WO2016065884A1 - Light-emitting diode - Google Patents

Light-emitting diode Download PDF

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Publication number
WO2016065884A1
WO2016065884A1 PCT/CN2015/078571 CN2015078571W WO2016065884A1 WO 2016065884 A1 WO2016065884 A1 WO 2016065884A1 CN 2015078571 W CN2015078571 W CN 2015078571W WO 2016065884 A1 WO2016065884 A1 WO 2016065884A1
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layer
transition
emitting diode
transition layer
light emitting
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PCT/CN2015/078571
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French (fr)
Chinese (zh)
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杜伟华
周启伦
伍明跃
李志明
寻飞林
郑锦坚
李水清
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厦门市三安光电科技有限公司
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Publication of WO2016065884A1 publication Critical patent/WO2016065884A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier

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  • the present invention relates to a semiconductor device, and more particularly to a light emitting diode of a multiple quantum well periodic structure of a group III nitride.
  • Light-emitting diodes have the advantages of high electro-optical conversion efficiency, long service life, environmental protection, energy saving, etc., and have been recognized as the third generation of illumination sources.
  • GaN-based epitaxial wafers are the core components of LEDs and determine the performance of LED products. Luminous efficiency has become a bottleneck affecting the performance of LEDs, affecting the use of products. Therefore, reducing the polarization charge between the barrier layers, weakening the energy band tilt, and improving the luminous efficiency of the device have become hot topics in current research.
  • Chinese patent CN201110258718 "A method for improving the luminous efficiency of LEDs" by growing barrier layers of different thicknesses, by thickening the thickness of the barrier layer close to the N-type layer, reducing the thickness of the barrier layer close to the P-type layer, and improving the recombination of electron holes Efficiency to improve luminous efficiency.
  • the structure described in this scheme has a limited increase in luminous efficiency. Therefore, it is necessary to provide a technical solution that can further reduce the polarization charge of the well barrier interface and improve the luminous efficiency.
  • the main technical solution provided by the present invention is: a light emitting diode comprising a substrate, a buffer layer, an N-type layer, a stress relief layer, a light-emitting layer, a P-type layer and a P-type contact layer in this order from bottom to top.
  • the light emitting layer is a multiple quantum well periodic structure of a barrier layer, a first transition layer, a well layer, and a second transition layer, wherein at least one barrier layer, the first transition layer, and the second transition layer comprise at least two non-uniform thicknesses Thin layer of AlN.
  • any one of the barrier layer, the first transition layer, and the second transition layer is inserted into at least two thin layers of AlN.
  • At least two of the barrier layer, the first transition layer, and the second transition layer are each inserted with at least one AlN thin layer.
  • At least one of the AlN thin layers is inserted into each of the barrier layer, the first transition layer, and the second transition layer.
  • the thickness variation of the AlN thin layer may vary linearly or nonlinearly along the growth direction, and the thickness gradually changes along the growth direction in the barrier layer, the first transition layer, and the second transition layer, and may be gradually reduced, or may be gradually decreased. Gradually increase, or increase first and then decrease, or decrease first and then increase.
  • the thickness of the AlN thin layer fluctuates in the range of 0.1 nm to 6 nm, and the number of layers is preferably 2 to 10 layers.
  • All of the multiple quantum well periodic structures of the luminescent layer are intercalated into the AlN thin layer or only a portion of the multiple quantum well periodic structure is inserted into the AlN thin layer.
  • the number of layers of the AlN thin layer may be the entire barrier layer of the light emitting layer and the first transition layer, the second transition layer or the partial barrier layer, and the first transition layer and the second transition layer thereof.
  • the doping level of the AlN thin layer is between 1 ⁇ 10 16 cm ⁇ 3 and 1 ⁇ 10 19 cm ⁇ 3 , and the doping concentration of the AlN thin layer in the barrier layer is not lower than the doping of the barrier layer.
  • the doping concentration in one of the transition layer and the second transition layer is not higher than the doping concentration of the barrier layer.
  • the number of cycles of the multiple quantum well structure of the light-emitting layer is n: 2 to 100, preferably 5 to 15.
  • the barrier layer of the multiple quantum well structure is composed of Al x In y Ga 1-xy N, where 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x+y ⁇ 1.
  • the thickness of the barrier layer may vary or may remain unchanged.
  • the well layer of the multiple quantum well structure is composed of Al p In q Ga 1-pq N, wherein 0 ⁇ p ⁇ 1, 0 ⁇ q ⁇ 1, 0 ⁇ p+q ⁇ 1, and the growth temperature thereof is not greater than that of the barrier layer
  • the growth temperature, the In composition of the quantum well layer should be no less than the In composition in the barrier layer, and the maximum value of the forbidden band width is not greater than the forbidden band width of the barrier layer material.
  • the first transition layer of the multiple quantum well structure is composed of Al a In b Ga 1-ab N, where 0 ⁇ a ⁇ 1, 0 ⁇ b ⁇ 1, 0 ⁇ a + b ⁇ 1, and the maximum band gap is The value is not greater than the forbidden band width of the barrier layer material, and the minimum value is not less than the forbidden band width of the well layer material.
  • the second transition layer of the multiple quantum well structure is composed of Al c In d Ga 1-cd N, where 0 ⁇ c ⁇ 1, 0 ⁇ d ⁇ 1, 0 ⁇ c+d ⁇ 1, and the maximum band gap is The value is not greater than the forbidden band width of the barrier layer material, and the minimum value is not less than the forbidden band width of the well layer material.
