CN106684213A - Gan-based semiconductor device and manufacturing method thereof - Google Patents
Gan-based semiconductor device and manufacturing method thereof Download PDFInfo
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- CN106684213A CN106684213A CN201510752667.1A CN201510752667A CN106684213A CN 106684213 A CN106684213 A CN 106684213A CN 201510752667 A CN201510752667 A CN 201510752667A CN 106684213 A CN106684213 A CN 106684213A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 27
- 239000010703 silicon Substances 0.000 claims abstract description 27
- 239000010410 layer Substances 0.000 claims description 222
- 229910052739 hydrogen Inorganic materials 0.000 claims description 30
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 25
- 239000012298 atmosphere Substances 0.000 claims description 25
- 239000001257 hydrogen Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 23
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 20
- 229910052749 magnesium Inorganic materials 0.000 claims description 20
- 239000011777 magnesium Substances 0.000 claims description 20
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 20
- 230000004888 barrier function Effects 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- 208000012868 Overgrowth Diseases 0.000 claims description 10
- 229910004205 SiNX Inorganic materials 0.000 claims description 10
- 238000001020 plasma etching Methods 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- 238000001039 wet etching Methods 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 239000003989 dielectric material Substances 0.000 claims description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000001465 metallisation Methods 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- 230000006911 nucleation Effects 0.000 claims 1
- 238000010899 nucleation Methods 0.000 claims 1
- 230000032696 parturition Effects 0.000 claims 1
- 230000008878 coupling Effects 0.000 abstract description 9
- 238000010168 coupling process Methods 0.000 abstract description 9
- 238000005859 coupling reaction Methods 0.000 abstract description 9
- 230000003287 optical effect Effects 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 3
- 230000001276 controlling effect Effects 0.000 abstract description 2
- 230000001105 regulatory effect Effects 0.000 abstract description 2
- 229910002601 GaN Inorganic materials 0.000 description 93
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 241001062009 Indigofera Species 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0045—Devices characterised by their operation the devices being superluminescent diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
Abstract
The invention discloses a GaN-based semiconductor device and a manufacturing method thereof. The GaN-based semiconductor device comprises a silicon substrate and an epitaxial layer formed on the silicon substrate, and is characterized in that the epitaxial layer comprises an AlN nucleating layer, an AlGaN buffer layer and a GaN buffer layer which are sequentially formed on the silicon substrate. According to the invention, a dielectric film is adopted to act as a mask layer, different effects are achieved through regulating and controlling the periodicity of a dielectric layer, and the dielectric layer can act as a limiting layer when the periodicity reaches the maximum, so that the optical loss can be effectively reduced, and threshold current of a laser and a super-radiation light-emitting diode is reduced; and the electric layer acts as an interface layer when the periodicity is small and forms another optical waveguide structure together with AlGaN at the bottom, a planar coupling optical waveguide laser and a super-radiation light-emitting diode are formed, and a nearly-circular light spot with a good shape can be acquired.
Description
Technical field
The invention belongs to field of semiconductor photoelectron technique, more particularly to a kind of laser instrument, super-radiance light emitting diode etc.
GaN base semiconductor device and preparation method thereof.
Background technology
The group III-nitride of wurtzite structure is important compound semiconductor materials, is had in photoelectron and microelectronic
Great application prospect, is paid much attention in recent years by researcher, develops extremely rapid.Due to gallium nitride material system tool
There is wider energy band, by modulating compound component, the wavelength of GaN base luminescent device can be covered from infrared straight to visible ray
It is the optimum selection for realizing blue, violet laser and super-radiance light emitting diode at present to ultraviolet very wide scope.
The indigo plant of gallium nitride substrate, violet laser existing procucts in the world, but the substrate of costliness seriously constrains production cost；
And have 30 degree of face within angle between Sapphire Substrate and GaN epitaxial layer, it is impossible to surface is stably obtained by cleavage smooth
Cavity surface, easily cause Cavity surface loss, affect the lasing threshold of laser instrument and super-radiance light emitting diode；In addition current GaN
The longitudinal direction of base laser and super-radiance light emitting diode is limited much stronger than laterally limiting, and emergent light spot is substantially ellipse, nothing
Method realizes efficient coupling, limits its application.It is therefore desirable to research and development are based on other substrates and the Low threshold using other technologies
Or GaN base laser, the super-radiance light emitting diode of subcircular hot spot.
By contrast, it is all that silicon substrate has low cost, monocrystalline size big and quality is high, thermal conductivity is high, electric conductivity is good etc.
