CN104332537A - High concentration Te doped light emitting diode epitaxial structure - Google Patents
High concentration Te doped light emitting diode epitaxial structure Download PDFInfo
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- CN104332537A CN104332537A CN201410551529.2A CN201410551529A CN104332537A CN 104332537 A CN104332537 A CN 104332537A CN 201410551529 A CN201410551529 A CN 201410551529A CN 104332537 A CN104332537 A CN 104332537A
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- 230000004888 barrier function Effects 0.000 claims abstract description 13
- 230000007797 corrosion Effects 0.000 claims abstract description 12
- 238000005260 corrosion Methods 0.000 claims abstract description 12
- 230000012010 growth Effects 0.000 claims description 56
- 239000000463 material Substances 0.000 claims description 48
- 150000001875 compounds Chemical class 0.000 claims description 24
- 239000000470 constituent Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 230000008859 change Effects 0.000 claims description 7
- 230000007423 decrease Effects 0.000 claims description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- 230000009467 reduction Effects 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 229910002704 AlGaN Inorganic materials 0.000 claims description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- 239000012535 impurity Substances 0.000 abstract description 14
- 238000001179 sorption measurement Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008033 biological extinction Effects 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 238000010348 incorporation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
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- 238000004220 aggregation Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
- H01L33/285—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table characterised by the doping materials
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a high concentration Te doped light emitting diode epitaxial structure. A buffer layer, a corrosion barrier layer, a coarsening layer, a first type current spreading layer, a first type limiting layer, an active layer, a second type limiting layer, and a second type current spreading layer. One side of the active layer is provided with the first type current spreading layer, and the other side of the active layer is provided with the second type current spreading layer. The active layer and the first type current spreading layer are provided with the first type limiting layer. The active layer and the second type current spreading layer are provided with the second type limiting layer. The first type current spreading layer is an n-layer structure, superlattice is arranged between layers, Te is doped in the first type current spreading layer. According to the high concentration Te doped light emitting diode epitaxial structure, the adsorption of short-wavelength light by impurities can be reduced, and the light emitting efficiency of a light emitting diode is effectively raised.
Description
Technical field
The present invention relates to LED technology field, refer in particular to the light emitting diode epitaxial structure that a kind of high concentration Te adulterates.
Background technology
Light-emitting diode has the little and high reliability of low-power consumption, size, be widely used, but in prior art, the good light-emitting diode of, luminous efficiency higher to brightness requires to improve.The epitaxial structure adopting Metal Organic Vapor epitaxial growth to have quantum well can obtain higher internal quantum efficiency; And adopt the chip manufacture method of the inverted structure such as metallic mirror and surface coarsening, promote the external quantum efficiency of light-emitting diode significantly.
But, adopt inversion chip structure that the first conductivity type be placed in bottom active layer can be caused to be inverted to the top of active layer.The first type current extending for conventional light emitting diodes structure generally adopts Si element as doped source, and in the light-emitting diode sending out short-wavelength light, Si impurity shows the light that absorption portion active layer sends, and the Si impurity extinction effect be placed on active layer is more obvious.
Adopt Te element to replace Si element can improve the extinction of impurity as the first type current extending doping, effectively improve the external quantum efficiency of light-emitting diode.But Te element is limited to the Wuli-Shili-Renli system approach of self, when epitaxial process Te impurity intake is large, very easily cause epitaxial loayer poor crystal quality.And Te impurity intake is little, there is the problem of current expansion weak effect.In view of this, the present invention, for overcoming described defect, proposes a kind of incorporation efficiency improving Te impurity, and can improve again epitaxial structure and the growing method of epitaxial crystal quality, this case produces thus.
Summary of the invention
The object of the present invention is to provide the light emitting diode epitaxial structure that a kind of high concentration Te adulterates, to reduce the absorption of impurity to short-wavelength light, effectively improve the luminous efficiency of light-emitting diode.
