CN102969419A - GaN (gallium nitride) based LED (light-emitting diode) epitaxial wafer on weak polarity surface as well as preparation method thereof - Google Patents
GaN (gallium nitride) based LED (light-emitting diode) epitaxial wafer on weak polarity surface as well as preparation method thereof Download PDFInfo
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Abstract
The invention discloses a GaN (gallium nitride) based LED (light-emitting diode) epitaxial wafer on a weak polarity surface as well as a preparation method thereof, and relates to an LED. The GaN based LED epitaxial wafer on the weak polarity surface is provided with a sapphire substrate, a non-doped GaN buffer layer, a first N-type GaN layer, a medium layer, a second N-type GaN layer, InGaN/GaN multi-quantum well layers with 3-10 cycles, a P-type AlGaN layer and a P-type GaN layer; the non-doped GaN layer, the first N-type GaN layer, the medium layer, a second N-type GaN layer, the InGaN/GaN multi-quantum well layers with 3-10 cycles, the P-type AlGaN layer and the P-type GaN layer are arranged on the sapphire substrate from bottom to top; and the medium layer is a SiO2 layer or a SiN layer. The GaN based LED epitaxial wafer on the weak polarity surface has good crystal quality, can improve the internal quantum efficiency of the LED, and a nonplanar active layer structure on the weak polarity surface is realized.
Description
Technical field
The present invention relates to a kind of light-emitting diode (LED), especially relate to the growth technology of a kind of application gallium nitride (GaN) base and compound film thereof---laterally overgrown technology (LEO) obtains the method for gallium nitride based LED epitaxial slice at the low pole face.
Background technology
Semiconductor LED will become the common recognition that normal lighting light source of future generation has become countries in the world government, scientific and technological circle and industrial circle, be 21 century a new generation's " green illumination " light source after incandescent lamp, fluorescent lamp.It has energy-conserving and environment-protective, the life-span is long, volume is little and the advantage such as rich color, and its realization as the normal lighting light source will produce great society and economic benefit.
At present, the luminous efficiency of commercial white light LEDs is about 110lm/w in the world, but realize large-scale solid state lighting, it is too low and improve the problems such as device lifetime and performance also need to solve the too high and photoelectric conversion efficiency of price, and towards efficient high and high-power future development.The luminous efficiency of GaN base LED is to be determined by internal quantum efficiency and light extraction efficiency, for improving light extraction efficiency.In recent years, the research of external quantum efficiency all is devoted in a lot of researchs, and major technique has graphical sapphire underlay growth method, change chip cross section technology, laser lift-off technique, makes photonic crystal etc. at ito transparent electrode, has all obtained good effect.And for the variety of issue of LED internal quantum efficiency, international research is relatively less.At present, the internal quantum efficiency of GaN base LED is relatively low, and wherein the reason of most critical is that the GaN sill is grown on Sapphire Substrate (0001) face.In growth course, owing to there is extremely strong polarized electric field in lattice mismatch, the existence of polarization field is so that can be with run-off the straight in the active layer, electron-hole wave functions is spatially separated, reduce its radiation recombination efficiency, thereby reduce the internal quantum efficiency of LED, and emission wavelength is unstable, i.e. so-called quantum limit Stark effect (QCSE).In addition, polarization field also is considered to the arch-criminal of LED light efficiency Droop effect, is obstacle ([1] S.P.Chang, T.C.Lu that restriction realizes high-power and efficient LED, L.F.Zhuo, C.Y.Jang, D.W.Lin, H.C.Yang, H.C.Kuo, S.C.Wang.Low Droop Nonpolar GaN/InGaN Light Emitting Diode Grown on m-Plane GaN Substrate.[J] .J.Electrochem.Soc., 2010,157:H501.).In order to reduce polarized electric field, the people such as U.S. J.Xu and M.F.Schubert report and utilize the AlInGaN quaternary alloy and the InGaN that regulate Lattice Matching to weaken Droop effect ([2] J.Xu as building under layer raising that realizes the LED luminous efficiency and the large injection condition, M.F.Schubert, A.N.Noemaun, D.Zhu, J.K.Kim, E.F.Schubert, M.H.Kim, H.J.Chung, S.Yoon, C.Sone, Y.Park.Reduction in efficiency droop in polarization matched GaInN/GaInN LEDs.