CN106602404A - Semiconductor laser and manufacturing method thereof - Google Patents
Semiconductor laser and manufacturing method thereof Download PDFInfo
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- CN106602404A CN106602404A CN201611256072.8A CN201611256072A CN106602404A CN 106602404 A CN106602404 A CN 106602404A CN 201611256072 A CN201611256072 A CN 201611256072A CN 106602404 A CN106602404 A CN 106602404A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 230000003287 optical effect Effects 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 15
- 229910002704 AlGaN Inorganic materials 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 230000003667 anti-reflective effect Effects 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000013461 design Methods 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 3
- 239000002096 quantum dot Substances 0.000 claims description 3
- 230000003628 erosive effect Effects 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 230000008878 coupling Effects 0.000 abstract description 4
- 238000010168 coupling process Methods 0.000 abstract description 4
- 238000005859 coupling reaction Methods 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000007648 laser printing Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention provides a semiconductor laser and a manufacturing method thereof. The semiconductor laser comprises an n-type substrate, an n-type first lower optical confinement layer, an n-type first waveguide layer, an n-type second lower optical confinement layer, an n-type second lower waveguide layer, a multiple quantum well active region, a p-type second upper waveguide layer, a p-type second upper optical confinement layer and a p-type contact layer which are sequentially arranged from bottom to top. According to the semiconductor laser and the manufacturing method thereof, an asymmetrical thick waveguide is arranged at a low-light-loss n-type portion, a high-reflective film is evaporated on a rear cavity surface of the laser chip, an anti-reflection film is evaporated on a front cavity surface, a Bragg reflector is formed at a second waveguide on a light outgoing front cavity surface through etching, and circularly symmetric distribution of emergent light spots at a first waveguide is realized by utilizing the coupling of the first waveguide and the second waveguide containing the multiple quantum well active region.
Description
Technical field
The present invention relates to semiconductor laser knot design field, especially a kind of semiconductor laser and its making side
Method.
Background technology
Semiconductor laser is because its small volume, and photoelectric transformation efficiency is high, can with the advantages of directly modulation optical-fibre communications,
The fields such as optical information storage, laser display obtain a wide range of applications.Semiconductor laser with the symmetrical hot spot of circle is in reality
Using particularly important.Using the semiconductor laser of the symmetrical hot spot of circle, efficiency of the laser instrument with fiber coupling, raising can be improved
The precision of the capacity, the resolution of raising laser printing and Laser Processing of optical information storage.The symmetrical semiconductor laser of circle
Hot spot can form the round hot spot of uniform luminance Jing after pinhole filter and collimation, be applied to optical information and obtain and processing system.
At present, the method for the symmetrical hot spot of semiconductor laser acquisition circle has two classes, and a class is refraction or the diffraction for utilizing light,
The far-field spot of semiconductor laser is shaped as justifying hot spot by Jing complicated optical system, and this class technology has gone through for many years
Development, there are various technical schemes, but do not form a kind of general effective technical scheme.This class post processing
Method generally existing structure is more complicated, adjustment is difficult, volume ratio semiconductor laser itself also wants big many and its price not
Quickly reduce with the time as semiconductor laser but rise year by year, limit the application of this class technology.Realization is partly led
It is vertical cavity surface emitting laser (VCSEL) that body laser justifies the another kind of method of symmetrical hot spot, but due to its chamber length, luminous
Area is little to make it be difficult to larger luminous power output, and difficulty of preparation technology is also relatively large.
The content of the invention
The purpose of the present invention, the deficiency being aiming at existing for prior art, and provide a kind of semiconductor laser and its
Manufacture method, the program arranges an asymmetrical thick waveguide in the N-shaped part of low optical loss, and in chip of laser rear facet
Evaporation high-reflecting film, front facet evaporation anti-reflective film, then etches to form Bragg reflection at the second waveguide for going out light front facet
Mirror, using the second waveguide comprising multi-quantum well active region and the coupling of first wave guide, realizes the emergent light spot at first wave guide
Circle it is symmetrical.