Many features, using silicon substrate the extension cost of laser instrument, super-radiance light emitting diode not only can be greatly reduced, and is helped
In device radiating operationally.Compared to Sapphire Substrate, silicon substrate is parallel with GaN epitaxial layer, can pass through solution
Reason obtains the smooth Cavity surface in surface.At present the microelectric technique of silicon is very ripe, will be expected to realize using silicon substrate
GaN base opto-electronic device is integrated with microelectronic.Exactly because the above-mentioned plurality of advantages of silicon substrate, silicon substrate is applied to life
Long GaN base LED, and have been carried out industrialization.But still there is very big challenge using silicon substrate, mainly
Because silicon and GaN have very big lattice mismatch, very big dislocation density is easily produced.
The content of the invention
It is an object of the invention to provide a kind of GaN base semiconductor device and preparation method thereof, with overcome it is of the prior art not
Foot.
For achieving the above object, the present invention provides following technical scheme：
The embodiment of the invention discloses a kind of GaN base semiconductor device, including silicon substrate and it is formed on the silicon substrate
Epitaxial layer, the epitaxial layer include being sequentially formed in AlN nucleating layers on the silicon substrate, AlGaN cushions and
Using the GaN cushions of laterally overgrown.
Preferably, in above-mentioned GaN base semiconductor device, the epitaxial layer has ridge structure, and the epitaxial layer also includes
N-shaped AlGaN limiting layers, lower waveguide layer, mqw active layer, the upper waveguide being grown on successively on the GaN cushions
Layer, p-AlGaN electronic barrier layers, p-AlGaN/GaN superlattices light limiting layers, p-GaN cap and p-InGaN connect
Contact layer.
Preferably, in above-mentioned GaN base semiconductor device, the material of the upper and lower ducting layer include GaN or
InGaN。
Preferably, in above-mentioned GaN base semiconductor device, the mqw active layer includes InGaN/InGaN quantum
Well structure or InGaN/GaN quantum well structures.
Preferably, in above-mentioned GaN base semiconductor device, SiO is adopted in the GaN cushions of the laterally overgrown2、
SiNx、Al2O3、HfO2、TiO2、ZrO2Any two kinds of limiting layers for constituting one or more cycles are covered as medium in material
Film layer, each layer of dielectric material thickness meets formula：D=λ/4n, wherein d are the thickness of single-layer medium material, and λ is transmitting
Wavelength, n is medium refraction index；Dielectric layer mask layer window width is 1～10 μm, and mask strip width is 1～100 μm.
Preferably, in above-mentioned GaN base semiconductor device, the ridge structure of the epitaxial layer is located at the institute of low-dislocation-density
Give an account of matter mask layer overlying regions.
Preferably, in above-mentioned GaN base semiconductor device, the thickness of the GaN cushions of the laterally overgrown is
1～10 μm.
Accordingly, the invention also discloses a kind of manufacture method of GaN base semiconductor device, including：On a silicon substrate successively
Growing AIN nucleating layer, AlGaN cushions, deposit one layer of GaN template layer on AlGaN cushions, then adopt
PECVD methods metallization medium layer on template layer, by chemical wet etching window region is gone out, then makes GaN by laterally overgrown
Merge, then grown successively by MOCVD：N-shaped AlGaN limiting layers, lower waveguide layer, mqw active layer, on
Ducting layer, p-AlGaN electronic barrier layers, p-AlGaN/GaN superlattices light limiting layers, p-GaN cap, p-InGaN
Contact layer；Then ridge structure, deposit metal electrodes are etched again.
