CN105762236B - Nitride super-radiance light emitting diode and preparation method thereof - Google Patents
Nitride super-radiance light emitting diode and preparation method thereof Download PDFInfo
- Publication number
- CN105762236B CN105762236B CN201410776660.9A CN201410776660A CN105762236B CN 105762236 B CN105762236 B CN 105762236B CN 201410776660 A CN201410776660 A CN 201410776660A CN 105762236 B CN105762236 B CN 105762236B
- Authority
- CN
- China
- Prior art keywords
- layer
- light emitting
- emitting diode
- face
- super
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a kind of nitride super-radiance light emitting diodes（SLD）Including substrate and epitaxial structure layer, the epitaxial structure layer includes the buffer layer, lower optical confinement layer, lower waveguide layer, active layer, upper ducting layer, electronic barrier layer, upper optical confinement layer and the contact electrode layer that are sequentially formed in substrate upper surface, lower electrode is additionally provided on wherein described substrate lower face, and top electrode is equipped on the contact electrode layer, it is characterized in that the epitaxial structure layer top includes ridge waveguide structure, the ridge waveguide structure is mainly made of the arbitrary two or more combination in linearity sector, arcuate segments and angled section.The invention also discloses the preparation methods of foregoing SLD.The SLD devices of the present invention have both high-output power and the output spectrum of high quality, and stability is good, and service life is long.
Description
Technical field
The present invention relates to a kind of light emitting diode, more particularly, to a kind of nitride super-radiance light emitting diode (Superl μ
Minescent diodes, SLD) and preparation method thereof.
Background technology
Super-radiance light emitting diode (Superl μm of inescent diodes, SLD) grows up in the last thirty years
A kind of semiconductor photoelectric device, is a kind of incoherent light source with interior gain, and luminescence mechanism is under a kind of strong excited state
The radiation phenomenon of orientation.The characteristic of super-radiance light emitting diode is between semiconductor laser (Laser Diodes, LD) and shines
Between diode (Light-emitting diodes, LED), the deficiency of semiconductor laser and light emitting diode can be made up.
As people progressively go deep into the research of gallium nitride base semiconductor laser and gallium nitride substrate, based on gallium nitride
The super-radiance light emitting diode of base succeeds in developing (Appl. Phys. in first time in 2009 by Switzerland Co., Ltd EXALOS
Lett.95 (2009) 081107), its main application is in fields such as portable projector equipment, and in car light, display backlight
The fields of grade are with a wide range of applications.Gallium nitride base super-radiance light emitting diode needs the reflectivity for reducing end face to carry out preventer
Part lasing and form superradiance.Although at present there are many method for reducing end face reflection rate, these methods cannot improve
Ensure the output spectrum of high quality while the output power of super-radiance light emitting diode.
The content of the invention
It is a primary object of the present invention to provide a kind of nitride super-radiance light emitting diode, high output power is had both
With the output spectrum of high quality, so as to overcome deficiency of the prior art.
Another object of the present invention is to provide a kind of preparation method of nitride super-radiance light emitting diode.
To realize aforementioned invention purpose, the technical solution adopted by the present invention includes：
A kind of nitride super-radiance light emitting diode, including substrate and epitaxial structure layer, the epitaxial structure layer includes
It is sequentially formed in buffer layer, lower optical confinement layer, lower waveguide layer, active layer, upper ducting layer, the electronic blocking of substrate upper surface
Layer, upper optical confinement layer and contact electrode layer wherein being additionally provided with lower electrode on the substrate lower face, and are contacted in the electrode
Layer is equipped with top electrode, wherein the epitaxial structure layer top includes ridge waveguide structure, the ridge waveguide structure is main
It is made of the arbitrary two or more combination in linearity sector, arcuate segments and angled section.
As more one of preferred embodiment, the epitaxial structure layer is the homoepitaxy being grown on the substrate
Structure.
Further, the ridge waveguide structure is mainly formed in optical confinement layer.
As more one of preferred embodiment, the end face as light-emitting surface of the light emitting diode is equipped with one
Layer or more anti-reflection film, and other end be equipped with one layer or more Anti-reflective coating.
