CN106129196A - A kind of epitaxial wafer for flip LED chips and preparation method thereof - Google Patents
A kind of epitaxial wafer for flip LED chips and preparation method thereof Download PDFInfo
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- CN106129196A CN106129196A CN201610752826.2A CN201610752826A CN106129196A CN 106129196 A CN106129196 A CN 106129196A CN 201610752826 A CN201610752826 A CN 201610752826A CN 106129196 A CN106129196 A CN 106129196A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
Abstract
A kind of epitaxial wafer for flip LED chips and preparation method thereof, belongs to the epitaxy technology field of light emitting diode, the cycle alternate epitaxial growth n (Al when growing n-type superlattice layerxGa1‑x)0.5In0.5P potential well layer and n (AlyGa1‑y)0.5In0.5P barrier layer, the cycle alternate epitaxial growth p (Al when growing p-type superlattice layerxGa1‑x)0.5In0.5P potential well layer and p (AlyGa1‑y)0.5In0.5P barrier layer.Processing technology of the present invention is simple, reasonable, and N-shaped superlattice layer can be effectively improved electronics at n (AlxGa1‑x)0.5In0.5The transverse movement of P current extending, and then it is effectively increased the luminous efficiency of AlGaInP epitaxial structure.The product using the present invention to prepare can effectively promote AlGaInP base flip LED epitaxial structure luminous efficiency, photoelectric properties and yield.
Description
Technical field
The invention belongs to the epitaxy technology field of light emitting diode, the extension of a kind of LED chip for upside-down mounting
The technology of preparing of sheet.
Background technology
In recent years, high brightness quaternary system AlGaInP LED has that power consumption is low, luminous efficiency is high, life-span length, volume
The features such as little, low cost, therefore have a wide range of applications in illumination and optical fiber telecommunications system.Quaternary system (AlxGa1-x)0.5In0.5P material system can mate with GaAs substrate lattice and with the change of Al component, direct band gap can change to from 1.9cV
2.3cv, wavelength is from 560nm to 650nm, and then can realize from green to emitting red light.Based on quaternary system (AlxGa1-x)0.5In0.5The lifting of the luminous efficiency of the LED of P material system, has multiple method.Inverted structure is used to be greatly enhanced
LED luminance, but, in upside-down mounting epitaxial structure, the quality of the current expansion ability in n face and p face can extreme influence LED epitaxial structure
Luminous efficiency and yield.
Based on this, it is necessary to use a kind of brand-new current expansion method, promote outside existing AlGaInP base flip LED
Prolong structure light-emitting efficiency, photoelectric properties and yield.
Summary of the invention
The present invention seeks to propose one can promote AlGaInP base flip LED epitaxial structure luminous efficiency, photoelectric properties,
And the epitaxial wafer of the LED chip of yield.
The present invention arranges n-GaAs cushion, n-(Al in the same side of substratexGa1-x)0.5In0.5P etch stop layers, n-
GaAs contact layer, n-(AlxGa1-x)0.5In0.5P roughened layer, n-(AlxGa1-x)0.5In0.5P current extending, N-shaped superlattice layer,
N-InAlP limiting layer, active layer, p-InAlP limiting layer, p-type superlattice layer and p-GaP Window layer, described N-shaped superlattice layer by
Potential well layer that cycle is arranged alternately and barrier layer composition, potential well layer that described p-type superlattice layer was arranged alternately by the cycle and potential barrier
Layer composition.
The present invention arranges N-shaped superlattices interposed layer between current extending and n-AlInP limiting layer, limits at p-AlInP
P-type superlattices interposed layer is set between preparative layer and p-GaP Window layer, promotes the current expansion ability in n face and p face, improve existing
AlGaInP base flip LED epitaxial structure luminous efficiency, photoelectric properties and yield.
The invention have the advantage that the migration of carrier can be played certain cushioning effect by p-type superlattice layer, potential well layer will
Produce and fetter a large amount of hole, form Two-Dimensional Hole high-density state；Barrier layer can hinder the escape in hole, improves laterally dividing of hole
Cloth, stops that electronics is excessive, increases the injection efficiency in hole, improve electronics and the recombination probability in hole, improve device brightness, this
Outward, self there is certain tunnel-effect in p-type superlattice layer, thus is not result in the significantly raised of forward voltage, meanwhile, and p-type
The multiple structure of superlattices can reduce the lattice mismatch between p-AlInP limiting layer and P-GaP Window layer, effectively reduces
The dislocation density of P-GaP Window layer.
Equally, N-shaped superlattice layer can be effectively improved electronics at n-(AlxGa1-x)0.5In0.5The horizontal fortune of P current extending
Move and (the most effectively enhance n-(AlxGa1-x)0.5In0.5The current expansion ability of P current extending), and then be effectively increased
The luminous efficiency of AlGaInP epitaxial structure.