  • the material of the second transition layer may be the same as or different from the first transition layer.
  • the overlapping structure formed by the non-uniform thickness AlN thin layer and the barrier layer, the first transition layer and the second transition layer provided by the present invention can effectively modulate the polarization field of the quantum well region and reduce the barrier layer between the barrier layers.
  • the polarization charge reduces the energy band tilt and improves the radiation recombination efficiency of carriers in the quantum well region.
  • the high-concentration two-dimensional electron gas in the heterojunction interface formed by the AlN thin layer and the barrier layer, the first transition layer and the second transition layer can make the current distribution more uniform, thereby improving the reliability of the LED and Antistatic ability.
  • the thickness, the number of layers and the doping concentration of the AlN thin layer used in the present invention can be adjusted, and the optimization of the luminous efficiency of the light-emitting diodes of different wavelength bands can be optimized.
  • FIG. 1 is a cross-sectional view of a light emitting diode according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view showing a multiple quantum well structure of a light emitting diode according to an embodiment of the present invention.
  • FIG. 3 is a schematic diagram of control of a first form of a multiple quantum well structure according to an embodiment of the present invention.
  • FIG. 4 is a schematic diagram of control of a second form of a multiple quantum well structure according to an embodiment of the present invention.
  • FIG. 5 is a schematic diagram of a third form of control of a multiple quantum well structure according to an embodiment of the present invention.
  • FIG. 6 is a schematic diagram of a fourth form of control of a multiple quantum well structure according to an embodiment of the present invention.
  • the present invention provides a multi-quantum well structure light-emitting diode of a non-uniform thickness AlN thin layer, which includes, from bottom to top, in order:
  • a substrate 100 selected from sapphire (Al 2 O 3 ), SiC, GaN or Si, and a sapphire substrate is preferred in this embodiment.
  • a buffer layer 101 grown on the substrate 100 subjected to high temperature hydrogenation being gallium nitride (GaN) and/or aluminum nitride (AlN) and/or aluminum gallium nitride (GaAlN)
  • the layer has a growth temperature of 400 to 650 ° C and a thickness of 1 nm to 50 nm.
  • an N-type GaN layer 102 grown on the buffer layer 101 having a growth temperature of 1000 to 1200 ° C, a thickness of 500 nm to 5000 nm, and a doping concentration of 1 ⁇ 10 18 to 1 ⁇ 10 20 cm -3 , preferably 1 ⁇ 10 19 cm - 3 , and the doping source is preferably SiH4.
  • a stress releasing layer 103 which is located on the N-type GaN layer 102, preferably an InGaN/GaN layer, having a growth temperature of 700 to 1000 ° C and a thickness of 10 to 500 nm.
  • the multi-quantum well structure light-emitting layer 104 is formed by alternately stacking the periodic barrier layer 104a/first transition layer 104b/well layer 104c/second transition layer/104c, as shown in FIG. 2, the number of periods n: 2 ⁇ 100, preferably 5-15.
  • the thickness of the barrier layer 104a is 5 nm to 30 nm
  • the thickness of the first transition layer 104b is 0.5 nm to 10 nm
  • the thickness of the well layer 104c is 1 nm to 10 nm
  • the thickness of the second transition layer 104d is 0.5 nm to 10 nm.
  • the light emitting layer is a multiple quantum well periodic structure of the barrier layer, the first transition layer, the well layer, and the second transition layer.
  • two non-uniform thickness AlN thin layers are inserted in the barrier layer,
  • the thickness of the AlN thin layer in the barrier layer may gradually decrease along the growth direction, or may gradually increase, or first increase and then decrease, or decrease first and then increase.
  • the thickness of the AlN thin layer in the barrier layer gradually decreases along the growth direction.
  • the thickness of the AlN thin layer 104an in the barrier layer is 0.1 nm to 6 nm, and the number of layers is preferably 2 to 10 layers.
  • the thickness of the AlN thin layer 104bn in the first transition layer is 0.1 nm to 6 nm, and the number of layers is preferably 2 to 10 layers.
  • the thickness of the AlN thin layer 104dn in the second transition layer is 0.1 nm to 6 nm, and the number of layers is preferably 2-10 layers.
  • the insertion position of the AlN thin layer may be located in all or a part of the barrier layer of the light-emitting layer.
  • the change in the thickness of the AlN thin layer may vary linearly or non-linearly along the growth direction.
  • the doping level of the AlN thin layer in the barrier layer is between 1 ⁇ 10 16 and 1 ⁇ 10 19 cm ⁇ 3 , and the doping concentration is not lower than the doping of the barrier layer, and the first transition layer and the second transition layer are The doping concentration of the AlN thin layer is not higher than the doping concentration of the barrier layer, and the doping source is preferably SiH4.
  • the insertion positions of the AlN thin layers 104an, 104bn, 104dn in the barrier layer 104a, the first transition layer 104b, and the second transition layer 104d, respectively, are adjustable.
  • a P-type GaN layer 105 grown on the MQW light-emitting layer 103 having a growth temperature of 800 to 1000 ° C, a thickness of 10 nm to 300 nm, and a doping concentration of 1 ⁇ 10 19 to 1 ⁇ 10 21 cm -3 , preferably 1 ⁇ 10 20 cm -3 , and the doping source is preferably CP2Mg.
  • a P-type contact layer 106 grown on the P-type GaN layer 105 having a growth temperature of 800 to 1000 ° C, a thickness of 1 nm to 30 nm, and a doping concentration of 1 ⁇ 10 19 ⁇ 1 ⁇ 10 22 cm -3 , preferably 5 ⁇ 10 20 cm -3 , and the doping source is preferably CP2Mg.
