CN101572288A - GaN-based multi-quantum well super light-emitting diode (SLED) and preparation method thereof - Google Patents
GaN-based multi-quantum well super light-emitting diode (SLED) and preparation method thereof Download PDFInfo
- Publication number
- CN101572288A CN101572288A CNA2009101118813A CN200910111881A CN101572288A CN 101572288 A CN101572288 A CN 101572288A CN A2009101118813 A CNA2009101118813 A CN A2009101118813A CN 200910111881 A CN200910111881 A CN 200910111881A CN 101572288 A CN101572288 A CN 101572288A
- Authority
- CN
- China
- Prior art keywords
- gan
- type
- layer
- growth
- superlattice
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Led Devices (AREA)
Abstract
The invention provides a GaN-based multi-quantum well super light-emitting diode (SLED) with higher extraction efficiency and output power and a preparation method thereof, relating to a light-emitting diode (LED). The SLED is provided with a sapphire substrate on which a multi-layer heterostructure epitaxially grows; the multi-layer heterostructure is provided with a low-temperature GaN buffer layer, an N-type GaN electrode contact layer, an N-type AlGaN/GaN superlattice light limiting layer, an N-type GaN wave guide layer, an InGaN/GaN multi-quantum well active layer, a p-type AlGaN electron blocking layer, a p-type GaN wave guide layer, a P-type AlGaN/GaN superlattice light limiting layer, a p-type GaN layer and a p-type InGaN/AlGaN superlattice electrode contact layer; an n-type electrode is arranged on the N-type GaN electrode contact layer and a p-type electrode is arranged on the p-type InGaN/AlGaN superlattice electrode contact layer.
Description
Technical field
The present invention relates to a kind of light-emitting diode, especially relate to a kind of third generation semi-conducting material GaN based multi-quantum well super light-emitting diode (SLED) (Supper Light-Emitting Diodes) and preparation method thereof.
Background technology
Superradiance is only propagated to have experienced in gain media by the photon of spontaneous radiation and is excited amplification process and obtains, and the spontaneous emission of amplification is called superradiance.Semiconductor super-radiation light emitting diode is with laser (LD) and all characteristics of light-emitting diode (LED): for traditional LED, its luminous mechanism is to send isotropic light source by the spontaneous emission of active layer, so in traditional rectangular cavity structure, just have serious total reflection problem, have only 2% luminous energy to overflow in theory, cause external quantum efficiency and power output low from the surface.And for the LD device, it is quite difficult realizing being excited swashing the condition of penetrating, and electric current injects and realizes population inversion at first greatly, and must possess vibration and modeling work simultaneously just can have laser to export when reaching gain greater than loss.Yet by contrast, super-radiance light emitting diode is then as long as realize gain of light process, allow the photon of spontaneous radiation in gain media, propagate, experience is excited amplification process, isotropic spontaneous emission light is transformed into choice direction is arranged output, does not need big electric current to inject and just can realize bigger power output.And the spectral region of general LD is little, with regard to several nanometers, though the LED spectral region is wide, but power output is little, and super-radiance light emitting diode (SLED) spectral region is wide, and power output is big, good directionality, thereby it has application widely in fields such as communication and sensings.The broad spectrum light source that needs in the dense wave division multipurpose of communication system (DWDM) for example, in optic fiber gyroscope navigation based on the desired broad spectrum light source of little incoherence, and optical time domain reflectometer, local area network (LAN), Optical Coherence Tomography Imaging Technology and optical information processing technical field etc.
Because SLED has than big with the power output of material LED device, therefore can be applied in the correlation technique of SLED on the GaN LED device, improve the luminous power of GaN base LED.GaN base LED reaches its maturity in the application of energy-conservation normal lighting light source, is considered to third generation solid light source, and its market potential is huge.III family-nitride semi-conductor material is because its good photoelectric characteristic, its ternary compound InGaN, by regulating the component of In in the alloy, energy gap can vary continuously to 3.4eV (GaN) from 0.7eV (InN) in theory, emission wavelength has covered whole visible light wave range and part ultraviolet light wave band, be widely used in active layer ([1] Chin～Hsiang CHEN of opto-electronic device LED and LD, Shoou～Jinn CHANGand Yan～Kuin SU.High～Indi μ m～Content InGaN/GaN Multiple～Quant μ m～Well Light～Emitting Diodes.Jpn.J.Appl.Phys, 2003; 42:2281; [2] Horng～Shyang Chen, Dong～Ming Yeh, Chih～Feng Lu, etal.White light gene～ration with CdSe～ZnS nanocrystals coated on anInGaN～GaN quant μ m～well blue/Green two～wavelength light～emitting diode.IEEEPHOTONICS TECHNOLOGY LETTERS, 2006; 18:NO.13).The material growing technology improves constantly and improves in recent years, luminous efficiency, stability and the life-span of present undersized GaN base LED has been greatly improved and the marketization, but since the refractive index of GaN sill more than air refractive index big, therefore for the LED of rectangular cavity structure, have only 27% luminous energy to overflow from the surface, thereby limited the luminous power of LED greatly,, done a lot of researchs both at home and abroad round the escapement ratio that improves photon.Nineteen ninety-five, ([3] Usui A such as Yoshida, Sunakawa H, Sakai A etal.Jpn.J.Appl.Phys, Part2,1997,36 (7B): L899) defective sets about having proposed the LEO growing technology from reduce crystal, reduced the dislocation density (4～5 orders of magnitude) of GaN epitaxial loayer effectively in addition at pterion GaN near dislocation-free.Thereby improved the luminous efficiency of LED greatly.A kind of method at the U.S.'s business-like raising photon escapement ratio adopts transparent substrates exactly, reduce the absorption of substrate, after LED has grown, opaque substrate etching is fallen photon, again transparent substrate and epitaxial wafer are bonded together, make the photon can be from each face outgoing.A kind of LED that adopts inverted structure, earlier substrate etching is got very thin, fine and improve light extraction efficiency in the reflectivity of utilizing electrode.L μ mileds company adopts transparent substrates, and the cross section is trapezoidal, and stereochemical structure is the chip structure of inverted pyramid shape, destroys the traditional die cube shaped, solves the total reflection problem and improves light extraction efficiency.The eighties in last century ([4] Qi Yun such as Burnham, Dai Ying, Li Anyi.Enhancement of the external quant μ mefficiency of light～emitting～diodes[J] .Electronic Components and Materials, 2003,22 (4): 43-45 (in Chinese)) proposed growth distribution Bragg reflecting layer structure, reduced substrate to the absorption of light and improve the escapement ratio of photon greatly.Also there is research to adopt and on the epitaxial wafer of having grown, carries out surface coarsening, the laser lift-off substrate is transparent substrates and substrate changed into the metal that heat conduction is good and reflectivity is good on the bonding again, adopt photonic crystal etc., all these researchs all are in order to improve the external quantum efficiency of LED device, thereby improve its luminous power, help the realization of great power LED.But up to the present, great power LED wants to become the solid-state illumination light source, also has the not high problem of efficient, and its power output still remains further to be improved.