For reaching above-mentioned purpose, solution of the present invention is:
A light emitting diode epitaxial structure for high concentration Te doping, substrate is formed resilient coating, corrosion barrier layer, roughened layer, the first type current extending, the first type limiting layer, active layer, Second-Type limiting layer and Second-Type current extending respectively; Active layer side arranges the first type current extending, and opposite side arranges Second-Type current extending; Active layer and the first type current extending arrange the first type limiting layer, and active layer and Second-Type current extending arrange Second-Type limiting layer; First type current extending is set to n Rotating fields, arranges superlattice between each Rotating fields, and the first type current extending doping Te.
Further, the first type current extending is set to n Rotating fields, and its n is 4-10.
Further, superlattice are alternately made up of two kinds of different materials, and its logarithm replaced is 3-8 couple.
Further, the constituent material of superlattice comprises AlGaInP, AlGaAs, AlGaInAs, GaAs, GaN, AlGaN, AlGaInN.
Further, the n Rotating fields of the first type current extending comprises and being made up of three or five compounds of group of different al component; Comprise and being made up of three or five compounds of group of identical Al component, and adjacent layer structure is made up of the material that Al component is different.
Further, the Al change of component trend of the n Rotating fields material of the first type current extending comprises successively decreases, and the Al change of component trend along active layer epitaxial growth direction is reduction.
Further, each layer thickness of n Rotating fields of the first type current extending is 0.5-2 μm.
Further, each layer thickness variation trend of n Rotating fields of the first type current extending comprises successively decreases, and the thickness changing trend along active layer epitaxial growth direction is reduction.
Further, alternately the constituent material of the first type current extending that two groups of materials of formation superlattice are adjacent with both sides is identical, and the material layer of the first structurally adjacent with both sides type current extending staggers mutually.Namely (the Al of superlattice by alternating growth is supposed
0.43ga
0.57)
0.5in
0.5p/ (Al
0.47ga
0.53)
0.5in
0.5the material layer of P is formed, then with (Al
0.43ga
0.57)
0.5in
0.5the material layer of the first type current extending that P material layer is adjacent is (Al
0.47ga
0.53)
0.5in
0.5p, and with (Al
0.47ga
0.53)
0.5in
0.5the material layer of the first type current extending that P material layer is adjacent is (Al
0.43ga
0.57)
0.5in
0.5p, is namely alternately arranged mutually.
A LED epitaxial method for high concentration Te doping, comprises the following steps:
Step one, on substrate, form resilient coating, corrosion barrier layer, roughened layer respectively, before roughened layer epitaxial growth terminates, reduce growth temperature;
Step 2, on roughened layer the ground floor structure of extension first type current extending;
Step 3, at the first type current extending ground floor structure Epitaxial growth first group of superlattice;
Step 4, on first group of superlattice Epitaxial growth first type current extending second layer structure;
Step 5, repeat step 3, four structure, until on (n-1)th group of superlattice Epitaxial growth first type current extending n-th layer structure;
Step 6, after the first type current extending n-th layer structure growth terminates, pause and improve chamber pressure and strengthen carrier gas flux, and improve epitaxial growth temperature;
Step 7, in the first type current extending n-th layer structure then epitaxial growth first type limiting layer, active layer, Second-Type limiting layer, Second-Type current extending.
Further, before roughened layer epitaxial growth terminates, reduce growth temperature, reduce the scope 10-50 DEG C of epitaxial growth temperature.
Further, being grown to and growing without pausing between layers of the n group structure sheaf of the first current extending and superlattice.
Further, after the first type current extending n-th layer structure growth terminates, the time range of pause is 15-80 second.
Further, after the first type current extending n-th layer structure growth terminates, improve the scope 10-80 DEG C of epitaxial growth temperature.
Further, after the first type current extending n-th layer structure growth terminates, improve the scope 10-80mbar of chamber pressure.
