CN113078244B - Epitaxial structure of blue-green light chip for phototherapy and preparation method - Google Patents
Epitaxial structure of blue-green light chip for phototherapy and preparation method Download PDFInfo
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Abstract
The application relates to the field of electronic device manufacturing technology, and particularly discloses an epitaxial structure of a blue-green light chip for phototherapy and a preparation method. The epitaxial structure of the blue-green light chip for phototherapy comprises a substrate, and a reflection DBR layer, a first n-type GaN layer, a first quantum well layer, a first p-type GaN layer, an outgoing DBR layer, a tunnel junction and a GaN-based LED epitaxial wafer which are sequentially arranged on the substrate; the preparation method comprises the following steps: a reflection DBR layer, a first n-type GaN layer, a first quantum well layer, a first p-type GaN layer, an emergent DBR layer, a tunnel junction and a GaN-based LED epitaxial wafer are sequentially generated on a substrate. The epitaxial structure of the blue-green light chip for phototherapy has the advantages of relatively large light emitting angle and relatively narrow half wave width; in addition, the preparation method of the present application helps to reduce light loss.
Description
Technical Field
The application relates to the field of electronic device manufacturing technology, in particular to an epitaxial structure of a blue-green light chip for phototherapy and a preparation method.
Background
Phototherapy is a method for preventing and treating diseases by applying sunlight, visible rays and invisible rays in an artificial light source, the light emitting angle of a light source of the phototherapy instrument is large, the uniformity of the light source of the phototherapy instrument is improved, the half-wave width of light emitted by the light source of the phototherapy instrument is narrow, the effective irradiation intensity of the light source of the phototherapy instrument is enhanced, and therefore a proper light source is selected, and the treatment effect of the phototherapy instrument is improved. Some medical phototherapy instruments use the GaN-based blue-green LED epitaxial wafer as a light source, and the structure of the GaN-based blue-green LED epitaxial wafer has important influence on the characteristics of emitted light.
Referring to fig. 1, in the related art, a basic structure of a GaN-based blue-green LED epitaxial wafer is to sequentially grow a GaN buffer layer 2, an n-GaN layer 3, an InGaN/GaN multiple quantum well light emitting layer 4, and a p-GaN layer 5 on a sapphire substrate 1; the light emitting angle of the GaN-based blue-green LED epitaxial wafer is about 120 degrees, and the half-wave width of light emitted by the GaN-based blue-green LED epitaxial wafer is 15-17 nm.
Aiming at the related technologies, the inventor thinks that the half-wave width of the light emitted by the GaN-based blue-green LED epitaxial wafer is wide, which is not beneficial to improving the effective irradiation intensity of the phototherapy instrument.
Disclosure of Invention
In order to reduce the adverse effect of the half-wave width of the light source emission light of the phototherapy instrument on the effective irradiation intensity of the phototherapy instrument, the application provides an epitaxial structure of a blue-green light chip for phototherapy and a preparation method.
First aspect, the application provides a phototherapy epitaxial structure with blue green light chip adopts following technical scheme:
the utility model provides a phototherapy epitaxial structure with blue green light chip, includes the substrate and locates reflection DBR layer, first n type GaN layer, first quantum well layer, first p type GaN layer, outgoing DBR layer, tunnel junction and the GaN base LED epitaxial wafer on the substrate in proper order.
