CN111223970B - light emitting device - Google Patents
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- CN111223970B CN111223970B CN201911176445.4A CN201911176445A CN111223970B CN 111223970 B CN111223970 B CN 111223970B CN 201911176445 A CN201911176445 A CN 201911176445A CN 111223970 B CN111223970 B CN 111223970B
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 20
- 229910002601 GaN Inorganic materials 0.000 description 19
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- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Abstract
A light emitting device is provided. The light emitting device includes: an n-type contact layer including an AlGaN layer or an AlInGaN layer; a p-type contact layer including an AlGaN layer or an AlInGaN layer; an active region disposed between the n-type contact layer and the p-type contact layer and having a multi-quantum well structure, the active region of the multi-quantum well structure including well layers and barrier layers stacked on each other in an alternating manner, the well layers including electrons and holes existing according to probability distribution functions of the electrons and holes, wherein the barrier layers have a higher band gap than the well layers and are formed of AlInGaN or AlGaN and have an Al content of 10% -30%, the barrier layers prevent probability distributions of electrons and holes in the well layers adjacent to the barrier layers from overlapping each other, and at least one of the barrier layers has a higher Al content than the other barrier layer; an n-electrode disposed on the n-type contact layer; and a p-electrode disposed on the p-type contact layer.
Description
The application relates to a divisional application of a patent application with the application date of 2015, 7, 29, 201510455286.7 and entitled ultraviolet light emitting diode.
Technical Field
Exemplary embodiments relate to UV light emitting diodes. More particularly, exemplary embodiments relate to UV light emitting diodes with improved internal quantum efficiency. More particularly, exemplary embodiments relate to UV light emitting diodes having improved electron and hole recombination efficiency in an active region.
Background
In general, gallium nitride (GaN) -based semiconductors are widely used in UV, blue/green light emitting diodes or laser diodes, which are used as light sources in many applications including full color displays, traffic signs, general lighting and optical communication devices. Such a GaN-based light emitting diode includes an InGaN-based active layer having a multiple quantum well structure between an n-type GaN-based semiconductor layer and a p-type GaN-based semiconductor layer.
Fig. 1 is a schematic cross-sectional view of a typical light emitting diode, and fig. 2 is an enlarged cross-sectional view of an active region of the light emitting diode of fig. 1.
Referring to fig. 1 and 2, the light emitting diode includes a substrate 11, a three-dimensional growth layer 13, an n-type contact layer 15, an active region 17, a p-type contact layer 19, an n-electrode 10, and a p-electrode 20. In such a typical light emitting diode, an active region 17 having a multi-quantum well structure is provided between the n-type contact layer 15 and the p-type contact layer 19 to improve light emission efficiency, and light having a desired wavelength can be emitted by adjusting the In content of the InGaN well layer In the multi-quantum well structure.
On the other hand, gaN has a band gap of about 3.42eV, which corresponds to the energy of light with a wavelength of about 365 nm. Therefore, the light emitting diode using GaN or InGaN in the well layer emits blue light or UV light having a wavelength of about 400nm or more in consideration of light emission efficiency due to a difference in band gap between the well layer and the barrier layer. In order to provide a light emitting diode emitting UV light having a wavelength of 400nm or less, it is necessary to increase band gaps of the well layer and the barrier layer, and thus a well layer formed by adding Al to GaN or InGaN is used (see korean patent publication No. 10-2012-01299449A).
In an active region including a well layer composed of InGaN and emitting light having a wavelength of 400nm or more, there is a large difference in band gap between a GaN or InGaN barrier layer and the well layer, thereby providing high quantum efficiency within the well layer. However, in order to improve quantum efficiency in an active region including a well layer having a band gap capable of emitting light having a wavelength of 400nm or less by adding Al to GaN or InGaN, the barrier layer must have a higher band gap.
Referring again to fig. 2, in the active region 17 of a typical light emitting diode, the barrier layer 17b has a greater thickness than the well layer 17 w. This structure is designed to improve the light emitting efficiency by maximizing the recombination rate between holes and electrons in the well layer 17 w. More specifically, the well layers and the barrier layers are stacked on each other in at least one pair in an alternating manner. When electrons and holes are injected into the well layer and confined therein, each of the electrons and holes cannot be regarded as a single particle. That is, electrons and holes confined in the well layer are randomly present in the quantum well structure according to their probability distribution function. The probability distribution functions of electrons and holes can be represented by a distribution curve according to the uncertainty principle and according to the existence probability. Accordingly, although electrons and holes are injected into the well layer in the active region, the electrons and holes may exist in the blocking layer according to their probability distribution function.