In recent years, SLED is the object that people study always.The SLED of gallium aluminium arsenic/gallium arsenic (AlGaAs/GaAs) material system from about the early stage 850nm finally InGaAsP/1.3 μ m of indium phosphorus (InGaAsP/InP) material system and the SLED of 1.55 μ m; To the Multiple Quantum Well active area structure, to the strain gauge material active area structure, the main purpose of people's research and development all is to improve spontaneous radiation intensity, strengthens gain by one path from matching materials from the body material.The gain of light process of superradiation light-emitting and laser all is to be excited amplification process, and both fundamental differences are whether device exists vibration and modeling effect.Reduce the reflection and Fabry Perot (FP) vibration of chamber face, improving gain by one path is the key technology that realizes superradiation light-emitting.Adopt the InGaAsP/InP material system to make SLED at 1.3 and 1.55 mu m wavebands at present, in the material growth, because the appearance of Organometallic Chemistry gas deposition (MOCVD) system, active layer adopts the strained quantum well structure more; On tube core structure is made, adopt the Shuan Gou plane to bury or ridged waveguide structure reaches the purpose of wide spectral range, big power output.
Simultaneously, the research of GaN base LD has also obtained certain achievement, acquisition along with high-quality aluminum gallium nitride (AlGaN) and indium gallium nitrogen (InGaN) Multiple Quantum Well epitaxial material, at the bottom of nineteen ninety-five, ([5] S.Nakamura such as Nakamura of Japan Nichia company, M.Senoh, et al, Room～temperature continuous～wave operation of InGaN multi～quant μ m～well structure laser diodes[J], Jpn.J.Appl.Phys.Vol.34:L74 (1996)), succeeds in developing the sharp laser of penetrating of InGaN Multiple Quantum Well pulse for the first time with MOCVD method epitaxial growth GaN laser structure on Sapphire Substrate.First GaN base semiconductor laser in the world occurred, its structure is a strip structure.Afterwards, Nichia company adopts the growth of LEO growing technology and superlattice, and the improvement of device architecture has been improved the performance of GaN base LD greatly as reduce methods such as threshold current with ridge waveguide structure.Make GaN base LD continuous operation 10000h ([6] S.Nakamura at room temperature, M.Senoh, et al, Violet InGaN/GaN/AlGaN～50 ℃ of witha Fundamental of Based Laser Diodes Operable at Transverse Mode[J] .J pn.J.Appl.Phys, Vol.38:L226 (1999)).
High-power GaN base LED is the key that realizes semiconductor solid lighting.On the basis based on SLED and GaN base LD achievement in research, can realize that the making of GaN super-radiance light emitting diode realizes GaN based high-power LED.
Summary of the invention
The objective of the invention is to have the low deficiency that waits of power output, higher GaN based multi-quantum well super light-emitting diode (SLED) of a kind of light extraction efficiency and power output and preparation method thereof is provided at existing GaN base LED.
Technical scheme of the present invention is to adopt LP-MOCVD (low pressure metal organic chemical vapor deposition system) equipment, utilizes high-purity H
2, N
2As carrier gas, carry out the preparation of LED epitaxial wafer, by photoetching, etching, the deposition medium insulating barrier, technologies such as sputtering electrode obtain the LED device.
GaN based multi-quantum well super light-emitting diode (SLED) of the present invention is provided with Sapphire Substrate, epitaxial growth multilayer hetero-structure on Sapphire Substrate, multilayer hetero-structure is provided with low temperature GaN resilient coating from bottom to top, N type GaN contact electrode layer, N type AlGaN/GaN superlattice light limiting layer, N type GaN ducting layer, the InGaN/GaN multiple quantum well active layer, p type AlGaN electronic barrier layer, p type GaN ducting layer, P type AlGaN/GaN superlattice light limiting layer, p type GaN layer and p type InGaN/AlGaN superlattice contact electrode layer, on N type GaN contact electrode layer, be provided with n type electrode, on p type InGaN/AlGaN superlattice contact electrode layer, be provided with p type electrode.
The InGaN/GaN multiple quantum well active layer comprises trap layer (InGaN) and builds layer (GaN).
The thickness of low temperature GaN resilient coating is preferably 10～40nm, and the thickness of N type GaN contact electrode layer is preferably 2～3 μ m, and N type AlGaN/GaN superlattice light limiting layer can adopt 60～120 pairs superlattice, and periodic thickness is preferably 4～6nm; The thickness of N type GaN ducting layer is preferably 0.1～0.2 μ m; The thickness of the trap layer of InGaN/GaN multiple quantum well active layer is preferably 3～5nm, and the thickness of its Zhonglei layer is preferably 5～10nm.The thickness of p type AlGaN electronic barrier layer is preferably 20～50nm, the thickness of p type GaN ducting layer is preferably 0.1～0.2 μ m, p type AlGaN/GaN superlattice light limiting layer can adopt 60～120 pairs superlattice, periodic thickness is preferably 4～6nm, the thickness of p type GaN layer is preferably 0.1～0.2 μ m, p type InGaN/AlGaN superlattice contact electrode layer can contain 3～10 cycles, and periodic thickness is preferably 5～10nm.
