CN108682719A - A kind of multiple quantum well layer, LED epitaxial structure and preparation method thereof - Google Patents

A kind of multiple quantum well layer, LED epitaxial structure and preparation method thereof Download PDF

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CN108682719A
CN108682719A CN201810373165.1A CN201810373165A CN108682719A CN 108682719 A CN108682719 A CN 108682719A CN 201810373165 A CN201810373165 A CN 201810373165A CN 108682719 A CN108682719 A CN 108682719A
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quantum well
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李国强
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Heyuan Zhongtuo Photoelectric Technology Co Ltd
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Heyuan Zhongtuo Photoelectric Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure

Abstract

The invention discloses a kind of multiple quantum well layer, by x InGaN quantum well layer with (x+1) a GaN quantum barrier layers are alternately laminated forms, x >=1；Molar ratio shared by the In components of InGaN quantum well layers is 10% 20%；The doping concentration of 1st GaN quantum barrier layer is 5 × 1017‑1×1019cm‑3, the doping concentration of the 2nd GaN quantum barrier layer is y times of the doping concentration of the 1st GaN quantum barrier layer, and the doping concentration of i-th of GaN quantum barrier layer is the y of the 1st GaN quantum barrier layer doping concentrationi‑1Times, the doping concentration of 0.5 ＜ y ＜, 1,1 ＜ i≤x, (x+1) a GaN quantum barrier layers are 0.The invention also discloses LED epitaxial structures and preparation method thereof.There is the multiple quantum well layer of the present invention gradual change silicon doping quantum to build, under the premise of so that quality of materials is further deteriorated, electron concentration in Quantum Well can be increased and regulate and control light-emitting zone in Quantum Well, to promote the luminous intensity of LED and improve emission wavelength uniformity.

Description

A kind of multiple quantum well layer, LED epitaxial structure and preparation method thereof
Technical field
The invention belongs to technical field of semiconductors, are related to a kind of LED epitaxial structure, more particularly to there is one kind gradual change silicon to mix InGaN/GaN multiple quantum well layers that miscellaneous quantum is built, LED epitaxial structure and preparation method thereof.
Background technology
Light emitting diode (LED) has the characteristics that efficient, energy saving, safe and environment-friendly, long lifespan, has been widely used in all It is multi-field, lead the third generation to illuminate revolution using it as the semiconductor illumination technique of representative.However, facing semiconductor lighting market Demand to high-performance luminescent device, LED technology still face two urgent problems to be solved at present：First, in luminescent active region Polarized electric field generate quantum fetter Stark effect, affect radiation recombination of the carrier in Quantum Well, reduce LED Luminous intensity；The traditional structure of second, LED cause device emission wavelength inconsistent there are more trap luminescence phenomenons in Quantum Well, Wavelength uniformity is poor.Above 2 points limit LED such as communicate in special dimension, the application of military project, also limit high-performance, The further promotion of high power LED device performance.
Invention content
For overcome the deficiencies in the prior art, it is more that one of the objects of the present invention is to provide one kindAmountSub- well layer, it has Gradual change silicon adulterates quantum and builds, under the premise of so that quality of materials is further deteriorated, can increase in Quantum Well electron concentration with And light-emitting zone in regulation and control Quantum Well, to promote the luminous intensity of LED and improve emission wavelength uniformity.
The second object of the present invention is that it includes above-mentioned more to provide a kind ofAmountThe LED epitaxial structure of sub- well layer.
The third object of the present invention is to provide a kind of preparation method including above-mentioned LED epitaxial structure.
An object of the present invention adopts the following technical scheme that realization：
A kind of multiple quantum well layer, which is characterized in that replaced with (x+1) a GaN quantum barrier layers by x InGaN quantum well layer Stacking composition, x >=1；Molar ratio shared by the In components of InGaN quantum well layers is 10%-20%；1st GaN quantum barrier layer Doping concentration is 5 × 1017-1×1019cm-3, the doping concentration of the 2nd GaN quantum barrier layer is the 1st GaN quantum barrier layer Y times of doping concentration, the doping concentration of i-th of GaN quantum barrier layer is the 1st GaN quantum barrier layer doping concentration yi-1Times, the doping concentration of 0.5 ＜ y ＜, 1,1 ＜ i≤x, (x+1) a GaN quantum barrier layers are 0.