  • a P electrode 108 which is formed on the P-type contact layer 106.
  • An insulating protective layer 109 is formed on the surface of the bare light emitting diode for protecting the light emitting diode.
  • step (5) Different from Embodiment 1 is the step (5).
  • a thin layer of AlN of a non-uniform thickness is inserted into each of the barrier layer and the first transition layer, and the AlN layer is in the barrier layer and the first transition.
  • the thickness in the layer gradually decreases along the growth direction.
  • the step (5) is as shown in FIG. 5, in which a thin layer of AlN having a non-uniform thickness is inserted in each of the barrier layer, the first transition layer, and the second transition layer.
  • the thickness of the AlN thin layer in the barrier layer, the first transition layer, and the second transition layer gradually decreases along the growth direction.
  • each of the barrier layers, the first transition layer, and the second transition layer are inserted.
  • Into two thin layers of AlN of non-uniform thickness In the thin layer of AlN, the thickness gradually decreases along the growth direction in the barrier layer, and the thickness gradually decreases along the growth direction in the first transition layer, and the thickness gradually increases along the growth direction in the second transition layer.
  • the above multiple quantum well structure light emitting diode adopts an overlapping structure formed by a non-uniform thickness of the AlN thin layer and the barrier layer, the first transition layer and the second transition layer, which can effectively modulate the polarization field of the quantum well region and reduce the barrier layer.
  • the polarization charge between the layers weakens the energy band tilt and improves the radiation recombination efficiency of the carriers in the quantum well region, thereby improving the luminous efficiency.
  • the heterojunction interface formed by the AlN thin layer and the barrier layer, the first transition layer and the second transition layer can have a high concentration of two-dimensional electron gas, which can make the current distribution more uniform, thereby improving the reliability and resistance of the LED. Static capacity.
  • the thickness, the number of layers and the doping concentration of the thin layer of AlN used in the invention can be adjusted, and the optimization of the luminous efficiency of the light-emitting diodes of different wavelength bands can be optimized.

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Abstract

A light-emitting diode, at least comprising: an N-type layer (102), a light-emitting layer (104) and a P-type layer (105). The light-emitting layer (104) is a multi-quantum well periodical structure of a barrier layer (104a), a first transition layer (104b), a well layer (104c) and a second transition layer (104d), and at least two AlN thin layers (104an，104bn，104dn) of non-uniform thickness are inserted into the first transition layer and the second transition layer. The overlap structure formed by using the AlN thin layer with the barrier layer, the first transition layer and the second transition layer can effectively modulate the polarization field of the quantum well region, reduce polarization charge between the well and barrier layer, and reduce an incline of an energy band, and improve radiation recombination efficiency of a current carrier in the quantum well region.

Description

发光二极管led
本申请要求于2014年10月31日提交中国专利局、申请号为201410600804.5、发明名称为“一种发光二极管”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。The present application claims priority to Chinese Patent Application No. 2014-10600804.5, the entire disclosure of which is incorporated herein in
技术领域Technical field
本发明涉及半导体器件，更详细地说，是涉及Ⅲ族氮化物的多量子阱周期结构的发光二极管。The present invention relates to a semiconductor device, and more particularly to a light emitting diode of a multiple quantum well periodic structure of a group III nitride.
发明背景Background of the invention
发光二极管具有电光转换效率高、使用寿命长、环保、节能等优点，已被公认为第三代照明光源。GaN基外延片是LED的核心组成部分，决定着LED产品的性能。发光效率已成为影响发光二极管性能的瓶颈，影响产品的用途拓展。因此减少阱垒层之间的极化电荷，减弱能带倾斜，提高器件的发光效率已经成为目前的技术研究热点。Light-emitting diodes have the advantages of high electro-optical conversion efficiency, long service life, environmental protection, energy saving, etc., and have been recognized as the third generation of illumination sources. GaN-based epitaxial wafers are the core components of LEDs and determine the performance of LED products. Luminous efficiency has become a bottleneck affecting the performance of LEDs, affecting the use of products. Therefore, reducing the polarization charge between the barrier layers, weakening the energy band tilt, and improving the luminous efficiency of the device have become hot topics in current research.
中国专利CN201110258718《一种提高发光二极管发光效率的方法》通过生长不同厚度的垒层，通过加厚靠近N型层的垒层厚度，降低靠近P型层的垒层厚度，提高电子空穴的复合效率从而提高发光效率。该方案所述的结构对于发光效率提升幅度有限。因此需要提供一种可以进一步减少阱垒界面极化电荷、提高发光效率的技术方案。Chinese patent CN201110258718 "A method for improving the luminous efficiency of LEDs" by growing barrier layers of different thicknesses, by thickening the thickness of the barrier layer close to the N-type layer, reducing the thickness of the barrier layer close to the P-type layer, and improving the recombination of electron holes Efficiency to improve luminous efficiency. The structure described in this scheme has a limited increase in luminous efficiency. Therefore, it is necessary to provide a technical solution that can further reduce the polarization charge of the well barrier interface and improve the luminous efficiency.
发明内容Summary of the invention
本发明提供的主要技术方案为：一种发光二极管，从下至上依次包括衬底、缓冲层、N型层、应力释放层、发光层、P型层和P型接触层。The main technical solution provided by the present invention is: a light emitting diode comprising a substrate, a buffer layer, an N-type layer, a stress relief layer, a light-emitting layer, a P-type layer and a P-type contact layer in this order from bottom to top.