The multiple quantum well active layer of described Multiple Quantum Well super-radiance light emitting diode can be provided with 3～10 pairs of traps and build structure.
Described Multiple Quantum Well super-radiance light emitting diode can adopt the slab waveguide structure, the ridged waveguide structure or the shape ridge waveguide structure etc. of falling from power.
Described p type InGaN/AlGaN superlattice contact electrode layer can be with 3～10 pairs of InGaN/AlGaN superlattice.
The preparation method of GaN based multi-quantum well super light-emitting diode (SLED) of the present invention, concrete steps are as follows:
1) Sapphire Substrate is packed into reative cell is at H
2Heat under the atmosphere, substrate is heat-treated;
2) growing low temperature GaN resilient coating on the heat treated Sapphire Substrate of process;
3) growth N type GaN contact electrode layer on low temperature GaN resilient coating;
4) growth N type AlGaN/GaN superlattice light limiting layer on N type GaN contact electrode layer;
5) growth N type GaN ducting layer on N type AlGaN/GaN superlattice light limiting layer;
6) growing InGaN/GaN multiple quantum well active layer on N type GaN ducting layer;
7) growing p-type AlGaN electronic barrier layer on the InGaN/GaN multiple quantum well active layer;
8) growing p-type GaN ducting layer on p type AlGaN electronic barrier layer;
9) growing P-type AlGaN/GaN superlattice light limiting layer on p type GaN ducting layer;
10) growing p-type GaN layer on P type AlGaN/GaN superlattice light limiting layer;
11) growing p-type InGaN/AlGaN superlattice contact electrode layer on p type GaN layer;
12) with epitaxially grown sample annealing;
13) preparation n type electrode on N type GaN contact electrode layer, preparation p type electrode gets the GaN based multi-quantum well super light-emitting diode (SLED) on p type InGaN/AlGaN superlattice contact electrode layer.
In step 1), described Sapphire Substrate is preferably the Sapphire Substrate that (0001) orientation is exempted to clean, and heating-up temperature is preferably more than 1050 ℃, and heat treatment period is preferably 10～20min, and chamber pressure is preferably 300～600Torr.
In step 2) in, the temperature of described growth is preferably 500～600 ℃, and the thickness of low temperature GaN resilient coating is preferably 10～40nm, and the pressure of growth is preferably 300～500Torr, and the TMGa flow of growth is preferably 40～70 μ mol/min, NH
3Flow is preferably 80～120mol/min.
In step 3), the temperature of described growth is preferably 1000～1100 ℃, and the pressure of growth is preferably 100～200Torr.
In step 4), the temperature of described growth is preferably 1000～1150 ℃, and the pressure of growth is preferably 50～100Torr, and N type AlGaN/GaN superlattice light limiting layer can adopt 60～180 pairs superlattice, and periodic thickness is preferably 4～6nm.
In step 5), the temperature of growth is preferably 1000～1100 ℃, and the thickness of described N type GaN ducting layer is preferably 0.1～0.2 μ m.
In step 6), the temperature of growth is preferably 700～800 ℃, and the thickness of described InGaN/GaN multiple quantum well active layer trap layer is preferably 3～5nm, and the thickness of building layer is preferably 5～10nm, and the pressure of growth is preferably 200～300Torr.
In step 7), the temperature of described growth is preferably 1000～1100 ℃, and the thickness of described p type AlGaN electronic barrier layer is preferably 20～50nm, and the pressure of growth is preferably 50～100Torr.
In step 8), the temperature of described growth is preferably 1000～1100 ℃, and the thickness of described p type GaN ducting layer is preferably 0.1～0.2 μ m, and the pressure of growth is preferably 50～100Torr.
In step 9), the temperature of described growth is preferably 1000～1100 ℃, and the pressure of described growth is preferably 50～100Torr, and p type AlGaN/GaN superlattice light limiting layer can adopt 60～120 pairs superlattice, and periodic thickness is preferably 4～6nm.
In step 10), the temperature of described growth is preferably 1000～1100 ℃, and the thickness of described p type GaN layer is preferably 0.1～0.2 μ m, and the pressure of growth is preferably 100～200Torr.
In step 11), described p type InGaN/AlGaN superlattice contact electrode layer can contain 3～10 cycles, and periodic thickness is preferably 5～10nm, and the temperature of growth is preferably 750～850 ℃.
In step 12), described annealing is preferably in 700～800 ℃ of N
210～the 20min that anneals under the atmosphere, the N of annealing
2Flow is preferably 1.5～2.5L/min.
High-purity trimethyl gallium (TMGa), trimethyl indium (TMIn), trimethyl aluminium (TMAl), two luxuriant magnesium (Cp are preferably adopted in Ga among the present invention, In, Mg, N, Si source
2Mg), NH
3And silane (SiH
4).
Compare with existing great power LED device, outstanding advantage of the present invention is:
1, traditional LED luminous mechanism is luminous by the spontaneous emission of active layer, it is only isotropic that it sends, so in traditional rectangular cavity structure, just have serious total reflection problem, have only 27% luminous energy to overflow in theory from the surface, cause external quantum efficiency low, power output is low.And for the LD device, realize being excited swashing and just penetrate greatly electric current and inject and realize population inversion, must possess vibration and modeling work simultaneously just can have laser to export when reaching gain greater than loss.Super-radiance light emitting diode is then as long as realize gain of light process, allow the photon of spontaneous radiation in gain media, propagate to have experienced and be excited amplification process, isotropic spontaneous emission light is transformed into choice direction is arranged output, does not need big electric current to inject and just can realize bigger power output.So advantage of the present invention is exactly the low shortcoming that overcomes traditional GaN base LED power output, utilize the high characteristics of super-radiance light emitting diode power output to obtain powerful GaN base LED.