Further, the thickness of the InGaN quantum well layers is 3-5nm, and the thickness of the GaN quantum barrier layers is 10- 15nm。
The second object of the present invention adopts the following technical scheme that realization：
A kind of LED epitaxial structure, which is characterized in that it includes Si substrates, grows AlN bufferings successively on a si substrate Layer, AlGaN buffer layers, u-GaN layers, n-GaN layers, the multiple quantum well layer described in an object of the present invention, electronic barrier layer and P-GaN layer.
Further, the AlN buffer layer thicknesses are 1-200nm, and the thickness of the AlGaN buffer layers is 500-700nm, U-GaN layers of the thickness is 600-800nm.
Further, n-GaN layers of the thickness is 2.0-2.5 μm, and Si doping concentrations are 5 × 1018-1×1020cm-3。
Further, the material of the electronic barrier layer is AlGaN, InAlN or AlInGaN, thickness 20-50nm, Mg Doping concentration is 5 × 1017-1×1020cm-3。
Further, the thickness of p-GaN layer is 200-300nm, and Mg doping concentrations are 5 × 1017-1×1020cm-3。
The third object of the present invention adopts the following technical scheme that realization：
A kind of production method of LED epitaxial structure, which is characterized in that including：
1) substrate selecting step：Select Si substrates；
2) AlN buffer layers, AlGaN buffer layers, u-GaN layers, n-GaN layers of growth step：Using Organometallic Chemistry gas Phase depositing operation on a si substrate successively growing AIN buffer layer, AlGaN buffer layers, u-GaN layers, n-GaN layers；
3) multiple quantum well layer growth step：Multiple-quantum is grown at n-GaN layers using metal organic chemical vapor deposition technique Well layer；
4) electronic barrier layer, p-GaN layer growth step：Using metal organic chemical vapor deposition technique in multiple quantum wells Electronic barrier layer, p-GaN layer are grown on layer successively.
Further, in step 2), concrete technology condition is as follows：
The process conditions of AlN buffer layers are：Reaction chamber temperature is 1100 DEG C, chamber pressure 70Torr；
The process conditions of AlGaN buffer layers are：Reaction chamber temperature is 1100 DEG C, chamber pressure 70Torr；
U-GaN layers of process conditions are：Reaction chamber temperature is 1000 DEG C, chamber pressure 200Torr；
N-GaN layers of process conditions are：Reaction chamber temperature is 1000 DEG C, chamber pressure 200Torr.
Further, in step 3), reaction chamber temperature is kept for 800-1000 DEG C, and air pressure remains 200Torr, multiple quantum wells Layer grows x InGaN quantum well layer and (x+1) a GaN quantum barrier layers successively according to the following steps；
3-1) each lead into nitrogen, ammonia, trimethyl gallium and silane, nitrogen, ammonia, trimethyl gallium and silane flow point Not Wei 50-70sccm, 30-50sccm, 100-150sccm, 10-20sccm, 1 silicon of growth regulation doping GaN quantum barrier layers, silicon Doping concentration is 5 × 1017-1×1019cm-3；
3-2) each lead into nitrogen, ammonia, trimethyl gallium and trimethyl indium, nitrogen, ammonia, trimethyl gallium and trimethyl indium Flow be respectively 50-70sccm, 30-50sccm, 450-500sccm, 100-150sccm, grow InGaN quantum well layers；
3-3) each lead into nitrogen, ammonia, trimethyl gallium and silane, nitrogen, ammonia, trimethyl gallium and silane flow point Not Wei 50-70sccm, 30-50sccm, 100-150sccm, 5-20sccm, 2 silicon of growth regulation doping GaN quantum barrier layers, silicon Doping concentration is y times of the doping concentration of the 1st GaN quantum barrier layer, 0.5 ＜ y ＜ 1；
Repeat sub-step 3-2)；
3-i) each lead into nitrogen, ammonia, trimethyl gallium and silane, nitrogen, ammonia, trimethyl gallium and silane flow point Not Wei 50-70sccm, 30-50sccm, 100-150sccm, 1-20sccm, growth i-th of silicon doping GaN quantum barrier layers, silicon Doping concentration is yi-1 times of the doping concentration of the 1st GaN quantum barrier layer, 1 ＜ i≤x；
Repeat sub-step 3-2)；
3-X+1) each lead into nitrogen, ammonia, trimethyl gallium, nitrogen, ammonia, trimethyl gallium flow be respectively 50- 70sccm, 30-50sccm, 100-150sccm, the GaN quantum barrier layers of a silicon doping of growth regulation (x+1), doping concentration 0.