Preferably, the manufacture method of above-mentioned GaN base semiconductor device specifically includes following steps：
A, in a hydrogen atmosphere, at 1000～1300 DEG C of temperature, is passed through TMGa, TMAl as group III source, NH3Make
Under conditions of for group V source, the AlN nucleating layers that a layer thickness is 20～500nm are grown successively, thickness is 200～2000nm
AlGaN cushions, on AlGaN cushions grow a layer thickness be 200～5000nm GaN template layer, adopt
PECVD methods deposit the medium mask layer in one or more cycles in the GaN layer, then go out window by chemical wet etching
Area, then by laterally overgrown merges GaN again, obtains the epitaxial lateral overgrowth GaN layer that a layer thickness is 1～10 μm；
B, in a hydrogen atmosphere, at 1100～1300 DEG C, is passed through TMGa, TMAl as group III source, NH3As
Group V source, SiH4As n-shaped doped source, the n-AlGaN limiting layers that a layer thickness is 1～5 μm are grown；
C, in a nitrogen atmosphere, at 900～1300 DEG C, is passed through TMIn, TMGa as group III source, NH3As V
Clan source, SiH4Under conditions of n-shaped doped source, one layer of 20～500nm thick n-GaN or n-In are grownx1Ga1-x1N
Lower waveguide layer, x1 is In components, and value is 0.01～0.1；
D, in a nitrogen atmosphere, at 700～1100 DEG C, is passed through TMIn, TMGa as group III source, NH3As V
The multicycle In of clan source, grown quantum trap width and In change of componentx2Ga1-x2N/Iny2Ga1-y2N or Inz2Ga1-z2N/GaN
Used as laser instrument and the mqw active layer of super-radiance light emitting diode, SQW periodicity is 1～20 to quantum well structure；Its
Middle Inx2Ga1-x2N shell thickness is 1～10nm, and x2 is 0.01～0.2；Iny2Ga1-y2N shell thickness is 1～30nm, and y2 is
0.01～0.2；Inz2Ga1-z2N shell thickness is 1～10nm, and z2 is 0.01～0.2, and GaN layer thickness is 1～20nm；
E, in a nitrogen atmosphere, at 900～1300 DEG C, is passed through TMIn, TMGa as group III source, NH3As V
Clan source, under conditions of two luxuriant magnesium are as p-type doped source, grows one layer of 20～200nm thick p-GaN or p-Inx3Ga1-x3N
Upper ducting layer, x3 is 0.01～0.2；
F, in a hydrogen atmosphere, at 1000～1300 DEG C, is passed through TMGa and TMAl as group III source, NH3Make
For group V source, under conditions of two luxuriant magnesium are as p-type doped source, the thick p-Al of one layer of 10～100nm are grownx4Ga1-x4N is electric
Sub- barrier layer, x4 is 0.01～0.3；
G, in a hydrogen atmosphere, at 1000～1200 DEG C, is passed through TMGa, TMAl as group III source, NH3As
Group V source, under conditions of two luxuriant magnesium are as p-type doped source, grows multicycle p-Alx5Ga1-x5N/GaN superlattices light is limited
Layer, thickness is 100～1000nm, and x5 is 0.01～0.2；
H, in a hydrogen atmosphere, at 1000～1200 DEG C, is passed through TMGa as group III source, NH3As group V source,
Under conditions of two luxuriant magnesium are as p-type doped source type doped source, the thick p-GaN cap and of one layer of 10～100nm is grown
Thickness degree is the thick heavy doping p-GaN cap of 1～20nm；
I, in a nitrogen atmosphere, at 800～1100 DEG C, is passed through TMIn, TMGa as group III source, NH3 conducts
Group V source, grows the p-InGaN contact layers that a layer thickness is 1～50nm；
J, photo etched mask is carried out in p-InGaN contacts layer surface, using reactive ion etching in respective regions cutting so as to deep
Degree reaches GaN layer, and on GaN layer surface, deposited metal makes N-shaped Ohmic electrode, using reactive ion etching in p-type InGaN
Layer surface performs etching p-AlxGa1-xN/GaN superlattices light limiting layers surface, in the low-dislocation-density region of epitaxial lateral overgrowth
Ridge structure is etched, in the both sides of ridged SiO is deposited2Insulating barrier, then depositing p-type Ohmic electrode in the above, completes
Element manufacturing.
Compared with prior art, advantages of the present invention includes：
(1) present invention reaches different effects using deielectric-coating as mask layer by regulating and controlling the periodicity of dielectric layer, when
Periodicity can effectively reduce light loss when larger as light limiting layer, reduce laser instrument and super-radiance light emitting diode
Threshold current；When periodicity is less as boundary layer, another optical waveguide structure is constituted with the AlGaN of bottom, formed
Flat plate coupling optical waveguide laser instrument, super-radiance light emitting diode, can obtain shape and preferably closely justify hot spot.
(2) the invention provides a kind of employing epitaxial lateral overgrowth method growth GaN base laser, super-radiance light emitting diode
Method, can effectively reduce the dislocation density in epitaxial layer, improve the crystal mass of epitaxial layer, improve laser instrument and super spoke
Penetrate the life-span of light emitting diode.
(3) present invention considerably reduces the extension cost of laser instrument and super-radiance light emitting diode using silicon as substrate,
And be conducive to device radiating operationally, it is expected to realize that GaN base opto-electronic device is integrated with microelectronic.
Description of the drawings
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing skill
The accompanying drawing to be used needed for art description is briefly described, it should be apparent that, drawings in the following description are only the present invention
Described in some embodiments, for those of ordinary skill in the art, on the premise of not paying creative work, also
Other accompanying drawings can be obtained according to these accompanying drawings.
Fig. 1 show the GaN base purple light super-radiance light emitting diode structural representation on the silicon substrate of the embodiment of the present invention 1；
Fig. 2 show the indigo plant laser structure schematic diagram of the GaN base on the silicon substrate of the embodiment of the present invention 2；
Fig. 3 show the employing laterally overgrown GaN cushion schematic diagrams of the embodiment of the present invention 2；
Fig. 4 show the excitation wavelength schematic diagram of the blue laser of the embodiment of the present invention 2；
Fig. 5 show the GaN base flat plate coupling optical waveguide laser structure on the silicon substrate of the embodiment of the present invention 3 and light field point
Cloth schematic diagram.