By adopting the technical scheme, the resonant cavity is formed by the first quantum well layer, the reflection DBR layer and the emission DBR layer, the first n-type GaN layer injects electrons into the first quantum well layer, the first p-type GaN layer injects holes into the first quantum well layer, and the electrons and the holes radiate and compound in the first quantum well layer to emit light; light generates reflected light waves on the surfaces of the reflection DBR layer and the emergence DBR layer, the reflected light waves are emitted back into the resonant cavity and vibrate in the resonant cavity, the length of the resonant cavity determines the mode of light vibration in the resonant cavity, the light waves conforming to the mode of the resonant cavity are emitted from the emergence DBR layer, and the light waves in other modes are reflected back to the first quantum well layer for photon reabsorption and cyclic utilization; therefore, the light beam emitted out of the resonant cavity is more concentrated, and the half-wave width is narrower; due to the tunneling effect of the tunnel junction, light emitted out of the resonant cavity enters the GaN-based LED epitaxial wafer and then is emitted out of the GaN-based LED epitaxial wafer, and the light emitting angle of the chip is increased due to the fact that the emitting angle of the GaN-based LED epitaxial wafer is relatively divergent; therefore, the epitaxial structure of the phototherapy blue-green light chip has a relatively large light emitting angle, and light emitted from the epitaxial structure of the phototherapy blue-green light chip has a relatively narrow half-wave width;
in addition, a double-quantum-well-layer LED structure is formed between the first quantum well layer and the GaN-based LED epitaxial wafer, and the double-quantum-well-layer LED structure is beneficial to improving light intensity and internal quantum efficiency and enhancing the synergistic effect between the first quantum well layer and the GaN-based LED epitaxial wafer;
consequently, use the epitaxial structure of blue-green light chip for phototherapy of this application as the light source of phototherapy instrument, be favorable to reducing the adverse effect of the effective irradiation intensity of phototherapy instrument to the half-wave width of phototherapy instrument light source emission light.
Preferably, the reflective DBR layer includes 32-38 pairs of group iii-v compound layers, and the exit DBR layer includes 8-12 pairs of group iii-v compound layers.
By adopting the above technical scheme, the logarithm of the III-V family compound layer that reflection DBR layer and outgoing DBR layer contain has important influence to the optical output power and half wave width of light, and when the reflection DBR layer includes 32-38 to III-V family compound layer, the outgoing DBR layer includes 8-12 when III-V family compound layer, the half wave width and the optical output power of the light that follow outgoing DBR layer and shoot out are comparatively stable, and the half wave width of light is narrower moreover, simultaneously, have great optical output power.
Preferably, each pair of the iii-v compound layers is composed of a GaN layer and an AlN layer stacked in this order or composed of a GaN layer and a GaAlN layer stacked in this order, the GaN layer being adjacent to the substrate, and the AlN layer or the GaAlN layer being adjacent to the first n-type GaN layer.
By adopting the technical scheme, the refractive indexes of the AlN layer and the GaAlN layer are lower, the refractive index of the GaN layer is higher, and the difference between the refractive indexes of the AlN layer and the GaAlN layer and the refractive index of the GaN layer is larger, so that the increase of the effective cavity length of the resonant cavity can be avoided, the resonant mode is reduced, and the improvement of the light reflectivity is facilitated.
Preferably, the GaN-based LED epitaxial wafer includes a second n-type GaN layer, and a second quantum well layer and a second p-type GaN layer sequentially disposed on the second n-type GaN layer.
By adopting the technical scheme, the light passing through the tunnel junction is incident and refracted by the second n-type GaN layer, the second quantum well layer and the second p-type GaN layer in sequence, and is emitted from the second p-type GaN layer together with the light emitted by the second quantum well layer, so that the light emitting angle is increased, and the uniformity of the light is improved.
Preferably, a p-type AlGaN layer is provided between the second quantum well layer and the second p-type GaN layer.
By adopting the technical scheme, the p-type AlGaN layer has a wider forbidden bandwidth, electrons can be limited in the second quantum well layer, the electron leakage is inhibited, and the luminous efficiency is enhanced.
Preferably, the first quantum well layer (9) and the second quantum well layer each comprise 5-50 pairs of InGaN/GaN layers, each pair of InGaN/GaN layers is composed of a quantum well layer InGaN and a quantum barrier layer GaN, one side of the quantum well layer InGaN is close to the substrate (6), and the other side of the quantum well layer InGaN is close to the quantum barrier layer GaN.
By adopting the technical scheme, the quantum well layer InGaN and the quantum barrier layer GaN are adopted, so that the effects of reducing electron leakage and enhancing hole injection are achieved, and the internal quantum efficiency is improved.