Further, in step 4), concrete technology condition is as follows：
The process conditions of electronic barrier layer are：Reaction chamber temperature is 950 DEG C, chamber pressure 200Torr；
The process conditions of p-GaN layer are：Reaction chamber temperature is 950 DEG C, chamber pressure 200Torr.
Compared with prior art, the beneficial effects of the present invention are：
The InGaN/GaN multiple quantum well layers built with gradual change silicon doping quantum that the present invention is grown use gradual change silicon and mix Miscellaneous quantum is built, and is conducive to the injection for improving the sub- trap of electron vectors, the electron concentration in Quantum Well is made to be maintained at higher level, Conducive to raising luminous intensity；Meanwhile and because in such a way that gradual change reduces doping concentration so that in the crystal for ensureing Quantum Well While quality does not deteriorate, regulate and control light-emitting zone in Quantum Well, to promote the emission wavelength uniformity of LED.
Description of the drawings
Fig. 1 is the LED epitaxial structure schematic diagram in embodiment 1；
In Fig. 1：1, substrate；2, AlN buffer layers；3, AlGaN buffer layers；4, u-GaN layers；5, n-GaN layers；6, multiple quantum wells Layer；61, quantum barrier layer；62, quantum well layer；7, electronic barrier layer；8, p-GaN layer.
Fig. 2 is the optical output power curve of the new construction LED and traditional structure LED in embodiment 1.
In Fig. 2, solid line is new construction LED of the present invention, and dotted line is traditional structure LED.
Fig. 3 is that the emission wavelength Mapping of the new construction LED and traditional structure LED in embodiment 1 schemes.
In Fig. 3, (a) new construction LED of the present invention, (b) traditional structure LED.
Specific embodiment mode
In the following, in conjunction with attached drawing and specific embodiment mode, the present invention is described further, it should be noted that Under the premise of not colliding, new reality can be formed between various embodiments described below or between each technical characteristic in any combination Apply example.In addition to specified otherwise, employed in the present embodiment to material and equipment be commercially available.
A kind of multiple quantum well layer, by x InGaN quantum well layer with (x+1) a GaN quantum barrier layers are alternately laminated forms, x >= 1；Molar ratio shared by the In components of InGaN quantum well layers is 10%-20%；The doping concentration of 1st GaN quantum barrier layer is 5×1017-1×1019cm-3, the doping concentration of the 2nd GaN quantum barrier layer is the doping concentration of the 1st GaN quantum barrier layer Y times, the doping concentration of i-th of GaN quantum barrier layer is the y of the 1st GaN quantum barrier layer doping concentrationi-1Times, 0.5 ＜ y The doping concentration of 1,1 ＜ i≤x of ＜, (x+1) a GaN quantum barrier layers are 0.
As preferred embodiment, the thickness of the InGaN quantum well layers is 3-5nm, the thickness of the GaN quantum barrier layers Degree is 10-15nm.
A kind of LED epitaxial structure comprising Si substrates grow AlN buffer layers, AlGaN bufferings successively on a si substrate Layer, u-GaN layers, n-GaN layers, InGaN/GaN multiple quantum well layers, electronic barrier layer and p- described in an object of the present invention GaN layer.
As preferred embodiment, the AlN buffer layer thicknesses are 1-200nm, and the thickness of the AlGaN buffer layers is 500-700nm, u-GaN layers of the thickness are 600-800nm.
As preferred embodiment, n-GaN layers of the thickness is 2.0-2.5 μm, and Si doping concentrations are 5 × 1018-1 ×1020cm-3。
As preferred embodiment, the material of the electronic barrier layer is AlGaN, InAlN or AlInGaN, and thickness is 20-50nm, Mg doping concentration are 5 × 1017-1×1020cm-3。
As preferred embodiment, the thickness of the p-GaN layer is 200-300nm, and Mg doping concentrations are 5 × 1017-1 ×1020cm-3。
A kind of production method of LED epitaxial structure, including：
1) substrate selecting step：Select Si substrates；
2) AlN buffer layers, AlGaN buffer layers, u-GaN layers, n-GaN layers of growth step：Using Organometallic Chemistry gas Phase depositing operation on a si substrate successively growing AIN buffer layer, AlGaN buffer layers, u-GaN layers, n-GaN layers；
3) multiple quantum well layer growth step：Multiple-quantum is grown at n-GaN layers using metal organic chemical vapor deposition technique Well layer；
4) electronic barrier layer, p-GaN layer growth step：Using metal organic chemical vapor deposition technique in multiple quantum wells Electronic barrier layer, p-GaN layer are grown on layer successively.