Specific embodiment
Some embodiments of the present invention provide a kind of method that employing epitaxial lateral overgrowth prepares GaN cushions, can effectively reduce
Dislocation density in epitaxial layer, lifts the crystal mass of epitaxial layer.This case creatively employs dielectric layer as epitaxial lateral overgrowth
Mask, by adjust dielectric layer periodicity reach different effects, both can effectively reduce light loss as light limiting layer
Consumption, reduces the threshold current of laser instrument and super-radiance light emitting diode, it is also possible to as boundary layer, the AlGaN groups with bottom
Into another optical waveguide structure, form flat plate coupling optical waveguide laser instrument, super-radiance light emitting diode, can obtain shape compared with
Good nearly circle hot spot.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is described in detail,
Obviously, described embodiment is only a part of embodiment of the invention, rather than the embodiment of whole.Based in the present invention
Embodiment, the every other enforcement that those of ordinary skill in the art are obtained on the premise of creative work is not made
Example, belongs to the scope of protection of the invention.
Embodiment 1 refers to Fig. 1, and the embodiment 1 provides a kind of super spoke of GaN base purple light being grown on silicon substrate 101
Light emitting diode is penetrated, launch wavelength is 405nm, using the vertical reative cell MOCVD lifes of the close coupling of Aixtron companies
Long system carries out Material growth.Its concrete preparation method is as follows：
A, in a hydrogen atmosphere, at 1290 DEG C of temperature, is passed through TMAl as group III source, NH3As group V source,
Growth a layer thickness is the AlN cushions 117 of 300nm；TMGa is passed through again, and it is 300nm thick to grow a layer thickness
Al0.1Ga0.9N cushions 102；Regrowth a layer thickness is 3 μm of GaN template layer 103；Existed using PECVD methods
The SiO in 7 cycles is deposited in the GaN layer2/SiNxCompound medium layer 104, lower floor is SiO2, thickness is 75nm, upper strata
For SiNx, thickness is 53nm, then goes out window region by chemical wet etching, and dielectric layer mask window width is 4 μm, mask strip
Width is 10 μm, then adopts laterally overgrown a layer thickness for 4 μm of low dislocation density GaN layer 105；
B, in a hydrogen atmosphere, at 1290 DEG C, is passed through TMGa, TMAl as group III source, NH3As V races
Source, SiH4As n-shaped doped source, the N-shaped Al that a layer thickness is 1.2 μm is grown0.05Ga0.95N shell 106；
C, in a nitrogen atmosphere, at 1290 DEG C, is passed through TMGa as group III source, NH3As group V source, SiH4
Under conditions of n-shaped doped source, the thick n-GaN lower waveguide layers 107 of one layer of 80nm are grown；
D, in a nitrogen atmosphere, at 935 DEG C, is passed through TMIn, TMGa as group III source, NH3As V races
The In in 3 cycles of source, grown quantum trap width and In change of component0.1Ga0.9N/In0.02Ga0.98N quantum well structures 108
As the mqw active layer of laser instrument；In0.1Ga0.9N shell thickness is 2.5nm, In0.02Ga0.98N shell thickness is 15nm；
E, in a nitrogen atmosphere, at 970 DEG C, is passed through TMGa as group III source, NH3Used as group V source, two is luxuriant
Under conditions of magnesium is as p-type doped source, ducting layer 109 on the thick p-GaN of one layer of 60nm is grown；
F, in a hydrogen atmosphere, at 1180 DEG C, is passed through TMGa and TMAl as group III source, NH3As V
Clan source, under conditions of two luxuriant magnesium are as p-type doped source, grows the thick p-Al of one layer of 25nm0.2Ga0.8N electron barrier layer
110；
G, in a hydrogen atmosphere, at 1170 DEG C, is passed through TMGa, TMAl as group III source, NH3As V
Clan source, under conditions of two luxuriant magnesium are as p-type doped source, grows multicycle p-Al0.1Ga0.9N/GaN superlattices light limiting layers
111, thickness is 500nm；
H, in a hydrogen atmosphere, at 1170 DEG C, is passed through TMGa as group III source, NH3Used as group V source, two is luxuriant
Under conditions of magnesium is as p-type doped source type doped source, grows the thick p-GaN cap of one layer of 20nm and one layer of 5nm is thick
Heavy doping p-GaN cap 112；
I, in a nitrogen atmosphere, at 850 DEG C, is passed through TMIn, TMGa as group III source, NH3As group V source,
Growth a layer thickness is the p-In of 3nm0.05Ga0.95N contact layers 113.
