CN111863861B - Integrated photoelectronic chip structure with SBD and DUV LEDs and preparation method thereof - Google Patents

Integrated photoelectronic chip structure with SBD and DUV LEDs and preparation method thereof Download PDF

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CN111863861B
CN111863861B CN202010750824.6A CN202010750824A CN111863861B CN 111863861 B CN111863861 B CN 111863861B CN 202010750824 A CN202010750824 A CN 202010750824A CN 111863861 B CN111863861 B CN 111863861B
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algan
sbd
duv
ohmic electrode
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CN111863861A (en
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张紫辉
张丹扬
张勇辉
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Hebei University of Technology
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    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
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    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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    • Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]

Abstract

The invention relates to an integrated optoelectronic chip structure with both SBD and DUV LED structures and a preparation method thereof. The structure comprises n SBD devices arranged in a row, and n columns and m rows of DUV LEDs positioned below the SBD devices; the SBD and DUV LEDs are arranged in an array; the n SBD devices are connected in series, and an ohmic contact electrode at the right end is connected with a strip chip electrode on the ohmic contact electrode; the Schottky contact electrode at the left end is connected with the n-type ohmic electrode of the DUV LED right below the next row, and the p-type ohmic electrode of the DUV LED is connected with the n-type ohmic electrode of the adjacent DUV LED; the DUV LEDs in n columns and m rows are arranged in a serpentine shape and connected in series. The invention can change the Alternating Current (AC) of the commercial circuit voltage of 220V into the pulse Direct Current (DC) by utilizing the unidirectional conductivity of the SBD structure, thereby realizing the direct power supply of the commercial circuit voltage to the device, reducing the heat emission of the DUV LED by the pulse direct current, prolonging the service life, and having simple manufacturing process, easy operation, strong repeatability and low production cost.

Description

Integrated photoelectronic chip structure with SBD and DUV LEDs simultaneously and preparation method thereof
Technical Field
The invention relates to the technical field of light-emitting diode semiconductors, in particular to an integrated optoelectronic chip with Schottky (SBD) and deep ultraviolet light-emitting diode (DUV LED) structures and a preparation method thereof.
Background
Nowadays, third generation wide bandgap semiconductor materials represented by gallium nitride (GaN) and silicon carbide (SiC) become hot spots for research in many modern industrial fields around the world due to their excellent photoelectric characteristics and wide application prospects. The third generation wide bandgap semiconductor material has the advantages of large bandgap width, high mobility, strong radiation resistance and the like, so the third generation wide bandgap semiconductor material has wide application space in the fields of semiconductor luminescence, electronic and electric devices, remote sensing detection, visible light communication and the like.
Compared with a mercury-based deep ultraviolet light source, the AlGaN-based deep ultraviolet LED has a low working voltage, generally between 3 and 5V, and generally adopts a Direct Current (DC) power supply mode, which is one of the great advantages of the deep ultraviolet LED. With the popularization and wide application of the LED, if the chip wants to be directly supplied with mains voltage (220V), the circuit must be connected with an LED driver (a transformer and an AC-DC converter); although the conventional LED driver can supply the LED with the mains voltage, the conventional LED driver is relatively complex in circuit and also increases additional cost. (the LED driver is a packaged power supply adjusting electronic device for driving the LED to emit light, the interior of the power supply adjusting electronic device is a circuit formed by combining a plurality of resistors, capacitors, inductors and Schottky diodes, different types of LED drivers are required to be selected for driving different LEDs, the internal circuit of the driver is also different), a rectifier or a rectifier bridge is connected into the circuit (the working principle is that alternating current is changed into direct current, the rectifier is made of a vacuum tube, an ignition tube, a solid silicon semiconductor diode, a mercury arc and the like, the rectifier is a packaged alternating current-direct current device, the rectifier bridge is a bridge circuit formed by a plurality of rectifier diodes, as shown in figure 13, a bridge rectifier circuit is formed, but the rectifier or the rectifier bridge is a bridge circuit which is formed by simply changing the negative bias voltage of sine alternating current into the positive bias voltage (as shown in figure 10 (c)), so that the purpose of alternating current-direct current can be achieved, however, because the LED is always in a light-emitting state, the heat of the LED is increased, the efficiency of the device is reduced, and the service life of the device is shortened; the circuitry of this rectifier bridge is also more complex.
Disclosure of Invention
The invention aims to provide an integrated optoelectronic chip with SBD and DUV LED structures aiming at the problems that the current commercial circuit voltage (220V alternating current) can not directly supply power to a light-emitting diode, a DUV LED generates heat seriously and external quantum efficiency is easy to attenuate. The technical problems to be solved by the invention are as follows: an integrated optoelectronic chip having both SBD and DUV LED structures and a method for fabricating the same are provided. The device can change Alternating Current (AC) of 220V mains voltage into pulse Direct Current (DC) by utilizing the unidirectional conductivity of an SBD structure, and the pulse direct current not only can directly supply power to the light-emitting diode, but also can reduce the heating of the diode and prolong the service life of the diode.