As more one of preferred embodiment, the end face as light-emitting surface of the light emitting diode is equipped with pair
It is less than 10 in the reflectivity for the light that active area generates-4Anti-reflection film, and other end be equipped with for active area generate light
The reflectivity of line is more than 99% Anti-reflective coating.
As one of more preferred case study on implementation, the ridge waveguide structure cathetus area accounts for 30%~50%, buckled zone
10%~20% is accounted for, angled section accounts for 30%~60%.
As more one of preferred embodiment, the radius of curvature of the buckled zone is more than 1000 microns, preferably exists
Between 1500 microns~3000 microns.
As more one of preferred embodiment, the inclination angle of the angled section, i.e., the waveguide of described light emitting diode
Direction and light output end direction are into 3~7 ° of angles.
As more one of preferred embodiment, the light emitting diode ridge waveguide structure includes line part and inclination
Portion, the rake front end face are the end face as light-emitting surface of the light emitting diode, and the straight line portion is distributed in described
Rake rear, and the other end that the line part rear end face is the light emitting diode.
By previous designs, can greatly utilize to the light for returning Cavity surface reflection, by highly reflecting films, end face is anti-forward
It penetrates.In this way, this some light, which is equivalent to, have passed through gain twice（Backward, active area is passed through twice forward）, therefore, last the past
The luminous power higher of Cavity surface output.
Further, the substrate includes Semiconductor substrate, and the Semiconductor substrate includes gallium nitride or carborundum serves as a contrast
Bottom, but not limited to this.
Further, the buffer layer preferably uses GaN layer.
Further, the light emitting diode be GaN base super-radiance light emitting diode, emission wavelength 400nm-
700nm。
Further, the active area includes multiple quantum wells or quantum dot.
Further, it is additionally provided with insulating layer on the electronic barrier layer and upper optical confinement layer.
Further, it is additionally provided in the insulating layer and top electrode as the metal layer for contacting electrode.
Further, described to power on extremely positive electrode, lower electrode is negative electrode.
A kind of preparation method of nitride super-radiance light emitting diode, including：
Epitaxial structure layer is grown on substrate,
And the epitaxial structure layer is performed etching, and form ridge waveguide structure in the epitaxial structure layer top.
Further, which further includes：It is set on the end face as light-emitting surface of the light emitting diode
One layer or more anti-reflection film, and one layer or more Anti-reflective coating is set on the other end of the light emitting diode.
Compared with prior art, advantages of the present invention includes：
1. homoepitaxy is carried out by using Semiconductor substrates such as gallium nitride or carborundum, compared to traditional with indigo plant
The hetero-epitaxy of jewel or other materials as substrate so that the dislocation density in Material growth greatly reduces, and device performance has
It significantly improves, the service life is also longer, and the end by dissociating hetero-epitaxy in the end face mass ratio tradition Sapphire Substrate formed
Face better quality, plated film can obtain better uniformity afterwards；
2. vertical chip knot can be formed as conductive substrates by using Semiconductor substrates such as gallium nitride or carborundum
Structure, the processing technology than traditional Sapphire Substrate horizontal chip structure are simpler；
3. by using front end face anti-reflection in SLD, rear end face increases anti-plated film mode, can efficiently use to the back-end
The light of face transmission, for the device of same chamber length, can reach higher output power；
4. by using straight line, bending and tilting the ridge waveguide structure being combined, rear end face on the one hand can be utilized
The light of reflection, on the other hand since front end face is using inclination rather than using curved waveguide, it is possible to reduce curved waveguide is brought
Bending loss, and be equivalent to the effect of image intensifer, and then improve output power；
5. by using the widened structure of light output end, it is possible to reduce Bulk current injection formula, the optical power density of light-emitting surface
And electrical power density, stability of the device in high-power operation is improved, is more suitable for high-power output device.