As preferred embodiment, in step 2), concrete technology condition is as follows：
The process conditions of AlN buffer layers are：Reaction chamber temperature is 1100 DEG C, chamber pressure 70Torr；
The process conditions of AlGaN buffer layers are：Reaction chamber temperature is 1100 DEG C, chamber pressure 70Torr；
U-GaN layers of process conditions are：Reaction chamber temperature is 1000 DEG C, chamber pressure 200Torr；
N-GaN layers of process conditions are：Reaction chamber temperature is 1000 DEG C, chamber pressure 200Torr.
As preferred embodiment, in step 3), reaction chamber temperature is kept for 800-1000 DEG C, and air pressure remains 200Torr, multiple quantum well layer grow x InGaN quantum well layer and (x+1) a GaN quantum barrier layers successively according to the following steps；
3-1) each lead into nitrogen, ammonia, trimethyl gallium and silane, nitrogen, ammonia, trimethyl gallium and silane flow point Not Wei 50-70sccm, 30-50sccm, 100-150sccm, 10-20sccm, 1 silicon of growth regulation doping GaN quantum barrier layers, silicon Doping concentration is 5 × 1017-1×1019cm-3；
3-2) each lead into nitrogen, ammonia, trimethyl gallium and trimethyl indium, nitrogen, ammonia, trimethyl gallium and trimethyl indium Flow be respectively 50-70sccm, 30-50sccm, 450-500sccm, 100-150sccm, grow InGaN quantum well layers；
3-3) each lead into nitrogen, ammonia, trimethyl gallium and silane, nitrogen, ammonia, trimethyl gallium and silane flow point Not Wei 50-70sccm, 30-50sccm, 100-150sccm, 5-20sccm, 2 silicon of growth regulation doping GaN quantum barrier layers, silicon Doping concentration is y times of the doping concentration of the 1st GaN quantum barrier layer, 0.5 ＜ y ＜ 1；
Repeat sub-step 3-2)；
3-i) each lead into nitrogen, ammonia, trimethyl gallium and silane, nitrogen, ammonia, trimethyl gallium and silane flow point Not Wei 50-70sccm, 30-50sccm, 100-150sccm, 1-20sccm, growth i-th of silicon doping GaN quantum barrier layers, silicon Doping concentration is yi-1 times of the doping concentration of the 1st GaN quantum barrier layer, 1 ＜ i≤x；
Repeat sub-step 3-2)；
3-X+1) each lead into nitrogen, ammonia, trimethyl gallium, nitrogen, ammonia, trimethyl gallium flow be respectively 50- 70sccm, 30-50sccm, 100-150sccm, the GaN quantum barrier layers of a silicon doping of growth regulation (x+1), doping concentration 0.
As preferred embodiment, in step 4), concrete technology condition is as follows：
The process conditions of electronic barrier layer are：Reaction chamber temperature is 950 DEG C, chamber pressure 200Torr；
The process conditions of p-GaN layer are：Reaction chamber temperature is 950 DEG C, chamber pressure 200Torr.
Embodiment 1：
It referring to Fig.1, should the present invention provides a kind of InGaN/GaN multiple quantum well layers built with gradual change silicon doping quantum Structure by x InGaN quantum well layer with (x+1) a GaN quantum barrier layers are alternately laminated forms, x >=1；The thickness of InGaN quantum well layers Degree is 3-5nm；The molar ratio of the In components of InGaN quantum well layers is 0.1-0.2；The thickness of GaN quantum barrier layers is 10- 15nm；The doping concentration of 1st GaN quantum barrier layer is 5 × 1017-1×1019cm-3, the silicon doping of the 2nd GaN quantum barrier layer Y times of the doping concentration of a concentration of 1st GaN quantum barrier layer ... the doping concentration of i-th of GaN quantum barrier layer is the 1st The y of a GaN quantum barrier layers doping concentrationi-1Times, 0.5 ＜ y ＜, 1,1 ＜ i≤x, the silicon doping of (x+1) a GaN quantum barrier layers A concentration of 0.