2, utilize the epitaxial wafer of the relevant epitaxy technology growth great power LED device architecture of GaN base LD.
3, LED device architecture epitaxial wafer directly obtains by epitaxial growth, and its preparation method is similar to the preparation method of traditional LED, and is simpler than LD preparation of devices.
4, utilize P type InGaN/AlGaN superlattice as p type contact electrode layer, reduce its contact resistance greatly, can effectively reduce the operating voltage of LED.Overcome the shortcoming that p type ohmic contact is difficult to realize.
Description of drawings
Fig. 1 is the GaN base super-radiance light emitting diode epitaxial wafer grown junction composition of the embodiment of the invention.
Fig. 2 is the slab waveguide structure super-radiance light emitting diode cross-sectional structure schematic diagram of the embodiment of the invention.
Fig. 3 is the ridged waveguide structure super-radiance light emitting diode cross-sectional structure schematic diagram of the embodiment of the invention.
Fig. 4 is the shape ridged waveguide structure super-radiance light emitting diode cross-sectional structure schematic diagram of falling from power of the embodiment of the invention.
In Fig. 1～4,1. Sapphire Substrate, 2.N type GaN contact electrode layer, 3.N type AlGaN/GaN superlattice light limiting layer, 4.N type GaN ducting layer, 5.InGaN/GaN multiple quantum well active layer, 6.p type AlGaN electronic barrier layer, 7.p type GaN ducting layer, 8.P type AlGaN/GaN superlattice light limiting layer, 9.p type GaN layer, 10.p type InGaN/AlGaN superlattice contact electrode layer, 11.n the type electrode, 12.p type electrode, 13. dielectric insulation layer SiO
2Perhaps Si
xN
y, 14. polymer, 15. bonded substrate.
Embodiment
Adopt 3*2CCS LP-MOCVD equipment to carry out the epitaxial wafer growth.
Referring to Fig. 1, below provide the epitaxial wafer preparation method:
(1) (0001) orientation Sapphire Substrate 1 of exempting to clean is packed into reative cell is at H
2Be heated to 1060 ℃ of baking 10min under the atmosphere, chamber pressure is 500Torr.
(2) the low temperature GaN resilient coating (in Fig. 1, not drawing) that is 25nm at 530 ℃ of following growth thickness, growth pressure is 300Torr, the TMGa flow is 40 μ mol/min, NH
3Flow is 80mol/min.
(3) at 1030 ℃ of N type GaN contact electrode layers 2 of growing down, growth pressure is 100Torr.
(4) at 1050 ℃ of 60 pairs of N type AlGaN/GaN superlattice light limiting layers 3 of growing down, growth pressure 50Torr, periodic thickness are 6nm.
(5) at 1030 ℃ of N type GaN ducting layers 4 of growing down, growth pressure 200Torr, growth thickness are 0.1 μ m.
(6) cooling is 740 ℃ of following growing InGaN/GaN multiple quantum well active layer 5, and growth pressure is 300Torr.The thickness of trap layer is 3nm, and the thickness of building layer is 5nm.
(7) heat up at 1050 ℃ of following growing p-type AlGaN electronic barrier layers 6, growth thickness is 20nm, and growth pressure is 50Torr.Follow growing p-type GaN ducting layer 7.Thickness is 0.1 μ m.
(8) at 1050 ℃ of 60 pairs of P type AlGaN/GaN superlattice light limiting layers 8 of growing down, growth pressure 50Torr, periodic thickness are 6nm.
(9) then at 1050 ℃ of following growing p-type GaN layers 9, growth pressure is 100Torr.Lower the temperature at last at the p type InGaN/AlGaN superlattice contact electrode layer 10 in 750 ℃ of 10 cycles of growing down.Periodic thickness is 5nm.
(10) epitaxially grown sample at 800 ℃ of N
2The 10min that anneals under the atmosphere, N
2Flow is 2.0L/min.
The brief introduction of preparation of devices process is as follows:
On epitaxial wafer, make mask with photoresist, etch the N type contact area of light-emitting diode with lithographic method, then utilize photoresist to do mask and on p type table top, etch super-radiance light emitting diode slab waveguide structure, adopt photoetching then, the evaporation metal electrode is peeled off with the method for annealed alloy and is manufactured p type electrode and n type electrode.In order to reduce the reflection of end face, plate anti-reflection film at two exiting surfaces at last.
Fig. 2 provides the slab waveguide structure super-radiance light emitting diode cross-sectional structure schematic diagram of the embodiment of the invention.In Fig. 2,1. Sapphire Substrate, 2.N type GaN contact electrode layer, the restriction of 3.N type AlGaN/GaN superlattice light, 4.N type GaN ducting layer, 5.InGaN/GaN multiple quantum well active layer, 6.p type AlGaN electronic barrier layer, 7.p type GaN ducting layer, 8.p type AlGaN/GaN superlattice light limiting layer, 9.p type GaN layer, 10.p type InGaN/AlGaN superlattice contact electrode layer.11.n the type electrode, 12.p type electrode.Low temperature GaN resilient coating does not draw in Fig. 2.
Below provide the epitaxial wafer preparation method:
(1) (0001) orientation Sapphire Substrate of exempting to clean is packed into reative cell is at H
2Be heated to 1060 ℃ of baking 10min under the atmosphere, chamber pressure is 400Torr.
(2) the low temperature GaN resilient coating that is 30nm at 550 ℃ of following growth thickness, growth pressure is 400Torr, the TMGa flow is 50 μ mol/min, NH
3Flow is 100mol/min.
(3) at 1050 ℃ of N type GaN contact electrode layers of growing down, growth pressure 150Torr.
(4) at 1080 ℃ of 120 pairs of N type AlGaN/GaN superlattice light limiting layers of growing down, growth pressure 75Torr, periodic thickness are 5nm.
