CN106898948B - Super-radiance light emitting diode or laser epitaxial structure and preparation method thereof - Google Patents

Super-radiance light emitting diode or laser epitaxial structure and preparation method thereof Download PDF

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CN106898948B
CN106898948B CN201510953170.6A CN201510953170A CN106898948B CN 106898948 B CN106898948 B CN 106898948B CN 201510953170 A CN201510953170 A CN 201510953170A CN 106898948 B CN106898948 B CN 106898948B
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CN106898948A (en
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高雪
周坤
孙逸
冯美鑫
刘建平
孙钱
张书明
李德尧
张立群
杨辉
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Hangzhou gain Photoelectric Technology Co., Ltd.
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Hangzhou Gain Photoelectric Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The invention discloses a kind of super-radiance light emitting diode or laser epitaxial structures and preparation method thereof.The epitaxial structure includes the Si substrate set gradually from top to bottom, AlN buffer layer, AlGaN buffer layer, GaN ducting layer, N-shaped AlGaN layer, ducting layer on N-shaped or i type InGaN lower waveguide layer, active area, p-type or i type InGaN, p-type AlGaN electronic barrier layer, optical confinement layer, p-type or N-shaped GaN or InGaN contact layer on p-type AlGaN.Preferably, the active area uses i type InGaN/GaN multiple quantum wells or quantum dot active region.The thickness and the super-radiance light emitting diode of the GaN ducting layer or the ridged item of laser are wide quite.By the epitaxial structure of the invention, the carrier of injection can be effectively limited in very thin active area, the light intensity of its compound generation can expand in first wave guide structure from active area, and because GaN ducting layer therein is thicker, which can significantly improve the beam quality of super-radiance light emitting diode, laser.

Description

Super-radiance light emitting diode or laser epitaxial structure and preparation method thereof
Technical field
Present invention relates particularly to a kind of super-radiance light emitting diode or the epitaxial structures and its preparation process of laser, belong to Semiconductor photoelectronic device field.
Background technique
Super-radiance light emitting diode has many advantages, such as that wide spectrum, power are big as a kind of special light sources.Semiconductor laser Be widely used in due to the advantages that small in size, light-weight, photoelectric conversion efficiency is high, the service life is long and tunable wave length pumping, The military fields such as communication, material processing, medical and laser ranging, laser radar, laser guidance and laser night vision.But it partly leads In body laser on vertical pn-junction in-plane (lateral x), since active area thickness d is relatively thin, diffraction is very strong, thus Beam divergence angle is larger, and usually 30~45 °.And on being parallel to pn-junction lateral (y), wide item is usually several microns, this ratio Active layer thickness d is several times greater, and to more than ten times, diffraction is relatively weak, and correspondingly its dispersion angle is 10~20 °.Therefore, lead to What normal semiconductor laser issued is the fan-like beam of the ellipse of a branch of (30~45 °) × (10~20 °), as shown in Figure 2. In most of important application occasions, such as light-pumped solid state laser, focusing, collimation, fiber coupling, the light beam of semiconductor laser It requires using lens system collimation, focusing or shaping, this significantly limits it in the direct application in many fields.Therefore, Beam quality is improved, the direct application range of high power semiconductor lasers can be not only extended, design optics can also be exempted The trouble of orthopedic systems, meaning is very great, and this is also this field one of problem urgently to be resolved.
Summary of the invention
The main purpose of the present invention is to provide a kind of super-radiance light emitting diode or laser epitaxial structure and its preparations Method, to overcome deficiency in the prior art.
For realization aforementioned invention purpose, the technical solution adopted by the present invention includes:
The embodiment of the invention provides a kind of super-radiance light emitting diode or laser epitaxial structures comprising from top to bottom Wave under the Si substrate, AlN buffer layer, AlGaN buffer layer, GaN ducting layer, N-shaped AlGaN layer, N-shaped or the i type InGaN that set gradually Ducting layer on conducting shell, active area, p-type or i type InGaN, p-type AlGaN electronic barrier layer, optical confinement layer, p-type on p-type AlGaN Or N-shaped GaN or InGaN contact layer；Wherein the AlGaN buffer layer, GaN ducting layer and N-shaped AlGaN layer form first wave guide knot Structure, the InGaN ducting layer constitute second waveguide structure.