Further, after the first type current extending n-th layer structure growth terminates, strengthen the scope 1000-3000sccm of carrier gas flux.
After adopting such scheme, the present invention, by the first type current extending is set to n Rotating fields, arranges superlattice between Rotating fields, the first type current extending doping Te.Improve Te impurity at the incorporation efficiency of the first type current extending and improve crystal mass.Solve the first type current extending problem that crystal mass sharply worsens when passing into a large amount of Te impurity doping, thus obtain higher epitaxial crystal quality.First type current extending doping Te, decreases the extinction of impurity, effectively improves the luminous efficiency of light-emitting diode.
The n Rotating fields of described first type current extending is made up of three or five compounds of group that Al component is different, or is made up of three or five compounds of group that Al component is identical; And adjacent layer structure is made up of the material that Al component is different.Adjacent layer structure adopts different composition material, adopts the material alternating growth identical with adjacent layer structure for follow-up superlattice, reduces the impact of superlattice on the first type current extending expansion effect.
The Al change of component trend of the n Rotating fields material of the first type current extending comprises successively decreases, and the Al change of component trend along active layer epitaxial growth direction is reduction.Adopt this Al change of component trend to be conducive to raising first type current extending expansion effect, increase the current expansion ability bottom the first type current extending.
Every a layer thickness of n Rotating fields of first type current extending is 0.5-2 μm, and thickness is less than 0.5 μm, weakens the current expansion effect of this Rotating fields; Thickness is more than 2 μm, and the partially thick meeting of thickness causes the Te element aggregation amount in top layer of suspension too much, causes crystal mass sharply to worsen.
Each layer thickness variation trend of the n Rotating fields of the first type current extending comprises successively decreases, and the thickness changing trend along active layer epitaxial growth direction is reduction.Adopt the variation tendency that growth thickness is more and more thinner, be conducive to the crystal mass being improved the first type current extending by superlattice in time, improve the incorporation efficiency of Te element, the Te element preventing later stage first type current extending growing surface from suspending excessive and cause crystal mass sharply to worsen.
The material of two groups of material layers of superlattice alternating growth is identical with the Rotating fields constituent material of the first adjacent type current extending, and the material of two of superlattice alternating growth groups of material layers is different, is namely alternately made up of two groups of material layers of alternating growth.But the material of the first type current extending Rotating fields that superlattice are adjacent with both sides mutually staggers, ground floor superlattice, last one deck superlattice are different from the material of the first adjacent with it current extending Rotating fields.
Before roughened layer epitaxial growth terminates, reduce growth temperature, reduce epitaxial growth temperature and be conducive to being incorporated to of Te, reduce suspension and the effusion of Te.Being grown to and growing without pausing between layers of the structure sheaf of n group formation first current extending and superlattice.Because each layer growth of n group formation first current extending is thicker, employing is conducive to different material layer without pause growth and obtains good interface crystal mass.After first type current extending n-th layer structure growth terminates, the time range of pausing gets 15-80 second, improve the scope 10-80mbar of chamber pressure, strengthen the scope 1000-3000sccm of carrier gas flux, the management and control of these growth courses and the adjustment of growth parameter(s) to be conducive to removing in reative cell Te atmosphere and to increase being incorporated to of epi-layer surface Te, reduce the impact of Te on following epitaxial growth and epi-layer surface.After the first type current extending n-th layer structure growth terminates, improve the scope 10-80 DEG C of epitaxial growth temperature.Reduce the later stage to the impact of the doping content of Second-Type impurity, be conducive to the luminous efficiency improving light-emitting diode.
Accompanying drawing explanation
Fig. 1 is epitaxial structure schematic diagram of the present invention;
Fig. 2 is the structural representation of the first type current extending of the present invention;
Fig. 3 is growth temperature gradient map of the present invention;
Fig. 4 is LED chip construction schematic diagram of the present invention.
