CN102064471B - GaN-based semiconductor laser and manufacturing method thereof - Google Patents
GaN-based semiconductor laser and manufacturing method thereof Download PDFInfo
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- CN102064471B CN102064471B CN201010571217XA CN201010571217A CN102064471B CN 102064471 B CN102064471 B CN 102064471B CN 201010571217X A CN201010571217X A CN 201010571217XA CN 201010571217 A CN201010571217 A CN 201010571217A CN 102064471 B CN102064471 B CN 102064471B
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Abstract
The invention relates to a GaN-based semiconductor laser and a manufacturing method thereof, belonging to the field of semiconductor lasers. The device has the structure that a quantum cascade radiation layer is introduced between an n-type optical confinement layer and an n-type waveguide layer of the laser. By applying infrared radiation generated by the quantum cascade radiation layer when the laser works, the ionization of magnesium acceptor impurities in a p-type GaN waveguide layer, a p-type AlGaN optical confinement layer and a p-type GaN covering layer is realized, the carrier concentration of each p-type layer is increased, and the working voltage of the laser is reduced. The average Al component of the quantum cascade radiation layer is close to that of an n-type AlGaN optical confinement layer, thus the optical confinement factor of the laser has no obvious change. Although the voltage drop of the n-type layers can be increased when the laser works, the laser can still work at a lower voltage because the voltage drop of the p-type layers is greatly reduced. By applying the structure of the laser, the series resistance of the laser can be reduced to further reduce the working voltage of the laser and prolong the service life of the laser.
Description
Technical field
The invention belongs to field of semiconductor devices, be meant a kind of gallium nitride base semiconductor laser and preparation method thereof especially.
Background technology
As third generation semiconductor; Gallium nitride (GaN) and series material thereof (comprising aluminium nitride, aluminum gallium nitride, indium gallium nitrogen, indium nitride) are big with its energy gap, spectral region is wide (having covered from ultraviolet to infrared all band), heat-resisting quantity and good corrosion resistance, in opto-electronic device and field of microelectronic devices, have huge using value.The GaN base laser is a kind of very important GaN base optical electronic part; Because the light wave of its emission is in the royal purple optical band, the GaN base laser the activation of the storage of high density optical information, Projection Display, laser printing, subsurface communication, biological chemical reagent and medical aspect have important use and be worth.Because the ionization energy of acceptor impurity is big among P type GaN, the P type AlGaN; Like the ionization energy of magnesium addition among the GaN at 0.16eV between the 0.20eV; So big ionization energy makes the ionization rate less than 1% of magnesium addition; Can cause the decline of crystal mass and the increase of defect concentration and improve the magnesium doping content, the alms giver that the magnesium of ionization is increased compensates, and makes the hole concentration reduction on the contrary.Therefore, the doping of the p type of GaN, AlGaN is exactly to hinder the major obstacle that GaN base optical electronic part performance improves all the time.P type GaN ducting layer, P type AlGaN light limiting layer and the tectal hole concentration of P type GaN in the GaN base laser are on the low side, make the resistivity of p type part in the laser bigger than normal, cause the operating voltage of laser higher, can not be at steady operation under the Dc bias.Though employing AlGaN/GaN superlattice etc. can make operating voltage decrease, but still can not be from the higher problem of basic solution operating voltage.
Summary of the invention
The objective of the invention is to; A kind of gallium nitride base semiconductor laser of new structure is provided; It is to be utilized in to insert the AlGaN/GaN multi-quantum pit structure that one deck has the n type of quanta cascade radiation function between n type AlGaN/GaN superlattice light limiting layer and the n type GaN ducting layer; Under the prerequisite of the not obvious light restriction factor that influences laser; Utilize the electronics quanta cascade radiation in the AlGaN/GaN multi-quantum pit structure when laser is switched on of this AlGaN/GaN multi-quantum pit structure, produce the infrared radiation of the royal purple ray laser be different from electronics and hole-recombination in active area and launch, make this infrared light of magnesium acceptor impurity resonance absorption in P type GaN ducting layer, AlGaN light limiting layer and the GaN cover layer and ionization; Thereby increase substantially the hole concentration of p type layer; Reduce the resistivity of p type layer, reduce the operating voltage of laser, prolong the life-span of laser.