This programme is achieved by the following technical measures：
A kind of semiconductor laser, includes n-type substrate, first time optical confinement layer of N-shaped, the N-shaped for setting gradually from bottom to up
Waveguide in first wave conducting shell, second time optical confinement layer of N-shaped, the lower waveguide layer of N-shaped second, multi-quantum well active region, p-type second
Optical confinement layer and P type contact layer in layer, p-type second；The planar dimension of N-shaped first wave conducting shell is more than N-shaped second waveguide layer
Planar dimension；N-type substrate, first time optical confinement layer of N-shaped are identical with the planar dimension of N-shaped first wave conducting shell；Second time ripple of N-shaped
In conducting shell, multi-quantum well active region, p-type second in ducting layer, p-type second optical confinement layer and P type contact layer planar dimension
It is identical；The planar dimension of second time optical confinement layer lower surface of N-shaped is identical with the planar dimension of N-shaped first wave conducting shell；N-shaped second
The planar dimension of lower optical confinement layer upper surface is identical with the planar dimension of the lower waveguide layer of N-shaped second.
As the preferred of this programme：Highly reflecting films are coated with the rear facet of laser instrument.
As the preferred of this programme：Anti-reflective film is coated with the front facet of laser instrument.
As the preferred of this programme：From N-shaped second waveguide layer to the interval of P type contact layer near output optical zone region etch
Into Bragg grating.
A kind of manufacture method of semiconductor laser, includes following steps：
A. n-type material is used as under substrate, first time optical confinement layer, first wave conducting shell, second time optical confinement layer, second
Ducting layer；Using SQW or quantum dot as active area；Using p-type material as optics limit on ducting layer on second, second
Preparative layer, contact layer；It is installed as ridge waveguide chip of laser from bottom to up successively；
B. chip of laser rear facet is deposited with highly reflecting films；
C. chip of laser front facet is deposited with anti-reflective film；
D. etch to form Bragg mirror at the second waveguide for going out light front facet of chip of laser.
As the preferred of this programme：The design parameter requirement for preparing of layers of material in step a is：
The n-type GaN layer substrate of 2.0 μm of growth, growth temperature is 1050 DEG C, and growth pressure is 150 mbar, and growth rate is
2.5 μm/h, Si concentration is mixed for 3 × 1018/cm3；
First time optical confinement layer of N-shaped AlGaN of 900 nm is grown, Al components are 8%, and growth temperature is 1050 DEG C, growth pressure
For 150 mbar, growth rate is 1 μm/h, mixes Si concentration for 3 × 1018/ cm3；
The lower waveguide layers of N-shaped InGaN first of 1.0 μm of growth, In components are 2%, and growth temperature is 750 DEG C, and growth pressure is 400
Mbar, growth rate is 0.07 μm/h, mixes Si concentration for 1 × 1018/ cm3；
Second time optical confinement layer of AlGaN of 500 nm is grown, Al components are 2%, and growth temperature is 1050 DEG C, and growth pressure is
150 mbar, growth rate is 1 μm/h, mixes Si concentration for 2 × 1018/ cm3；
The lower waveguide layers of N-shaped InGaN second of 100 nm are grown, growth temperature is 750 DEG C, and In components are 6%, and growth pressure is 400
Mbar, growth rate is 0.07 μm/h, mixes Si concentration for 1 × 1018/ cm3；
Growth multi-quantum well active region, growth pressure is 400 mbar, and the nm of barrier layer thickness 15,850 DEG C of growth temperature, well layer is thick
Spend 2.5 nm, 730 DEG C of growth temperature, the component of well layer InGaN is 16%, 2 pairs altogether；
Ducting layer in p-type InGaN second of 100 nm is grown, growth temperature is 760 DEG C, and In components are 3%, and growth pressure is 400
Mbar, growth rate is 0.07 μm/h, mixes Mg concentration for 1 × 1017/ cm3；
Optical confinement layer on the p-type AlGaN/GaN superlattices second of 700 nm is grown, superlattice period is 5nm, and Al components are
16%, growth temperature is 950 DEG C, and growth pressure is 200 mbar, and growth rate is 1.0 μm/h, mixes Mg concentration for 3 × 1019/
cm3；
The p-type GaN contact layer of growth 20nm, growth temperature is 950 DEG C, and growth pressure is 200 mbar, and growth rate is 1.0 μ
M/h, mixes Mg concentration for 1 × 1020/ cm3.