Label declaration
Substrate 1 resilient coating 2
Corrosion barrier layer 3 roughened layer 4
First type current extending 5 ground floor structure 51
Second layer structure 52 third layer structure 53
Four-layer structure 54 first groups of superlattice 551
Second group of superlattice 552 the 3rd group of superlattice 553
First type limiting layer 6 active layer 7
Second-Type limiting layer 8 Second-Type current extending 9
Metallic mirror 10 silicon substrate 11
Expansion electrode 12 central electrode 13
Back electrode 14.
Embodiment
Below in conjunction with drawings and the specific embodiments, the present invention is described in detail.
Consult shown in Fig. 1, the light emitting diode epitaxial structure of a kind of high concentration Te doping that the present invention discloses, forms resilient coating 2, corrosion barrier layer 3, roughened layer 4, first type current extending 5, first type limiting layer 6, active layer 7, Second-Type limiting layer 8, Second-Type current extending 9 on substrate 1 respectively.Wherein, the first type current extending 5 is made up of 4 Rotating fields and the superlattice be sandwiched between Rotating fields.
Wherein, substrate 1 adopts GaAs substrate, and thickness is 270 μm.The constituent material of resilient coating 2 adopts GaAs tri-or five compounds of group, and resilient coating 2 thickness is 600nm.Corrosion barrier layer 3 is made up of two parts, and the constituent material of its each several part adopts (Al
0.5ga
0.5)
0.5in
0.5p, GaAs tri-or five compounds of group.(the Al of corrosion barrier layer 3
0.5ga
0.5)
0.5in
0.5p thickness is 300nm; The GaAs thickness of corrosion barrier layer 3 is 100nm.The constituent material of roughened layer 4 adopts (Al
0.7ga
0.3)
0.5in
0.5p tri-or five compounds of group, the thickness of roughened layer 4 is 2.5 μm.
As shown in Figure 2, the first type current extending 5 is made up of 4 Rotating fields, and the constituent material of the first type current extending 5 ground floor structure 51 adopts (Al
0.47ga
0.53)
0.5in
0.5p tri-or five compounds of group, and thickness is 1.5 μm.The constituent material of the first type current extending 5 second layer structure 52 adopts (Al
0.43ga
0.57)
0.5in
0.5p tri-or five compounds of group, and thickness is 1.2 μm.The constituent material of the first type current extending 5 second layer structure 52 adopts (Al
0.39ga
0.61)
0.5in
0.5p tri-or five compounds of group, and thickness is 1 μm.The constituent material of the first type current extending 5 four-layer structure 54 adopts (Al
0.35ga
0.65)
0.5in
0.5p tri-or five compounds of group, and thickness is 0.8 μm.
As shown in Figure 2, between the first type current extending 5 ground floor structure 51 and second layer structure 52 across the (Al of first group of superlattice, 551, first group of superlattice 551 by 5 groups of alternating growths
0.43ga
0.57)
0.5in
0.5p/ (Al
0.47ga
0.53)
0.5in
0.5the material layer of P is formed, every layer of (Al
0.43ga
0.57)
0.5in
0.5p, (Al
0.47ga
0.53)
0.5in
0.5the thickness of P material layer is 3nm.The material layer of first group of wherein adjacent with the first type current extending 5 ground floor structure 51 superlattice 551 is (Al
0.43ga
0.57)
0.5in
0.5p tri-or five compounds of group, the material layer of first group of wherein adjacent with the first type current extending 5 second layer structure 52 superlattice 551 is (Al
0.47ga
0.53)
0.5in
0.5p tri-or five compounds of group.