The invention provides a kind of gallium nitride base semiconductor laser, it is characterized in that, wherein be produced on the lower surface of substrate except that n type Ohmic electrode, other each layer is bottom-up to be comprised successively:
One substrate 10, substrate 10 are the gallium nitride substrate of n type (0001) face;
One lower limit layer 11, this lower limit layer 11 is made up of the AlGaN/GaN superlattice;
One quanta cascade radiating layer 12, this quanta cascade radiating layer was made up of 2-4 cycle;
The quanta cascade radiating layer is the Al of n type
0.25-0.3Ga
0.75-0.7The N/GaN multi-quantum pit structure, each cycle is followed successively by the AlGaN base layer that width is 1.9 to 2.1 nanometers from bottom to top; Width is the GaN trap layer of 2.6 to 2.8 nanometers; Width is that the AlGaN of 1.9 to 2.1 nanometers builds layer; Width is the GaN trap layer of 1.6 to 1.8 nanometers; Width is that the AlGaN of 1.4 to 1.6 nanometers builds layer; Width is the GaN trap layer of 1.6 to 1.8 nanometers; Whole quanta cascade radiating layer is made up of 2-4 cycle again;
The AlGaN/GaN MQW in a plurality of cycles;
-lower waveguide layer 13;
-active layer 14;
-electronic barrier layer 15;
One upper limiting layer 17, this upper limiting layer form ridged in etching two rear flank, ridged is divided into the non-ledge of central ledge and both sides;
One cover layer 18 after this cover layer etching finishes, has only the top reservation cover layer of the ridged central authorities ledge of upper limiting layer;
-insulating barrier 21, this insulating barrier 21 are produced on the side of upper limiting layer of the top and ridged central authorities ledge of the upper limiting layer that the non-ledge in ridged both sides still keeps;
One p type Ohmic electrode 22, this p type Ohmic electrode are produced on the upper surface and insulating barrier 21 of cover layer 18;
-n type Ohmic electrode 23, this n type Ohmic electrode is produced on the lower surface of substrate 10.
The manufacture method of described a kind of gallium nitride base semiconductor laser is characterized in that, comprises the steps:
1) gets a substrate 10;
2) make successively on the substrate 10 growth lower limit layer 11, quanta cascade radiating layer 12, lower waveguide layer 13, active layer 14, electronic barrier layer 15, on ducting layer 16, upper limiting layer 17 and cover layer 18;
3) form ridged after utilizing dry etching with upper limiting layer 17 both sides etchings, ridged central authorities ledge is etched away with the cover layer in the exterior domain 18, have only the top reservation cover layer of the ridged central authorities ledge of upper limiting layer to form ridge structure;
4) two sides of the upper limiting layer of the upper surface of the upper limiting layer 17 that still keeps of the non-ledge in the ridged both sides and ridged central authorities ledge make insulating barriers 21;
5) on the upper surface of cover layer 18 and insulating barrier 21, make p type Ohmic electrode 22;
6) at the lower surface manufacturing n type Ohmic electrode 23 of substrate 10, accomplish the making of device.
The present invention improves the structure of common ridged GaN base laser.It is characterized in that, insert the n type AlGaN/GaN multi-quantum pit structure that one deck has the quanta cascade radiation function between n type AlGaN/GaN superlattice light limiting layer in original GaN base semiconductor laser structure and the n type GaN ducting layer.The quanta cascade radiation of electronics takes place and produces the infrared radiation of the royal purple light that is different from electronics and hole-recombination in active area and launches when laser is switched in this AlGaN/GaN multi-quantum pit structure.The photon energy of this infrared radiation can change in certain interval through changing AlGaN/GaN multi-quantum pit structure parameter, is the infrared radiation band at center like energy with a certain photon energy in 0.17eV～0.19eV scope.Make this infrared light of magnesium acceptor impurity resonance absorption in P type GaN ducting layer, AlGaN light limiting layer and the GaN cover layer and ionization, a large amount of ionization of magnesium addition cause increasing substantially of p type layer holes concentration.Owing to the method for this ionization magnesium acceptor impurity, can reduce the doping content of the magnesium of each layer of p type simultaneously, thereby the hole mobility of each layer of p type is increased.In addition, owing to will realize the cascade radiation of electronics, just must the first excited state of the electronics of one-period be overlapped to realize transporting of electronics with the ground state of its front one-period through extra electric field at n type AlGaN/GaN multi-quantum pit structure.Therefore the quanta cascade radiating layer must have corresponding pressure drop; The cycle of quanta cascade radiating layer is many more; Pressure drop is just big more; For fear of excessive pressure drop, the AlGaN/GaN MQW that can select 2 to 4 cycles is as the quanta cascade radiating layer, makes parasitic pressure drop that the unlikely generation of introducing of quanta cascade radiating layer the is excessive and pressure drop of each layer of p type is significantly reduced.Thereby reduce the operating voltage of laser, prolong the working life of laser.
The parameter of each layer is at first confirmed in the making of AlGaN/GaN MQW quanta cascade radiating layer through theoretical modeling, utilize epitaxial device to grow device architecture then and be made into semiconductor laser tube core, through test device architecture is assessed at last.At first find the solution Schrodinger equation and Poisson's equation from being in harmony in AlGaN/GaN MQW zone; Obtain the AlGaN that contains different al component, different in width and build layer; And the ground state level and the first excited state energy level of electronics in the active area of the AlGaN/GaN multi-quantum pit structure of the GaN trap layer of different in width; And confirm AlGaN/GaN multi-quantum pit structure parameter according to the ionization energy of magnesium acceptor impurity among the GaN; Make the photon that electronics transition between first excited state and ground state produces, can cause resonance absorption and the ionization of magnesium acceptor impurity.Utilize molecular beam epitaxy (MBE) or metal organic chemical vapor deposition equipment such as (MOCVD) to grow the semiconductor laser epitaxial wafer then, utilize X-ray diffraction (XRD), transmission electron microscope (TEM) to confirm whether each layer reaches designing requirement through the growth parameter(s) of adjusting each layer.At last epitaxial wafer is processed semiconductor laser tube core through technologies such as etching, vapor deposition insulating barrier, electrode evaporation metal, cleavage, cavity surface film coating and encapsulation, confirm the operating voltage of laser again through luminous power-electric current (P-I), I-V test.
Description of drawings
Fig. 1 is the material structure sketch map of GaN base laser among the present invention;
Fig. 2 is the device architecture sketch map of ridged GaN base laser among the present invention;
Embodiment
The device of the GaN base semiconductor laser of the new structure that the present invention proposes prepares process and is: the gallium nitride material with n type (0001) face is a substrate 10, utilizes the equipment of MOCVD, MBE or other growth GaN material to grow device architecture.This structure comprises n type AlGaN/GaN superlattice lower limit layer 11, n type AlGaN/GaN MQW quanta cascade radiating layer 12; N type GaN lower waveguide layer 13, InGaN/GaN active layer 14, AlGaN electronic barrier layer 15, p type GaN go up ducting layer 16, P type AlGaN/GaN superlattice upper limiting layer 17 and P type GaN cover layer 18.Carve symmetrical ridged ledge structure with methods such as dry etchings, the ridged length direction is along [11-20] direction of gallium nitride.The steam coating silicon dioxide insulating barrier.Vapor deposition p type Ohm contact electrode metal and thermal annealing are realized p type Ohm contact electrode.Substrate 10 is thinned to about 200 μ m, at the lower surface evaporating n type Ohm contact electrode metal of gallium nitride substrate 10.Epitaxial wafer is divided into along [11-20] direction scribing of gallium nitride rectangular, with rectangular (11-20) face along gallium nitride be cleaved into the long laser tube core in the chamber of designing.Two chamber face vapor deposition dielectric reflection films at laser tube core.At last again the pressure welding extraction electrode, be packaged into laser device.
Embodiment 1
In order to further specify the effect of this device architecture, we are that the GaN base semiconductor laser of 405nm is the preparation process of this device architecture of example explanation with the operation wavelength.The material and the thickness of each layer are seen table 1.Specific as follows: as to utilize the MOCVD method on the gallium nitride substrate 10 of n type (0001) face, to grow device architecture.This structure comprises n type Al
0.2Ga
0.8(thickness is 0.76 μ m to N/GaN superlattice lower limit layer 12, and the GaN trap is wide to be 2.0nm, Al
0.2Ga
0.8It is 2.0nm that N builds wide, and doping content is 3 * 10
18Cm
-3), n type Al
0.30Ga
0.70[this layer is totally three cycles, and each cycle is followed successively by Al from bottom to top for N/GaN MQW quanta cascade radiating layer 12
0.30Ga
0.70N (1.9nm)/GaN (2.6nm)/Al
0.30Ga
0.70N (1.9nm)/GaN (1.6nm)/Al
0.30Ga
0.70N (1.4nm)/GaN (1.6nm), doping content is 3 * 10
17Cm
-3], (thickness is 0.08 μ m to n type GaN lower waveguide layer 13, and doping content is 5 * 10
15Cm
-3), n type In
0.15Ga
0.85(MQW is 5 cycles to N/GaN active region layer 14, and the InGaN trap is wide to be 3nm, and it is 8nm that GaN builds wide, and doping content is 3 * 10
17Cm
-3), P type Al
0.2Ga
0.8(thickness is 20nm to N electronic barrier layer 15, and doping content is 5 * 10
15Cm
-3), P type GaN goes up ducting layer 16 (thickness is 0.08 μ m, and doping content is 3 * 10
17Cm
-3), P type Al
0.16Ga
0.84(thickness is 0.6 μ m to N/GaN superlattice upper limiting layer 17, and the GaN trap is wide to be 2.5nm, Al
0.2Ga
0.8It is 2.5nm that N builds wide, and doping content is 8.0 * 10
17Cm
-3) and P type GaN cover layer 18 (thickness is 0.2 μ m, and doping content is 2.4 * 10
20Cm
-3).The growth parameter(s) of each layer of GaN base laser device architecture such as chamber pressure, growth temperature, III family and the flow of group V source can combine growth apparatus through simple experiment find be fit to growth the optimum value of design structure.Using reactive ion etching method to carve the outstanding partial width of ridged central authorities is ridged ledge structure 3.5 μ m, symmetry, rectangular [11-20] direction along gallium nitride of ridged.The steam coating silicon dioxide insulating barrier, vapor deposition p electrode Ohm contact electrode metal and thermal annealing are realized Ohm contact electrode.Substrate 10 is thinned to about 200 μ m, at the Ohm contact electrode metal of the lower surface evaporating n electrode of substrate.Be divided into rectangular along [11-20] direction scribing of gallium nitride epitaxial wafer.With rectangular (11-20) face cleavage coelosis length along gallium nitride is the laser tube core of 800 μ m.The a pair of TiO of front facet vapor deposition at laser tube core
2/ SiO
2Reflectance coating, three couples of TiO of rear facet vapor deposition
2/ SiO
2Reflectance coating.Pressure welding more at last, be packaged into laser device.
We find the solution the energy level that Schrodinger equation and Poisson's equation have calculated the active area of quanta cascade radiating layer through being in harmony certainly, and the ground state of active area SQW and first excited state level spacing are 0.19eV, when electric field strength is 1.73 * 10
5V/cm, and when having electric current to flow through, can realize cascade radiation, the launching centre energy is the infrared radiation band of 0.19eV, this radiation zone can cause the resonance absorption of magnesium addition among the GaN, causes the ionization of a large amount of impurity.Under the room temperature, the hole concentration of p type GaN ducting layer can reach 9.0 * 10
15Cm
-3More than, P type Al
0.16Ga
0.84The hole concentration of N/GaN superlattice upper limiting layer is reached for 8.0 * 10
15Cm
-3More than with the tectal hole concentration of P type GaN reach 6.0 * 10
18Cm
-3More than.The pressure drop that makes p type district is reduced to about 0.3V by present about 3.0V, and the pressure drop 0.58V of deduction quanta cascade radiating layer can make the operating voltage of laser reduce about 2.1V, reaches 5.4V.
