CN105406358B - A kind of GaN base laser preparation method and structure - Google Patents
A kind of GaN base laser preparation method and structure Download PDFInfo
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- CN105406358B CN105406358B CN201510828233.5A CN201510828233A CN105406358B CN 105406358 B CN105406358 B CN 105406358B CN 201510828233 A CN201510828233 A CN 201510828233A CN 105406358 B CN105406358 B CN 105406358B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
- H01S5/2209—GaInP based
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
Abstract
The present invention is suitable for semiconductor light electro-technical field, provides a kind of GaN base laser preparation method and structure, the preparation method include：The deposition medium film in surface p-GaN layer of the first epitaxial wafer；By photoetching or etching mode, double ridge window regions are formed on the deielectric-coating, double ridge window regions extend through the p-GaN layer；Epitaxial growth p-GaN in the p-GaN layer within the scope of double ridge window regions；In the high low-index material of the surfaces p-GaN alternating deposit of epitaxial growth, deielectric-coating upper limiting layer is formed.The deposited metal on deielectric-coating upper limiting layer constitutes p-electrode by the deposited metal.Laser of the present invention forms laser upper limiting layer using deielectric-coating, can be effectively increased the restriction factor of laser, reduces internal loss；This extrinsic current is injected by p-GaN, can effectively reduce laser resistance, reduces laser operating voltage, the performance of improving laser device.
Description
Technical field
The invention belongs to semiconductor light electro-technical field more particularly to a kind of GaN base laser preparation methods and structure.
Background technology
III-V nitride semiconductor is referred to as third generation semi-conducting material, has energy gap big, chemical stability
Well, the advantages that Flouride-resistani acid phesphatase is strong；Its energy gap covers entire visible-range, therefore can be used for making photogenerator
Part, such as light emitting diode, laser and superradiance pipe.Laser based on III-V nitride semiconductor and superradiance pipe
With making simple, small, light-weight, long lifespan, it is efficient the advantages that, it is aobvious in optic communication, optical pumping, optical storage and laser
Show that equal fields are widely applied.
The series resistance of usual GaN base laser is larger, and operating voltage is higher, is far above the built-in electricity of laser diode
Pressure, this is mainly due to have the p-AlGaN limiting layers after about 0.5um in laser.For GaN or AlGaN, frequently with CP2Mg
As dopant, however since ionization energy of the Mg acceptors in GaN is higher, up to 170meV, typically less than 1% Mg acceptor's electricity
From, generate hole, the hole concentration in p-type AlGaN or GaN is relatively low, and resistance is higher, to cause the series resistance of laser compared with
Greatly, the operating voltage of laser is higher, seriously affects the performance of laser.
In addition, relative to GaAs or InP-base laser, the absorption coefficient of GaN base laser is larger, about more than ten or tens
cm-1, cause the threshold current of laser higher, typically larger than 1kA/cm2, this mainly comes from the suction of the Mg acceptors in p-type layer
It receives, document report, the absorption coefficient in usual undoped GaN is about 1cm-1, the absorption coefficient in N-shaped GaN is about 5cm-1, and
For p-GaN, absorption coefficient is up to 100cm-1, this is mainly due to the hole concentrations to promote in p-GaN, in p-GaN
Mg mixes very high, up to 1019cm-3Magnitude, and Mg is deep acceptor can generate absorption to light, cause absorption loss in laser very
Greatly.
In addition, the multi-quantum well active region growth temperature of GaN base laser is usually relatively low, about 750 DEG C or so, this just determines
The growth temperature for having determined to be grown in the laser functional layer above multi-quantum well active region cannot be too high, while growth time is also not
Can be too long, the active area of laser otherwise can be caused to degenerate, to deteriorate the crystal quality of multi-quantum well active region；And laser
Upper limiting layer is usually AlGaN structures, to ensure higher crystal quality, reduces the C doping in AlGaN limiting layers, AlGaN's
Growth temperature cannot be too low, otherwise can lead to that the defect of AlGaN is more, difference in conductances, to influence the performance of laser, therefore need to be
Balance is found between multi-quantum well active region and upper limiting layer, the cap rock for such as growing AlGaN protects multiple quantum wells, prevents high temperature from moving back
Fire etc..