Including the LED epitaxial structure of the InGaN/GaN multiple quantum well layers with gradual change silicon doping quantum base is from bottom to top Including：The GaN that substrate 1, AlN buffer layers 2, AlGaN buffer layers 3, u-GaN layers 4, n-GaN layers 5, multiple quantum well layer 6, silicon adulterate Quantum barrier layer 61, InGaN quantum well layers 62, electronic barrier layer 7, p-GaN layer 8.
Outside the disclosed LED comprising the InGaN/GaN multiple quantum well layers with gradual change silicon doping quantum base of the present embodiment Prolong structure comprising Si substrates 1, thickness are the AlN buffer layers 2 of 90nm, and thickness is the AlGaN buffer layers 3 of 500nm, and thickness is The undoped u-GaN layers 4 of 600nm, thickness is 2.0 μm, Si doping concentrations are 5 × 1018cm-3N-GaN layers 5, overall thickness is The InGaN/GaN multiple quantum well layers 6 of 75nm built with gradual change silicon doping quantum be (the GaN quantum barrier layers 61 that wherein, silicon adulterates Thickness is 10nm, and the thickness of InGaN quantum well layers 62 is 3nm, and the doping concentration of the 1st GaN quantum barrier layer is 5 × 1017cm-3, the doping concentration of the 2nd GaN quantum barrier layer is 0.5 times of the 1st GaN quantum barrier layer doping concentration, i-th of GaN amount The doping concentration of sub- barrier layer is 0.5i-1 times of the 1st GaN quantum barrier layer doping concentration, the silicon of the 6th GaN quantum barrier layer Doping concentration is that 0), thickness 20nm, Mg doping concentration is 5 × 1017cm-3Electronic barrier layer 7 and thickness be 200nm, Mg mix Miscellaneous a concentration of 5 × 1017cm-3P-GaN layer 8.
Steps are as follows for the preparation method of GaN base LED epitaxial wafer with this kind of epitaxial structure：
1) at room temperature, single crystalline Si (111) substrate is put into 15% hydrofluoric acid solution and is cleaned by ultrasonic 5 seconds, then uses deionization Water is cleaned by ultrasonic, finally spare with high-purity drying nitrogen drying substrate；
2) single crystalline Si (111) substrate is sent into MOCVD reative cells, reaction chamber temperature remains 1100 DEG C, and air pressure is kept For 70Torr, it being passed through nitrogen, hydrogen, ammonia, trimethyl aluminium, flow is respectively 70sccm, 10sccm, 8sccm, 260sccm, Grown AlN buffer layers 2, thickness 90nm；Reaction chamber temperature remains 1100 DEG C, and air pressure remains 70Torr, is passed through Nitrogen, hydrogen, ammonia, trimethyl aluminium, flow is respectively 70sccm, 10sccm, 8sccm, 260sccm, on AlN buffer layers 2 Grow AlGaN buffer layers 3, thickness 500nm；Answer room temperature to remain 1000 DEG C, air pressure remains 200Torr, be passed through hydrogen, Ammonia, trimethyl aluminium, trimethyl gallium, flow is respectively 70sccm, 8sccm, 250sccm, 60sccm, on AlGaN buffer layers 3 Grow u-GaN layers 4, thickness 600nm；Room temperature is answered to remain 1000 DEG C, air pressure remains 200Torr, is passed through nitrogen, hydrogen Gas, ammonia, trimethyl gallium, silane, flow is respectively 65sccm, 120sccm, 50sccm, 400sccm, 150sccm, in step 4 N-GaN layers 5 are grown on the u-GaN layers 4, thickness is 2 μm, and Si doping concentrations are 5 × 1018cm-3；
3) reaction chamber temperature is kept for 800-1000 DEG C, and air pressure remains 200Torr, and there is gradual change silicon doping quantum to build for growth InGaN/GaN multiple quantum well layers 6, wherein growing 5 InGaN quantum well layers and 6 GaN quantum barrier layers according to following sub-step；
Sub-step (a1), reaction chamber temperature are kept for 800 DEG C, are passed through nitrogen, ammonia, trimethyl gallium and silane, nitrogen, ammonia The flow of gas, trimethyl gallium and silane is respectively 50sccm, 30sccm, 100sccm, 10sccm, the N-shaped GaN described in step 5 The GaN quantum barrier layers 61 of 1 silicon of growth regulation doping on layer 5, thickness 10nm, doping concentration are 5 × 1017cm-3；
Sub-step (b), reaction chamber temperature are kept for 1000 DEG C, are passed through nitrogen, ammonia, trimethyl gallium and trimethyl indium, nitrogen, The flow of ammonia, trimethyl gallium and trimethyl indium is respectively 50sccm, 30sccm, 450sccm, 100sccm, at sub-step (a1) Growth InGaN quantum well layers 62 on the 1st silicon doping GaN quantum barrier layers 61, the molar ratio of thickness 10nm, In component Example is 10%；