In sum, product of the present invention can effectively promote AlGaInP base flip LED epitaxial structure luminous efficiency, photo electric
Energy and yield.
Further, the potential well layer of N-shaped superlattice layer of the present invention and the alternate cycle number of barrier layer are 3～15, single
The gross thickness of individual periodic potential well layer and barrier layer is 5nm～20nm.This setting can use the disposable epitaxial growth of MOCVD, technique
Simply, and ideal effect can be obtained, the number of plies also can be avoided simultaneously too much to increase production cost.
The potential well layer of described p-type superlattice layer and the alternate cycle number of barrier layer are 3～15, single periodic potential well layer and gesture
The gross thickness of barrier layer is 5nm～20nm.This setting can use the disposable epitaxial growth of MOCVD, and technique is simple, and can obtain more
Preferably effect, also can avoid the number of plies too much to increase production cost simultaneously.
The present invention another object is that the preparation method proposing above epitaxial wafer.
Preparation method of the present invention is: epitaxial growth n-GaAs cushion, n-(Al successively in the same side of substratexGa1-x)0.5In0.5P etch stop layers, n-GaAs contact layer, n-(AlxGa1-x)0.5In0.5P roughened layer, n-(AlxGa1-x)0.5In0.5P electric current
Extension layer, N-shaped superlattice layer, n-InAlP limiting layer, active layer, p-InAlP limiting layer, p-type superlattice layer and p-GaP window
Layer.Feature of the present invention is: the cycle alternate epitaxial growth n-(Al when growing described N-shaped superlattice layerxGa1-x)0.5In0.5P potential well
Layer and n-(AlyGa1-y)0.5In0.5P barrier layer, the cycle alternate epitaxial growth p-when growing described p-type superlattice layer
(AlxGa1-x)0.5In0.5P potential well layer and p-(AlyGa1-y)0.5In0.5P barrier layer；Further, at the material for growing n-type superlattices
Described n-(Al in the material of material and p-type superlatticesxGa1-x)0.5In0.5P、n-(AlyGa1-y)0.5In0.5P、p-(AlxGa1-x)0.5In0.5P and p-(AlyGa1-y)0.5In0.5In P, 0.4 ＜ x ＜ 1,0.4 ＜ y≤1, and x ＜ y.
Processing technology of the present invention is simple, reasonable, and N-shaped superlattice layer can be effectively improved electronics at n-(AlxGa1-x)0.5In0.5The transverse movement of P current extending (the most effectively enhances n-(AlxGa1-x)0.5In0.5The electric current of P current extending expands
Exhibition ability), and then it is effectively increased the luminous efficiency of AlGaInP epitaxial structure.The product using the present invention to prepare can be effective
Promote AlGaInP base flip LED epitaxial structure luminous efficiency, photoelectric properties and yield.
The photon energy that effective energy gap of superlattice layer is launched more than active area, the light not sent active area is inhaled
Receive, and (Al in superlattice layerxGa1-x)0.5In0.5In P layer, Al component is less than (AlyGa1-y)0.5In0.5Al component in P layer, therefore institute
State (AlyGa1-y)0.5In0.5The energy gap of P layer is more than (AlxGa1-x)0.5In0.5The energy gap of P layer, described superlattice structure
Certain cushioning effect exists for carrier mobility, simultaneously carrier again can effective tunnelling, therefore super brilliant for N-shaped
Lattice, can cause electric current to redistribute inside current extending and the contact surface of n superlattices interposed layer and n superlattices interposed layer,
For p-type superlattices, electric current can be caused heavy inside P-GaP layer with the contact surface of p superlattices interposed layer and p superlattices interposed layer
New distributing, prevents electric current from blocking up；It is additionally, since interposed layer itself and there is certain tunneling effect, thus without causing forward electricity
That presses is significantly raised；Simultaneously as electric current is played the effect of buffering by superlattice layer, and add the ESD performance of device.Cause
This, the present invention described n-(Al in the material of growing n-type superlattices and the material of p-type superlatticesxGa1-x)0.5In0.5P、
n-(AlyGa1-y)0.5In0.5P、p-(AlxGa1-x)0.5In0.5P and p-(AlyGa1-y)0.5In0.5In P, 0.4 ＜ x ＜ 1,0.4 ＜ y≤
1, and x ＜ y.
It addition, the single Periodic Superlattice thickness of N-shaped superlattice layer of the present invention is 5nm～20nm, described N-shaped is super brilliant
In compartment, the alternate cycle number of potential well layer and barrier layer is 3～15, when growing n-type superlattice layer, uses Si2H6As doping
Source.MOCVD grows AlGaInP material, uses Si2H6High electron concentration, and Si can be reached as doped source2H6To growth
Temperature-insensitive, easily controllable in technique.
