CN103904177B - LED epitaxial slice and its manufacture method - Google Patents
LED epitaxial slice and its manufacture method Download PDFInfo
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- CN103904177B CN103904177B CN201410072064.2A CN201410072064A CN103904177B CN 103904177 B CN103904177 B CN 103904177B CN 201410072064 A CN201410072064 A CN 201410072064A CN 103904177 B CN103904177 B CN 103904177B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 33
- 239000010980 sapphire Substances 0.000 claims abstract description 33
- 239000000470 constituent Substances 0.000 claims abstract description 17
- 229910002601 GaN Inorganic materials 0.000 claims description 30
- 229910002704 AlGaN Inorganic materials 0.000 claims description 6
- 238000010899 nucleation Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N AI2O3 Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 11
- 229910052593 corundum Inorganic materials 0.000 description 11
- 229910001845 yogo sapphire Inorganic materials 0.000 description 11
- 239000000126 substance Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N Trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N Trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N Trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006011 modification reaction Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
Abstract
The invention discloses a kind of LED epitaxial slice and its manufacture method, belong to technical field of semiconductors.The epitaxial wafer, which includes Sapphire Substrate and the cushion being sequentially laminated in the Sapphire Substrate, nucleating layer, layer of undoped gan, N-type layer, active layer, P-type layer, the nucleating layer, includes multiple AlxGa1‑xN layers, 0 ＜ x ＜ 1, the multiple AlxGa1‑xThe direction of growth of the Al constituent contents of N layers along the epitaxial wafer is successively reduced.For the present invention by adding nucleating layer between Sapphire Substrate and layer of undoped gan, nucleating layer includes multiple AlxGa1‑xN layers, 0 ＜ x ＜ 1, lattice between layer of undoped gan and substrate can be avoided to mismatch.And multiple AlxGa1‑ xThe direction of growth of the Al constituent contents of N layers along epitaxial wafer is successively reduced, and improves the angularity of the epitaxial layer finally to grow out, and for photoelectric properties than more uniform, crystal mass is preferable in epitaxial wafer.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of LED epitaxial slice and its manufacture method.
Background technology
LED (Light Emitting Diode, light emitting diode) is a kind of semiconductor electronic component that can be luminous.LED
Epitaxial wafer is the raw material of the chip growth inside LED.
Existing LED generally include Sapphire Substrate and grow successively on a sapphire substrate undoped with
GaN layer, N-type GaN layer, active layer, p-type GaN layer.
During the present invention is realized, inventor has found that prior art at least has problems with：
Layer of undoped gan is grown on a sapphire substrate, because sapphire key component is Al2O3, Al2O3With GaN it
Between lattice mismatch it is larger, therefore between layer of undoped gan and substrate lattice mismatch, and then influence growth undoped with GaN
The crystal mass of crystalline substance is built after layer, it is larger to ultimately cause the angularity of the epitaxial layer to grow out, and photoelectric properties are uneven in epitaxial wafer
Even, crystal mass is poor.
The content of the invention
Larger in order to solve the angularity of prior art epitaxial layer, the problem of crystal mass is poor, the embodiment of the present invention carries
A kind of LED epitaxial slice and its manufacture method are supplied.The technical scheme is as follows：
On the one hand, the present invention implements to provide a kind of LED epitaxial slice, the epitaxial wafer include Sapphire Substrate,
And cushion in the Sapphire Substrate, layer of undoped gan, N-type layer, active layer, P-type layer are sequentially laminated on, it is described outer
Prolonging piece also includes nucleating layer, and between the cushion and the layer of undoped gan, the nucleating layer includes the nucleating layer
Multiple AlxGa1-xN layers, 0 ＜ x ＜ 1, the multiple AlxGa1-xThe direction of growth of the Al constituent contents of N layers along the epitaxial wafer by
Layer is reduced, and the thickness of the nucleating layer is 200nm-500nm；The layer of undoped gan is multicycle structure, and each cycle includes
AlGaN layer and GaN layer.
Alternatively, the nucleating layer is multicycle structure, and each cycle includes AlxGa1-xN layers and GaN layer.
Further, the periodicity of the multicycle structure of the nucleating layer is at least 3.
Preferably, the undoped buffer layer has Al.
Alternatively, the active layer is multicycle structure, and each cycle includes InGaN layer and GaN layer, or each cycle
Including InGaN layer and AlGaN layer.