In addition, electrons and holes injected into each of the well layers adjacent to the barrier layer interposed therebetween are also distributed according to their probability distribution functions, and there is a possibility that electrons and holes migrate to the adjacent well layers and the well layers into which electrons and holes are directly injected. The probability distribution functions of electrons and holes in adjacent well layers overlap each other randomly, and the thinner the barrier layer thickness, the higher the degree of overlap between the probability distribution functions of electrons and holes in adjacent well layers. This phenomenon in which probability distribution functions of electrons and holes contained in adjacent well layers overlap with each other is called overlap of probability distribution functions.
The higher the overlap of the probability distribution functions means the higher the possibility of migration of electrons and holes into the adjacent well layers, and thus the possibility of recombination of electrons and holes is reduced, thereby reducing the internal quantum efficiency. Therefore, in order to increase internal quantum efficiency, the barrier layer must have a sufficient thickness or a high band gap to block migration of electrons and/or holes into the adjacent well layer.
In the related art, the blocking layer is formed to have a specific thickness to block migration of electrons and holes into an adjacent well layer. That is, the thickness of the barrier layer is set to be greater than or equal to a thickness such that probability distribution functions of electrons and holes of the well layer adjacent to the barrier layer do not overlap with each other. The thickness of the barrier layer such that probability distribution functions of electrons and holes of the well layer adjacent to the barrier layer do not overlap each other may be referred to as skin depth (skin depth) of the barrier layer. As the band gap difference between the well layer and the barrier layer becomes larger and the well layer thickness increases, the skin depth of the barrier layer becomes smaller. For example, in an active region having a structure In which a GaN barrier layer is formed on an InGaN well layer containing 15% In and having a thickness of 2nm to 3nm to emit light having a wavelength of between about 460nm to about 440nm, the well layer may have a thickness of about 10nm to 15nm since the barrier layer has a skin depth of about 5nm at a conduction band energy difference of 370meV between the well layer and the barrier layer.
Accordingly, in the related art, since the thickness of the barrier layer must be greater than or equal to the skin depth of the barrier layer, the barrier layer 17b has a thicker thickness. Accordingly, the barrier layer serves as a blocking barrier in the migration of electrons and holes to the respective well layers 17 w. Accordingly, the driving voltage of the light emitting diode increases, and electrons and holes are unevenly injected into the well layer, thereby causing deterioration of internal quantum efficiency.
Accordingly, there is a need to develop a light emitting diode that includes an active region in which the barrier layer has a thicker thickness and a higher band gap.
Disclosure of Invention
Exemplary embodiments of the present application provide a light emitting diode having a higher band gap to allow electrons and holes to uniformly migrate into respective well layers, thereby improving internal quantum efficiency.
Exemplary embodiments of the present application provide a UV light emitting diode in which a blocking layer does not block electrons and holes from being injected into a well layer, thereby enabling operation at a lower driving voltage.
Exemplary embodiments of the present application provide a UV light emitting diode in which a thickness of a blocking layer is smaller than a well layer while preventing probability distribution functions of electrons and holes of the well layer from overlapping each other in the blocking layer.
Exemplary embodiments of the present application provide a UV light emitting diode in which a blocking layer is thinner and has a higher band gap than a well layer, thereby preventing electrons and holes injected into each well layer from diffusing into an adjacent well layer.
Exemplary embodiments of the present application provide a UV light emitting diode in which a blocking layer has a thinner thickness than a well layer and a proper composition capable of solving the problem of migration of electrons and holes into an adjacent well layer.
According to one aspect of the present application, a UV light emitting diode may include: an n-type contact layer including an AlGaN layer or an AlInGaN layer; a p-type contact layer including an AlGaN layer or an AlInGaN layer; and an active region having a multiple quantum well structure interposed between the n-type contact layer and the p-type contact layer, wherein the active region having the multiple quantum well structure includes well layers and barrier layers stacked on each other in an alternating manner, and the well layers include electrons and holes existing according to probability distribution functions thereof. Here, the barrier layer is formed of AlInGaN or AlGaN and the Al content is 10% -30%; at least one of the barrier layers disposed between the well layers has a smaller thickness than one of the well layers; the thickness and band gap of at least one of the barrier layers disposed between the well layers prevents electrons and holes injected into and confined in the well layer adjacent to the barrier layer from diffusing into another adjacent well layer.
The barrier layer may have an Al content of 10% -30% and an In content of 0-5%, and the well layer may have an Al content of less than 1% and an In content of 0-10%. At least one of the barrier layers disposed between the well layers has a smaller thickness than one of the well layers.
