CN103500780B - A kind of extension of gallium nitride-based LED structure and preparation method thereof - Google Patents
A kind of extension of gallium nitride-based LED structure and preparation method thereof Download PDFInfo
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- CN103500780B CN103500780B CN201310453881.8A CN201310453881A CN103500780B CN 103500780 B CN103500780 B CN 103500780B CN 201310453881 A CN201310453881 A CN 201310453881A CN 103500780 B CN103500780 B CN 103500780B
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 112
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title abstract description 15
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 32
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 21
- 239000010980 sapphire Substances 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 230000004888 barrier function Effects 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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Abstract
The present invention relates to GaN base LED epitaxial structure, specifically a kind of extension of gallium nitride-based LED structure and preparation method thereof.The invention solves the problem that existing GaN base LED epitaxial structure luminous efficiency is lower, photoelectric properties are poor and yield is lower.A kind of extension of gallium nitride-based LED structure comprises Sapphire Substrate, low temperature GaN buffer, layer of undoped gan, N-shaped doped gan layer, superlattice layer, multiple quantum well light emitting layer, p-type AlGaN layer, p-type GaN contact layer; Wherein, low temperature GaN buffer is grown on the upper surface of Sapphire Substrate; Layer of undoped gan is grown on the upper surface of low temperature GaN buffer; N-shaped doped gan layer is grown on the upper surface of layer of undoped gan; Superlattice layer is grown on the upper surface of N-shaped doped gan layer; Multiple quantum well light emitting layer growth is in the upper surface of superlattice layer.The present invention is applicable to manufacture light emitting semiconductor device.
Description
Technical field
The present invention relates to GaN base LED epitaxial structure, specifically a kind of extension of gallium nitride-based LED structure and preparation method thereof.
Background technology
GaN base LED epitaxial structure is widely used in manufacturing various light emitting semiconductor device.As the core of light emitting semiconductor device, the performance of GaN base LED epitaxial structure is directly connected to the performance of light emitting semiconductor device.Under prior art conditions, GaN base LED epitaxial structure all adopts MOCVD(MetalOrganicChemicalVaporDeposition, metallo-organic compound chemical gaseous phase deposition) method is prepared from.But practice shows, the lattice mismatch between the low temperature GaN buffer of existing GaN base LED epitaxial structure and Sapphire Substrate is higher (usually up to 16%), causes the dislocation density of low temperature GaN buffer (to be generally 10 comparatively greatly
8-10
10), electronics is caused on the one hand to be subject to constraint (namely cause the current expansion ability of low temperature GaN buffer poor) at low temperature GaN buffer thus, and then cause the luminous efficiency of GaN base LED epitaxial structure lower, cause on the other hand that the angularity of low temperature GaN buffer is comparatively large, internal stress is comparatively large, crystalline quality is poor, and then cause the leakage current of GaN base LED epitaxial structure and forward voltage comparatively large, finally cause that the photoelectric properties of GaN base LED epitaxial structure are poor, yield is lower.Based on this, be necessary to invent a kind of brand-new GaN base LED epitaxial structure, to solve the problem that existing GaN base LED epitaxial structure luminous efficiency is lower, photoelectric properties are poor and yield is lower.
Summary of the invention
The present invention, in order to solve the problem that existing GaN base LED epitaxial structure luminous efficiency is lower, photoelectric properties are poor and yield is lower, provides a kind of extension of gallium nitride-based LED structure and preparation method thereof.
The present invention adopts following technical scheme to realize: a kind of extension of gallium nitride-based LED structure, comprises Sapphire Substrate, low temperature GaN buffer, layer of undoped gan, N-shaped doped gan layer, superlattice layer, multiple quantum well light emitting layer, p-type AlGaN layer, p-type GaN contact layer; Wherein, low temperature GaN buffer is grown on the upper surface of Sapphire Substrate; Layer of undoped gan is grown on the upper surface of low temperature GaN buffer; N-shaped doped gan layer is grown on the upper surface of layer of undoped gan; Superlattice layer is grown on the upper surface of N-shaped doped gan layer; Multiple quantum well light emitting layer growth is in the upper surface of superlattice layer; P-type AlGaN layer is grown on the upper surface of multiple quantum well light emitting layer; P-type GaN contact layer is grown on the upper surface of p-type AlGaN layer.