As the preferred of this programme：In step d, Bragg mirror etching parameters are：1.3 μm of etching depth, cycle
270 nm, logarithm 5 pairs.
As the preferred of this programme：In step c and step d, front facet plating highly reflecting films reflectance is not less than 98%, back cavity
Face coating anti reflection film reflectance is not higher than 1%.
The beneficial effect of this programme can be learnt according to the narration to such scheme, due in this scenario in low optical loss
N-shaped part arranges an asymmetrical thick waveguide, and is deposited with high-reflecting film, front facet evaporation antireflection in chip of laser rear facet
Film, then etches to form Bragg mirror at the second waveguide for going out light front facet, utilizes comprising multi-quantum well active region
The coupling of second waveguide and first wave guide, realizes that the circle of emergent light spot at first wave guide is symmetrical.
As can be seen here, the present invention compared with prior art, with substantive distinguishing features and progress, its beneficial effect implemented
It is obvious.
Description of the drawings
Fig. 1 is the structural representation of the present invention.
Fig. 2 is the left view of Fig. 1.
In figure, 1 is n-type substrate, and 2 is first time optical confinement layer of N-shaped, and 3 is N-shaped first wave conducting shell, and 4 is under N-shaped second
Optical confinement layer, 5 is the lower waveguide layer of N-shaped second, and 6 is multi-quantum well active region, and 7 is ducting layer in p-type second, and 8 is p-type second
Upper optical confinement layer, 9 is P type contact layer.
Specific embodiment
All features disclosed in this specification, or disclosed all methods or during the step of, except mutually exclusive
Feature and/or step beyond, can combine by any way.
This specification（Including any accessory claim, summary and accompanying drawing）Disclosed in any feature, except non-specifically is chatted
State, can alternative features equivalent by other or with similar purpose replaced.I.e., unless specifically stated otherwise, each feature
It is an example in a series of equivalent or similar characteristics.
By accompanying drawing, it can be seen that the laser structure of this programme includes n-type substrate, the n for setting gradually from bottom to up
First time optical confinement layer of type, N-shaped first wave conducting shell, second time optical confinement layer of N-shaped, the lower waveguide layer of N-shaped second, MQW
Optical confinement layer and P type contact layer in ducting layer, p-type second in active area, p-type second；The planar dimension of N-shaped first wave conducting shell
More than the planar dimension of N-shaped second waveguide layer；The plane of n-type substrate, first time optical confinement layer of N-shaped and N-shaped first wave conducting shell
It is equivalently-sized；In the lower waveguide layer of N-shaped second, multi-quantum well active region, p-type second in ducting layer, p-type second optical confinement layer and
The planar dimension of P type contact layer is identical；The planar dimension of second time optical confinement layer lower surface of N-shaped and N-shaped first wave conducting shell
Planar dimension is identical；The planar dimension phase of the planar dimension of second time optical confinement layer upper surface of N-shaped and the lower waveguide layer of N-shaped second
Together.Highly reflecting films are coated with the rear facet of laser instrument.Anti-reflective film is coated with the front facet of laser instrument.From N-shaped second waveguide layer
To P type contact layer interval near output optical zone region etch into Bragg grating.
The manufacture method of this programme includes following steps：
A. n-type material is used as under substrate, first time optical confinement layer, first wave conducting shell, second time optical confinement layer, second
Ducting layer；Using SQW or quantum dot as active area；Using p-type material as optics limit on ducting layer on second, second
Preparative layer, contact layer；It is installed as ridge waveguide chip of laser from bottom to up successively；