Alternatively, the P-type layer includes multiple p-type AlInGaN layers, and in each p-type AlInGaN layers Mg doping concentration not
Together, or the P-type layer is multicycle structure, and each cycle includes p-type AlInGaN layers and p-type GaN layer.
Alternatively, the epitaxial wafer also includes p-type contact layer, and the p-type contact layer includes GaN layer, the p-type contact layer
It is layered in the P-type layer.
On the other hand, the embodiments of the invention provide a kind of method for manufacturing foregoing LED epitaxial slice, the side
Method includes：On a sapphire substrate successively grown buffer layer, nucleating layer, layer of undoped gan, N-type layer, active layer, P-type layer, with
And p-type contact layer.
The beneficial effect that technical scheme provided in an embodiment of the present invention is brought is：
By adding nucleating layer between Sapphire Substrate and layer of undoped gan, nucleating layer includes multiple AlxGa1-xN layers,
0 ＜ x ＜ 1, because sapphire key component is Al2O3, AlxGa1-xN and Al2O3, the lattice match between GaN it is preferable,
Therefore nucleating layer can avoid lattice between layer of undoped gan and substrate from mismatching.And multiple AlxGa1-xThe Al components of N layers
The direction of growth of the content along epitaxial wafer is successively reduced, that is to say, that close to Sapphire Substrate nucleating layer Al constituent contents compared with
Height, the Al constituent contents close to the nucleating layer of layer of undoped gan are relatively low, further increase between layer of undoped gan and substrate
Lattice match, reduce to growth layer of undoped gan after build crystalline substance crystal mass influence, improve and finally grow out
Epitaxial layer angularity, for photoelectric properties than more uniform, crystal mass is preferable in epitaxial wafer.
Brief description of the drawings
Technical scheme in order to illustrate the embodiments of the present invention more clearly, make required in being described below to embodiment
Accompanying drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for
For those of ordinary skill in the art, on the premise of not paying creative work, other can also be obtained according to these accompanying drawings
Accompanying drawing.
Fig. 1 is a kind of structural representation for LED epitaxial slice that the embodiment of the present invention one provides；
Fig. 2 is the structural representation for the nucleating layer that the embodiment of the present invention two provides；
Fig. 3 is a kind of flow chart of the method for manufacture LED epitaxial slice that the embodiment of the present invention three provides.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiment one
The embodiments of the invention provide a kind of LED epitaxial slice, and referring to Fig. 1, the epitaxial wafer includes Sapphire Substrate
1 and stack gradually cushion 2 on a sapphire substrate, nucleating layer 3, layer of undoped gan 4, N-type layer 5, active layer 6, p-type
Layer 7.
In the present embodiment, between cushion 2 and layer of undoped gan 4, nucleating layer 3 includes multiple nucleating layer 3
AlxGa1-xN layers, 0 ＜ x ＜ 1, multiple AlxGa1-xThe direction of growth of the Al constituent contents of N layers along epitaxial wafer is successively reduced.
Alternatively, the thickness of nucleating layer 3 can be at least 200nm.When the thickness of nucleating layer is less than 200nm, due into
Stratum nucleare is relatively thin, and the component in nucleating layer can only reduce the crystal mismatch between Sapphire Substrate and layer of undoped gan slightly, finally
The angularity of the epitaxial layer to grow out or larger.And the thickness of nucleating layer can be obviously improved final when being at least 200nm
The angularity of the epitaxial layer to grow out.
Preferably, the thickness of nucleating layer 3 can be 200nm-500nm, the epitaxial layer that can be finally grown out in improvement
Angularity while, ensure nucleating layer will not be blocked up.
Preferably, cushion 2 can reduce Al doped with Al2O3Lattice mismatch between GaN, further changes
The angularity of the kind epitaxial layer finally to grow out.
Alternatively, layer of undoped gan 4 can be multicycle structure, each cycle AlGaN layer and GaN layer, can effective mistake
The defects of GaN film is filtered, improves crystal mass, so as to improve the antistatic effect of light emitting diode, improves light emitting diode
Reliability and stability.
Alternatively, active layer 6 can be multicycle structure, and each cycle includes InGaN layer and GaN layer, or each week
Phase includes InGaN layer and AlGaN layer, can reduce electronics and probability that hole is escaped from from SQW, and electronics and hole are limited
System improves electronics and the combined efficiency in hole, and then improve the luminous efficiency of light emitting diode in SQW.