In view of the above, many patents, which are all put forth effort on, to be promoted the conductivity of P-type layer, improves p-type Ohmic contact or from chamber
The loss of laser is set about reducing in face, if patent 201410580361.8 proposes the growth atmosphere by changing p-GaN, effectively
The method for promoting p-GaN hole concentrations；Patent：200710009955.3 proposing a kind of reducing p-GaN ohmic contact resistances
Method；Patent 200810050920.9 proposes a kind of method that passivation laser cavity surface reduces laser losses；This patent with
Above-mentioned all patents are different, a kind of angle that this patent is designed from laser structure, it is proposed that GaN base laser preparation method.
Invention content
The embodiment of the present invention is designed to provide a kind of GaN base laser preparation method and structure, to solve existing skill
Art using AlGaN make upper limiting layer when, due to its requirement temperature caused by influence laser performance the problem of.
The embodiment of the present invention is achieved in that on the one hand an embodiment of the present invention provides a kind of preparations of GaN base laser
Method, the preparation method comprises the following steps：
The deposition medium film in surface p-GaN layer of the first epitaxial wafer；
By photoetching or etching mode, double ridge window regions are formed on the deielectric-coating, double ridge window regions run through
To the p-GaN layer；
Epitaxial growth p-GaN in the p-GaN layer within the scope of double ridge window regions；
In the high low-index material of the surfaces p-GaN alternating deposit of epitaxial growth, deielectric-coating upper limiting layer is formed；
The deposited metal on deielectric-coating upper limiting layer constitutes p-electrode by the deposited metal.
Preferably, between the p-GaN of the epitaxial growth backbone width constituted and backbone raceway groove width, by be made
The laser characteristic made is preset.
Preferably, the deposited metal on deielectric-coating upper limiting layer, specially：
The deposited metal on two backbones；Alternatively, around two backbones, the deposited metal on the deielectric-coating；Alternatively,
Cover the backbone mode deposited metal.
Preferably, first epitaxial wafer is implemented as：
Successively by substrate, p-GaN layer, lower limit layer, lower waveguide layer, multi-quantum well active region, upper ducting layer, electronic blocking
Layer and p-GaN layer are constituted.
Preferably, the deielectric-coating is by SiO2、TiO2、Al2O3、Ta2O5、Si3N4, one or more of TiN, AlN structure
At.
On the other hand, the embodiment of the present invention additionally provides a kind of the second epitaxial wafer of GaN base, which is characterized in that described second
Epitaxial wafer includes the first epitaxial wafer, deielectric-coating, p-GaN backbones and deielectric-coating upper limiting layer, specifically：
The deielectric-coating is located on the p-GaN layer of first epitaxial wafer, and has double ridge windows on the deielectric-coating；
The p-GaN backbones are located in double ridge windows, and in succession with the p-GaN layer of first epitaxial wafer phase；
The deielectric-coating upper limiting layer is located on the p-GaN backbones, wherein the deielectric-coating upper limiting layer is by different foldings
Penetrate rate material composition.
Preferably, which is characterized in that the first epitaxial wafer concrete structure includes：
Successively by substrate, n-GaN layers, lower limit layer, lower waveguide layer, multi-quantum well active region, upper ducting layer, electronic blocking
Layer and p-GaN layer are constituted.
The third aspect, the embodiment of the present invention additionally provide a kind of GaN base laser, and the laser includes the first extension
Piece, deielectric-coating, p-GaN backbones, deielectric-coating upper limiting layer, P electrode and N electrode, specifically：
The deielectric-coating is located on the p-GaN layer of first epitaxial wafer, and has double ridge windows on the deielectric-coating；
The p-GaN backbones are located in double ridge windows, and in succession with the p-GaN layer of first epitaxial wafer phase；
The deielectric-coating upper limiting layer is located on the p-GaN backbones, wherein the deielectric-coating upper limiting layer is by different foldings
Penetrate rate material composition；
The P electrode is located on the deielectric-coating, or on the deielectric-coating, and around the p-GaN backbones；
The N electrode is located on the substrate of first epitaxial wafer.
Preferably, the first epitaxial wafer concrete structure includes：
Successively by substrate, n-GaN layers, lower limit layer, lower waveguide layer, multi-quantum well active region, upper ducting layer, electronic blocking
Layer and p-GaN layer are constituted.