Preferably, an ohmic contact layer is arranged on the second p-type GaN layer, and the ohmic contact layer has a doping concentration of 1E20-1E24cm -3 A p-type GaN layer.
By adopting the technical scheme, the doping concentration is 1E20-1E24cm -3 The p-type GaN layer in between helps to form good ohmic contact between the second p-type GaN layer and the metal.
Preferably, the tunnel junction is doped with a concentration of 1E16-1E23cm -3 The tunnel junction is 10-60nm thick, the GaN/AlGaN layer structure is formed by sequentially stacking a GaN layer and an AlGaN layer, the GaN layer is close to the emergent DBR layer, and the AlGaN layer is close to the GaN-based LED epitaxial wafer.
By adopting the technical scheme, the doping concentration of the tunnel junction is too high, and the crystal quality of the second quantum well layer grown later is not goodTo influence, 1E16-1E23cm was selected -3 The doping concentration of the second quantum well layer is beneficial to reducing the adverse effect of the tunnel junction on the crystal quality of the second quantum well layer, and the tunneling effect of the tunnel junction is beneficial to being improved under the thickness of 10-60 nm.
Preferably, an AlN buffer layer with the thickness of 100-1000nm is arranged on the substrate, and the reflection DBR layer is arranged on the AlN buffer layer.
By adopting the technical scheme, the AlN buffer layer is beneficial to reducing lattice mismatch and thermal mismatch between the first n-type GaN layer and the sapphire substrate, and cracks of the first n-type GaN layer can be reduced.
In a second aspect, the present application provides a method for preparing an epitaxial structure of a blue-green light chip for phototherapy, which adopts the following technical scheme:
a preparation method of an epitaxial structure of a blue-green light chip for phototherapy comprises the following steps:
(1) growing a reflective DBR layer on a substrate;
(2) depositing n-type GaN on the reflecting DBR layer to obtain a first n-type GaN layer;
(3) depositing a quantum well layer on the first n-type GaN layer to obtain a first quantum well layer;
(4) depositing p-type GaN on the first quantum well layer to obtain a first p-type GaN layer;
(5) growing an emergent DBR layer on the first p-type GaN layer;
(6) growing a tunnel junction on the emergent DBR layer;
(7) and growing a GaN-based LED epitaxial wafer on the tunnel junction, and annealing to obtain the epitaxial structure of the blue-green light chip for phototherapy.
By adopting the technical scheme, the reflection DBR layer and the exit DBR layer are grown firstly, and the GaN-based LED epitaxial wafer is grown, so that the reflection DBR layer and the exit DBR layer can be prevented from shielding light emitted by the GaN-based LED epitaxial wafer, and the light loss can be reduced; moreover, the preparation steps are simple, and the epitaxial structure of the blue-green light chip for phototherapy is easy to prepare.
In summary, the present application has the following beneficial effects:
1. the GaN-based LED epitaxial wafer is connected with the emergent DBR layer through the tunnel junction, so that the luminous angle of the wafer is increased, and therefore the epitaxial structure of the blue-green chip for phototherapy is used as the light source of the phototherapy instrument, and the adverse effect of the half-wave width of light emitted by the light source of the phototherapy instrument on the effective irradiation intensity of the phototherapy instrument is reduced;
2. in the application, the reflecting DBR layer preferably comprises 32-38 pairs of III-V compound layers, the emergent DBR layer comprises 8-12 pairs of III-V compound layers, and the half wave width of light is reduced, and the emergent light power is increased;
3. the p-type AlGaN layer is preferable in the application, which is beneficial to inhibiting electron leakage and enhancing luminous efficiency;
4. in the application, the first quantum well layer and the second quantum well layer preferably comprise 5-50 pairs of InGaN/GaN layers, which is beneficial to improving the internal quantum efficiency;
5. the ohmic contact layer is preferably selected in the application, so that good ohmic contact between the second p-type GaN layer and the metal is facilitated;
6. preferred doping concentrations in this application are 1E16-1E23cm -3 The GaN/AlGaN layer structure with the thickness of 10-60nm is used as a tunnel junction, so that the adverse effect of the tunnel junction on the crystal quality of the second quantum well layer is reduced, and the tunneling effect of the tunnel junction is improved;
7. the AlN buffer layer is preferably selected, so that cracks of an epitaxial structure of the blue-green light chip for phototherapy can be reduced; 8. according to the method, the reflection DBR layer and the emergence DBR layer are grown first, and the GaN-based blue-green light LED chip structure is grown again, so that the shielding effect of the reflection DBR layer and the emergence DBR layer on light emitted by the GaN-based blue-green light LED chip structure is reduced, and the light loss is reduced.