The technical scheme adopted by the invention for solving the technical problem is as follows:
an integrated optoelectronic chip structure with both SBD and DUV LED structures comprises n SBD devices arranged in a row, and n columns and m rows of DUV LEDs below the SBD devices; the SBD and DUV LEDs are arranged in an array; wherein n is 1-25, and m is 4-50;
the n SBD devices are connected in series, and an ohmic contact electrode at the right end is connected with an upper strip-shaped chip electrode; the Schottky contact electrode at the left end is connected with the n-type ohmic electrode of the DUV LED right below the next row, and the p-type ohmic electrode of the DUV LED is connected with the n-type ohmic electrode of the adjacent DUV LED; the DUV LEDs in n rows and m rows are arranged in a snake shape and connected in series; the p-type ohmic electrode of the DUV LED at the tail end of the lowermost row is connected with the strip-shaped chip electrode at the lower part; the electrodes are connected through metal wiring, and the metal is Ni/Au, Cr/Au, Pt/Au or Ni/Al;
the SBD and the DUV LED share the same substrate and buffer layer;
in the DUV LED, an n-AlGaN layer, an intrinsic AlGaN layer and an n-AlGaN electron transmission layer are sequentially arranged on a buffer layer; the n-AlGaN electron transmission layer comprises an upper layer and a lower layer, wherein the upper layer is 80% of the projection area of the lower layer, and the thickness of the upper layer is 10% -25% of the thickness of the lower layer; the upper layer of the n-AlGaN electron transmission layer is sequentially covered with a multi-quantum well layer, a p-AlGaN electron barrier layer, a p-AlGaN/p-GaN hole injection layer and a current expansion layer; the current spreading layer is also partially covered with a p-type ohmic electrode, the p-type ohmic electrode is made of Ni/Au, Cr/Au, Pt/Au or Ni/Al, and the area of the p-type ohmic electrode is 5-100% of that of the current spreading layer; the exposed part of the upper surface of the lower layer of the N-AlGaN electron transmission layer is also partially covered with an N-type ohmic electrode, the N-type ohmic electrode is made of N-type ohmic electrodes Al/Au, Cr/Au or Ti/Al/Ti/Au, and the area of the N-type ohmic electrode is 5-95% of the area of the exposed part of the lower layer of the N-AlGaN electron transmission layer; the solar cell comprises an n-AlGaN layer, an intrinsic AlGaN layer, an n-AlGaN electron transmission layer, a multi-quantum well layer, a p-AlGaN electron blocking layer, a p-AlGaN/p-GaN hole injection layer, the side part of a current expansion layer, the exposed part of the upper surface of the current expansion layer and the exposed part of the lower layer of the n-AlGaN electron transmission layer are covered with an insulating passivation layer;
in the SBD, an n-AlGaN layer is arranged on a buffer layer, and 40-60% of the upper surface of the n-AlGaN layer is covered with an intrinsic AlGaN layer; 5% -100% of the exposed part of the n-AlGaN layer is covered with an ohmic electrode, the ohmic electrode is Al/Au, Cr/Au or Ti/Al/Ti/Au, 5% -100% of the intrinsic AlGaN layer 4 is covered with a Schottky contact electrode, and the Schottky contact metal electrode is made of Ni/Au.
The substrate is sapphire, SiC, Si, AlN, GaN or quartz glass; the difference of the substrate along the epitaxial growth direction can be divided into a polar plane [0001] substrate, a semipolar plane [11-22] substrate or a nonpolar plane [1-100] substrate;
the buffer layer is made of AlGaN and has a thickness of 10-50 nm;
the thickness of the n-AlGaN layer is 1-6 mu m;
the thickness of the intrinsic AlGaN layer is 1-5 mu m;
the thickness of the n-AlGaN electron transmission layer is 1-5 mu m;
the thickness of the multi-quantum well layer is 40 nm-300 nm;
the thickness of the p-AlGaN electronic barrier layer is 10 nm-20 nm;
the thickness of the p-AlGaN/p-GaN hole injection layer is 50 nm-500 nm;
the current expansion layer is made of ITO, Ni/Au, zinc oxide, graphene, aluminum or metal nanowires, and the thickness of the current expansion layer is 3-300 nm;
the insulating layer is made of SiO 2 、Ta 2 O 5 Or HfO 2 The thickness is 20 nm-200 nm.
The preparation method of the integrated optoelectronic chip structure simultaneously provided with the SBD and DUV LED structures comprises the following steps:
firstly, baking a substrate at 950-1400 ℃ in an MOCVD reaction furnace, removing foreign matters on the surface of the substrate, and then respectively growing a buffer layer, an n-AlGaN layer, an intrinsic AlGaN layer, an n-AlGaN electron transmission layer, an AlGaN/AlGaN multi-quantum well layer, a p-AlGaN electron barrier layer and a p-AlGaN/p-GaN hole injection layer;
secondly, evaporating a current expansion layer on the sheet grown in the first step;
thirdly, exposing the material obtained in the second step to the buffer layer through photoetching and deep etching to realize mutual isolation among the discrete devices;
fourthly, on the current expansion layer obtained in the second step, through photoetching and etching processes, for the DUV LED device, an n-AlGaN electron transmission layer is required to be exposed on one side of the device; for the SBD device, the intrinsic AlGaN layer and the n-AlGaN layer are exposed by the same etching method;
fifthly, on the basis of the fourth step, growing an insulating passivation layer with the thickness of 20-200nm by utilizing a PECVD technology;
sixthly, removing the insulating passivation layer covering the p-type ohmic electrode position and the n-type ohmic electrode position of the DUV LED device and the surfaces of the n-type ohmic contact electrode position and the Schottky contact electrode position of the SBD device through photoetching and wet etching technologies on the basis of the fifth step;
seventhly, manufacturing a p-type ohmic electrode and an n-type ohmic electrode of the DUV LED device and an n-type ohmic contact electrode and a Schottky contact electrode of the SBD device by utilizing photoetching and electron beam evaporation technology; while achieving interconnected metal electrodes between discrete devices.
