 degrees; o element of the p-type hole expansion layer (104) is distributed towards the quantum well (103) in a descending trend, and the descending angle is theta: θ is more than or equal to 40 and less than or equal to 85 degrees; the Si doping concentration distribution of the p-type hole expansion layer (104) is in a descending trend towards the quantum well (103), and the descending angle is delta: delta is more than or equal to 40 and less than or equal to 85 degrees; the In element distribution of the p-type hole expansion layer (104) is In a descending trend towards the quantum well (103), and the descending angle is upsilon: v is more than or equal to 50 and less than or equal to 90 degrees; the C element distribution peak position of the p-type hole expansion layer (104) is in a descending trend towards the quantum well (103), and the descending angle is phi: phi is more than or equal to 40 and less than or equal to 80 degrees; al element distribution of the p-type hole expansion layer (104) is in a descending trend towards the surface direction, and the descending angle is kappa: 15-k-70 DEG, and the change angles of the Mg doping concentration distribution, the Si doping concentration distribution, the In element distribution, the Al element distribution, the C element distribution, the O element distribution and the H element distribution of the p-type hole expansion layer (104) have the following relationship: and kappa phi is less than or equal to theta is less than or equal to delta is less than or equal to rho is less than or equal to v.
8. The semiconductor ultraviolet light emitting diode according to claim 1, wherein the distribution of H elements of the quantum well (103) decreases toward the superlattice layer (102), and the decreasing angle is α: alpha is more than or equal to 45 and less than or equal to 90 degrees; the Mg doping concentration distribution of the quantum well (103) is in a descending trend towards the superlattice layer (102), and the descending angle is beta: beta is more than or equal to 40 and less than or equal to 85 degrees; al element of the superlattice layer (102) is distributed towards the n-type semiconductor (101) in a descending trend, and the descending angle is gamma: gamma is more than or equal to 35 and less than or equal to 80 degrees; the Si doping concentration distribution of the superlattice layer (102) is in a descending trend towards the quantum well (103), and the descending angle is 30-sigma-75 degrees; the angles of variation of the H element distribution, the Mg doping concentration distribution, the Si doping concentration distribution and the Al element distribution of the quantum well (103) and the superlattice layer (102) have the following relationship: sigma is less than or equal to gamma is less than or equal to beta is less than or equal to alpha.
9. The semiconductor ultraviolet light emitting diode according to claim 7 or 8, wherein the p-type hole extension layer (104) has the following relationship with the angles of variation of the quantum well (103), al element distribution, in element distribution, H element distribution, C element distribution, O element distribution, si doping concentration distribution, mg doping concentration distribution of the superlattice layer (102): sigma gamma is less than or equal to kappa is less than or equal to phi is less than or equal to beta is less than or equal to alpha is less than or equal to theta is less than or equal to delta is less than or equal to rho. The superlattice layer (102) is a periodic structure formed by a well layer and a barrier layer, and the period is p: p is more than or equal to 5 and less than or equal to 30; the superlattice layer (102) well layer is any one or any combination of GaN, inGaN, alInGaN, and the thickness of the superlattice layer (102) well layer is 20-100 angstroms; the barrier layer of the superlattice layer (102) is any one or any combination of AlGaN, alN, alInGaN, gaN, and the thickness of the barrier layer of the superlattice layer (102) is 5-60 Emeter; the thickness of the well layer of the superlattice layer (102) is larger than or equal to the thickness of the barrier layer of the superlattice layer (102).
10. The semiconductor ultraviolet light-emitting diode according to claim 1, wherein the quantum well (103) has a periodic structure composed of a well layer and a barrier layer, and the quantum well (103) has a period q of 3.ltoreq.q.ltoreq.15; the well layer is any one or any combination of InGaN, alInGaN, alInN, gaN, and the thickness of the well layer is 50-150 meter; the barrier layer is any one or a combination of any two of GaN, alInGaN, alGaN, alN, and the thickness is 5-200 m; the barrier layer thickness of the quantum well (103) is larger than or equal to the well layer thickness of the quantum well (103); the n-type semiconductor (101) and the p-type hole expansion layer (104) comprise GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of a plurality of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP; the substrate (100) comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
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