In some more preferred embodiments, the active area uses i type InGaN/GaN multiple quantum wells or quantum dot Active area.
In some more preferred embodiments, the super-radiance light emitting diode or laser have ridge structure, The thickness and the super-radiance light emitting diode of the GaN ducting layer or the ridged item of laser are wide quite." suitable " herein It is interpreted as " of substantially equal ", such as can be the two thickness difference within 1 μm.
The embodiment of the invention also provides a kind of sides for preparing the super-radiance light emitting diode or laser epitaxial structure Method comprising: AlN buffer layer, AlGaN buffer layer, GaN ducting layer, N-shaped AlGaN layer, N-shaped or i are sequentially formed on a si substrate Ducting layer, p-type AlGaN electronic barrier layer, p-type AlGaN glazing on type InGaN lower waveguide layer, active area, p-type or i type InGaN Learn limiting layer, p-type or N-shaped GaN or InGaN contact layer；Wherein the AlGaN buffer layer, GaN ducting layer and N-shaped AlGaN layer group At first wave guide structure, the InGaN ducting layer constitutes second waveguide structure.
Compared with prior art, the present invention at least have the advantages that by using on Si substrate AlGaN buffer layer, GaN ducting layer and N-shaped AlGaN layer are as super-radiance light emitting diode or the first wave guide structure of laser epitaxial structure, InGaN Ducting layer is as second waveguide structure, and since GaN ducting layer is thicker (wide quite with ridged item), which can significantly be mentioned High light beam quality (i.e. far-field spot is closer round).
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of laser in an exemplary embodiments of the invention；
Fig. 2 is a kind of far-field spot figure of conventional semiconductor laser；
Description of symbols: Si substrate 101, AlN buffer layer 102, the first AlGaN layer 103, the second AlGaN layer 104, GaN The upper ducting layer 109 of ducting layer 105, N-shaped AlGaN layer 106, InGaN lower waveguide layer 107, active area 108, InGaN, p-type AlGaN Optical confinement layer 111, p-type GaN contact layer 112 on electronic barrier layer 110, p-type AlGaN.
Specific embodiment
The one aspect of the embodiment of the present invention provides a kind of super-radiance light emitting diode or laser epitaxial structure, from Under to it is upper successively include: Si substrate, AlN buffer layer, AlGaN buffer layer, GaN ducting layer, N-shaped GaN (or AlGaN) layer, N-shaped (or i type) InGaN lower waveguide layer, i type InGaN/GaN multiple quantum wells/quantum dot active region, the upper waveguide of p-type (or i type) InGaN Optical confinement layer, p-type (or N-shaped) GaN (or InGaN) contact layer on layer, p-type AlGaN electronic barrier layer, p-type AlGaN.
Wherein, the AlN buffer layer on Si substrate and AlGaN buffer layer can be used as super-radiance light emitting diode or laser Lower light field limiting layer (Cladding layer), which can significantly improve the light limitation capability of active area.
Meanwhile AlGaN buffer layer, GaN ducting layer and the N-shaped AlGaN layer on Si substrate can be used as superradiation light-emitting two The first wave guide structure of pole pipe or laser structure, InGaN ducting layer is as second waveguide structure.
By the use of heretofore described epitaxial structure, the carrier of injection, which can be effectively limited in, very thin to be had In source region (about 10~100nm, preferably smaller than 100nm), the light intensity of their compound generations can expand to first wave from active area In guide structure, since the GaN ducting layer in first wave guide structure is thicker (wide quite with ridged item), which can be significant Improve the beam quality of super-radiance light emitting diode, laser (i.e. far-field spot is closer round).