Thus, the integrated optoelectronic chip with both SBD and DUV LED structures of the invention is prepared.
The raw materials of the integrated optoelectronic chip with both SBD and DUV LED structures can be obtained through a general approach, and the operation process in the preparation method is possessed by the technical personnel in the technical field.
The invention has the substantive characteristics that:
the invention provides an integrated optoelectronic chip with both an SBD structure and a DUV LED structure, which is realized based on a basic design idea of driving the DUV LED and utilizes the following characteristics of an SBD to drive the DUVLED.
The theoretical mechanism is as follows: because the SBD is unidirectional (i.e. the SBD is on when a forward voltage is applied, and the SBD is off when a reverse bias is applied), the forward bias in the ac will be retained when flowing through the SBD, the reverse bias in the ac will be filtered out by the SBD, and the ac will become an intermittent pulsed dc after passing through the SBD structure (as shown in fig. 10 (b)), and the intermittent pulsed dc can reduce the thermal effect of the DUV LED device and improve the lifetime of the device. On the other hand, when a reverse bias is applied to the circuit, the SBD can bear a larger reverse voltage compared with the DUV LED and is not easy to break down, and the SBD can play a role in protecting the DUV LED and the circuit, so that the durability of the chip is improved.
If a traditional LED driver is adopted to drive the DUV LED device, the cost is increased, and the cost of the circuit is increased to a certain extent by adopting different LED drivers according to different requirements; as shown in fig. 13: if a traditional rectifier bridge structure is adopted in a circuit, alternating current is converted into direct current after passing through the rectifier bridge structure, and compared with the proposed intermittent pulse power supply mode, the uninterrupted direct current power supply mode can cause the DUV LED device to generate heat seriously, and the service life of the device can be reduced to a certain extent. Compared with the traditional LED driver or a rectifier bridge, the integrated chip is simpler and more direct, and the cost can be reduced.
The invention has the beneficial effects that:
compared with the prior art, the invention has the following prominent substantive characteristics and remarkable progress:
(1) the traditional LED chip is powered by direct current voltage (DC), and the external bias voltage is very low under normal work, generally between 3 and 5V, and can not be directly powered by mains voltage (220V alternating current). In consideration of the popularization of future development of the LED, in order to directly supply the LED with the mains voltage, an LED driver must be connected to the circuit, which not only makes the circuit complicated, but also increases the cost. To solve this problem, we propose an integrated optoelectronic chip with both SBD and DUV LED structures that can be powered directly from mains voltage (220V). When the integrated optoelectronic chip is forward biased (i.e., the positive half cycle of the AC signal), the SBD is in a conducting state, and the DUV LED in series with the SBD is also in a conducting state, the integrated optoelectronic chip allows the transport of current and generates photons (i.e., the LED is in a light emitting state); from a theoretical point of view, when a reverse bias is applied (i.e. another negative half cycle of the AC signal), the SBD is in the off state, and the entire series circuit is also in the off state, and there is no current in the circuit through the DUV LED, so the integrated optoelectronic chip does not generate photons (i.e. the LED does not emit light at this time). From a practical perspective, the SBD in the integrated optoelectronic chip is based on the AlGaN layer, and the layer has a large forbidden band width and a high critical electric field, so that when a reverse bias is applied, the SBD structure can bear a high breakdown voltage, and meanwhile, the leakage current is small and is not enough to cause the breakdown of the DUV LED, and devices in the circuit cannot be damaged, thereby playing a role in protecting the whole circuit.
(2) And when the mains voltage (220V alternating current) is rectified into discontinuous pulse direct current after SBD [ as shown in figure 10(b), the negative bias of the alternating current is filtered out ], when a forward bias is applied, the DUV LED is in a conducting state and emits light, when no bias is applied, the DUV LED is extinguished, and the DUV LED is not always in a conducting state. (if the LED is driven by a traditional LED driver, the LED is always in a state of conducting and emitting light, and the device can generate more heat, so that the working efficiency of the device can be influenced, and the service life of the device can be influenced to a certain extent). The structure of the invention can improve the performance of the device by one time and increase the service life of the device by one time.
(3) The integrated photoelectronic chip with the SBD and DUV LED structures has the advantages of simple manufacturing process, easy operation, strong repeatability and low production cost.
Drawings
The invention will be further described with reference to the accompanying drawings.
FIG. 1 is a schematic diagram of an integrated optoelectronic chip having both SBD and DUV LED structures according to the present invention.
FIG. 2 is a schematic view of an initial substrate structure of the present invention.