所述发光层为垒层、第一过渡层、阱层、第二过渡层的多量子阱周期结构，其中至少一个垒层、第一过渡层、第二过渡层包含至少两个非均匀厚度的AlN薄层。The light emitting layer is a multiple quantum well periodic structure of a barrier layer, a first transition layer, a well layer, and a second transition layer, wherein at least one barrier layer, the first transition layer, and the second transition layer comprise at least two non-uniform thicknesses Thin layer of AlN.
在本发明的一些实施例中，所述垒层、第一过渡层和第二过渡层中的任意一层至少插入两个AlN薄层。In some embodiments of the invention, any one of the barrier layer, the first transition layer, and the second transition layer is inserted into at least two thin layers of AlN.
在本发明的一些实施例中，所述垒层、第一过渡层和第二过渡层中的至少有两层各至少插入一个AlN薄层。 In some embodiments of the present invention, at least two of the barrier layer, the first transition layer, and the second transition layer are each inserted with at least one AlN thin layer.
在本发明的一些实施例中，所述垒层、第一过渡层和第二过渡层中的每层各至少插入一个AlN薄层。In some embodiments of the invention, at least one of the AlN thin layers is inserted into each of the barrier layer, the first transition layer, and the second transition layer.
所述AlN薄层的厚度变化沿生长方向可以为线性变化或非线性变化，其在垒层、第一过渡层、第二过渡层中厚度沿着生长方向逐渐变化，可以逐渐减小，也可以逐渐增大，或者先增大后减小，或者先减小后增大。The thickness variation of the AlN thin layer may vary linearly or nonlinearly along the growth direction, and the thickness gradually changes along the growth direction in the barrier layer, the first transition layer, and the second transition layer, and may be gradually reduced, or may be gradually decreased. Gradually increase, or increase first and then decrease, or decrease first and then increase.
所述AlN薄层的厚度在0.1nm～6nm范围内波动，层数优选2～10层。The thickness of the AlN thin layer fluctuates in the range of 0.1 nm to 6 nm, and the number of layers is preferably 2 to 10 layers.
所述发光层的所有多量子阱周期结构均插入AlN薄层或者仅部分多量子阱周期结构插入AlN薄层。All of the multiple quantum well periodic structures of the luminescent layer are intercalated into the AlN thin layer or only a portion of the multiple quantum well periodic structure is inserted into the AlN thin layer.
进一步地，所述AlN薄层的层数可以为发光层的全部垒层及其第一过渡层、第二过渡层或部分垒层及其第一过渡层、第二过渡层。Further, the number of layers of the AlN thin layer may be the entire barrier layer of the light emitting layer and the first transition layer, the second transition layer or the partial barrier layer, and the first transition layer and the second transition layer thereof.
所述AlN薄层的掺杂水平介于1×1016cm-3～1×1019cm-3之间，位于垒层中的AlN薄层掺杂浓度不低于垒层的掺杂，第一过渡层和第二过渡层中的掺杂浓度不高于垒层的掺杂浓度。The doping level of the AlN thin layer is between 1×10 16 cm −3 and 1×10 19 cm −3 , and the doping concentration of the AlN thin layer in the barrier layer is not lower than the doping of the barrier layer. The doping concentration in one of the transition layer and the second transition layer is not higher than the doping concentration of the barrier layer.
所述发光层的多量子阱结构的周期个数n：2～100，优选5～15。The number of cycles of the multiple quantum well structure of the light-emitting layer is n: 2 to 100, preferably 5 to 15.
所述多量子阱结构的垒层由AlxInyGa1-x-yN组成，其中0≤x≤1，0≤y≤1，0≤x+y≤1。所述垒层的厚度可以变化也可以保持不变。The barrier layer of the multiple quantum well structure is composed of Al x In y Ga 1-xy N, where 0≤x≤1, 0≤y≤1, 0≤x+y≤1. The thickness of the barrier layer may vary or may remain unchanged.
所述多量子阱结构的阱层由AlpInqGa1-p-qN组成，其中0≤p≤1，0<q≤1，0≤p+q≤1，其生长温度不大于垒层的生长温度，所述量子阱层的In组分应不小于垒层中的In组分，其禁带宽度的最大值不大于垒层材料的禁带宽度。The well layer of the multiple quantum well structure is composed of Al p In q Ga 1-pq N, wherein 0≤p≤1, 0<q≤1, 0≤p+q≤1, and the growth temperature thereof is not greater than that of the barrier layer The growth temperature, the In composition of the quantum well layer should be no less than the In composition in the barrier layer, and the maximum value of the forbidden band width is not greater than the forbidden band width of the barrier layer material.
所述多量子阱结构的第一过渡层由AlaInbGa1-a-bN组成，其中0≤a≤1，0≤b≤1，0≤a+b≤1，其禁带宽度的最大值不大于垒层材料的禁带宽度，最小值不小于阱层材料的禁带宽度。The first transition layer of the multiple quantum well structure is composed of Al a In b Ga 1-ab N, where 0 ≤ a ≤ 1, 0 ≤ b ≤ 1, 0 ≤ a + b ≤ 1, and the maximum band gap is The value is not greater than the forbidden band width of the barrier layer material, and the minimum value is not less than the forbidden band width of the well layer material.