[J] .Appl. Phys.Lett., 2009,94,011113.).The people such as domestic C.H.Wang adopt increases trap layer thickness among the InGaN/GaN MQW gradually, be that GQWs (Graded-thickness quantum wells) structure reduces the polarization field in the active layer and improves efficient ([3] C.H.Wang of LED, S.P.Chang, W.T.Chang, J.C.Li, Y.S.Lu, Z.Y.Li, H.C.Yang, H.C.Kuo, T.C.Lu, and S.C.Wang.Efficiency droop alleviation in InGaNGaN light-emitting diodes by graded-thickness multiple quantum wells.[J] .Appl.Phys.Lett., 2010,97,181101.).These work all are to reduce polarization field by the band structure of modulating quantum well, improve the luminous efficiency of quantum well LED, and its adjustable degree is all less.1998, as the father's of GaN base LED blue light S.Nakamura research group reported employing laterally overgrown technology (Lateral Epitaxial overgrowth, LEO) technology obtained low-dislocation-density high-crystal quality the GaN sill and realized that successfully GaN based blue laser device minimum threshold electric current reaches 1.2kAcm
-2And ([4] S.Nakamura after the realization commercialization, M.Senoh, S.Nagahama, N.Iwasa, T.Yamada, T.Matsushita, H.Kiyoku, Y.Sugimoto, T.Kozaki, H.Umemoto, M.Sano, K.Chocho.InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate.[J] .Appl.Phys.Lett., 1998,72:211-214.), the LEO technology is owing to the interest that can effectively reduce dislocation density in the epitaxial loayer and caused Many researchers.Because the epitaxial lateral overgrowth technology can not only reduce the material dislocation density, and the active layer of growth luminescent device can significantly reduce polarized electric field on the non-polar plane, and its research group in 2009 has also reported and adopted nonpolar at GaN
Face (m-plane) is perhaps at the semi-polarity face
(a-plane) GaN of growing nonpolar face and making LED/LD device ([5] Y.D.Lin, A.Chakraborty, S.Brinkley, H.C.Kuo, T.Melo, K.Fujito, J.S.Speck, S.P.DenBaars, and S.Nakamura.Characterization of blue-green m-plane InGaN light emitting diodes.[J] .Appl.Phys.Lett., 2009,94:261108.).However, the GaN material of growing nonpolar on the non-polar plane, its preparation condition is had relatively high expectations, and technique has to be optimized.Although the LEO technology also is not very desirable, in the current situation that the GaN substrate not yet arranged, be very useful.
Deielectric-coating (the SiO that the LEO specification requirement is at first insulated at the GaN film deposition one deck of having grown good
2Perhaps SiN) as mask layer, then etch parallel or perpendicular to substrate at deielectric-coating
The strip rectangle window region of face will be put into reative cell with the substrate of mask layer more at last and carry out secondary epitaxy.The concrete growth course of LEO is: GaN is at first in window region nucleation and upwards growth, and epitaxy layer thickness that it is generally acknowledged window region begins lateral growth when surpassing mask regions thickness, until the GaN of adjacent two window region lateral growths merges into smooth film.Since the barrier effect of deielectric-coating and turning to of screw dislocation, the reasons such as growth scope of freedom increase, and the dislocation density of the film that secondary epitaxy obtains will reduce about 4 orders of magnitude than the dislocation density of an extension under the mask layer.
In sum, in conjunction with the growth characteristic of GaN sill and the vast application market prospect of LED, we need to reduce the polarization field in the LED active layer and improve internal quantum efficiency.
Summary of the invention
The objective of the invention is in order to overcome in traditional LED device architecture because there is extremely strong polarization field in active layer, so that quantum well can be with run-off the straight, electron-hole wave functions is spatially separated, its radiation recombination efficiency is descended, thereby reduce the problem of the internal quantum efficiency of LED, provide a kind of crystal mass better, can improve the internal quantum efficiency of LED, gallium nitride based LED epitaxial slice and preparation method thereof on a kind of low pole face of the nonplanar active layer structure of low pole face realization.
The present invention adopts low pressure metal organic chemical vapor deposition system (LP-MOCVD) equipment, utilizes high-purity H
2, N
2As carrier gas, carry out the preparation of LED epitaxial wafer.