Drawings
FIG. 1 is a schematic structural diagram of a GaN-based blue-green LED epitaxial wafer in the related art;
fig. 2 is a schematic structural diagram of an epitaxial structure of a blue-green light chip for phototherapy according to embodiment 1 of the present application;
fig. 3 is a schematic structural diagram of an epitaxial structure of a blue-green light chip for phototherapy in embodiment 16 of the present application;
fig. 4 is a schematic structural diagram of an epitaxial structure of a blue-green light chip for phototherapy according to embodiment 18 of the present application;
fig. 5 is a schematic structural view of an epitaxial structure of a blue-green light chip for phototherapy in example 21 of the present application.
Description of reference numerals: 1. a sapphire substrate; 2. a GaN buffer layer; 3. an n-GaN layer; 4. an InGaN/GaN multiple quantum well light emitting layer; 5. a p-GaN layer; 6. a substrate; 7. a reflective DBR layer; 8. a first n-type GaN layer; 9. a first quantum well layer; 10. a first p-type GaN layer; 11. emitting the DBR layer; 12. a tunnel junction; 13. a GaN-based LED epitaxial wafer; 131. a second n-type GaN layer; 132. a second quantum well layer; 133. a second p-type GaN layer; 134. a p-type AlGaN layer; 14. an ohmic contact layer; 15. an AlN buffer layer.
Detailed Description
The present application is described in further detail below with reference to figures 2-5 and examples.
Examples
As shown in Table one, the main difference between examples 1-11 is the thickness of the layers.
The following description will be made by taking preparation example 1 as an example.
Example 1
Referring to fig. 2, an epitaxial structure of a blue-green light chip for phototherapy is prepared according to the following steps:
(1) alternately depositing a 41nm thick GaN layer and a 43nm thick GaAlN layer on a substrate 6 at 1050 ℃ and 75Torr using an MOCVD apparatus, one GaN layer and one GaAlN layer constituting a pair of iii-v group compound layers, and obtaining a reflective DBR layer 7 after the deposition of the iii-v group compound layers is completed, wherein the substrate 6 is a sapphire substrate, and the doping concentration of the reflective DBR layer 7 is 0;
(2) the doping concentration 1E19cm was deposited on the reflective DBR layer 7 at 1050 deg.C and 75Torr -3 To obtain a first n-type GaN layer 8 of 2000nm thickness;
(3) alternately depositing a quantum well layer InGaN with the thickness of 3nm and a quantum barrier layer GaN with the thickness of 4nm on the first n-type GaN layer 8 at the temperature of 750 ℃ and under the condition of 250Torr, wherein one quantum well layer InGaN and one quantum barrier layer GaN form a pair of InGaN/GaN layers, and after the deposition of the InGaN/GaN layers is finished, a first quantum well layer 9 is obtained;
(4) depositing a doping concentration of 1E19cm on the first quantum well layer 9 at 1050 deg.C and 75Torr -3 To obtain a first p-type GaN layer 10 of 100nm thickness;
(5) alternately depositing a 41nm thick GaN layer and a 43nm thick GaAlN layer on the first p-type GaN layer 10 at 1050 ℃ and 75Torr, one GaN layer and one GaAlN layer constituting a pair of III-V group compound layers, and obtaining an emitting DBR layer 11 after the deposition of the III-V group compound layers is completed;
(6) depositing a doping concentration of 1E16cm on the emitting DBR layer 11 at 1075 deg.C and 75Torr -3 To obtain a tunnel junction 12;