所述多量子阱结构的第二过渡层由AlcIndGa1-c-dN组成，其中0≤c≤1，0≤d≤1，0≤c+d≤1，其禁带宽度的最大值不大于垒层材料的禁带宽度，最小值不小于阱层材料的禁带宽度。第二过渡层的材料与第一过渡层可以相同，也可以不同。The second transition layer of the multiple quantum well structure is composed of Al c In d Ga 1-cd N, where 0≤c≤1, 0≤d≤1, 0≤c+d≤1, and the maximum band gap is The value is not greater than the forbidden band width of the barrier layer material, and the minimum value is not less than the forbidden band width of the well layer material. The material of the second transition layer may be the same as or different from the first transition layer.
本发明所述的发光二极管，具有以下有益效果： The light emitting diode of the invention has the following beneficial effects:
(1)本发明提供的非均匀厚度的AlN薄层与垒层、第一过渡层、第二过渡层形成的交叠结构，可以有效调制量子阱区的极化场，减少阱垒层之间的极化电荷，减弱能带倾斜，提高载流子在量子阱区的辐射复合效率。(1) The overlapping structure formed by the non-uniform thickness AlN thin layer and the barrier layer, the first transition layer and the second transition layer provided by the present invention can effectively modulate the polarization field of the quantum well region and reduce the barrier layer between the barrier layers. The polarization charge reduces the energy band tilt and improves the radiation recombination efficiency of carriers in the quantum well region.
(2)AlN薄层与垒层、第一过渡层、第二过渡层形成的异质结界面内可高浓度二维电子气，可使得电流分布更为均匀，从而提高发光二极管的可靠性和抗静电能力。(2) The high-concentration two-dimensional electron gas in the heterojunction interface formed by the AlN thin layer and the barrier layer, the first transition layer and the second transition layer can make the current distribution more uniform, thereby improving the reliability of the LED and Antistatic ability.
(3)本发明采用的AlN薄层的厚度、层数及掺杂浓度可调节，对于不同波段的发光二极管发光效率的提升可优化空间大。(3) The thickness, the number of layers and the doping concentration of the AlN thin layer used in the present invention can be adjusted, and the optimization of the luminous efficiency of the light-emitting diodes of different wavelength bands can be optimized.
附图说明DRAWINGS
图1为本发明实施例提供的发光二极管的剖面示意图。FIG. 1 is a cross-sectional view of a light emitting diode according to an embodiment of the present invention.
图2为本发明实施例提供的发光二极管的多量子阱结构的剖面示意图。2 is a cross-sectional view showing a multiple quantum well structure of a light emitting diode according to an embodiment of the present invention.
图3为本发明实施例提供的多量子阱结构的第一种形式的控制示意图。FIG. 3 is a schematic diagram of control of a first form of a multiple quantum well structure according to an embodiment of the present invention.
图4为本发明实施例提供的多量子阱结构的第二种形式的控制示意图。FIG. 4 is a schematic diagram of control of a second form of a multiple quantum well structure according to an embodiment of the present invention.
图5为本发明实施例提供的多量子阱结构的第三种形式的控制示意图。FIG. 5 is a schematic diagram of a third form of control of a multiple quantum well structure according to an embodiment of the present invention.
图6为本发明实施例提供的多量子阱结构的第四种形式的控制示意图。FIG. 6 is a schematic diagram of a fourth form of control of a multiple quantum well structure according to an embodiment of the present invention.
图中标示：100：衬底；101：缓冲层；102：N型GaN层；103：应力释放层；104：MQW发光层；104a：AlxInyGa1-x-yN垒层；104b:AlaInbGa1-a-bN第一过渡层；104c：AlpInqGa1-p-qN阱层；104d：AlcIndGa1-c-dN第二过渡层；104an，104bn，104dn：AlN薄层；105：P型层；106：P型接触层；107：N电极；108：P电极；109：绝缘保护层。The figure indicates: 100: substrate; 101: buffer layer; 102: N-type GaN layer; 103: stress relief layer; 104: MQW light-emitting layer; 104a: Al x In y Ga 1-xy N barrier layer; 104b: Al a In b Ga 1-ab N first transition layer; 104c: Al p In q Ga 1-pq N well layer; 104d: Al c In d Ga 1-cd N second transition layer; 104an, 104bn, 104dn: AlN Thin layer; 105: P-type layer; 106: P-type contact layer; 107: N-electrode; 108: P-electrode; 109: Insulating protective layer.
具体实施方式detailed description
下面将结合附图对本发明的非均匀厚度AlN薄层的多量子阱结构发光二极管的优选实施例进行更详细的描述。A preferred embodiment of the multi-quantum well structure light-emitting diode of the non-uniform thickness AlN thin layer of the present invention will now be described in more detail with reference to the accompanying drawings.
实施例1Example 1
如图1所示，本发明提供一种非均匀厚度AlN薄层的多量子阱结构发光二极管，从下至上依次包括： As shown in FIG. 1, the present invention provides a multi-quantum well structure light-emitting diode of a non-uniform thickness AlN thin layer, which includes, from bottom to top, in order:
(1)一衬底100，所述衬底选用蓝宝石(Al2O3)、SiC、GaN或Si，本实施例优选蓝宝石衬底。(1) A substrate 100 selected from sapphire (Al 2 O 3 ), SiC, GaN or Si, and a sapphire substrate is preferred in this embodiment.
(2)一缓冲层101，所述缓冲层生长在经过高温氢化处理的衬底100之上，为氮化镓(GaN)和/或氮化铝(AlN)和/或氮化铝镓(GaAlN)层，生长温度为400～650℃，厚度为1nm～50nm。(2) a buffer layer 101 grown on the substrate 100 subjected to high temperature hydrogenation, being gallium nitride (GaN) and/or aluminum nitride (AlN) and/or aluminum gallium nitride (GaAlN) The layer has a growth temperature of 400 to 650 ° C and a thickness of 1 nm to 50 nm.