(5) at 1050 ℃ of N type GaN ducting layers of growing down, growth pressure 100Torr, growth thickness are 0.15 μ m.
(6) cooling is 780 ℃ of following growing InGaN/GaN multiple quantum well active layer, and growth pressure is 300Torr.The thickness of trap layer is 4nm, and the thickness of building layer is 8nm.
(7) heat up at 1080 ℃ of following growing p-type AlGaN electronic barrier layers, growth pressure is 75Torr, and growth thickness is 40nm.Follow growing p-type GaN ducting layer.Thickness is 0.15 μ m.
(8) at 1080 ℃ of 120 pairs of P type AlGaN/GaN superlattice light limiting layers of growing down, growth pressure 50Torr, periodic thickness are 5nm.
(9) then at 1080 ℃ of following growing p-type GaN layers, growth pressure is 150Torr.Lower the temperature at last at the p type InGaN/AlGaN superlattice contact electrode layer in 800 ℃ of 6 cycles of growing down.Periodic thickness is 8nm.。
(10) epitaxially grown sample at 750 ℃ of N
2The 20min that anneals under the atmosphere, N
2Flow is 2.0L/min.
The brief introduction of preparation of devices process is as follows:
On epitaxial wafer, make mask with photoresist, etch the N type contact area of light-emitting diode with lithographic method, then utilize photoresist to do mask and on p type table top, etch the super-radiance light emitting diode ridged waveguide structure, adopt photoetching then, the evaporation metal electrode is peeled off with the method for annealed alloy and is manufactured p type electrode and n type electrode.In order to reduce the reflection of end face, plate anti-reflection film at two exiting surfaces at last.
Fig. 3 provides the ridged waveguide structure super-radiance light emitting diode cross-sectional structure schematic diagram of the embodiment of the invention, in Fig. 3,1. Sapphire Substrate, 2.N type GaN contact electrode layer, 3.N type AlGaN/GaN superlattice light restriction, 4.N type GaN ducting layer, 5.InGaN/GaN multiple quantum well active layer, 6.p type AlGaN electronic barrier layer, 7.p type GaN ducting layer, 8.p type AlGaN/GaN superlattice light limiting layer, 9.p type GaN layer, 10.p type InGaN/AlGaN superlattice contact electrode layer.11.n the type electrode, 12.p type electrode, low temperature GaN resilient coating and unadulterated GaN layer do not draw in Fig. 3.
Below provide the epitaxial wafer preparation method:
(1) (0001) orientation Sapphire Substrate of exempting to clean is packed into reative cell is at H
2Be heated to 1060 ℃ of baking 10min under the atmosphere, chamber pressure is 300Torr.
(2) the low temperature GaN resilient coating that is 40nm at 580 ℃ of following growth thickness, growth pressure is 500Torr, the TMGa flow is 60 μ mol/min, NH
3Flow is 120mol/min.
(3) at 1030 ℃ of N type GaN contact electrode layers of growing down, growth pressure is 200Torr.
(4) 1150 ℃ of 180 pairs of N type AlGaN/GaN superlattice light restrictions of growth down, growth pressure 100Torr, periodic thickness are 4nm.
(5) at 1030 ℃ of N type GaN ducting layers of growing down, growth pressure 150Torr.Growth thickness is 0.1 μ m.
(6) cooling is 760 ℃ of following growing InGaN/GaN multiple quantum well active layer, and growth pressure is 300Torr.The thickness of trap layer is 5nm, and the thickness of building layer is 10nm.
(7) heat up at 1100 ℃ of following growing p-type AlGaN electronic barrier layers, growth pressure is 100Torr, and growth thickness is 50nm.Follow growing p-type GaN ducting layer, thickness is 0.2 μ m.
(8) at 1100 ℃ of 180 pairs of P type AlGaN/GaN superlattice light limiting layers of growing down, growth pressure 50Torr, periodic thickness are 4nm.
(9) then at 1100 ℃ of following growing p-type GaN layers, growth pressure is 200Torr.Lower the temperature at last at the p type InGaN/AlGaN superlattice contact electrode layer in 850 ℃ of 3 cycles of growing down.Periodic thickness is 10nm.
(10) epitaxially grown sample at 700 ℃ of N
2The 20min that anneals under the atmosphere, N
2Flow is 2.0L/min.
The brief introduction of preparation of devices process is as follows:
On epitaxial wafer, make mask with photoresist, etch the shape ridged waveguide structure of falling from power with lithographic method, utilize bonding techniques sample to be bonded on the material of conduction, utilize laser lift-off technique that nonconducting Sapphire Substrate is peeled off then, adopt photoetching at last, the evaporation metal electrode is peeled off with the method for annealed alloy and is being made p type electrode and n type electrode.In order to reduce the reflection of end face, plate anti-reflection film at two exiting surfaces at last.
Fig. 4 provides the shape ridged waveguide structure super-radiance light emitting diode cross-sectional structure schematic diagram of falling from power of the embodiment of the invention, in Fig. 4,1. Sapphire Substrate, 2.N type GaN contact electrode layer, 3.N type AlGaN/GaN superlattice light restriction, 4.N type GaN ducting layer, 5.InGaN/GaN multiple quantum well active layer, 6.p type AlGaN electronic barrier layer, 7.p type GaN ducting layer, 8.p type AlGaN/GaN superlattice light limiting layer, 9.p type GaN layer, 10.p type InGaN/AlGaN superlattice contact electrode layer, 11.n type electrode, 12.p the type electrode, 13. dielectric insulation layer SiO
2Perhaps Si
xN
y, 14. polymer, 15. bonded substrate.Low temperature GaN resilient coating and unadulterated GaN layer do not draw in Fig. 4.