(7) the doping concentration of 1E19cm was deposited on the tunnel junction 12 at 1050 deg.C and 75Torr -3 To obtain a second n-type GaN layer 131 of 2000nm thickness; depositing a quantum well layer InGaN with the thickness of 3nm and a quantum barrier layer GaN with the thickness of 4nm on the second n-type GaN layer 131 at the temperature of 750 ℃ and the temperature of 250Torr, wherein one quantum well layer InGaN and one quantum barrier layer GaN form a pair of InGaN/GaN layers, and after the deposition of the InGaN/GaN layers is finished, obtaining a second quantum well layer 132; a doping concentration of 1E19cm was deposited on the second quantum well layer 132 at 1050 deg.C and 75Torr -3 To obtain a second p-type GaN layer 133 with a thickness of 100 nm; the GaN-based LED epitaxial wafer 13 is composed of the second n-type GaN layer 131, the second quantum well layer 132, and the second p-type GaN layer 133, and annealed at 800 ℃ in a nitrogen atmosphere of 2.0L/min to obtain an epitaxial structure of a blue-green chip for phototherapy.
TABLE thickness of layers of examples 1-11
Examples 12 to 15
As shown in table two, examples 12-15 differ from example 10 in the doping concentration of the layers.
TABLE II doping concentrations of the layers of examples 12-15
Example 16
Referring to fig. 3, this example is different from example 14 in that, in step (8), a doping concentration of 1E20cm is first deposited on the second quantum well layer 132 at 1075 ℃ and 75Torr -3 To obtain a 70nm thick p-type AlGaN layer 134; a second p-type GaN layer 133 is then grown on the p-type AlGaN layer 134.
Example 17
This example is different from example 10 in that, in the (8) step, a doping concentration of 1E20cm was first deposited on the second quantum well layer 132 at 1075 ℃ and 75Torr -3 To obtain a 70nm thick p-type AlGaN layer 134; a second p-type GaN layer 133 is then grown on the p-type AlGaN layer 134.
Example 18
Referring to fig. 4, the present embodiment is different from embodiment 16 in that, in the (8) step, a doping concentration of 1E20cm is deposited on the second p-type GaN layer 133 -3 Resulting in a 100nm thick ohmic contact layer 14.
Example 19
The present embodiment is different from embodiment 18 in that the doping concentration of the ohmic contact layer 14 is 1E22cm -3 。
Example 20
The present embodiment is different from embodiment 18 in that the doping concentration of the ohmic contact layer 14 is 1E24cm -3 。
Example 21
Referring to fig. 5, this example is different from example 14 in that, in the (1) step, AlN was deposited on a substrate 6 using a PVD apparatus in advance at 550 ℃ and a reaction chamber pressure of 400Torr to obtain an AlN contact layer 15 having a thickness of 550nm, and then a reflective DBR layer 7 was grown on the AlN layer.
Comparative example
Comparative example 1
The comparative example provides a GaN-based chip prepared according to the following steps: a layer of non-doped GaN grows on a sapphire substrate by adopting an epitaxial technology, the thickness of the layer of non-doped GaN is 2 mu m, then an n-type GaN layer, a multi-quantum well and a P-type GaN layer sequentially grow on the non-doped GaN layer, and a GaN-based Light Emitting Diode (LED) is prepared by methods of photoetching, dry etching, metal deposition and the like to form a GaN-based chip on the sapphire substrate.
Comparative example 2
This comparative example differs from example 14 in that the reflective DBR layer 7 includes 30 pairs of group iii-v compound layers.
Comparative example 3
This comparative example differs from example 14 in that the reflective DBR layer 7 includes 38 pairs of group iii-v compound layers.