Gallium nitride based LED epitaxial slice is provided with Sapphire Substrate, unadulterated GaN resilient coating, 1N type GaN layer, dielectric layer, 2N type GaN layer, the InGaN/GaN multiple quantum well layer in 3～10 cycles, P type AlGaN layer and P type GaN layer on a kind of low pole face of the present invention; Described unadulterated GaN layer, 1N type GaN layer, dielectric layer, 2N type GaN layer, the InGaN/GaN Multiple Quantum Well in 3～10 cycles, P type AlGaN layer and P type GaN layer are located on the Sapphire Substrate from bottom to up successively; Described dielectric layer is SiO
2Layer or SiN layer.
The preparation method of gallium nitride based LED epitaxial slice on a kind of low pole face of the present invention, concrete steps are as follows:
1) Sapphire Substrate of (0001) face is packed into reative cell is at H
2Again cooling after heating is heat-treated substrate under the atmosphere, the growing GaN resilient coating;
2) growth regulation 1N type GaN layer on the GaN resilient coating takes out sample after the cooling;
3) deposit SiO at 1N type GaN layer
2Layer or SiN layer are as dielectric layer, respectively along 1N type GaN's
Or
Direction carves window as graph substrate, obtains the sample with graph substrate;
4) put into low pressure metal organic chemical vapor deposition system after sample cleans and carry out the secondary epitaxy growth: at first at H
2Lower growth regulation 2N type GaN layer is then at N
2Growing InGaN under the atmosphere/GaN multiple quantum well active layer;
5) at H
2Magnesium P type AlGaN layer and mix magnesium P type GaN layer is mixed in lower growth, obtain epitaxial wafer after, with epitaxial wafer at N
2Anneal under the gas, get gallium nitride based LED epitaxial slice on the low pole face.
In step 1), described at H
2The temperature that heats under the atmosphere is more than 1050 ℃, and the described heat treated time can be 10～20min, and the temperature of described cooling can be 500～600 ℃, and the growth thickness of described GaN resilient coating can be 10～40nm.
In step 2) in, described on the GaN resilient coating temperature of growth regulation 1N type GaN layer can be 950～1100 ℃, the thickness of described 1N type GaN layer can be 0.5～2 μ m.
In step 3), describedly deposit SiO at 1N type GaN layer
2The temperature of layer or SiN layer can be under 200～300 ℃, and the method for described deposition can adopt the PE-CVD sedimentation, described SiO
2The thickness of layer or SiN layer can be 100～200nm, the described technique that carves window can adopt traditional etching technics, and the shape of described window can be marking shape window, hexagonal window openings, diamond-shaped windows or circular window etc., the cycle of described marking shape window can be 8～20 μ m; The external diameter of a circle of described hexagonal window openings can be 5～10 μ m, and the cycle can be 10～20 μ m; The cycle of described diamond-shaped windows can be 10～20 μ m; The diameter of described circular window can be 5～10 μ m, and the cycle can be 10～20 μ m.
In step 4), described at H
2The temperature of lower growth regulation 2N type GaN layer can be 950～1100 ℃, and the thickness of described 2N type GaN layer can be 0.5～4 μ m, and is described at N
2The temperature of growing InGaN under the atmosphere/GaN multiple quantum well active layer can be 700～900 ℃, and described InGaN/GaN multiple quantum well active layer can be grown 3～10 cycles.
In step 5), described at H
2Lower growth is mixed magnesium P type AlGaN layer and be can be 900～1100 ℃ with the temperature of mixing magnesium P type GaN layer, and the described thickness of mixing magnesium P type AlGaN layer can be 10～50nm, and the temperature of described annealing can be 700～850 ℃, and the time of described annealing can be 10～20min.
The present invention used Ga, In, Mg, N, Si source in the epitaxial wafer preparation process is respectively high-purity trimethyl gallium (TMGa), trimethyl indium (TMIn), trimethyl aluminium (TMAl), two luxuriant magnesium (Cp
2Mg), NH
3And silane (SiH
4).