Description of the drawings
Fig. 1 is a kind of epitaxial structure signal of gallium nitride base super-radiance light emitting diode in an exemplary embodiments of the invention
Figure；
Fig. 2 is that a kind of lateral cross section structure of gallium nitride base super-radiance light emitting diode is shown in an exemplary embodiments of the invention
It is intended to；
Fig. 3 is a kind of top view of gallium nitride base super-radiance light emitting diode in the present invention；
Fig. 4 is the top view of another gallium nitride base super-radiance light emitting diode in the present invention；
Fig. 5 is a kind of performance test figure of gallium nitride base super-radiance light emitting diode in an exemplary embodiments of the invention.
Specific embodiment
As previously mentioned, in view of deficiency of the prior art, inventor is through numerous studies and practice, it is proposed that the present invention
Technical solution, one of which more preferred embodiment includes：Using in the Semiconductor substrates such as gallium nitride or carborundum
Epitaxial growth multilayer super-radiance light emitting diode structure, then by device technology, etching, particularly dry etching go out straight line,
The arbitrary two or more ridge structures being combined in bending and inclination, and then pass through coating technique etc. so that light is at least
Reflection on one face is suppressed, so as to form high-power superradiance.
And among one more specifically embodiment, SLD of the invention can include substrate, n-type successively from bottom to up
GaN layer, n-type AlGaN/GaN superlattices limiting layers, lower InGaN ducting layers, InGaN/GaN multi-quantum well active regions, upper InGaN
Ducting layer, p-type AlGaN electronic barrier layers, p-type AlGaN/GaN superlattices limiting layers, p-type GaN and p-type heavy doping GaN contacts
Layer has n-type electrode in GaN substrate, and p-type heavy doping GaN contact layers are equipped with p-type electrode.
And among the specific embodiment, the preparation process of the SLD can include：
1) n-type GaN bodies material or carborundum are used as substrate；
2）Using n-type AlGaN or n-type AlGaN/GaN superlattices as lower optical confinement layer；
3）Using n-type (or i types) InGaN as lower waveguide layer；
4) using i type InGaN/GaN Quantum Well, Quantum Well number can be 2-10 pairs as active area；
5) p-type (or i types) InGaN is used as upper ducting layer；
6）Using p-type AlGaN as electronic barrier layer；
7) p-type AlGaN or p-type AlGaN/GaN superlattices are used as upper optical confinement layer；
8) p-type (either n-type) GaN (or InGaN) is used to be used as contact layer；
9) Pd/Pt/Au is used as p-type contact metal, using Ti/Au as thickening electrode；
10) Ti/Al/Ti/Au or Ti/Al/Ni/Au are used as n-type contacting metal electrode；
11) straight line, bending are formed and is tilted using dry etching and be combined ridge waveguide structure, and pass through insulation
Layer isolation non-injection regions；
12) front end face, that is, front end face uses individual layer or multi-layered antireflection coating, and rear end face, that is, rear end face uses individual layer or more
Layer Anti-reflective coating.
Further, abovementioned steps 1）In, n-type GaN substrate uses the substrate or silicon carbide substrates of Ga polarity.
Further, abovementioned steps 2）In, n-type AlGaN lower limit layer materials can be used AlGaN/GaN superlattices or
AlGaN thick-layers also include the use of the AlGaN material of Al component-gradients.
Further, abovementioned steps 3）In, the doping of InGaN can be n-type or undoped, and component gradually increases, and increases
The mode added can be that step is alternatively continous way.
Further, abovementioned steps 4）In, InGaN/GaN Quantum Well can be used as active area for blue wave band, and
InGaN/GaN Quantum Well or quantum dot can be used as active area for green light and red spectral band.
Further, abovementioned steps 5）In, the doping of InGaN can be p-type or undoped, and component is gradually reduced, and is subtracted
Small mode can be that step is alternatively continous way.
Further, abovementioned steps 6）In, superlattices can be used in AlGaN electronic barrier layers, can also use thick-layer.
Further, abovementioned steps 7）In, p-type AlGaN upper limiting layer materials can be used AlGaN/GaN superlattices or
AlGaN thick-layers also include the use of the AlGaN material of Al component-gradients.
Further, abovementioned steps 8）In, contact layer can also use n-type material except using p-type GaN (or InGaN)
Material realizes contact using tunnel junctions.