The embodiment of the present invention is prepared outside the super-radiance light emitting diode or laser another aspect provides a kind of The method for prolonging structure, may include steps of:
1) use Si body material as substrate；
2) use AlN layers as buffer layer on Si；
3) use AlGaN buffer layer, GaN ducting layer and N-shaped AlGaN layer as first wave guide structure；
4) use N-shaped (or i type) InGaN as lower waveguide layer；
5) use i type InGaN/GaN Quantum Well or quantum dot as active area；
6) use p-type (or i type) InGaN as upper ducting layer；
7) use p-type AlGaN as electronic barrier layer；
8) use p-type AlGaN as upper optical confinement layer；
9) use p-type (either N-shaped) GaN (or InGaN) as contact layer.
Further, in abovementioned steps 3) in, the doping of GaN can be N-shaped or undoped.
Further, in abovementioned steps 4) in, the doping of InGaN can be N-shaped or undoped, component can with gradual change, The mode of gradual change can be that step can also be continous way.
Further, in abovementioned steps 5) in, it can be used InGaN/GaN Quantum Well as active area blue wave band, And it can be used InGaN/GaN Quantum Well or quantum dot as active area green light and red spectral band.
Further, in abovementioned steps 6) in, the doping of InGaN can be p-type or undoped, component can with gradual change, The mode of gradual change can be that step can also be continous way.
Further, in abovementioned steps 7) in, AlGaN electronic barrier layer can use superlattices, can also use thick-layer.
Further, in abovementioned steps 8) in, p-type AlGaN upper limiting layer material can be used AlGaN/GaN superlattices or AlGaN thick-layer also includes the AlGaN material using Al component-gradient.
Further, in abovementioned steps 9) in, N-shaped also can be used in addition to using p-type GaN (or InGaN) in contact layer Material use tunnel junctions realize contact.
Below with reference to an exemplary embodiments, the technical scheme of the present invention will be further described:
The embodiment is related to a kind of ridge blue laser (excitation wavelength~450nm), and epitaxial structure can refer to Fig. 1 institute Show, that is, include be sequentially formed on Si substrate 101 AlN buffer layer 102, the first AlGaN layer 103, the second AlGaN layer 104, The upper ducting layer 109 of GaN ducting layer 105, N-shaped AlGaN layer 106, InGaN lower waveguide layer 107, active area 108, InGaN, p-type Optical confinement layer 111, p-type GaN contact layer 112 on AlGaN electronic barrier layer 110, p-type AlGaN.
It is a kind of to grow that form the technique of the epitaxial structure may include following steps using MOCVD:
1) the AlN buffer layer of thickness about 265nm is grown in Si body substrate；
2) AlGaN layer of thickness about 210nm is grown, Al group is divided into 50%；
3) AlGaN layer of thickness about 325nm is grown, Al group is divided into 20%；
4) thick about 3.0 μm of the GaN ducting layer of growth, this layer undope；
5) thick about 1.5 μm of the AlGaN layer of growth, mixing Si concentration is 3 × 1018/cm3；
7) the InGaN lower waveguide layer for growing thickness about 80nm, mixing Si concentration is 5 × 1017/cm3；
8) multi-quantum well active region is grown, the group of well layer InGaN is divided into 16%, and 2 pairs in total；
9) ducting layer on the InGaN of thickness about 100nm is grown, this layer undopes；
10) the p-type AlGaN electronic barrier layer for growing thickness about 20nm, mixing Mg concentration is 2 × 1019/cm3；
11) optical confinement layer on the p-type AlGaN of thickness about 600nm is grown, mixing Si concentration is 1 × 1019/cm3；
12) the p-type GaN contact layer for growing thickness about 20nm, mixing Mg concentration is 5 × 1019/cm3。
After the growth for completing aforementioned epitaxial structure, also make to be formed into using various suitable methods known in the art Product device, process flow may include the following operation successively carried out: top electrode production；Litho pattern；Ridge etching, ridge About 4 μm of width；Substrate thinning；Lower electrode fabrication；Cleaved cavity surface, chamber are about 600 μm；Cavity surface film coating, front and back Cavity surface plate height respectively Reflectance coating is 90%, 70%；Sliver.