Comparative example 4
This comparative example differs from example 14 in that the emission DBR layer 11 includes 6 pairs of iii-v compound layers.
Comparative example 5
This comparative example differs from example 14 in that the emission DBR layer 11 includes 14 pairs of group iii-v compound layers.
Comparative example 6
This comparative example differs from example 14 in that the doping concentration of the reflective DBR layer 7 is 1E22cm -3 。
Comparative example 7
This comparative example differs from example 14 in that the first quantum well layer 9 and the second quantum well layer 132 each include 4 pairs of InGaN/GaN layers.
Comparative example 8
This comparative example is different from example 14 in that the first quantum well layer 9 and the second quantum well layer 132 each include 52 pairs of InGaN/GaN layers.
Comparative example 9
This comparative example differs from example 14 in that the thickness of the tunnel junction 12 is 8 nm.
Comparative example 10
This comparative example differs from example 14 in that the thickness of the tunnel junction 12 is 62 nm.
Comparative example 11
This comparative example differs from example 14 in that the GaN layers in the reflection DBR layer 7 and the exit DBR layer 11 are each replaced with an AlN layer.
Comparative example 12
This comparative example is different from example 14 in that the quantum well layers InGaN in the first and second quantum well layers 9 and 132 are each replaced with a quantum barrier layer GaN.
Performance test
For the products provided by examples 1-21 and comparative examples 1-12, the surface quality, half-wave width and light-emitting angle of the product are detected according to GB/T30854-; and detecting the internal quantum efficiency of the product according to GB/T30655-2014 'quantum efficiency test method in nitride LED epitaxial wafers', wherein the detection data are shown in the third table.
TABLE TRI-EXAMPLES 1-21 AND COMPARATIVE EXAMPLES 1-12 TEST DATA
It can be seen by combining examples 1 to 11 and comparative example 1 and combining table three that, compared with comparative example 1, the half-wave widths of examples 1 to 11 are all narrower, the light emitting angles are all above 90 °, and are relatively larger, the internal quantum efficiency is higher, and the surface quality is better, which indicates that, under the layer thicknesses of examples 1 to 11, the epitaxial structures of the prepared blue-green light chips for phototherapy all have narrower half-wave widths and larger light emitting angles, and when the chips are used as light sources of phototherapy instruments, the light emitting effects are better.
In combination with example 10, examples 12 to 15 and comparative example 1, and in combination with table three, it can be seen that, compared with comparative example 1, the epitaxial structures of the blue-green light chips for phototherapy prepared under the conditions of example 10 and examples 12 to 15 all have narrower half-wave width and larger light-emitting angle, higher internal quantum efficiency and better surface quality, which indicates that the epitaxial structures of the blue-green light chips for phototherapy prepared under the doping concentrations of example 10 and examples 12 to 15 all have better light-emitting effect.
As can be seen by combining example 10, example 14, and examples 16 to 20 with table iii, the half-wave width, the emission angle, and the surface quality of example 16 are not greatly changed and the internal quantum efficiency is significantly increased as compared to example 14, and the half-wave width, the emission angle, and the surface quality of example 17 are not greatly changed and the internal quantum efficiency is significantly increased as compared to example 10, which shows that the p-type AlGaN layer 134 can effectively improve the internal quantum efficiency of the blue-green chip and contribute to the enhancement of the emission power; the light emission angles of examples 18-20 were all increased compared to example 16, which shows that the ohmic contact layer 14 contributes to an increase in the light emission angle at the doping concentrations of examples 18-20.
As can be seen from a combination of example 14 and example 21, and table three, the number of fine marks with a surface length of < 5mm in the product of example 21 is significantly reduced compared to example 14, indicating that the AlN contact layer 15 contributes to reducing the occurrence of cracks in the epitaxial structure of the blue-green light chip for phototherapy.
Combining example 14 and comparative examples 2-10 and combining table three, it can be seen that the half-wave widths of comparative examples 2-10 are wider, the light-emitting angles are less than 90 °, the internal quantum efficiency is lower, and the surface quality is slightly poor, compared with example 14, which indicates that the performance of the epitaxial structure of the blue-green light chip prepared under the condition of example 14 is better.