Further, abovementioned steps 11）In, ridge waveguide structure is using straight line, bending and tilts the ridge being combined
Waveguiding structure, while the widened structure of rear end face can also be used, as shown in attached drawing 3~4.Preferably, ridge waveguide structure is
Straight line, bending and inclination are combined, and rectilinear end is rear end face, and beveled end is front end face, and ensure light-emitting surface ridge with before
End face angle is 3~7 degree.
Further, abovementioned steps 12）In, front end face anti-reflection film and rear end face Anti-reflective coating plated film can utilize monofilm
Or multilayer technique.Wherein, in front end face, i.e. light-emitting surface uses individual layer or multi-layered antireflection coating, can improve output power
And light reflection is further reduced, in rear end face, using individual layer or multilayer Anti-reflective coating, the light that back kick can be made defeated is anti-
It injects into waveguide, forms dual gain, improve output power.
Further, super-radiance light emitting diode structure of the invention be suitable for GaN base is blue, green, red spectral band (about
400nm-700nm)。
With reference to embodiments and attached drawing the technical solution of the present invention is further explained explanation.
Referring to Fig. 2, involved by the present embodiment be a kind of gallium nitride base super-radiance light emitting diode, including：n-GaN
Body substrate 1, n-type gallium nitride 2, n-type AlGaN/GaN superlattices or AlGaN thick-layers limiting layer 3, n-type or undoped lower InGaN ripples
Conducting shell 4, InGaN/GaN multi-quantum well active regions 5, p-type or undoped upper InGaN ducting layers 6, p-type AlGaN electronic barrier layers 7,
P-type AlGaN/GaN superlattices or AlGaN thick-layers limiting layer 8, p-type GaN and p-type heavy doping GaN contact layers 9, p-type electrode Pd/
Pt/Au 10, n-type electrode Ti/Al/Ti/Au or Ti/Al/Ni/Au 11, SiO2Or SiNxInsulating layer 12 thickeies metal
Ti/Au 13。
The gallium nitride base super-radiance light emitting diode can be used MOCVD and grow to be formed, and may include steps of：
1）The n-type GaN layer of 4.0 μm of growth, growth temperature are 1050 DEG C, growth pressure 150mbar, and growth rate is
2.5 m/h mix Si concentration for 3 × 1018/cm3；
2）Optical confinement layer under the n-type AlGaN/GaN superlattices of 750nm is grown, superlattice period 5nm, Al component is
15%, growth temperature is 1050 DEG C, growth pressure 150mbar, and average growth rate is 1 m/h, mixes Si concentration for 3 × 1018/
cm3；
3）The n-type InGaN lower waveguide layer layers of 80nm, In components 22% are grown, growth temperature is 1000 DEG C, and growth pressure is
150mbar, growth rate are 2.0 m/h, mix Si concentration for 3 × 1020/cm3；
4）Grow multi-quantum well active region, growth pressure 200mbar, 840 DEG C of barrier layer growth temperature, well layer growth temperature
740 DEG C, the component of well layer InGaN is 18%, and barrier layer is also using InGaN, In components 2%, 3 pairs in total；
5）Ducting layer on the p-type InGaN of 50nm, In components 26% are grown, growth temperature is 950 DEG C, and growth pressure is
200mbar, growth rate are 1 m/h, mix Mg concentration for 3 × 1018/cm3；
6）P-type AlGaN (20%Al components) electronic barrier layer of 30nm is grown, growth temperature is 950 DEG C, and growth pressure is
200mbar, growth rate are 1 m/h, mix Mg concentration for 5 × 1019/cm3；
7）Optical confinement layer on the p-type AlGaN/GaN superlattices of 500nm is grown, superlattice period 5nm, Al component is
15%, growth temperature is 950 DEG C, growth pressure 150mbar, and growth rate is 2.5 m/h, mixes Si concentration for 3 × 1018/cm3；
8）The n-type GaN contact layers of 30nm are grown, growth temperature is 800 DEG C, growth pressure 150mbar, and growth rate is
2.5 m/h mix Si concentration for 1 × 1019/cm3。
Abovementioned steps are undergone, epitaxial structure shown in Fig. 1 can be formed on substrate.