Embodiment 2
In order to further specify the effect of this device architecture, as comparing, we are that the GaN base laser that does not comprise AlGaN/GaN MQW quanta cascade radiating layer of 405nm is that example is explained with the operation wavelength.This GaN base laser device architecture increases to the 0.8 μ m except not comprising AlGaN/GaN MQW quanta cascade radiating layer and lower limit layer thickness, and the parameter of other each layer, growth conditions, device size and manufacturing process and embodiment 1 are identical.Through test, the threshold current of this device is 110mA, and corresponding operating voltage is 7.5V.This device working life under 1.1 times of threshold currents is merely 20 hours.
Embodiment 3
For using value of the present invention is described, we are that the GaN base semiconductor laser of 450nm is the characteristics of this device architecture of example explanation again with the operation wavelength.Compare with embodiment 1, material of each layer and thickness change In into except active area
0.3Ga
0.7N/In
0.02Ga
0.98(MQW is 3 cycles to the N MQW, In
0.3Ga
0.7The N trap is wide to be 3nm, In
0.02Ga
0.98It is 5nm that N builds wide, and the Si impurity concentration is 3 * 10
16Cm
-3), the quanta cascade radiating layer is n type Al
0.25Ga
0.75The N/GaN MQW, in totally three cycles, each cycle is followed successively by Al from bottom to top
0.25Ga
0.75N (2.1nm)/GaN (2.8nm)/Al
0.25Ga
0.75N (2.1nm)/GaN (1.8nm)/Al
0.25Ga
0.75N (1.6nm)/GaN (1.8nm), doping content is 3 * 10
17Cm
-3Outward, the parameter of other each layer, growth conditions, device size and manufacturing process and embodiment 1 are identical.
We find the solution the energy level that Schrodinger equation and Poisson's equation have calculated the active area of quanta cascade radiating layer through being in harmony certainly, and the ground state of electronics and first excited state level spacing are 0.18eV in the active area, when electric field strength is 1.48 * 10
5V/cm, and when having electric current to flow through, can realize the quanta cascade radiation, the launching centre energy is the infrared radiation band of 0.18eV, this radiation zone can cause the resonance absorption of magnesium addition among the GaN, causes the ionization of a large amount of impurity.Under the room temperature, the hole concentration of p type GaN ducting layer can reach 9.0 * 10
15Cm
-3More than, p type Al
0.16Ga
0.84The hole concentration of N/GaN superlattice upper limiting layer is reached for 8.0 * 10
15Cm
-3More than with the tectal hole concentration of P type GaN reach 6.0 * 10
18Cm
-3More than.The pressure drop in p type district is reduced to about 0.3V by present about 3.0V, and the pressure drop 0.55V of deduction quanta cascade radiating layer can make the semiconductor laser that the operating voltage of laser does not more contain the identical wavelength of quanta cascade radiating layer reduce about 2.1V.
The layers of material of GaN base laser and parameter among table 1 the present invention
Claims (2)
1. a gallium nitride base semiconductor laser is characterized in that, wherein is produced on the lower surface of substrate (10) except that n type Ohmic electrode (23), and other each layer is bottom-up to be comprised successively:
One substrate (10), substrate (10) are the gallium nitride substrate of n type (0001) face;
One lower limit layer (11), this lower limit layer (11) is made up of the AlGaN/GaN superlattice;
One quanta cascade radiating layer (12), this quanta cascade radiating layer was made up of 2-4 cycle;
Wherein the quanta cascade radiating layer is the Al of n type
0.25-0.3Ga
0.75-0.7The N/GaN multi-quantum pit structure, each cycle is followed successively by the AlGaN base layer that width is 1.9 to 2.1 nanometers from bottom to top; Width is the GaN trap layer of 2.6 to 2.8 nanometers; Width is that the AlGaN of 1.9 to 2.1 nanometers builds layer; Width is the GaN trap layer of 1.6 to 1.8 nanometers; Width is that the AlGaN of 1.4 to 1.6 nanometers builds layer; Width is the GaN trap layer of 1.6 to 1.8 nanometers;
-lower waveguide layer (13);
-active layer (14);
-electronic barrier layer (15);
Ducting layer on one (16);
One upper limiting layer (17), this upper limiting layer form ridged in etching two rear flank, ridged is divided into the non-ledge of central ledge and both sides;
One cover layer (18) after this cover layer etching finishes, has only the top reservation cover layer of the ridged central authorities ledge of upper limiting layer;
-insulating barrier (21), this insulating barrier (21) are produced on the side of upper limiting layer of the top and ridged central authorities ledge of the upper limiting layer that the non-ledge in ridged both sides still keeps;
One p type Ohmic electrode (22), this p type Ohmic electrode are produced on the upper surface and insulating barrier (21) of cover layer (18).