Alternatively, P-type layer 7 can include multiple p-type AlInGaN layers, and in each p-type AlInGaN layers Mg doping concentration
Difference, or P-type layer 7 are multicycle structure, and each cycle includes p-type AlInGaN layers and p-type GaN layer.When P-type layer includes
Multiple p-type AlInGaN layers, and it has been roughened epitaxial wafer surface during Mg doping concentration difference in each p-type AlInGaN layers, it will meet
The light for being totally reflected law changes direction, destroys total reflection of the light inside epitaxial wafer, improves the light extraction efficiency of epitaxial wafer,
So as to improve the outer blaze photo-quantum efficiency of light emitting diode.When P-type layer 7 is multicycle structure, and each cycle includes p-type
When AlInGaN layers and p-type GaN layer, the stress between each layer in epitaxial wafer can be discharged, while reduces the difficulty of hole injection
Degree, so as to improve the combined efficiency of electronics and hole, improves the luminous efficiency of light emitting diode.
Alternatively, the epitaxial wafer can also include p-type contact layer, and the p-type contact layer includes GaN layer, and the p-type contacts layer by layer
It is stacked in P-type layer 7, the contact between electrode and P-type layer can be improved.
The embodiment of the present invention includes more by adding nucleating layer, nucleating layer between Sapphire Substrate and layer of undoped gan
Individual AlxGa1-xN layers, 0 ＜ x ＜ 1, because sapphire key component is Al2O3, AlxGa1-xN and Al2O3, lattice between GaN
Matching degree is preferable, therefore nucleating layer can avoid lattice between layer of undoped gan and substrate from mismatching.It is and multiple
AlxGa1-xThe direction of growth of the Al constituent contents of N layers along epitaxial wafer successively reduce, that is to say, that close to Sapphire Substrate into
The Al constituent contents of stratum nucleare are higher, and the Al constituent contents close to the nucleating layer of layer of undoped gan are relatively low, further increase and do not mix
Lattice match between miscellaneous GaN layer and substrate, the influence of the crystal mass to building crystalline substance after growth layer of undoped gan is reduced,
The angularity of the epitaxial layer finally to grow out is improved, for photoelectric properties than more uniform, crystal mass is preferable in epitaxial wafer.
Embodiment two
The embodiments of the invention provide a kind of LED epitaxial slice, referring to Fig. 2, the structure and embodiment of the epitaxial wafer
The structure of one epitaxial wafer provided is essentially identical, and difference is, nucleating layer 3 is multicycle structure, and each cycle includes
AlxGa1-xN layers 31 and GaN layer 32.
Preferably, the periodicity of multicycle structure can be at least 3, and such as 6, can substantially it discharge in epitaxial wafer between each layer
Stress, the internal quantum of light emitting diode is improved, so as to improve the luminous efficiency of light emitting diode.
The embodiment of the present invention includes more by adding nucleating layer, nucleating layer between Sapphire Substrate and layer of undoped gan
Individual AlxGa1-xN layers, 0 ＜ x ＜ 1, because sapphire key component is Al2O3, AlxGa1-xN and Al2O3, lattice between GaN
Matching degree is preferable, therefore nucleating layer can avoid lattice between layer of undoped gan and substrate from mismatching.It is and multiple
AlxGa1-xThe direction of growth of the Al constituent contents of N layers along epitaxial wafer successively reduce, that is to say, that close to Sapphire Substrate into
The Al constituent contents of stratum nucleare are higher, and the Al constituent contents close to the nucleating layer of layer of undoped gan are relatively low, further increase and do not mix
Lattice match between miscellaneous GaN layer and substrate, the influence of the crystal mass to building crystalline substance after growth layer of undoped gan is reduced,
The angularity of the epitaxial layer finally to grow out is improved, for photoelectric properties than more uniform, crystal mass is preferable in epitaxial wafer.And
Nucleating layer is multicycle structure, can discharge the stress between each layer in epitaxial wafer, further improve crystal mass.
Embodiment three
The embodiments of the invention provide a kind of method for manufacturing foregoing LED epitaxial slice, referring to Fig. 3, this method bag
Include：Grown buffer layer, nucleating layer, layer of undoped gan, N-type layer, active layer, P-type layer and p-type successively on a sapphire substrate
Contact layer.