The single Periodic Superlattice thickness of described p-type superlattice layer is 5nm～20nm, potential well in described p-type superlattice layer
The alternate cycle number of layer and barrier layer is 3～15, when growing p-type superlattice layer, uses Cp2Mg is as doped source.Use
Cp2Mg is as doped source, and Mg has less ionization energy in AlGaInP, and its volatility and diffusion coefficient less, to growth temperature
The dependence of degree is less, can reach higher hole concentration, easily controllable in technique grows.
Accompanying drawing explanation
Fig. 1 is a kind of structural representation of the present invention.
Fig. 2 is a kind of structural representation of N-shaped superlattice layer in the present invention.
Fig. 3 is a kind of structural representation of p-type superlattice layer in the present invention.
Detailed description of the invention
One, preparation technology:
As it is shown in figure 1, use metal organic chemical vapor deposition (MOCVD) method, on n-GaAs substrate 1 from the bottom to top outside
Epitaxial growth n-GaAs cushion 2, n-(AlxGa1-x)0.5In0.5P etch stop layers 3, n-GaAs contact layer 4, n-(AlxGa1-x)0.5In0.5P roughened layer 5, n-(AlxGa1-x)0.5In0.5P current extending 6, N-shaped superlattice layer 7, n-InAlP limiting layer 8, active
Layer 9, p-InAlP limiting layer 10, p-type superlattice layer 11, p-GaP Window layer.
Wherein, N-shaped superlattice layer 7 is by n-(AlxGa1-x)0.5In0.5P potential well layer and n-(AlyGa1-y)0.5In0.5P barrier layer
Cycle alternating growth is formed, 0.4 ＜ x ＜ 1,0.4 ＜ y≤1, and x ＜ y.In N-shaped superlattice layer potential well layer and barrier layer alternately
Periodicity is 3～15, when growing n-type superlattice layer, uses Si2H6As doped source.The single cycle of N-shaped superlattice layer surpasses
The thickness of lattice is 5nm～20nm.
P-type superlattice layer 11 is by p-(AlxGa1-x)0.5In0.5P potential well layer and p-(AlyGa1-y)0.5In0.5The P barrier layer cycle
Alternating growth is formed, 0.4 ＜ x ＜ 1,0.4 ＜ y≤1, and x ＜ y.Potential well layer and the alternate cycle of barrier layer in p-type superlattice layer
Number is 3～15, when growing p-type superlattice layer, uses Cp2Mg is as doped source.The single Periodic Superlattice of p-type superlattice layer
Thickness be 5nm～20nm.
When making p-GaP Window layer, using Mg as doped chemical, successively make and form p-GaP thick-layer 12 and p-GaP table
Layer 13.
Two, product structure feature:
As it is shown in figure 1, have n-GaAs cushion 2, n-(Al in the same side of n-GaAs substrate 1 successively epitaxial growthxGa1-x)0.5In0.5P etch stop layers 3, n-GaAs contact layer 4, n-(AlxGa1-x)0.5In0.5P roughened layer 5, n-(AlxGa1-x)0.5In0.5P
Current extending 6, N-shaped superlattice layer 7, n-InAlP limiting layer 8, active layer 9, p-InAlP limiting layer 10, p-type superlattice layer 11
With the p-GaP Window layer being made up of p-GaP thick-layer 12 and p-GaP top layer 13.
As in figure 2 it is shown, the potential well layer 7-1 that is arranged alternately by the cycle of N-shaped superlattice layer and barrier layer 7-2 forms.
Shown in Fig. 3, potential well layer 11-1 and barrier layer 11-2 that p-type superlattice layer was arranged alternately by the cycle form.
Claims (8)
1., for an epitaxial wafer for flip LED chips, set gradually n-GaAs cushion, n-in the same side of substrate
(AlxGa1-x)0.5In0.5P etch stop layers, n-GaAs contact layer, n-(AlxGa1-x)0.5In0.5P roughened layer, n-(AlxGa1-x)0.5In0.5P current extending, N-shaped superlattice layer, n-InAlP limiting layer, active layer, p-InAlP limiting layer, p-type superlattice layer
With p-GaP Window layer, it is characterised in that: potential well layer and barrier layer that described N-shaped superlattice layer was arranged alternately by the cycle form, institute
State potential well layer and barrier layer that p-type superlattice layer is arranged alternately by the cycle to form.
The most according to claim 1 for the epitaxial wafer of flip LED chips, it is characterised in that: in described N-shaped superlattice layer,
Single cycle n-(AlxGa1-x)0.5In0.5P potential well layer and n-(AlyGa1-y)0.5In0.5The gross thickness of P barrier layer is 5nm～20nm.