2. the manufacture method of a kind of gallium nitride base semiconductor laser according to claim 1 is characterized in that, comprises the steps:
1) gets a substrate (10);
2) on substrate (10), make growth lower limit layer (11), quanta cascade radiating layer (12), lower waveguide layer (13), active layer (14), electronic barrier layer (15), last ducting layer (16), upper limiting layer (17) and cover layer (18) successively;
3) form ridged after utilizing dry etching with upper limiting layer (17) both sides etching, ridged central authorities ledge is etched away with the cover layer in the exterior domain (18), have only the top reservation cover layer of the ridged central authorities ledge of upper limiting layer to form ridge structure;
4) two sides of the upper limiting layer of the upper surface of the upper limiting layer (17) that still keeps of the non-ledge in the ridged both sides and ridged central authorities ledge make insulating barriers (21);
5) go up making p type Ohmic electrode (22) at the upper surface and the insulating barrier (21) of cover layer (18);
6) at the lower surface manufacturing n type Ohmic electrode (23) of substrate (10), accomplish the making of device.
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| CN102255244B (en) * | 2011-05-25 | 2013-04-17 | 北京化工大学 | GaN-based laser and method for measuring AlGaN/GaN superlattice resistivity |
| CN102227046A (en) * | 2011-05-25 | 2011-10-26 | 北京化工大学 | GaN (gallium nitride)-based semiconductor laser and manufacturing method thereof |
| CN102570308A (en) * | 2012-01-16 | 2012-07-11 | 苏州纳睿光电有限公司 | Nitride semiconductor laser |
| CN103972335A (en) * | 2014-05-26 | 2014-08-06 | 湘能华磊光电股份有限公司 | Light-emitting diode (LED) epitaxial layer structure and LED chip with same |
| CN105356297B (en) * | 2015-10-30 | 2018-08-07 | 武汉电信器件有限公司 | A kind of GaN base laser and corresponding manufacturing method |
| CN106785912B (en) * | 2016-05-26 | 2020-04-10 | 杭州增益光电科技有限公司 | Semiconductor laser and method for manufacturing the same |
| CN106207754A (en) * | 2016-09-20 | 2016-12-07 | 山东浪潮华光光电子股份有限公司 | A kind of GaN base laser epitaxial structure and growing method thereof |
| JP6356315B1 (en) * | 2017-05-29 | 2018-07-11 | 株式会社サイオクス | Nitride crystal substrate, semiconductor laminate, semiconductor laminate manufacturing method, and semiconductor device manufacturing method |
| CN109494567A (en) * | 2018-12-07 | 2019-03-19 | 中国工程物理研究院电子工程研究所 | More ridge type semiconductor lasers and preparation method thereof of crosstalk between a kind of reduction ridge |
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| CN1638220A (en) * | 2004-01-05 | 2005-07-13 | 夏普株式会社 | Nitride semiconductor laser device and method for fabrication thereof |
| EP2086003A2 (en) * | 2008-02-01 | 2009-08-05 | Sumitomo Electric Industries, Ltd. | Method of growing group III-V compound semiconductor, and method of manufacturing light-emitting device and electronic device |
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