Across (the Al of second group of superlattice, 552, second group of superlattice 552 by 5 groups of alternating growths between first type current extending 5 second layer structure 52 and third layer structure 53
0.39ga
0.61)
0.5in
0.5p/(Al
0.43ga
0.57)
0.5in
0.5p material layer is formed, every layer of (Al
0.39ga
0.61)
0.5in
0.5p, (Al
0.43ga
0.57)
0.5in
0.5thickness is 3nm.The material layer of first group of wherein adjacent with the first type current extending 5 second layer structure 52 superlattice 552 is (Al
0.39ga
0.61)
0.5in
0.5p tri-or five compounds of group, the material layer of second group of wherein adjacent with the first type current extending 5 third layer structure 53 superlattice 552 is (Al
0.43ga
0.57)
0.5in
0.5three or five compounds of group.
Across the 3rd group of superlattice 553 between first type current extending 5 third layer structure 53 and four-layer structure 54, the 3rd group of superlattice 553 are by (the Al of 5 groups of alternating growths
0.35ga
0.65)
0.5in
0.5p/ (Al
0.39ga
0.61)
0.5in
0.5p material layer is formed, every layer of (Al
0.35ga
0.65)
0.5in
0.5p, (Al
0.39ga
0.61)
0.5in
0.5p thickness is 3nm.The material layer of the 3rd group of wherein adjacent with the first type current extending 5 third layer structure 53 superlattice 553 is (Al
0.35ga
0.65)
0.5in
0.5p tri-or five compounds of group, the material layer of the 3rd group of wherein adjacent with the first type current extending 5 four-layer structure 54 superlattice 553 is (Al
0.39ga
0.61)
0.5in
0.5p tri-or five compounds of group.
The composition material on the first type barrier layer 6 is (Al
0.8ga
0.2)
0.5in
0.5p tri-or five compounds of group, and thickness is 400nm; The composition material on Second-Type barrier layer 8 is (Al
0.8ga
0.2)
0.5in
0.5p tri-or five compounds of group, and thickness is 500nm; The composition material of Second-Type current extending 9 is (Al
0.4ga
0.6)
0.5in
0.5p tri-or five compounds of group, and thickness is 5 μm.Active layer 7, by the quantum well structure of 9 groups of alternating growths, is specially and builds by (Al
0.8ga
0.2)
0.5in
0.5p tri-or five compounds of group is formed, and trap is by (Al
0.1ga
0.9)
0.5in
0.5p tri-or five compounds of group is formed.First type impurity is Te element; Second-Type impurity is Mg element.
A light emitting diode epitaxial structure manufacture method for high concentration Te doping, comprises the following steps:
Step one, on substrate 1 respectively formed resilient coating 2, corrosion barrier layer 3, roughened layer 4, before roughened layer terminates extension, reduce epitaxial growth temperature 30 DEG C in the 120s time, temperature curve is as shown in Figure 3.
Step 2, on roughened layer 4 extension first type current extending 5, be specially and first grow the first type current extending 5 ground floor structure 51, at ground floor structure 51 Epitaxial growth first group of superlattice 551.
Step 3, on first group of superlattice 551 Epitaxial growth first type current extending 5 second layer structure 52, at second layer structure 52 Epitaxial growth second group of superlattice 552.
Step 4, on second group of superlattice 552 Epitaxial growth first type current extending 5 third layer structure 53, at third layer structure 53 Epitaxial growth the 3rd group of superlattice 553.
Step 5, the 3rd group of superlattice 553 Epitaxial growth first type current extending 5 four-layer structure 54.
Step 6, after the first type current extending 5 four-layer structure 54 growth terminates, growth interruption 60s, improves epitaxial growth temperature 30 DEG C simultaneously, and simultaneous reactions chamber pressure increases 20mbar, and the flow of simultaneously hydrogen carrier gas improves 1000sccm.Wherein temperature variation curve as shown in Figure 3.
Step 7, in the first type current extending 5 four-layer structure 54 then epitaxial growth first type limiting layer 6, active layer 7, Second-Type limiting layer 8, Second-Type current extending 9 successively.
Described step obtains, and the light emitting diode epitaxial structure of high concentration Te doping, as shown in Figure 1, following steps are to make light-emitting diode further.