J, photo etched mask is carried out on p-type InGaN layer surface, using reactive ion etching in respective regions cutting so as to deep
Degree reaches n-type GaN layer, in n-type GaN layer surface depositing n-type Ohmic electrode 114.Using reactive ion etching in p
Type InGaN layer surface performs etching p-Al0.1Ga0.9N/GaN light limiting layers surface, in the low-dislocation-density area of epitaxial lateral overgrowth
Domain etches ridge.SiO is deposited in the both sides of ridged2Insulating barrier 115, then depositing p-type Ohmic electrode 116 in the above.
Embodiment 2 refers to Fig. 2, and the embodiment 2 provides a kind of growth GaN base blue laser on a silicon substrate 201
Device, using laterally overgrown GaN cushions, wherein the SiO in 3 cycles of growth2/SiNxMask layer as reflection layer,
Its launch wavelength is 440nm, and using the vertical reative cell MOCVD growing systems of the close coupling of Aixtron companies material is carried out
Material growth.Its concrete preparation method is as follows：
A, in a hydrogen atmosphere, at 1290 DEG C of temperature, is passed through TMAl as group III source, NH3As group V source,
Growth a layer thickness is the AlN cushions 217 of 300nm；TMGa is passed through again, and it is 300nm thick to grow a layer thickness
Al0.1Ga0.9N cushions 202；With reference to shown in Fig. 3, regrowth a layer thickness is 3 μm of GaN template layer 203；Using
PECVD methods deposit the SiO in 7 cycles in the GaN layer2/SiNxCompound medium layer 204, lower floor is SiO2, thickness
For 75nm, upper strata is SiNx, thickness is 53nm, then goes out window region by chemical wet etching, and dielectric layer mask window width is
4 μm, mask strip width is 10 μm, then adopts laterally overgrown a layer thickness for 4 μm of low dislocation density GaN layer
205；
B, in a hydrogen atmosphere, at 1290 DEG C, is passed through TMGa, TMAl as group III source, NH3As V races
Source, SiH4As n-shaped doped source, the N-shaped Al that a layer thickness is 1.3 μm is grown0.05Ga0.95N shell 206；
C, in a nitrogen atmosphere, at 965 DEG C, is passed through TMIn, TMGa as group III source, NH3As V races
Source, SiH4Under conditions of n-shaped doped source, the thick n-In of one layer of 90nm are grown0.02Ga0.98N lower waveguide layers 207；
D, in a nitrogen atmosphere, at 935 DEG C, is passed through TMIn, TMGa as group III source, NH3As V races
3 cycle In of source, grown quantum trap width and In change of component0.1Ga0.9N/GaN quantum well structures 208 are used as laser
The mqw active layer of device, In0.1Ga0.9N shell thickness is 2.5nm, and GaN layer thickness is 15nm；
E, in a nitrogen atmosphere, at 970 DEG C, is passed through TMGa as group III source, NH3Used as group V source, two is luxuriant
Under conditions of magnesium is as p-type doped source, the thick p-In of one layer of 60nm are grown0.02Ga0.98The upper ducting layers 209 of N；
F, in a hydrogen atmosphere, at 1180 DEG C, is passed through TMGa and TMAl as group III source, NH3As V
Clan source, under conditions of two luxuriant magnesium are as p-type doped source, grows the thick p-Al of one layer of 25nm0.2Ga0.8N electron barrier layer
210；
G, in a hydrogen atmosphere, at 1170 DEG C, is passed through TMGa, TMAl as group III source, NH3As V
Clan source, under conditions of two luxuriant magnesium are as p-type doped source, grows multicycle p-Al0.1Ga0.9N/GaN superlattices light limiting layers
211, thickness is 500nm；
H, in a hydrogen atmosphere, at 1170 DEG C, is passed through TMGa as group III source, NH3Used as group V source, two is luxuriant
Under conditions of magnesium is as p-type doped source type doped source, grows the thick p-GaN cap of one layer of 20nm and one layer of 5nm is thick
Heavy doping p-GaN cap 212；
I, in a nitrogen atmosphere, at 850 DEG C, is passed through TMIn, TMGa as group III source, NH3As group V source,
Growth a layer thickness is the p-In of 3nm0.05Ga0.95N contact layers 213.
J, photo etched mask is carried out on p-type InGaN layer surface, using reactive ion etching in respective regions cutting so as to deep
Degree reaches n-type GaN layer, in n-type GaN layer surface depositing n-type Ohmic electrode 214.Using reactive ion etching in p
Type InGaN layer surface performs etching p-Al0.1Ga0.9N/GaN light limiting layers surface, in the low-dislocation-density area of epitaxial lateral overgrowth
Domain etches ridge.SiO is deposited in the both sides of ridged2Insulating barrier 215, then depositing p-type Ohmic electrode 216 in the above.
Fig. 4 show the excitation wavelength schematic diagram of blue laser.
Embodiment 3 refers to Fig. 5, and the embodiment 3 provides a kind of GaN base blue laser being grown on silicon substrate 301
Device, using laterally overgrown GaN cushions, wherein one layer of SiO of growth2/SiNxMedium mask layer is as boundary layer, shape
Into flat plate coupling optical waveguide laser instrument, launch wavelength is 440nm.Using the vertical reative cell of the close coupling of Aixtron companies
MOCVD growing systems carry out Material growth.Its concrete preparation method is as follows：
A, in a hydrogen atmosphere, at 1290 DEG C of temperature, is passed through TMAl as group III source, NH3As group V source,
Growth a layer thickness is the AlN cushions 302 of 300nm；TMGa is passed through again, and it is 300nm thick to grow a layer thickness
Al0.1Ga0.9N cushions 303；Regrowth a layer thickness is 3 μm of GaN template layer 304；Existed using PECVD methods
SiO is deposited in the GaN layer2/SiNxCompound medium layer 305, lower floor is SiO2, thickness is 75nm, and upper strata is SiNx, it is thick
Spend for 53nm.Window region is gone out by chemical wet etching, dielectric layer mask window width is 4 μm, and mask strip width is 10 μm,
Then laterally overgrown a layer thickness is adopted for 4 μm of low dislocation density GaN layer 306；
B, in a hydrogen atmosphere, at 1290 DEG C, is passed through TMGa, TMAl as group III source, NH3As V races
Source, SiH4As n-shaped doped source, the N-shaped Al that a layer thickness is 1.3 μm is grown0.05Ga0.95N shell 307；
C, in a nitrogen atmosphere, at 965 DEG C, is passed through TMIn, TMGa as group III source, NH3As V races
Source, SiH4Under conditions of n-shaped doped source, the thick n-In of one layer of 90nm are grown0.02Ga0.98N lower waveguide layers 308；
D, in a nitrogen atmosphere, at 935 DEG C, is passed through TMIn, TMGa as group III source, NH3As V races
3 cycle In of source, grown quantum trap width and In change of component0.1Ga0.9N/GaN quantum well structures 309 are used as laser
The mqw active layer of device, In0.1Ga0.9N shell thickness is 2.5nm, and GaN layer thickness is 15nm；
E, in a nitrogen atmosphere, at 970 DEG C, is passed through TMGa as group III source, NH3Used as group V source, two is luxuriant
Under conditions of magnesium is as p-type doped source, the thick p-In of one layer of 60nm are grown0.02Ga0.98The upper ducting layers 310 of N；
F, in a hydrogen atmosphere, at 1180 DEG C, is passed through TMGa and TMAl as group III source, NH3As V
Clan source, under conditions of two luxuriant magnesium are as p-type doped source, grows the thick p-Al of one layer of 25nm0.2Ga0.8N electron barrier layer
311；
G, in a hydrogen atmosphere, at 1170 DEG C, is passed through TMGa, TMAl as group III source, NH3As V
Clan source, under conditions of two luxuriant magnesium are as p-type doped source, grows multicycle p-Al0.1Ga0.9N/GaN superlattices light limiting layers
312, thickness is 500nm；
H, in a hydrogen atmosphere, at 1170 DEG C, is passed through TMGa as group III source, NH3Used as group V source, two is luxuriant
Under conditions of magnesium is as p-type doped source type doped source, grows the thick p-GaN cap of one layer of 20nm and one layer of 5nm is thick
Heavy doping p-GaN cap 313；
I, in a nitrogen atmosphere, at 850 DEG C, is passed through TMIn, TMGa as group III source, NH3As group V source,
Growth a layer thickness is the p-In of 3nm0.05Ga0.95N contact layers 314.
J, photo etched mask is carried out on p-type InGaN layer surface, using reactive ion etching in respective regions cutting so as to deep
Degree reaches n-type GaN layer, in n-type GaN layer surface depositing n-type Ohmic electrode 315.Using reactive ion etching in p
Type InGaN layer surface performs etching p-Al0.1Ga0.9N/GaN light limiting layers surface, in the low-dislocation-density area of epitaxial lateral overgrowth
Domain etches ridge.SiO is deposited in the both sides of ridged2Insulating barrier 316, then depositing p-type Ohmic electrode 317 in the above.
It should be noted that herein, such as first and second or the like relational terms be used merely to an entity or
Person operates and is made a distinction with another entity or operation, and not necessarily requires or imply that presence is appointed between these entities or operation
What this actual relation or order.And, term " including ", "comprising" or its any other variant are intended to non-
Exclusiveness is included, so that a series of process, method, article or equipment including key elements not only includes those key elements,
But also including other key elements being not expressly set out, or also include for this process, method, article or equipment institute
Intrinsic key element.In the absence of more restrictions, the key element for being limited by sentence "including a ...", it is not excluded that
Also there is other identical element in process, method, article or equipment including the key element.
The above is only the specific embodiment of the present invention, it is noted that for those skilled in the art come
Say, under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should be regarded
For protection scope of the present invention.
Claims (8)
1. a kind of GaN base semiconductor device, it is characterised in that including silicon substrate and the extension being formed on the silicon substrate
Layer, the epitaxial layer has ridge structure, and the epitaxial layer including the AlN nucleation being sequentially formed on the silicon substrate
The GaN cushions that layer, AlGaN cushions and laterally overgrown are formed.
2. GaN base semiconductor device according to claim 1, it is characterised in that：The epitaxial layer includes giving birth to successively
Be longer than N-shaped AlGaN limiting layers on the GaN cushions, lower waveguide layer, mqw active layer, upper ducting layer,
P-AlGaN electronic barrier layers, p-AlGaN/GaN light limiting layers, p-GaN cap and p-InGaN contact layers.
3. GaN base semiconductor device according to claim 2, it is characterised in that：The material of the upper and lower ducting layer
Material is included for GaN or InGaN；And/or, the mqw active layer include InGaN/InGaN quantum well structures or
InGaN/GaN quantum well structures.
4. GaN base semiconductor device according to claim 1, it is characterised in that：The GaN of the laterally overgrown
SiO is adopted in cushion2、SiNx、Al2O3、HfO2、TiO2、ZrO2Any two kinds constitute one or more weeks in material
The limiting layer of phase as medium mask layer, wherein, x values 0～2, each layer of dielectric material thickness meets formula：D=λ/4n,
Wherein d is the thickness of single-layer medium material, and λ is launch wavelength, and n is medium refraction index；Dielectric layer mask layer window width
For 1～10 μm, mask strip width is 1～100 μm.
5. GaN base semiconductor device according to claim 4, it is characterised in that：The ridge structure of the epitaxial layer
Positioned at the medium mask layer overlying regions of low-dislocation-density.
6. GaN base semiconductor device according to claim 1, it is characterised in that：The GaN of the laterally overgrown
The thickness of cushion is 1～10 μm.
7. a kind of manufacture method of GaN base semiconductor device, it is characterised in that include：Growing AIN successively on a silicon substrate
Nucleating layer, AlGaN cushions, deposit one layer of GaN template layer, then using PECVD side on AlGaN cushions
Method metallization medium layer on template layer, by chemical wet etching window region is gone out, then merges GaN by laterally overgrown, so
Grown successively by MOCVD afterwards：N-shaped AlGaN limiting layers, lower waveguide layer, mqw active layer, upper ducting layer,
P-AlGaN electronic barrier layers, p-AlGaN/GaN superlattices light limiting layers, p-GaN cap, p-InGaN contact layers；
Then ridge structure, deposit metal electrodes are etched again.
8. the manufacture method of GaN base semiconductor device according to claim 7, it is characterised in that specifically include as follows
Step：
A, in hydrogen atmosphere, at 1000～1300 DEG C of temperature, be passed through TMGa, TMAl as group III source, NH3Make
Under conditions of for group V source, the AlN nucleating layers that a layer thickness is 20～500nm are grown successively, thickness is 200～2000nm
AlGaN cushions, on AlGaN cushions grow a layer thickness be 200～5000nm GaN template layer, adopt
PECVD methods deposit the medium mask layer in one or more cycles in the GaN layer, then go out window by chemical wet etching
Area, then by laterally overgrown merges GaN again, obtains the epitaxial lateral overgrowth GaN layer that a layer thickness is 1～10 μm；
B, in a hydrogen atmosphere, at 1100～1300 DEG C, is passed through TMGa, TMAl as group III source, NH3As
Group V source, SiH4As n-shaped doped source, the n-AlGaN limiting layers that a layer thickness is 1～5 μm are grown；
C, in a nitrogen atmosphere, at 900～1300 DEG C, is passed through TMIn, TMGa as group III source, NH3As V
Clan source, SiH4Under conditions of n-shaped doped source, one layer of 20～500nm thick n-GaN or n-In are grownx1Ga1-x1N
Lower waveguide layer, x1 is In components, and value is 0.01～0.1；
D, in a nitrogen atmosphere, at 700～1100 DEG C, is passed through TMIn, TMGa as group III source, NH3As V
The multicycle In of clan source, grown quantum trap width and In change of componentx2Ga1-x2N/Iny2Ga1-y2N or Inz2Ga1-z2N/GaN
Used as laser instrument and the mqw active layer of super-radiance light emitting diode, SQW periodicity is 1～20 to quantum well structure；Its
Middle Inx2Ga1-x2N shell thickness is 1～10nm, and x2 is 0.01～0.2；Iny2Ga1-y2N shell thickness is 1～30nm, and y2 is
0.01～0.2；Inz2Ga1-z2N shell thickness is 1～10nm, and z2 is 0.01～0.2, and GaN layer thickness is 1～20nm；
E, in a nitrogen atmosphere, at 900～1300 DEG C, is passed through TMIn, TMGa as group III source, NH3As V
Clan source, under conditions of two luxuriant magnesium are as p-type doped source, grows one layer of 20～200nm thick p-GaN or p-Inx3Ga1-x3N
Upper ducting layer, x3 is 0.01～0.2；
F, in a hydrogen atmosphere, at 1000～1300 DEG C, is passed through TMGa and TMAl as group III source, NH3Make
For group V source, under conditions of two luxuriant magnesium are as p-type doped source, the thick p-Al of one layer of 10～100nm are grownx4Ga1-x4N is electric
Sub- barrier layer, x4 is 0.01～0.3；
G, in a hydrogen atmosphere, at 1000～1200 DEG C, is passed through TMGa, TMAl as group III source, NH3As
Group V source, under conditions of two luxuriant magnesium are as p-type doped source, grows multicycle p-Alx5Ga1-x5N/GaN superlattices light is limited
Layer, thickness is 100～1000nm, and x5 is 0.01～0.2；
H, in a hydrogen atmosphere, at 1000～1200 DEG C, is passed through TMGa as group III source, NH3As group V source,
Under conditions of two luxuriant magnesium are as p-type doped source type doped source, the thick p-GaN cap and of one layer of 10～100nm is grown
Thickness degree is the thick heavy doping p-GaN cap of 1～20nm；
I, in a nitrogen atmosphere, at 800～1100 DEG C, is passed through TMIn, TMGa as group III source, NH3 conducts
Group V source, grows the p-InGaN contact layers that a layer thickness is 1～50nm；
J, photo etched mask is carried out in p-InGaN contacts layer surface, using reactive ion etching in respective regions cutting so as to deep
Degree reaches GaN layer, and on GaN layer surface, deposited metal makes N-shaped Ohmic electrode, using reactive ion etching in p-type InGaN
Layer surface performs etching p-AlxGa1-xN/GaN superlattices light limiting layers surface, in the low-dislocation-density region of epitaxial lateral overgrowth
Ridge structure is etched, in the both sides of ridged SiO is deposited2Insulating barrier, then depositing p-type Ohmic electrode in the above, completes
Element manufacturing.
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| CN107404067A (en) * | 2017-06-29 | 2017-11-28 | 南京邮电大学 | Silicon substrate GaN laser based on distributed bragg reflector mirror waveguide microcavity |
| CN107768976A (en) * | 2017-10-23 | 2018-03-06 | 南京邮电大学 | A kind of the silicon substrate GaN waveguide laser and preparation method of integrated resonance grating microcavity |
| CN107887255A (en) * | 2017-09-18 | 2018-04-06 | 中国电子科技集团公司第五十五研究所 | A kind of method of high resistant GaN film epitaxial growth |
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| CN107404067A (en) * | 2017-06-29 | 2017-11-28 | 南京邮电大学 | Silicon substrate GaN laser based on distributed bragg reflector mirror waveguide microcavity |
| CN107887255A (en) * | 2017-09-18 | 2018-04-06 | 中国电子科技集团公司第五十五研究所 | A kind of method of high resistant GaN film epitaxial growth |
| CN107887255B (en) * | 2017-09-18 | 2020-10-02 | 中国电子科技集团公司第五十五研究所 | High-resistance GaN film epitaxial growth method |
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| CN112151646B (en) * | 2019-06-28 | 2021-12-21 | 隆达电子股份有限公司 | Light emitting element |
| CN112240903A (en) * | 2019-07-19 | 2021-01-19 | 深圳大学 | Hydrogen sensor core and preparation method thereof |
| CN111162447A (en) * | 2019-12-31 | 2020-05-15 | 苏州辰睿光电有限公司 | Electrode window and manufacturing method of semiconductor device with electrode window |
| CN111370993A (en) * | 2020-04-15 | 2020-07-03 | 广东鸿芯科技有限公司 | Semiconductor laser device with constant temperature control function and manufacturing method thereof |
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