(3)一N型GaN层102，所述N型GaN层生长在缓冲层101之上，生长温度为1000～1200℃，厚度为500nm～5000nm，掺杂浓度为1×1018～1×1020cm-3，优选1×1019cm- 3，掺杂源优选SiH4。(3) an N-type GaN layer 102 grown on the buffer layer 101, having a growth temperature of 1000 to 1200 ° C, a thickness of 500 nm to 5000 nm, and a doping concentration of 1 × 10 18 to 1 × 10 20 cm -3 , preferably 1 × 10 19 cm - 3 , and the doping source is preferably SiH4.
(4)一应力释放层103，所述应力释放层位于N型GaN层102之上，材料优选InGaN/GaN层，生长温度为700～1000℃，厚度为10～500nm。(4) A stress releasing layer 103, which is located on the N-type GaN layer 102, preferably an InGaN/GaN layer, having a growth temperature of 700 to 1000 ° C and a thickness of 10 to 500 nm.
(5)一(AlxInyGa1-x-yN/AlpInqGa1-p-qN)n多量子阱(MQW)结构发光层104，所述多量子阱结构发光层生长在应力释放层103之上，生长温度为700～900℃。所述多量子阱结构发光层104由周期性的垒层104a/第一过渡层104b/阱层104c/第二过渡层/104c交替堆叠而成，如图2所示，周期个数n：2～100，优选5～15。(5) an (Al x In y Ga 1-xy N/Al p In q Ga 1-pq N)n multiple quantum well (MQW) structure light-emitting layer 104, wherein the multiple quantum well structure light-emitting layer is grown on the stress relaxation layer Above 103, the growth temperature is 700 to 900 °C. The multi-quantum well structure light-emitting layer 104 is formed by alternately stacking the periodic barrier layer 104a/first transition layer 104b/well layer 104c/second transition layer/104c, as shown in FIG. 2, the number of periods n: 2 ～100, preferably 5-15.
其中所述垒层104a的厚度为5nm～30nm，所述第一过渡层104b的厚度为0.5nm～10nm，所述阱层104c的厚度为1nm～10nm，所述第二过渡层104d的厚度为0.5nm～10nm。The thickness of the barrier layer 104a is 5 nm to 30 nm, the thickness of the first transition layer 104b is 0.5 nm to 10 nm, the thickness of the well layer 104c is 1 nm to 10 nm, and the thickness of the second transition layer 104d is 0.5 nm to 10 nm.
所述发光层为垒层、第一过渡层、阱层、第二过渡层的多量子阱周期结构，如图3所示，在垒层中插入两个非均匀厚度的AlN薄层，所述AlN薄层在垒层中的厚度沿着生长方向可以逐渐减小，也可以逐渐增大，或者先增大后减小，或者先减小后增大。优选的，所述AlN薄层，在垒层中的厚度沿着生长方向逐渐减小。所述垒层中AlN薄层104an的厚度为0.1nm～6nm，层数优选2-10层。The light emitting layer is a multiple quantum well periodic structure of the barrier layer, the first transition layer, the well layer, and the second transition layer. As shown in FIG. 3, two non-uniform thickness AlN thin layers are inserted in the barrier layer, The thickness of the AlN thin layer in the barrier layer may gradually decrease along the growth direction, or may gradually increase, or first increase and then decrease, or decrease first and then increase. Preferably, the thickness of the AlN thin layer in the barrier layer gradually decreases along the growth direction. The thickness of the AlN thin layer 104an in the barrier layer is 0.1 nm to 6 nm, and the number of layers is preferably 2 to 10 layers.
所述第一过渡层中AlN薄层104bn的厚度为0.1nm～6nm，层数优选2-10层。The thickness of the AlN thin layer 104bn in the first transition layer is 0.1 nm to 6 nm, and the number of layers is preferably 2 to 10 layers.
所述第二过渡层中AlN薄层104dn的厚度为0.1nm～6nm，层数优选2-10层。The thickness of the AlN thin layer 104dn in the second transition layer is 0.1 nm to 6 nm, and the number of layers is preferably 2-10 layers.
所述AlN薄层的插入位置可以位于发光层的全部垒层或部分垒层中。The insertion position of the AlN thin layer may be located in all or a part of the barrier layer of the light-emitting layer.
所述AlN薄层厚度的变化沿生长方向可以为线性变化或非线性变化。 The change in the thickness of the AlN thin layer may vary linearly or non-linearly along the growth direction.
所述垒层中AlN薄层掺杂水平介于1×1016～1×1019cm-3之间，掺杂浓度不低于垒层的掺杂，第一过渡层和第二过渡层中的AlN薄层掺杂浓度不高于垒层的掺杂浓度，掺杂源优选SiH4。The doping level of the AlN thin layer in the barrier layer is between 1×10 16 and 1×10 19 cm −3 , and the doping concentration is not lower than the doping of the barrier layer, and the first transition layer and the second transition layer are The doping concentration of the AlN thin layer is not higher than the doping concentration of the barrier layer, and the doping source is preferably SiH4.
所述分别在垒层104a、第一过渡层104b、第二过渡层104d中的AlN薄层104an、104bn、104dn的插入位置可调节。The insertion positions of the AlN thin layers 104an, 104bn, 104dn in the barrier layer 104a, the first transition layer 104b, and the second transition layer 104d, respectively, are adjustable.