Sub-step (a2), reaction chamber temperature are kept for 800 DEG C, are passed through nitrogen, ammonia, trimethyl gallium and silane, nitrogen, ammonia The flow of gas, trimethyl gallium and silane is respectively 50sccm, 30sccm, 100sccm, 5sccm, described in sub-step (b) The GaN quantum barrier layers that 2 silicon of growth regulation adulterates on InGaN quantum well layers 62, thickness 10nm, doping concentration are the 1st GaN 0.5 times of the doping concentration of quantum barrier layer；
Repeat sub-step (b)；
……
Sub-step (ai), reaction chamber temperature are kept for 800 DEG C, are passed through nitrogen, ammonia, trimethyl gallium and silane, nitrogen, ammonia The flow of gas, trimethyl gallium and silane is respectively 50sccm, 30sccm, 100sccm, 1sccm, the GaN of growth i-th of silicon doping Quantum barrier layer, thickness 10nm, doping concentration are 0.5i-1 times of doping concentration of the 1st GaN quantum barrier layer, 1 ＜ i≤ 5；
Repeat sub-step (b)；
Sub-step (a6), reaction chamber temperature are kept for 800 DEG C, are passed through nitrogen, hydrogen, ammonia, trimethyl gallium, growth regulation 6 The GaN quantum barrier layers of silicon doping, thickness 10nm, doping concentration 0；
4) reaction chamber temperature remains 950 DEG C, and air pressure remains 200Torr, is passed through nitrogen, ammonia, two luxuriant magnesium, trimethyl Gallium and trimethyl aluminium, flow is respectively 100sccm, 10sccm, 60sccm, 75sccm, 600sccm, in InGaN/GaN Multiple-quantums Electronic barrier layer 7, thickness 20nm, Mg doping concentration 5 × 10 are grown on trap 617cm-3；Reaction chamber temperature is kept for 950 DEG C, air pressure Remain 200Torr, be passed through nitrogen, hydrogen, ammonia, trimethyl gallium and two luxuriant magnesium, flow be respectively 65sccm, 120sccm, 50sccm, 50sccm and 300sccm, on electronic barrier layer 7 grow p-GaN layer 8, thickness 200nm, doping concentration be 5 × 1017cm-3；
The present embodiment uses the multiple quantum well layer 6 built with gradual change silicon doping quantum, and the silicon during the 1st quantum is built adulterates At concentrations up to 5 × 1017cm-3, the electron concentration in Quantum Well can be significantly increased so that have more electronics that can participate in In the radiation recombination of LED, to improve the luminous intensity of LED；Simultaneously as using gradual change reduces the side of doping concentration Method, can be with the light-emitting zone in Effective Regulation Quantum Well, to promote the emission wavelength uniformity of LED.By the LED of traditional structure Contrast verification is carried out with new construction LED proposed by the present invention, using completely the same chip processing procedure the epitaxial wafer of two kinds of structures It is fabricated to LED chip, and the luminescent properties of the two are tested under identical conditions, the results are shown in Figure 2, in Injection Current For under 700mA, the optical output power of traditional structure LED is 467.5mW, and the light output work(of new construction LED proposed by the present invention Rate is 528.7mW, and the luminous power compared with traditional structure LED improves 13%.Using PL spectrometers to traditional structure LED and new construction The emission wavelength uniformity of LED is characterized, and the results are shown in Figure 3, and the emission wavelength uniformity of traditional structure LED is poor, mark Quasi- difference is 3.83nm, and the emission wavelength uniformity of new construction LED is more preferable, and standard deviation is only 1.74nm.
Embodiment 2：
The characteristics of the present embodiment is：Step 3) reaction chamber temperature is kept for 800-1000 DEG C, and air pressure remains 200Torr, raw The long InGaN/GaN multiple quantum well layers 6 that there is gradual change silicon doping quantum to build, wherein growing 4 InGaN quantum according to following sub-step Well layer and 5 GaN quantum barrier layers；It is other same as Example 1.