Further, the technological process that element manufacturing is carried out using foregoing epitaxial structure is as follows：
1) n-electrode Ohm contact electrode makes：Tri- kinds of metals of Pd, Pt, Au are deposited in epitaxial wafer surface, and thickness is respectively
30nm, 30nm, 50nm, evaporation metal pass through quick anneal oven high annealing and form Ohmic contact afterwards；
2）Litho pattern：Resist coating AZ5214 using the photolithography plate of design, is exposed with ultraviolet photolithographic machine MA6, warp
Cross development, it is rear dry and etc. after, leave ridge figure, such as Fig. 3；
3）Ridge etches：Using dry etching equipment, IBE or RIE etch ridge structure；
4）Thick gold is deposited in insulating layer：SiO is deposited using ICP-CVD2Or SiNxAs insulating layer, by ridge injection region with
Non-injection regions isolate, and then evaporation metal Ti/Au is as contact electrode；
5）Substrate thinning：By being thinned and grinding, by chip thinning to 120 m or so, dissociation and sliver are more conducive to；
6）Lower electrode fabrication：Whole plating metal Ti/Al/Ti/Au or Ti/Al/Ni/Au is as n-type contacting metal electrode；
7）Cleaved facets：Cleavage is carried out to epitaxial wafer using diamant；
8）End face coating, front facet reflectivity are less than 10-4, rear end face emissivity is more than 99%；
9）Sliver：Deep trouth is etched from substrate back by laser, and chip splits from front with breaking machine；
10）Encapsulation：Tube core is packaged using TO56 packing forms.
Further, refer to shown in Fig. 3-Fig. 4 be respectively the present embodiment gallium nitride base super-radiance light emitting diode device
Two kinds of forms of part, wherein, 14 be that rear end face plates individual layer either multilayer high transmittance film 15 is that front end face plates individual layer or multilayer
Anti-reflection film, 16A sections be straight line, bending and tilt and be combined straight line portion in ridge waveguide, 16B section be straight line, bend with
And the bent portion being combined in ridge waveguide is tilted, 16C sections are straight line, bending and inclination are combined inclining in ridge waveguide
Inclined portion point.
It refers to Fig. 5 and shows device performance using structure shown in Fig. 4（In fact, device performance base shown in Fig. 3, Fig. 4
This is close）And if only with tilt waveguide, then device both ends all can light extraction, even if plating high-reflecting film in backside face, to backward
The collection of the light of propagation is obviously also not as good as device of the present invention.If using curved waveguide, then in curved local light
Loss is very big, results in that the luminous power of end face output is smaller, and performance is equally also not as good as device of the present invention.Its reason may be
Straight line, bending are employed in, device of the present invention, tilts the ridge waveguide being combined, collection that on the one hand can be fabulous is from back of the body chamber
The light that face reflects on the other hand by shortening the length shared by bent portion, can reduce since curved waveguide causes
Bending loss.
It should be pointed out that the specific embodiment of present invention described above, is not intended to limit the scope of the present invention..
Any technique according to the invention design made various other corresponding changes and deformation, should be included in right of the present invention
It is required that protection domain in.
Claims (14)
1. a kind of nitride super-radiance light emitting diode, including substrate and epitaxial structure layer, the epitaxial structure layer include according to
The secondary buffer layer for being formed at substrate upper surface, lower optical confinement layer, lower waveguide layer, active layer, upper ducting layer, electronic barrier layer,
Upper optical confinement layer and contact electrode layer, wherein lower electrode is additionally provided on the substrate lower face, and in the contact electrode layer
It is equipped with top electrode, which is characterized in that the epitaxial structure layer top includes ridge waveguide structure, the ridge waveguide structure
It is made of linearity sector, buckled zone and angled section, the rake front end face is one as light-emitting surface of the light emitting diode
End face, the straight line portion is distributed in the rake rear, and the line part rear end face is the another of the light emitting diode
End face, for the wave guide direction of the light emitting diode with light output end direction into 3~7 ° of angles, the angle is the angled section
Inclination angle.