A kind of preparation method's (the method is for the preparation of a kind of extension of gallium nitride-based LED structure of the present invention) of extension of gallium nitride-based LED structure, the method adopts following steps to realize:
(1) Sapphire Substrate is chosen; At H
2atmosphere at high temperature purges Sapphire Substrate;
(2) at the upper surface growing low temperature GaN resilient coating of Sapphire Substrate;
(3) in the upper surface growth layer of undoped gan of low temperature GaN buffer;
(4) in the upper surface growing n-type doped gan layer of layer of undoped gan;
(5) at the upper surface growth superlattice layer of N-shaped doped gan layer;
(6) at the upper surface growth multiple quantum well light emitting layer of superlattice layer;
(7) in the upper surface growth p-type AlGaN layer of multiple quantum well light emitting layer;
(8) at the upper surface growth p-type GaN contact layer of p-type AlGaN layer.
Compared with existing GaN base LED epitaxial structure, a kind of extension of gallium nitride-based LED structure of the present invention and preparation method thereof is by growth superlattice layer, possesses following advantage: superlattice layer effectively reduces the lattice mismatch between low temperature GaN buffer and Sapphire Substrate, effectively reduce the dislocation density of low temperature GaN buffer, effectively improve the transverse movement (namely effectively enhance the current expansion ability of N-shaped doped gan layer) of electronics in N-shaped doped gan layer on the one hand thus, and then effectively improve the luminous efficiency of GaN base LED epitaxial structure, effectively reduce angularity and the internal stress of low temperature GaN buffer on the other hand, effectively improve the crystalline quality of low temperature GaN buffer, and then effectively reduce leakage current and the forward voltage of GaN base LED epitaxial structure, finally effectively improve the photoelectric properties of GaN base LED epitaxial structure, effectively improve the yield of GaN base LED epitaxial structure.In sum, a kind of extension of gallium nitride-based LED structure of the present invention and preparation method thereof, by growth superlattice layer, efficiently solves the problem that existing GaN base LED epitaxial structure luminous efficiency is lower, photoelectric properties are poor and yield is lower.
The present invention efficiently solves the problem that existing GaN base LED epitaxial structure luminous efficiency is lower, photoelectric properties are poor and yield is lower, is applicable to manufacture light emitting semiconductor device.
Accompanying drawing explanation
Fig. 1 is the first structural representation of a kind of extension of gallium nitride-based LED structure of the present invention.
Fig. 2 is the second structural representation of a kind of extension of gallium nitride-based LED structure of the present invention.
Embodiment
embodiment one
A kind of extension of gallium nitride-based LED structure, comprises Sapphire Substrate, low temperature GaN buffer, layer of undoped gan, N-shaped doped gan layer, superlattice layer, multiple quantum well light emitting layer, p-type AlGaN layer, p-type GaN contact layer; Wherein, low temperature GaN buffer is grown on the upper surface of Sapphire Substrate; Layer of undoped gan is grown on the upper surface of low temperature GaN buffer; N-shaped doped gan layer is grown on the upper surface of layer of undoped gan; Superlattice layer is grown on the upper surface of N-shaped doped gan layer; Multiple quantum well light emitting layer growth is in the upper surface of superlattice layer; P-type AlGaN layer is grown on the upper surface of multiple quantum well light emitting layer; P-type GaN contact layer is grown on the upper surface of p-type AlGaN layer.
In the present embodiment, as shown in Figure 1, described superlattice layer comprises the N-shaped superlattice layer of AlGaN/GaN loop cycle and the superlattice layer of InGaN/GaN loop cycle; The N-shaped superlattice layer of AlGaN/GaN loop cycle is grown on the upper surface of N-shaped doped gan layer; The superlattice layer of InGaN/GaN loop cycle is grown on the upper surface of the N-shaped superlattice layer of AlGaN/GaN loop cycle; Multiple quantum well light emitting layer growth is in the upper surface of the superlattice layer of InGaN/GaN loop cycle.
The cycle of the N-shaped superlattice layer of described AlGaN/GaN loop cycle is 1-5; The cycle of the superlattice layer of described InGaN/GaN loop cycle is 5-10.
The thickness of the N-shaped superlattice layer of described AlGaN/GaN loop cycle is 2-10 μm; The thickness of the superlattice layer of described InGaN/GaN loop cycle is 130-150 μm.
Described multiple quantum well light emitting layer is formed by InGaN potential well layer and GaN barrier layer periodicity alternating growth, and periodicity is 10-12; The thickness of described multiple quantum well light emitting layer is 130-160nm.