Specifically, this method may comprise steps of：
Step 301：One Sapphire Substrate is provided.
Specifically, by Sapphire Substrate in MOCVD (Metal Organic Chemical Vapor Deposition, gold
Category organic compound chemical gaseous phase deposition) 1060 DEG C are heated in reaction chamber, Sapphire Substrate is moved back in hydrogen atmosphere
Fire processing and nitrogen treatment 10 minutes, to clean substrate surface.
Step 302：Grown buffer layer successively on a sapphire substrate.
Specifically, the growth temperature of cushion is 500 DEG C -650 DEG C, the mol ratio of pressure 300Torr-760Torr, V/ III
For 500-3000, the thickness of cushion is 15nm-30nm.
Step 303：Nucleating layer is grown on the buffer layer.
Specifically, nucleating layer includes multiple AlxGa1-xN layers, 0 ＜ x ＜ 1, multiple AlxGa1-xThe Al constituent contents of N layers are outside
The direction of growth for prolonging piece is successively reduced.The growth temperature of nucleating layer is 1000 DEG C -1100 DEG C, pressure 400Torr-600Torr,
The mol ratios of V/ III are 300-1000, and the thickness of nucleating layer is 200nm-500nm.
Step 304：Grow layer of undoped gan, N-type layer, active layer, P-type layer and p-type contact successively on nucleating layer
Layer.
Specifically, the growth temperature of layer of undoped gan is 1000 DEG C -1200 DEG C, pressure 30Torr-500Torr, V/ III
Mol ratio is 300-3000, and the thickness of layer of undoped gan is 2nm-20nm.The growth temperature of N-type layer is 1000 DEG C -1200 DEG C,
Pressure is 50Torr-760Torr, and the mol ratios of V/ III are 300-3000, and the thickness of N-type layer is 3um-4um.The growth temperature of active layer
Spend for 720 DEG C -820 DEG C, the mol ratio of pressure 200Torr-400Torr, V/ III is 300-5000, and the thickness of active layer is
430um-480um.The growth temperature of P-type layer is 850 DEG C -1050 DEG C, and the mol ratio of pressure 100Torr-760Torr, V/ III is
1000-20000, the thickness of P-type layer is 5nm-50nm.The growth temperature of p-type contact layer is 1000 DEG C -1200 DEG C, and pressure is
The mol ratio of 50Torr-500Torr, V/ III is 300-3000, and the thickness of p-type contact layer is 0.8um-2um.
It should be noted that after the growth of p-type contact layer is completed, the temperature of reaction chamber is first down to 650 DEG C -850 DEG C,
Made annealing treatment -15 minutes 5 minutes in pure nitrogen gas atmosphere, then the temperature of reaction chamber is down to room temperature, terminate the growth of epitaxial wafer.
Finally the epitaxial wafer to growth cleaned, deposited, the semiconducter process such as photoetching and etching, single size, which is made, is
10*16mil LED chip.
The present embodiment is used as gallium source, high-purity N H using trimethyl gallium or triethyl-gallium3As nitrogen source, trimethyl indium is as indium
Source, for trimethyl aluminium as silicon source, n-type doping selects silane, and two luxuriant magnesium are selected in p-type doping.
The embodiment of the present invention includes more by adding nucleating layer, nucleating layer between Sapphire Substrate and layer of undoped gan
Individual AlxGa1-xN layers, 0 ＜ x ＜ 1, because sapphire key component is Al2O3, AlxGa1-xN and Al2O3, lattice between GaN
Matching degree is preferable, therefore nucleating layer can avoid lattice between layer of undoped gan and substrate from mismatching.It is and multiple
AlxGa1-xThe direction of growth of the Al constituent contents of N layers along epitaxial wafer successively reduce, that is to say, that close to Sapphire Substrate into
The Al constituent contents of stratum nucleare are higher, and the Al constituent contents close to the nucleating layer of layer of undoped gan are relatively low, further increase and do not mix
Lattice match between miscellaneous GaN layer and substrate, the influence of the crystal mass to building crystalline substance after growth layer of undoped gan is reduced,
The angularity of the epitaxial layer finally to grow out is improved, for photoelectric properties than more uniform, crystal mass is preferable in epitaxial wafer.
The embodiments of the present invention are for illustration only, do not represent the quality of embodiment.