Step 8, at Second-Type current extending 9 evaporation metal speculum 10, and bonding has the silicon substrate 11 of conducting function.
Step 9, corrosion remove substrate 1, resilient coating 2 and corrosion barrier layer 3 respectively.
Step 10, on roughened layer 4, make expansion electrode 12 and central electrode 13, at silicon substrate 11 back side evaporation back electrode 14.
Step 11, carry out surface coarsening on roughened layer 4 surface, sliver is carried out to chip, obtains light-emitting diode as shown in Figure 4.
The foregoing is only one embodiment of the present of invention, not to the restriction of this case design, all equivalent variations done according to the design key of this case, all fall into the protection range of this case.
Claims (9)
1. a light emitting diode epitaxial structure for high concentration Te doping, substrate is formed resilient coating, corrosion barrier layer, roughened layer, the first type current extending, the first type limiting layer, active layer, Second-Type limiting layer and Second-Type current extending respectively; Active layer side arranges the first type current extending, and opposite side arranges Second-Type current extending; Active layer and the first type current extending arrange the first type limiting layer, and active layer and Second-Type current extending arrange Second-Type limiting layer; It is characterized in that: the first type current extending is set to n Rotating fields, arranges superlattice between each Rotating fields, and the first type current extending doping Te.
2. the light emitting diode epitaxial structure of a kind of high concentration Te doping as claimed in claim 1, it is characterized in that: the first type current extending is set to n Rotating fields, its n is 4-10.
3. the light emitting diode epitaxial structure of a kind of high concentration Te doping as claimed in claim 1, is characterized in that: superlattice are alternately made up of two kinds of different materials, and its logarithm replaced is 3-8 couple.
4. the light emitting diode epitaxial structure of a kind of high concentration Te doping as claimed in claim 1, is characterized in that: the constituent material of superlattice comprises AlGaInP, AlGaAs, AlGaInAs, GaAs, GaN, AlGaN, AlGaInN.
5. the light emitting diode epitaxial structure of a kind of high concentration Te doping as claimed in claim 1, is characterized in that: the n Rotating fields of the first type current extending comprises and being made up of three or five compounds of group of different al component; Also comprise and being made up of three or five compounds of group of identical Al component, and adjacent layer structure is made up of the material of different al component.
6. the light emitting diode epitaxial structure of a kind of high concentration Te doping as claimed in claim 5, it is characterized in that: the Al change of component trend of the n Rotating fields material of the first type current extending comprises successively decreases, the Al change of component trend along active layer epitaxial growth direction is reduction.
7. the light emitting diode epitaxial structure of a kind of high concentration Te doping as claimed in claim 1, is characterized in that: each layer thickness of n Rotating fields of the first type current extending is 0.5-2 μm.
8. the light emitting diode epitaxial structure of a kind of high concentration Te doping as claimed in claim 1, it is characterized in that: each layer thickness variation trend of n Rotating fields of the first type current extending comprises successively decreases, the thickness changing trend along active layer epitaxial growth direction is reduction.
9. the light emitting diode epitaxial structure of a kind of high concentration Te doping as claimed in claim 1, it is characterized in that: alternately the constituent material of the first type current extending that two groups of materials of formation superlattice are adjacent with both sides is identical, and the material layer of the first structurally adjacent with both sides type current extending staggers mutually.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106129196A (en) * | 2016-08-30 | 2016-11-16 | 扬州乾照光电有限公司 | A kind of epitaxial wafer for flip LED chips and preparation method thereof |
| CN113823716A (en) * | 2021-09-17 | 2021-12-21 | 厦门士兰明镓化合物半导体有限公司 | LED epitaxial structure and preparation method thereof |
| CN114023857A (en) * | 2021-11-03 | 2022-02-08 | 厦门士兰明镓化合物半导体有限公司 | LED epitaxial structure and preparation method thereof |
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