Fig. 3 is a schematic diagram of isolation of individual devices by photolithography and deep etching in accordance with the present invention.
FIG. 4 is a schematic diagram of one side of an n-AlGaN electron transport layer in a DUV LED exposed by photolithography and etching in accordance with the present invention.
Fig. 5 shows the intrinsic AlGaN layer of the SBD structure exposed by photolithography and etching in accordance with the present invention.
FIG. 6 shows one side of the n-AlGaN layer of the SBD structure exposed by photolithography and etching according to the present invention.
FIG. 7 illustrates the growth of an insulating passivation layer and insulating spacers by PECVD techniques in accordance with the present invention.
FIG. 8 illustrates the present invention with the insulating passivation layer covering the electrode sites of the DUV LED and SBD devices removed by photolithography and etching;
FIG. 9 is a diagram of the present invention illustrating the fabrication of DUV LED and SBD electrodes and the interconnection metal electrodes between discrete devices by photolithography and electron beam evaporation techniques;
fig. 10 is a schematic diagram of the operation of an integrated optoelectronic chip having both SBD and DUV LED structures according to the present invention, wherein fig. 10(a) is a circuit diagram of the method according to the present invention under AC operation, fig. 10(b) is a waveform diagram of driving voltage signals before and after filtering, and fig. 10(c) is a waveform diagram of driving voltage signals before and after rectification by using a conventional rectification structure.
FIG. 11 is a diagram of an integrated optoelectronic chip with both SBD and DUV LED structures, implemented by the above process, in the method of the present invention.
Fig. 12 is a device diagram of the series connection between SBDs, the series connection of DUV LEDs, and the connection of SBDs and DUV LEDs, which are finally formed through a series of process methods.
FIG. 13 is a block diagram of a bridge rectifier circuit according to the prior art;
FIG. 14 is a diagram of an array of SBD and DUV LEDs implemented by the present invention;
FIG. 15 is a graph of the IV characteristic curves for a single DUV LED and a device with both SBD and DUV LED structures under reverse bias; wherein, fig. 15(a) is an IV characteristic curve when a single DUV LED is applied with a reverse bias, and fig. 15(b) is an IV characteristic curve when a device having both SBD and DUV LED structures is applied with a reverse bias;
wherein, 1, a substrate; 2, a buffer layer; a 3, n-AlGaN layer; 4, an intrinsic AlGaN layer; a 5, n-AlGaN electron transport layer; 6, a multiple quantum well layer; a 7, p-AlGaN electron blocking layer; 8, p-AlGaN/p-GaN hole injection layer; 9, a current spreading layer; 10, p-type ohmic electrode of DUV LED; 11, n-type ohmic electrode of DUV LED; 11, n-type ohmic contact electrode of SBD; 12, schottky contact electrode of SBD.
Detailed Description
The present invention is further described with reference to the following examples and drawings, but the scope of the claims of the present application is not limited thereto.
The integrated optoelectronic chip structure with both the SBD and the DUV LED structures of the present invention is shown in fig. 14, and includes n SBD devices (n is 1 to 25) arranged in a row, and n columns m rows (m is 4 to 50) of DUV LEDs located below the SBD devices; the SBD and DUV LEDs are arranged in an array;
the n SBD devices are connected in series, and an ohmic contact electrode at the right end is connected with a strip chip electrode on the upper side; the Schottky contact electrode at the left end is connected with the n-type ohmic electrode of the DUV LED right below the next row, and the p-type ohmic electrode of the DUV LED is connected with the n-type ohmic electrode of the adjacent DUV LED; the DUV LEDs in n rows and m rows are arranged in a snake shape and connected in series; the p-type ohmic electrode of the DUV LED at the tail end of the lowermost row is connected with the strip-shaped chip electrode at the lower part; the electrodes are connected through metal, and the metal is Ni/Au, Cr/Au, Pt/Au or Ni/Al;
the SBD and the DUV LED share the same substrate and buffer layer 2;
as shown in FIG. 1, in the DUV LED, an n-AlGaN layer 3, an intrinsic AlGaN layer 4 and an n-AlGaN electron transport layer 5 are sequentially arranged on a buffer layer 2; the n-AlGaN electron transmission layer 5 comprises an upper layer and a lower layer, wherein the upper layer is 80% of the projection area of the lower layer, and the thickness of the upper layer is 10% -25% of the thickness of the lower layer; the upper layer of the n-AlGaN electron transmission layer 5 is sequentially covered with a multi-quantum well layer 6, a p-AlGaN electron barrier layer 7, a p-AlGaN/p-GaN hole injection layer 8 and a current expansion layer 9; the current spreading layer 9 is also partially covered with a p-type ohmic electrode 10, and the area of the p-type ohmic electrode 10 is 5-100% of that of the current spreading layer 9; the exposed part of the upper surface of the lower layer of the n-AlGaN electron transport layer 5 is also partially covered with an n-type ohmic electrode 11, and the area of the n-type ohmic electrode 11 is 5% -95% of the area of the exposed part of the lower layer of the n-AlGaN electron transport layer 5; the solar cell comprises an n-AlGaN layer 3, an intrinsic AlGaN layer 4, an n-AlGaN electron transport layer 5, a multiple quantum well layer 6, a p-AlGaN electron blocking layer 7, a p-AlGaN/p-GaN hole injection layer 8, the side part of a current expansion layer 9, the exposed part of the upper surface of the current expansion layer 9 and the exposed part of the lower layer of the n-AlGaN electron transport layer 5 are covered with an insulating passivation layer;
in the SBD, an n-AlGaN layer 3 is arranged on a buffer layer 2, and 40-60% of the upper surface of the n-AlGaN layer 3 is covered with an intrinsic AlGaN layer 4; 5% to 100% of the exposed portion of the n-AlGaN layer 3 is covered with the n- type ohmic electrode 11, and 5% to 100% of the intrinsic AlGaN layer 4 is covered with the schottky contact electrode 12.