B. chip of laser rear facet is deposited with highly reflecting films；
C. chip of laser front facet is deposited with anti-reflective film；
D. etch to form Bragg mirror at the second waveguide for going out light front facet of chip of laser.
The design parameter requirement for preparing of layers of material in step a is：
The n-type GaN layer substrate of 2.0 μm of growth, growth temperature is 1050 DEG C, and growth pressure is 150 mbar, and growth rate is
2.5 μm/h, Si concentration is mixed for 3 × 1018/cm3；
First time optical confinement layer of N-shaped AlGaN of 900 nm is grown, Al components are 8%, and growth temperature is 1050 DEG C, growth pressure
For 150 mbar, growth rate is 1 μm/h, mixes Si concentration for 3 × 1018/ cm3；
The lower waveguide layers of N-shaped InGaN first of 1.0 μm of growth, In components are 2%, and growth temperature is 750 DEG C, and growth pressure is 400
Mbar, growth rate is 0.07 μm/h, mixes Si concentration for 1 × 1018/ cm3；
Second time optical confinement layer of AlGaN of 500 nm is grown, Al components are 2%, and growth temperature is 1050 DEG C, and growth pressure is
150 mbar, growth rate is 1 μm/h, mixes Si concentration for 2 × 1018/ cm3；
The lower waveguide layers of N-shaped InGaN second of 100 nm are grown, growth temperature is 750 DEG C, and In components are 6%, and growth pressure is 400
Mbar, growth rate is 0.07 μm/h, mixes Si concentration for 1 × 1018/ cm3；
Growth multi-quantum well active region, growth pressure is 400 mbar, and the nm of barrier layer thickness 15,850 DEG C of growth temperature, well layer is thick
Spend 2.5 nm, 730 DEG C of growth temperature, the component of well layer InGaN is 16%, 2 pairs altogether；
Ducting layer in p-type InGaN second of 100 nm is grown, growth temperature is 760 DEG C, and In components are 3%, and growth pressure is 400
Mbar, growth rate is 0.07 μm/h, mixes Mg concentration for 1 × 1017/ cm3；
Optical confinement layer on the p-type AlGaN/GaN superlattices second of 700 nm is grown, superlattice period is 5nm, and Al components are
16%, growth temperature is 950 DEG C, and growth pressure is 200 mbar, and growth rate is 1.0 μm/h, mixes Mg concentration for 3 × 1019/
cm3；
The p-type GaN contact layer of growth 20nm, growth temperature is 950 DEG C, and growth pressure is 200 mbar, and growth rate is 1.0 μ
M/h, mixes Mg concentration for 1 × 1020/ cm3.
As the preferred of this programme：In step d, Bragg mirror etching parameters are：1.3 μm of etching depth, cycle
270 nm, logarithm 5 pairs.
In step c and step d, front facet plating highly reflecting films reflectance is not less than 98%, rear facet coating anti reflection film reflectance
Not higher than 1%.
The processing process of this programme is：
1) Top electrode makes；
2）Litho pattern；
3）Ridge is etched, 3 μm of ridge width;
4）Bragg mirror is etched, 1.3 μm of etching depth, the nm of cycle 270, logarithm 5 pairs；
5）Substrate thinning；
6）Bottom electrode makes；
7）Cleaved cavity surface, 600 μm of chamber length；
8) cavity surface film coating, front facet plating highly reflecting films reflectance is 98%, and rear facet coating anti reflection film reflectance is 1%；
9）Sliver.
The invention is not limited in aforesaid specific embodiment.The present invention is expanded to and any in this manual disclosed
New feature or any new combination, and the arbitrary new method that discloses or the step of process or any new combination.
Claims (8)
1. a kind of semiconductor laser, is characterized in that：Include n-type substrate, the first time optics of N-shaped for setting gradually from bottom to up
Limiting layer, N-shaped first wave conducting shell, second time optical confinement layer of N-shaped, the lower waveguide layer of N-shaped second, multi-quantum well active region, p-type
Optical confinement layer and P type contact layer in ducting layer, p-type second on two；The planar dimension of the N-shaped first wave conducting shell is more than N-shaped
The planar dimension of second waveguide layer；The planar dimension of the n-type substrate, first time optical confinement layer of N-shaped and N-shaped first wave conducting shell
It is identical；In the lower waveguide layer of the N-shaped second, multi-quantum well active region, p-type second in ducting layer, p-type second optical confinement layer and
The planar dimension of P type contact layer is identical；The planar dimension of second time optical confinement layer lower surface of the N-shaped and N-shaped first wave guide
The planar dimension of layer is identical；The planar dimension of second time optical confinement layer upper surface of the N-shaped is flat with the lower waveguide layer of N-shaped second
Face is equivalently-sized.
2. a kind of semiconductor laser according to claim 1, is characterized in that：High reflection is coated with the rear facet of laser instrument
Film.
3. a kind of semiconductor laser according to claim 1, is characterized in that：It is coated with the front facet of the laser instrument anti-
Reflectance coating.