Epitaxial wafer for flip LED chips the most according to claim 1 or claim 2, it is characterised in that: described N-shaped superlattice layer
Middle n-(AlxGa1-x)0.5In0.5P potential well layer and n-(AlyGa1-y)0.5In0.5The alternate cycle number of P barrier layer is 3～15.
The most according to claim 1 for the epitaxial wafer of flip LED chips, it is characterised in that: in described p-type superlattice layer,
Single period p-(AlxGa1-x)0.5In0.5P potential well layer and p-(AlyGa1-y)0.5In0.5The gross thickness of P barrier layer is 5nm～20nm.
5. according to the epitaxial wafer being used for flip LED chips described in claim 1 or 4, it is characterised in that: described p-type superlattice layer
Middle p-(AlxGa1-x)0.5In0.5P potential well layer and p-(AlyGa1-y)0.5In0.5The alternate cycle number of P barrier layer is 3～15.
A kind of preparation method of the epitaxial wafer for flip LED chips, in the same side of substrate successively
Epitaxial growth n-GaAs cushion, n-(AlxGa1-x)0.5In0.5P etch stop layers, n-GaAs contact layer, n-(AlxGa1-x)0.5In0.5P roughened layer, n-(AlxGa1-x)0.5In0.5P current extending, N-shaped superlattice layer, n-InAlP limiting layer, active layer,
P-InAlP limiting layer, p-type superlattice layer and p-GaP Window layer；It is characterized in that: the cycle when growing described N-shaped superlattice layer
Alternate epitaxial growth n-(AlxGa1-x)0.5In0.5P potential well layer and n-(AlyGa1-y)0.5In0.5P barrier layer, surpasses growing described p-type
Cycle alternate epitaxial growth p-(Al during lattice layerxGa1-x)0.5In0.5P potential well layer and p-(AlyGa1-y)0.5In0.5P barrier layer；And
And, at the described n-(Al in the material of growing n-type superlattices and the material of p-type superlatticesxGa1-x)0.5In0.5P、n-
(AlyGa1-y)0.5In0.5P、p-(AlxGa1-x)0.5In0.5P and p-(AlyGa1-y)0.5In0.5In P, 0.4 ＜ x ＜ 1,0.4 ＜ y≤1,
And x ＜ y.
Preparation method the most according to claim 6, it is characterised in that: in described N-shaped superlattice layer, single cycle growth
n-(AlxGa1-x)0.5In0.5P potential well layer and n-(AlyGa1-y)0.5In0.5The gross thickness of P barrier layer is 5nm～20nm, described N-shaped
In superlattice layer, the alternate cycle number of potential well layer and barrier layer is 3～15, when growing n-type superlattice layer, uses Si2H6As
Doped source.
Preparation method the most according to claim 6, it is characterised in that: in described p-type superlattice layer, single cycle growth
p-(AlxGa1-x)0.5In0.5P potential well layer and p-(AlyGa1-y)0.5In0.5The gross thickness of P barrier layer is 5nm～20nm, described p-type
In superlattice layer, the alternate cycle number of potential well layer and barrier layer is 3～15, when growing p-type superlattice layer, uses Cp2Mg conduct
Doped source.
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Cited By (7)
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| CN110379898A (en) * | 2019-05-22 | 2019-10-25 | 华灿光电(苏州）有限公司 | LED epitaxial slice and its growing method |
| WO2021013740A1 (en) * | 2019-07-24 | 2021-01-28 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor chip |
| CN112968088A (en) * | 2021-03-10 | 2021-06-15 | 扬州乾照光电有限公司 | Flip infrared light emitting diode and preparation method thereof |
| CN113871520A (en) * | 2021-09-15 | 2021-12-31 | 天津三安光电有限公司 | Semiconductor light-emitting element and manufacturing method thereof |
| CN114038967A (en) * | 2021-07-27 | 2022-02-11 | 重庆康佳光电技术研究院有限公司 | LED epitaxial structure, manufacturing method thereof and LED device |
| CN114497300A (en) * | 2022-01-25 | 2022-05-13 | 厦门市三安光电科技有限公司 | Light emitting diode and light emitting device |
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| CN114497300B (en) * | 2022-01-25 | 2024-02-27 | 泉州三安半导体科技有限公司 | Light emitting diode and light emitting device |
| CN115863502A (en) * | 2023-02-21 | 2023-03-28 | 江西兆驰半导体有限公司 | LED epitaxial wafer, epitaxial growth method and LED chip |
| CN115863502B (en) * | 2023-02-21 | 2024-03-19 | 江西兆驰半导体有限公司 | LED epitaxial wafer, epitaxial growth method and LED chip |
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