That is, in fig. 1, a deep ultraviolet light emitting diode device (DUV LED) includes, in order along an epitaxial growth direction: the solar cell comprises a substrate 1, a buffer layer 2, an n-AlGaN layer 3, an intrinsic AlGaN layer 4, an n-AlGaN electron transmission layer 5, a multi-quantum well layer 6, a p-AlGaN electron barrier layer 7, a p-AlGaN/p-GaN hole injection layer 8, a current expansion layer 9, a p-type ohmic electrode 10 and an n-type ohmic electrode 11; the SBD device comprises a substrate 1, a buffer layer 2, an n-AlGaN layer 3, an intrinsic AlGaN layer 4, an n-type ohmic contact electrode 11, and a schottky contact electrode 12 in sequence along an epitaxial direction (the device structure in the left frame of fig. 1 is a DUV LED, and the device structure in the right frame is an SBD).
Fig. 2 is an initial substrate grown by MOCVD technique, and the finished chip shown in fig. 1 is realized by a series of technical means on the basis of the initial substrate.
Fig. 3 shows that the individual devices are isolated by etching to the position of the buffer layer 2 on the initial substrate of fig. 2 by means of photolithography and etch back processes.
Fig. 4 shows that after the device isolation of fig. 3, steps are formed by photolithography and dry etching processes to expose the n-AlGaN electron transport layer 5 on the DUV LED side.
Fig. 5 shows that after fig. 4 steps are made by photolithography and dry etching processes, exposing the entire device to the intrinsic AlGaN layer 4 for the SBD device.
Fig. 6 shows that, on the SBD device side realized in fig. 5, a step is formed by photolithography and dry etching processes and is exposed to the n-AlGaN layer 3.
Fig. 7 shows that an insulating passivation layer is grown on the substrate fabricated in fig. 6 using PECVD techniques.
Fig. 8 shows that the p-type ohmic electrode and the n-type ohmic electrode of the deep ultraviolet light emitting diode and the insulating passivation layer on the surface of the n-type ohmic electrode and the schottky contact electrode of the SBD device are etched by photolithography and wet etching techniques to prepare for the next step of manufacturing the electrodes.
Fig. 9 shows that electrodes of DUV LED devices and SBD devices, and interconnected metal electrodes between discrete devices are fabricated by photolithography and electron beam evaporation techniques on the basis of fig. 8.
In fig. 10, fig. 10(a) shows a circuit diagram under AC operation, fig. 10(b) is a waveform diagram of a driving voltage signal before filtering and after filtering, and fig. 10(c) is a waveform diagram of a driving voltage signal before and after rectifying by a conventional rectifying structure. The filtered driving voltage of fig. 10(b) is changed into an interrupted pulse dc, which, compared to the conventional rectified uninterrupted dc of fig. 10(c), supplies the DUV LED with the interrupted pulse dc, thereby reducing the thermal effect of the DUV LED structure, improving the device performance, and increasing the device lifetime.
Fig. 11 shows a schematic diagram of a structure of an integrated optoelectronic chip with both SBD and DUV LED structures realized by a process.
Fig. 12 shows a device diagram illustrating the series between SBDs, the DUV LED series, and the SBD and DUV LED connections that are ultimately formed.
Fig. 13 is a view showing a structure of a bridge rectifier circuit according to a conventional technique; based on the steps, the integrated optoelectronic chip provided by the invention and having the Schottky diode (SBD) and the deep ultraviolet light-emitting diode (DUV LED) at the same time can be manufactured, the integrated optoelectronic chip can be directly powered by the commercial line voltage (220V alternating current), an LED driver connected with the traditional circuit is omitted, the circuit is simplified, and the light-emitting efficiency and the reliability of the device are improved; in addition, by using the unidirectional conduction characteristic of the SBD, the integrated optoelectronic chip can realize the filtering effect on the AC signal (as shown in fig. 10(b), the negative bias of the sinusoidal alternating current is filtered, and only the positive bias is retained), that is, the driving mode under the pulse signal is indirectly realized, so that the heat generation of the LED can be reduced, the service life of the device is prolonged, and the popularization of the LED is facilitated.