(6)一P型GaN层105，所述P型GaN层生长在MQW发光层103之上,生长温度为800～1000℃，厚度为10nm～300nm，掺杂浓度为1×1019～1×1021cm-3，优选1×1020cm-3，掺杂源优选CP2Mg。(6) a P-type GaN layer 105 grown on the MQW light-emitting layer 103, having a growth temperature of 800 to 1000 ° C, a thickness of 10 nm to 300 nm, and a doping concentration of 1 × 10 19 to 1 × 10 21 cm -3 , preferably 1 × 10 20 cm -3 , and the doping source is preferably CP2Mg.
(7)一P型接触层106，所述P型GaN层生长在P型GaN层105之上,生长温度为800～1000℃，厚度为1nm～30nm，掺杂浓度为1×1019～1×1022cm-3，优选5×1020cm-3，掺杂源优选CP2Mg。(7) a P-type contact layer 106 grown on the P-type GaN layer 105, having a growth temperature of 800 to 1000 ° C, a thickness of 1 nm to 30 nm, and a doping concentration of 1 × 10 19 ～1 ×10 22 cm -3 , preferably 5 × 10 20 cm -3 , and the doping source is preferably CP2Mg.
(8)一N电极107，所述N电极制作在通过蚀刻工艺暴露出的部分N型GaN层102之上。(8) An N electrode 107 which is formed on a portion of the N-type GaN layer 102 exposed by the etching process.
(9)一P电极108，所述P电极制作在P型接触层106之上。(9) A P electrode 108 which is formed on the P-type contact layer 106.
(10)一绝缘保护层109，所述绝缘保护层制作在裸露发光二极管的表面，用于保护发光二极管。(10) An insulating protective layer 109 is formed on the surface of the bare light emitting diode for protecting the light emitting diode.
实施例2Example 2
与实施例1不同的是步骤(5)，如图4所示，在垒层、第一过渡层中各插入一个非均匀厚度的AlN薄层所述AlN薄层，在垒层、第一过渡层中的厚度沿着生长方向逐渐减小。Different from Embodiment 1 is the step (5). As shown in FIG. 4, a thin layer of AlN of a non-uniform thickness is inserted into each of the barrier layer and the first transition layer, and the AlN layer is in the barrier layer and the first transition. The thickness in the layer gradually decreases along the growth direction.
实施例3Example 3
与实施例1不同的是步骤(5)，如图5所示，在垒层、第一过渡层、第二过渡层中各插入一个非均匀厚度的AlN薄层。所述AlN薄层，在垒层、第一过渡层、第二过渡层中的厚度沿着生长方向逐渐减小。Different from Embodiment 1, the step (5) is as shown in FIG. 5, in which a thin layer of AlN having a non-uniform thickness is inserted in each of the barrier layer, the first transition layer, and the second transition layer. The thickness of the AlN thin layer in the barrier layer, the first transition layer, and the second transition layer gradually decreases along the growth direction.
实施例4Example 4
与实施例1不同的是步骤(5)，如图6所示，在垒层、第一过渡层、第二过渡层中各插 入两个非均匀厚度的AlN薄层。所述AlN薄层，在垒层中厚度沿着生长方向逐渐减小，在第一过渡层中厚度沿着生长方向逐渐减小，在第二过渡层中厚度沿着生长方向逐渐增大。Different from Embodiment 1 is the step (5). As shown in FIG. 6, each of the barrier layers, the first transition layer, and the second transition layer are inserted. Into two thin layers of AlN of non-uniform thickness. In the thin layer of AlN, the thickness gradually decreases along the growth direction in the barrier layer, and the thickness gradually decreases along the growth direction in the first transition layer, and the thickness gradually increases along the growth direction in the second transition layer.
以上多量子阱结构发光二极管，采用非均匀厚度的AlN薄层与垒层、第一过渡层、第二过渡层形成的交叠结构，可以有效调制量子阱区的极化场，减少阱垒层层之间的极化电荷，减弱能带倾斜，提高载流子在量子阱区的辐射复合效率，从而提高发光效率。同时，AlN薄层与垒层、第一过渡层、第二过渡层形成的异质结界面内可高浓度二维电子气，可使得电流分布更为均匀，从而提高发光二极管的可靠性和抗静电能力。此外，本发明采用的AlN薄层的厚度、层数及掺杂浓度可调节，对于不同波段的发光二极管发光效率的提升可优化空间大。The above multiple quantum well structure light emitting diode adopts an overlapping structure formed by a non-uniform thickness of the AlN thin layer and the barrier layer, the first transition layer and the second transition layer, which can effectively modulate the polarization field of the quantum well region and reduce the barrier layer. The polarization charge between the layers weakens the energy band tilt and improves the radiation recombination efficiency of the carriers in the quantum well region, thereby improving the luminous efficiency. At the same time, the heterojunction interface formed by the AlN thin layer and the barrier layer, the first transition layer and the second transition layer can have a high concentration of two-dimensional electron gas, which can make the current distribution more uniform, thereby improving the reliability and resistance of the LED. Static capacity. In addition, the thickness, the number of layers and the doping concentration of the thin layer of AlN used in the invention can be adjusted, and the optimization of the luminous efficiency of the light-emitting diodes of different wavelength bands can be optimized.