The thickness of at least one of the barrier layers may be 50% to less than 100% of the thickness of one of the well layers.
At least one of the barrier layers may have a thickness of 2nm-3nm and one of the well layers may have a thickness of greater than 3nm-4nm.
Further, among the barrier layers, two barrier layers adjacent to the n-type contact layer and the p-type contact layer may have a greater thickness than the well layer. With this structure, the migration of electrons and holes can be easily performed in the active region having the multiple quantum well structure, and the number of electrons and holes exiting the active region can be reduced.
In addition, the light emitting diode may further include at least one electronic control layer interposed between the n-type contact layer and the active region. Here, the electronic control layer may be formed of AlInGaN or AlGaN, and may contain Al in a larger amount than the number of adjacent layers.
In some embodiments, the p-type contact layer may include a lower high-concentration doped layer, an upper high-concentration doped layer, and a low-concentration doped layer interposed between the lower high-concentration doped layer and the upper high-concentration doped layer.
The thickness of the low-concentration doped layer may be greater than the lower and upper high-concentration doped layers.
In addition, the n-type contact layer may include a lower gallium nitride (GaN) layer, an upper aluminum gallium nitride (AlGaN) layer, and an intermediate layer of a multi-layer structure interposed between the lower GaN layer and the upper AlGaN layer.
The intermediate layer having a multi-layer structure may have a structure formed by alternately stacking AlGaN layers and GaN layers.
The light emitting diode may further include a superlattice layer interposed between the n-type contact layer and the active region; and an electron injection layer interposed between the superlattice layer and the active region, wherein the electron injection layer may have a higher n-type impurity doping concentration than the superlattice layer.
The superlattice layer may have a structure formed by alternately stacking the first AlInGaN layer and the second AlInGaN layer.
The electron injection layer may be formed of AlGaN.
The light emitting diode may further include an undoped AlGaN layer interposed between the n-type contact layer and the superlattice layer.
The light emitting diode may further include a low concentration AlGaN layer interposed between the undoped AlGaN layer and the superlattice layer and doped with n-type impurities at a lower concentration than the n-type contact layer; and a high concentration AlGaN layer interposed between the low concentration AlGaN layer and the superlattice layer and doped with n-type impurities at a higher concentration than the low concentration AlGaN layer.
The n-type contact layer may include a modulation doped AlGaN layer.
In some embodiments, the active region of the multiple quantum well structure may emit UV light having a wavelength between 360-405 nm.
Embodiments of the present application provide a UV light emitting diode in which a blocking layer has a thinner thickness and a higher band gap than a well layer to prevent electrons and holes injected into the well layer and confined in the well layer from diffusing therethrough into an adjacent well layer, thereby reducing a driving voltage of the UV light emitting diode while improving internal quantum efficiency.
Drawings
The accompanying drawings, which are included to provide a further understanding of the concepts of the present application and are incorporated in and constitute a part of this specification, illustrate exemplary embodiments of the concepts of the present application and together with the description serve to explain the principles of the present application.
Fig. 1 is a schematic cross-sectional view of a typical light emitting diode.
Fig. 2 is an enlarged cross-sectional view of an active region of the light emitting diode of fig. 1.
Fig. 3 is a cross-sectional view of a UV light emitting diode according to an exemplary embodiment of the present application.
Fig. 4 is a cross-sectional view of a multiple quantum well structure of a UV light emitting diode according to an exemplary embodiment of the present application.
Fig. 5 is a cross-sectional view of a UV light emitting diode including an electrode according to an exemplary embodiment of the present application.
Fig. 6a and 6b are Transmission Electron Microscope (TEM) micrographs of a typical UV light emitting diode and a multiple quantum well structure of the UV light emitting diode according to an exemplary embodiment of the present application, respectively.
Fig. 7 is a graph depicting the intensity of light emitted by a typical UV light emitting diode and a UV light emitting diode according to an exemplary embodiment of the present application.
Detailed Description
Hereinafter, exemplary embodiments of the present application will be described in detail with reference to the accompanying drawings. The following exemplary embodiments are provided by way of example to fully convey the spirit of the application to those skilled in the art to which the application pertains. Accordingly, the present application is not limited to the embodiments disclosed herein, but may be embodied in various forms. In the drawings, the widths, lengths, thicknesses, etc. of elements may be exaggerated for clarity and convenience of description. When an element or layer is referred to as being "disposed" or "disposed" on another element or layer, it can be directly disposed or "disposed" on the other element or layer or intervening elements may be present. Throughout the specification, like reference numerals indicate like elements having the same or similar functions. On the other hand, the content of the metal element (Al or In) expressed In percent herein is the composition ratio In percent of the metal element In the gallium nitride base layer as compared to all the metal elements. That is, with Al x In y Ga z The Al content of the gallium nitride base layer represented by N can be calculated as 100 x/(x+y+z) and expressed in%.
FIG. 3 is a cross-sectional view of a UV light emitting diode according to an exemplary embodiment of the application; fig. 4 is a cross-sectional view of a multiple quantum well structure of a UV light emitting diode according to an exemplary embodiment of the present application.
Referring to fig. 3, the UV light emitting diode according to an exemplary embodiment of the present application includes an n-type contact layer 27, an active region 39, and a p-type contact layer 43. In addition, the UV light emitting diode may include a substrate 21, a buffer layer 23, a three-dimensional growth layer 25, an electron injection layer 37, an electron blocking layer 41, or a delta doping layer 45.
The substrate 21 is a substrate for growing a gallium nitride-based semiconductor layer thereon, and may be any substrate such as a sapphire substrate, a SiC substrate, a spinel substrate, or the like. For example, the substrate 21 may be a Patterned Sapphire Substrate (PSS).
The buffer layer 23 may be formed of (Al, ga) N (e.g., gaN or AlGaN) at a low temperature of 400-600 deg.c in order to grow the three-dimensional growth layer 25 on the substrate 21. The buffer layer 23 may be formed to be about 25nm thick. A three-dimensional growth layer 25 is located between the substrate 21 and the n-type contact layer 27 to mitigate generation of dislocation defects and the like, and is grown at a relatively high temperature of 700 c to 900 c. The three-dimensional growth layer 25 may be formed of undoped GaN to 1 μm-2 μm, for example.
The n-type contact layer 27 may be formed as a gallium nitride-based semiconductor layer doped with an n-type impurity (e.g., si), and may be formed to be, for example, about 1 μm to about 3 μm thick. The n-type contact layer 27 may be composed of AlGaN having an Al content of 2% -10% (higher than its neighboring layers), and may be formed in a single layer or in a multi-layer form, in which an AlGaN layer or an AlInGaN layer having a thickness of 5nm to 30nm is formed as an intermediate layer. For example, as shown, the n-type contact layer 27 may include a lower AlGaN layer 27a, an intermediate layer 27b, and an upper AlGaN layer 27c. Here, the intermediate layer 27b may be formed of AlInN or AlN, and may be formed in the form of a multilayer structure (including a superlattice structure) in which AlInN or AlGaN and GaN are stacked in an alternating manner into, for example, 4-10 pairs. The lower AlGaN layer 27a may have a thickness of about 1.5 μm and the upper AlGaN layer 27c may have a thickness of about 1 μm. The upper AlGaN layer 27c may have an Al content of less than 10%, for example from about 2% to about 9%. On the other hand, the lower AlGaN layer may have a lower Al content than the upper AlGaN layer.
The intermediate layer 27b may have a smaller thickness than the upper AlGaN layer 27c, and may be formed to a total thickness of about 80 nm. The intermediate layer 27b is formed on the lower AlGaN layer 27a, and the upper AlGaN layer 27c is formed on the intermediate layer 27b, thereby improving the crystallinity of the upper AlGaN layer 27c. The intermediate layer suppresses cracking caused by lattice mismatch between the n-type contact layer 27 and the three-dimensional growth layer 25.
Specifically, the lower AlGaN layer 27a and the upper AlGaN layer 27c are 1E18/cm 3 Or higher high concentration of doped Si impurities. Intermediate partThe layer 27b may be doped at the same or higher concentration than the upper AlGaN layer 27c. For example, the intermediate layer 27b may be at 1E18/cm 3 Or higher high concentration of doped Si impurities. In addition, the upper AlGaN layer 27c may include a modulation doped layer formed by repeating doping and non-doping. The intermediate layer and the modulation doped layer enhance the horizontal dispersion of electrons. An n-electrode (49 a in fig. 7) contacting the n-type contact layer 27 may contact the upper AlGaN layer 27c. Specifically, in the process of manufacturing the vertical light emitting diode by removing the substrate 21, the substrate 21 is removed by irradiating a laser beam to the three-dimensional growth layer 25 (laser lift-off), a supporting substrate may be formed on the upper side of the p-type contact layer, and the lower AlGaN layer 27a and the intermediate layer 27b may be removed by wet etching with KOH or NaOH solvent.
The electron control layer 28 has a higher Al content than the n-type contact layer 27 to block electrons from flowing from the n-type contact layer 27 to the active region 39. Since the mobility of electrons is 10 to 100 times higher than that of holes, the recombination rate of electrons and holes can be improved by controlling the mobility of electrons and the mobility of holes to balance the mobility speeds of electrons and holes in the active region 39.
The anti-electrostatic discharge layer 30 is formed to mitigate electrostatic discharge shock by implementing a capacitor structure by inserting an undoped layer in the doped layer. The antistatic layer 30 may include an undoped AlGaN layer 29, a low concentration AlGaN layer 31, and a high concentration AlGaN layer 33. The undoped AlGaN layer 29 may be formed of undoped AlGaN, and may have a smaller thickness than the upper AlGaN 27C, for example, 80nm to 300nm. Since undoped AlGaN layer 29 has a higher resistivity than n-type contact layer 27, undoped AlGaN layer 29 constitutes a capacitance between n-type contact layer 27 and high concentration AlGaN layer 33. With this structure, the antistatic layer prevents damage to the active layer by relieving an impact caused by a reverse voltage formed by externally generated static electricity. The low concentration AlGaN layer 31 serves to regulate the operating voltage by reducing the resistance associated with electron injection via the undoped AlGaN layer 29.
The low concentration AlGaN layer 31 is located on the undoped AlGaN layer 29 and has a lower n-type impurity doping concentration than the n-type contact layer 27. Low concentration ofThe Si doping concentration of AlGaN layer 31 may be, for example, 5×10 17 /cm 3 -5×10 18 /cm 3 And may be formed to a smaller thickness than the undoped AlGaN layer 29, for example, 50nm to 120nm. On the other hand, the high-concentration AlGaN layer 33 is located on the low-concentration AlGaN layer 31, and the n-type impurity thereof is doped at a higher concentration than the low-concentration AlGaN layer 31. The high concentration AlGaN layer 33 may have substantially the same Si doping concentration as the n-type contact layer 27. The high concentration AlGaN layer 33 may have a smaller thickness than the low concentration AlGaN layer, for example, about 20nm to about 40nm.
The n-type contact layer 27, the electronic control layer 28, the undoped AlGaN layer 29, the low concentration AlGaN layer 31, and the high concentration AlGaN layer 33 can be continuously grown by supplying a metal source gas to the growth chamber. The raw materials for the metal source gas may include organic materials of Al, ga, and In, such as TMAl, TMGa, TEGa and/or TMIn. SiH (SiH) 4 Can be used as a source gas for Si. These layers may be grown at a first temperature (e.g., 1050 ℃ -1150 ℃).
An electronic control layer 34 is located on the antistatic layer 30. Specifically, the electronic control layer 34 adjoins the high-concentration AlGaN layer 33. The electronic control layer 34 has a higher Al content than the antistatic discharge layer 30, and may be formed of AlGaN or AlInGaN. For example, the electronic control layer 34 may have an Al content of 10% -30% and an In content of 0% -5%. The electronic control layer 34 may have a thickness of about 1nm-10 nm.
The electron control layer 34 has a higher Al content than the antistatic layer 30 in order to block electrons from flowing from the n-type contact layer 27 to the active region 39. With this structure, the electron control layer 34 enhances the recombination rate of electrons and holes in the active region 39 by controlling the electron mobility.
The superlattice layer 35 is located on the electronic control layer 34. About 30 pairs may be formed by alternately stacking first AlInGaN layers and second AlInGaN layers having different compositions such that each of the first and second AlInGaN layers has, for exampleTo form the superlattice layer 35. The first AlInGaN layer and the second AlInGaN layer have a higher ratio than in the active region 39Higher bandgap of the well layer 39w (fig. 2). The first AlInGaN layer and the second AlInGaN layer have a lower In content than the well layer 39w. However, it should be understood that the present application is not limited thereto. That is, at least one of the first AlInGaN layer and the second AlInGaN layer may have a higher In content than the well layer 39w. For example, one of the first AlInGaN layer and the second AlInGaN layer may have an In content of about 1% higher than the other AlInGaN layer, and may have an Al content of about 8%. The superlattice layer 35 may be formed as an undoped layer. When the superlattice layer 35 is an undoped layer, current leakage of the light emitting diode may be reduced.
Since the superlattice layer 35 has an average value of the total lattice parameter corresponding to the intermediate value of the well layer of the active region, the superlattice layer 35 may function as a lattice mismatch relief layer with respect to the active region formed thereon, thereby improving internal quantum efficiency by reducing the piezoelectric effect formed due to lattice mismatch between the active region and other layers.
The n-type impurity of the electron injection layer 37 has a higher doping concentration than the superlattice layer 35. In addition, the electron injection layer 37 may have the same or higher n-type impurity concentration than the n-type contact layer 27. For example, the electron injection layer 37 may have 2×10 18 /cm 3 -2×10 19 /cm 3 Preferably 1X 10 19 /cm 3 -2×10 19 /cm 3 N-type impurity doping concentration of (c). The electron injection layer 37 may have a thickness similar to or smaller than the high concentration AlGaN layer 33. For example, the electron injection layer 37 may have a thickness of about 20nm to about 100 nm. The electron injection layer 37 may be formed of, for example, alInGaN, and may have an In content of 0-5% In order to improve electron mobility.
Active region 39 may be located on electron injection layer 37. Fig. 4 is an enlarged cross-sectional view of active region 39.
Referring to fig. 4, the active region 39 has a multiple quantum well structure including barrier layers 39b and well layers 39w stacked on each other in an alternating manner. The well layer 39w may have a composition capable of emitting UV light of 400nm or less. For example, the well layer 39w may be formed of GaN, inGaN, or AlInGaN. When the well layer 39w is formed of InGaN, the In content of the well layer may be determined according to a desired wavelength of UV light. For example, the well layer 39w may have an In content of about 5% or less. Each of the well layers 39w may have a thickness of about 3nm to about 4nm. Electrons and holes may be injected into each of the well layers. Thus, when electrons and holes injected into the well layer are confined therein, each of the electrons and holes cannot be regarded as a single particle. That is, electrons and holes confined in the well layer exist randomly within the quantum well structure according to a probability distribution function.
The barrier layer 39b may be formed of a gallium nitride-based semiconductor having a higher band gap than the well layer, such as AlGaN or AlInGaN, and may be made of Al x In y Ga 1-x-y N (x is more than or equal to 0 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 1). Specifically, the barrier layer 39b may have an In content of 1% or less to alleviate lattice mismatch between the well layer 39w and the barrier layer 39b, while preventing deterioration of the barrier layer crystallinity by increasing the Al content. On the other hand, the barrier layer may have a lower In content than the well layer. In this embodiment, the blocking layer 39b may be formed of AlGaN or AlInGaN. At this time, the barrier layer 39b may have an Al content of 10% -30%. In addition, each of the barrier layers 39b may have a thickness of 2nm-3 nm. In addition, the thickness of each of the barrier layers 39b may be 50% to less than 100% of the thickness of each of the well layers 39w. The thickness of the barrier layer 39b is inversely proportional to the Al content. That is, when the barrier layer has an Al content of 30%, even the barrier layer 39b having a thickness of 2nm can prevent probability distribution functions of electrons and holes in the well layer adjacent to the barrier layer 39b from overlapping each other.
In addition, at least one of the barrier layers 39b may have a different thickness from other barrier layers, and among the plurality of barrier layers 39b, one barrier layer may have a higher Al content and a smaller thickness than the other barrier layer. That is, the barrier layer 39b may have a different thickness and a different band gap.
The barrier layer 39b may have an Al content of 10% -30% and thus have a higher band gap than the well layer 39w. Thus, according to this exemplary embodiment, although the barrier layer 39b has a smaller thickness than the well layer 39w, it is possible to ensure a barrier layer skin depth sufficient to prevent probability distribution functions of adjacent well layers 39w from overlapping each other. Accordingly, the UV light emitting diode according to the exemplary embodiment of the present application may improve internal quantum efficiency while reducing a driving voltage.
Referring again to fig. 3, a p-type contact layer 43 may be disposed on the active region 39, and an electron blocking layer 41 may be disposed between the active region 39 and the p-type contact layer 43. The electron blocking layer 41 may be formed of AlGaN or AlInGaN by stacking layers a plurality of times. When the electron blocking layer 41 is formed of AlInGaN between the active region 39 and the p-type contact layer 43, lattice mismatch between the active region 39 and the p-type contact layer 43 can be further alleviated. At this time, the electron blocking layer 41 may have an Al content of, for example, about 40%. The electron blocking layer 41 may be doped with a p-type impurity (e.g., mg), or may be formed as an undoped layer. The electron blocking layer 41 may have a thickness of about 15 nm.
The P-type contact layer 43 may be formed of an AlGaN layer doped with Mg or an AlInGaN layer. For example, the p-type contact layer 43 may have an Al content of about 8% and a thickness of 50nm-100 nm. The P-type contact layer 43 may be composed of a single layer, but is not limited thereto. As shown, the p-type contact layer 43 may include a lower high-concentration doped layer 43a, a low-concentration doped layer (intermediate doped layer) 43b, and an upper high-concentration doped layer 43c. The low-concentration doped layer 43b has a lower doping concentration than the lower and upper high-concentration doped layers 43a, 43c, and is located between the lower high-concentration doped layer 43a and the upper high-concentration doped layer 43c. The low-concentration doped layer 43b may be grown by stopping the supply of Mg source gas (e.g., cp2 Mg). In addition, during the growth of the low-concentration doped layer 43b, the Mg content may be reduced using N2 gas as a carrier gas in addition to H2 gas. In addition, the low-concentration doped layer 43b may be formed to have a larger thickness than the lower and upper high-concentration doped layers 43a, 43c. For example, the low-concentration doped layer 43b may be formed to be about 60nm thick, and each of the lower and upper high-concentration doped layers 43a, 43c may be formed to be about 10nm thick. With this structure, loss of UV light due to the p-type contact layer 43 can be prevented or alleviated by improving the crystallinity of the p-type contact layer 43 while reducing the impurity concentration thereof.
On the other hand, delta blendingLayer 45 may be disposed on p-type contact layer 43 to reduce ohmic contact resistance. The delta doped layer 45 may be doped with n-type or p-type impurities at a high concentration to reduce ohmic resistance between an electrode formed thereon and the p-type contact layer 43. Delta-doped layer 45 may have aboutIs a thickness of (c).
Fig. 5 is a cross-sectional view of a UV light emitting diode including an electrode according to an exemplary embodiment of the present application. Fig. 5 shows a lateral light emitting diode formed by patterning an epitaxial layer grown on a substrate 21.
Referring to fig. 5, the light emitting diode includes a transparent electrode 47, an n-electrode 49a, and a p-electrode 49b in addition to the epitaxial layer and the substrate 21 described with reference to fig. 3.
The transparent electrode 47 may be formed of, for example, indium Tin Oxide (ITO). The p-electrode 49b is disposed on the transparent electrode 47. The n-electrode 49a contacts an exposed region of the n-type contact layer 27 formed by etching the epitaxial layer. Specifically, the n-electrode 49a contacts the upper surface of the upper AlGaN layer 27c. An electronic control layer 28 is placed on the n-type contact layer 27, and an n-electrode 49a contacts the n-type contact layer 27 and blocks electrons from flowing from the n-type contact layer 27 to the active region 39.
Although this embodiment is described with reference to a side-to-side light emitting diode, it should be understood that the application is not limited thereto. The flip-chip type light emitting diode may be manufactured by patterning an epitaxial layer grown on the substrate 21, or the vertical type light emitting diode may be manufactured by removing the substrate 21.
Fig. 6a and 6b show Transmission Electron Microscope (TEM) micrographs of a typical UV light emitting diode and a multiple quantum well structure of the UV light emitting diode according to an exemplary embodiment of the present application, respectively. Fig. 6a is a TEM micrograph of a multiple quantum well structure of a typical light emitting diode in the related art, and fig. 6b is a TEM micrograph of a multiple quantum well structure of a UV light emitting diode according to an exemplary embodiment of the present application.
Referring to fig. 6a and 6b, in the multi-quantum well structure of the typical light emitting diode of the related art, the well layer 17w has a thickness of about 3.2nm, and the barrier layer 17b has a thickness of about 4.9 nm. In contrast, in the multiple quantum well structure of the UV light emitting diode according to the exemplary embodiment of the present application, the well layer 39w has a thickness of about 3.7nm, and the blocking layer 39b has a thickness of about 2.9 nm.
Fig. 7 is a graph depicting the intensity of light emitted by a typical UV light emitting diode and a UV light emitting diode according to an exemplary embodiment of the present application. In fig. 7, a line a represents the intensity of light emitted by a typical UV light emitting diode, and a line b represents the intensity of light emitted by a UV light emitting diode according to an exemplary embodiment of the present application.
Referring to fig. 7, it can be seen that when the same driving current is applied to UV light emitting diodes having the same chip structure, the UV light emitting diodes according to the exemplary embodiments emit light having a higher intensity than that emitted by typical UV light emitting diodes. Assuming that the two UV light emitting diodes have the same light extraction efficiency because of the same chip structure, it can be confirmed that the UV light emitting diode according to the exemplary embodiment has improved internal quantum efficiency.
While the application has been described with reference to certain embodiments in conjunction with the drawings, it will be apparent to those skilled in the art that various modifications, alterations and substitutions can be made thereto without departing from the spirit and scope of the application. Accordingly, it should be understood that these examples and drawings should not be construed as limiting the application but are presented to provide those skilled in the art with a thorough understanding of the application. The scope of the application should be construed in accordance with the appended claims and all modifications and variations that may come within the meaning of the claims and their equivalents.
Claims (9)
1. A light emitting device, the light emitting device comprising:
an n-type contact layer including an AlGaN layer or an AlInGaN layer;
a p-type contact layer including an AlGaN layer or an AlInGaN layer;
an active region disposed between the n-type contact layer and the p-type contact layer and having a multiple quantum well structure including a well layer and a blocking layer stacked on each other in an alternating manner, the well layer including electrons and holes existing according to probability distribution functions of the electrons and holes,
wherein the barrier layer has a higher band gap than the well layer and is formed of AlInGaN or AlGaN and has an Al content of 10% -30%, prevents probability distributions of electrons and holes in the well layer adjacent to the barrier layer from overlapping each other, and
at least one of the barrier layers has a higher Al content and a smaller thickness than the other barrier layer;
an n-electrode disposed on the n-type contact layer; and
and a p-electrode disposed on the p-type contact layer.
2. The light-emitting device according to claim 1, wherein the well layer has an In content of 5% or less, the barrier layer has an In content of 1% or less, the In content of the barrier layer is smaller than the In content of the well layer, and the barrier layer is made of Al x In y Ga 1-x-y N is represented by 0.ltoreq.x.ltoreq.1, and 0.ltoreq.y.ltoreq.1.
3. The light emitting device of claim 1, further comprising:
at least one electronic control layer disposed between the n-type contact layer and the active region,
the electron control layer is formed of AlInGaN or AlGaN and has a higher Al content than the n-type contact layer.
4. The light emitting device of claim 1, further comprising:
the superlattice layer is arranged between the n-type contact layer and the active region; and
and an electron injection layer disposed between the superlattice layer and the active region, the electron injection layer having a higher n-type impurity doping concentration than the superlattice layer.
5. The light emitting device of claim 1, wherein the n-type contact layer comprises a modulation doped layer.
6. A light emitting device, the light emitting device comprising:
an n-type contact layer including an AlGaN layer or an AlInGaN layer;
a p-type contact layer including an AlGaN layer or an AlInGaN layer;
an active region disposed between the n-type contact layer and the p-type contact layer and having a multi-quantum well structure, the active region of the multi-quantum well structure including well layers and barrier layers stacked on each other in an alternating manner, the well layers including electrons and holes existing according to probability distribution functions of the electrons and holes, the barrier layers disposed between the well layers having a smaller thickness than each of the well layers, the thickness and band gap of at least one of the barrier layers disposed between the well layers preventing electrons and holes injected into the well layer adjacent to the barrier layer and restricting diffusion of the electrons and holes therein into another adjacent well layer, the barrier layers preventing probability distributions of the electrons and holes in the well layer adjacent to the barrier layer from overlapping each other, and the at least one of the barrier layers having a higher Al content and a smaller thickness than the other barrier layer.
7. The light emitting device of claim 6, wherein a thickness of the at least one of the barrier layers disposed between the well layers is 50% to less than 100% of a thickness of each of the well layers.
8. The light emitting device of claim 6, wherein the at least one of the barrier layers has a thickness of 2nm-3nm and each of the well layers has a thickness of 3nm-4nm.
9. The light emitting device of claim 6, wherein the well layer has an Al content of 5% or less, the barrier layer has an Al content of 10% -30%, and a thickness of the barrier layer in the active region is inversely proportional to its Al content.
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| CN201911176445.4A CN111223970B (en) | 2014-07-29 | 2015-07-29 | light emitting device |
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| CN103346217A (en) * | 2013-07-10 | 2013-10-09 | 合肥彩虹蓝光科技有限公司 | Method for designing quantum barrier used for enhancing light emitting diode (LED) brightness |
| CN203491287U (en) * | 2013-09-11 | 2014-03-19 | 惠州比亚迪实业有限公司 | LED (Light Emitting Diode) chip |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20160014416A (en) | 2016-02-11 |
| CN205004348U (en) | 2016-01-27 |
| CN105322064B (en) | 2019-12-20 |
| CN105322064A (en) | 2016-02-10 |
| CN111223970A (en) | 2020-06-02 |
| KR102246648B1 (en) | 2021-04-30 |
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