When the integrated optoelectronic chip is under forward bias (i.e. the positive half cycle of the AC signal), the SBD is in a conducting state, and the DUV LED in series with the SBD is also in a conducting state, the integrated optoelectronic chip allows the transport of current and generates photons; from a theoretical point of view, when a reverse bias is applied (i.e., another negative half cycle of the AC signal), the SBD is in the off state, and the entire series circuit is open, with no current passing through the DUV LED, so the integrated optoelectronic chip does not generate photons. From the practical point of view, the SBD in the integrated optoelectronic chip is based on the AlGaN layer, the forbidden band width of the layer is large, the critical electric field is high, so the SBD can bear higher breakdown voltage, and the leakage current is small, so when the integrated optoelectronic chip is applied with reverse bias, the breakdown voltage of the DUV LED is not enough to be broken down (the breakdown voltage of the LED is much smaller than the SBD, so when the integrated optoelectronic chip is applied with reverse bias, the function of protecting the whole circuit is played (the reverse breakdown voltage of the DUV LED is very small compared with the SBD, so if the SBD does not bear higher reverse voltage in the circuit, the LED is very easy to break down, and the device is very easy to damage). The heating phenomenon of the LED can be reduced, the efficiency of the device is improved, and the service life of the device is prolonged.
Example 1
An integrated optoelectronic chip having both SBD and DUV LED structures, the chip having 6 SBD structures and 36 DUV LED structures (as shown in fig. 14), the DUV LED comprising in sequence along the epitaxial growth direction: substrate 1, bufferLayer 2, 30nm thick; an n-AlGaN layer 3 with a thickness of 1.5 μm; an intrinsic AlGaN layer 4 having a thickness of 1.5 μm; the electron transport layer 5 of n-AlGaN, wherein the electron transport layer 5 of n-AlGaN is divided into two parts, the lower floor thickness is 3 μm, the upper layer thickness is 0.5 μm, the upper layer is 80% of the lower floor projection area; the AlGaN/AlGaN multi-quantum well layer 6 has the thicknesses of 3nm and 10nm respectively, and 6 pairs of quantum wells and quantum barriers are formed; a p-AlGaN electron blocking layer 7 with the thickness of 15 nm; the p-AlGaN/p-GaN hole injection layer 8 is 250nm thick; a current spreading layer 9 having a thickness of 20 nm; the p-type ohmic electrode 10 and the n-type ohmic electrode 11 are arranged, wherein the p-type ohmic electrode 10 is positioned above the current spreading layer 9 and has the thickness of 200nm, and the area of the p-type ohmic electrode 10 is 50% of that of the current spreading layer 9; the n-type ohmic electrode 11 is positioned on the upper side of the exposed part of the n-AlGaN electron transport layer 5, the thickness of the n-type ohmic electrode is 200nm, and the area of the n-type ohmic electrode is 50% of that of the exposed part of the lower layer of the n-AlGaN electron transport layer 5; the SBD device sequentially comprises a substrate 1, a buffer layer 2, an n-AlGaN layer 3 and an intrinsic AlGaN layer 4 along the epitaxial direction, wherein the area of the intrinsic AlGaN layer 4 is 40% of the area of the n-AlGaN layer 3, a Schottky contact electrode 12 is positioned above the intrinsic AlGaN layer 4, the thickness of the Schottky contact electrode is 200nm, and the area of the Schottky contact electrode 12 is 50% of the area of the intrinsic AlGaN layer 4; the n-type ohmic contact electrode 11 was located on the upper side of the exposed portion of the n-AlGaN layer and had a thickness of 200 nm. With 150nm thick SiO between different devices 2 Insulating passivation layers, which are then interconnected by metal wiring, have a 10 μm spacing distance between the DUV LEDs and the SBD structure, between identical DUV LEDs, and between identical SBDs, i.e., the adjacent spacing between the arrays in fig. 14.
The size of each SBD was 50 μm x 50 μm; the size of the DUV LED is 350 μm x 350 μm;
the overall device size was 2300 μm x 2200 μm.
The P-type ohmic electrode of the DUV LED is made of Ni/Al, and the N-type ohmic electrode is made of Ti/Al/Ti/Au; the ohmic electrode of the SBD is made of Ti/Al/Ti/Au, and the Schottky contact electrode is made of Ni/Au.
The integrated optoelectronic chip with both the SBD and DUV LED structures comprises the following preparation methods:
in the first step, in an MOCVD reaction furnace, theBaking the substrate 1 at 1300 ℃ in a high-temperature environment, removing foreign matters on the surface of the substrate 1, and then respectively growing a buffer layer 2; an n-AlGaN layer 3; an intrinsic AlGaN layer 4; an n-AlGaN electron transport layer 5; 6 pairs of Al 0.45 Ga 0.55 N/Al 0.55 Ga 0.45 An N multi-quantum well layer 6; p-Al 0.6 Ga 0.4 An N electron blocking layer 7; p-Al 0.4 Ga 0.6 An N/p-GaN hole injection layer 8.
Second, p-Al obtained in the first step 0.4 Ga 0.6 On the N/p-GaN hole injection layer 8, a current extension layer 9 was formed by evaporation, which was made of Ni/Au and had a thickness of 20 nm.
Selectively etching the substrate obtained in the second step to the position of the buffer layer 2 through photoetching and deep etching processes to form a device array, and isolating single SBD and DUV LED devices; in the array, there is a 10 μm pitch between the DUV LED, SBD devices.
And fourthly, manufacturing a step on the substrate obtained in the third step through photoetching and dry etching processes, exposing the n-AlGaN electron transmission layer 5 on one side of the DUV LED, and exposing the intrinsic AlGaN layer 4 and the n-AlGaN layer 3 of the device by using the same method for the SBD device.
And fifthly, growing an insulating passivation layer and an insulating spacer layer on the basis of the fourth obtained substrate by a PECVD (plasma enhanced chemical vapor deposition) technology, wherein the thickness of the insulating passivation layer and the insulating spacer layer is 20-200 nm.
And sixthly, etching the insulating layer covered at the positions of the n-type ohmic electrode and the p-type ohmic electrode of the DUV LED and the n-type ohmic electrode and the Schottky contact electrode of the SBD by photoetching and wet etching on the basis of the fifth step, and preparing for manufacturing the electrodes in the next step.
And seventhly, manufacturing electrodes of the DUV LED and the SBD and an interconnected metal electrode for realizing the connection of the discrete devices at the electrode position etched in the sixth step by photoetching and electron beam evaporation technology.
Thus, the integrated optoelectronic chip with both SBD and DUV LED structures is prepared.
It can be seen from the above embodiments that the present invention can filter the negative half of the ac power by using SBD, and only the positive half is retained, i.e. the DUV LED will be turned on to emit light only when the voltage of the positive half is applied, and the DUV LED will not be turned on because the voltage of the negative half is filtered by SBD; compared with the method that the negative half part of the alternating current is directly changed into positive by some means, the DUV LED is always in a conducting and light-emitting state during the electrifying period, in the structure, the DUV LED is in a non-lighting state when the negative half part voltage is applied, namely, only half of the voltage can conduct the DUV LED, so that theoretically, the structure provided by the patent can reduce the heat generation by one time and prolong the service life of the device.
The above examples are only preferred embodiments of the present invention, it should be noted that: it will be apparent to those skilled in the art that various modifications and equivalents can be made without departing from the spirit of the invention, and it is intended that all such modifications and equivalents as fall within the scope of the invention as defined in the claims appended hereto.
The invention is not the best known technology.
Thus, the integrated optoelectronic chip with both SBD and DUV LED structures is prepared.
Fig. 15 shows a single DUV LED structure and reverse IV characteristics of both the DUV LED and SBD structures obtained through simulation calculation by APSYS software of Crosslight corporation, where fig. 15(a) is a reverse IV characteristic curve of the single DUV LED structure, the breakdown voltage of the single DUV LED structure is 14V, and fig. 15(b) is a reverse IV characteristic curve of both the SBD and DUV LED structures, and the breakdown voltage of both the DUV LED and SBD structures can be increased to about 1000V, so that the proposed device structure can effectively increase the reverse breakdown voltage of the device, thereby playing a role of a protection circuit.
Through the above embodiments, the light emitting diode device with the SBD structure proposed by us does not need an LED driver, and can be directly powered by mains voltage, so that not only the circuit is simple and clear, but also the cost can be reduced. The invention provides a photoelectronic chip integrated by a Schottky diode (SBD) and a deep ultraviolet light-emitting diode (DUV LED), which can be directly powered by a city road voltage, saves an LED driver, simplifies a circuit, and improves the light-emitting efficiency and the device reliability; in addition, by utilizing the unidirectional conduction characteristic of the SBD, the integrated optoelectronic chip can realize the filtering effect on the AC signal, namely, indirectly realize the driving mode under the pulse signal, thus reducing the heating of the LED, prolonging the service life of the device and being more beneficial to the popularization of the LED.
When the integrated optoelectronic chip is under forward bias (i.e. half cycle of AC signal), the SBD is in on state, and the DUV LED in series with the SBD is also in on state, then the integrated optoelectronic chip allows current transport and generates photons; from a theoretical point of view, when a reverse bias is applied (i.e., another half cycle of the AC signal), the SBD is in the off state, and the entire series circuit is open, no current passes through the DUV LED, and thus no photons are generated by the integrated optoelectronic chip. From a practical perspective, the SBD in the integrated optoelectronic chip is based on the AlGaN layer, and the layer has a large forbidden band width and a high critical electric field, so that the SBD can bear a high breakdown voltage, and meanwhile, the leakage current is small and is not enough to cause the DUV LED to break down, thereby playing a role in protecting the whole circuit.
The invention is not the best known technology.

Claims (2)

1. An integrated optoelectronic chip structure with both SBDs and DUV LEDs is characterized in that the structure comprises n SBDs arranged in a row and n columns of m rows of DUV LEDs below the SBDs; the SBD and DUV LEDs are arranged in an array; wherein n = 1-25, m = 4-50;
wherein, n SBDs are connected in series, and the ohmic contact electrode at the right end is connected with the strip chip electrode on the upper surface; the Schottky contact electrode at the left end is connected with the n-type ohmic electrode of the DUV LED right below the next row, and the p-type ohmic electrode of the DUV LED is connected with the n-type ohmic electrode of the adjacent DUV LED; the DUV LEDs in n rows and m rows are arranged in a snake shape and connected in series; the p-type ohmic electrode of the DUV LED at the tail end of the lowermost row is connected with the strip-shaped chip electrode at the lower part;
the SBD and the DUV LED share the same substrate and buffer layer;
in the DUV LED, an n-AlGaN layer, an intrinsic AlGaN layer and an n-AlGaN electron transmission layer are sequentially arranged on a buffer layer; the n-AlGaN electron transmission layer comprises an upper layer and a lower layer, wherein the upper layer is 80% of the projection area of the lower layer, and the thickness of the upper layer is 10% -25% of the thickness of the lower layer; the upper layer of the n-AlGaN electron transmission layer is sequentially covered with a multi-quantum well layer, a p-AlGaN electron barrier layer, a p-AlGaN/p-GaN hole injection layer and a current expansion layer; the current expansion layer is also partially covered with a p-type ohmic electrode, and the area of the p-type ohmic electrode is 5% -100% of that of the current expansion layer; the exposed part of the upper surface of the lower layer of the n-AlGaN electron transmission layer is also partially covered with an n-type ohmic electrode, and the area of the n-type ohmic electrode is 5% -95% of the area of the exposed part of the lower layer of the n-AlGaN electron transmission layer; the side part of the n-AlGaN layer, the side part of the intrinsic AlGaN layer, the side part of the n-AlGaN electron transport layer, the side part of the multiple quantum well layer, the side part of the p-AlGaN electron blocking layer, the side part of the p-AlGaN/p-GaN hole injection layer, the side part of the current expansion layer, the exposed part of the upper surface of the current expansion layer and the exposed part of the lower layer of the n-AlGaN electron transport layer are covered with insulating layers;
in the SBD, an n-AlGaN layer is arranged on a buffer layer, and 40-60% of the upper surface of the n-AlGaN layer is covered with an intrinsic AlGaN layer; 5% -100% of the exposed part of the n-AlGaN layer is covered with an ohmic electrode, and 5% -100% of the intrinsic AlGaN layer is covered with a Schottky contact electrode;
the electrodes are connected through metal, and the metal is Ni/Au, Cr/Au, Pt/Au or Ni/Al;
the substrate is sapphire, SiC, Si, AlN, GaN or quartz glass;
the buffer layer is made of AlGaN and has a thickness of 10 nm-50 nm;
the thickness of the n-AlGaN layer is 1-6 mu m;
the thickness of the intrinsic AlGaN layer is 1-5 mu m;
the thickness of the n-AlGaN electron transmission layer is 1-5 mu m;
the thickness of the multi-quantum well layer is 40 nm-300 nm;
the thickness of the p-AlGaN electron blocking layer is 10 nm-20 nm;
the thickness of the p-AlGaN/p-GaN hole injection layer is 50 nm-500 nm;
the current expansion layer is made of ITO, Ni/Au, zinc oxide, graphene, aluminum or metal nanowires, and the thickness of the current expansion layer is 3-300 nm;
the insulating layer is made of SiO 2 、Ta 2 O 5 Or HfO 2 The thickness is 20 nm-200 nm;
the p-type ohmic electrode is made of Ni/Au, Cr/Au, Pt/Au or Ni/Al; the n-type ohmic electrode is made of Al/Au, Cr/Au or Ti/Al/Ti/Au; the ohmic electrode is Al/Au, Cr/Au or Ti/Al/Ti/Au; the material of the Schottky contact electrode is Ni/Au.
2. A method for preparing an integrated optoelectronic chip structure with both SBD and DUV LEDs, characterized in that for preparing an integrated optoelectronic chip structure according to claim 1, it comprises the following steps:
firstly, baking a substrate at 950-1400 ℃ in an MOCVD reaction furnace, removing foreign matters on the surface of the substrate, and then respectively growing a buffer layer, an n-AlGaN layer, an intrinsic AlGaN layer, an n-AlGaN electron transmission layer, an AlGaN/AlGaN multi-quantum well layer, a p-AlGaN electron barrier layer and a p-AlGaN/p-GaN hole injection layer;
secondly, evaporating and plating a current expansion layer on the product grown in the first step;
thirdly, exposing the product obtained in the second step to a buffer layer through photoetching and deep etching to realize mutual isolation among the discrete devices;
fourthly, exposing the n-AlGaN electron transmission layer on the current expansion layer obtained in the second step for the DUV LED through photoetching and etching processes; for SBD, exposing the intrinsic AlGaN layer and the n-AlGaN layer through the same photoetching and etching processes;
fifthly, on the basis of the fourth step, growing an insulating passivation layer and an insulating spacer layer by utilizing a PECVD (plasma enhanced chemical vapor deposition) technology to form an insulating layer, wherein the thickness of the insulating layer is 20-200 nm;
sixthly, removing the insulating layer covering the p-type ohmic electrode position, the insulating layer covering the n-type ohmic electrode position, the insulating layer covering the ohmic electrode position of the DUV LED and the insulating layer covering the surface of the Schottky contact electrode position and the insulating layer covering the p-type ohmic electrode position of the DUV LED by photoetching and wet etching technologies on the basis of the fifth step;
seventhly, manufacturing a p-type ohmic electrode and an n-type ohmic electrode of the DUV LED, and an ohmic electrode and a Schottky contact electrode of the SBD by utilizing photoetching and electron beam evaporation technology; while achieving interconnected metal electrodes between discrete devices.
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