As can be seen by combining example 14 and comparative examples 11 to 12 with table three, the comparative examples 11 to 12 have larger variation and even distortion of the test data compared to example 14, which indicates that the layer structures of the reflective DBR layer 7, the emission DBR layer 11, the first quantum well layer 9 and the second quantum well layer 132 have better improvement effect on the performance of the epitaxial structure of the fabricated blue-green optical chip in the case of example 14.
The present embodiment is only for explaining the present application, and it is not limited to the present application, and those skilled in the art can make modifications of the present embodiment without inventive contribution as needed after reading the present specification, but all of them are protected by patent law within the scope of the claims of the present application.
Claims (3)
1. The epitaxial structure of blue-green light chip for phototherapy is characterized by comprising a substrate (6), and a reflection DBR layer (7), a first n-type GaN layer (8), a first quantum well layer (9), a first p-type GaN layer (10), an emergence DBR layer (11), a tunnel junction (12) and a GaN-based LED epitaxial wafer (13) which are sequentially arranged on the substrate (6), wherein the reflection DBR layer (7) comprises 32-38 pairs of III-V group compound layers, the emergence DBR layer (11) comprises 8-12 pairs of III-V group compound layers, each pair of III-V group compound layers are sequentially stacked or sequentially stacked by a GaN layer and an AlN layer, the GaN layer is close to the substrate (6), the AlN layer or the GaAlN layer is close to the first n-type GaN layer (8), the GaN-based LED epitaxial wafer (13) comprises a second n-type GaN layer (131) and a second p-type well layer (132) and a second p-type p layer (133) which are sequentially arranged on the second n-type GaN layer (131) ) A p-type AlGaN layer (134) is arranged between the second quantum well layer (132) and the second p-type GaN layer (133), the first quantum well layer (9) and the second quantum well layer (132) both comprise 5-50 pairs of InGaN/GaN layers, each pair of InGaN/GaN layers consists of a quantum well layer InGaN and a quantum barrier layer GaN, one side of the quantum well layer InGaN is close to the substrate (6), the other side of the quantum well layer InGaN is close to the quantum barrier layer GaN, an AlN buffer layer (15) with the thickness of 100-1000nm is arranged on the substrate (6), the reflection DBR layer (7) is arranged on the AlN buffer layer (15), and the tunnel junction (12) is doped with the concentration of 1E16-1E23cm -3 The tunnel junction (12) is 10-60nm thick, the GaN/AlGaN layer structure is formed by sequentially stacking a GaN layer and an AlGaN layer, the GaN layer is close to the emergent DBR layer (11), and the AlGaN layer is close to the GaN-based LED epitaxial wafer (13).
2. The phototherapy device according to claim 1Epitaxial structure of blue-green light chip, its characterized in that: an ohmic contact layer (14) is arranged on the second p-type GaN layer (133), and the ohmic contact layer (14) has a doping concentration of 1E20-1E24cm -3 A p-type GaN layer.
3. A method of forming an epitaxial structure for a blue-green light chip for phototherapy as claimed in any one of claims 1-2, comprising the steps of:
(1) growing a reflective DBR layer (7) on a substrate (6);
(2) depositing n-type GaN on the reflecting DBR layer (7) to obtain a first n-type GaN layer (8);
(3) depositing a quantum well layer on the first n-type GaN layer (8) to obtain a first quantum well layer (9);
(4) depositing p-type GaN on the first quantum well layer (9) to obtain a first p-type GaN layer (10);
(5) growing an exit DBR layer (11) on the first p-type GaN layer (10);
(6) growing a tunnel junction (12) on the outgoing DBR layer (11);
(7) and growing a GaN-based LED epitaxial wafer (13) on the tunnel junction (12), and annealing to obtain the epitaxial structure of the blue-green light chip for phototherapy.
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