Preferably, it is the deielectric-coating by SiO2、TiO2、Al2O3、Ta2O5、Si3N4, it is a kind of or more in TiN, AlN
Kind is constituted.
A kind of advantageous effect of GaN base laser preparation method provided in an embodiment of the present invention includes：It is of the present invention
Laser forms laser upper limiting layer using deielectric-coating, can be effectively increased the restriction factor of laser, reduces internal loss；In addition
Electric current is injected by p-GaN, can effectively reduce laser resistance, reduces laser operating voltage, the performance of improving laser device.
Description of the drawings
It to describe the technical solutions in the embodiments of the present invention more clearly, below will be to embodiment or description of the prior art
Needed in attached drawing be briefly described, it should be apparent that, the accompanying drawings in the following description be only the present invention some
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 is a kind of flow diagram of GaN base laser preparation method provided in an embodiment of the present invention；
Fig. 2 is the first epitaxial slice structure schematic diagram provided in an embodiment of the present invention；
Fig. 3 is a kind of epitaxial wafer exposed by chemical wet etching after double ridge window regions provided in an embodiment of the present invention；
Fig. 4 is the first epitaxial slice structure schematic diagram provided in an embodiment of the present invention；
Fig. 5 is a kind of structural schematic diagram of GaN base laser provided in an embodiment of the present invention.
1 substrate in figure, 2 be n-GaN layers, and 3 be lower limit layer, and 4 be lower waveguide layer, and 5 be multi-quantum well active region, and 6 be upper
Ducting layer, 7 be electronic barrier layer, and 8 be p-GaN layer, and 9 be media coating, and 10 be the p-GaN layer of secondary epitaxy, and 11 be p-electrode,
12 be deielectric-coating upper limiting layer.
Specific implementation mode
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
In order to illustrate technical solutions according to the invention, illustrated below by specific embodiment.
Embodiment one
It is as shown in Figure 1 a kind of GaN base laser preparation method provided by the invention, the preparation method includes following step
Suddenly：
In step 201, the deposition medium film in surface p-GaN layer of the first epitaxial wafer；
In step 202, by photoetching or etching mode, double ridge window regions are formed on the deielectric-coating, it is described double
Ridge window region extends through the p-GaN layer；
In step 203, epitaxial growth p-GaN in the p-GaN layer within the scope of double ridge window regions；
In step 204, it in the high low-index material of the surfaces p-GaN alternating deposit of epitaxial growth, is formed on deielectric-coating
Limiting layer.
In step 205, the deposited metal on deielectric-coating upper limiting layer constitutes p-electrode by the deposited metal.
Laser of the present invention forms laser upper limiting layer using deielectric-coating, can be effectively increased the limitation of laser
The factor reduces internal loss；The both sides deposit metal electrodes of p-GaN form Ohmic contact, and electric current is injected from p-GaN, without logical
The higher p-AlGaN/GaN superlattices limiting layer of resistance is crossed, the series resistance of laser can be greatly reduced in this measure, reduce laser
Operating voltage, the performance of improving laser device.
In embodiments of the present invention, between the p-GaN of the epitaxial growth backbone width constituted and backbone raceway groove width
Degree, is preset by the laser characteristic to be manufactured.
Compare the prior art, and the preparation method of the embodiment of the present invention can control laser by controlling window sector width
Ridge width, rather than formed by dry etching, this measure can avoid the influence of etching injury, reduce the threshold value electricity of laser
Stream.
In conjunction with the embodiment of the present invention, there are several preferred implementations, wherein described to sink on deielectric-coating upper limiting layer
Product metal, specially：
The deposited metal on two backbones；Alternatively, around two backbones, the deposited metal on the deielectric-coating；Alternatively,
Cover the backbone mode deposited metal.Wherein, the covering includes surface and surrounding.
In embodiments of the present invention, first epitaxial wafer is implemented as：
Successively by substrate, n-GaN layers, lower limit layer, lower waveguide layer, multi-quantum well active region, upper ducting layer, electronic blocking
Layer and p-GaN layer are constituted.
In embodiments of the present invention, the deielectric-coating is by SiO2、TiO2、Al2O3、Ta2O5、Si3N4, one kind in TiN, AlN
Or a variety of compositions.
In embodiments of the present invention, in the deielectric-coating of the high low-refraction of the surfaces p-GaN alternating deposit of extension, deielectric-coating shape
At upper limiting layer；The light that usual deielectric-coating sends out Quantum Well is transparent, not will produce light absorption, therefore light suction can be greatly reduced
It receives；In addition relative to traditional AlGaN/GaN superlattices limiting layer structures, the depositing temperature of deielectric-coating is relatively low, about 300 DEG C, far
Less than the growth temperature of multi-quantum well active region, therefore high growth temperature Δ AlGaN/GaN superlattices limiting layers pair can be greatly reduced
Degeneration caused by multiple quantum wells, effectively promotes the quality of multiple quantum wells, the performance of improving laser device.
Embodiment two
A kind of GaN base laser preparation method described in corresponding embodiment one, the present invention also provides in its manufacturing process
Between product (the second epitaxial wafer) specific implementation mode.Next, a kind of the second epitaxial wafer of GaN base is specifically described, such as Fig. 4 institutes
Show, second epitaxial wafer includes the first epitaxial wafer 0, deielectric-coating 9, p-GaN backbones 10 and deielectric-coating upper limiting layer 12, specifically
's：
The deielectric-coating is located on the p-GaN layer 8 of first epitaxial wafer, and has double ridge windows on the deielectric-coating
(as shown in Figure 3)；
The p-GaN backbones 10 are located in double ridge windows, and in succession with 8 phase of p-GaN layer of first epitaxial wafer；
The deielectric-coating upper limiting layer 12 is located on the p-GaN backbones 10, wherein the deielectric-coating upper limiting layer is not by
It is constituted with refraction materials.
In embodiments of the present invention, first epitaxial wafer 0, as shown in Fig. 2, concrete structure includes：
Successively by substrate 1, n-GaN layers 2, lower limit layer 3, lower waveguide layer 4, multi-quantum well active region 5, upper ducting layer 6, electricity
Sub- barrier layer 7 and p-GaN layer 8 are constituted.
Embodiment three
A kind of GaN base laser preparation method described in corresponding embodiment one, the present invention also provides one kind of its manufacture
The structure of GaN base laser, as shown in figure 5, the laser includes the first epitaxial wafer 0, deielectric-coating 9, p-GaN backbones 10, is situated between
Plasma membrane upper limiting layer 12, P electrode 11 and N electrode (not shown), specifically：
The deielectric-coating 9 is located on the p-GaN layer 8 of first epitaxial wafer 0, and has double ridges on the deielectric-coating 9
Window；
The p-GaN backbones 10 are located in double ridge windows, and connect with the p-GaN layer 8 of first epitaxial wafer 0
Even；
The deielectric-coating upper limiting layer 12 is located on the p-GaN backbones 10, wherein the deielectric-coating upper limiting layer 12 by
Different refractivity material is constituted；
The P electrode 11 is located on the deielectric-coating 9, or positioned at (not shown) on the deielectric-coating 9, and in institute
It states around p-GaN backbones 10 (as shown in Figure 5)；
The N electrode is located at 1 on the substrate of first epitaxial wafer 0.
In embodiments of the present invention, first epitaxial wafer 0, as shown in Fig. 2, concrete structure includes：
Successively by substrate, n-GaN layers, lower limit layer, lower waveguide layer, multi-quantum well active region, upper ducting layer, electronic blocking
Layer and p-GaN layer are constituted.
In embodiments of the present invention, it is the deielectric-coating 9 by SiO2、TiO2、Al2O3、Ta2O5、Si3N4, in TiN, AlN
One or more kinds of constitute.
Example IV
The embodiment of the present invention combines the relevant parameter in specific Preparation equipment and preparation process, elaborates how to have
Body realizes a kind of preparation method of GaN base laser as described in embodiment one.Use Aixtron public in embodiments of the present invention
The equipment of metal organic chemical vapor deposition (MOCVD) of department carries out epitaxial growth, uses NH3, TMGa/TEGa, TMIn, TMAl etc.
Respectively as the source N, Ga, In, Al, SiH4And CP2Mg is as dopant, H2And N2Carrier gas as metal organic source.In this experiment
Substrate using the GaN substrate of self-supporting as growth laser, the preparation method comprises the following steps：
S1：The GaN substrate 1 of self-supporting is put into MOCVD, the n-GaN layers 2 of 1040 DEG C of growth 2um, the Si of n-GaN mixes
A concentration of 2 × 1018cm-3；
S2：The n-Al of 1040 DEG C of growth 750nm successively0.08Ga0.92N(Si：2×1018cm-3) 3,900 DEG C of lifes of lower limit layer
The n-In of long 120nm0.02Ga0.98N(Si：2×1017cm-3) lower waveguide layer 4；
S3：Grow 3 couples of non-In mixed0.16Ga0.84The thickness that N/GaN multiple quantum wells 5, wherein InGaN Quantum Well and GaN are built
Respectively 2.5nm and 14nm, growth temperature are respectively 750 DEG C and 840 DEG C；
S4：900 DEG C of non-In mixed of growth 80nm successively0.02Ga0.98The upper ducting layers 6 of N, the p-Al of 20nm0.2Ga0.8N electronics hinders
Barrier 7, wherein Mg mix a concentration of 5 × 1019cm-3；
S5：The p-GaN layer 8 of 20nm is grown, it is about 2 × 10 that Mg, which mixes concentration,19cm-3；
S6：Epitaxial wafer is taken out into MOCVD, is put into PECVD, the SiO after 350 DEG C of growth 40nm2Layer；
S7：Photoetching, in SiO2The window region of 3um is outputed on deielectric-coating 9 along the direction (1-100)；Wet method is carried out using BOE
Corrosion, removes the SiO of window region2, the p-GaN of window region is made to expose；
S8：Sample is put into the secondary epitaxy that p-GaN is carried out in MOCVD, growth temperature is 900 DEG C, and pressure is
800Torr, NH3Flow is 20000sccm, and the flow of TEGa is 500sccm, Cp2The flow of Mg is 250sccm, and growth time is
The thickness of 1500s, the p-GaN layer 10 of growth are about 200nm, and epitaxial lateral overgrowth has occurred in the p-GaN above window region, and p-GaN is thick
Degree is about 160nm, and width is about 6um；
S9：By the method for lithography stripping, in the surface of window region 350 DEG C of depositions, 4 couples of SiO2/ZrO2Speculum, wherein
Each pair of SiO2Thickness be 77nm, ZrO2Thickness be about 50nm；Laser epitaxial piece is subjected to 800 DEG C of 10 minutes nitrogen atmospheres
Lower annealing activates the Mg acceptors in p-GaN；
S10：By the method for lithography stripping, in the high low-index material of the surfaces p-GaN alternating deposit of secondary epitaxy, shape
At deielectric-coating upper limiting layer 12；
S11：By p-GaN upper surface of the method for lithography stripping between deielectric-coating and side deposit 50nm Ni and
The Au of 500nm, as the P electrode 11 of laser, 500 DEG C of annealing 180s, are connect with forming good p-type ohm in compressed air
It touches；
S12：Epitaxial wafer is thinned to 80um, and chemical polishing is carried out to the back side；
S13：In the backside deposition Ti/Al/Ti/Au of laser, the N electrode as laser；
S14：Laser device is formed by scribing, cleavage, plated film etc..
Embodiment five
For the effect of the verification present invention, the embodiment of the present invention also utilizes the laser of a traditional structure, with institute of the present invention
It states unlike laser, traditional structure laser upper limiting layer is the p-In of 500nm0.16Ga0.84N/GaN superlattice structures, are adopted
With identical ridge size (3um × 400um) and identical plating conditions, laser device is formed, we compared two kinds and swash
The output characteristics of light device.Conventional laser threshold current is 50mA, and laser threshold current of the present invention is only 30mA, drop
Low 40%；Conventional laser threshold voltage is 6V, and laser threshold voltage of the present invention only 4.5V reduces 25%；It is logical
It crosses Hakki-Paoli methods and measures two kinds of laser internal loss, respectively 20cm-1And 10cm-1, relative to conventional laser, originally
The internal loss for inventing the laser reduces 50%, therefore relative to conventional laser, the interior damage of laser of the present invention
Smaller is consumed, the operating voltage of laser is lower, the threshold current smaller of laser, and performance is more excellent.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement etc., should all be included in the protection scope of the present invention made by within refreshing and principle.
Claims (10)
1. a kind of GaN base laser preparation method, which is characterized in that the preparation method includes：
The deposition medium film in surface p-GaN layer of the first epitaxial wafer；
By photoetching or etching mode, double ridge window regions are formed on the deielectric-coating, double ridge window regions extend through institute
State p-GaN layer；
Epitaxial growth p-GaN in the p-GaN layer within the scope of double ridge window regions；
In the high low-index material of the surfaces p-GaN alternating deposit of epitaxial growth, deielectric-coating upper limiting layer is formed；
The deposited metal on deielectric-coating upper limiting layer constitutes p-electrode by the deposited metal.
2. preparation method according to claim 1, which is characterized in that the backbone that the p-GaN of the epitaxial growth is constituted
The width of raceway groove between width and backbone, is preset by the laser characteristic to be manufactured.
3. preparation method according to claim 1, which is characterized in that the deposited metal on deielectric-coating upper limiting layer,
Specially：
The deposited metal on two backbones；Alternatively, around two backbones, the deposited metal on the deielectric-coating；Alternatively, covering
The backbone mode deposited metal.
4. according to any preparation methods of claim 1-3, which is characterized in that first epitaxial wafer is implemented as：
Successively by substrate, n-GaN layers, lower limit layer, lower waveguide layer, multi-quantum well active region, upper ducting layer, electronic barrier layer and
P-GaN layer is constituted.
5. according to any preparation methods of claim 1-3, which is characterized in that the deielectric-coating is by SiO2、TiO2、Al2O3、
Ta2O5、Si3N4, one or more of TiN, AlN constitute.
6. a kind of the second epitaxial wafer of GaN base, which is characterized in that second epitaxial wafer includes the first epitaxial wafer, deielectric-coating, p-
GaN backbones and deielectric-coating upper limiting layer, specifically：
The deielectric-coating is located on the p-GaN layer of first epitaxial wafer, and has double ridge windows on the deielectric-coating；
The p-GaN backbones are located in double ridge windows, and in succession with the p-GaN layer of first epitaxial wafer phase；
The deielectric-coating upper limiting layer is located on the p-GaN backbones, wherein the deielectric-coating upper limiting layer is by different refractivity
Material is constituted.
7. the second epitaxial wafer according to claim 6, which is characterized in that the first epitaxial wafer concrete structure includes：
Successively by substrate, n-GaN layers, lower limit layer, lower waveguide layer, multi-quantum well active region, upper ducting layer, electronic barrier layer and
P-GaN layer is constituted.
8. a kind of GaN base laser, which is characterized in that the laser includes the first epitaxial wafer, deielectric-coating, p-GaN backbones, is situated between
Plasma membrane upper limiting layer, P electrode and N electrode, specifically：
The deielectric-coating is located on the p-GaN layer of first epitaxial wafer, and has double ridge windows on the deielectric-coating；
The p-GaN backbones are located in double ridge windows, and in succession with the p-GaN layer of first epitaxial wafer phase；
The deielectric-coating upper limiting layer is located on the p-GaN backbones, wherein the deielectric-coating upper limiting layer is by different refractivity
Material is constituted；
The P electrode is located on the deielectric-coating, or on the deielectric-coating, and around the p-GaN backbones；
The N electrode is located on the substrate of first epitaxial wafer.
9. laser according to claim 8, which is characterized in that the first epitaxial wafer concrete structure includes：
Successively by substrate, n-GaN layers, lower limit layer, lower waveguide layer, multi-quantum well active region, upper ducting layer, electronic barrier layer and
P-GaN layer is constituted.
10. laser according to claim 8 or claim 9, which is characterized in that be the deielectric-coating by SiO2、TiO2、Al2O3、
Ta2O5、Si3N4, one or more of TiN, AlN constitute.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510828233.5A CN105406358B (en) | 2015-11-25 | 2015-11-25 | A kind of GaN base laser preparation method and structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510828233.5A CN105406358B (en) | 2015-11-25 | 2015-11-25 | A kind of GaN base laser preparation method and structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105406358A CN105406358A (en) | 2016-03-16 |
| CN105406358B true CN105406358B (en) | 2018-11-02 |
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