Technical scheme of the present invention is to utilize side direction and the controlled characteristics of longitudinal growth speed in the GaN sill epitaxial lateral overgrowth outgrowth technology, obtain having the GaN epitaxial loayer of low pole face, then at low pole face growth LED device architecture, realize nonplanar active layer structure, thereby increase the efficient lighting area of active layer and reduce polarization field intensity, improve internal quantum efficiency.Because side direction and longitudinally growth rate than controlling by the growth conditions of reative cell, by controlling growth conditions: speed was less than longitudinal growth speed when the parameters such as growth temperature, growth pressure and V/ III began lateral growth, when adjacent two window region epitaxial lateral overgrowths part when mask layer combines, can form nonplanar, the cross section is triangle or trapezoidal, GaN epitaxial loayer with low pole face is epitaxial growth Multiple Quantum Well LED device architecture on triangle or the trapezoidal epitaxial loayer having the cross section then.Final its cross section all can form little triangle or trapezium structure side by side on the direction of growth, have nonplanar LED active layer structure thereby form, and is different from traditional planar structure.By changing growth conditions, make lateral growth speed greater than longitudinal growth speed at last, finally obtain the epitaxial wafer of surfacing.
The present invention starts with from the Fundamentals that determine GaN base LED chip luminous efficiency, utilize GaN material laterally overgrown technology to obtain first to have the GaN epitaxial loayer of low pole face, then at low pole face growth LED device architecture, obtain having the active layer of nonplanar structure, thereby reduce the active layer polarization field, improve the luminous efficiency of LED.
Compare with existing LED device architecture, advantage of the present invention is:
1, utilize controlled non-planar LED device architecture, increase the light-emitting area of active layer, under identical Injection Current condition, its luminous efficiency is higher.
2, LED device active layer material is grown directly upon on the GaN of mask regions low dislocation, is conducive to obtain high-quality active layer material, thereby can greatly improve its luminous efficiency.
3, LED device active layer is grown on the low pole face, can effectively reduce the polarized electric field in the quantum well, thereby improves the electron-hole wave functions recombination probability, improves internal quantum efficiency.
Description of drawings
Fig. 1 is LED epitaxial wafer (the active layer cross section the is triangle) schematic diagram of the embodiment of the invention 1.
Fig. 2 is LED epitaxial wafer (the active layer cross section the is trapezoidal) schematic diagram of the embodiment of the invention 2.
In Fig. 1 and 2, respectively be labeled as: 1. Sapphire Substrate, 2. 1N type GaN layer, 3. dielectric layer, 4. 2N type GaN layer, the InGaN/GaN multiple quantum well layer in 5.3～10 cycles, 6.P type AlGaN layer and P type GaN layer.
Embodiment
In order to further specify content of the present invention, below in conjunction with drawings and Examples the present invention is done detailed description.
Referring to Fig. 1, gallium nitride based LED epitaxial slice embodiment is provided with Sapphire Substrate 1, unadulterated GaN resilient coating (not drawing), 1N type GaN layer 2, dielectric layer 3, the InGaN/GaN multiple quantum well layer 5 in 4,3～10 cycle of 2N type GaN layer, P type AlGaN layer and P type GaN layer 6 on the low pole face of the present invention in Fig. 1, and unadulterated GaN layer, 1N type GaN layer 2, dielectric layer 3, the InGaN/GaN multiple quantum well layer 5 in 4,3～10 cycle of 2N type GaN layer, P type AlGaN layer and P type GaN layer 6 are located on the Sapphire Substrate 1 successively from bottom to up; Dielectric layer is SiO
2Layer or SiN layer.
Below provide the concrete preparation method of gallium nitride based LED epitaxial slice on the low pole face of the present invention.
1) Sapphire Substrate 1 of (0001) face is packed into reative cell is heat-treated 10min to substrate being heated to more than 1050 ℃ under the H2 atmosphere; Then cooling is at the GaN of 530 ℃ of growth thickness 40nm resilient coating;
2) under 1030 ℃, at the thick 1N type GaN layer 2 of GaN resilient coating growth 2 μ m, sample is taken out in cooling;
3) under 200 ℃, with the PE-CVD sedimentation at the thick SiN dielectric layer 3 of sample deposition 100nm, along 1N type GaN layer 2
Direction carves the wide marking shape window of 3 μ m as graph substrate with traditional etching technics, obtains the sample with graph substrate, and the cycle of marking shape window width and mask layer width is 10 μ m;
4) carry out the secondary epitaxy growth putting into again metal organic chemical vapor deposition (MOCVD) system after the sample cleaning of being carved with figure;
5) at first at the 2N type GaN layer 4 of 1050 ℃ of lower growth one deck 0.5～4 μ m, the control growth conditions is so that the 2N type GaN layer 4 of two adjacent window regions heals at mask layer, and it is triangle that formation has the cross section, is indicated as nonplanar epitaxial slice structure;
6) then have the cross section be the InGaN/GaN Multiple Quantum Well in leg-of-mutton 4 cooling 3 cycle of growth of nonplanar 2N type GaN layer as the required multiple quantum well layer 5 of LED structural material, and to make final surface still have the cross section be leg-of-mutton structure;
7) at last the thick P type AlGaN layer of 1050 ℃ of growth skim 10～50nm and one deck thicker mix magnesium P type GaN layer 6, change growth conditions, increase the lateral growth speed of P type GaN layer, so that lateral growth speed greater than longitudinal growth speed, finally obtains the epitaxial wafer of flat surface.