The ridge blue laser is tested it can be found that its excitation wavelength about 450.5nm, threshold current density is about 3.2kA/cm2, threshold operative voltage about 4.7V, the symmetry of far-field spot is more preferable, approximate circle.
The above is only a specific embodiment of the invention, it is noted that for the ordinary skill people of the art For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also answered It is considered as protection scope of the present invention.

Claims (17)

1. a kind of epitaxial structure of super-radiance light emitting diode, it is characterised in that including set gradually from top to bottom Si substrate, AlN buffer layer, AlGaN buffer layer, GaN ducting layer, N-shaped AlGaN layer, N-shaped or i type InGaN lower waveguide layer, active area, p-type Or optical confinement layer, p-type or N-shaped GaN or InGaN on ducting layer on i type InGaN, p-type AlGaN electronic barrier layer, p-type AlGaN Contact layer；Wherein the AlGaN buffer layer, GaN ducting layer and N-shaped AlGaN layer form first wave guide structure, the InGaN wave Conducting shell constitutes second waveguide structure；The super-radiance light emitting diode has inclination or curved ridge structure, and contact thereon is Positive electrode, lower contact is negative electrode or positive and negative electrode is contact in the same direction；Also, thickness and the institute of the GaN ducting layer The ridged item for stating super-radiance light emitting diode is wide quite.
2. the epitaxial structure of super-radiance light emitting diode according to claim 1, it is characterised in that: the active area uses I type InGaN/GaN multiple quantum wells or quantum dot active region.
3. a kind of epitaxial structure of laser, it is characterised in that including set gradually from top to bottom Si substrate, AlN buffer layer, AlGaN buffer layer, GaN ducting layer, N-shaped AlGaN layer, N-shaped or i type InGaN lower waveguide layer, active area, p-type or i type InGaN Upper ducting layer, p-type AlGaN electronic barrier layer, optical confinement layer, p-type or N-shaped GaN or InGaN contact layer on p-type AlGaN；Its Described in AlGaN buffer layer, GaN ducting layer and N-shaped AlGaN layer form first wave guide structure, the InGaN ducting layer constitutes the Two waveguiding structures；The laser has ridge structure, and contact thereon is positive electrode, and lower contact is negative electrode or positive and negative electricity Pole is contact in the same direction；Also, the ridged item of the thickness of the GaN ducting layer and the laser is wide quite.
4. the epitaxial structure of laser according to claim 3, it is characterised in that: the active area uses i type InGaN/ GaN multiple quantum wells or quantum dot active region.
5. the epitaxial structure of laser according to claim 3, it is characterised in that: the laser is that Si base is blue, green, red Optical band laser, launch wavelength are 400nm~700nm.
6. a kind of preparation method of the epitaxial structure of super-radiance light emitting diode, characterized by comprising: on a si substrate successively Form AlN buffer layer, AlGaN buffer layer, GaN ducting layer, N-shaped AlGaN layer, N-shaped or i type InGaN lower waveguide layer, active Ducting layer on area, p-type or i type InGaN, p-type AlGaN electronic barrier layer, optical confinement layer, p-type or N-shaped GaN on p-type AlGaN Or InGaN contact layer；Wherein the AlGaN buffer layer, GaN ducting layer and N-shaped AlGaN layer form first wave guide structure, described InGaN ducting layer constitutes second waveguide structure；The super-radiance light emitting diode has inclination or curved ridge structure, thereon Contact is positive electrode, and lower contact is negative electrode or positive and negative electrode is contact in the same direction；The thickness of the GaN ducting layer and institute The ridged item for stating super-radiance light emitting diode is wide quite.
7. preparation method according to claim 6, it is characterised in that: the active area uses i type InGaN/GaN Multiple-quantum Trap or quantum dot active region.
8. preparation method according to claim 6, it is characterised in that: the material of the GaN ducting layer be selected from n-type doping or The undoped GaN of person.