Claims (10)
1. GaN based multi-quantum well super light-emitting diode (SLED), it is characterized in that being provided with Sapphire Substrate, epitaxial growth multilayer hetero-structure on Sapphire Substrate, multilayer hetero-structure is provided with low temperature GaN resilient coating from bottom to top, N type GaN contact electrode layer, N type AlGaN/GaN superlattice light limiting layer, N type GaN ducting layer, the InGaN/GaN multiple quantum well active layer, p type AlGaN electronic barrier layer, p type GaN ducting layer, P type AlGaN/GaN superlattice light limiting layer, p type GaN layer and p type InGaN/AlGaN superlattice contact electrode layer, on N type GaN contact electrode layer, be provided with n type electrode, on p type InGaN/AlGaN superlattice contact electrode layer, be provided with p type electrode.
2. a kind of GaN based multi-quantum well super light-emitting diode (SLED) as claimed in claim 1, the thickness that it is characterized in that low temperature GaN resilient coating is 10～40nm, the thickness of N type GaN contact electrode layer is 2～3 μ m, N type AlGaN/GaN superlattice light limiting layer adopts 60～120 pairs superlattice, and periodic thickness is 4～6nm; The thickness of N type GaN ducting layer is 0.1～0.2 μ m; The thickness of the trap layer of InGaN/GaN multiple quantum well active layer is 3～5nm.
3. a kind of GaN based multi-quantum well super light-emitting diode (SLED) as claimed in claim 1, the thickness that it is characterized in that p type AlGaN electronic barrier layer is 20～50nm, the thickness of p type GaN ducting layer is 0.1～0.2 μ m, p type AlGaN/GaN superlattice light limiting layer adopts 60～120 pairs superlattice, periodic thickness is 4～6nm, the thickness of p type GaN layer is 0.1～0.2 μ m, and p type InGaN/AlGaN superlattice contact electrode layer contains 3～10 cycles, and periodic thickness is 5～10nm.
4. a kind of GaN based multi-quantum well super light-emitting diode (SLED) as claimed in claim 1 is characterized in that the multiple quantum well active layer of described Multiple Quantum Well super-radiance light emitting diode is provided with 3～10 pairs of traps base structures.
5. a kind of GaN based multi-quantum well super light-emitting diode (SLED) as claimed in claim 1 is characterized in that described Multiple Quantum Well super-radiance light emitting diode adopts slab waveguide structure, ridged waveguide structure or the shape ridge waveguide structure of falling from power.
6. a kind of GaN based multi-quantum well super light-emitting diode (SLED) as claimed in claim 1 is characterized in that described p type InGaN/AlGaN superlattice contact electrode layer is with 3～10 pairs of InGaN/AlGaN superlattice.
7. the preparation method of GaN based multi-quantum well super light-emitting diode (SLED) as claimed in claim 1 is characterized in that concrete steps are as follows:
1) Sapphire Substrate is packed into reative cell is at H
2Heat under the atmosphere, substrate is heat-treated;
2) growing low temperature GaN resilient coating on the heat treated Sapphire Substrate of process;
3) growth N type GaN contact electrode layer on low temperature GaN resilient coating;
4) growth N type AlGaN/GaN superlattice light limiting layer on N type GaN contact electrode layer;
5) growth N type GaN ducting layer on N type AlGaN/GaN superlattice light limiting layer;
6) growing InGaN/GaN multiple quantum well active layer on N type GaN ducting layer;
7) growing p-type AlGaN electronic barrier layer on the InGaN/GaN multiple quantum well active layer;
8) growing p-type GaN ducting layer on p type AlGaN electronic barrier layer;
9) growing P-type AlGaN/GaN superlattice light limiting layer on p type GaN ducting layer;
10) growing p-type GaN layer on P type AlGaN/GaN superlattice light limiting layer;
11) growing p-type InGaN/AlGaN superlattice contact electrode layer on p type GaN layer;
12) with epitaxially grown sample annealing;
13) preparation n type electrode on N type GaN contact electrode layer, preparation p type electrode gets the GaN based multi-quantum well super light-emitting diode (SLED) on p type InGaN/AlGaN superlattice contact electrode layer.
8. the preparation method of GaN based multi-quantum well super light-emitting diode (SLED) as claimed in claim 7, it is characterized in that in step 1), the Sapphire Substrate that described Sapphire Substrate is exempted to clean for (0001) orientation, heating-up temperature is more than 1050 ℃, heat treatment period is 10～20min, and chamber pressure is 300～600Torr; In step 2) in, the temperature of described growth is 500～600 ℃, and the pressure of growth is 300～500Torr, and the TMGa flow of growth is 40～70 μ mol/min, NH
3Flow is 80～120mol/min; In step 3), the temperature of described growth is 1000～1100 ℃, and the pressure of growth is 100～200Torr; In step 4), the temperature of described growth is 1000～1150 ℃, and the pressure of growth is 50～100Torr, and N type AlGaN/GaN superlattice light limiting layer adopts 60～180 pairs superlattice, and periodic thickness is 4～6nm; In step 5), the temperature of growth is 1000～1100 ℃.
9. the preparation method of GaN based multi-quantum well super light-emitting diode (SLED) as claimed in claim 7 is characterized in that in step 6), and the temperature of growth is 700～800 ℃, and the pressure of growth is 200～300Torr; In step 7), the temperature of described growth is 1000～1100 ℃, and the pressure of growth is 50～100Torr; In step 8), the temperature of described growth is 1000～1100 ℃, and the pressure of growth is 50～100Torr.