A kind of preparation method's (the method is for the preparation of a kind of extension of gallium nitride-based LED structure of the present invention) of extension of gallium nitride-based LED structure, the method adopts following steps to realize:
(1) Sapphire Substrate is chosen; At H
2atmosphere at high temperature purges Sapphire Substrate;
(2) at the upper surface growing low temperature GaN resilient coating of Sapphire Substrate;
(3) in the upper surface growth layer of undoped gan of low temperature GaN buffer;
(4) in the upper surface growing n-type doped gan layer of layer of undoped gan;
(5) at the upper surface growth superlattice layer of N-shaped doped gan layer;
(6) at the upper surface growth multiple quantum well light emitting layer of superlattice layer;
(7) in the upper surface growth p-type AlGaN layer of multiple quantum well light emitting layer;
(8) at the upper surface growth p-type GaN contact layer of p-type AlGaN layer.
During concrete enforcement, the preparation method of a kind of extension of gallium nitride-based LED structure of the present invention is realized by MOCVD device.
embodiment two
A kind of extension of gallium nitride-based LED structure, comprises Sapphire Substrate, low temperature GaN buffer, layer of undoped gan, N-shaped doped gan layer, superlattice layer, multiple quantum well light emitting layer, p-type AlGaN layer, p-type GaN contact layer; Wherein, low temperature GaN buffer is grown on the upper surface of Sapphire Substrate; Layer of undoped gan is grown on the upper surface of low temperature GaN buffer; N-shaped doped gan layer is grown on the upper surface of layer of undoped gan; Superlattice layer is grown on the upper surface of N-shaped doped gan layer; Multiple quantum well light emitting layer growth is in the upper surface of superlattice layer; P-type AlGaN layer is grown on the upper surface of multiple quantum well light emitting layer; P-type GaN contact layer is grown on the upper surface of p-type AlGaN layer.
In the present embodiment, as shown in Figure 2, described superlattice layer comprises the compound superlattice layer of AlGaN/InGaN loop cycle; The compound superlattice layer of AlGaN/InGaN loop cycle is grown on the upper surface of N-shaped doped gan layer; Multiple quantum well light emitting layer growth is in the upper surface of the compound superlattice layer of AlGaN/InGaN loop cycle.
Described multiple quantum well light emitting layer is formed by InGaN potential well layer and GaN barrier layer periodicity alternating growth, and periodicity is 10-12; The thickness of described multiple quantum well light emitting layer is 130-160nm.
A kind of preparation method's (the method is for the preparation of a kind of extension of gallium nitride-based LED structure of the present invention) of extension of gallium nitride-based LED structure, the method adopts following steps to realize:
(1) Sapphire Substrate is chosen; At H
2atmosphere at high temperature purges Sapphire Substrate;
(2) at the upper surface growing low temperature GaN resilient coating of Sapphire Substrate;
(3) in the upper surface growth layer of undoped gan of low temperature GaN buffer;
(4) in the upper surface growing n-type doped gan layer of layer of undoped gan;
(5) at the upper surface growth superlattice layer of N-shaped doped gan layer;
(6) at the upper surface growth multiple quantum well light emitting layer of superlattice layer;
(7) in the upper surface growth p-type AlGaN layer of multiple quantum well light emitting layer;
(8) at the upper surface growth p-type GaN contact layer of p-type AlGaN layer.
During concrete enforcement, the preparation method of a kind of extension of gallium nitride-based LED structure of the present invention is realized by MOCVD device.
Claims (5)
1. an extension of gallium nitride-based LED structure, is characterized in that: comprise Sapphire Substrate, low temperature GaN buffer, layer of undoped gan, N-shaped doped gan layer, superlattice layer, multiple quantum well light emitting layer, p-type AlGaN layer, p-type GaN contact layer; Wherein, low temperature GaN buffer is grown on the upper surface of Sapphire Substrate; Layer of undoped gan is grown on the upper surface of low temperature GaN buffer; N-shaped doped gan layer is grown on the upper surface of layer of undoped gan; Superlattice layer is grown on the upper surface of N-shaped doped gan layer; Multiple quantum well light emitting layer growth is in the upper surface of superlattice layer; P-type AlGaN layer is grown on the upper surface of multiple quantum well light emitting layer; P-type GaN contact layer is grown on the upper surface of p-type AlGaN layer;
Described superlattice layer comprises the N-shaped superlattice layer of AlGaN/GaN loop cycle and the superlattice layer of InGaN/GaN loop cycle; The N-shaped superlattice layer of AlGaN/GaN loop cycle is grown on the upper surface of N-shaped doped gan layer; The superlattice layer of InGaN/GaN loop cycle is grown on the upper surface of the N-shaped superlattice layer of AlGaN/GaN loop cycle; Multiple quantum well light emitting layer growth is in the upper surface of the superlattice layer of InGaN/GaN loop cycle.