2. nitride super-radiance light emitting diode according to claim 1, which is characterized in that the epitaxial structure layer is made a living
The homoepitaxy structure being longer than on the substrate.
3. nitride super-radiance light emitting diode according to claim 1, which is characterized in that the ridge waveguide structure master
It is formed in optical confinement layer.
4. nitride super-radiance light emitting diode according to claim 1, which is characterized in that the work of the light emitting diode
One layer or more anti-reflection film is equipped with for the end face of light-emitting surface, and other end is equipped with one layer or more Anti-reflective coating.
5. nitride super-radiance light emitting diode according to claim 4, which is characterized in that the work of the light emitting diode
The reflectivity of the light generated for active area is equipped with less than 10 for the end face of light-emitting surface-4Anti-reflection film, and other end
The reflectivity for being equipped with the light generated for active area is more than 99% Anti-reflective coating.
6. nitride super-radiance light emitting diode according to claim 1, which is characterized in that the curvature of the buckled zone half
Footpath is between 1500 microns~3000 microns.
7. nitride super-radiance light emitting diode according to claim 1, which is characterized in that in the ridge waveguide structure
Linearity sector accounts for 30%~50%, and buckled zone accounts for 10%~20%, and angled section accounts for 30%~60%.
8. the nitride super-radiance light emitting diode according to any one of claim 1-7, which is characterized in that the substrate
Including Semiconductor substrate, the Semiconductor substrate includes gallium nitride or silicon carbide substrates.
9. the nitride super-radiance light emitting diode according to any one of claim 1-7, which is characterized in that described to shine
Diode be GaN base super-radiance light emitting diode, emission wavelength 400nm-700nm.
10. the nitride super-radiance light emitting diode according to any one of claim 1-7, which is characterized in that described to have
Source region includes multiple quantum wells or quantum dot.
11. the nitride super-radiance light emitting diode according to any one of claim 1-7, which is characterized in that the electricity
Insulating layer is additionally provided on sub- barrier layer and upper optical confinement layer.
12. nitride super-radiance light emitting diode according to claim 11, which is characterized in that the insulating layer and power on
The metal layer as contact electrode is additionally provided on extremely.
13. the preparation method of nitride super-radiance light emitting diode any one of claim 1-12, it is characterised in that bag
It includes：
Epitaxial structure layer is grown on substrate,
And the epitaxial structure layer is performed etching, and form ridge waveguide structure in the epitaxial structure layer top.
14. the preparation method of nitride super-radiance light emitting diode according to claim 13, it is characterised in that including：Institute
One layer or more anti-reflection film of setting on the end face as light-emitting surface of light emitting diode is stated, and in the another of the light emitting diode
One layer or more Anti-reflective coating is set on end face.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410776660.9A CN105762236B (en) | 2014-12-15 | 2014-12-15 | Nitride super-radiance light emitting diode and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410776660.9A CN105762236B (en) | 2014-12-15 | 2014-12-15 | Nitride super-radiance light emitting diode and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105762236A CN105762236A (en) | 2016-07-13 |
| CN105762236B true CN105762236B (en) | 2018-05-29 |
Family
ID=56336765
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410776660.9A Active CN105762236B (en) | 2014-12-15 | 2014-12-15 | Nitride super-radiance light emitting diode and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105762236B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106602404A (en) * | 2016-12-30 | 2017-04-26 | 中国工程物理研究院应用电子学研究所 | Semiconductor laser and manufacturing method thereof |
| CN110085707B (en) * | 2018-01-25 | 2021-02-26 | 中国科学院苏州纳米技术与纳米仿生研究所 | III-nitride semiconductor tunnel junction and preparation method and application thereof |