Embodiment 3：
The characteristics of the present embodiment is：Step 3) reaction chamber temperature is kept for 800-1000 DEG C, and air pressure remains 200Torr, raw The long InGaN/GaN multiple quantum well layers 6 that there is gradual change silicon doping quantum to build, wherein growing 6 InGaN quantum according to following sub-step Well layer and 7 GaN quantum barrier layers；It is other same as Example 1.
Embodiment 4：
The characteristics of the present embodiment is：Step 3) reaction chamber temperature is kept for 800-1000 DEG C, and air pressure remains 200Torr, raw The long InGaN/GaN multiple quantum well layers 6 that there is gradual change silicon doping quantum to build, wherein growing 7 InGaN quantum according to following sub-step Well layer and 8 GaN quantum barrier layers；It is other same as Example 1.
The above embodiment is merely a preferred embodiment of the present invention mode, cannot limit the model protected of the present invention with this It encloses, the variation and replacement of any unsubstantiality that those skilled in the art is done on the basis of the present invention belong to the present invention Range claimed.

Claims (10)

1. a kind of multiple quantum well layer, which is characterized in that by x InGaN quantum well layer and (x+1) a GaN quantum barrier layers alternating layer It is stacked, x >=1；Molar ratio shared by the In components of InGaN quantum well layers is 10%-20%；The silicon of 1st GaN quantum barrier layer Doping concentration is 5 × 1017-1×1019cm-3, the doping concentration of the 2nd GaN quantum barrier layer is the 1st GaN quantum barrier layer Y times of doping concentration, the doping concentration of i-th of GaN quantum barrier layer are the y of the 1st GaN quantum barrier layer doping concentrationi-1 Times, the doping concentration of 0.5 ＜ y ＜, 1,1 ＜ i≤x, (x+1) a GaN quantum barrier layers are 0.
2. multiple quantum well layer as described in claim 1, which is characterized in that the thickness of the InGaN quantum well layers is 3-5nm, The thickness of the GaN quantum barrier layers is 10-15nm.
3. a kind of LED epitaxial structure, which is characterized in that it includes Si substrates, grow successively on a si substrate AlN buffer layers, AlGaN buffer layers, u-GaN layers, n-GaN layers, the multiple quantum well layer as described in claim 1-2 any one, electronic barrier layer And p-GaN layer.
4. LED epitaxial structure as claimed in claim 3, which is characterized in that the AlN buffer layer thicknesses are 1-200nm, described The thickness of AlGaN buffer layers is 500-700nm, and u-GaN layers of the thickness is 600-800nm, and n-GaN layers of the thickness is 2.0-2.5 μm, Si doping concentrations are 5 × 1018-1×1020cm-3。
5. LED epitaxial structure as claimed in claim 2, which is characterized in that the material of the electronic barrier layer be AlGaN, InAlN or AlInGaN, thickness 20-50nm, Mg doping concentration are 5 × 1017-1×1020cm-3。
6. LED epitaxial structure as claimed in claim 2, which is characterized in that the thickness of p-GaN layer is 200-300nm, Mg doping A concentration of 5 × 1017-1×1020cm-3。
7. the production method of the LED epitaxial structure as described in claim 3-6 any one, which is characterized in that including：
1) substrate selecting step：Select Si substrates；
2) AlN buffer layers, AlGaN buffer layers, u-GaN layers, n-GaN layers of growth step：It is heavy using Metallo-Organic Chemical Vapor Product technique on a si substrate successively growing AIN buffer layer, AlGaN buffer layers, u-GaN layers, n-GaN layers；
3) multiple quantum well layer growth step：Multiple quantum well layer is grown at n-GaN layers using metal organic chemical vapor deposition technique；
4) electronic barrier layer, p-GaN layer growth step：Using metal organic chemical vapor deposition technique on multiple quantum well layer Electronic barrier layer, p-GaN layer are grown successively.
8. the production method of LED epitaxial structure as claimed in claim 7, which is characterized in that in step 2), concrete technology condition It is as follows：
The process conditions of AlN buffer layers are：Reaction chamber temperature is 1100 DEG C, chamber pressure 70Torr；
The process conditions of AlGaN buffer layers are：Reaction chamber temperature is 1100 DEG C, chamber pressure 70Torr；
U-GaN layers of process conditions are：Reaction chamber temperature is 1000 DEG C, chamber pressure 200Torr；
N-GaN layers of process conditions are：Reaction chamber temperature is 1000 DEG C, chamber pressure 200Torr.