1) Sapphire Substrate 1 of (0001) face is packed into reative cell is at H
2Be heated to more than 1050 ℃ under the atmosphere substrate is heat-treated 20min; Then cooling is at the GaN of 600 ℃ of growth thickness 40nm resilient coating;
2) under 1050 ℃, at GaN resilient coating growth 3 μ m 1N type GaN layers 2, sample is taken out in cooling;
3) under 300 ℃, deposit the thick SiO of 200nm with the PE-CVD sedimentation at sample
2Dielectric layer 3, along 1N type GaN layer 2
Direction with traditional etching technics carve circumscribed circle diameter be the hexagonal window openings of 10 μ m as graph substrate, obtain the sample with graph substrate.The cycle of hexagonal window openings circumscribed circle diameter width and mask layer width is 20 μ m;
4) carry out the secondary epitaxy growth putting into again metal organic chemical vapor deposition (MOCVD) system after the sample cleaning of being carved with figure;
5) at first at the 2N type GaN layer 4 of 1030 ℃ of lower growth one deck 0.5～4 μ m, the control growth conditions is so that the 2N type GaN layer 4 of two adjacent window regions heals at mask layer, and it is trapezoidal that formation has the cross section, is indicated as nonplanar epitaxial slice structure;
6) then have the cross section be the InGaN/GaN Multiple Quantum Well in trapezoidal 4 cooling 5 cycle of growth of nonplanar 2N type GaN layer as the required multiple quantum well layer 5 of LED structural material, and to make final surface still have the cross section be trapezoidal structure;
7) at last the thick P type AlGaN layer of 950 ℃ of growth skim 10～50nm and one deck thicker mix magnesium P type GaN layer 6, change growth conditions, increase the lateral growth speed of P type GaN layer, so that lateral growth speed greater than longitudinal growth speed, finally obtains the epitaxial wafer of flat surface.
In sum, the invention provides a kind of laterally overgrown technology of utilizing and obtain light-emitting diode of nonplanar active layer structure and preparation method thereof in the growth of low pole face.In the device preparation process, by the active layer structure at low pole face growth light-emitting diode, thus the polarized electric field of reduction active layer, the efficient lighting area of increase active layer improves its luminous efficiency.
Claims (10)
1. gallium nitride based LED epitaxial slice on the low pole face is characterized in that being provided with Sapphire Substrate, unadulterated GaN resilient coating, 1N type GaN layer, dielectric layer, 2N type GaN layer, the InGaN/GaN multiple quantum well layer in 3～10 cycles, P type AlGaN layer and P type GaN layer; Described unadulterated GaN layer, 1N type GaN layer, dielectric layer, 2N type GaN layer, the InGaN/GaN Multiple Quantum Well in 3～10 cycles, P type AlGaN layer and P type GaN layer are located on the Sapphire Substrate from bottom to up successively.
2. gallium nitride based LED epitaxial slice on a kind of low pole face as claimed in claim 1 is characterized in that described dielectric layer is SiO
2Layer or SiN layer.