| CN108615796B (en) * | 2018-04-09 | 2019-12-06 | 中山大学 | SLD device of herringbone wave ridge structure based on GaN-LED secondary epitaxial ITO and preparation method thereof |
| CN109378708B (en) * | 2018-11-16 | 2020-01-17 | 华南师范大学 | Blue light edge-emitting laser and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101572288A (en) * | 2009-05-27 | 2009-11-04 | 厦门大学 | GaN-based multi-quantum well super light-emitting diode (SLED) and preparation method thereof |
| CN103022897A (en) * | 2012-12-28 | 2013-04-03 | 武汉华工正源光子技术有限公司 | Super-luminescent diode and method for manufacturing same |
| CN103022297A (en) * | 2012-12-24 | 2013-04-03 | 中国电子科技集团公司第四十四研究所 | High-power gamma-irradiation-resisting super-radiation light-emitting diode |
| CN103053035A (en) * | 2010-08-18 | 2013-04-17 | 松下电器产业株式会社 | Light emitting semiconductor device |
| CN103531700A (en) * | 2013-10-25 | 2014-01-22 | 中国电子科技集团公司第四十四研究所 | Waveguide structure capable of extending operating temperature range of SLD chip |
-
2014
- 2014-12-15 CN CN201410776660.9A patent/CN105762236B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101572288A (en) * | 2009-05-27 | 2009-11-04 | 厦门大学 | GaN-based multi-quantum well super light-emitting diode (SLED) and preparation method thereof |
| CN103053035A (en) * | 2010-08-18 | 2013-04-17 | 松下电器产业株式会社 | Light emitting semiconductor device |
| CN103022297A (en) * | 2012-12-24 | 2013-04-03 | 中国电子科技集团公司第四十四研究所 | High-power gamma-irradiation-resisting super-radiation light-emitting diode |
| CN103022897A (en) * | 2012-12-28 | 2013-04-03 | 武汉华工正源光子技术有限公司 | Super-luminescent diode and method for manufacturing same |
| CN103531700A (en) * | 2013-10-25 | 2014-01-22 | 中国电子科技集团公司第四十四研究所 | Waveguide structure capable of extending operating temperature range of SLD chip |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105762236A (en) | 2016-07-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11658267B2 (en) | Tunnel junction ultraviolet light emitting diodes with enhanced light extraction efficiency | |
| CN103762286B (en) | High light extraction efficiency luminescent device | |
| JP6896708B2 (en) | Ultraviolet light emitting device incorporating two-dimensional hole gas | |
| US11348908B2 (en) | Contact architectures for tunnel junction devices | |
| JP6275817B2 (en) | Planar contacts to pseudomorphic and optoelectronic devices | |
| JP5719493B2 (en) | Highly efficient (B, Al, Ga, In) N-based light emitting diode by surface roughening | |
| CN101572288B (en) | GaN-based multi-quantum well super light-emitting diode (SLED) and preparation method thereof | |
| TWI326949B (en) | Nitride semiconductor vertical cavity surface emitting laser | |
| Kao et al. | Light-output enhancement in a nitride-based light-emitting diode with 22 undercut sidewalls | |
| US20070029541A1 (en) | High efficiency light emitting device | |
| US7521329B2 (en) | Semiconductor light emitting diode having textured structure and method of manufacturing the same | |
| US9059356B1 (en) | Laterally injected light-emitting diode and laser diode | |
| JP2013530537A (en) | Deep ultraviolet light emitting diode | |
| CN105762236B (en) | Nitride super-radiance light emitting diode and preparation method thereof | |
| Chang et al. | Nitride-based LEDs with textured side walls | |
| KR101274651B1 (en) | Light emitting diode and method for fabricating the same | |
| CN110246941A (en) | The luminescent device grown on a silicon substrate | |
| GB2425652A (en) | A semiconductor light-emitting device | |
| CN106898948B (en) | Super-radiance light emitting diode or laser epitaxial structure and preparation method thereof | |
| Cai et al. | Monolithic photonic integrated circuit with a GaN-based bent waveguide | |
| JP2002076435A (en) | Semiconductor light emitting element | |
| Zhou et al. | Effect of ring-shaped SiO2 current blocking layer thickness on the external quantum efficiency of high power light-emitting diodes | |
| Kim et al. | Enhanced light output power of GaN-based light emitting diodes with overcut sideholes formed by wet etching | |
| CN113078244B (en) | Epitaxial structure of blue-green light chip for phototherapy and preparation method | |
| US20240145625A1 (en) | Method to improve performances of tunnel junctions grown by metal organic chemical vapor deposition |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |