WO2016065884A1 - Diode électroluminescente - Google Patents

Diode électroluminescente Download PDF

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Publication number
WO2016065884A1
WO2016065884A1 PCT/CN2015/078571 CN2015078571W WO2016065884A1 WO 2016065884 A1 WO2016065884 A1 WO 2016065884A1 CN 2015078571 W CN2015078571 W CN 2015078571W WO 2016065884 A1 WO2016065884 A1 WO 2016065884A1
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WO
WIPO (PCT)
Prior art keywords
layer
transition
emitting diode
transition layer
light emitting
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PCT/CN2015/078571
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English (en)
Chinese (zh)
Inventor
杜伟华
周启伦
伍明跃
李志明
寻飞林
郑锦坚
李水清
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厦门市三安光电科技有限公司
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Publication of WO2016065884A1 publication Critical patent/WO2016065884A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier

Definitions

  • the present invention relates to a semiconductor device, and more particularly to a light emitting diode of a multiple quantum well periodic structure of a group III nitride.
  • Light-emitting diodes have the advantages of high electro-optical conversion efficiency, long service life, environmental protection, energy saving, etc., and have been recognized as the third generation of illumination sources.
  • GaN-based epitaxial wafers are the core components of LEDs and determine the performance of LED products. Luminous efficiency has become a bottleneck affecting the performance of LEDs, affecting the use of products. Therefore, reducing the polarization charge between the barrier layers, weakening the energy band tilt, and improving the luminous efficiency of the device have become hot topics in current research.
  • Chinese patent CN201110258718 "A method for improving the luminous efficiency of LEDs" by growing barrier layers of different thicknesses, by thickening the thickness of the barrier layer close to the N-type layer, reducing the thickness of the barrier layer close to the P-type layer, and improving the recombination of electron holes Efficiency to improve luminous efficiency.
  • the structure described in this scheme has a limited increase in luminous efficiency. Therefore, it is necessary to provide a technical solution that can further reduce the polarization charge of the well barrier interface and improve the luminous efficiency.
  • the main technical solution provided by the present invention is: a light emitting diode comprising a substrate, a buffer layer, an N-type layer, a stress relief layer, a light-emitting layer, a P-type layer and a P-type contact layer in this order from bottom to top.
  • the light emitting layer is a multiple quantum well periodic structure of a barrier layer, a first transition layer, a well layer, and a second transition layer, wherein at least one barrier layer, the first transition layer, and the second transition layer comprise at least two non-uniform thicknesses Thin layer of AlN.
  • any one of the barrier layer, the first transition layer, and the second transition layer is inserted into at least two thin layers of AlN.
  • At least two of the barrier layer, the first transition layer, and the second transition layer are each inserted with at least one AlN thin layer.
  • At least one of the AlN thin layers is inserted into each of the barrier layer, the first transition layer, and the second transition layer.
  • the thickness variation of the AlN thin layer may vary linearly or nonlinearly along the growth direction, and the thickness gradually changes along the growth direction in the barrier layer, the first transition layer, and the second transition layer, and may be gradually reduced, or may be gradually decreased. Gradually increase, or increase first and then decrease, or decrease first and then increase.
  • the thickness of the AlN thin layer fluctuates in the range of 0.1 nm to 6 nm, and the number of layers is preferably 2 to 10 layers.
  • All of the multiple quantum well periodic structures of the luminescent layer are intercalated into the AlN thin layer or only a portion of the multiple quantum well periodic structure is inserted into the AlN thin layer.
  • the number of layers of the AlN thin layer may be the entire barrier layer of the light emitting layer and the first transition layer, the second transition layer or the partial barrier layer, and the first transition layer and the second transition layer thereof.
  • the doping level of the AlN thin layer is between 1 ⁇ 10 16 cm ⁇ 3 and 1 ⁇ 10 19 cm ⁇ 3 , and the doping concentration of the AlN thin layer in the barrier layer is not lower than the doping of the barrier layer.
  • the doping concentration in one of the transition layer and the second transition layer is not higher than the doping concentration of the barrier layer.
  • the number of cycles of the multiple quantum well structure of the light-emitting layer is n: 2 to 100, preferably 5 to 15.
  • the barrier layer of the multiple quantum well structure is composed of Al x In y Ga 1-xy N, where 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x+y ⁇ 1.
  • the thickness of the barrier layer may vary or may remain unchanged.
  • the well layer of the multiple quantum well structure is composed of Al p In q Ga 1-pq N, wherein 0 ⁇ p ⁇ 1, 0 ⁇ q ⁇ 1, 0 ⁇ p+q ⁇ 1, and the growth temperature thereof is not greater than that of the barrier layer
  • the growth temperature, the In composition of the quantum well layer should be no less than the In composition in the barrier layer, and the maximum value of the forbidden band width is not greater than the forbidden band width of the barrier layer material.
  • the first transition layer of the multiple quantum well structure is composed of Al a In b Ga 1-ab N, where 0 ⁇ a ⁇ 1, 0 ⁇ b ⁇ 1, 0 ⁇ a + b ⁇ 1, and the maximum band gap is The value is not greater than the forbidden band width of the barrier layer material, and the minimum value is not less than the forbidden band width of the well layer material.
  • the second transition layer of the multiple quantum well structure is composed of Al c In d Ga 1-cd N, where 0 ⁇ c ⁇ 1, 0 ⁇ d ⁇ 1, 0 ⁇ c+d ⁇ 1, and the maximum band gap is The value is not greater than the forbidden band width of the barrier layer material, and the minimum value is not less than the forbidden band width of the well layer material.
  • the material of the second transition layer may be the same as or different from the first transition layer.
  • the overlapping structure formed by the non-uniform thickness AlN thin layer and the barrier layer, the first transition layer and the second transition layer provided by the present invention can effectively modulate the polarization field of the quantum well region and reduce the barrier layer between the barrier layers.
  • the polarization charge reduces the energy band tilt and improves the radiation recombination efficiency of carriers in the quantum well region.
  • the high-concentration two-dimensional electron gas in the heterojunction interface formed by the AlN thin layer and the barrier layer, the first transition layer and the second transition layer can make the current distribution more uniform, thereby improving the reliability of the LED and Antistatic ability.
  • the thickness, the number of layers and the doping concentration of the AlN thin layer used in the present invention can be adjusted, and the optimization of the luminous efficiency of the light-emitting diodes of different wavelength bands can be optimized.
  • FIG. 1 is a cross-sectional view of a light emitting diode according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view showing a multiple quantum well structure of a light emitting diode according to an embodiment of the present invention.
  • FIG. 3 is a schematic diagram of control of a first form of a multiple quantum well structure according to an embodiment of the present invention.
  • FIG. 4 is a schematic diagram of control of a second form of a multiple quantum well structure according to an embodiment of the present invention.
  • FIG. 5 is a schematic diagram of a third form of control of a multiple quantum well structure according to an embodiment of the present invention.
  • FIG. 6 is a schematic diagram of a fourth form of control of a multiple quantum well structure according to an embodiment of the present invention.
  • the present invention provides a multi-quantum well structure light-emitting diode of a non-uniform thickness AlN thin layer, which includes, from bottom to top, in order:
  • a substrate 100 selected from sapphire (Al 2 O 3 ), SiC, GaN or Si, and a sapphire substrate is preferred in this embodiment.
  • a buffer layer 101 grown on the substrate 100 subjected to high temperature hydrogenation being gallium nitride (GaN) and/or aluminum nitride (AlN) and/or aluminum gallium nitride (GaAlN)
  • the layer has a growth temperature of 400 to 650 ° C and a thickness of 1 nm to 50 nm.
  • an N-type GaN layer 102 grown on the buffer layer 101 having a growth temperature of 1000 to 1200 ° C, a thickness of 500 nm to 5000 nm, and a doping concentration of 1 ⁇ 10 18 to 1 ⁇ 10 20 cm -3 , preferably 1 ⁇ 10 19 cm - 3 , and the doping source is preferably SiH4.
  • a stress releasing layer 103 which is located on the N-type GaN layer 102, preferably an InGaN/GaN layer, having a growth temperature of 700 to 1000 ° C and a thickness of 10 to 500 nm.
  • the multi-quantum well structure light-emitting layer 104 is formed by alternately stacking the periodic barrier layer 104a/first transition layer 104b/well layer 104c/second transition layer/104c, as shown in FIG. 2, the number of periods n: 2 ⁇ 100, preferably 5-15.
  • the thickness of the barrier layer 104a is 5 nm to 30 nm
  • the thickness of the first transition layer 104b is 0.5 nm to 10 nm
  • the thickness of the well layer 104c is 1 nm to 10 nm
  • the thickness of the second transition layer 104d is 0.5 nm to 10 nm.
  • the light emitting layer is a multiple quantum well periodic structure of the barrier layer, the first transition layer, the well layer, and the second transition layer.
  • two non-uniform thickness AlN thin layers are inserted in the barrier layer,
  • the thickness of the AlN thin layer in the barrier layer may gradually decrease along the growth direction, or may gradually increase, or first increase and then decrease, or decrease first and then increase.
  • the thickness of the AlN thin layer in the barrier layer gradually decreases along the growth direction.
  • the thickness of the AlN thin layer 104an in the barrier layer is 0.1 nm to 6 nm, and the number of layers is preferably 2 to 10 layers.
  • the thickness of the AlN thin layer 104bn in the first transition layer is 0.1 nm to 6 nm, and the number of layers is preferably 2 to 10 layers.
  • the thickness of the AlN thin layer 104dn in the second transition layer is 0.1 nm to 6 nm, and the number of layers is preferably 2-10 layers.
  • the insertion position of the AlN thin layer may be located in all or a part of the barrier layer of the light-emitting layer.
  • the change in the thickness of the AlN thin layer may vary linearly or non-linearly along the growth direction.
  • the doping level of the AlN thin layer in the barrier layer is between 1 ⁇ 10 16 and 1 ⁇ 10 19 cm ⁇ 3 , and the doping concentration is not lower than the doping of the barrier layer, and the first transition layer and the second transition layer are The doping concentration of the AlN thin layer is not higher than the doping concentration of the barrier layer, and the doping source is preferably SiH4.
  • the insertion positions of the AlN thin layers 104an, 104bn, 104dn in the barrier layer 104a, the first transition layer 104b, and the second transition layer 104d, respectively, are adjustable.
  • a P-type GaN layer 105 grown on the MQW light-emitting layer 103 having a growth temperature of 800 to 1000 ° C, a thickness of 10 nm to 300 nm, and a doping concentration of 1 ⁇ 10 19 to 1 ⁇ 10 21 cm -3 , preferably 1 ⁇ 10 20 cm -3 , and the doping source is preferably CP2Mg.
  • a P-type contact layer 106 grown on the P-type GaN layer 105 having a growth temperature of 800 to 1000 ° C, a thickness of 1 nm to 30 nm, and a doping concentration of 1 ⁇ 10 19 ⁇ 1 ⁇ 10 22 cm -3 , preferably 5 ⁇ 10 20 cm -3 , and the doping source is preferably CP2Mg.
  • a P electrode 108 which is formed on the P-type contact layer 106.
  • An insulating protective layer 109 is formed on the surface of the bare light emitting diode for protecting the light emitting diode.
  • step (5) Different from Embodiment 1 is the step (5).
  • a thin layer of AlN of a non-uniform thickness is inserted into each of the barrier layer and the first transition layer, and the AlN layer is in the barrier layer and the first transition.
  • the thickness in the layer gradually decreases along the growth direction.
  • the step (5) is as shown in FIG. 5, in which a thin layer of AlN having a non-uniform thickness is inserted in each of the barrier layer, the first transition layer, and the second transition layer.
  • the thickness of the AlN thin layer in the barrier layer, the first transition layer, and the second transition layer gradually decreases along the growth direction.
  • each of the barrier layers, the first transition layer, and the second transition layer are inserted.
  • Into two thin layers of AlN of non-uniform thickness In the thin layer of AlN, the thickness gradually decreases along the growth direction in the barrier layer, and the thickness gradually decreases along the growth direction in the first transition layer, and the thickness gradually increases along the growth direction in the second transition layer.
  • the above multiple quantum well structure light emitting diode adopts an overlapping structure formed by a non-uniform thickness of the AlN thin layer and the barrier layer, the first transition layer and the second transition layer, which can effectively modulate the polarization field of the quantum well region and reduce the barrier layer.
  • the polarization charge between the layers weakens the energy band tilt and improves the radiation recombination efficiency of the carriers in the quantum well region, thereby improving the luminous efficiency.
  • the heterojunction interface formed by the AlN thin layer and the barrier layer, the first transition layer and the second transition layer can have a high concentration of two-dimensional electron gas, which can make the current distribution more uniform, thereby improving the reliability and resistance of the LED. Static capacity.
  • the thickness, the number of layers and the doping concentration of the thin layer of AlN used in the invention can be adjusted, and the optimization of the luminous efficiency of the light-emitting diodes of different wavelength bands can be optimized.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

L'invention concerne une diode électroluminescente, comprenant au moins : une couche de type n (102), une couche électroluminescente (104) et d'une couche de type p (105). La couche électroluminescente (104) est une structure périodique à puits quantiques multiples d'une couche de barrière (104a), d'une première couche de transition (104b), d'une couche de puits (104c) et d'une seconde couche de transition (104d), et au moins deux couches minces (104an, 104bn, 104dn) d'AlN d'épaisseur non uniforme sont insérées dans la première couche de transition et la seconde couche de transition. La structure de superposition formée au moyen de la couche mince d'AlN avec la couche de barrière, la première couche de transition et la seconde couche de transition peut moduler efficacement le champ de polarisation de la zone de puits quantique, réduire la charge de polarisation entre le puits et la couche de barrière, et réduire une inclinaison d'une bande d'énergie, et améliorer le rendement de recombinaison de rayonnement d'un porteur de courant dans la zone de puits quantique.
PCT/CN2015/078571 2014-10-31 2015-05-08 Diode électroluminescente WO2016065884A1 (fr)

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CN201410600804.5A CN104319322B (zh) 2014-10-31 2014-10-31 一种发光二极管
CN201410600804.5 2014-10-31

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CN104319322B (zh) * 2014-10-31 2017-07-21 厦门市三安光电科技有限公司 一种发光二极管
CN106328785A (zh) * 2015-06-30 2017-01-11 南通同方半导体有限公司 一种可提高多量子阱复合效率的led外延结构
CN109346576B (zh) * 2018-09-28 2021-02-19 华灿光电（浙江）有限公司 一种发光二极管外延片及其制备方法
KR20230028451A (ko) * 2020-08-31 2023-02-28 시아먼 산안 옵토일렉트로닉스 테크놀로지 캄파니 리미티드 마이크로 발광 다이오드
CN116111015B (zh) * 2023-04-11 2023-07-18 江西兆驰半导体有限公司 一种多量子阱发光层、发光二极管外延片及其制备方法

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CN103489898A (zh) * 2012-06-13 2014-01-01 三星电子株式会社 半导体器件以及在该半导体器件中使用的超晶格层
CN103682000A (zh) * 2012-09-14 2014-03-26 台积固态照明股份有限公司 具有改进的效率和下降率的iii-v族化合物器件
CN103872198A (zh) * 2014-03-24 2014-06-18 天津三安光电有限公司 一种多量子阱结构及采用该结构的发光二极管
CN104319322A (zh) * 2014-10-31 2015-01-28 厦门市三安光电科技有限公司 一种发光二极管

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KR20130011374A (ko) * 2011-07-21 2013-01-30 주식회사 칩테크놀러지 자외선 발광 다이오드용 다중 양자 우물 및 그의 제조 방법
CN103500779B (zh) * 2013-09-03 2017-03-08 华灿光电股份有限公司 一种GaN基发光二极管外延片及其制作方法
CN104064646A (zh) * 2014-07-09 2014-09-24 天津三安光电有限公司 发光二极管

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103489898A (zh) * 2012-06-13 2014-01-01 三星电子株式会社 半导体器件以及在该半导体器件中使用的超晶格层
CN103682000A (zh) * 2012-09-14 2014-03-26 台积固态照明股份有限公司 具有改进的效率和下降率的iii-v族化合物器件
CN103872198A (zh) * 2014-03-24 2014-06-18 天津三安光电有限公司 一种多量子阱结构及采用该结构的发光二极管
CN104319322A (zh) * 2014-10-31 2015-01-28 厦门市三安光电科技有限公司 一种发光二极管

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