2. a kind of extension of gallium nitride-based LED structure according to claim 1, is characterized in that: the cycle of the N-shaped superlattice layer of described AlGaN/GaN loop cycle is 1-5; The cycle of the superlattice layer of described InGaN/GaN loop cycle is 5-10.
3. a kind of extension of gallium nitride-based LED structure according to claim 1 and 2, is characterized in that: the thickness of the N-shaped superlattice layer of described AlGaN/GaN loop cycle is 2-10 μm; The thickness of the superlattice layer of described InGaN/GaN loop cycle is 130-150 μm.
4. a kind of extension of gallium nitride-based LED structure according to claim 1 and 2, is characterized in that: described multiple quantum well light emitting layer is formed by InGaN potential well layer and GaN barrier layer periodicity alternating growth, and periodicity is 10-12; The thickness of described multiple quantum well light emitting layer is 130-160nm.
5. a kind of extension of gallium nitride-based LED structure according to claim 3, is characterized in that: described multiple quantum well light emitting layer is formed by InGaN potential well layer and GaN barrier layer periodicity alternating growth, and periodicity is 10-12; The thickness of described multiple quantum well light emitting layer is 130-160nm.
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| CN103824909B (en) * | 2014-03-12 | 2016-09-14 | 合肥彩虹蓝光科技有限公司 | A kind of epitaxy method improving GaN base LED luminosity |
| CN104157761B (en) * | 2014-08-30 | 2017-02-15 | 太原理工大学 | GaN-based light-emitting diode structure improving light extraction rate and preparation method |
| CN104576853B (en) * | 2015-02-03 | 2017-10-13 | 合肥彩虹蓝光科技有限公司 | It is a kind of to improve the epitaxy method of GaN base LED chip current expansion |
| CN104638074B (en) * | 2015-02-04 | 2017-12-08 | 映瑞光电科技(上海)有限公司 | High brightness GaN base LED epitaxial structures and preparation method thereof |
| CN105514234A (en) * | 2015-12-14 | 2016-04-20 | 安徽三安光电有限公司 | Nitride light emitting diode and growth method thereof |
| CN105633223B (en) * | 2015-12-31 | 2018-10-09 | 华灿光电(苏州）有限公司 | Semiconductor devices in AlGaN templates, the preparation method of AlGaN templates and AlGaN templates |
| CN105789396B (en) * | 2016-04-28 | 2018-09-04 | 厦门乾照光电股份有限公司 | A kind of large scale LED epitaxial slice production method being not susceptible to warpage |
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| CN106505076B (en) * | 2016-11-09 | 2018-07-31 | 太原理工大学 | Micrometre array LED preparation methods |
| CN106340572B (en) * | 2016-11-23 | 2018-07-13 | 映瑞光电科技(上海)有限公司 | Light emitting diode and forming method thereof |
| CN106910802B (en) * | 2017-03-21 | 2023-12-29 | 广东工业大学 | Epitaxial structure for realizing short-wavelength ultraviolet LED |
| CN108598233A (en) * | 2018-04-18 | 2018-09-28 | 湘能华磊光电股份有限公司 | A kind of LED outer layer growths method |
| CN109509815B (en) * | 2018-11-22 | 2021-04-27 | 华灿光电（浙江）有限公司 | Epitaxial wafer of light emitting diode and preparation method thereof |
| CN113270525A (en) * | 2021-04-30 | 2021-08-17 | 广东德力光电有限公司 | Preparation method of green light epitaxial structure |
| CN114464709B (en) * | 2022-04-13 | 2023-03-03 | 江西兆驰半导体有限公司 | LED epitaxial wafer, epitaxial growth method and LED chip |
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| CN101685844A (en) * | 2008-09-27 | 2010-03-31 | 中国科学院物理研究所 | GaN-based Single chip white light emitting diode epitaxial material |
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| JP2013524535A (en) * | 2010-04-05 | 2013-06-17 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Aluminum Gallium Nitride Barrier and Separate Confinement Heterostructure (SCH) Layer for Semipolar Plane Group III Nitride Semiconductor-Based Light Emitting Diodes and Laser Diodes |
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| CN101685844A (en) * | 2008-09-27 | 2010-03-31 | 中国科学院物理研究所 | GaN-based Single chip white light emitting diode epitaxial material |
| CN101572288A (en) * | 2009-05-27 | 2009-11-04 | 厦门大学 | GaN-based multi-quantum well super light-emitting diode (SLED) and preparation method thereof |
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