9. the production method of LED epitaxial structure as claimed in claim 7, which is characterized in that in step 3), reaction chamber temperature is protected Hold 800-1000 DEG C, air pressure remains 200Torr, multiple quantum well layer grow successively according to the following steps x InGaN quantum well layer and (x+1) a GaN quantum barrier layers；
3-1) each lead into nitrogen, ammonia, trimethyl gallium and silane, nitrogen, ammonia, trimethyl gallium and silane flow be respectively 50-70sccm, 30-50sccm, 100-150sccm, 10-20sccm, the GaN quantum barrier layers of 1 silicon of growth regulation doping, silicon doping A concentration of 5 × 1017-1×1019cm-3；
3-2) each lead into nitrogen, ammonia, trimethyl gallium and trimethyl indium, nitrogen, ammonia, trimethyl gallium and trimethyl indium stream Amount is respectively 50-70sccm, 30-50sccm, 450-500sccm, 100-150sccm, grows InGaN quantum well layers；
3-3) each lead into nitrogen, ammonia, trimethyl gallium and silane, nitrogen, ammonia, trimethyl gallium and silane flow be respectively 50-70sccm, 30-50sccm, 100-150sccm, 5-20sccm, the GaN quantum barrier layers of 2 silicon of growth regulation doping, silicon doping Y times of the doping concentration of a concentration of 1st GaN quantum barrier layer, 0.5 ＜ y ＜ 1；
Repeat sub-step 3-2)；
3-i) each lead into nitrogen, ammonia, trimethyl gallium and silane, nitrogen, ammonia, trimethyl gallium and silane flow be respectively 50-70sccm, 30-50sccm, 100-150sccm, 1-20sccm, the GaN quantum barrier layers of growth i-th of silicon doping, silicon doping Yi-1 times of the doping concentration of a concentration of 1st GaN quantum barrier layer, 1 ＜ i≤x；
Repeat sub-step 3-2)；
3-X+1) each lead into nitrogen, ammonia, trimethyl gallium, nitrogen, ammonia, trimethyl gallium flow be respectively 50-70sccm, 30-50sccm, 100-150sccm, the GaN quantum barrier layers of a silicon doping of growth regulation (x+1), doping concentration 0.
10. the production method of LED epitaxial structure as claimed in claim 7, which is characterized in that in step 4), concrete technology item Part is as follows：
The process conditions of electronic barrier layer are：Reaction chamber temperature is 950 DEG C, chamber pressure 200Torr；
The process conditions of p-GaN layer are：Reaction chamber temperature is 950 DEG C, chamber pressure 200Torr.
CN201810373165.1A 2018-04-24 2018-04-24 A kind of multiple quantum well layer, LED epitaxial structure and preparation method thereof Pending CN108682719A (en)

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CN110459654A (en) * 2019-08-07 2019-11-15 晶能光电（江西）有限公司 Ultraviolet LED epitaxial structure
CN110707187A (en) * 2019-08-21 2020-01-17 华灿光电(苏州）有限公司 Epitaxial wafer of small-spacing light-emitting diode and manufacturing method thereof
CN110718612A (en) * 2019-08-30 2020-01-21 华灿光电（浙江）有限公司 Light emitting diode epitaxial wafer and manufacturing method thereof
CN113257962A (en) * 2021-05-11 2021-08-13 东南大学 Ultraviolet light-emitting diode with p-i-n type multi-quantum well structure
CN116504889A (en) * 2023-04-28 2023-07-28 江西兆驰半导体有限公司 Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode

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CN109768125A (en) * 2018-12-29 2019-05-17 晶能光电（江西）有限公司 Silicon substrate epitaxial wafer growth method
CN110459654A (en) * 2019-08-07 2019-11-15 晶能光电（江西）有限公司 Ultraviolet LED epitaxial structure
CN110707187A (en) * 2019-08-21 2020-01-17 华灿光电(苏州）有限公司 Epitaxial wafer of small-spacing light-emitting diode and manufacturing method thereof
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CN116504889B (en) * 2023-04-28 2024-02-23 江西兆驰半导体有限公司 Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode

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