以上表示了本发明的优选实施例，应该理解的是，本领域技术人员可以修改在此描述的本发明，而仍然实现本发明的有利效果。因此，以上描述应当被理解为对于本领域技术人员的广泛知道，而并不作为对本发明的限制，凡依本发明所做的任何变更，皆属本发明的保护范围之内。 The above shows a preferred embodiment of the present invention, and it should be understood that those skilled in the art can modify the invention described herein while still achieving the advantageous effects of the present invention. Therefore, the above description should be understood as being widely recognized by those skilled in the art, and is not intended to limit the invention, and any modifications made in accordance with the invention are within the scope of the invention.

Claims (10)

  1. 一种发光二极管，至少包括N型层、发光层和P型层，其特征在于：所述发光层为垒层、第一过渡层、阱层和第二过渡层组成的多量子阱周期结构，其中垒层、第一过渡层和第二过渡层中至少插入两个非均匀厚度的AlN薄层。A light emitting diode comprising at least an N-type layer, a light-emitting layer and a P-type layer, wherein the light-emitting layer is a multi-quantum well periodic structure composed of a barrier layer, a first transition layer, a well layer and a second transition layer, At least two thin layers of AlN having a non-uniform thickness are inserted into the barrier layer, the first transition layer and the second transition layer.
  2. 根据权利要求1所述的一种发光二极管，其特征在于：所述垒层、第一过渡层和第二过渡层中的任意一层至少插入两个AlN薄层。A light emitting diode according to claim 1, wherein at least one of said barrier layer, said first transition layer and said second transition layer is interposed with at least two thin layers of AlN.
  3. 根据权利要求1所述的一种发光二极管，其特征在于：所述垒层、第一过渡层和第二过渡层中的至少有两层各至少插入一个AlN薄层。The light emitting diode according to claim 1, wherein at least two of the barrier layer, the first transition layer and the second transition layer are each inserted with at least one thin layer of AlN.
  4. 根据权利要求1所述的一种发光二极管，其特征在于：所述垒层、第一过渡层和第二过渡层中的每层各至少插入一个AlN薄层。A light emitting diode according to claim 1, wherein at least one of the AlN thin layers is inserted into each of the barrier layer, the first transition layer and the second transition layer.
  5. 根据权利要求1所述的一种发光二极管，其特征在于：所述发光层的所有多量子阱周期结构均插入AlN薄层或者仅部分多量子阱周期结构插入AlN薄层。A light emitting diode according to claim 1, wherein all of the multiple quantum well periodic structures of the light emitting layer are inserted into the AlN thin layer or only a part of the multiple quantum well periodic structure is inserted into the AlN thin layer.
  6. 根据权利要求1所述的一种发光二极管，其特征在于：所述AlN薄层厚度为0.1nm～6nm，层数为2～10层。The light emitting diode according to claim 1, wherein the AlN thin layer has a thickness of 0.1 nm to 6 nm and a number of layers of 2 to 10 layers.
  7. 根据权利要求1所述的一种发光二极管，其特征在于：所述AlN薄层厚度沿着生长方向呈线性变化或非线性变化，变化趋势为逐渐减小或者逐渐增大，或者先增大后减小，或者先减小后增大。The light emitting diode according to claim 1, wherein the thickness of the AlN layer changes linearly or non-linearly along the growth direction, and the change trend is gradually decreasing or gradually increasing, or increasing first. Decrease, or decrease first and then increase.
  8. 根据权利要求1所述的一种发光二极管，其特征在于：所述AlN薄层的掺杂浓度为1×1016cm-3～1×1019cm-3。A light emitting diode according to claim 1, wherein said AlN thin layer has a doping concentration of 1 × 10 16 cm -3 to 1 × 10 19 cm -3 .
  9. 根据权利要求1所述的发光二极管，其特征在于：所述垒层AlxInyGa1-x-yN组成，其中0≤x≤1，0≤y≤1，0≤x+y≤1，所述阱层AlpInqGa1-p-qN组成，其中0≤p≤1，0≤q≤1，0≤p+q≤1。The light emitting diode according to claim 1, wherein said barrier layer Al x In y Ga 1-xy N is composed of 0 ≤ x ≤ 1 , 0 ≤ y ≤ 1, 0 ≤ x + y ≤ 1, The well layer Al p In q Ga 1-pq N is composed of 0 ≤ p ≤ 1 , 0 ≤ q ≤ 1 , 0 ≤ p + q ≤ 1.
  10. 根据权利要求1所述的发光二极管，其特征在于：所述第一过渡层由AlaInbGa1-a-bN组成，其中0≤a≤1，0≤b≤1，0≤a+b≤1，其禁带宽度的最大值不大于垒层材料的禁带宽度，最小值不小于阱层材料的禁带宽度，所述第二过渡层由AlcIndGa1-c-dN组成，其中0≤c≤ 1，0≤d≤1，0≤c+d≤1，其禁带宽度的最大值不大于垒层材料的禁带宽度，最小值不小于阱层材料的禁带宽度。 The light emitting diode according to claim 1, wherein said first transition layer is composed of A la I nbGa1-ab N, wherein 0 ≤ a ≤ 1, 0 ≤ b ≤ 1, 0 ≤ a + b ≤ 1 The maximum value of the forbidden band width is not greater than the forbidden band width of the barrier layer material, the minimum value is not less than the forbidden band width of the well layer material, and the second transition layer is composed of A lc I nd G a1-cd N, wherein 0 ≤ c ≤ 1, 0 ≤ d ≤ 1, 0 ≤ c + d ≤ 1, the maximum value of the forbidden band width is not greater than the forbidden band width of the barrier layer material, and the minimum value is not less than the forbidden band width of the well layer material.
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