The foregoing is only presently preferred embodiments of the present invention, be not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent substitution and improvements made etc., it should be included in the scope of the protection.
Claims (8)
1. a kind of LED epitaxial slice, the epitaxial wafer includes Sapphire Substrate and is sequentially laminated on the sapphire
Cushion, layer of undoped gan on substrate, N-type layer, active layer, P-type layer, it is characterised in that the epitaxial wafer also includes nucleation
Layer, for the nucleating layer between the cushion and the layer of undoped gan, the nucleating layer includes multiple AlxGa1-xN
Layer, 0 ＜ x ＜ 1, the multiple AlxGa1-xThe direction of growth of the Al constituent contents of N layers along the epitaxial wafer is successively reduced, described
The thickness of nucleating layer is 200nm-500nm；The layer of undoped gan is multicycle structure, each cycle include AlGaN layer and
GaN layer.
2. epitaxial wafer according to claim 1, it is characterised in that the nucleating layer is multicycle structure, each cycle bag
Include AlxGa1-xN layers and GaN layer.
3. epitaxial wafer according to claim 2, it is characterised in that the periodicity of the multicycle structure of the nucleating layer is at least
For 3.
4. according to the epitaxial wafer described in claim any one of 1-3, it is characterised in that the undoped buffer layer has Al.
5. according to the epitaxial wafer described in claim any one of 1-3, it is characterised in that the active layer is multicycle structure, often
The individual cycle includes InGaN layer and GaN layer, or each cycle includes InGaN layer and AlGaN layer.
6. according to the epitaxial wafer described in claim any one of 1-3, it is characterised in that the P-type layer includes multiple p-types
AlInGaN layers, and in each p-type AlInGaN layers Mg doping concentration it is different, or the P-type layer is multicycle structure, and each
Cycle includes p-type AlInGaN layers and p-type GaN layer.
7. according to the epitaxial wafer described in claim any one of 1-3, it is characterised in that the epitaxial wafer also includes p-type contact layer,
The p-type contact layer includes GaN layer, and the p-type contact layer is layered in the P-type layer.
A kind of 8. method for manufacturing the LED epitaxial slice as described in claim any one of 1-7, it is characterised in that described
Method includes：On a sapphire substrate successively grown buffer layer, nucleating layer, layer of undoped gan, N-type layer, active layer, P-type layer,
And p-type contact layer.
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Families Citing this family (8)
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| CN105870278B (en) * | 2016-04-25 | 2018-08-21 | 华灿光电(苏州）有限公司 | A kind of gallium nitride based light emitting diode and preparation method thereof |
| CN106129201B (en) * | 2016-07-29 | 2019-08-23 | 华灿光电（浙江）有限公司 | A kind of epitaxial wafer of light emitting diode and preparation method thereof |
| CN106848017B (en) * | 2016-12-15 | 2019-08-23 | 华灿光电（浙江）有限公司 | A kind of epitaxial wafer and its growing method of GaN base light emitting |
| CN106711299B (en) * | 2016-12-19 | 2019-08-02 | 华灿光电（浙江）有限公司 | A kind of epitaxial wafer of light emitting diode and preparation method thereof |
| CN107316928B (en) * | 2017-07-20 | 2019-06-25 | 厦门三安光电有限公司 | Nitride semiconductor device and preparation method thereof |
| CN108321266A (en) * | 2018-02-01 | 2018-07-24 | 映瑞光电科技(上海)有限公司 | A kind of GaN base LED epitaxial structure and preparation method thereof |
| CN109346583B (en) * | 2018-08-31 | 2021-04-27 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
| CN113380930B (en) * | 2021-06-11 | 2022-08-19 | 厦门士兰明镓化合物半导体有限公司 | Deep ultraviolet light emitting diode and manufacturing method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103296161A (en) * | 2012-03-01 | 2013-09-11 | 上海蓝光科技有限公司 | GaN-based LED superlattice buffer layer structure and preparation method thereof |
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| JP2001230447A (en) * | 2000-02-16 | 2001-08-24 | Toyoda Gosei Co Ltd | Manufacture method for iii nitride-based compound semiconductor element |
| KR20130129683A (en) * | 2012-05-21 | 2013-11-29 | 포항공과대학교 산학협력단 | Semiconductor light emitting device having graded superlattice electron blocking layer |
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