3. the preparation method of gallium nitride based LED epitaxial slice on a kind of low pole face as claimed in claim 1 is characterized in that its concrete steps are as follows:
1) Sapphire Substrate of (0001) face is packed into reative cell, again cooling after heating is heat-treated substrate under the H2 atmosphere, growing GaN resilient coating;
2) growth regulation 1N type GaN layer on the GaN resilient coating takes out sample after the cooling;
3) deposit SiO at 1N type GaN layer
2Layer or SiN layer are as dielectric layer, respectively along 1N type GaN's
Or
Direction carves window as graph substrate, obtains the sample with graph substrate;
4) put into low pressure metal organic chemical vapor deposition system after sample cleans and carry out the secondary epitaxy growth: at first at H
2Lower growth regulation 2N type GaN layer is then at N
2Growing InGaN under the atmosphere/GaN multiple quantum well active layer;
5) at H
2Magnesium P type AlGaN layer and mix magnesium P type GaN layer is mixed in lower growth, obtain epitaxial wafer after, with epitaxial wafer at N
2Anneal under the gas, get gallium nitride based LED epitaxial slice on the low pole face.
4. the preparation method of gallium nitride based LED epitaxial slice on a kind of low pole face as claimed in claim 3 is characterized in that in step 1), and is described at H
2The temperature that heats under the atmosphere is more than 1050 ℃, and the described heat treated time can be 10～20min, and the temperature of described cooling can be 500～600 ℃, and the growth thickness of described GaN resilient coating can be 10～40nm.
5. the preparation method of gallium nitride based LED epitaxial slice on a kind of low pole face as claimed in claim 3, it is characterized in that in step 2) in, described on the GaN resilient coating temperature of growth regulation 1N type GaN layer can be 950～1100 ℃, the thickness of described 1N type GaN layer can be 0.5～2 μ m.
6. the preparation method of gallium nitride based LED epitaxial slice on a kind of low pole face as claimed in claim 3 is characterized in that in step 3), describedly deposits SiO at 1N type GaN layer
2The temperature of layer or SiN layer is under 200～300 ℃, and the method for described deposition can adopt the PE-CVD sedimentation, described SiO
2The thickness of layer or SiN layer can be 100～200nm.
7. the preparation method of gallium nitride based LED epitaxial slice on a kind of low pole face as claimed in claim 3, it is characterized in that in step 3), described window be shaped as marking shape window, hexagonal window openings, diamond-shaped windows or circular window, the cycle of described marking shape window is 8～20 μ m; The external diameter of a circle of described hexagonal window openings is 5～10 μ m, and the cycle is 10～20 μ m; The cycle of described diamond-shaped windows is 10～20 μ m; The diameter of described circular window is 5～10 μ m, and the cycle is 10～20 μ m.
8. the preparation method of gallium nitride based LED epitaxial slice on a kind of low pole face as claimed in claim 3 is characterized in that in step 4), and is described at H
2The temperature of lower growth regulation 2N type GaN layer can be 950～1100 ℃, and the thickness of described 2N type GaN layer can be 0.5～4 μ m.
9. the preparation method of gallium nitride based LED epitaxial slice on a kind of low pole face as claimed in claim 3 is characterized in that in step 4), and is described at N
2The temperature of growing InGaN under the atmosphere/GaN multiple quantum well active layer is 700～900 ℃, and described InGaN/GaN multiple quantum well active layer can be grown 3～10 cycles.
10. the preparation method of gallium nitride based LED epitaxial slice on a kind of low pole face as claimed in claim 3 is characterized in that in step 5), and the described temperature that growth is mixed magnesium P type AlGaN layer and mixed magnesium P type GaN layer under H2 is 900～1100 ℃; The described thickness of mixing magnesium P type AlGaN layer can be 10～50nm; The temperature of described annealing can be 700～850 ℃, and the time of described annealing can be 10～20min.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050056850A1 (en) * | 2003-09-17 | 2005-03-17 | Toyoda Gosei Co., Ltd. | GaN based semiconductor light emitting device and method of making the same |
| CN101183697A (en) * | 2007-12-10 | 2008-05-21 | 厦门大学 | Gallium nitride based LED epitaxial slice structure and method for preparing the same |
| US20090146162A1 (en) * | 2004-05-10 | 2009-06-11 | The Regents Of The University Of California | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
-
2012
- 2012-12-24 CN CN2012105686494A patent/CN102969419A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050056850A1 (en) * | 2003-09-17 | 2005-03-17 | Toyoda Gosei Co., Ltd. | GaN based semiconductor light emitting device and method of making the same |
| US20090146162A1 (en) * | 2004-05-10 | 2009-06-11 | The Regents Of The University Of California | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
| CN101183697A (en) * | 2007-12-10 | 2008-05-21 | 厦门大学 | Gallium nitride based LED epitaxial slice structure and method for preparing the same |
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