10. the preparation method of GaN based multi-quantum well super light-emitting diode (SLED) as claimed in claim 7, it is characterized in that in step 9), the temperature of described growth is 1000～1100 ℃, the pressure of described growth is 50～100Torr, p type AlGaN/GaN superlattice light limiting layer adopts 60～120 pairs superlattice, and periodic thickness is 4～6nm; In step 10), the temperature of described growth is 1000～1100 ℃, and the pressure of growth is 100～200Torr; In step 11), described p type InGaN/AlGaN superlattice contact electrode layer contains 3～10 cycles, and periodic thickness is 5～10nm, and the temperature of growth is 750～850 ℃; In step 12), described annealing is at 700～800 ℃ of N
210～the 20min that anneals under the atmosphere, the N of annealing
2Flow is 1.5～2.5L/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101118813A CN101572288B (en) | 2009-05-27 | 2009-05-27 | GaN-based multi-quantum well super light-emitting diode (SLED) and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101118813A CN101572288B (en) | 2009-05-27 | 2009-05-27 | GaN-based multi-quantum well super light-emitting diode (SLED) and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101572288A true CN101572288A (en) | 2009-11-04 |
| CN101572288B CN101572288B (en) | 2011-01-05 |
Family
ID=41231577
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009101118813A Expired - Fee Related CN101572288B (en) | 2009-05-27 | 2009-05-27 | GaN-based multi-quantum well super light-emitting diode (SLED) and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101572288B (en) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102064471A (en) * | 2010-11-26 | 2011-05-18 | 北京化工大学 | GaN-based semiconductor laser and manufacturing method thereof |
| CN102969416A (en) * | 2012-11-01 | 2013-03-13 | 扬州中科半导体照明有限公司 | Nitride light-emitting diode (LED) epitaxial wafer and growing method thereof |
| CN103247729A (en) * | 2013-05-16 | 2013-08-14 | 合肥彩虹蓝光科技有限公司 | Epitaxial structure for improving illumination efficiency of high-power GaN-base LED (light emitting diode) and growth method |
| CN103500780A (en) * | 2013-09-29 | 2014-01-08 | 山西飞虹微纳米光电科技有限公司 | Gallium nitride (GaN)-based light-emitting diode (LED) epitaxy structure and preparation method thereof |
| CN103972335A (en) * | 2014-05-26 | 2014-08-06 | 湘能华磊光电股份有限公司 | Light-emitting diode (LED) epitaxial layer structure and LED chip with same |
| CN104022203A (en) * | 2013-02-28 | 2014-09-03 | 山东华光光电子有限公司 | GaN-based light-emitting diode structure and preparation method thereof |
| CN104134730A (en) * | 2014-08-19 | 2014-11-05 | 湘能华磊光电股份有限公司 | Epitaxial wafer, growing method and LED structure of Mg-doped electronic barrier layer |
| CN104716237A (en) * | 2013-12-17 | 2015-06-17 | 比亚迪股份有限公司 | GaN-based LED epitaxial wafer and preparation method thereof |
| EP2403018A3 (en) * | 2010-06-30 | 2015-12-09 | Seiko Epson Corporation | Light-emitting device using a superluminescent diode and corresponding projector |
| CN105304779A (en) * | 2014-07-31 | 2016-02-03 | 惠州比亚迪实业有限公司 | GaN-based LED structure and formation method thereof |
| CN105762236A (en) * | 2014-12-15 | 2016-07-13 | 中国科学院苏州纳米技术与纳米仿生研究所 | Nitride super luminescent diode and preparation method thereof |
| CN105987323A (en) * | 2015-02-12 | 2016-10-05 | 中国科学院理化技术研究所 | Light source module and display device |
| CN110768106A (en) * | 2018-07-26 | 2020-02-07 | 山东华光光电子股份有限公司 | Laser diode preparation method |
| CN112670378A (en) * | 2020-12-31 | 2021-04-16 | 深圳第三代半导体研究院 | Light emitting diode and manufacturing method thereof |
| CN112701160A (en) * | 2020-12-09 | 2021-04-23 | 华灿光电（浙江）有限公司 | Gallium nitride-based high-electron-mobility transistor epitaxial wafer and preparation method thereof |
-
2009
- 2009-05-27 CN CN2009101118813A patent/CN101572288B/en not_active Expired - Fee Related
Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2403018A3 (en) * | 2010-06-30 | 2015-12-09 | Seiko Epson Corporation | Light-emitting device using a superluminescent diode and corresponding projector |
| CN102064471B (en) * | 2010-11-26 | 2012-07-11 | 北京化工大学 | GaN-based semiconductor laser and manufacturing method thereof |
| CN102064471A (en) * | 2010-11-26 | 2011-05-18 | 北京化工大学 | GaN-based semiconductor laser and manufacturing method thereof |
| CN102969416A (en) * | 2012-11-01 | 2013-03-13 | 扬州中科半导体照明有限公司 | Nitride light-emitting diode (LED) epitaxial wafer and growing method thereof |
| CN104022203A (en) * | 2013-02-28 | 2014-09-03 | 山东华光光电子有限公司 | GaN-based light-emitting diode structure and preparation method thereof |
| CN104022203B (en) * | 2013-02-28 | 2017-02-08 | 山东浪潮华光光电子股份有限公司 | GaN-based light-emitting diode structure and preparation method thereof |
| CN103247729B (en) * | 2013-05-16 | 2016-03-30 | 合肥彩虹蓝光科技有限公司 | A kind of epitaxial structure and growing method improving high-power GaN-based LED luminous efficiency |
| CN103247729A (en) * | 2013-05-16 | 2013-08-14 | 合肥彩虹蓝光科技有限公司 | Epitaxial structure for improving illumination efficiency of high-power GaN-base LED (light emitting diode) and growth method |
| CN103500780A (en) * | 2013-09-29 | 2014-01-08 | 山西飞虹微纳米光电科技有限公司 | Gallium nitride (GaN)-based light-emitting diode (LED) epitaxy structure and preparation method thereof |
| CN103500780B (en) * | 2013-09-29 | 2016-03-30 | 山西飞虹微纳米光电科技有限公司 | A kind of extension of gallium nitride-based LED structure and preparation method thereof |
| CN104716237B (en) * | 2013-12-17 | 2017-08-04 | 比亚迪股份有限公司 | A kind of GaN base LED and preparation method thereof |
| CN104716237A (en) * | 2013-12-17 | 2015-06-17 | 比亚迪股份有限公司 | GaN-based LED epitaxial wafer and preparation method thereof |
| CN103972335A (en) * | 2014-05-26 | 2014-08-06 | 湘能华磊光电股份有限公司 | Light-emitting diode (LED) epitaxial layer structure and LED chip with same |