4. a kind of semiconductor laser according to claim 1, is characterized in that：From N-shaped second waveguide layer to P type contact layer
Interval near output optical zone region etch into Bragg grating.
5. a kind of manufacture method of semiconductor laser, is characterized in that：Include following steps：
A. n-type material is used as under substrate, first time optical confinement layer, first wave conducting shell, second time optical confinement layer, second
Ducting layer；Using SQW or quantum dot as active area；Using p-type material as optics limit on ducting layer on second, second
Preparative layer, contact layer；It is installed as ridge waveguide chip of laser from bottom to up successively；
B. chip of laser rear facet is deposited with highly reflecting films；
C. chip of laser front facet is deposited with anti-reflective film；
D. etch to form Bragg mirror at the second waveguide for going out light front facet of chip of laser.
6. method according to claim 5, is characterized in that：Layers of material prepares design parameter requirement in step a
For：
The n-type GaN layer substrate of 2.0 μm of growth, growth temperature is 1050 DEG C, and growth pressure is 150 mbar, and growth rate is
2.5 μm/h, Si concentration is mixed for 3 × 1018/cm3；
First time optical confinement layer of N-shaped AlGaN of 900 nm is grown, Al components are 8%, and growth temperature is 1050 DEG C, growth pressure
For 150 mbar, growth rate is 1 μm/h, mixes Si concentration for 3 × 1018/ cm3；
The lower waveguide layers of N-shaped InGaN first of 1.0 μm of growth, In components are 2%, and growth temperature is 750 DEG C, and growth pressure is 400
Mbar, growth rate is 0.07 μm/h, mixes Si concentration for 1 × 1018/ cm3；
Second time optical confinement layer of AlGaN of 500 nm is grown, Al components are 2%, and growth temperature is 1050 DEG C, and growth pressure is
150 mbar, growth rate is 1 μm/h, mixes Si concentration for 2 × 1018/ cm3；
The lower waveguide layers of N-shaped InGaN second of 100 nm are grown, growth temperature is 750 DEG C, and In components are 6%, and growth pressure is 400
Mbar, growth rate is 0.07 μm/h, mixes Si concentration for 1 × 1018/ cm3；
Growth multi-quantum well active region, growth pressure is 400 mbar, and the nm of barrier layer thickness 15,850 DEG C of growth temperature, well layer is thick
Spend 2.5 nm, 730 DEG C of growth temperature, the component of well layer InGaN is 16%, 2 pairs altogether；
Ducting layer in p-type InGaN second of 100 nm is grown, growth temperature is 760 DEG C, and In components are 3%, and growth pressure is 400
Mbar, growth rate is 0.07 μm/h, mixes Mg concentration for 1 × 1017/ cm3；
Optical confinement layer on the p-type AlGaN/GaN superlattices second of 700 nm is grown, superlattice period is 5nm, and Al components are
16%, growth temperature is 950 DEG C, and growth pressure is 200 mbar, and growth rate is 1.0 μm/h, mixes Mg concentration for 3 × 1019/
cm3；
The p-type GaN contact layer of growth 20nm, growth temperature is 950 DEG C, and growth pressure is 200 mbar, and growth rate is 1.0 μ
M/h, mixes Mg concentration for 1 × 1020/ cm3.
7. method according to claim 5, is characterized in that：In step d, Bragg mirror etching parameters are：Carve
1.3 μm of depth of erosion, the nm of cycle 270, logarithm 5 pairs.
8. method according to claim 5, is characterized in that：In step c and step d, front facet plating highly reflecting films are anti-
The rate of penetrating is not less than 98%, and rear facet coating anti reflection film reflectance is not higher than 1%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201611256072.8A CN106602404A (en) | 2016-12-30 | 2016-12-30 | Semiconductor laser and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201611256072.8A CN106602404A (en) | 2016-12-30 | 2016-12-30 | Semiconductor laser and manufacturing method thereof |
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Family
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108767659A (en) * | 2018-06-04 | 2018-11-06 | 清华大学 | A method of utilizing two-dimensional material interlayer epitaxial growth laser |
| WO2020140701A1 (en) * | 2019-01-04 | 2020-07-09 | 深圳市中光工业技术研究院 | Epitaxial wafer and semiconductor laser |
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