9. preparation method according to claim 6, it is characterised in that: the group in the upper ducting layer and/or lower waveguide layer Part is in step or continous way gradual change.
10. preparation method according to claim 6, it is characterised in that: the electronic barrier layer have superlattice structure or Thick-layer structure.
11. preparation method according to claim 6, it is characterised in that: the material of the upper optical confinement layer is selected from The AlGaN material of AlGaN/GaN superlattices, AlGaN thick-layer or Al component-gradient.
12. a kind of preparation method of the epitaxial structure of laser, characterized by comprising: it is slow to sequentially form AlN on a si substrate Rush layer, AlGaN buffer layer, GaN ducting layer, N-shaped AlGaN layer, N-shaped or i type InGaN lower waveguide layer, active area, p-type or i type The upper ducting layer of InGaN, p-type AlGaN electronic barrier layer, optical confinement layer, p-type or N-shaped GaN or InGaN contact on p-type AlGaN Layer；Wherein the AlGaN buffer layer, GaN ducting layer and N-shaped AlGaN layer form first wave guide structure, the InGaN ducting layer Constitute second waveguide structure；The laser has ridge structure, and contact thereon is positive electrode, and lower contact is negative electrode, or Positive and negative electrode is contact in the same direction；The thickness of the GaN ducting layer and the ridged item of the laser are wide quite.
13. preparation method according to claim 12, it is characterised in that: the active area uses i type InGaN/GaN volume Sub- trap or quantum dot active region.
14. preparation method according to claim 12, it is characterised in that: the material of the GaN ducting layer is selected from n-type doping Or undoped GaN.
15. preparation method according to claim 12, it is characterised in that: in the upper ducting layer and/or lower waveguide layer Component is in step or continous way gradual change.
16. preparation method according to claim 12, it is characterised in that: the electronic barrier layer have superlattice structure or Thick-layer structure.
17. preparation method according to claim 12, it is characterised in that: the material of the upper optical confinement layer is selected from The AlGaN material of AlGaN/GaN superlattices, AlGaN thick-layer or Al component-gradient.
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CN110021874B (en) * 2018-01-10 2021-05-11 中国科学院苏州纳米技术与纳米仿生研究所 Semiconductor laser and laser chip
CN108767659A (en) * 2018-06-04 2018-11-06 清华大学 A method of utilizing two-dimensional material interlayer epitaxial growth laser
CN110932094A (en) * 2019-11-24 2020-03-27 太原理工大学 Laser diode with asymmetric double-waveguide structure and preparation method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1564406A (en) * 2004-04-02 2005-01-12 华中科技大学 Ridge waveguide polarized don't-care semiconductor optical enlarger of integrated modular spot converter
US7190001B2 (en) * 2003-09-17 2007-03-13 Toyoda Gosei Co., Ltd. GaN based semiconductor light emitting device and method of making the same
CN101841124A (en) * 2009-03-18 2010-09-22 中国科学院半导体研究所 High-power fundamental transverse mode flat plate coupling optical waveguide semiconductor laser structure
CN104037287A (en) * 2014-06-10 2014-09-10 广州市众拓光电科技有限公司 LED epitaxial wafer grown on Si substrate and preparation method thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3104789B2 (en) * 1997-05-02 2000-10-30 日本電気株式会社 Semiconductor optical device and method of manufacturing the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7190001B2 (en) * 2003-09-17 2007-03-13 Toyoda Gosei Co., Ltd. GaN based semiconductor light emitting device and method of making the same
CN1564406A (en) * 2004-04-02 2005-01-12 华中科技大学 Ridge waveguide polarized don't-care semiconductor optical enlarger of integrated modular spot converter
CN101841124A (en) * 2009-03-18 2010-09-22 中国科学院半导体研究所 High-power fundamental transverse mode flat plate coupling optical waveguide semiconductor laser structure
CN104037287A (en) * 2014-06-10 2014-09-10 广州市众拓光电科技有限公司 LED epitaxial wafer grown on Si substrate and preparation method thereof

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