CN105406358A - Preparation method and structure for GaN-based laser - Google Patents
Preparation method and structure for GaN-based laser Download PDFInfo
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- CN105406358A CN105406358A CN201510828233.5A CN201510828233A CN105406358A CN 105406358 A CN105406358 A CN 105406358A CN 201510828233 A CN201510828233 A CN 201510828233A CN 105406358 A CN105406358 A CN 105406358A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
- H01S5/2209—GaInP based
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- Semiconductor Lasers (AREA)
Abstract
The invention is applicable to the field of a semiconductor photoelectric technology, and provides a preparation method and a structure for a GaN-based laser. The preparation method comprises the steps of depositing a dielectric film on a p-GaN layer on the surface of a first epitaxial layer; forming a dual-ridge window region in the dielectric film through a photoetching manner or an etching manner, wherein the dual-ridge window region penetrates to the p-GaN layer; performing p-GaN epitaxial growth on the p-GaN layer within the scope of the dual-ridge window region; alternatively depositing materials with high refractive index and low refractive index on the epitaxial growth p-GaN surface to form an upper limiting layer of the dielectric film; and depositing metal on the upper limiting layer of the dielectric film, wherein a p electrode is formed by the deposited metal. The upper limiting layer of the laser is formed by the dielectric film, so that the limiting factors of the laser can be effectively increased, and the internal loss is lowered; and in addition, the current is injected through the p-GaN, so that the laser resistance can be effectively reduced, the working voltage of the laser can be lowered, and the performance of the laser can be improved.
Description
Technical field
The invention belongs to optical semiconductor electro-technical field, particularly relate to a kind of GaN base laser preparation method and structure.
Background technology
Iii-v nitride-based semiconductor is called as third generation semi-conducting material, has energy gap large, the advantages such as chemical stability is good, and Flouride-resistani acid phesphatase is strong; Its energy gap contains whole visible-range, therefore can be used for making light emitting semiconductor device, as light-emitting diode, laser and superradiance pipe etc.Having based on the laser of iii-v nitride-based semiconductor and superradiance pipe makes simple, and volume is little, lightweight, and the life-span is long, efficiency advantages of higher, is widely applied in fields such as optical communication, optical pumping, optical storage and laser displaies.
The series resistance of usual GaN base laser is comparatively large, and operating voltage is higher, and far above the built-in voltage of laser diode, this is mainly due to the p-AlGaN limiting layer after the 0.5um that has an appointment in laser.For GaN or AlGaN, often adopt CP
2mg is as dopant, but due to the ionization energy of Mg acceptor in GaN higher, up to 170meV, usually be less than the Mg acceptor ionization of 1%, produce hole, the hole concentration in p-type AlGaN or GaN is lower, resistance is higher, thus causing the series resistance of laser comparatively large, the operating voltage of laser is higher, has a strong impact on the performance of laser.
In addition, relative to GaAs or InP-base laser, the absorption coefficient of GaN base laser is comparatively large, is about tens or tens cm
-1, cause the threshold current of laser higher, be usually greater than 1kA/cm
2, this Mg acceptor mainly come from p-type layer absorbs, and bibliographical information, the absorption coefficient in usual undoped GaN is about 1cm
-1, the absorption coefficient in N-shaped GaN is about 5cm
-1, and for p-GaN, its absorption coefficient is up to 100cm
-1, this is mainly due to the hole concentration for promoting in p-GaN, and the Mg in p-GaN mixes very high, up to 1019cm
-3magnitude, and Mg is deep acceptor, can produce to absorb light, causes the absorption loss in laser very large.
In addition, the multi-quantum well active region growth temperature of GaN base laser is usually lower, be about about 750 DEG C, this growth temperature just determining the laser functional layer of growth above multi-quantum well active region can not be too high, growth time also can not be oversize simultaneously, otherwise the active area of laser can be caused to degenerate, thus worsen the crystal mass of multi-quantum well active region; And laser upper limiting layer is generally AlGaN structure; for ensureing higher crystal mass; reduce the C doping in AlGaN limiting layer; the growth temperature of AlGaN can not be too low; otherwise can cause that the defect of AlGaN is many, conductance is poor, thus affect the performance of laser, therefore need find balance between multi-quantum well active region and upper limiting layer; as grown the cap rock protection Multiple Quantum Well of AlGaN, prevent high annealing etc.
In view of the above, a lot of patent all put forth effort on promote P-type layer conductivity, improve P type ohmic contact or set about from face, chamber reducing the loss of laser, as patent 201410580361.8 proposes the growth atmosphere by changing p-GaN, effectively promote the method for p-GaN hole concentration; Patent: 200710009955.3 propose a kind of method reducing p-GaN ohmic contact resistance; Patent 200810050920.9 proposes a kind of method that passivation laser cavity surface reduces laser losses; This patent is different from above-mentioned all patents, the angle that this patent designs from laser structure, proposes a kind of GaN base laser preparation method.
Summary of the invention
The object of the embodiment of the present invention is to provide a kind of GaN base laser preparation method and structure, when making upper limiting layer with the employing AlGaN solving prior art, due to the problem affecting laser performance that its temperature required causes.
The embodiment of the present invention is achieved in that embodiments provide a kind of GaN base laser preparation method, described preparation method comprises the following steps on the one hand:
Deposition medium film in the surface p-GaN layer of the first epitaxial wafer;
By photoetching or etching mode, described deielectric-coating is formed two ridge window region, and described pair of ridge window region extends through described p-GaN layer;
Described p-GaN layer Epitaxial growth p-GaN within the scope of described pair of ridge window region;
At epitaxially grown p-GaN surface alternating deposit height low-index material, form deielectric-coating upper limiting layer.
Plated metal on deielectric-coating upper limiting layer, forms p-electrode by described plated metal.
Preferably, between the backbone width that described epitaxially grown p-GaN is formed and backbone, the width of raceway groove, preset by the laser characteristic that will manufacture.
Preferably, described on deielectric-coating upper limiting layer plated metal, be specially:
Plated metal on two backbones; Or, around two backbones, plated metal on described deielectric-coating; Or, cover described backbone mode plated metal.
Preferably, described first epitaxial wafer is implemented as:
Be made up of substrate, n-GaN layer, lower limit layer, lower waveguide layer, multi-quantum well active region, upper ducting layer, electronic barrier layer and p-GaN layer successively.
Preferably, described deielectric-coating is by SiO
2, TiO
2, Al
2o
3, Ta
2o
5, Si
3n
4, one or more in TiN, AlN form.
On the other hand, the embodiment of the present invention additionally provides a kind of novel GaN base second epitaxial wafer, and it is characterized in that, described second epitaxial wafer comprises the first epitaxial wafer, deielectric-coating, p-GaN backbone and deielectric-coating upper limiting layer, concrete:
Described deielectric-coating is positioned on the p-GaN layer of described first epitaxial wafer, and described deielectric-coating has two ridge window;
Described p-GaN backbone is arranged in described pair of ridge window, and with the p-GaN layer of described first epitaxial wafer mutually in succession;
Described deielectric-coating upper limiting layer is positioned on described p-GaN backbone, and wherein, described deielectric-coating upper limiting layer is made up of different refractivity material.
Preferably, it is characterized in that, described first epitaxial wafer concrete structure comprises:
Be made up of substrate, n-GaN layer, lower limit layer, lower waveguide layer, multi-quantum well active region, upper ducting layer, electronic barrier layer and p-GaN layer successively.
The third aspect, the embodiment of the present invention additionally provides a kind of novel GaN base laser, and described laser comprises the first epitaxial wafer, deielectric-coating, p-GaN backbone, deielectric-coating upper limiting layer, P electrode and N electrode, concrete:
Described deielectric-coating is positioned on the p-GaN layer of described first epitaxial wafer, and described deielectric-coating has two ridge window;
Described p-GaN backbone is arranged in described pair of ridge window, and with the p-GaN layer of described first epitaxial wafer mutually in succession;
Described deielectric-coating upper limiting layer is positioned on described p-GaN backbone, and wherein, described deielectric-coating upper limiting layer is made up of different refractivity material;
Described P electrode is positioned on described deielectric-coating, or is positioned on described deielectric-coating, and around described p-GaN backbone;
Described N electrode is positioned on the substrate of described first epitaxial wafer.
Preferably, described first epitaxial wafer concrete structure comprises:
Be made up of substrate, n-GaN layer, lower limit layer, lower waveguide layer, multi-quantum well active region, upper ducting layer, electronic barrier layer and p-GaN layer successively.
Preferably, be that described deielectric-coating is by SiO
2, TiO
2, Al
2o
3, Ta
2o
5, Si
3n
4, one or more in TiN, AlN form.
The beneficial effect of a kind of novel GaN base laser preparation method that the embodiment of the present invention provides comprises: laser of the present invention adopts deielectric-coating to form laser upper limiting layer, effectively can increase the restriction factor of laser, reduces internal loss; This extrinsic current is injected by p-GaN, can effectively reduce laser resistance, reduces laser operating voltage, the performance of improving laser device.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in the embodiment of the present invention, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the schematic flow sheet of a kind of GaN base laser preparation method that the embodiment of the present invention provides;
Fig. 2 is the first epitaxial slice structure schematic diagram that the embodiment of the present invention provides;
Fig. 3 is a kind of epitaxial wafer after chemical wet etching exposes two ridge window region that the embodiment of the present invention provides;
Fig. 4 is the first epitaxial slice structure schematic diagram that the embodiment of the present invention provides;
Fig. 5 is the structural representation of a kind of GaN base laser that the embodiment of the present invention provides.
1 substrate in figure, 2 is n-GaN layer, and 3 is lower limit layer, and 4 is lower waveguide layer, 5 is multi-quantum well active region, and 6 is upper ducting layer, and 7 is electronic barrier layer, and 8 is p-GaN layer, 9 is media coating, and 10 is the p-GaN layer of secondary epitaxy, and 11 is p-electrode, and 12 is deielectric-coating upper limiting layer.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
In order to technical solutions according to the invention are described, be described below by specific embodiment.
Embodiment one
Be illustrated in figure 1 a kind of GaN base laser preparation method provided by the invention, described preparation method comprises the following steps:
In step 201, deposition medium film in the surface p-GaN layer of the first epitaxial wafer;
In step 202., by photoetching or etching mode, described deielectric-coating is formed two ridge window region, and described pair of ridge window region extends through described p-GaN layer;
In step 203, the described p-GaN layer Epitaxial growth p-GaN within the scope of described pair of ridge window region;
In step 204, at epitaxially grown p-GaN surface alternating deposit height low-index material, deielectric-coating upper limiting layer is formed.
In step 205, plated metal on deielectric-coating upper limiting layer, forms p-electrode by described plated metal.
Laser of the present invention adopts deielectric-coating to form laser upper limiting layer, effectively can increase the restriction factor of laser, reduces internal loss; The both sides deposit metal electrodes of p-GaN, form ohmic contact, electric current injects from p-GaN, without the need to by the higher p-AlGaN/GaN superlattice limiting layer of resistance, this measure significantly can reduce the series resistance of laser, reduces the operating voltage of laser, the performance of improving laser device.
In embodiments of the present invention, between the backbone width that described epitaxially grown p-GaN is formed and backbone, the width of raceway groove, preset by the laser characteristic that will manufacture.
Compare prior art, the preparation method of the embodiment of the present invention controls the ridge width of laser by controlling window region width, but not is formed by dry etching, and this measure can avoid the impact of etching injury, reduces the threshold current of laser.
In conjunction with the embodiment of the present invention, there is several preferred implementation, wherein, described on deielectric-coating upper limiting layer plated metal, be specially:
Plated metal on two backbones; Or, around two backbones, plated metal on described deielectric-coating; Or, cover described backbone mode plated metal.Wherein, described covering comprises surface and surrounding.
In embodiments of the present invention, described first epitaxial wafer is implemented as:
Be made up of substrate, n-GaN layer, lower limit layer, lower waveguide layer, multi-quantum well active region, upper ducting layer, electronic barrier layer and p-GaN layer successively.
In embodiments of the present invention, described deielectric-coating is by SiO
2, TiO
2, Al
2o
3, Ta
2o
5, Si
3n
4, one or more in TiN, AlN form.
In embodiments of the present invention, at the deielectric-coating of the p-GaN surface alternating deposit height low-refraction of extension, deielectric-coating forms upper limiting layer; The optical transparency that usual deielectric-coating sends quantum well, can not produce light absorption, therefore significantly can reduce light absorption; In addition relative to traditional AlGaN/GaN superlattice limiting layer structure, the depositing temperature of deielectric-coating is lower, about 300 DEG C, far below the growth temperature of multi-quantum well active region, therefore the degeneration that high growth temperature AlGaN/GaN superlattice limiting layer causes Multiple Quantum Well can significantly be reduced, the quality of effective lifting Multiple Quantum Well, the performance of improving laser device.
Embodiment two
Corresponding a kind of novel GaN base laser preparation method described in embodiment one, present invention also offers the embodiment of its manufacture process intermediate products (the second epitaxial wafer).Next, a kind of novel GaN base second epitaxial wafer of concrete elaboration, as shown in Figure 4, described second epitaxial wafer comprises the first epitaxial wafer 0, deielectric-coating 9, p-GaN backbone 10 and deielectric-coating upper limiting layer 12, concrete:
Described deielectric-coating is positioned on the p-GaN layer 8 of described first epitaxial wafer, and described deielectric-coating has two ridge window (as shown in Figure 3);
Described p-GaN backbone 10 is arranged in described pair of ridge window, and with p-GaN layer 8 phase of described first epitaxial wafer in succession;
Described deielectric-coating upper limiting layer 12 is positioned on described p-GaN backbone 10, and wherein, described deielectric-coating upper limiting layer is made up of different refractivity material.
In embodiments of the present invention, described first epitaxial wafer 0, as shown in Figure 2, concrete structure comprises:
Be made up of substrate 1, n-GaN layer 2, lower limit layer 3, lower waveguide layer 4, multi-quantum well active region 5, upper ducting layer 6, electronic barrier layer 7 and p-GaN layer 8 successively.
Embodiment three
Corresponding a kind of novel GaN base laser preparation method described in embodiment one, present invention also offers the structure of a kind of novel GaN base laser that it manufactures, as shown in Figure 5, described laser comprises the first epitaxial wafer 0, deielectric-coating 9, p-GaN backbone 10, deielectric-coating upper limiting layer 12, P electrode 11 and N electrode (not shown), concrete:
Described deielectric-coating 9 is positioned on the p-GaN layer 8 of described first epitaxial wafer 0, and described deielectric-coating 9 has two ridge window;
Described p-GaN backbone 10 is arranged in described pair of ridge window, and with p-GaN layer 8 phase of described first epitaxial wafer 0 in succession;
Described deielectric-coating upper limiting layer 12 is positioned on described p-GaN backbone 10, and wherein, described deielectric-coating upper limiting layer 12 is made up of different refractivity material;
Described P electrode 11 is positioned on described deielectric-coating 9, or is positioned at (not shown) on described deielectric-coating 9, and around described p-GaN backbone 10 (as shown in Figure 5);
On the substrate that described N electrode is positioned at described first epitaxial wafer 01.
In embodiments of the present invention, described first epitaxial wafer 0, as shown in Figure 2, concrete structure comprises:
Be made up of substrate, n-GaN layer, lower limit layer, lower waveguide layer, multi-quantum well active region, upper ducting layer, electronic barrier layer and p-GaN layer successively.
In embodiments of the present invention, be that described deielectric-coating 9 is by SiO
2, TiO
2, Al
2o
3, Ta
2o
5, Si
3n
4, one or more in TiN, AlN form.
Embodiment four
The embodiment of the present invention is in conjunction with concrete Preparation equipment, and the relevant parameter in preparation process, sets forth the preparation method of the how a kind of novel GaN base laser of specific implementation as described in embodiment one.Adopt the metal organic chemical vapor deposition equipment (MOCVD) of Aixtron company to carry out epitaxial growth in embodiments of the present invention, use NH
3, TMGa/TEGa, TMIn, TMAl etc. respectively as N, Ga, In, Al source, SiH
4and CP
2mg as dopant, H
2and N
2as the carrier gas of metal organic source.Adopt the GaN substrate of self-supporting as the substrate of growth laser in this experiment, described preparation method comprises the following steps:
S1: the GaN substrate 1 of self-supporting is put into MOCVD, it is 2 × 10 that the Si of the n-GaN layer 2, n-GaN of 1040 DEG C of growth 2um mixes concentration
18cm
-3;
S2: the n-Al of 1040 DEG C of growth 750nm successively
0.08ga
0.92n (Si:2 × 10
18cm
-3) lower limit layer 3,900 DEG C growth 120nm n-In
0.02ga
0.98n (Si:2 × 1017cm
-3) lower waveguide layer 4;
S3: growth 3 is to the non-In mixed
0.16ga
0.84n/GaN Multiple Quantum Well 5, the thickness that wherein InGaN quantum well and GaN build is respectively 2.5nm and 14nm, and growth temperature is respectively 750 DEG C and 840 DEG C;
S4: 900 DEG C of non-In mixed of growth 80nm successively
0.02ga
0.98the p-Al of the upper ducting layer 6,20nm of N
0.2ga
0.8n electronic barrier layer 7, wherein Mg mixes concentration is 5 × 10
19cm
-3;
S5: the p-GaN layer 8, Mg of growth 20nm is mixed concentration and is about 2 × 10
19cm
-3;
S6: epitaxial wafer is taken out MOCVD, puts into PECVD, the SiO after 350 DEG C of growth 40nm
2layer;
S7: photoetching, at SiO
2deielectric-coating 9 is outputed the window region of 3um along (1-100) direction; Adopt BOE to carry out wet etching, remove the SiO of window region
2, the p-GaN of window region is exposed;
S8: sample is put into the secondary epitaxy that MOCVD carries out p-GaN, growth temperature is 900 DEG C, and pressure is 200Torr, NH
3flow is the flow of 20000sccm, TEGa is 500sccm, Cp
2the flow of Mg is 250sccm, and growth time is 1500s, and the thickness of the p-GaN layer 10 of growth is about 200nm, and the p-GaN above window region there occurs epitaxial lateral overgrowth, and p-GaN thickness is about 160nm, and width is about 6um;
S9: by the method for lithography stripping, 350 DEG C of depositions, 4 couples of SiO directly over window region
2/ ZrO
2speculum, wherein often couple of SiO
2thickness be 77nm, ZrO
2thickness be about 50nm; Laser epitaxial sheet is carried out 800 DEG C to anneal under nitrogen atmosphere for 10 minutes, activate the Mg acceptor in p-GaN;
S10: by the method for lithography stripping, at the p-GaN surface alternating deposit height low-index material of secondary epitaxy, forms deielectric-coating upper limiting layer 12;
S11: by the Au of Ni and 500nm of p-GaN upper surface between deielectric-coating of the method for lithography stripping and side deposition 50nm, as the P electrode 11 of laser, 500 DEG C of annealing 180s in compressed air, to form good P type ohmic contact;
S12: epitaxial wafer is thinned to 80um, and chemical polishing is carried out to the back side;
S13: at the backside deposition Ti/Al/Ti/Au of laser, as the N electrode of laser;
S14: form laser device by scribing, cleavage, plated film etc.
Embodiment five
For verifying effect of the present invention, the embodiment of the present invention also utilizes the laser of a traditional structure, with laser of the present invention unlike, traditional structure laser upper limiting layer is the p-In of 500nm
0.16ga
0.84n/GaN superlattice structure, adopts identical ridge size (3um × 400um) and identical plating conditions, and form laser device, we compared for the output characteristic of two kinds of lasers.Conventional laser threshold current is 50mA, and laser threshold current of the present invention is only 30mA, reduces 40%; Conventional laser threshold voltage is 6V, and laser threshold voltage of the present invention only 4.5V, reduces 25%; Measure two kinds of laser internal losses by Hakki-Paoli method, be respectively 20cm
-1and 10cm
-1, relative to conventional laser, the internal loss of laser of the present invention reduces 50%, and therefore relative to conventional laser, the internal loss of laser of the present invention is less, and the operating voltage of laser is lower, and the threshold current of laser is less, and performance is more excellent.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a GaN base laser preparation method, is characterized in that, described preparation method comprises:
Deposition medium film in the surface p-GaN layer of the first epitaxial wafer;
By photoetching or etching mode, described deielectric-coating is formed two ridge window region, and described pair of ridge window region extends through described p-GaN layer;
Described p-GaN layer Epitaxial growth p-GaN within the scope of described pair of ridge window region;
At epitaxially grown p-GaN surface alternating deposit height low-index material, form deielectric-coating upper limiting layer.
Plated metal on deielectric-coating upper limiting layer, forms p-electrode by described plated metal.
2. preparation method according to claim 1, is characterized in that, between the backbone width that described epitaxially grown p-GaN is formed and backbone, the width of raceway groove, preset by the laser characteristic that will manufacture.
3. preparation method according to claim 1, is characterized in that, described on deielectric-coating upper limiting layer plated metal, be specially:
Plated metal on two backbones; Or, around two backbones, plated metal on described deielectric-coating; Or, cover described backbone mode plated metal.
4., according to the arbitrary described preparation method of claim 1-3, it is characterized in that, described first epitaxial wafer is implemented as:
Be made up of substrate, n-GaN layer, lower limit layer, lower waveguide layer, multi-quantum well active region, upper ducting layer, electronic barrier layer and p-GaN layer successively.
5., according to the arbitrary described preparation method of claim 1-3, it is characterized in that, described deielectric-coating is by SiO
2, TiO
2, Al
2o
3, Ta
2o
5, Si
3n
4, one or more in TiN, AlN form.
6. novel GaN base second epitaxial wafer, is characterized in that, described second epitaxial wafer comprises the first epitaxial wafer, deielectric-coating, p-GaN backbone and deielectric-coating upper limiting layer, concrete:
Described deielectric-coating is positioned on the p-GaN layer of described first epitaxial wafer, and described deielectric-coating has two ridge window;
Described p-GaN backbone is arranged in described pair of ridge window, and with the p-GaN layer of described first epitaxial wafer mutually in succession;
Described deielectric-coating upper limiting layer is positioned on described p-GaN backbone, and wherein, described deielectric-coating upper limiting layer is made up of different refractivity material.
7. the second epitaxial wafer according to claim 6, is characterized in that, described first epitaxial wafer concrete structure comprises:
Be made up of substrate, n-GaN layer, lower limit layer, lower waveguide layer, multi-quantum well active region, upper ducting layer, electronic barrier layer and p-GaN layer successively.
8. a novel GaN base laser, is characterized in that, described laser comprises the first epitaxial wafer, deielectric-coating, p-GaN backbone, deielectric-coating upper limiting layer, P electrode and N electrode, concrete:
Described deielectric-coating is positioned on the p-GaN layer of described first epitaxial wafer, and described deielectric-coating has two ridge window;
Described p-GaN backbone is arranged in described pair of ridge window, and with the p-GaN layer of described first epitaxial wafer mutually in succession;
Described deielectric-coating upper limiting layer is positioned on described p-GaN backbone, and wherein, described deielectric-coating upper limiting layer is made up of different refractivity material;
Described P electrode is positioned on described deielectric-coating, or is positioned on described deielectric-coating, and around described p-GaN backbone;
Described N electrode is positioned on the substrate of described first epitaxial wafer.
9. laser according to claim 8, is characterized in that, described first epitaxial wafer concrete structure comprises:
Be made up of substrate, n-GaN layer, lower limit layer, lower waveguide layer, multi-quantum well active region, upper ducting layer, electronic barrier layer and p-GaN layer successively.
10. laser according to claim 8 or claim 9, is characterized in that, be that described deielectric-coating is by SiO
2, TiO
2, Al
2o
3, Ta
2o
5, Si
3n
4, one or more in TiN, AlN form.
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|---|---|---|---|
| CN201510828233.5A CN105406358B (en) | 2015-11-25 | 2015-11-25 | A kind of GaN base laser preparation method and structure |
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|---|---|---|---|
| CN201510828233.5A CN105406358B (en) | 2015-11-25 | 2015-11-25 | A kind of GaN base laser preparation method and structure |
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| CN105406358A true CN105406358A (en) | 2016-03-16 |
| CN105406358B CN105406358B (en) | 2018-11-02 |
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| CN101150243A (en) * | 2006-09-20 | 2008-03-26 | 中国科学院半导体研究所 | A method for making GaN base laser tube core |
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| JP2012039148A (en) * | 2011-10-20 | 2012-02-23 | Sumitomo Electric Ind Ltd | Group iii nitride semiconductor laser element, and method of producing the same |
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| US20030138981A1 (en) * | 2001-03-06 | 2003-07-24 | Takashi Yamaguchi | Nitride based semiconductor laser element and method for fabricating the same |
| CN101150243A (en) * | 2006-09-20 | 2008-03-26 | 中国科学院半导体研究所 | A method for making GaN base laser tube core |
| CN101183642A (en) * | 2007-12-10 | 2008-05-21 | 厦门大学 | Method of producing p-GaN low-resistance Ohm contact |
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