| CN105304779A (en) * | 2014-07-31 | 2016-02-03 | 惠州比亚迪实业有限公司 | GaN-based LED structure and formation method thereof |
| CN104134730B (en) * | 2014-08-19 | 2017-03-08 | 湘能华磊光电股份有限公司 | The epitaxial wafer of Mg doping electronic barrier layer, growing method and LED structure |
| CN104134730A (en) * | 2014-08-19 | 2014-11-05 | 湘能华磊光电股份有限公司 | Epitaxial wafer, growing method and LED structure of Mg-doped electronic barrier layer |
| CN105762236A (en) * | 2014-12-15 | 2016-07-13 | 中国科学院苏州纳米技术与纳米仿生研究所 | Nitride super luminescent diode and preparation method thereof |
| CN105762236B (en) * | 2014-12-15 | 2018-05-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | Nitride super-radiance light emitting diode and preparation method thereof |
| CN105987323A (en) * | 2015-02-12 | 2016-10-05 | 中国科学院理化技术研究所 | Light source module and display device |
| CN110768106A (en) * | 2018-07-26 | 2020-02-07 | 山东华光光电子股份有限公司 | Laser diode preparation method |
| CN112701160A (en) * | 2020-12-09 | 2021-04-23 | 华灿光电（浙江）有限公司 | Gallium nitride-based high-electron-mobility transistor epitaxial wafer and preparation method thereof |
| CN112701160B (en) * | 2020-12-09 | 2022-08-09 | 华灿光电（浙江）有限公司 | Gallium nitride-based high-electron-mobility transistor epitaxial wafer and preparation method thereof |
| CN112670378A (en) * | 2020-12-31 | 2021-04-16 | 深圳第三代半导体研究院 | Light emitting diode and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101572288B (en) | 2011-01-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101572288B (en) | GaN-based multi-quantum well super light-emitting diode (SLED) and preparation method thereof | |
| US11258231B2 (en) | GaN-based VCSEL chip based on porous DBR and manufacturing method of the same | |
| Feng et al. | On-chip integration of GaN-based laser, modulator, and photodetector grown on Si | |
| US8735185B2 (en) | Light emitting device and fabrication method thereof | |
| TWI420687B (en) | Polarization-reversed iii-nitride light-emitting device | |
| JP3270476B2 (en) | Ohmic contacts, II-VI compound semiconductor devices, and methods of manufacturing these devices | |
| CN100495750C (en) | Gallium nitride based LED epitaxial slice structure and method for preparing the same | |
| US20040213309A9 (en) | Nitride semiconductor layer structure and a nitride semiconductor laser incorporating a portion of same | |
| KR100705886B1 (en) | Nitride semiconductor layer structure and a nitride semiconductor laser incorporating a portion of same | |
| CN103762286A (en) | LED with high light extraction efficiency | |
| CN102064471B (en) | GaN-based semiconductor laser and manufacturing method thereof | |
| US20140008609A1 (en) | Light emitting device with nanorod therein and the forming method thereof | |
| CN110233427B (en) | Two-dimensional exciton laser based on silicon-based gallium nitride and tungsten disulfide single-layer film and preparation method thereof | |
| JP4765415B2 (en) | Light emitting diode and manufacturing method thereof | |
| CN105762236B (en) | Nitride super-radiance light emitting diode and preparation method thereof | |
| CN115136328B (en) | Power photodiode, method for coupling an optical fiber to a power photodiode, and optical fiber power supply system | |
| KR102701214B1 (en) | Method for improving the performance of gallium-containing light-emitting devices | |
| CN116190514B (en) | LED epitaxial wafer, preparation method thereof and LED | |
| Lin et al. | Enhanced light output power and growth mechanism of GaN-based light-emitting diodes grown on cone-shaped SiO 2 patterned template | |
| KR100593912B1 (en) | Gallium nitride based semiconductor light emitting device and fabrication method thereof | |
| JP2011258843A (en) | Nitride semiconductor light-emitting element and method of manufacturing the same | |
| CN105655454B (en) | High modulation light emitting diode and preparation method thereof | |
| JPH08116092A (en) | Semiconductor light emitting element and its manufacture | |
| CN114142344B (en) | Method and device for improving electrical characteristics of blue and green light semiconductor lasers | |
| CN102222735A (en) | Method for manufacturing core of infrared semiconductor light-emitting tube capable of emitting light from side direction |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: EPITOP PHOTOELECTRIC TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: XIAMEN UNIVERSITY Effective date: 20150309 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 361005 XIAMEN, FUJIAN PROVINCE TO: 243000 MAANSHAN, ANHUI PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20150309 Address after: 243000 Anhui Province Economic and Technological Development Zone Ma'anshan City Baoqing Road No. 399 Building 1 Patentee after: Epitop Photoelectric Technology Co., Ltd. Address before: Xiamen City, Fujian Province, 361005 South Siming Road No. 422 Patentee before: Xiamen University |
|
| ASS | Succession or assignment of patent right |
Owner name: JIANGXI YUANRONG PHOTOELECTRIC CO., LTD. Free format text: FORMER OWNER: EPITOP PHOTOELECTRIC TECHNOLOGY CO., LTD. Effective date: 20150609 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 243000 MAANSHAN, ANHUI PROVINCE TO: 337000 PINGXIANG, JIANGXI PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20150609 Address after: 337000 No. 1 middle Chongqing Road, Anyuan economic transformation industrial base, Pingxiang, Jiangxi Patentee after: JIANGXI EPITOP OPTOELECTRONIC CO., LTD. Address before: 243000 Anhui Province Economic and Technological Development Zone Ma'anshan City Baoqing Road No. 399 Building 1 Patentee before: Epitop Photoelectric Technology Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110105 Termination date: 20210527 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |